CN103187524B - The formation method of phase change resistor in phase transition storage - Google Patents
The formation method of phase change resistor in phase transition storage Download PDFInfo
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- CN103187524B CN103187524B CN201110459303.6A CN201110459303A CN103187524B CN 103187524 B CN103187524 B CN 103187524B CN 201110459303 A CN201110459303 A CN 201110459303A CN 103187524 B CN103187524 B CN 103187524B
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Abstract
In phase transition storage, a formation method for phase change resistor, comprising: provide substrate, is formed with bottom electrode in substrate, and the upper surface of bottom electrode is equal with the upper surface of substrate; Substrate is formed many parallel the first phase change resistors, and the first phase change resistor extends along bit line direction, and the first phase change resistor is positioned on corresponding bottom electrode; Between adjacent two the first phase change resistors, form the fluted dielectric layer of tool, channel bottom exposes corresponding bottom electrode; Fill phase-change material in the trench, form the second phase change resistor, the second phase change resistor extends along bit line direction, and the second phase change resistor is positioned on corresponding bottom electrode.Self-registered technology and photoetching, etching technics combine by technical solution of the present invention, thus morphogenesis characters size can be less than the phase change resistor of 40nm.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the formation method of phase change resistor in phase transition storage.
Background technology
Along with the development of information technology, the needs of memory device are increasing, therefore facilitate memory device towards high-performance, low pressure, low-power consumption, high speed and high density future development.Phase transition storage (PCRAM, phasechangeRandomAccessMemory) be the nonvolatile memory of new generation grown up on CMOS integrated circuit basis, it uses the alloy of one or more elements of V race or VI race in the periodic table of elements as phase change resistor, with phase change resistor as memory cell, phase change resistor, when concentrating heating with the form of electric pulse, can be unordered amorphous state (resistance is much higher) from orderly crystalline state (resistance is low) fast transition.Typical phase transition storage uses chalcogenide alloy (such as GST, GeSbTe) as phase change resistor, memory cell is a kind of minimum chalcogenide alloy particle, amorphous (the a-GST of phase change resistor, and crystallization (c-GST a-GeSbTe), c-GeSbTe) state has different resistivity, crystalline state has and is approximately kilohm typical resistances of (k Ω), and noncrystalline state has the typical resistances being approximately megohm (M Ω), therefore chalcogenide alloy materials (such as GST, GeSbTe) is usually utilized to make phase change resistor.PCRAM unit is read by the resistance value (i.e. the resistance value of phase change resistor) measuring PCRAM memory cell.
In prior art, the method forming phase change resistor is: directly on the silicon oxide layer with bottom electrode or silicon nitride layer, deposit one deck phase-change material, then on phase-change material layers, patterned photoresist layer is formed, form phase change resistor with patterned photoresist layer for mask carries out etching to phase-change material, remove patterned photoresist layer afterwards.Along with the development of semiconductor technology, in order to reduce the power consumption of memory device and increase storage capacity, the characteristic size (CD) of the memory cell of memory device is more and more less.When the characteristic size (CD) of memory cell is less than 40nm, existing photoetching process can not meet the phase change resistor that when characteristic size reduces, morphogenesis characters size is little.
Many patent documentations about phase transition storage are had in prior art, such as publication number disclosed in 23 days June in 2011 is 2011//0149645A1 disclosed " multi-levelprogrammablePCRAMmemory (multi-level programmable phase-change memory) ", but does not all solve the problem.
Summary of the invention
The problem that the present invention solves is that prior art morphogenesis characters size can not be less than the phase change resistor of 40nm.
For solving the problem, the invention provides the formation method of phase change resistor in a kind of phase transition storage, comprising:
There is provided substrate, be formed with bottom electrode in described substrate, the upper surface of described bottom electrode is equal with the upper surface of described substrate;
Form many parallel the first phase change resistors over the substrate, described first phase change resistor extends along bit line direction, and described first phase change resistor is positioned on corresponding bottom electrode;
Between adjacent two the first phase change resistors, form the fluted dielectric layer of tool, described channel bottom exposes corresponding bottom electrode;
Fill phase-change material in the trench, form the second phase change resistor, described second phase change resistor extends along bit line direction, and described second phase change resistor is positioned on corresponding bottom electrode.
Alternatively, form many parallel the first phase change resistors over the substrate to comprise:
Form phase-change material layers over the substrate;
Carry out graphically to described phase-change material layers, form many parallel the first phase change resistors.
