CN103176322B - 液晶显示装置及其制造方法 - Google Patents
液晶显示装置及其制造方法 Download PDFInfo
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Abstract
本发明公开了一种减少掩模数量并且提高孔径比的液晶显示装置及其制造方法。所述液晶显示装置包括:选通线和数据线,其在具有像素部分和焊盘部分的基板上垂直交叉;薄膜晶体管,其在所述基板上位于所述选通线和所述数据线的交叉处;像素电极,其在所述基板上位于像素部分中并且直接连接到所述薄膜晶体管的漏极;绝缘膜,其在包括所述像素电极和所述薄膜晶体管的所述基板的整个表面上;有机膜,其在所述薄膜晶体管和所述数据线上方的所述绝缘膜上;以及公共电极,其具有狭缝形状,与所述像素电极交叠,使得所述绝缘膜置于所述公共电极和所述像素电极之间。
Description
本申请要求2011年12月21日提交的韩国专利申请No.10-2011-0139042的优先权,该韩国专利申请以引用方式并入本文,视同在本文中完全阐述。
技术领域
本发明涉及一种液晶显示装置,更具体地,涉及一种减少掩模数量并提高孔径比(aperture ratio)的液晶显示装置及其制造方法。
背景技术
随着发展到信息化时代,对显示装置的各种要求逐渐增多,并且为了满足这种增多,已研究出各种平板显示装置(例如,液晶显示装置(LCD)、等离子体显示面板(PDP)、电致发光显示器(ELD)、真空荧光显示器(VDF)等),并且这些平板显示装置中的一些现在被用作各种设备中的显示装置。
在以上的平板显示装置之中,液晶显示装置最常用作移动图像显示装置,同时由于液晶显示装置的特性和优点(例如,图像质量优异、重量轻、外形薄和功耗低)而取代了传统的阴极射线管(CRT),并且液晶显示装置已发展成为除了移动目的(如,笔记本电脑的显示器)以外的接收广播信号并显示图像的TV和计算机的显示器。
这种液晶显示装置包括:滤色器基板,其上形成有滤色器阵列;薄膜晶体管基板,其上形成有薄膜晶体管阵列;以及液晶层,其形成在滤色器基板和薄膜晶体管基板之间。
作为液晶显示装置中最常用的代表性驱动模式,存在扭曲向列(TN)模式和面内切换(IPS)模式,在TN模式中,液晶导向器(director)被对准为以90°的角度扭转,并且通过向其施加电压将其驱动,在IPS模式中,通过在一个基板上平行对齐的像素电极和公共电极之间的水平电场驱动液晶。
在IPS模式中,像素电极和公共电极交替地形成在薄膜晶体管基板的开口处,并且通过像素电极和公共电极之间产生的水平电场使液晶取向。IPS模式液晶显示装置具有广视角,但是具有低孔径比和低透射率,因此,为了改进这类问题,已提出了一种边缘场切换(FFS)模式液晶显示装置。
FFS模式液晶显示装置包括在像素部分形成的单电极形状的公共电极和在公共电极上形成的狭缝形状的多个像素电极,或者包括单电极形状的像素电极和狭缝形状的多个公共电极,从而通过像素电极和公共电极之间形成的边缘场来操作液晶分子。
下文中,参照图1,将描述制造普通FFS模式液晶显示装置的方法。
图1是普通液晶显示装置的剖视图。
参照图1,制造普通FFS模式液晶显示装置的方法包括:使用第一掩模,在下基板10上形成选通线(未示出)、栅极10a、选通焊盘下电极(未示出)、数据焊盘下电极(未示出)和公共线(未示出);使用第二掩模,形成包括有源层13a和欧姆接触层13b的半导体层13;使用第三掩模,形成源极14a和漏极14b以及数据线DL;以及使用第四掩模,形成具有像素接触孔、选通接触孔和数据接触孔的第一钝化膜15a和第二钝化膜15b。
