CN103187947B - 可切换滤波器和设计结构 - Google Patents
可切换滤波器和设计结构 Download PDFInfo
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- CN103187947B CN103187947B CN201310001517.8A CN201310001517A CN103187947B CN 103187947 B CN103187947 B CN 103187947B CN 201310001517 A CN201310001517 A CN 201310001517A CN 103187947 B CN103187947 B CN 103187947B
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- China
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- electrode
- wave filter
- filter
- micro electromechanical
- piezoelectric substrate
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/008—MEMS characterised by an electronic circuit specially adapted for controlling or driving the same
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/48—Coupling means therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezo-electric or electrostrictive material including passive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
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- H03H9/64—Filters using surface acoustic waves
- H03H9/6403—Programmable filters
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- H—ELECTRICITY
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- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/40—Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Connection electrodes of multilayer piezoelectric or electrostrictive devices, e.g. external electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/342,375 US9048809B2 (en) | 2012-01-03 | 2012-01-03 | Method of manufacturing switchable filters |
US13/342,375 | 2012-01-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103187947A CN103187947A (zh) | 2013-07-03 |
CN103187947B true CN103187947B (zh) | 2016-08-24 |
Family
ID=47682502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310001517.8A Active CN103187947B (zh) | 2012-01-03 | 2013-01-04 | 可切换滤波器和设计结构 |
Country Status (4)
Country | Link |
---|---|
US (3) | US9048809B2 (zh) |
CN (1) | CN103187947B (zh) |
DE (1) | DE102012223979B4 (zh) |
GB (1) | GB2498261B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2285734A2 (en) * | 2008-05-12 | 2011-02-23 | Nxp B.V. | Mems devices and fabrication thereof |
US9120667B2 (en) * | 2011-06-20 | 2015-09-01 | International Business Machines Corporation | Micro-electro-mechanical system (MEMS) and related actuator bumps, methods of manufacture and design structures |
US9054671B2 (en) * | 2011-11-09 | 2015-06-09 | International Business Machines Corporation | Tunable filter structures and design structures |
US9048809B2 (en) * | 2012-01-03 | 2015-06-02 | International Business Machines Corporation | Method of manufacturing switchable filters |
US9225311B2 (en) * | 2012-02-21 | 2015-12-29 | International Business Machines Corporation | Method of manufacturing switchable filters |
US9325294B2 (en) | 2013-03-15 | 2016-04-26 | Resonant Inc. | Microwave acoustic wave filters |
CN104021995B (zh) * | 2014-06-13 | 2016-04-13 | 太原理工大学 | 基于静电斥力的电容式射频mems开关 |
US9630834B2 (en) * | 2014-06-16 | 2017-04-25 | InSense, Inc. | Wafer scale monolithic CMOS-integration of free- and non-free-standing Metal- and Metal alloy-based MEMS structures in a sealed cavity |
US9574959B2 (en) * | 2014-09-02 | 2017-02-21 | Apple Inc. | Various stress free sensor packages using wafer level supporting die and air gap technique |
FR3026582A1 (fr) * | 2014-09-29 | 2016-04-01 | Commissariat Energie Atomique | Circuit resonant a frequence et a impedance variables |
DE102016107658A1 (de) * | 2016-04-25 | 2017-10-26 | Infineon Technologies Ag | Abstimmbares resonatorelement, filterschaltkreis und verfahren |
EP3549131A1 (en) | 2016-12-01 | 2019-10-09 | Avery Dennison Retail Information Services, LLC | Functional substrates for printed electronic devices |
EP3422417B1 (en) * | 2017-06-30 | 2021-08-04 | Murata Manufacturing Co., Ltd. | Distributed lc filter structure |
CN108134164A (zh) * | 2017-11-24 | 2018-06-08 | 北京遥感设备研究所 | 一种硅基微小型mems滤波器 |
DE102017130926A1 (de) * | 2017-12-21 | 2019-06-27 | RF360 Europe GmbH | Waferanordnung, Verfahren zur Fertigung von derselben und Hybridfilter |
CN108649301A (zh) * | 2018-04-13 | 2018-10-12 | 江苏硅华电子科技有限公司 | 一种宽带mems交指型滤波器及其制备方法 |
CN108550965A (zh) * | 2018-05-29 | 2018-09-18 | 江苏硅华电子科技有限公司 | 一种可变mems微波滤波器及其制备方法 |
TWI704101B (zh) * | 2019-03-29 | 2020-09-11 | 財團法人工業技術研究院 | 一種可調整感應電容值的微機電感測裝置 |
CN110266285B (zh) * | 2019-05-31 | 2021-04-02 | 武汉大学 | 一种微机械谐振器、其制备及频率微调校正方法 |
US11211913B2 (en) * | 2019-07-19 | 2021-12-28 | The George Washington University | Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate |
WO2021231132A1 (en) * | 2020-05-13 | 2021-11-18 | Avx Corporation | Filter with cover layer and shield layer |