Alternatively, carry out graphically to described phase-change material layers, form many parallel the first phase change resistors and comprise:
Described phase-change material layers forms photoresist layer;
Described photoresist layer is exposed, developing forms patterned photoresist layer, defines the position of the first phase change resistor;
With described patterned photoresist layer for mask, etch described phase-change material layers and form many parallel the first phase change resistors;
Remove described patterned photoresist layer.
Alternatively, before described phase-change material layers forms photoresist layer, also comprise:
Described phase-change material layers is formed first medium layer;
Described first medium layer forms anti-reflecting layer;
Described anti-reflecting layer forms second dielectric layer;
Described photoresist layer is positioned in described second dielectric layer, etches described phase-change material layers with described patterned photoresist layer for after mask etches successively described first medium layer, anti-reflecting layer and second dielectric layer.
Alternatively, described first medium layer is normal temperature oxidation silicon layer or low-temperature oxidation silicon layer or silicon nitride layer.
Alternatively, described second dielectric layer is low-temperature oxidation silicon layer.
Alternatively, describedly between adjacent two the first phase change resistor, form the fluted dielectric layer of tool comprise:
Form dielectric layer, cover described first phase change resistor and described substrate;
Carry out graphically to described dielectric layer, between adjacent two the first phase change resistors, form groove.
Alternatively, described dielectric layer is graphically comprised:
Described dielectric layer forms photoresist layer;
Described photoresist layer is exposed, developing forms patterned photoresist layer, defines the position of groove;
With described patterned photoresist layer for mask etches described dielectric layer;
Remove described patterned photoresist layer.
Alternatively, described dielectric layer is normal temperature oxidation silicon layer or low-temperature oxidation silicon layer or silicon nitride layer.
Alternatively, fill phase-change material in the trench, form the second phase change resistor and comprise:
Form phase-change material, cover described dielectric layer and the first phase change resistor and fill up described groove;
Utilize flatening process to remove dielectric layer on the first phase change resistor, phase-change material and exceed the phase-change material of described groove, forming the second phase change resistor.
Alternatively, described flatening process is chemical-mechanical planarization.
Alternatively, the material of described bottom electrode is tungsten aluminium, titanium, titanium nitride, tantalum nitride.
Alternatively, the material of described first phase change resistor is chalcogenide alloy.
Alternatively, the material of described second phase change resistor is chalcogenide alloy.
Compared with prior art, the present invention has the following advantages:
The formation method of phase change resistor in the formation phase transition storage of technical solution of the present invention, phase change resistor in phase transition storage is divided into the first phase change resistor and the second phase change resistor, first phase change resistor and the second phase change resistor interval are arranged, therefore, characteristic size between first phase change resistor is the twice of the characteristic size between the first phase change resistor and the second phase change resistor, photoetching is utilized when formation the first phase change resistor, etching technics is formed, when forming the second phase change resistor between adjacent two first phase change resistors, second phase change resistor utilizes depositing operation to be formed, and non-used photoetching, etching technics is formed, first phase change resistor and the second phase change resistor constitute the memory resistor in phase transition storage, therefore technical solution of the present invention is by self-registered technology and photoetching, etching technics combines, thus morphogenesis characters size can be less than the phase change resistor of 40nm, namely the characteristic size between the first phase change resistor and the second phase change resistor is less than the phase change resistor of 40nm.
Accompanying drawing explanation
Fig. 1 is the flow chart of the formation method of phase change resistor in the phase transition storage of the embodiment of the present invention;
Fig. 2 ~ Fig. 8 is the cross-sectional view of formation method along word-line direction of phase change resistor in the phase transition storage of the embodiment of the present invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public embodiment.
Fig. 1 is the flow chart of the formation method of phase change resistor in the phase transition storage of the embodiment of the present invention, and with reference to figure 1, in the phase transition storage of the embodiment of the present invention, the formation method of phase change resistor comprises:
Step S11, provides substrate, is formed with bottom electrode in described substrate, and the upper surface of described bottom electrode is equal with the upper surface of described substrate;
Step S12, form many parallel the first phase change resistors over the substrate, described first phase change resistor extends along bit line direction, and described first phase change resistor is positioned on corresponding bottom electrode;
Step S13, forms the fluted dielectric layer of tool between adjacent two the first phase change resistors, and described channel bottom exposes corresponding bottom electrode;
Step S14, fills phase-change material in the trench, forms the second phase change resistor, and described second phase change resistor extends along bit line direction, and described second phase change resistor is positioned on corresponding bottom electrode.
