CN202688414U - Vapor plating mask plate - Google Patents
Vapor plating mask plate Download PDFInfo
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- CN202688414U CN202688414U CN 201220015901 CN201220015901U CN202688414U CN 202688414 U CN202688414 U CN 202688414U CN 201220015901 CN201220015901 CN 201220015901 CN 201220015901 U CN201220015901 U CN 201220015901U CN 202688414 U CN202688414 U CN 202688414U
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- mask plate
- evaporation
- opening
- ito surface
- face
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Abstract
The utility model relates to a vapor plating mask plate, which mainly solves the technical problem that in current OLED manufacturing technology, organic particles can not reach a substrate during vapor plating due to the shielding of a mask plate opening wall; the utility model adopts the technical scheme that the vapor plating mask plate is a quadrilateral metal plate and comprises an ITO surface contacting an indium tin oxide (ITO) substrate and an vapor plating surface; the mask plate is provided with a through hole communicating the ITO surface with the vapor plating surface; the opening size of the through hole on the ITO surface is less than the opening size on the vapor plating surface; therefore the problem is well solved; and the vapor plating mask plate is applicable to industrial production of organic light emitting diodes.
Description
Technical field
The utility model relates to evaporation mask plate required in the OLED manufacturing processed.
Background technology
Usually, the OLED device is a kind of emissive display, and it is luminous by electric fluorescence excitation organic compound.According to the type of drive of the N that can be arranged as matrix * M pixel, the OLED device can be regarded passive matrix OLED (PMOLED) device or active matrix OLED(AMOLED as) device.The AMOLED device is compared with the PMOLED device, because its reduce power consumption and high resolving power are suitable for large-sized monitor.
According to the direction that light sends from organic compound, the OLED device can be top emission OLED device, end emission OLED device or T﹠B emission OLED device.Top emission OLED device from the reverse direction of the substrate that is provided with pixel on luminous and different with end emission OLED, it has high aperture (Aperture ratio).
This device increases for not only comprising for the top emission type of main display window but also the demand that comprises for the end emitting OLED device of less important window, because can be miniaturized and it consumes seldom power.Such OLED device can be mainly used in comprising that external secondary display window and internal main want the mobile telephone of display window.The power of less important display window consumption is less than main display window, and the state that it can keep out when mobile telephone is in the call waiting state, thereby allows at any time to observe accepting state, battery allowance, time etc.
Organic electroluminescent LED (Organic Light-Emitting Diode, OLED) be under certain electric field driven, electronics and hole are injected into cathodic modification layer and hole injection layer from negative electrode and anode respectively, and meet in luminescent layer, and the exciton of formation finally causes the emission of visible light.For organic electroluminescence device, we can be divided into two kinds by luminescent material: small molecules OLED and polymer OLED.
Above-mentioned Organnic electroluminescent device comprises the first electrode, organic luminous layer and the second electrode.When making organic light-emitting device, by photolithography, by etching reagent composition on ITO.When photolithography was used for preparing the second electrode again, moisture infiltrated between organic luminous layer and the second electrode, can shorten significantly the life-span of organic light-emitting device, reduced its performance.In order to overcome above problem, adopt evaporation process that luminous organic material is deposited on the substrate, form organic luminous layer, the method needs supporting high precision evaporation with mask plate (being also referred to as shadow mask).The making of the second electrode is with the making method of luminescent layer.
In evaporate process, prolongation along with the time, temperature is also in continuous rising, high temperature can reach 60 ℃, because the shadow mask opening size is weighed with micron order, and need the very thin thickness of the organic materials of evaporation to the ito glass, weigh with nano level unit, so need be strict with opening dimensional precision, opening pattern and thickness of slab.Because the evaporation that traditional technology is used is generally individual layer with the opening of shadow mask, the opening on the shadow mask so can cause blocking of organic materials particle, affects the homogeneity of evaporation layer also without the tool zero draft, and the reduction evaporating quality has increased manufacturing cost.
Traditional technology adopts the OLED mask plate of individual layer opening; and opening zero draft; as shown in Figure 1; the organic materials particle passes mask plate and is attached on the substrate from all angles; opening 1 zero draft; when particle tilts to inject angle when being less than or equal to θ, this part particle can be run into perforated wall and crested can't arrive substrate.This phenomenon can produce following problem: make the particle that tilts to inject excalation occur, cause briliancy to descend, and can not form thickness and the shape of hope on substrate.
General evaporation uses the thickness of shadow mask about 100 μ m, and the organic materials thickness of evaporation is only about 100nm, opening size minimum on the shadow mask can be 10 μ m, blocks so the sidewall of zero draft opening will certainly produce in evaporate process, but then, if only the thickness of attenuate shadow mask reduces the coverage extent of organic materials, can affect again the work-ing life of shadow mask, because shadow mask is excessively thin, yielding, the use of the shadow mask of impact reduces evaporating quality.