制造普通FFS模式液晶显示装置的方法还包括:使用第五掩模,形成设置在第二钝化膜15b上并且连接到漏极14b的像素电极16;使用第六掩模,形成露出选通焊盘下电极(未示出)和数据焊盘下电极(未示出)的第三钝化膜15c;以及使用第七掩模,形成与像素电极16产生边缘场的公共电极17,使得第三钝化膜15c置于公共电极17和像素电极16之间,并形成连接到选通焊盘下电极(未示出)的选通焊盘上电极(未示出)和连接到数据焊盘下电极(未示出)的数据焊盘上电极(未示出)。
制造普通FFS模式液晶显示装置的方法还包括:使用12个或更多个掩模,在上表面20上形成R、G和B滤色器(未示出)以及黑底19,并且形成柱状间隔体(未示出)以保持下基板10和上基板20之间的单元间隙,从而形成普通液晶显示装置。因此,普通液晶显示装置的制造工艺复杂,并且普通液晶显示装置的制造成本增加。
发明内容
因此,本发明致力于一种液晶显示装置及其制造方法。
本发明的一个目的在于提供一种液晶显示装置及其制造方法,该液晶显示装置允许在薄膜晶体管基板上形成的有机膜执行黑底的功能,从而减少掩模数量并提高孔径比。
为了实现这个目的和其它优点并且根据本发明的目的,如本文实施和广义描述的,一种液晶显示装置包括:选通线和数据线,所述选通线和数据线在具有像素部分和焊盘部分的基板上垂直交叉;薄膜晶体管,其在所述基板上位于所述选通线和所述数据线的交叉处;像素电极,其在所述基板上位于像素部分处并且直接连接到所述薄膜晶体管的漏极;绝缘膜,其在包括所述像素电极和所述薄膜晶体管的所述基板的整个表面上;有机膜,其在所述薄膜晶体管和所述数据线上方的所述绝缘膜上;以及公共电极,其具有狭缝形状,与所述像素电极交叠,使得所述绝缘膜置于所述公共电极和所述像素电极之间。
所述有机膜可以含有从由碳、氧化钛、彩色颜料和黑色树脂组成的组中选择的至少一种。
所述有机膜可以由光敏化合物(PAC)形成。
所述焊盘部分可以包括:选通焊盘下电极,其连接到所述选通线;数据焊盘下电极,其连接到所述数据线;以及选通焊盘上电极,其连接到所述选通焊盘下电极;以及数据焊盘上电极,其连接到所述数据焊盘下电极,其中,所述选通焊盘上电极和所述数据焊盘上电极与所述公共电极由同一层形成。
在本发明的另一个方面,一种制造液晶显示装置的方法包括以下步骤:使用第一掩模,在基板上形成选通线、栅极和选通焊盘下电极;在包括所述选通线、所述栅极和所述选通焊盘下电极的所述基板的整个表面上,形成栅绝缘层;使用第二掩模,在所述栅极上方的所述栅绝缘层上形成半导体层;使用第三掩模,在所述栅绝缘层上形成像素电极;使用第四掩模,在所述栅绝缘层上形成数据线和数据焊盘下电极,并且在所述半导体层上形成源极和与所述源极隔开并且直接连接到所述像素电极的漏极,从而形成包括所述栅极以及所述源极和所述漏极的薄膜晶体管;在包括所述数据线以及所述源极和所述漏极的所述基板的整个表面上,形成绝缘膜;使用第五掩模,在所述薄膜晶体管和所述数据线上方的所述绝缘膜上,形成有机材料层,使得在所述选通焊盘下电极和所述数据焊盘下电极上形成接触孔;以及使用第六掩模,在所述基板上形成与所述像素电极交叠的狭缝形状的公共电极,使得所述绝缘膜置于所述公共电极和所述像素电极之间。
形成所述有机材料层的步骤包括:在所述绝缘膜的整个表面上形成有机材料;通过使用半色调掩模作为第五掩模将所述有机材料曝光并显影来形成有机膜图案,其中,所述半色调掩模包括与所述选通焊盘下电极和所述数据焊盘下电极对应的透射区、与所述数据线和所述薄膜晶体管对应的阻挡区和与剩余区域对应的半透射区;以及对所述有机膜图案进行灰化,以形成所述有机材料层。
应理解,对本发明的以上总体描述和以下详细描述是示例性和说明性的,并且旨在对要求保护的本发明提供进一步说明。
