CN102903844A - Bottom electrode and phase-change resistor forming method - Google Patents
Bottom electrode and phase-change resistor forming method Download PDFInfo
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- CN102903844A CN102903844A CN2011102096448A CN201110209644A CN102903844A CN 102903844 A CN102903844 A CN 102903844A CN 2011102096448 A CN2011102096448 A CN 2011102096448A CN 201110209644 A CN201110209644 A CN 201110209644A CN 102903844 A CN102903844 A CN 102903844A
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Abstract
A bottom electrode and phase-change resistor forming method includes providing a substrate; forming a first dielectric layer with a bottom electrode on the substrate while keeping the surface of the bottom electrode flush with the surface of the first dielectric layer; forming a mask layer with an opening on the bottom electrode while enabling the opening to be exposed from the bottom electrode; forming block copolymer in the opening, and annealing the block copolymer and dividing the same into different materials arranged at intervals; removing at least one of the different materials, removing part of the bottom electrode with a certain height in an etching manner by utilizing the mask layer and the residual materials as masks and then forming a groove between the bottom electrode and the first dielectric layer; removing the residual material and the mask layer; forming a second dielectric layer in the groove while enabling the surface of the second dielectric layer to be flush with the surface of the first dielectric layer; and finally forming a phase-change resistor on the bottom electrode. The bottom electrode and phase-change resistor forming method is easy to process and control.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to the formation method of bottom electrode and phase change resistor.
Background technology
Along with the development of information technology, the needs of memory device are increasing, therefore promoted memory device towards high-performance, low pressure, low-power consumption, high speed and high density future development.Phase transition storage (PCRAM, phase change Random Access Memory) be the nonvolatile memory of new generation that grows up on CMOS integrated circuit basis, the alloy of one or more elements of V family or VI family is as phase change resistor in its use periodic table of elements, with phase change resistor as memory cell, phase change resistor is concentrated in the situation of heating in the form with electric pulse, can be unordered amorphous state (resistance is much higher) from orderly crystalline state (resistance is low) fast transition.Typical phase transition storage uses chalcogenide alloy (such as GST, GeSbTe) as phase change resistor, memory cell is a kind of minimum chalcogenide alloy particle, amorphous (the a-GST of phase change resistor, a-GeSbTe) and crystallization (c-GST, c-GeSbTe) state has different resistivity, crystalline state has and is approximately kilohm typical resistances of (k Ω), and noncrystalline state has the typical resistances of the megohm of being approximately (M Ω), therefore usually utilize chalcogenide alloy materials (such as GST, GeSbTe) to make phase change resistor.Read the PCRAM unit by the resistance value (being the resistance value of phase change resistor) of measuring the PCRAM memory cell.
For phase transition storage, the contact area between bottom electrode and the phase change resistor is less, and the performance of phase transition storage is better.Fig. 1 to Fig. 6 is the cross-sectional view that prior art forms the method for bottom electrode and phase change resistor, referring to figs. 1 to Fig. 6, the method that forms bottom electrode and phase change resistor in the prior art comprises: with reference to figure 1, substrate 10 is provided, is formed with the first medium layer 11 with bottom electrode 12 in the substrate 10; With reference to figure 2, on the surface of first medium layer 11 and bottom electrode 12 formation, form successively silicon oxide layer 13, silicon nitride layer 14, silicon oxide layer 15, utilize the graphical described silica 15 of photoetching/etching to form therein opening 151, the bottom-exposed of this opening 151 goes out silicon nitride layer 14; With reference to figure 3, deposited silicon nitride layer 16 covers the surface of described silicon oxide layer 15, bottom and the sidewall of opening 151; With reference to figure 4, etching is removed the silicon nitride layer 16 of silicon oxide layer 15 surfaces, opening 151 bottoms, the silicon nitride layer 161 (being called side wall) of residue opening 151 sidewalls is because the sidewall of opening 151 has increased this silicon nitride layer 161, so that the bore of opening 151 reduces; With reference to figure 5, take silicon nitride layer 14 and the silicon oxide layer 13 of silicon oxide layer 15 below mask etching opening 151 with opening 151, form through hole 17; With reference to figure 6, form phase change resistor 18 at through hole 17 interior filling phase-change materials.
