CN103199006A - Washing method for TFT substrate - Google Patents
Washing method for TFT substrate Download PDFInfo
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- CN103199006A CN103199006A CN2013101176124A CN201310117612A CN103199006A CN 103199006 A CN103199006 A CN 103199006A CN 2013101176124 A CN2013101176124 A CN 2013101176124A CN 201310117612 A CN201310117612 A CN 201310117612A CN 103199006 A CN103199006 A CN 103199006A
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- tft substrate
- vinegar
- pure water
- acetum
- substrate surface
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Abstract
The invention provides a washing method for a TFT substrate. The washing method comprises the following steps: vinegar or acetum is evenly spayed on the surface of the TFT substrate which is polished by polishing paste, wherein the polishing paste contains cerium oxide; the vinegar or the acetum on the surface of the TFT substrate is wiped away; and pure water is used to wash the surface of the TFT substrate, the surface of the TFT substrate is dried naturally and the washed TFT substrate is obtained. According to the washing method for the TFT substrate, acetic acid in the vinegar or the acetum reacts with the cerium oxide chemically, so that the cerium oxide is changed into cerium ions and dissolved in the vinegar or the acetum, and residual polishing paste stains on the surface of the TFT substrate are removed. Washing effects are good. Second polishing by the polishing paste is not needed, so that power consumption is reduced and efficiency of the TFT substrate is increased.
Description
Technical field
The present invention relates to TFT substrate field, particularly relate to a kind of cleaning method of TFT substrate.
Background technology
Traditional TFT(Thin Film Transistor (TFT)) cleaning method of substrate is: the TFT substrate after polishing slurries is ground is placed in the platform of developing a film, with pure water spray TFT substrate surface, the back sponge wiping TFT substrate surface of wringing out, afterwards the TFT substrate is placed 2～3 immersions that fluctuate of pure water groove, take out the back and dry the TFT substrate after obtaining cleaning naturally.
But there is certain defective in the cleaning method of above-mentioned TFT substrate, can present the stain (can't wiping remove) of polishing slurries as the TFT substrate surface after cleaning, and causes that the TFT substrate surface is residual a stain, can influence the effect of follow-up TFT substrate film coating; In addition, above-mentioned stain can only be removed by second polishing slurry abrasive method, and has increased the fragmentation risk of TFT substrate, has reduced efficient.
Summary of the invention
Based on this, be necessary to provide the cleaning method that a kind of cleaning performance is preferable, improve the TFT substrate of productive rate.
A kind of cleaning method of TFT substrate may further comprise the steps:
Vinegar or acetum evenly are sprayed at the surface of the TFT substrate after polishing slurries grinds, wherein, contain cerium oxide in the described polishing slurries;
Described vinegar or the described acetum wiping of described TFT substrate surface are removed; And
Clean described TFT substrate surface with pure water, dry naturally, the TFT substrate after obtaining cleaning.
Among embodiment, described vinegar is light-coloured vinegar therein.
Among embodiment, the step of cleaning described TFT substrate surface with pure water comprises therein:
With the described TFT substrate surface of pure water hydro-peening;
The described pure water wiping of described TFT substrate surface is removed;
Place pure water to soak described TFT substrate.
Among embodiment, the step that places pure water to soak described TFT substrate comprises therein:
Described TFT substrate is vertically placed pure water 2～3 immersions that fluctuate, and soak time is 5～10s.
Among embodiment, remove the described vinegar of described TFT substrate surface, described acetum or described pure water with the sponge block wiping therein.
The cleaning method of above-mentioned TFT substrate, the acetic acid in vinegar or the acetum and cerium oxide generation chemical reaction make cerium oxide become cerium ion and are dissolved in vinegar or the acetum, remove the polishing slurries stain of TFT substrate surface remnants, and cleaning performance is preferable; And need not carry out the second polishing slurry and grind, reduce energy consumption, improve the efficient of TFT substrate.
