CN103182602A - To-be-processed object disjunction method and disjunction method for substrate provided with optical element pattern - Google Patents
To-be-processed object disjunction method and disjunction method for substrate provided with optical element pattern Download PDFInfo
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- CN103182602A CN103182602A CN2012105283116A CN201210528311A CN103182602A CN 103182602 A CN103182602 A CN 103182602A CN 2012105283116 A CN2012105283116 A CN 2012105283116A CN 201210528311 A CN201210528311 A CN 201210528311A CN 103182602 A CN103182602 A CN 103182602A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/40—Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
- H01L2924/401—LASER
- H01L2924/402—Type
- H01L2924/4025—Type being a gas
- H01L2924/40252—CO2 LASER
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Abstract
The invention relates to a to-be-processed object disjunction method and a disjunction method for substrate provided with optical element pattern. The invention provides a technique of breaking to-be-processed object made of fragile material with high precision and high efficiency. The to-be-processed object disjunction method includes the following steps: forming chalk lines on a line chalking face through emitting a first laser on the line chalking face of the to-be-processed object; and heating the to-be-processed object along the chalk line through emitting second laser along the chalk line from a side of a non-line-chalking face. In the later step, opposite scanning of the second laser is realized in a state that the line chalking surface is contacted with cooling medium, so that a drawing stress field near the chalk line and in the to-be-processed object is moved and cooled. Therefore, a crack is produced in sequence along the chalk line caused for making the chalk line in the drawing stress field, so that the to-be-processed object is cut off.
Description
Technical field
The present invention relates to a kind of by irradiating laser and the method for disjunction machined object.
Background technology
As the processing method that cuts out harder and more crisp material (fragile material) such as glass plate or sapphire substrate, known have a whole bag of tricks.For example, processing as glass plate, that is widely known by the people has a following method: the end of the material that cuts from desire with adamantine crystallization etc. is wire ground and more shallow scar (initial stage be full of cracks) is set namely carries out so-called setting-out, and the both sides of formed initial stage be full of cracks are applied power and make this initial stage be full of cracks along the thickness direction progress, thereby disjunction glass plate.
Yet, under the situation of this kind method, when carrying out the disjunction operation, produce or break to the direction of beyong contemplation etc. at minute section according to the applying direction etc. of the degree of depth of setting-out or power, can't obtain desired disjunction precision, under the poorest situation, the danger of whole material breakage is arranged also.
In addition, that is widely known by the people also has a following method: by giving the initial stage be full of cracks to the end of machined object in advance and utilize the heat scan that adds of laser from this end, thereby and make be full of cracks progress disjunction machined object (for example, with reference to patent documentation 1).
Under the situation of this kind method, if be that homogeneous and the stress field that produces are desirable stress field as the fragile material of disjunction object, the possibility that position that can control be full of cracks progress accurately or direction etc. are so just arranged, but in the reality, with regard to the aspects such as difficulty of the inhomogeneity that distributes with regard to the inhomogeneity of material or heat energy or the high-precision Position Control of hot spot, be difficult to high accuracy control be full of cracks progress.So-called high accuracy is that hypothesis is with the Position Control of the precision of μ m level herein.
And, just produce in the end of machined object that stress disperses and stress distribution becomes former thereby speech such as inhomogeneous, in the control of be full of cracks progress, need the restriction processing sequence or (for example, with reference to the patent documentations 2) such as processing of the hot spot that carries out staggering.
In addition, when the fragile material that will be arranged with unit cell pattern on the surface two-dimensionally cuts out situation into the monolithic (chip unit) of per unit pattern etc., carry out under the situation about cutting out on 2 orthogonal directions being made as to cut off by laser, after a certain direction cuts out, again in the direction of this direction quadrature on cut out, but under the situation as a large amount of chip manufacture, the adding method of initial stage be full of cracks etc. becomes more numerous and diverse.
Combination as above method, also known have a following method: utilizing diamond or Vickers pressure head etc. after the end of hard brittle material substrate (for example glass, silicon, pottery, sapphire etc.) arranges small scar (initial stage be full of cracks), at substrate back side configuration laser absorption material, and the substrate back utilization carried out local heat through the irradiation of in focus laser, thereby by concentrated the making be full of cracks progress disjunction glass (for example, with reference to patent documentation 3) of consequent stress.
Perhaps, also known have a following method: in advance on the surface of machined object mechanically or by the irradiation of laser and after applying the wire processing trace that is called setting-out or line, utilize the irradiation heating of laser along this kind processing trace, make progress and produce from the slight crack of this processing trace, disjunction machined object (for example, with reference to patent documentation 4 and patent documentation 5) thus.
In addition, in patent documentation 3, also disclosing has the form of carrying out disjunction from the surface irradiation laser of setting-out opposition side.
And then also known have a following method: by dry-etching the concavo-convex luminous efficiency (for example, with reference to patent documentation 6) that improves is set by the side at light-emitting component.
[background technology document]
[patent documentation]
The special fair 3-13040 communique of [patent documentation 1] Japan Patent
[patent documentation 2] Japanese patent laid-open 9-45636 communique
[patent documentation 3] Japan Patent spy opens the 2008-62547 communique
No. 2712723 communique of [patent documentation 4] Japan Patent
No. 3036906 communique of [patent documentation 5] Japan Patent
No. 3852000 communique of [patent documentation 6] Japan Patent
Summary of the invention
[inventing problem to be solved]
Under the situation of the method that discloses in patent documentation 3, direct-fired by laser is the laser absorption material after all, and the hard brittle material substrate is just by conducting from the heat of laser absorption material and being heated indirectly.Therefore, be difficult to guarantee heat conducting homogeneity, and tensile stress may not act on the direction of intention effect.In addition, and cut off equally as the laser in the past that discloses in the patent documentation 1, be difficult to control the progress direction of be full of cracks.Therefore, be difficult to carry out high-precision disjunction by this kind method.
In addition, what disclose in patent documentation 4 and the patent documentation 5 only is by along mechanically or utilize processing trace irradiating laser that laser forms and the basic principle of disjunction machined object at most, about carrying out the method for this kind disjunction expeditiously, do not make any announcement and hint.