Because the sidewall of opening 151 has increased this silicon nitride layer 161, so that the bore of opening 151 reduces, the bore of the through hole 17 that therefore forms also reduces, and phase change resistor 18 also just reduces accordingly with the contact area of bottom electrode 12 like this.Yet the development along with semiconductor technology, the characteristic size of device is more and more less, reduce the very difficult control of technique of the bore of opening 151 by the method that forms side wall at the sidewall of opening 151, that is to say that the bottom electrode that utilizes above-described method to form to have little contact area and the technique of phase change resistor are difficult to control.
Summary of the invention
The problem that the embodiment of the invention solves is that prior art formation has the bottom electrode of little contact area and the technique of phase change resistor is difficult to control.
For addressing the above problem, the embodiment of the invention provides the formation method of a kind of bottom electrode and phase change resistor, comprising:
Substrate is provided;
Form the first medium layer with bottom electrode in described substrate, the surface of described bottom electrode is surperficial equal with described first medium layer;
Form the mask layer with opening at described bottom electrode, described opening exposes described bottom electrode;
Form block copolymer in described opening, described block copolymer is annealed is divided into spaced different materials with described block copolymer;
Remove at least a material in the spaced different materials, remove the bottom electrode of Partial Height take described mask layer and remaining material as mask etching, between described bottom electrode and described first medium layer, form groove;
Remove remaining material and mask layer;
Form the second medium layer in described groove, the surface of described second medium layer is surperficial equal with described first medium layer;
Form phase change resistor at remaining bottom electrode.
Alternatively, the material of described block copolymer is the polystyrene-poly methyl methacrylate;
Form block copolymer in described opening, described block copolymer is annealed to be divided into spaced different materials with described block copolymer and to comprise:
In described opening, form the polystyrene-poly methyl methacrylate, described polystyrene-poly methyl methacrylate is annealed, after the annealing, described polystyrene-poly methyl methacrylate material is divided into spaced polymethyl methacrylate and polystyrene;
At least a material is for removing polymethyl methacrylate in the spaced different materials of described removal, and remaining material is polystyrene.
Alternatively, the described method that forms the polystyrene-poly methyl methacrylate in described opening is spin-coating method.
Alternatively, under ultraviolet irradiation, utilize acetic acid to remove polymethyl methacrylate.
Alternatively, the method for the described bottom electrode of removing Partial Height take described mask layer and remaining material as mask is as dry etching.
Alternatively, described mask layer is photoresist layer;
Forming the mask layer with opening at described bottom electrode comprises:
Surface in described bottom electrode and the formation of first medium layer forms photoresist layer;
Graphical described photoresist layer forms the photoresist layer with opening at described bottom electrode.
Alternatively, the remaining material of described removal and mask layer comprise:
Utilize oxygen plasma to remove remaining material and mask layer.
Alternatively, the described second medium layer that in described groove, forms, surperficial equal the comprising of the surface of described second medium layer and described first medium layer:
Form the second medium layer, fill up described groove and cover described first medium layer, remaining bottom electrode;
Removal exceeds the second medium layer on described first medium layer surface, remains the second medium layer in the described groove, and the surface that makes described second medium layer is surperficial equal with described first medium layer.
Alternatively, the material of described first medium layer is silica.
Alternatively, the material of described bottom electrode is tungsten or copper or polysilicon.
Alternatively, the material of described second medium layer is silica.
Alternatively, the material of described phase change resistor is chalcogenide alloy.
Compared with prior art, the technical program has the following advantages:
The technical program has the mask layer of opening by formation, and described opening exposes described bottom electrode; Form block copolymer in described opening, this block copolymer is divided into spaced different materials after annealing process; Then, remove at least a material in the spaced different materials; Then remove the bottom electrode of Partial Height take mask layer and remaining material as mask etching, the area of the end face of bottom electrode has also just dwindled like this, when remaining bottom electrode formed phase change resistor, the contact area between phase change resistor and the bottom electrode reduced afterwards.Can control the area that bottom electrode contacts with phase change resistor according to the width of surplus material by the synthetic of regulating block copolymer and the width that molecular weight is adjusted each spaced different materials, so technique is simple, easily control.
Description of drawings
Fig. 1 to Fig. 6 is the cross-sectional view of the formation method of prior art bottom electrode and phase change resistor;
Fig. 7 is the schematic flow sheet of the formation method of the bottom electrode of the specific embodiment of the invention and phase change resistor;
Fig. 8 a, Fig. 8 b to Figure 15 a, Figure 15 b are cross-sectional view, the schematic top plan view of the formation method of the bottom electrode of the specific embodiment of the invention and phase change resistor.