Fig. 2 ~ Fig. 8 is the cross-sectional view of formation method along word-line direction of phase change resistor in the phase transition storage of the embodiment of the present invention, in conjunction with the formation method of phase change resistor in the phase transition storage describing the embodiment of the present invention with reference to figure 1 and Fig. 2 ~ Fig. 8 in detail.
In conjunction with reference to figure 1 and Fig. 2, perform step S11, provide substrate 10, be formed with bottom electrode 11 in described substrate 10, the upper surface of described bottom electrode 11 is equal with the upper surface of described substrate 10.It should be noted that, in the present invention, the upper surface of bottom electrode 11 is equal with the upper surface of substrate 10 and do not mean that the upper surface of bottom electrode 11 is completely equal with the upper surface of substrate 10, allows to there is certain error between the two not exclusively equal in certain process conditions.In the specific embodiment of the invention, the material of substrate 10 can be monocrystalline silicon (Si), monocrystalline germanium (Ge) or SiGe (GeSi), carborundum (SiC); Also can be silicon-on-insulator (SOI), germanium on insulator (GOI); Or can also be other material, the III-V such as such as GaAs.In substrate 10, be formed with other device architectures, such as transistor, be electrically connected with bottom electrode 11, provide voltage to bottom electrode 11.
In conjunction with reference to figure 1 and Fig. 4, perform step S12, described substrate 10 is formed many parallel the first phase change resistors 121, and described first phase change resistor 121 is along bit line direction, and described first phase change resistor 121 is positioned on corresponding bottom electrode 11.In the specific embodiment of the invention, described substrate 10 is formed many parallel the first phase change resistors 121 and comprises: with reference to figure 3, described substrate 10 forms phase-change material layers 12; Described phase-change material layers 12 forms first medium layer 13; Described first medium layer 13 forms anti-reflecting layer 14; Described anti-reflecting layer 14 forms second dielectric layer 15; Described second dielectric layer 15 forms patterned photoresist layer 16; In conjunction with reference to figure 3 and Fig. 4, with described patterned photoresist layer 16 for after mask etches described second dielectric layer 15, anti-reflecting layer 14, first medium layer 13 successively, then etching phase change material layer 12 forms many parallel the first phase change resistors 121, removes the first medium layer after the second dielectric layer after patterned photoresist layer, etching, the anti-reflecting layer after etching, etching afterwards.The method of etching is dry etching.
It should be noted that, in the present invention, also second dielectric layer 15, anti-reflecting layer 14, first medium layer 13 can be formed, but directly on phase-change material layers 12, form patterned photoresist layer, afterwards, with patterned photoresist layer for mask, dry etching phase-change material layers 12 forms the first phase change resistor 121.Be specially: on described phase-change material layers, form photoresist layer; Described photoresist layer is exposed, developing forms patterned photoresist layer, defines the position of the first phase change resistor; With described patterned photoresist layer for mask, etch described phase-change material layers and form many parallel the first phase change resistors; Remove patterned photoresist layer afterwards.
In the specific embodiment of the invention, owing to carrying out the impact of optical effect in exposure process to photoresist layer, cause the exposure resolution ratio of photoresist layer to reduce, use the object of anti-reflecting layer to be the impact of offsetting optical effect, improve the exposure accuracy of photoresist layer; In addition, at the thickness low LCL of photoresist layer, after being run out of by the ion in dry etching, second dielectric layer 15 can use as hard mask.
In the specific embodiment of the invention, because anti-reflecting layer 14 is organic substance, at high temperature easily be damaged, therefore in the specific embodiment of the invention, adopt low-temperature oxidation silicon layer as second dielectric layer 15, but be not limited to low-temperature oxidation silicon layer, other that also can be known to the skilled person can be formed in dielectric material on anti-reflecting layer.First medium layer 13 is normal temperature oxidation silicon layer; also can be cryogenic oxidation silicon layer (lowtemperatureoxide) or silicon nitride layer; but be not limited to normal temperature oxidation silicon layer, low-temperature oxidation silicon layer or silicon nitride layer, other that also can be known to the skilled person can be protected phase-change material but not affect technique and electrical cover layer.