In addition, in the patent documentation 6, about improving light extraction efficiency and disclose by the side of the semiconductor film of light-emitting component being implemented concavo-convex processing, but about not disclosing for the processing as the sapphire wafer of this base material.If utilize in the patent documentation 6 method that discloses that sapphire substrate is implemented concavo-convex processing, need to carry out again resist-coating so and handle, and etching itself needs the time, thereby have low this problem of productivity ratio.
The present invention finishes in view of described problem, but purpose be to provide a kind of high accuracy and expeditiously disjunction comprise the technology of the machined object of fragile material.In addition, it is under the situation of machined object that a kind of substrate that ought form the tool pattern of light-emitting component pattern on the surface two-dimensionally particularly is provided, and except these high accuracy and high efficiency processing, also realizes improving the technology of emitting component simultaneously.
[technological means of dealing with problems]
For solving described problem, the invention of technical scheme 1 is characterised in that: it is the method for disjunction machined object; And comprise: the line procedure of processing, by making the 1st laser from the 1st outgoing source outgoing, and the line face of described machined object is shone described the 1st laser, and form line at described line face; And the irradiation heating steps, by making the 2nd laser from the 2nd outgoing source outgoing, and be that non-line face side is shone described the 2nd laser along described line from the opposing face of described line face, and described machined object is heated along described line; And in described irradiation heating steps, by so that the mode that described line face contacts with cooling medium makes described the 2nd laser relatively scan along described line under the state on the described cooling medium described machined object mounting, be that near the described line trending extensional tectonic stress field moves and cools off and make the inside that is formed on the described machined object that comprises described line face to the irradiation of described non-line face by described the 2nd laser, thus, by the progress that is positioned at the slight crack from described line to described non-line face that described trending extensional tectonic stress field produces because of described line is produced in regular turn along described line, thereby with described machined object disjunction.
The invention of technical scheme 2 is the method for dividing as technical scheme 1, it is characterized in that: in described irradiation heating steps, utilizing the guiding mechanism adjustment after the range of exposures of described the 2nd laser of described the 2nd outgoing source outgoing, described the 2nd laser is exposed to described non-line face.
The invention of technical scheme 3 is as the method for dividing of technical scheme 1 or technical scheme 2, it is characterized in that: described the 2nd laser is CO
2Laser.
The invention of technical scheme 4 is the method for dividing as technical scheme 3, it is characterized in that: in described irradiation heating steps, shine described the 2nd laser with the impulse hunting pattern, on the branch section of the monolithic that the described machined object by disjunction forms, produce the fluctuating that the total reflectivity with cycle corresponding with the impulse hunting cycle reduces usefulness.
The invention of technical scheme 5 is as the method for dividing of technical scheme 1 or technical scheme 2, it is characterized in that: described the 1st laser is 3 times of higher hamonic waves of YAG (Yttrium Aluminum Garnet, yttrium-aluminium-garnet) laser.
The invention of technical scheme 6 is as the method for dividing of technical scheme 1 or technical scheme 2, it is characterized in that: more comprise the registration process step that the posture in the horizontal plane of described machined object is revised; And for the described machined object that has carried out described registration process step, carry out described line procedure of processing and described irradiation heating steps.
The invention of technical scheme 7 is the method for dividing as technical scheme 1 or technical scheme 2, it is characterized in that: in described line procedure of processing, produce fusion and solidify again by the illuminated position at described the 1st laser described illuminated position is made as affected zone, and form described line.
The invention of technical scheme 8 is the method for dividing as technical scheme 1 or technical scheme 2, it is characterized in that: in described line procedure of processing, produce by the illuminated position at described the 1st laser and to ablate (ablation) and form slot part in described illuminated position, and form described line.
The invention of technical scheme 9 is as the method for dividing of technical scheme 1 or technical scheme 2, it is characterized in that: in described line procedure of processing, form a plurality of line respectively on the 1st orthogonal direction and the 2nd direction; And in described irradiation heating steps, carry out heating along the irradiation in the upwardly extending described line of described the 2nd side along after the irradiation of the upwardly extending described line of described the 1st side heating carrying out from described non-line face side.
The invention of technical scheme 10 is as the method for dividing of technical scheme 9, it is characterized in that: in described irradiation heating steps, the illumination beam diameter of described the 2nd laser is made as below the spacing when forming described line.
The invention of technical scheme 11 is characterised in that: it is the method for the substrate of the disjunction tool optical element pattern that forming the optical element pattern on the surface two-dimensionally; And comprise: the line procedure of processing, by making the 1st laser from the 1st outgoing source outgoing, and the line face of the substrate of described tool optical element pattern shone described the 1st laser, and form line at described line face; And the irradiation heating steps, make as CO
2The 2nd laser of laser is from the 2nd outgoing source outgoing, and shines described the 2nd laser from described line face side along described line, and the substrate of described tool optical element pattern is heated along described line; And in described irradiation heating steps, by make described the 2nd laser along described line relatively scan the irradiation that makes on the substrate of described tool optical element pattern by described the 2nd laser be formed on the irradiation heating region around trending extensional tectonic stress field move, thus, by the progress that is positioned at the slight crack from described line to described non-line face that described trending extensional tectonic stress field produces because of described line is produced in regular turn along described line, and the substrate of the described tool optical element of disjunction pattern, and by making described the 2nd laser with the outgoing of impulse hunting pattern, and on the branch section of described machined object and the optical element monolithic that forms by disjunction, produce the fluctuating that the total reflectivity with cycle corresponding with the impulse hunting cycle reduces usefulness.
[effect of invention]
According to the invention of technical scheme 1 to technical scheme 11, by shining the 2nd laser in the line of the predetermined disjunction position of machined object and heat machined object along being pre-formed by irradiation the 1st laser, and make tensile stress act on line, thereby the progress from line to the slight crack of non-line face is produced in regular turn, thus disjunction machined object accurately along the bearing of trend of line.And, by the irradiation that non-line face is carried out the 2nd laser the progress of slight crack is produced more expeditiously, therefore can carry out the disjunction with higher precision expeditiously.
Particularly according to the invention of technical scheme 4 and technical scheme 11, can on the branch section of disjunction object, on purpose produce fluctuating.Thus, for example, when forming LED (Light Emitting Diode two-dimensionally on the surface, light emitting diode) sapphire substrate of pattern is that the LED manufacturing is the disjunction object with substrate, and as this substrate-cutting is become under the situation of monolithic of led chip unit, can be suppressed at the total reflection on the branch section of led chip, thereby improve the luminous efficiency of led chip.