Embodiment
Block copolymer (block copolymer) claim again block copolymer, is the linear copolymers that is formed by the different segment alternating polymerization of chemical constitution.Block copolymer is processed through annealing process can be divided into spaced different materials, and each material has identical chemical constitution.Polystyrene-poly methyl methacrylate (Ps-b-PMMA) for example, can be divided into spaced two kinds of different materials through the annealing process processing, a kind of material is polystyrene (Ps, polystyrene), and another kind of material is polymethyl methacrylate (PMMA).
According to the characteristic of block copolymer, the technical program has the mask layer of opening by formation, and described opening exposes described bottom electrode; Form block copolymer in described opening, this block copolymer is divided into spaced different materials after annealing process, then, removes at least a material in the spaced different materials; Then, remove the bottom electrode of Partial Height take mask layer and remaining material as mask etching, the area of the end face of bottom electrode has also just dwindled like this, and when remaining bottom electrode formed phase change resistor, the contact area between phase change resistor and the bottom electrode reduced afterwards.Can control the area that bottom electrode contacts with phase change resistor according to the width of surplus material by the synthetic of regulating block copolymer and the width that molecular weight is adjusted each spaced different materials, so technique is simple, easily control.
For those skilled in the art be can better understand the present invention, describe the bottom electrode of the specific embodiment of the invention and the formation method of phase change resistor in detail below in conjunction with accompanying drawing.
Fig. 7 is the schematic flow sheet of the method for the formation bottom electrode of the specific embodiment of the invention and phase change resistor, and with reference to figure 7, the formation bottom electrode of the specific embodiment of the invention and the method for phase change resistor comprise:
Step S11 provides substrate;
Step S12 is formed with the first medium layer with bottom electrode in described substrate, and the surface of described bottom electrode is surperficial equal with described first medium layer;
Step S13 forms the mask layer with opening at described bottom electrode, and described opening exposes described bottom electrode;
Step S14 forms block copolymer in described opening, described block copolymer is annealed is divided into spaced different materials with described block copolymer;
Step S15 removes at least a material in the spaced different materials, removes the bottom electrode of Partial Height take described mask layer and remaining material as mask etching, forms groove between described bottom electrode and described first medium layer;
Step S16 removes remaining material and mask layer;
Step S17 forms the second medium layer in described groove, the surface of described second medium layer is surperficial equal with described first medium layer;
Step S18 forms phase change resistor at remaining bottom electrode.
Fig. 8 a, Fig. 8 b to Figure 15 a, Figure 15 b are cross-sectional view, the schematic top plan view of the formation method of the bottom electrode of the specific embodiment of the invention and phase change resistor, the figure a of each picture group is that the figure b of correspondence is along the cross-sectional view of a-a direction, below in conjunction with Fig. 7 and Fig. 8 a, Fig. 8 b to Figure 15 a, the bottom electrode of the detailed specific embodiment of the invention of Figure 15 b and the formation method of phase change resistor.
In conjunction with reference to figure 7 and Fig. 8 a, Fig. 8 b, execution in step S11 provides substrate 30; Execution in step S12 forms the first medium layer 31 with bottom electrode 32 in described substrate 30, and the surface of described bottom electrode 32 is surperficial equal with described first medium layer 31.Need to prove, among the present invention, the surface of bottom electrode 32 is with the surperficial equal of described first medium layer 31 and do not mean that the surface of bottom electrode 32 is fully equal with the surface of described first medium layer 31, in certain process conditions, allow both surfaces to have certain error, not exclusively equal.In the specific embodiment of the invention, the material of substrate 30 can be monocrystalline silicon (Si), monocrystalline germanium (Ge) or SiGe (GeSi), carborundum (SiC); Also can be silicon-on-insulator (SOI), germanium on insulator (GOI); Perhaps can also be for other material, such as III-V compounds of group such as GaAs.The material of first medium layer 31 is silica in the specific embodiment of the invention, but is not limited to silica, can be for well known to a person skilled in the art other materials.The material of bottom electrode 32 is tungsten or copper or polysilicon, but is not limited to tungsten or copper or polysilicon, can be for well known to a person skilled in the art other materials.The method that forms bottom electrode 32 is: utilize chemical vapour deposition (CVD) or physical vapour deposition (PVD) or well known to a person skilled in the art additive method, form first medium layer 31 in substrate 30; Utilize photoetching, the graphical first medium layer 31 of etching technics, in first medium layer 31, form through hole; Filled conductive material in through hole afterwards, for example copper or tungsten or polysilicon form bottom electrode 32.
