CN103187312A - Fabrication method of rewiring layer in wafer level packaging structure and wafer level packaging structure - Google Patents
Fabrication method of rewiring layer in wafer level packaging structure and wafer level packaging structure Download PDFInfo
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- CN103187312A CN103187312A CN2011104482495A CN201110448249A CN103187312A CN 103187312 A CN103187312 A CN 103187312A CN 2011104482495 A CN2011104482495 A CN 2011104482495A CN 201110448249 A CN201110448249 A CN 201110448249A CN 103187312 A CN103187312 A CN 103187312A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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Abstract
The invention provides a fabrication method of a rewiring layer in a wafer level packaging structure and the wafer level packaging structure. The fabrication method of the rewiring layer in a wafer level packaging structure based on a dielectric film comprises the steps that the fabricated dielectric film is pasted on the surface of a to-be-packaged wafer coated with an adhesive agent; a rewiring lead layer is fabricated on the surface of the dielectric film based on the quantity of electrical connection points on the surface of the to-be-packaged wafer; corresponding mutually isolated conductive areas are formed; each conductive area is electrically connected with one electrical connection point; a conductive bump is formed on the surface of each conductive area; and then the wafer level packaging structure is formed. The fabrication method and the wafer level packaging structure have the advantages that a high-temperature solidification process is not required; wafer warping and internal stress can be reduced effectively; a multi-layer rewiring structure can be realized easily; and other passive devices can be embedded into the wafer level packaging structure.
Description
Technical field
The present invention relates to integrated circuit fields, particularly relate to the reroute preparation method of layer and the structure of formation in a kind of wafer-level package structure.
Background technology
Wafer level packaging (WLP) is a kind of a kind of wafer level IC encapsulation technology that adopts the disk processing technology to finish at disk, and this and conventional package have obvious difference.The WLP that reroutes refers to utilize secondary passivation layer (film polymer) and metal level that the pad of layout around the chip heavily is scattered in the face array layout, make interconnected salient points then, process the IC interconnect interface at disk, utilize this interconnect interface to test, wear out, cut apart again disk, directly obtain the IC finished product.BCB commonly used or polyimides (PI) are as the dielectric layer material, and aluminium or copper adopt the bottom metal layers (UBM) of sputtering deposit salient point as the metal that heavily distributes, and silk screen print method or galvanoplastic are made solder bump and refluxed.The WLP that reroutes provides a kind of complete encapsulation scheme, has comprised desired encapsulation functions such as electrical interconnection, mechanical protection, heat management and environmental protection, no matter is to make or assembling simultaneously, does not need extra die-level operation.Suitable create conditions and output under, WLP can significantly reduce cost, and has very big economic advantages.
In the existing WLP that reroutes, integrated circuit front end manufacture craft, i.e. film deposition techniques, photoetching etc. are adopted in the making of the layer that reroutes.Organic dielectric layer (often being BCB or the polyimides) methods of spin coating that adopt are made more.This technology has inherent limitation, for example, can cause bigger internal stress at disk surfaces spin coating organic dielectric layer, and then cause very big disk warpage, continuous increase along with the disk size, warpage also can be more and more serious, and this not only brings huge challenge to automation mechanized operation in the processing line, also bump size and pitch further reduced to have brought obstruction.And the organic dielectric layer after the spin coating needs hot setting, may be incompatible with other technologies.In addition, the organic dielectric layer of making by spin coating proceeding is only realizing rerouting of pad, can't be therein integrated other such as passive capacitive, resistance, electro-magnetic screen layer, devices such as MEMS device.
Summary of the invention
The shortcoming of prior art in view of the above the object of the present invention is to provide a kind ofly to prepare the method for the layer that reroutes in the wafer-level package structure based on dielectric film, and disk internal stress and warpage when reducing wafer level packaging improve package reliability.
Another object of the present invention is to provide a kind of disk internal stress and the little wafer-level package structure of warpage.
Reach other relevant purposes for achieving the above object, the invention provides a kind of based on dielectric film prepare in the wafer-level package structure reroute the layer method, it comprises step at least:
1) prefabricated dielectric film is pasted applied the disk surfaces to be packaged of adhesive;
2) make the conductor layer that reroutes based on the quantity of the electric connecting point of described disk surfaces to be packaged on described dielectric film surface, form the conductive region of the mutual isolation of respective numbers, and make each conductive region be electrically connected an electric connecting point;
Described method also comprises step: form a conductive salient point on each conductive region surface.