Description of drawings
Fig. 1 is the figure that schematically shows disjunction processing situation midway.
Fig. 2 is to use CO
2The SEM picture of laser branch section during with laser LBh and disjunction sapphire substrate as heating.
Fig. 3 (a) and (b) be illustrated under the comparatively smooth situation of branch section with the branch section that exists at tabular surface under the situation about rising and falling in the different figure of direction of advance of light.
Fig. 4 is the figure that roughly represents the formation of break-up device 100.
Fig. 5 is the figure that the detailed formation of laser optical system 20 is used in the expression line.
Fig. 6 is the figure that the detailed formation of laser optical system 30 is used in the expression heating.
Fig. 7 schematically shows the figure of form that scans the non-line face W2 of machined object W by heating with laser LBh.
Fig. 8 schematically shows the figure of form that scans the non-line face W2 of machined object W by heating with laser LBh.
Fig. 9 is the figure that the summary of expression break-up device 200 constitutes.
Figure 10 is illustrated in in the formation of line face W1 irradiation heating with laser LBh the ideograph of the situation of cooling trending extensional tectonic stress field SF2.
Figure 11 is illustrated in in the formation of line face W1 irradiation heating with laser LBh the ideograph of the situation of cooling trending extensional tectonic stress field SF2.
Figure 12 is the figure that roughly is illustrated in an example of the formation of the injection of realization refrigerating gas CG in the break-up device 100.
Figure 13 is the figure that roughly is illustrated in an example of the situation that the formation of cooling off trending extensional tectonic stress field SF2 is set in the break-up device 200.
Figure 14 is that expression is to the figure of non-line face W2 irradiation heating with another form of laser LBh.
[explanation of symbol]
10 platform part
11 XY platforms
12 processing platforms
13 cooling bodies
20 line laser optical systems
21 laser oscillators
The 21a shutter
22 attenuators
23 object lens
24 mirrors
30 heating laser optical systems
31 laser oscillators
The 31a shutter
32 attenuators
33 light beam guiding mechanisms
34 object lens
35 mirrors
36 nozzles
37 refrigerating gas supply sources
38 supply pipes
40 optical systems
50 control systems
60 reversing devices
61 chucks
62 lifting units
63 counter-rotating portions
100 break-up devices
200 break-up devices
The CG refrigerating gas
The CR slight crack
L0 is scheduled to the disjunction position
LBh heating laser
LBs line laser
SF1 compression stress field
The SF2 trending extensional tectonic stress field
The SL line
The TS tensile stress
The W machined object
W1 (machined object) line face
The non-line face of W2 (machined object)
The specific embodiment
The basic principle of＜processing 〉
At first, the basic principle for the processing (disjunction processing) of present embodiment describes.The disjunction carried out in the present embodiment processing is roughly as follows: by after the predetermined disjunction position of machined object (disjunction object) W being shone the 1st laser (line laser) and being formed the SL that rules, heat (LASER HEATING) and near this line SL, produce stress field by the irradiation that utilizes the 2nd laser (heating laser), thus, by making be full of cracks (slight crack) begin progress from the line SL as initial stage be full of cracks, and the disjunction machined object.
As machined object W, what for example meet has: fragile material such as glass plate or sapphire substrate or on the surface of the substrate that comprises these fragile materials by thin layer etc. and form substrate that unit cell pattern forms (below, the substrate of tool pattern) etc. two-dimensionally.
Fig. 1 is the figure that is shown schematically in the disjunction processing situation midway of carrying out in the present embodiment.More specifically, Fig. 1 is that expression is by heating the situation of carrying out LASER HEATING with laser LBh along the line SL irradiation that is pre-formed on machined object W.
In addition, in the following description, face or the predetermined face that forms line SL that is forming the SL that rules among the machined object W is called line face W1, the opposing face of this line face W1 is called non-line face W2.In addition, in Fig. 1, expression is moved the situation that scans line face W1 by making heating (also can be the bearing of trend of line SL certainly) with laser LBh in the scanning direction of being represented by arrow A R1, but also can replace this situation and be following form: make heating shine a certain irradiation position regularly with laser LBh, on the other hand, by not shown mobile means machined object W is moved, utilize heating to use laser LBh realization to the relative scanning of arrow A R1 direction thus.
If irradiation heating laser LBh, the heating among the line face W1 of machined object W is heated with the irradiation area of laser LBh and expands so, as shown in Figure 1, becomes compression stress field SF1.On the other hand, the outer regions of this compression stress field SF1 is shunk, and becomes trending extensional tectonic stress field SF2.If line SL is included among this trending extensional tectonic stress field SF2, in machined object W, tensile stress TS plays a role in the side of this line SL so.The predetermined disjunction position L0 progress of slight crack CR from line SL to non-line face W2 side by the effect of this kind tensile stress TS.And, as mentioned above, relatively scan along line SL owing to heat with laser LBh, thereby trending extensional tectonic stress field SF2 also moves along line SL thereupon.So slight crack CR moves with the scanning direction of laser LBh along the bearing of trend of line SL, i.e. heating to the position of non-line face W2 side progress.Therefore, if from the end of the line SL of the predetermined disjunction position that is arranged on line face W1 side to other end irradiation heating laser LBh, so can be in the whole formation position of ruling SL, produce slight crack CR in regular turn to the progress of predetermined disjunction position L0, thereby, as a result of, but disjunction machined object W.This is the basic principle of the disjunction processing of present embodiment.
Under the situation with this kind form disjunction machined object W, after locating machined object W exactly, the line SL that the ad-hoc location that is formed on accurately on the line face W1 is formed is made as the initial stage be full of cracks, and slight crack CR is made progress to non-line face W2 side.Usually, compare with the length of line SL, the thickness of machined object W is in the extreme little, in addition, because even relatively with the trending extensional tectonic stress field SF2 that laser LBh forms by heating, thereby the difficult skew that produces the disjunction position.That is to say, in the present embodiment, can carry out the disjunction of precision excellence.As a result of, can realize disjunction with the precision of μ m level.