In conjunction with reference to figure 7 and Fig. 9 a, 9b, execution in step S13 forms the mask layer 33 with opening 34 at described bottom electrode 32, and described opening 34 exposes described bottom electrode 32.In the specific embodiment of the invention, mask layer 33 is photoresist layer, forms photoresist layer on the surface of first medium layer 31 and bottom electrode 32, afterwards photoresist layer is carried out exposure imaging, and graphical photoresist layer forms the opening 34 that exposes bottom electrode 32.Among the present invention, mask layer 33 is not limited to photoresist layer, also can be for well known to a person skilled in the art other materials, and according to the variation of its material, the method that forms the mask layer 33 with opening 34 changes accordingly.
In conjunction with reference to figure 7 and Figure 10 a, Figure 10 b, Figure 11 a, Figure 11 b, execution in step S14, form block copolymer 35 (with reference to figure 10a, Figure 10 b) in described opening, described block copolymer 35 is annealed is divided into spaced different materials (with reference to figure 11a, Figure 11 b) with described block copolymer 35.In the specific embodiment of the invention, the material of block copolymer 35 is polystyrene-poly methyl methacrylate (Ps-b-PMMA), the characteristic that this Ps-b-PMMA material has: can be divided into spaced two kinds of different materials through the annealing process processing, a kind of material is polystyrene (Ps, polystyrene), another kind of material is polymethyl methacrylate (PMMA).In this specific embodiment, described block copolymer 35 annealed described block copolymer 35 is divided into spaced different materials comprises: with reference to figure 10a, Figure 10 b, at described opening 34 interior formation polystyrene-poly methyl methacrylates (Ps-b-PMMA), with reference to figure 11a, Figure 11 b, described polystyrene-poly methyl methacrylate (Ps-b-PMMA) is annealed, after the annealing, described polystyrene-poly methyl methacrylate (Ps-b-PMMA) material is divided into spaced polymethyl methacrylate (PMMA) 351 and polystyrene (Ps, polystyrene) 352.In this embodiment, because the restriction of opening features size, spaced polymethyl methacrylate (PMMA) 351 and polystyrene (Ps, polystyrene) 352 columns is limited, in this specific embodiment, polymethyl methacrylate (PMMA) 351 is two row, be positioned at polystyrene (Ps, polystyrene) 352 the outside, polystyrene (Ps, polystyrene) 352 is row, is positioned at the centre of two row polymethyl methacrylates (PMMA) 351.Forming Ps-b-PMMA in described opening comprises: utilize spin-coating method spin coating Ps-b-PMMA to cover described mask layer and fill up described opening; Remove afterwards described opening Ps-b-PMMA in addition.Remove the Ps-b-PMMA beyond the described opening method can for: the Ps-b-PMMA material on opening forms mask layer, then utilizes dry etching to remove Ps-b-PMMA material beyond the opening.Because Ps-b-PMMA can not affect subsequent technique beyond being formed on opening, therefore in other embodiments, also can remove opening Ps-b-PMMA in addition, in technique subsequently, remove and remove in the lump the opening Ps-b-PMMA material after annealing in addition when remaining material is polystyrene 352 and mask layer, can save like this technique of removing opening Ps-b-PMMA material in addition, be conducive to reduce cost.In this embodiment, the spaced material of removal is polymethyl methacrylate 351, and remaining material is polystyrene 352.In other embodiments, can be polystyrene 352 for the spaced material of removing also, remaining material is polymethyl methacrylate 351.
In the specific embodiment of the invention, material in the opening is Ps-b-PMMA, therefore after annealing in process, material in the middle of remaining being positioned at is polystyrene 352, the top surface area of bottom electrode in the technique after the characteristic size of this polystyrene 352 has determined, the size that is to say remaining material has determined the top surface area of bottom electrode.Wherein, in the spaced different materials that is divided into after the block copolymer annealing, the characteristic size of each material and the structure of its body and molecular weight have relation, therefore synthetic (also can say monomer monomer) that can be by adjustment block copolymer 35 and the molecular weight (perhaps can say volume fraction (volume fraction)) of synthetic are adjusted the characteristic size of surplus material, thereby the top surface area of control bottom electrode 32, the i.e. contact area of bottom electrode and phase change resistor.