Description of drawings
Fig. 1 is the flow chart of cleaning method of the TFT substrate of an execution mode.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar improvement under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
See also Fig. 1, the cleaning method of the TFT substrate of an execution mode may further comprise the steps:
Step S100, vinegar or acetum evenly are sprayed at the surface of the TFT substrate after polishing slurries grinds, wherein, contain cerium oxide in the polishing slurries.
Wherein, vinegar or acetum are light-coloured vinegar, rice vinegar or other vinegars commonly used.In the present embodiment, vinegar is light-coloured vinegar.Contain acetic acid in vinegar or the acetum, acetic acid can with cerium oxide generation chemical reaction, make cerium oxide become cerium ion and be dissolved in vinegar or the acetum, remove the polishing slurries stain of TFT substrate surface remnants.
Step S200, vinegar or the acetum wiping of TFT substrate surface are removed.
After vinegar or acetum evenly are sprayed at TFT substrate surface after polishing slurries grinds, can with the sponge block of wringing out water vinegar or acetum wiping be removed immediately.
Step S300, clean the TFT substrate surface with pure water, dry the TFT substrate after obtaining cleaning naturally.
The step of cleaning the TFT substrate surface with pure water specifically comprises:
1, with pure water hydro-peening TFT substrate surface.
With pure water hydro-peening TFT substrate surface, can remove remaining vinegar or acetum, tentatively clean the TFT substrate.
2, the pure water wiping of TFT substrate surface is removed.
With the sponge block of wringing out water the pure water wiping of TFT substrate surface is removed.
3, place pure water to soak the TFT substrate.
The TFT substrate is vertically placed pure water 2～3 immersions that fluctuate, and soak time is 5～10s.Place pure water to soak the TFT substrate, can thoroughly clean the TFT substrate, for follow-up plated film is got ready.
The cleaning method of above-mentioned TFT substrate, the acetic acid in vinegar or the acetum and cerium oxide generation chemical reaction make cerium oxide become cerium ion and are dissolved in vinegar or the acetum, remove the polishing slurries stain of TFT substrate surface remnants, and cleaning performance is preferable; And need not carry out the second polishing slurry and grind, reduce energy consumption, improve the efficient of TFT substrate.
Below in conjunction with specific embodiment, the cleaning method of TFT substrate is further elaborated.
Embodiment 1
Cerium oxide wherein, is contained in the surface of the TFT substrate after light-coloured vinegar evenly is sprayed at polishing slurries and grinds in the polishing slurries.
With the sponge block of wringing out water the light-coloured vinegar wiping of TFT substrate surface is removed.
With pure water hydro-peening TFT substrate surface.
With the sponge block of wringing out water the pure water wiping of TFT substrate surface is removed.
Vertically place pure water to fluctuate the TFT substrate and soak for 2 times, soak time is 5s, dries naturally, the TFT substrate after obtaining cleaning.
Under light, detect by an unaided eye, the TFT substrate surface noresidue stain after the cleaning that is obtained by said method, smooth surface illustrates that the cleaning method cleaning performance of this TFT substrate is preferable.
Embodiment 2
Cerium oxide wherein, is contained in the surface of the TFT substrate after light-coloured vinegar evenly is sprayed at polishing slurries and grinds in the polishing slurries.
With the sponge block of wringing out water the light-coloured vinegar wiping of TFT substrate surface is removed.
With pure water hydro-peening TFT substrate surface.
With the sponge block of wringing out water the pure water wiping of TFT substrate surface is removed.
Vertically place pure water to fluctuate the TFT substrate and soak for 3 times, soak time is 10s, and the back is dried the TFT substrate after obtaining cleaning naturally.