附图说明
附图被包括以提供对本发明的进一步理解,并入且构成本申请的一部分,附图示出本发明的实施例并且与描述一起用于说明本发明的原理。在附图中:
图1是普通液晶显示装置的剖视图;
图2是根据本发明的液晶显示装置的剖视图;以及
图3A至图3H是示出根据本发明的用于制造液晶显示装置的方法的剖视图。
具体实施方式
下文中,参照附图,将详细描述根据本发明的液晶显示装置。
图2是根据本发明的液晶显示装置的剖视图,该图只示出了薄膜晶体管基板。
如图2中所示,根据本发明的液晶显示装置包括:选通线(未示出)和数据线DL,其在具有像素部分和焊盘部分的基板100上垂直交叉;薄膜晶体管,其形成在基板100的像素部分处并且包括栅极100a、栅绝缘层120、半导体层130、源极140a和漏极140b;像素电极160,其形成在栅绝缘层120上并且直接连接到漏极140b;绝缘膜150a,其形成在基板100的整个表面上,以覆盖像素电极160和薄膜晶体管;有机膜150d,其露出像素电极160上方的绝缘膜150a,形成在薄膜晶体管和数据线DL上方的绝缘膜150a上,并且包括遮光(light shielding)材料(未示出);以及狭缝形状的多个公共电极170a,其与像素电极160中的每个交叠,使得绝缘膜150a置于公共电极170a与像素电极160中的每个之间。
更详细地,选通线(未示出)和数据线DL在基板100上彼此垂直交叉,以限定多个像素部分,并且薄膜晶体管形成在选通线(未示出)和数据线DL的交叉处。另外,连接到选通线(未示出)的选通焊盘下电极100b和连接到数据线DL的数据焊盘下电极140c形成在焊盘部分处,并且设置公共线(未示出)和连接到公共线的公共焊盘(未示出)。
薄膜晶体管中的每个包括顺序堆叠的栅极100a、源极140a和漏极140b以及包括有源层130a和欧姆接触层130b的半导体层130。在此,栅极100a可以从选通线(未示出)突出或者可以限定选通线(未示出)的部分区域,使得来自选通线(未示出)的扫描信号被提供给栅极100a。
有源层130a与栅极100a交叠,使得由诸如氧化硅或氮化硅的无机绝缘材料形成的栅绝缘膜120置于有源层130a和栅极100a之间。形成在有源层130a上的欧姆接触层130b用于减小源极140a和漏极140b与有源层130a之间的电接触电阻。另外,形成与源极140a和漏极140b之间的隔离部分对应的欧姆接触层130,从而形成沟道。
源极140a连接到数据线DL,并且从数据线DL接收像素信号,并且漏极140b与源极140a在沟道两侧相对形成。具体地,单电极形状的像素电极160形成在栅绝缘膜120上的像素部分处。
像素电极160由诸如氧化锡(TO)、铟锡氧化物(ITO)、铟锌氧化物(IZO)或铟锡锌氧化物(ITZO)的透明导电材料形成。另外,将漏极140b形成为与像素电极160交叠,并且通过像素电极160和漏极140b之间的直接接触,来提高漏极140b和像素电极160之间的接触特性。
另外,由诸如氮化硅(SiNx)膜的材料形成的绝缘膜150a设置在包括源极140a和漏极140b、像素电极160和数据线DL的栅绝缘膜120的整个表面上。绝缘膜150a露出选通焊盘下电极100b和数据焊盘下电极140c。然后,由遮光材料形成的有机膜150d设置在绝缘膜150a上。有机膜150d露出像素电极160上方的绝缘膜150a,并且覆盖薄膜晶体管和数据线DL上方的绝缘膜150a。