Traditional evaporation has three kinds with the opening kind of mask plate: point-like shadow mask board (Invar-Shadow Mask), grid type/slotted mask plate (Aperture Grille Mask/Slit Mask), slit shadow mask board (Slot Mask).All has the open defect such as Fig. 1 opening 11 described single face zero drafts.
The utility model provides evaporation mask plate required in a kind of OLED manufacturing processed, this kind mask plate has the design of tapering opening, be the ito surface opening size less than evaporation face opening size, solved organic granular because covering of perforated wall and can't reach the problem of substrate.
The utility model content
Technical problem to be solved in the utility model is in the existing OLED manufacturing technology, organic granular can't reach the technical problem of substrate during evaporation owing to covering of perforated wall, a kind of new evaporation mask plate is provided, uses that this mask plate has that the rate of utilization of organic materials is high, yield polymer films is high, mask plate long service life, the advantage of saving cost.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is as follows: a kind of evaporation mask plate, be shaped as the tetragon metal sheet, comprise ito surface and two faces of evaporation face with the indium tin oxide substrate contacts, has the through hole that connects ito surface and evaporation face on the described mask plate, less than the opening size on the evaporation face, the via openings of ito surface and evaporation face all has reversed cone angle to through hole at the opening size on the ito surface.
In the technique scheme, the via openings on described ito surface and the evaporation face couples together opening by several real bridges, and through hole is the rule mesh trellis at mask plate and distributes; Described mask plate is rectangle, and thickness is 5～200 μ m.The angle of the via openings reversed cone angle of ito surface is less than the angle of the via openings reversed cone angle of evaporation face.The mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy.Mask plate thickness is 10～50 μ m; It is vertically cut open on the thickness direction of mask plate, and its sectional view is calabash shaped.The direction on the long size of the opening on ito surface and evaporation face limit is that vertically the direction of opening undersized edge is horizontal; Ito surface opening lateral dimension is less than the lateral dimension of evaporation surface grids opening.Ito surface via openings dimensional precision transversely is at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.The latticed opening sidewalls of evaporation face large size is smooth cone wall, and tapering is at 30～50 °.The vertical depth of the reversed cone angle opening of ito surface is less than or equal to the vertical depth of evaporation face cone angle opening; When described mask plate used, ito surface and evaporation substrate ito glass closely were adjacent to, and organic materials passes through ito surface via openings evaporation to ito glass substrate.
The utility model is as follows by the beneficial effect of this utility model: this kind shadow mask has tapering opening design, and namely the ito surface opening size is less than evaporation face opening size, has solved organic granular because covering of perforated wall and can't reach the problem of substrate; When guaranteeing ito surface aperture position precision, improved the yield polymer films of organic materials; Improve the rate of utilization of organic materials, saved cost.Improved the uniformity coefficient of evaporated film; The design of opening Pear-Shaped has guaranteed that mask plate and ito glass substrate be close to the opening size precision of face (being ito surface) and be controlled in the claimed range; Mask plate has the certain thickness evaporation face of large opening design, guarantees in the situation that does not affect evaporation, and mask plate has been carried out thickening firm effect; Enlarge the thickness range of shadow mask, avoided because the excessively thin punching shear that causes of shadow mask, improved shadow mask work-ing life, obtained preferably technique effect.
Description of drawings
Fig. 1 is mask plate structure synoptic diagram in the prior art.
Fig. 2 is mask plate structure synoptic diagram among the utility model embodiment 1.
Fig. 3 is that mask plate and ito glass substrate cooperate synoptic diagram.
Fig. 4 is mask plate evaporation face vertical view.
Among Fig. 1,1 is mask plate zero draft opening, and 2 is ito glass, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 2,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is the single layer mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 3,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is mask plate, and 4 is ito surface, and 5 is the evaporation face.
Among Fig. 4,1 is the ito surface small orifices, and 2 is evaporation face large size opening, and 3 is mask plate, and 4 is ito surface, and 5 is the evaporation face.
Below by embodiment the utility model is further elaborated.
Embodiment
[embodiment 1]
A kind of evaporation mask plate, as shown in Figure 2, thick is 50 μ m, be shaped as tetragon Invar alloy plate, comprise ito surface 4 and evaporation face 5 with the indium tin oxide substrate contacts, have the through hole that connects ito surface and evaporation face on the described mask plate, through hole is in the size of the opening 1 on the ito surface size less than the opening 2 on the evaporation face.Choosing Invar alloy is the mask plate material, adopts two-sided etch process, and Fig. 3 is that mask plate and ito glass substrate cooperate synoptic diagram.