Preferably, described method also comprises step:
3) another prefabricated dielectric film is pasted apply adhesive at the body structure surface that forms conductive region;
4) based on the quantity of the conductive region of the described body structure surface that has formed conductive region, make the conductor layer that reroutes on described another dielectric film surface, form the conductive region of the mutual isolation of respective numbers, and make the conductive region on the relative two sides of described another dielectric film form correspondence to be electrically connected.
Preferably, described method also comprises: based on established structure repeating step 3 at least one times) and 4).
Preferably, described dielectric film layer comprises the dielectric film layer with electronic devices and components structure.
The present invention also provides a kind of wafer-level package structure, and it comprises:
The surface comprises at least one electric connecting point disk to be packaged;
Be coated in the adhesive agent layer of described disk surfaces to be packaged;
Stick to the dielectric film layer on described adhesive agent layer surface;
Be formed on the conductor layer of described dielectric film laminar surface, it comprises a conductive region at least, and each conductive region is electrically connected an electric connecting point; And
Be formed on the conductive salient point on each conductive region surface.
Preferably, described dielectric film layer comprises the sandwich construction that is formed by adhesive agent layer and dielectric film layer.
Preferably, described dielectric film layer comprises the dielectric film layer with electronic devices and components structure.
As mentioned above, preparation method and the formed structure of the layer that reroutes in the wafer-level package structure of the present invention, have following beneficial effect: this structure does not need the hot setting process, can effectively reduce disk warpage and internal stress, can be easy to realize the multilayer structure that reroutes, this structure also allows embedded other passive devices simultaneously.
Description of drawings
Fig. 1 a-1f is shown as embodiment one flow chart for preparing the method for the layer that reroutes in the wafer-level package structure based on dielectric film of the present invention.
Fig. 2 a-2c is shown as embodiment two flow charts that prepare the method for the layer that reroutes in the wafer-level package structure based on dielectric film of the present invention.
The element numbers explanation
101 disks to be packaged;
102 pads
103,203 binding agents
104,204 dielectric films
105 metal levels
105 ', 205 ' conductive region
106,206 conductive salient points
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 1 a to Fig. 2 c.Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in the diagram with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also may be more complicated.
Embodiment one:
Present embodiment based on dielectric film prepare in the wafer-level package structure reroute the layer process as follows:
The first step: after disk to be packaged 101 surfaces are cleaned, with the method for spin coating at the very thin bonding agent 103 of surface-coated one deck, again prefabricated dielectric film 104 is placed on disk to be packaged 101 surfaces that apply bonding agent 103, apply certain pressure, make dielectric film 104 paste on disk to be packaged 101 surfaces, shown in Fig. 1 a and 1b by bonding agent 103.
Wherein, the material of described dielectric film 104 comprises BCB or polyimides (PI) etc., preferably, comprises the structure of electronic devices and components in the described dielectric film 104, for example, comprises formation passive capacitive, resistance, electro-magnetic screen layer, the structure of MEMS device etc.
Second step: the quantity based on the electric connecting point on described disk 101 surfaces to be packaged is made the conductor layers that reroute on described dielectric film 104 surfaces, form the conductive region of the mutual isolation of respective numbers, and make each conductive region be electrically connected an electric connecting point.Wherein, described electric connecting point is used for being electrically connected with external component, preferably, includes but not limited to pad etc.
For example, earlier based on the electric connecting point on described disk 101 surfaces to be packaged, i.e. each pad 102, the position, described dielectric film 104 adopted carries out etching such as etching methods such as wet etching or laser ablations, to expose each pad 102, shown in Fig. 1 c; Adopt sputtering method to wait to form metal level 105 on described dielectric film 104 surfaces more subsequently, shown in Fig. 1 d; Again described metal level 105 is carried out etching subsequently, to obtain each conductive region 105 ', shown in Fig. 1 f, each conductive region 105 ' is electrically connected a pad 102.