In conjunction with reference to figure 7 and Figure 12 a, Figure 12 b, execution in step S15, remove at least a material in the spaced different materials, remove the bottom electrode 32 of Partial Height take described mask layer 33 and remaining material as mask etching, between described bottom electrode 32 and described first medium layer 33, form groove 36.In the specific embodiment of the invention, at least a material is for removing polymethyl methacrylate 351 in the spaced different materials of described removal; Remaining material is polystyrene 352.In the instantiation of the present invention, under ultraviolet irradiation, utilize acetic acid to remove the polymethyl methacrylate 351 that is positioned at the outside.Remove the method for bottom electrode 32 of Partial Height take described mask layer 33 and polystyrene 352 as mask etching as dry etching.Can adjust by the time of adjusting dry etching the height of the bottom electrode of the removal that is etched.Need to prove that during etching bottom electrode 32, if first medium layer 31 is had high etching selection ratio, the loss of first medium layer is fewer, basic etching bottom electrode 32; If first medium layer 31 is had low etching selection ratio, also etching first medium layer 31 during etching bottom electrode 32, groove 36 be shaped as strip.
In conjunction with reference to figure 7 and Figure 13 a, Figure 13 b, execution in step S16 removes remaining material and mask layer 33.That is, remove polystyrene 352 and mask layer 33, utilize the oxygen plasma dry etching to remove polystyrene 352 and mask layer 33 in the embodiment of the invention.
Accordingly, if the spaced material of removing is polystyrene 352, remaining material is polymethyl methacrylate 351.Can utilize dry etching to remove polystyrene 352, under ultraviolet irradiation, utilize afterwards acetic acid to remove the polymethyl methacrylate 351 that is positioned at the outside, then remove mask layer 33 with dry etching.
In conjunction with reference to figure 7 and Figure 14 a, Figure 14 b, execution in step S17, at described groove 36 interior formation second medium layers 37, the surface of described second medium layer 37 is surperficial equal with described first medium layer 31.First medium layer 31 is not strictly equal with second medium layer 37, allows to exist certain error in certain process conditions.At described groove 36 interior formation second medium layers 37, surperficial equal the comprising of the surface of described second medium layer 37 and described first medium layer 31: form second medium layer 37, fill up described groove 36 and cover described first medium layer 31, remaining bottom electrode 32; Removal exceeds the second medium layer on described first medium layer 31 surface, remains the second medium layer 37 in the described groove 36, and the surface that makes described second medium layer 37 is surperficial equal with described first medium layer 31.In the specific embodiment of the invention, the material of second medium layer 37 is silica, but is not limited to silica, can be for well known to a person skilled in the art other materials.
In conjunction with reference to figure 7 and Figure 15 a, Figure 15 b, execution in step S18 forms phase change resistors 38 at described remaining bottom electrode 32.The method that forms phase change resistor 38 is: the sediment phase change material, cover first medium layer 31, second medium layer 37 and remaining bottom electrode 32, and this phase-change material is chalcogenide alloy, can be Ge
xSb
yTe
z(0＜x, y, z＜1, x+y+z=1), Ag-In-Sb-Te or Ge-Bi-Te, the phase-change material on patterned phase change material residue second medium layer 37 and the remaining bottom electrode 32 is as phase change resistor 38 afterwards.
Above-described method, the figure that exposes the opening 34 of bottom electrode 32 are strip, are exposed by same strip opening 34 at a bottom electrode that lists 32, and spaced different materials is strip after the block copolymer that therefore forms afterwards and the annealing.In other embodiments, the figure that exposes the opening 34 of bottom electrode 32 can be for square, each opening 34 that exposes bottom electrode 32 separates each other, and the shape of spaced different materials also changes thereupon after the block copolymer that forms afterwards and the annealing.
The above only is specific embodiments of the invention; in order to make those skilled in the art better understand spirit of the present invention; yet protection scope of the present invention is not take the specific descriptions of this specific embodiment as limited range; any those skilled in the art is in the scope that does not break away from spirit of the present invention; can make an amendment specific embodiments of the invention, and not break away from protection scope of the present invention.