In addition, when the sapphire substrate that will form the LED pattern on the surface two-dimensionally is that LED is when making substrate-cutting with tool patterns such as substrates and being the situation etc. of monolithic (chip unit) of per unit pattern, be under the cancellate situation being scheduled to the disjunction set positions, after forming a plurality of line SL on the 1st orthogonal direction and the 2nd direction respectively in regular turn, utilize the heating heating of laser LBh in regular turn for all directions.In such cases, if carry out along a certain LASER HEATING in the upwardly extending line of the 1st side SL (the 1st line) with laser LBh by heating, so with the grid point of another line SL (the 2nd line) of its quadrature near, slight crack CR is also partly slightly to non-line face W2 progress in the 2nd line of extending along the 2nd direction.Yet, in such cases, by after carry out also can carrying out the disjunction of no problem on the precision along the LASER HEATING of the 2nd line.
For line laser, as long as use according to the suitable pulse laser of selections such as material of machined object W.For example, if at sapphire substrate or to use the substrate of the tool pattern that sapphire substrate makes be that a so preferred example was to use 3 times of higher hamonic waves (wavelength 355nm) of YAG laser under LED made with the situation of substrate as machined object W.In addition, in order to improve disjunction precision and the certainty in predetermined disjunction position, and comparatively ideal be line SL to be formed thin as much as possible, therefore line is with shining in the range of exposures (illumination beam diameter) of laser about several μ m～tens μ m.In addition, with regard to the viewpoint of working (machining) efficiency (energy utilization efficiency), line is illuminated near the mode of (scope till about from line face W1 to tens of μ m) focusing line face W1 of machined object W or inner line face W1 with laser.In addition, in the present embodiment, so-called illumination beam diameter refers to that the Energy distribution at the section of the laser beam of supposing to shine is under the situation of Gaussian-shaped, the 1/e of the peak centered by the energy value
2The diameter in above zone.
In addition, about line SL, both can be the form that the slot part that will be viewed as triangle or wedge shape with the illuminated position of laser by the section that the material evaporation is formed in line is made as line SL, also can be with in this illuminated position by make the material fusion, the section that forms of curing (the melting upgrading) affected zone that is viewed as triangle or wedge shape is made as the form of the SL that rules again.According to which form of employing, and determine the line illuminate condition (pulse width, repetition rate, peak power density, sweep speed etc.) of laser.In addition, among Fig. 1 illustration forming the situation of the SL that rules continuously, but the formation form of line SL is not limited to this.For example, also can be the form that is a wire or dotted line shape ground formation line SL along predetermined disjunction position.
On the other hand, use laser LBh as heating, preferably use the CO as long wavelength laser
2Laser (wavelength 9.4 μ m～10.6 μ m).CO
2Laser is owing to positively be absorbed at glass or sapphire surface, thereby can positively produce from the progress of the slight crack CR of line SL.In addition, different with laser with this line of shining with being processed as purpose of machined object of formation of line SL, heating is to form the laser that trending extensional tectonic stress field SF2 this purpose is shone around the compression stress field SF1 that is formed on heating region by the heating machined object with laser LBh.Therefore, machined object is destroyed or rotten or trending extensional tectonic stress field SF2 is formed when wide as much as possible, heating gets final product greatly with laser than line with the range of exposures of laser LBh.For example, be under the situation of 150 μ m at the thickness of machined object, as long as be about 100 μ m～1000 μ m.
Yet, as from the substrate of tool pattern, cut out under the situation of chip of rectangular shape, it is identical or below it that heating is set at planar dimension (roughly equal with the spacing of predetermined disjunction position) with chip with the illumination beam diameter of laser LBh.Under the situation that makes illumination beam diameter greater than the planar dimension of chip, generation can't be carried out disjunction well thereby can't obtain the situation of the chip of given shape, so not good enough.
＜the heating oscillation mode of laser and the relation of the shape of dividing section 〉
For example, using CO
2Laser can be with continuous oscillation mode and these two kinds of oscillation mode irradiation heating laser LBh of impulse hunting pattern as under the situation of heating with laser LBh.And according to this oscillation mode, the shape that confirms the branch section of machined object W produces different.Particularly, under the situation of continuous oscillation mode, the branch section that forms by the slight crack progress becomes very smooth tabular surface.On the other hand, under the situation of impulse hunting pattern, form the periodic fluctuating (concavo-convex) corresponding with the impulse hunting cycle at minute section.Fig. 2 is to use CO
2The SEM (Scanning Electron Microscope, SEM) of laser branch section during with laser LBh and disjunction sapphire substrate as heating as.Among the figure, " Fracture surface (plane of fracture) " is the branch section, and Groove (groove) is line, and " Feeddirection (direction of feed) " is the moving direction (rightabout of the scanning direction of laser) of sapphire substrate.Under situation shown in Figure 2, though divide section transparent, forming to rise and fall with the spacing of tens of μ m and forming.Usually, preferably the branch section of machined object W is tabular surface, thereby in most cases, heating is carried out with continuous oscillation mode with the irradiation of laser LBh.
With respect to this, also having preferably on minute section on purpose, (energetically) produces situation about rising and falling.For example, the sapphire substrate (wafer) that is forming LED (light-emitting component) pattern on the surface two-dimensionally is that LED makes with substrate is machined object W, and is that the situation of the monolithic of led chip unit just meets this situation with this substrate-cutting.Fig. 3 be illustrated in the branch section be under the smooth situation with the branch section that exists at tabular surface under the situation about rising and falling in the different figure of direction of advance of light.
Usually, light-emitting component (led chip) is required just not extract to the outside luminous not being blocked as much as possible that the light emitting element configuration that is arranged on the substrate partly produces.Because the part of this kind light also is incident to substrate portion, thereby for the luminous efficiency (extraction efficiency of light) of the essence that improves light-emitting component, and need the light that send be seen through as much as possible in substrate portion.On the other hand, under the situation of the light medium bigger from refractive index, advancing in the less medium to refractive index, have with respect to its interface (plane of incidence) with critical angle θ
cThe light of above incident is by this optic restriction (Snell's law) of total reflection.For example, under the situation that light advances to air from sapphire, θ
c=34.4 °.
If the branch section is tabular surface, so shown in Fig. 3 (a), in the light that light-emitting element part produces with critical angle θ
cThe light that above incidence angle is incident to the branch section all is reflected.In addition, in theory, the direct of travel according to after producing continues to suffer total reflection, as a result of, also can produce the light that becomes the state that is enclosed in led chip inside.As mentioned above, if under the situation that light advances to air from sapphire, the light that is incident to the branch section with the incidence angle below 55.6 ° more than 34.4 ° just meets this situation so.