DE102020211741A1 (de) * | 2020-09-21 | 2022-03-24 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanischer Sensor |
CN114553182A (zh) * | 2020-11-24 | 2022-05-27 | 联华电子股份有限公司 | 表面音波组件结构及其制造方法 |
CN115470735B (zh) * | 2022-09-09 | 2023-07-04 | 深圳飞骧科技股份有限公司 | Saw物理仿真的方法、系统和相关设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6860939B2 (en) * | 2002-04-23 | 2005-03-01 | Sharp Laboratories Of America, Inc. | Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making |
US7427797B2 (en) * | 2004-11-11 | 2008-09-23 | Kabushiki Kaisha Toshiba | Semiconductor device having actuator |
CN101997511A (zh) * | 2009-08-19 | 2011-03-30 | 日本电波工业株式会社 | 压电部件及其制造方法 |
CN102198924A (zh) * | 2006-11-08 | 2011-09-28 | 精工爱普生株式会社 | 电子装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI108583B (fi) * | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
US6291924B1 (en) * | 1999-07-01 | 2001-09-18 | Trw Inc. | Adjustable saw device |
TW497331B (en) | 2001-01-12 | 2002-08-01 | Asia Pacific Microsystems Inc | Micro bulk acoustic wave filter multiplexer |
US6690251B2 (en) | 2001-04-11 | 2004-02-10 | Kyocera Wireless Corporation | Tunable ferro-electric filter |
US6529093B2 (en) | 2001-07-06 | 2003-03-04 | Intel Corporation | Microelectromechanical (MEMS) switch using stepped actuation electrodes |
US6933808B2 (en) | 2002-07-17 | 2005-08-23 | Qing Ma | Microelectromechanical apparatus and methods for surface acoustic wave switching |
US7098575B2 (en) | 2003-04-21 | 2006-08-29 | Hrl Laboratories, Llc | BAW device and method for switching a BAW device |
FR2864951B1 (fr) * | 2004-01-14 | 2006-03-31 | Suisse Electronique Microtech | Dispositif de type microsysteme electromecanique a film mince piezoelectrique |
US7514759B1 (en) | 2004-04-19 | 2009-04-07 | Hrl Laboratories, Llc | Piezoelectric MEMS integration with GaN technology |
KR100731351B1 (ko) * | 2006-02-01 | 2007-06-21 | 삼성전자주식회사 | 탄성 표면파 디바이스 웨이퍼 레벨 패키지 및 그 패키징방법 |
US7939994B2 (en) | 2006-05-17 | 2011-05-10 | Microgan Gmbh | Micromechanical actuators comprising semiconductors on a group III nitride basis |
JP2008238330A (ja) * | 2007-03-27 | 2008-10-09 | Toshiba Corp | Mems装置およびこのmems装置を有する携帯通信端末 |
US7786653B2 (en) * | 2007-07-03 | 2010-08-31 | Northrop Grumman Systems Corporation | MEMS piezoelectric switch |
KR101378510B1 (ko) | 2007-11-01 | 2014-03-28 | 삼성전자주식회사 | Fbar를 이용한 튜너블 공진기 |
US7830227B1 (en) * | 2008-09-18 | 2010-11-09 | Hrl Laboratories, Llc | Device having integrated MEMS switches and filters |
JP5179530B2 (ja) * | 2009-03-03 | 2013-04-10 | 日本電波工業株式会社 | 弾性波デバイス及び電子部品 |
US20110012696A1 (en) | 2009-07-20 | 2011-01-20 | Sony Ericsson Mobile Communications Ab | Switched acoustic wave resonator for tunable filters |
US8739096B2 (en) * | 2011-12-15 | 2014-05-27 | International Business Machines Corporation | Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming thereof and design structures |
US9048809B2 (en) * | 2012-01-03 | 2015-06-02 | International Business Machines Corporation | Method of manufacturing switchable filters |
US9225311B2 (en) * | 2012-02-21 | 2015-12-29 | International Business Machines Corporation | Method of manufacturing switchable filters |
-
2012
- 2012-01-03 US US13/342,375 patent/US9048809B2/en active Active
- 2012-12-20 DE DE102012223979.0A patent/DE102012223979B4/de active Active
- 2012-12-21 GB GB1223287.2A patent/GB2498261B/en active Active
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-
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- 2014-10-24 US US14/522,676 patent/US9252733B2/en active Active
-
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- 2015-11-13 US US14/940,815 patent/US9935600B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6860939B2 (en) * | 2002-04-23 | 2005-03-01 | Sharp Laboratories Of America, Inc. | Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making |
US7427797B2 (en) * | 2004-11-11 | 2008-09-23 | Kabushiki Kaisha Toshiba | Semiconductor device having actuator |
CN102198924A (zh) * | 2006-11-08 | 2011-09-28 | 精工爱普生株式会社 | 电子装置 |
CN101997511A (zh) * | 2009-08-19 | 2011-03-30 | 日本电波工业株式会社 | 压电部件及其制造方法 |
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DE102012223979B4 (de) | 2016-03-31 |
DE102012223979A1 (de) | 2013-07-04 |
US20150042418A1 (en) | 2015-02-12 |
GB2498261A (en) | 2013-07-10 |
US9048809B2 (en) | 2015-06-02 |
GB201223287D0 (en) | 2013-02-06 |
GB2498261B (en) | 2013-12-11 |
US20160072469A1 (en) | 2016-03-10 |
US9252733B2 (en) | 2016-02-02 |
US9935600B2 (en) | 2018-04-03 |
US20130169383A1 (en) | 2013-07-04 |
CN103187947A (zh) | 2013-07-03 |
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