更详细地,有机膜150d由吸收光并且含有碳、氧化钛(TiOx)、彩色颜料等的有机材料形成,或者由基于黑色的有机材料(例如,吸收光的黑色树脂)形成。具体地,如果有机膜150d还形成在像素电极160上,则当通过像素电极160和公共电极170a之间(在像素电极160和公共电极170a之间设置有绝缘膜150a)产生的边缘场驱动液晶层的液晶分子时,由于有机膜150d的上表面上的不均匀性,导致出现瑕疵并且功耗增大。
具体地,因为吸收光并且含有碳、氧化钛(TiOx)、彩色颜料等的有机材料形成或者基于黑色的有机材料是光敏化合物(PAC),所以可在不使用光刻胶的情况下对有机膜150d构图。
另外,在有机膜150d上形成狭缝形状的多个公共电极170a,在绝缘膜150a置于公共电极170a和像素电极160之间的条件下,该多个公共电极170a与像素电极160交叠,以与像素电极160形成边缘场。公共电极170a也由诸如氧化锡(TO)、铟锡氧化物(ITO)、铟锌氧化物(IZO)或铟锡锌氧化物(ITZO)的透明导电材料形成。
虽然在附图中未示出,但是R、G和B滤色器、柱状间隔体等形成在滤色器基板上。因此,在像素电极160和公共电极170a之间(在像素电极160和公共电极170a之间设置有绝缘膜150a)产生边缘场,形成在薄膜晶体管基板和滤色器基板之间的液晶层的液晶分子由于介电各向异性而旋转,并且穿过像素部分的光的透射率根据液晶分子的旋转程度而变化,从而产生图像。
另外,连接到选通焊盘下电极100b的选通焊盘上电极170b和连接到数据焊盘下电极140c的数据焊盘上电极170c与共电极170a由同一层形成。
在根据本发明的上述液晶显示装置中,像素电极160和漏极140b直接接触,而不需要像素接触孔,因此像素电极160和漏极140b之间的接触特性提高。另外,因为形成在绝缘膜150a上的有机膜150d执行黑底的功能,所以可以省去在滤色器基板上形成黑底的工艺,因此当薄膜晶体管基板和滤色器基板接合时,不必考虑接合裕量(margin),从而可以提高孔径比。另外,通过露出像素电极160和公共电极170a交叠的绝缘膜150a去除了瑕疵,从而提高了显示质量并降低了功耗。
下文中,参照附图,将详细描述根据本发明的用于制造液晶显示装置的方法。
图3A至图3H是示出根据本发明的用于制造液晶显示装置的方法的剖视图。图3A至图3H只示出薄膜晶体管基板。
首先,如图3A中所示,使用第一掩模,在具有像素部分和焊盘部分的基板100上形成栅极100a、选通线(未示出)、选通焊盘下电极100b和公共线(未示出)。更详细地,通过诸如溅射的沉积法,在基板100上形成金属层,然后,通过对金属层构图来形成栅极100a、选通线(未示出)、选通焊盘下电极100b和公共线(未示出)。
金属层可以具有堆叠了两层或更多层的结构,例如Al/Cr、Al/Mo、Al(Nd)/Al、Al(Nd)/Cr、Mo/Al(Nd)/Mo、Cu/Mo、Ti/Al(Nd)/Ti、Mo/Al、Mo/Ti/Al(Nd)、Cu合金/Mo、Cu合金/Al、Cu合金/Mo合金、Cu合金/Al合金、Al/Mo合金、Mo合金/Al、Al合金/Mo合金、Mo合金/Al合金或Mo/Al合金,或者具有单层结构,例如,Mo、Ti、Cu、AlNd、Al、Cr、Mo合金、Cu合金或Al合金。
另外,如图3B中所示,在包括栅极100a、选通线(未示出)、选通焊盘下电极100b和公共线(未示出)的基板100的整个表面上形成栅绝缘膜120。
此后,使用第二掩模,在栅极100a上方的栅绝缘膜120上形成半导体层130。半导体层130具有这样的结构:有源层130a和欧姆接触层130b顺序堆叠。此后,如图3C中所示,使用第三掩模,在像素部分处形成像素电极160。更详细地,在包括半导体层130的基板100的整个表面上,设置由氧化锡(TO)、铟锡氧化物(ITO)、铟锌氧化物(IZO)或铟锡锌氧化物(ITZO)形成的透明导电材料层,并且通过对透明导电材料层构图来形成多个像素电极160,所述多个像素电极160中的每一个均具有单电极形状。