With respect to this, exist under the situation about rising and falling at minute section, shown in Fig. 3 (b), even from the light of the direction incident identical with the situation of Fig. 3 (a), also can be according to its incoming position and incidence angle less than Fig. 3 (a), thereby produce and see through the composition that divides section.In addition, even reflected at a certain minute section, the probability that sees through at different branch sections also can uprise.That is to say, can reduce the light that is incident to the branch section this minute section by the ratio of total reflection (total reflectivity).Therefore, existing under the situation about rising and falling at minute section, is the situation of tabular surface compared to minute section, realizes being easy to extract the state of the light that produces.In addition, in the light-emitting component of reality, the substrate of led chip may not directly expose externally, the situation such as sealing by resin is arranged, even but in such cases, obtain described effect similarly.
In view of more than, be that LED makes and use substrate at machined object W, and be under the situation of led chip unit with this substrate-cutting, by carrying out disjunction with laser LBh in minute form of section generation fluctuating with impulse hunting pattern irradiation heating.Thus, can obtain the higher led chip of light extraction efficiency.This kind method forms in the time of can be with the disjunction of machined object W and rises and falls, thereby forms concavo-convex method with the use dry-etching of announcement for example as in the patent documentation 6 and compare, and is high efficiency and the higher method of productivity ratio.
＜break-up device 〉
Secondly, based on described process principle, the break-up device of the disjunction of carrying out machined object is described.Fig. 4 is the figure that roughly represents the formation of break-up device 100.
As shown in Figure 4, break-up device 100 mainly comprise platform part 10, line with laser optical system 20, heating with laser optical system 30, reach the position and read optical system 40.In addition, break-up device 100 for example comprises not shown CPU (Central Processing Unit, central processing unit), ROM (Read Only Memory, read-only storage), RAM (Random Access Memory, random access memory) etc., and comprise control system 50, by line with laser optical system 20, heating with laser optical system 30, reach the position and read the various signals of giving and accepting between the optical system 40 etc., and control the action of each inscape.In addition, control system 50 both can be with other inscapes incorporates form in the body of break-up device 100 into as one, also can be for example to comprise personal computer etc., and the form that arranges dividually with the body of break-up device 100.
Processing is in order to the fixing position of machined object W of mounting thereon with platform 12.Processing comprises not shown adsorbing mechanism with platform 12, and constitutes as follows: by making the adsorbing mechanism start based on the absorption control signal sg3 from control system 50, and machined object W is absorbed and fixed at the upper surface 12a of processing usefulness platform 12.In addition, processing comprises not shown rotary drive mechanism with platform 12, and also can be based on being rotated action from the rotation control signal sg4 of control system 50 in horizontal plane.
In addition, though in Fig. 4, omit diagram, also can be following form: when using platform 12 fixedly to processing, at non-line face W2 side (mounting surface side) the attaching tackness film of machined object W, and machined object W and this film is together fixing.
Laser is used in the line that is provided by control system 50 to machined object W irradiation line with laser control signal sg5 position is provided with laser optical system 20 in line.
Fig. 5 is the figure that the detailed formation of laser optical system 20 is used in the expression line.As shown in Figure 5, line mainly comprises with laser optical system 20: laser oscillator 21 is as the light source (outgoing source) of line with laser LBs; Attenuator 22 is in order to carry out using from the line of laser oscillator 21 outgoing the light quantity adjustment of laser LBs; And object lens 23, in order to rule with the focus adjustment of laser LBs.In addition, as mentioned above, use laser LBs as line, use the pulse laser corresponding with the material of machined object W etc., thereby laser oscillator 21 needs only and selects with the kind of laser LBs according to employed line.
In addition, in ruling with laser optical system 20, also comprise mirror 24, rule by reflection and use the optical path direction of laser LBs with laser LBs and suitable transformation line.In addition, though in Fig. 5 illustration only comprise the situation of 1 mirror 24, but the quantity of mirror 24 is not limited to this, according to line with laser optical system 20 inner or and then the layout of break-up device 100 inside on requirement and other reasons, also can be more mirror 24 is set, and suitably set the form that the light path of laser LBs is used in line.
More specifically, in laser oscillator 21, be provided with in order to switch the shutter 21a that outgoing/non-outgoing of laser LBs is used in line.The switch motion of shutter 21a is based on as line and controls with a kind of ON (opening)/OFF (pass) control signal sg5a of laser control signal sg5.In addition, the line in the attenuator 22 is based on the adjustment of the light quantity of laser LBs and controls with a kind of power output control signal sg5b of laser control signal sg5 as line.
Use in the laser optical system 20 in line, with the mode of laser LBs with near (scope till about from line face W1 to tens of μ m) focusing line face W1 of machined object W or inner line face W1, and become the allocation position that mode about several μ m～tens μ m is adjusted object lens 23 with illumination beam diameter from laser oscillator 21 outgoing and the line of being adjusted light quantities by attenuator 22.Thus, form good line SL.
Laser is used in the heating that is provided by control system 50 to machined object W irradiation heating with laser control signal sg6 position is provided with laser optical system 30 in heating.
Fig. 6 is the figure that the detailed formation of laser optical system 30 is used in the expression heating.As shown in Figure 6, heating mainly comprises with laser optical system 30: laser oscillator 31 is as the light source (outgoing source) of heating with laser LBh; Attenuator 32 is in order to carry out using from the heating of laser oscillator 31 outgoing the light quantity adjustment of laser LBh; Light beam guiding mechanism 33 is in order to adjust the range of exposures of the heating of machined object W being used laser LBh; And object lens 34, in order to heat the focus adjustment with laser LBh.As mentioned above, use CO as heating with laser LBh
2Laser, thereby laser oscillator 31 is CO
2The oscillator that laser is used.
In addition, in heating with laser optical system 30, also comprise mirror 35, heat the direction of using the light path of laser LBh with laser LBh and suitable transformation heating by reflection.In addition, though in Fig. 6 illustration only comprise the situation of 1 mirror 35, but the quantity of mirror 35 is not limited to this, according to heating with laser optical system 30 inner or and then the layout of break-up device 100 inside on requirement and other reasons, also can be more mirror 35 is set, and suitably set the form that the light path of laser LBh is used in heating.