Under light, detect by an unaided eye, the TFT substrate surface noresidue stain after the cleaning that is obtained by said method, smooth surface illustrates that the cleaning method cleaning performance of this TFT substrate is preferable.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (5)
1. the cleaning method of a TFT substrate is characterized in that, may further comprise the steps:
Vinegar or acetum evenly are sprayed at the surface of the TFT substrate after polishing slurries grinds, wherein, contain cerium oxide in the described polishing slurries;
Described vinegar or the described acetum wiping of described TFT substrate surface are removed; And
Clean described TFT substrate surface with pure water, dry naturally, the TFT substrate after obtaining cleaning.
2. the cleaning method of TFT substrate according to claim 1 is characterized in that, described vinegar is light-coloured vinegar.
3. the cleaning method of TFT substrate according to claim 1 is characterized in that, the step of cleaning described TFT substrate surface with pure water comprises:
With the described TFT substrate surface of pure water hydro-peening;
The described pure water wiping of described TFT substrate surface is removed;
Place pure water to soak described TFT substrate.
4. the cleaning method of TFT substrate according to claim 3 is characterized in that, the step that places pure water to soak described TFT substrate comprises:
Described TFT substrate is vertically placed pure water 2～3 immersions that fluctuate, and soak time is 5～10s.
5. the cleaning method of TFT substrate according to claim 3 is characterized in that, removes the described vinegar of described TFT substrate surface, described acetum or described pure water with the sponge block wiping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101176124A CN103199006A (en) | 2013-04-07 | 2013-04-07 | Washing method for TFT substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101176124A CN103199006A (en) | 2013-04-07 | 2013-04-07 | Washing method for TFT substrate |
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| CN103199006A true CN103199006A (en) | 2013-07-10 |
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| CN2013101176124A Pending CN103199006A (en) | 2013-04-07 | 2013-04-07 | Washing method for TFT substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103920687A (en) * | 2014-04-15 | 2014-07-16 | 苏州凯利昂光电科技有限公司 | Method for cleaning TFT glass processed through thinning grinding |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000140778A (en) * | 1998-11-10 | 2000-05-23 | Hitachi Plant Eng & Constr Co Ltd | Washing solution and washing of glass substrate |
| JP2001098298A (en) * | 1999-09-27 | 2001-04-10 | Hitachi Plant Eng & Constr Co Ltd | Cleaning liquid for aluminosilicate glass base or ceramic glass base and method for cleaning thereof |
| CN1847382A (en) * | 2005-04-13 | 2006-10-18 | 美格纳半导体有限会社 | Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same |
| CN1918698A (en) * | 2004-02-09 | 2007-02-21 | 三菱化学株式会社 | Cleaning liquid for substrate for semiconductor device and cleaning method |
-
2013
- 2013-04-07 CN CN2013101176124A patent/CN103199006A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000140778A (en) * | 1998-11-10 | 2000-05-23 | Hitachi Plant Eng & Constr Co Ltd | Washing solution and washing of glass substrate |
| JP2001098298A (en) * | 1999-09-27 | 2001-04-10 | Hitachi Plant Eng & Constr Co Ltd | Cleaning liquid for aluminosilicate glass base or ceramic glass base and method for cleaning thereof |
| CN1918698A (en) * | 2004-02-09 | 2007-02-21 | 三菱化学株式会社 | Cleaning liquid for substrate for semiconductor device and cleaning method |
| CN1847382A (en) * | 2005-04-13 | 2006-10-18 | 美格纳半导体有限会社 | Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103920687A (en) * | 2014-04-15 | 2014-07-16 | 苏州凯利昂光电科技有限公司 | Method for cleaning TFT glass processed through thinning grinding |
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Address after: 338004 Xinyu City, Jiangxi Province High - tech Industrial Development Zone Xicheng Avenue Vogg Industrial Park Applicant after: WG TECH (JIANGXI) CO., LTD. Address before: 338004 Xinyu City, Jiangxi Province High - tech Industrial Development Zone Xicheng Avenue Vogg Industrial Park Applicant before: Jiangxi Woge Optoelectronic Technology Co., Ltd. |
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Application publication date: 20130710 |