此后,如图3D中所示,使用第四掩模,形成源极140a和漏极140b以及与数据线DL隔开指定间隔的数据焊盘下电极140c。由此,形成多个薄膜晶体管,所述多个薄膜晶体管中的每一个均包括栅极100a、半导体层130以及源极140a和漏极140b。数据焊盘下电极140c可以如上所述与数据线DL形成在同一层中,或者可以与选通焊盘下电极100b在同一层中与选通焊盘下电极100b同时形成。
具体地,漏极140b形成在像素电极160的部分区域上,以与像素电极160交叠,从而漏极140b和像素电极160直接接触。因此,可提高漏极140b和像素电极160之间的接触特性,并且可通过省去形成像素接触孔的工艺来减少掩模数量。
此后,如图3E中所示,在包括数据线DL、源极140a和漏极140b以及数据焊盘下电极140c的栅绝缘膜120的整个表面上形成绝缘膜150a,并且在绝缘膜150a的整个表面上设置有机材料层150b。有机材料层150b由吸收光并且含有碳、氧化钛(TiOx)、彩色颜料等的有机材料或者基于黑色的有机材料形成。例如,有机材料由吸收光的黑色树脂形成,并且有机材料层150b执行黑底的功能。
具体地,因为吸收光并且含有碳、氧化钛(TiOx)、彩色颜料等的有机材料或者基于黑色的有机材料是光敏化合物(PAC),所以可以在有机材料层150b上没有形成光刻胶的情况下,直接对有机材料层150b构图。
通常,在滤色器基板上形成黑底,在这种情况下,通过掩模工艺形成黑底,因此额外需要掩模工艺。另外,当将薄膜晶体管基板接合到滤色器基板时,需要考虑黑底和薄膜晶体管基板之间的接合裕量,因此可能减小孔径比。
然而,在根据本发明的液晶显示装置中,由吸收光的有机材料或基于黑色的有机材料形成的有机材料层150b执行黑底的功能,因此可防止出现以上问题。
更详细地,用作第五掩模的半色调掩模对齐在有机材料层150b上。在此,半色调掩模包括透射区、阻挡区和半透射区。半色调掩模的透射区对应于选通焊盘下电极100b和数据焊盘下电极140c,阻挡区对应于数据线DL和薄膜晶体管,并且半透射区对应于剩余区域。通过使用半色调掩模将有机材料层150b曝光和显影来形成图3F中所示的有机膜图案150c。
有机膜图案150c露出选通焊盘下电极100b和数据焊盘下电极140c上方的绝缘膜150a。因此,通过去除绝缘膜150a和与选通焊盘下电极100b对应的栅绝缘膜120来形成选通接触孔,并且通过去除与数据焊盘下电极140c对应的绝缘膜150a来形成数据接触孔。
此后,如图3G中所示,通过有机膜图案150c的灰化处理形成去除了半色调的有机膜150d。由此,在灰化后与阻挡区对应的有机膜150d的厚度小于在灰化前与阻挡区对应的有机膜图案150c的厚度。
此后,如图3H中所示,在包括有机膜150d的钝化膜的整个表面上设置由氧化锡(TO)、铟锡氧化物(ITO)、铟锌氧化物(IZO)或铟锡锌氧化物(ITZO)形成的透明导电材料层,并且通过使用第六掩模对透明导电材料层构图来形成狭缝形状的多个公共电极170a。公共电极170a与像素部分处的像素电极160交叠,使得绝缘膜150a置于公共电极170a和像素电极160之间,从而产生边缘场。
同时,形成通过选通接触孔连接到选通焊盘下电极100b的选通焊盘上电极170b和通过数据接触孔连接到数据焊盘下电极140c的数据焊盘上电极170c。
形成普通有机膜,以覆盖薄膜晶体管、数据线和像素电极,并且在这种情况下,由于有机膜的厚度不均匀导致可能产生瑕疵并且可能增加功耗。
