CN103187232B - 一种减少晶片背面生成聚合物的聚焦环 - Google Patents
一种减少晶片背面生成聚合物的聚焦环 Download PDFInfo
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- CN103187232B CN103187232B CN201110448622.7A CN201110448622A CN103187232B CN 103187232 B CN103187232 B CN 103187232B CN 201110448622 A CN201110448622 A CN 201110448622A CN 103187232 B CN103187232 B CN 103187232B
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- ring
- back surface
- chip back
- focusing ring
- metal oxide
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- 229920000642 polymer Polymers 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 18
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 3
- MCVFFRWZNYZUIJ-UHFFFAOYSA-M lithium;trifluoromethanesulfonate Chemical compound [Li+].[O-]S(=O)(=O)C(F)(F)F MCVFFRWZNYZUIJ-UHFFFAOYSA-M 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000013618 particulate matter Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 7
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- -1 as quartzy Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448622.7A CN103187232B (zh) | 2011-12-28 | 2011-12-28 | 一种减少晶片背面生成聚合物的聚焦环 |
| TW101143726A TW201332013A (zh) | 2011-12-28 | 2012-11-22 | 一種減少晶片背面生成聚合物的聚焦環 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448622.7A CN103187232B (zh) | 2011-12-28 | 2011-12-28 | 一种减少晶片背面生成聚合物的聚焦环 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103187232A CN103187232A (zh) | 2013-07-03 |
| CN103187232B true CN103187232B (zh) | 2015-09-16 |
Family
ID=48678343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110448622.7A Active CN103187232B (zh) | 2011-12-28 | 2011-12-28 | 一种减少晶片背面生成聚合物的聚焦环 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103187232B (https=) |
| TW (1) | TW201332013A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023239574A1 (en) * | 2022-06-08 | 2023-12-14 | Lam Research Corporation | Chucking system with silane coupling agent |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102136790B1 (ko) * | 2013-11-15 | 2020-07-23 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치와, 이의 제조 방법 |
| CN104008946B (zh) * | 2014-06-12 | 2016-09-07 | 上海华力微电子有限公司 | 铝刻蚀工艺用聚焦环、铝刻蚀工艺 |
| CN109423606A (zh) * | 2017-08-24 | 2019-03-05 | 中微半导体设备(上海)有限公司 | 聚焦环及其耐腐蚀防护方法 |
| JP7370228B2 (ja) * | 2019-11-22 | 2023-10-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN113097038B (zh) * | 2021-02-25 | 2022-07-15 | 长江存储科技有限责任公司 | 刻蚀装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
| CN101552182A (zh) * | 2008-03-31 | 2009-10-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于半导体制造工艺中的边缘环机构 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200416801A (en) * | 2003-01-07 | 2004-09-01 | Tokyo Electron Ltd | Plasma processing apparatus and focus ring |
| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| KR20090085049A (ko) * | 2006-10-06 | 2009-08-06 | 아사히 테크 가부시끼가이샤 | 내식성 부재 및 그의 제조 방법 |
| DE202010015933U1 (de) * | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
-
2011
- 2011-12-28 CN CN201110448622.7A patent/CN103187232B/zh active Active
-
2012
- 2012-11-22 TW TW101143726A patent/TW201332013A/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
| CN101552182A (zh) * | 2008-03-31 | 2009-10-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于半导体制造工艺中的边缘环机构 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023239574A1 (en) * | 2022-06-08 | 2023-12-14 | Lam Research Corporation | Chucking system with silane coupling agent |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103187232A (zh) | 2013-07-03 |
| TW201332013A (zh) | 2013-08-01 |
| TWI488237B (https=) | 2015-06-11 |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| CP01 | Change in the name or title of a patent holder |