The 3rd step: form a conductive salient point on each conductive region 105 ' surface again.
For example, shown in Fig. 1 e, adopt methods such as electroplating backflow or laser ball implanting to form a conductive salient point 106 on each conductive region 105 ' surface.
Can obtain a wafer-level package structure based on above-mentioned steps, this wafer-level package structure comprises: the surface comprises the disk to be packaged 101 of a plurality of pads 102; Be coated in the bond layer 103 on described disk 101 surfaces to be packaged; Stick to the dielectric film layer 104 on described bond layer 103 surfaces; Be formed on a plurality of conductive regions 105 ' on described dielectric film layer 104 surface, and each conductive region 105 ' is electrically connected a pad 102; And the conductive salient point 106 that is formed on each conductive region 105 ' surface.
Embodiment two:
Present embodiment based on dielectric film prepare in the wafer-level package structure reroute the layer process as follows:
The first step: according to embodiment one described step, after disk to be packaged 101 surfaces form a plurality of conductive regions 105 ', apply bonding agent 203 again at the body structure surface that forms conductive region 105 ', shown in Fig. 2 a; Again another prefabricated dielectric film 204 is placed on the body structure surface that applies bonding agent bonding agent 203 subsequently, applies certain pressure, make dielectric film 204 paste at the body structure surface that forms conductive region 105 ' by bonding agent 203, shown in Fig. 2 b.
Wherein, dielectric film 104 and dielectric film 204 material separately can include BCB or polyimides (PI) etc., also can be wherein one be BCB, another person is polyimides (PI) etc.; Preferably, comprise the structure of electronic devices and components in the one or both in described dielectric film 104 and the dielectric film 204, for example, comprise formation passive capacitive, resistance, electro-magnetic screen layer, the structure of MEMS device etc.
Second step: based on the quantity of the conductive region 105 ' of the described body structure surface that has formed conductive region 105 ', make the conductor layer that reroutes on described another dielectric film 204 surfaces, form the conductive region 205 ' of the mutual isolation of respective numbers, and the conductive region that makes the relative two sides of described another dielectric film forms correspondence and is electrically connected, just make a conductive region 205 ' connect a conductive region 105 ', shown in Fig. 2 b.Wherein, the process that forms conductive regions 105 ' among the process that forms conductive regions 205 ' on described another dielectric film 204 surfaces and the embodiment one on described dielectric film 104 surfaces is same or similar, and is contained in this by reference, no longer detailed description.
The 3rd step: form a conductive salient point 206 on each conductive region 205 ' surface again, shown in Fig. 2 c, the generation type that forms a conductive salient point 106 among the mode of this formation conductive salient point 206 and the embodiment one on each conductive region 105 ' surface is same or similar, and be contained in this by reference, no longer describe in detail.
Thus, can obtain another wafer-level package structure based on above-mentioned steps, this wafer-level package structure comprises: the surface comprises the disk to be packaged 101 of a plurality of pads 102; Be coated in the bond layer 103 on described disk 101 surfaces to be packaged; Stick to the dielectric film layer on described bond layer 103 surfaces; And a plurality of conductive regions 205 ' that are formed on described dielectric film laminar surface; And the conductive salient point 206 that is formed on each conductive region 205 ' surface; Wherein, the dielectric film layer that sticks to described bond layer 103 surfaces comprises the sandwich construction that is formed by bond layer 203, dielectric film layer 204 and the conductive region 105 ' that is electrically connected with a pad 102 respectively, makes each conductive region 205 ' can be electrically connected a pad 102 based on conductive region 105 '.
Embodiment three:
Present embodiment based on dielectric film prepare in the wafer-level package structure reroute the layer process as follows:
Earlier according to embodiment two described processes, after disk to be packaged 101 surfaces form a plurality of conductive regions 205 ', again according on the structure that forms conductive region 105 ', forming a plurality of conductive region 205 ' same or analogous steps among the embodiment two again, form a plurality of conductive regions and conductive salient point again forming on the structure of conductive region 205 ', constitute the wafer-level package structure that the dielectric film by 3 layers of individual layer piles up thus.
In addition, based on above-described embodiment, it should be appreciated by those skilled in the art that the process that forms the wafer-level package structure that the dielectric film by the individual layer more than 4 layers or 4 layers piles up at disk to be packaged 101, so be not described in detail in this.