更详细地,使用有机膜作为掩模,对被形成为覆盖选通焊盘下电极和数据焊盘下电极的绝缘膜构图,从而露出选通焊盘下电极和数据焊盘下电极。然而,在对绝缘膜构图的干蚀刻工艺期间,蚀刻气体还去除有机膜的多个部分,从而有机膜的上表面可能是不均匀的。
另外,因为使用半色调掩模对根据本发明的有机膜构图,所以如果在绝缘膜和有机膜置于像素电极和公共电极之间的条件下像素电极和公共电极形成边缘场,则在灰化工艺期间有机膜不均匀的上表面可能产生瑕疵。
然而,在本发明中,因为如上所述执行黑底功能的有机膜形成在薄膜晶体管基板上并且露出与像素电极对应的绝缘膜,所以防止产生瑕疵并且降低了功耗。另外,通过省去形成黑底的掩模工艺来减少掩模数量,从而可以简化液晶显示装置的制造工艺并且可以降低液晶显示装置的制造成本。由此,当接合薄膜晶体管基板和滤色器基板时,考虑到不需要接合裕量,从而提高了孔径比。
上述根据本发明的液晶显示装置及其制造方法具有以下效果。
第一,像素电极和漏极直接接触,而不需要像素接触孔,从而可提高像素电极和漏极之间的接触特性,并且省去了形成像素接触孔的工艺,因此可以减少掩模数量。
第二,在薄膜晶体管基板上形成执行黑底功能的有机膜,因此可以减少掩模数量,并且考虑到当接合薄膜晶体管基板和滤色器基板时不需要接合裕量,因此可以提高孔径比。
第三,含有遮光材料的有机膜露出与像素电极对应的绝缘膜,因此可以去除瑕疵,以提高显示质量,并且可以降低功耗。
对于本领域的技术人员将明显的是,可以在不脱离本发明的精神或范围的情况下对本发明进行各种修改和变形。因此,本发明旨在涵盖落入所附权利要求书及其等同物范围内的本发明的修改和变形。
Claims (4)
1.一种制造液晶显示装置的方法,所述方法包括以下步骤:
使用第一掩模,在基板上形成选通线、栅极和选通焊盘下电极;
在包括所述选通线、所述栅极和所述选通焊盘下电极的所述基板的整个表面上,形成栅绝缘层;
使用第二掩模,在所述栅极上方的所述栅绝缘层上形成半导体层;
使用第三掩模,在所述栅绝缘层上形成像素电极;
使用第四掩模,在所述栅绝缘层上形成数据线和数据焊盘下电极,并且在所述半导体层上形成源极和与所述源极隔开并且直接连接到所述像素电极的漏极,从而形成包括所述栅极以及所述源极和所述漏极的薄膜晶体管;
在包括所述数据线以及所述源极和所述漏极的所述基板的整个表面上,形成绝缘膜;
使用第五掩模,在所述薄膜晶体管和所述数据线上方的所述绝缘膜上,形成有机材料层,使得在所述选通焊盘下电极和所述数据焊盘下电极上形成接触孔;以及
使用第六掩模,在所述基板上形成狭缝形状的公共电极,以与所述像素电极交叠,使得所述绝缘膜置于所述公共电极和所述像素电极之间,
其中,形成所述有机材料层的步骤包括:
在所述绝缘膜的整个表面上形成有机材料;
通过使用半色调掩模作为第五掩模将所述有机材料曝光并显影来形成有机膜图案,其中,所述半色调掩模包括与所述选通焊盘下电极和所述数据焊盘下电极对应的透射区、与所述数据线和所述薄膜晶体管对应的阻挡区、和与剩余区域对应的半透射区;以及
对所述有机膜图案进行灰化,以形成所述有机材料层。
2.根据权利要求1所述的方法,所述方法还包括以下步骤:
形成连接到所述选通焊盘下电极的选通焊盘上电极以及连接到所述数据焊盘下电极的数据焊盘上电极,
其中,所述选通焊盘上电极和所述数据焊盘上电极与所述公共电极由同一层形成。
3.根据权利要求1所述的方法,其中,所述有机材料层含有从由碳、氧化钛、彩色颜料和黑色树脂组成的组中选择的至少一种。
4.根据权利要求1所述的方法,其中,所述有机材料层由光敏化合物PAC形成。
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