In the specific embodiment of the invention, the material of the first phase change resistor is chalcogenide alloy, can be Ge
xsb
yte
z(0 < x, y, z < 1, x+y+z=1), Ag-In-Sb-Te, Ge-Bi-Te or other phase-change materials.
In conjunction with reference to figure 1 and Fig. 6, perform step S13, form the dielectric layer 21 with groove 23 between adjacent two the first phase change resistors 121, described groove 23 bottom-exposed goes out corresponding bottom electrode 11.In the specific embodiment of the invention, between adjacent two the first phase change resistors 121, form the dielectric layer 21 with groove 23 comprise: with reference to figure 5, form dielectric layer 21, cover described first phase change resistor 121 and described substrate 10; With reference to figure 6, carry out graphically to described dielectric layer 21, between adjacent two the first phase change resistors 121, form groove 23.Concrete, method dielectric layer 21 graphically being formed to groove 23 comprises: on dielectric layer 21, form photoresist layer; Described photoresist layer is exposed, developing forms patterned photoresist layer, defines the position of groove; Then, with described patterned photoresist layer for mask carries out etching the groove 23 being formed and expose corresponding bottom electrode 11 to described dielectric layer, the method for etching is dry etching; Then, utilize the method for ashing to remove described patterned photoresist and anti-reflecting layer, if after patterned photoresist and anti-reflecting layer are removed in ashing, still have residue, the step of cleaning can be carried out, remove the residue in photoetching process.
In the specific embodiment of the invention, dielectric layer 21 is silicon oxide layer, but in the present invention, dielectric layer 21 is not limited to silicon oxide layer, other dielectric materials that also can be known to the skilled person.
In this embodiment, dielectric layer 21 between the first phase change resistor, and is formed on the first phase change resistor 21.In other embodiments, also only can form dielectric layer between the first phase change resistor, the first phase change resistor 21 does not form dielectric layer, concrete, for utilizing flatening process, the dielectric layer be formed on the first phase change resistor 21 can be removed.
In conjunction with reference to figure 1 and Fig. 8, perform step S14, fill phase-change material in the trench, form the second phase change resistor 221, described second phase change resistor 221 is along bit line direction, and described second phase change resistor 221 is positioned on corresponding bottom electrode 11.First phase change resistor 121 and the second phase change resistor 221 are parallel to each other and are bar shaped, extend along bit line direction.First phase change resistor 121 and the second phase change resistor 221 together constitute the phase change resistor in phase transition storage.
In the specific embodiment of the invention, fill phase-change material in the trench, form the second phase change resistor 221 and comprise: with reference to figure 7, form phase-change material layers 22, cover described dielectric layer 21 and the first phase change resistor 121 and fill up described groove 23; Afterwards, utilize flatening process to remove dielectric layer 21 on the first phase change resistor 121, phase-change material layers 22 and exceed the phase-change material of described groove, the upper surface forming the second phase change resistor 221, second phase change resistor is equal with the upper surface of the first phase change resistor.In the specific embodiment of the invention, the flatening process of use is chemico-mechanical polishing planarization, but in the present invention, flatening process is not limited to chemico-mechanical polishing planarization, other flatening process that also can be known to the skilled person.It should be noted that, in the present invention, the upper surface of the second phase change resistor is equal with the upper surface of the first phase change resistor and do not mean that both are strictly equal, allows under certain process conditions, to there is certain error between them.
In the specific embodiment of the invention, the material of the second phase change resistor is chalcogenide alloy, can be Ge
xsb
yte
z(0 < x, y, z < 1, x+y+z=1), Ag-In-Sb-Te, Ge-Bi-Te or other phase-change materials.
Afterwards, bit line can be formed on the first phase change resistor, the second phase change resistor, between bit line and the first phase change resistor, the second phase change resistor, form etching barrier layer.The method forming bit line and etching barrier layer is known to the skilled person technology, does not repeat at this.
In specific embodiment described above, the first phase change resistor 121 and the second phase change resistor 221 interval are arranged, and form second phase change resistor between two adjacent the first phase change resistors; But in the present invention, formation second phase change resistor is not limited between two adjacent the first phase change resistors, also can form two and plural second phase change resistor, between adjacent two the first phase change resistors, in dielectric layer, the quantity of groove adjusts accordingly.