More specifically, in laser oscillator 31, be provided with in order to switch the shutter 31a that outgoing/non-outgoing of laser LBh is used in heating.The switch motion of shutter 31a is based on as heating and controls with a kind of ON/OFF control signal sg6a of laser control signal sg6.In addition, the heating in the attenuator 32 is based on the adjustment of the light quantity of laser LBh and controls with a kind of power output control signal sg6b of laser control signal sg6 as heating.
In addition, for adjust from laser oscillator 31 point-blank the heating of outgoing comprise light beam guiding mechanism 33 with the range of exposures of laser LBh.Light beam guiding mechanism 33 for example can realize by the various lens of appropriate combination, and can be by adjusting the position of these lens, and to machined object W with suitable range of exposures irradiation heating laser LBh.In addition, in Fig. 6, illustration by utilizing the adjustment of light beam guiding mechanism 33, and heating exposes to the situation of machined object W with the range of exposures of the beam diameter greater than from laser oscillator 31 outgoing the time with laser LBh.
The position is read optical system 40 and is utilized not shown CCD (Charge Coupled Device, charge-coupled image sensor) video camera etc. is made a video recording with the machined object W of platform 12 to being absorbed and fixed at processing, and the data of the photographed images that obtains are offered control system 50 as image information signal sg7.Control system 50 is carried out the setting of the moving range of XY platform 11 or the irradiation position of line usefulness laser LBs or heating usefulness laser LBh etc. based on the image information signal sg7 that obtains.
In having the break-up device 100 that as above constitutes, by XY platform 11 being moved machined object W being absorbed and fixed under the state of processing with platform 12, and can with machined object W with respect to line with laser optical system 20, heat with laser optical system 30, reach the position and read each person of optical system 40 and dispose from the below subtend.In addition, in such cases, machined object W is fixed on processing with on the platform 12 in the mode that line face W1 becomes upper surface (non-mounting surface).
And, by make machined object W and line with the state of laser optical system 20 subtend configurations under from line with the 20 couples of machined object W of laser optical system irradiation line with laser LBs and XY platform 11 is moved, and the relative scanning of laser LBs is used in realization for the line of machined object W.Relatively scan along the predetermined disjunction position of hypothesis in advance of line face W1 with laser LBs by making to rule, and can form line SL.
Similarly, by make machined object W and heating with the state of laser optical system 30 subtends configurations under from heating with 30 pairs of machined object W irradiations of laser optical system heating with laser LBh and XY platform 11 is moved, and the relative scanning of laser LBh is used in realization for the heating of machined object W.By make heating with laser LBh along relatively scanning with the line SL that the irradiation of laser LBs forms by line, and slight crack CR is made progress to the predetermined disjunction position of the non-line face W2 of machined object W from the SL that rules, thus, but disjunction machined object W.
In addition, in break-up device 100, can utilize the position to read the shooting of the machined object W of optical system 40 in that machined object W and position are read under the state of optical system 40 subtends configurations, and based on the photographed images data that obtain, and revise the alignment actions of the inclination (posture) in the horizontal plane of machined object W.Particularly, control system 50 based on the picture material of these photographed images data (for example, the allocation position of alignment mark or the allocation position of repeat patterns etc.) and inclination in the horizontal plane of specific machined object W (from the inclination of the moving direction of XY platform 11), and to processing provide rotation control signal sg4 with platform 12, make this processing with platform 12 rotations, to cancel this kind inclination.As the main method of the inclination in the horizontal plane of specific machined object W, can use known methods such as pattern matching method.
Under the situation of common disjunction processing, the mode that becomes upper surface (non-mounting surface) with line face W1 machined object W is fixed on utilize the position to read the shooting and subsequent registration process of optical system 40 under the state of processing with platform 12 after, utilize the line formation of the line SL of laser optical system 20, and then, by using laser LBh and disjunction machined object W in heating with irradiation heating in the laser optical system 30.
＜to non-line face irradiation heating laser 〉
Below, the form of handling for the various disjunctions of having used described principle describes in regular turn.Fig. 7 and Fig. 8 schematically show the figure of form that scans the non-line face W2 of machined object W by heating with laser LBh.Fig. 7 is and the cutaway view of the vertical machined object W of bearing of trend of line SL that Fig. 8 is the cutaway view along the machined object W of line SL.
Under Fig. 7 and situation shown in Figure 8, different with the situation of Fig. 1, the line face W1 mounting that is being pre-formed the SL that rules in processing with platform 12, and to the predetermined disjunction position L0 irradiation heating laser LBh as the non-line face W2 of non-mounting surface.If use laser LBh with this kind form irradiation heating, become compression stress field SF1 near the irradiation position of the heating of so non-line face W2 with laser LBh, the below that also comprises compression stress field SF1 around it becomes trending extensional tectonic stress field SF2.In addition, under situation shown in Figure 7, illustration line SL situation about forming as slot part, but the formation form of line SL is not limited to this (Fig. 7, Figure 14 are too).
More specifically, if use laser LBh with form irradiation heating shown in Figure 7, so not only also form trending extensional tectonic stress field SF2 at non-line face W2 but also in the inside of machined object W.Therefore, tensile stress TS acts on the fore-end of the line SL of the inside that is positioned at machined object W.Its result, slight crack CR predetermined disjunction position L0 progress from line SL to its top.Because heating is scanned by the scanning direction that arrow A R1 represents in Fig. 8 with laser LBh, thereby also move thereupon at the progress position of slight crack CR.As a result of, similarly realize the disjunction of substrate with the situation of Fig. 1.
In addition, if in more detail, the distribution itself on the space of the stress field that forms with laser LBh by heating is not only identical but also identical with the situation of Fig. 7 and Fig. 8 with the situation of Fig. 1 so.Under the situation of Fig. 1, W1 is made as the plane of illumination that laser LBh is used in heating with the line face, the main utilization as the stress distribution in this line face W1 of horizontal plane makes slight crack CR progress, with respect to this, under the situation of Fig. 7 and Fig. 8, mainly utilize the stress distribution on the thickness direction (profile direction) of machined object W to make slight crack CR progress, both differences in this regard.