Claims (12)
1. the formation method of a bottom electrode and phase change resistor is characterized in that, comprising:
Substrate is provided;
Form the first medium layer with bottom electrode in described substrate, the surface of described bottom electrode is surperficial equal with described first medium layer;
Form the mask layer with opening at described bottom electrode, described opening exposes described bottom electrode;
Form block copolymer in described opening, described block copolymer is annealed is divided into spaced different materials with described block copolymer;
Remove at least a material in the spaced different materials, remove the bottom electrode of Partial Height take described mask layer and remaining material as mask etching, between described bottom electrode and described first medium layer, form groove;
Remove remaining material and mask layer;
Form the second medium layer in described groove, the surface of described second medium layer is surperficial equal with described first medium layer;
Form phase change resistor at remaining bottom electrode.
2. the formation method of bottom electrode as claimed in claim 1 and phase change resistor is characterized in that, the material of described block copolymer is the polystyrene-poly methyl methacrylate;
Form block copolymer in described opening, described block copolymer is annealed to be divided into spaced different materials with described block copolymer and to comprise:
In described opening, form the polystyrene-poly methyl methacrylate, described polystyrene-poly methyl methacrylate is annealed, after the annealing, described polystyrene-poly methyl methacrylate material is divided into spaced polymethyl methacrylate and polystyrene;
At least a material is for removing polymethyl methacrylate in the spaced different materials of described removal; Remaining material is polystyrene.
3. the formation method of bottom electrode as claimed in claim 2 and phase change resistor is characterized in that, the described method that forms the polystyrene-poly methyl methacrylate in described opening is spin-coating method.
4. the formation method of bottom electrode as claimed in claim 2 and phase change resistor is characterized in that, utilizes acetic acid to remove polymethyl methacrylate under ultraviolet irradiation.
5. the formation method of bottom electrode as claimed in claim 1 and phase change resistor is characterized in that, the method for the described bottom electrode of removing Partial Height take described mask layer and remaining material as mask etching is as dry etching.
6. the formation method of bottom electrode as claimed in claim 1 and phase change resistor is characterized in that, described mask layer is photoresist layer;
Forming the mask layer with opening at described bottom electrode comprises:
Surface in described bottom electrode and the formation of first medium layer forms photoresist layer;
Graphical described photoresist layer forms the photoresist layer with opening at described bottom electrode.
7. the formation method of bottom electrode as claimed in claim 6 and phase change resistor is characterized in that, the remaining material of described removal and mask layer comprise:
Utilize oxygen plasma to remove remaining material and mask layer.
8. the formation method of bottom electrode as claimed in claim 1 and phase change resistor is characterized in that, the described second medium layer that in described groove, forms, and surperficial equal the comprising of the surface of described second medium layer and described first medium layer:
Form the second medium layer, fill up described groove and cover described first medium layer, remaining bottom electrode;
Removal exceeds the second medium layer on described first medium layer surface, remains the second medium layer in the described groove, and the surface that makes described second medium layer is surperficial equal with described first medium layer.
9. the formation method of bottom electrode as claimed in claim 1 and phase change resistor is characterized in that, the material of described first medium layer is silica.
10. the formation method of bottom electrode as claimed in claim 1 and phase change resistor is characterized in that, the material of described bottom electrode is tungsten or copper or polysilicon.
11. the formation method of bottom electrode as claimed in claim 1 and phase change resistor is characterized in that, the material of described second medium layer is silica.
12. the formation method of bottom electrode as claimed in claim 1 and phase change resistor is characterized in that, the material of described phase change resistor is chalcogenide alloy.
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| CN104681717A (en) * | 2013-12-02 | 2015-06-03 | 爱思开海力士有限公司 | Methods Of Fabricating Nano-scale Structures And Nano-scale Structures Fabricated Thereby |
| CN105449100A (en) * | 2014-08-27 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Phase change random access memory and forming method thereof |
| CN114203928A (en) * | 2021-12-03 | 2022-03-18 | Oppo广东移动通信有限公司 | Electrode and preparation method thereof, OLED device and electronic equipment |
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| CN104681717A (en) * | 2013-12-02 | 2015-06-03 | 爱思开海力士有限公司 | Methods Of Fabricating Nano-scale Structures And Nano-scale Structures Fabricated Thereby |
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| CN114203928A (en) * | 2021-12-03 | 2022-03-18 | Oppo广东移动通信有限公司 | Electrode and preparation method thereof, OLED device and electronic equipment |
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Application publication date: 20130130 |