In the formation phase transition storage of technical solution of the present invention, the formation method of phase change resistor, comprising: provide substrate, is formed with bottom electrode in substrate, and the upper surface of bottom electrode is equal with the upper surface of substrate; Substrate is formed many parallel the first phase change resistors, and the first phase change resistor is along bit line direction; Between adjacent two the first phase change resistors, form the fluted dielectric layer of tool, channel bottom exposes described substrate; Fill phase-change material in the trench, form the second phase change resistor, the second phase change resistor is along bit line direction.That is, phase change resistor in phase transition storage is divided into the first phase change resistor and the second phase change resistor, first phase change resistor and the second phase change resistor interval are arranged, therefore, characteristic size between first phase change resistor is the twice of the characteristic size between the first phase change resistor and the second phase change resistor, photoetching is utilized when formation the first phase change resistor, etching technics is formed, when forming the second phase change resistor between adjacent two first phase change resistors, second phase change resistor utilizes depositing operation to be formed, and non-used photoetching, etching technics is formed, first phase change resistor and the second phase change resistor constitute the memory resistor in phase transition storage, therefore technical solution of the present invention is by self-registered technology and photoetching, etching technics combines, thus morphogenesis characters size can be less than the phase change resistor of 40nm, namely the characteristic size between the first phase change resistor and the second phase change resistor is less than the phase change resistor of 40nm.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (9)
1. the formation method of phase change resistor in phase transition storage, is characterized in that, comprising:
There is provided substrate, be formed with bottom electrode in described substrate, the upper surface of described bottom electrode is equal with the upper surface of described substrate;
Form phase-change material layers over the substrate, described phase-change material layers forms photoresist layer, described photoresist layer is exposed, developing forms patterned photoresist layer, define the position of the first phase change resistor, with described patterned photoresist layer for mask, etch described phase-change material layers to form many parallel the first phase change resistors over the substrate, described first phase change resistor extends along bit line direction, and described first phase change resistor is positioned on corresponding bottom electrode;
Form dielectric layer, cover described first phase change resistor and described substrate; Described dielectric layer forms photoresist layer; Photoresist layer on dielectric layer is exposed, developing forms patterned photoresist layer, defines the position of groove; With photoresist layer patterned on dielectric layer for mask etches described dielectric layer, to form the fluted dielectric layer of tool between adjacent two the first phase change resistors, described channel bottom exposes corresponding bottom electrode; Remove patterned photoresist layer on dielectric layer;
Fill phase-change material in the trench, form the second phase change resistor, described second phase change resistor extends along bit line direction, and described second phase change resistor is positioned on corresponding bottom electrode.
2. the formation method of phase change resistor in phase transition storage as claimed in claim 1, is characterized in that, before described phase-change material layers forms photoresist layer, also comprise:
Described phase-change material layers is formed first medium layer;
Described first medium layer forms anti-reflecting layer;
Described anti-reflecting layer forms second dielectric layer;
Described photoresist layer is positioned in described second dielectric layer, etches described phase-change material layers with described patterned photoresist layer for after mask etches successively described first medium layer, anti-reflecting layer and second dielectric layer.
3. the formation method of phase change resistor in phase transition storage as claimed in claim 2, it is characterized in that, described first medium layer is silicon nitride layer.
4. the formation method of phase change resistor in phase transition storage as claimed in claim 1, it is characterized in that, described dielectric layer is silicon nitride layer.
5. the formation method of phase change resistor in phase transition storage as claimed in claim 1, is characterized in that, fill phase-change material in the trench, form the second phase change resistor and comprise:
Form phase-change material, cover described dielectric layer and the first phase change resistor and fill up described groove;
Utilize flatening process to remove dielectric layer on the first phase change resistor, phase-change material and exceed the phase-change material of described groove, forming the second phase change resistor.
6. the formation method of phase change resistor in phase transition storage as claimed in claim 5, it is characterized in that, described flatening process is chemical-mechanical planarization.
7. the formation method of phase change resistor in phase transition storage as claimed in claim 1, it is characterized in that, the material of described bottom electrode is tungsten, aluminium, titanium, titanium nitride, tantalum nitride.
8. the formation method of phase change resistor in phase transition storage as claimed in claim 1, it is characterized in that, the material of described first phase change resistor is chalcogenide alloy.
9. the formation method of phase change resistor in phase transition storage as claimed in claim 1, it is characterized in that, the material of described second phase change resistor is chalcogenide alloy.
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| CN101471233A (en) * | 2007-12-27 | 2009-07-01 | 海力士半导体有限公司 | Method of forming a semiconductor device pattern |
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