Fig. 9 is the figure that the expression realization as above uses the summary of the break-up device 200 of laser LBh to constitute for non-line face W2 irradiation heating.In addition, in Fig. 9, for Fig. 4 to the identical symbol of the identical inscape note of break-up device shown in Figure 6 100.In addition, though omit diagram among Fig. 9, break-up device 200 similarly comprises control system 50 with break-up device 100.
Has the formation for break-up device 100 additional reversing devices 60 on break-up device 200 summarys.Reversing device 60, and comprises as by free to advance or retreat as shown in the arrow A R3 with respect to machined object W: chuck 61, from side clamping machined object W; Lifting unit 62, make the chuck 61 of state that clamping machined object W shown in arrow A R4 as lifting on vertical; And counter-rotating portion 63, keep its clamp position ground around with 180 ° of graphic vertical axle counter-rotatings machined object W table turning in being changeed by the chuck 61 that makes clamping the state of machined object W.Reversing device 60 is according to moving from the control signal of control system 50.
In the break-up device 200 that comprises this kind reversing device 60, machined object W is fixed on processing with under the state of platform 12 in the mode that becomes upper surface (non-mounting surface) with line face W1, with break-up device 100 similarly, utilize the position to read the shooting of optical system 40 and subsequent registration process and line with the formation of the line SL in the laser optical system 20.If finish the formation of line SL, the processing that fixing machined object W is formed is moved to the below of reversing device 60 with platform 12.
If machined object W be positioned at reversing device 60 under, processing fixedly is disengaged with the attraction of the machined object in the platform 12 so, and by chuck 61 clamping machined object W.The chuck 61 that machined object W in clamping promotes upward by lifting unit 62.Then, after processing was kept out of the way under the reversing device 60 for the time being with platform 12, counter-rotating portion 63 reversed machined object W.If finish this kind counter-rotating, processing is disposed to the below of reversing device 60 again with platform 12 so.And, by lifting unit 62 chuck 61 is descended, and machined object W places processing platform 12 in the state download that non-line face W2 becomes upper surface, and be adsorbed fixing again.
Thereafter, after utilizing the position to read the shooting and registration process of optical system 40 again, for handling with the disjunction in the laser optical system 30 in heating.
In addition, also can be following form: be that upper surface is fixed on processing with before the platform 12 with non-line face W2 at the machined object W that will reverse by reversing device 60, to paste the ring mounting of tool tackness film in advance uses on the platform 12 in processing, and in the configuration of this film through the machined object W of processing counter-rotating and be attached on this film, and machined object W is fixed in the lump with this film.
The cooling of＜trending extensional tectonic stress field 〉
As the method that the progress that makes the slight crack CR among the trending extensional tectonic stress field SF2 more effectively produces, the method for cooling trending extensional tectonic stress field SF2 is arranged.
Figure 10 and Figure 11 are illustrated in in the formation of line face W1 irradiation heating with laser LBh the ideograph of the situation of cooling trending extensional tectonic stress field SF2.Figure 10 is and the cutaway view of the vertical machined object W of bearing of trend of line SL that Figure 11 is the upper surface figure of machined object W.
In Figure 10 and Figure 11, when the edge is by the scanning of the scanning direction shown in arrow A R1 line face W1 using laser LBh by heating, for the part at the rear, scanning direction among the formed trending extensional tectonic stress field SF2, spray refrigerating gas CG (cooling gas).
If cool off with this kind form, the position that is cooled of trending extensional tectonic stress field SF2 becomes higher with the temperature difference of the compression stress field S F1 that heats with the irradiation of laser LBh by heating so, and the tensile stress among the trending extensional tectonic stress field SF2 becomes stronger.Thus, improve the certainty of the progress of slight crack CR.As a result of, disjunction machined object W more accurately.
In addition, as refrigerating gas CG, for example as long as the gas that suitably uses inert gas etc. and machined object W not to react.
Figure 12 roughly is illustrated in the figure of an example of formation that Fig. 4 realizes the injection of refrigerating gas CG to the break-up device 100 shown in Figure 6.That is to say, under situation shown in Figure 12, set up in order to heating is sprayed the nozzle 36 of refrigerating gas CG with laser optical system 30, and can make the refrigerating gas CG that supplies with by supply pipe 38 from refrigerating gas supply source 37 use the scanning (relative scanning) of laser LBh synchronously to spray from nozzle 36 to trending extensional tectonic stress field SF2 with heating.
Yet the form of cooling trending extensional tectonic stress field SF2 is not limited to utilize the as above form of the injection of refrigerating gas CG, as long as do not have and the reactivity of machined object or the problems such as corrosion of break-up device, so also can utilize the cooling of liquid.That is to say, also can utilize the cooling of the fluid of air inclusion and liquid.In addition, also can be as by making the solid refrigerant near to or in contact with the form of cooling off in trending extensional tectonic stress field SF2.
Figure 13 is the figure that roughly is illustrated in an example of the situation that the formation of cooling off trending extensional tectonic stress field SF2 is set in the break-up device shown in Figure 9 200.In break-up device 200, forming trending extensional tectonic stress field SF2 from being fixed on processing with inside to the mounting surface side of the machined object W of platform 12.Therefore, as shown in figure 13, in processing the cooling body 13 that cools off from line face W1 side in order to the machined object W that mounting is surperficial thereon is set with platform 12.By this kind cooling body 13 is set, and the tensile stress among the trending extensional tectonic stress field SF2 further strengthens.Thus, improve the certainty of the progress of slight crack CR.As a result of, disjunction machined object W more accurately.
As cooling body 13, for example can use Peltier (Peltier) element or coldplate (coolplate) etc.
As described above, according to present embodiment, rule with laser along the line irradiation heating laser that is pre-formed in the predetermined disjunction position of machined object by irradiation, and by the heating machined object make tensile stress act on line, and the progress from line to the slight crack of non-line face is produced in regular turn along the bearing of trend of line, but disjunction machined object thus.In addition, by the cooling trending extensional tectonic stress field, and the progress of slight crack is produced more expeditiously.
And the irradiation line forms the line processing of line and can carry out after locating the processing object position accurately with laser.Therefore, in identical device, form line accurately in predetermined disjunction position, and then, utilize the generation of the tensile stress of LASER HEATING, can carry out high-precision disjunction processing thus expeditiously.