Form ito surface opening 1 such as mask plate Fig. 2 from ito surface 4 etchings of mask plate, opening 1 degree of depth is 15 μ m, lateral dimension is 70 μ m, form such as the opening 2 on the evaporation face Fig. 2 from evaporation face 5 etchings of mask plate, and the opening 2 on the assurance evaporation face and ito surface opening 1 center superposition of template, and 2 centrosymmetry of the opening on the evaporation face, the degree of depth is 35 μ m, lateral dimension is 140 μ m, and the opening hole wall of the opening on the evaporation face 2 has certain concave arc degree, has formed such as 50 ° of the deposition angles among Fig. 3.By the separately control to ito surface and evaporation facet etch time, obtain on needed ito surface opening 1 and the evaporation face opening 2 the opening degree of depth.As shown in Figure 4, real bridge 3 links together opening; The opening sectional view that makes by above-mentioned etch process as shown in Figure 3, the wide evaporation face large size opening 2 of the dark 140 μ m of the ito surface small orifices 1 that the dark 70 μ m of 15 μ m are wide and 35 μ m connects and forms the calabash shaped groove opening, opening has 50 ° evaporation cone angle, and the dimension control of opening 1 is at ± 5 μ m; Above-mentioned two-sided etching also can be adopted at twice etching of single face.
[embodiment 2]
A kind of evaporation mask plate, thick is 100 μ m, be shaped as tetragon nickel cobalt (alloy) plate, comprise ito surface and two faces of evaporation face with the indium tin oxide substrate contacts, have the through hole that connects ito surface and evaporation face on the described mask plate, through hole is in the size of the opening on the ito surface size less than the opening on the evaporation face.
Described evaporation mask plate is tetragon nickel cobalt (alloy) plate, the ito surface opening degree of depth of mask plate is 25 μ m, lateral dimension is 50 μ m, opening on the evaporation face overlaps with the ito surface open centre of template, and the open centre on the evaporation face is symmetrical, and the degree of depth is 75 μ m, and lateral dimension is 100 μ m, and the opening hole wall on the evaporation face has certain concave arc degree, has formed 30 ° of deposition angles.Separately control by to ito surface and evaporation facet etch time obtains the opening degree of depth on needed ito surface opening and the evaporation face.Real bridge links together opening; The opening that makes by etch process, the wide evaporation face large size opening of the dark 100 μ m of the ito surface small orifices that the dark 50 μ m of 25 μ m are wide and 75 μ m connects and forms the calabash shaped groove opening, opening has 30 ° evaporation cone angle, and the dimension control of ito surface opening is at ± 5 μ m; Above-mentioned two-sided etching also can be adopted at twice etching of single face.
Claims (9)
1. evaporation mask plate, be shaped as the tetragon metal sheet, it is characterized in that, comprise ito surface and two faces of evaporation face with the indium tin oxide substrate contacts, has the through hole that connects ito surface and evaporation face on the described mask plate, less than the opening size on the evaporation face, the via openings of ito surface and evaporation face all has reversed cone angle to through hole at the opening size on the ito surface.
2. evaporation mask plate according to claim 1 is characterized in that the via openings on described ito surface and the evaporation face passes through several real bridges, and opening is coupled together, and through hole is the rule mesh trellis at mask plate and distributes; Described mask plate is rectangle, and thickness is 5～200 μ m.
3. evaporation mask plate according to claim 1 is characterized in that the angle of via openings reversed cone angle of ito surface is less than the angle of the via openings reversed cone angle of evaporation face.
4. evaporation mask plate according to claim 1 is characterized in that the mask plate material is any one metal sheet in stainless steel, pure nickel, nickel cobalt (alloy), Rhometal, the Invar alloy.
5. evaporation mask plate according to claim 1 is characterized in that mask plate thickness is 10～50 μ m.
6. evaporation mask plate according to claim 3 is characterized in that the direction on the long size of the opening limit on ito surface and the evaporation face for vertical, and the direction of opening undersized edge is horizontal; Ito surface opening lateral dimension is less than the lateral dimension of evaporation surface grids opening.
7. evaporation mask plate according to claim 6 is characterized in that ito surface via openings dimensional precision transversely is at ± 5 μ m; The vertical depth of the reversed cone angle opening of ito surface is at 5～25 μ m.
8. evaporation mask plate according to claim 1 is characterized in that the latticed opening sidewalls of evaporation face large size is smooth cone wall, and tapering is at 30～50 °.
9. evaporation mask plate according to claim 3 is characterized in that the vertical depth of reversed cone angle opening of ito surface is less than or equal to the vertical depth of evaporation face cone angle opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220015901 CN202688414U (en) | 2012-01-16 | 2012-01-16 | Vapor plating mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220015901 CN202688414U (en) | 2012-01-16 | 2012-01-16 | Vapor plating mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202688414U true CN202688414U (en) | 2013-01-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220015901 Expired - Fee Related CN202688414U (en) | 2012-01-16 | 2012-01-16 | Vapor plating mask plate |
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| CN (1) | CN202688414U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205704A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Vapor deposition mask |
-
2012
- 2012-01-16 CN CN 201220015901 patent/CN202688414U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205704A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Vapor deposition mask |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20190808 Granted publication date: 20130123 |
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| PD01 | Discharge of preservation of patent | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20220116 Granted publication date: 20130123 |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130123 Termination date: 20200116 |