In sum, the method for preparing the layer that reroutes in the wafer-level package structure based on dielectric film of the present invention adheres to dielectric film based on the mode of pasting in disk surfaces to be packaged, avoid having now the technical processs such as hot setting that prepare the required employing of dielectric film in disk surfaces to be packaged, can effectively reduce the stress in the disk to be packaged thus, disk warpage to be packaged is reduced; And, can also realize the high density bump interconnect; In addition, this law allow to be made dielectric multi-layer optical thin film and conductive region, makes to reroute more flexibly, can also conveniently embed passive device etc. in dielectric film.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (10)
- One kind based on dielectric film prepare in the wafer-level package structure reroute the layer method, it is characterized in that described method comprises step at least:1) prefabricated dielectric film is pasted applied the disk surfaces to be packaged of bonding agent;2) make the conductor layer that reroutes based on the quantity of the electric connecting point of described disk surfaces to be packaged on described dielectric film surface, form the conductive region of the mutual isolation of respective numbers, and make each conductive region be electrically connected an electric connecting point;Described method also comprises step:-form a conductive salient point on each conductive region surface.
- According to claim 1 based on dielectric film prepare in the wafer-level package structure reroute the layer method, it is characterized in that also comprising:3) another prefabricated dielectric film is pasted applied bonding agent and forming the body structure surface of conductive region;4) based on the quantity of the conductive region of the described body structure surface that has formed conductive region, make the conductor layer that reroutes on described another dielectric film surface, form the conductive region of the mutual isolation of respective numbers, and make the conductive region on the relative two sides of described another dielectric film form correspondence to be electrically connected.
- 3. according to claim 2ly prepare the method for the layer that reroutes in the wafer-level package structure based on dielectric film, it is characterized in that also comprising: based on established structure repeating step 3 at least one times) and 4).
- According to claim 1 to 3 each described based on dielectric film prepare in the wafer-level package structure reroute the layer method, it is characterized in that: prefabricated dielectric film comprises the dielectric film with electronic devices and components structure.
- According to claim 1 to 3 each described based on dielectric film prepare in the wafer-level package structure reroute the layer method, it is characterized in that: the material of prefabricated dielectric film comprises BCB or polyimides (PI).
- 6. wafer-level package structure is characterized in that comprising:The surface comprises at least one electric connecting point disk to be packaged;Be coated in the bond layer of described disk surfaces to be packaged;Stick to the dielectric film layer on described bond layer surface;Be formed on the conductor layer of described dielectric film laminar surface, it comprises a conductive region at least, and each conductive region is electrically connected an electric connecting point;Be formed on the conductive salient point on each conductive region surface.
- 7. wafer-level package structure according to claim 6, it is characterized in that: described dielectric film layer comprises the sandwich construction that is formed by bond layer, dielectric film layer and the conductor layer that reroutes.
- 8. according to claim 6 or 7 described wafer-level package structures, it is characterized in that: described dielectric film layer comprises the dielectric film layer with electronic devices and components structure.
- 9. according to claim 6 or 7 described wafer-level package structures, it is characterized in that: the material of dielectric film layer comprises BCB or polyimides (PI).
- 10. according to claim 6 or 7 described wafer-level package structures, it is characterized in that: the electric connecting point of band encapsulation disk surfaces is including, but not limited to pad.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011104482495A CN103187312A (en) | 2011-12-28 | 2011-12-28 | Fabrication method of rewiring layer in wafer level packaging structure and wafer level packaging structure |
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| CN2011104482495A CN103187312A (en) | 2011-12-28 | 2011-12-28 | Fabrication method of rewiring layer in wafer level packaging structure and wafer level packaging structure |
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Cited By (2)
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| CN107452638A (en) * | 2017-08-11 | 2017-12-08 | 中国科学院上海微系统与信息技术研究所 | Wafer-level package structure and preparation method thereof |
| CN107564822A (en) * | 2017-08-28 | 2018-01-09 | 华进半导体封装先导技术研发中心有限公司 | A kind of method for packing of integrated chip and the integrated chip of system in package |
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Application publication date: 20130703 |