＜variation 〉
Figure 14 is that expression is to the figure of non-line face W2 irradiation heating with another form of laser LBh.In said embodiment, expression is by making non-line face W2 towards upside, and from top irradiation heating laser LBh, and to the form of non-line face W2 irradiation heating with laser LBh, but also can replace this form and as shown in figure 14, by make non-line face W2 towards under the state of downside from below use laser LBh towards non-line face W2 irradiation heating, and make tensile stress TS act on the SL that rules.This can be by with the realization of getting off: for example in break-up device 100, form processing by the material that heating is seen through with laser LBh with platform 12, and arrange to heat below with platform 12 in processing and use laser optical system 30.
Claims (11)
1. the method for dividing of a machined object, it is characterized in that: it is the method for disjunction machined object; And comprise:
The line procedure of processing by making the 1st laser from the 1st outgoing source outgoing, and is shone described the 1st laser to the line face of described machined object, and forms line at described line face; And
The irradiation heating steps by making the 2nd laser from the 2nd outgoing source outgoing, and is that non-line face side is shone described the 2nd laser along described line from the opposing face of described line face, and described machined object is heated along described line; And
In described irradiation heating steps, by so that the mode that described line face contacts with cooling medium with described machined object mounting under the state on the described cooling medium, described the 2nd laser is relatively scanned along described line, be that near the described line trending extensional tectonic stress field moves and cools off and the irradiation of described non-line face is made the inside that is formed on the described machined object that comprises described line face by described the 2nd laser, thus, by the progress that is positioned at the slight crack from described line to described non-line face that described trending extensional tectonic stress field produces because of described line is produced in regular turn along described line, thereby with described machined object disjunction.
2. the method for dividing of machined object according to claim 1 is characterized in that:
In described irradiation heating steps, utilizing the guiding mechanism adjustment after the range of exposures of described the 2nd laser of described the 2nd outgoing source outgoing, described the 2nd laser is exposed to described non-line face.
3. the method for dividing of machined object according to claim 1 and 2 is characterized in that:
Described the 2nd laser is CO
2Laser.
4. the method for dividing of machined object according to claim 3 is characterized in that:
In described irradiation heating steps, shine described the 2nd laser with the impulse hunting pattern, on the branch section of the monolithic that the described machined object by disjunction forms, produce the fluctuating that the total reflectivity with cycle corresponding with the impulse hunting cycle reduces usefulness.
5. the method for dividing of machined object according to claim 1 and 2 is characterized in that:
Described the 1st laser is 3 times of higher hamonic waves of YAG laser.
6. the method for dividing of machined object according to claim 1 and 2 is characterized in that:
More comprise the registration process step, the posture in the horizontal plane of described machined object is revised; And
For the described machined object that has carried out described registration process step, carry out described line procedure of processing and described irradiation heating steps.
7. the method for dividing of machined object according to claim 1 and 2 is characterized in that:
In described line procedure of processing, produce fusion and solidify again by the illuminated position at described the 1st laser described illuminated position is made as affected zone, and form described line.
8. the method for dividing of machined object according to claim 1 and 2 is characterized in that:
In described line procedure of processing, produce by the illuminated position at described the 1st laser and to ablate and form slot part in described illuminated position, and form described line.
9. the method for dividing of machined object according to claim 1 and 2 is characterized in that:
In described line procedure of processing, on the 1st orthogonal direction and the 2nd direction, form a plurality of line with specific distance respectively; And
In described irradiation heating steps, carry out heating along the irradiation in the upwardly extending described line of described the 2nd side along after the irradiation of the upwardly extending described line of described the 1st side heating having carried out from described non-line face side.
10. the method for dividing of machined object according to claim 9 is characterized in that:
In described irradiation heating steps, the illumination beam diameter of described the 2nd laser is made as below the spacing when forming described line.
11. the method for dividing of the substrate of a tool optical element pattern is characterized in that: it is the method for the substrate of the disjunction tool optical element pattern that forming the optical element pattern on the surface two-dimensionally; And comprise:
The line procedure of processing by making the 1st laser from the 1st outgoing source outgoing, and is shone described the 1st laser to the line face of the substrate of described tool optical element pattern, and is formed line at described line face; And
The irradiation heating steps is by making as CO
2The 2nd laser of laser is from the 2nd outgoing source outgoing, and shines described the 2nd laser from described line face side along described line, and the substrate of described tool optical element pattern is heated along described line; And
In described irradiation heating steps,
By make described the 2nd laser along described line relatively scan the irradiation that makes on the substrate of described tool optical element pattern by described the 2nd laser be formed on the irradiation heating region around trending extensional tectonic stress field move, thus, by the progress that is positioned at the slight crack from described line to described non-line face that described trending extensional tectonic stress field produces because of described line is produced in regular turn along described line, and the substrate of the described tool optical element of disjunction pattern; And
By making described the 2nd laser with the outgoing of impulse hunting pattern, and on the branch section of described machined object and the optical element monolithic that forms by disjunction, produce the fluctuating that the total reflectivity with cycle corresponding with the impulse hunting cycle reduces usefulness.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011288125A JP5887928B2 (en) | 2011-12-28 | 2011-12-28 | Method for dividing workpiece and method for dividing substrate with optical element pattern |
| JP2011-288125 | 2011-12-28 |
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| CN103182602A true CN103182602A (en) | 2013-07-03 |
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| CN2012105283116A Pending CN103182602A (en) | 2011-12-28 | 2012-12-10 | To-be-processed object disjunction method and disjunction method for substrate provided with optical element pattern |
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| Country | Link |
|---|---|
| JP (1) | JP5887928B2 (en) |
| KR (1) | KR101398288B1 (en) |
| CN (1) | CN103182602A (en) |
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| CN114829311A (en) * | 2020-02-03 | 2022-07-29 | 日本电气硝子株式会社 | Method for manufacturing glass plate |
| CN114829311B (en) * | 2020-02-03 | 2024-03-12 | 日本电气硝子株式会社 | Method for manufacturing glass plate |
| CN111922532A (en) * | 2020-08-13 | 2020-11-13 | 晶科能源有限公司 | Solar cell processing equipment and processing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201334904A (en) | 2013-09-01 |
| JP2013136073A (en) | 2013-07-11 |
| KR101398288B1 (en) | 2014-06-30 |
| JP5887928B2 (en) | 2016-03-16 |
| KR20130076704A (en) | 2013-07-08 |
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