CN103176116A - Testing device and testing method for semiconductor devices - Google Patents
Testing device and testing method for semiconductor devices Download PDFInfo
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- CN103176116A CN103176116A CN2013100541421A CN201310054142A CN103176116A CN 103176116 A CN103176116 A CN 103176116A CN 2013100541421 A CN2013100541421 A CN 2013100541421A CN 201310054142 A CN201310054142 A CN 201310054142A CN 103176116 A CN103176116 A CN 103176116A
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- 238000012360 testing method Methods 0.000 title claims abstract description 177
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000523 sample Substances 0.000 claims abstract description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000011084 recovery Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000010998 test method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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Abstract
The invention relates to a testing device and a testing method for semiconductor devices. The testing device comprises a testing platform and a probe station, the testing platform comprises a table plate, a circular piece fixed on the table plate, and a semiconductor device arranged on the circular piece, the semiconductor device comprises a testing chip and a non-testing chip, a probe in the probe station comprises a probe contacting with the front of the testing chip and a probe contacting with the silicon surface on the front of the non-testing chip and capable of applying high voltage, and the table plate is a grounded table plate. The testing method includes: fixing the circular piece on the table plate, and selecting the testing chip and the non-testing chip; grounding the table plate; enabling the testing probe to contact with the front of the testing chip, and grounding the testing chip; enabling the high-voltage probe to contact with the silicon surface of the front of the non-testing chip, and applying the high voltage to the testing chip through the high-voltage probe; and reading a voltage and current curve of the testing chip by the testing probe. The high voltage is directly applied on the front of the chip, so that interferences such as sparking are reduced, testing results are accurate, and safety is higher.
Description
Technical field
The present invention relates to a kind of semiconductor device arrangements and method, be specifically related to a kind of semiconductor device testing apparatus and method of testing thereof.
Background technology
Fast recovery diode is widely used in field of power electronics as afterflow and rectifying device.When voltage breakdown requires to reach 1200V or when higher, at wafer level, fast recovery diode tested the difficulty that will become.Existing measuring technology adopts testing apparatus+probe station, connects by cable; Disk is fixed on the platform dish, and by to the platform dish, probe applies electrical bias, and the fast recovery diode characteristic is tested.Because fast recovery diode is vertical device, when carrying out the fast recovery diode characteristic test, need the platform dish is carried out the current potential setting.When withstand voltage V parameter br test, need the platform dish is added high pressure especially, sparking easily occurs wait interference, affect test result.
Summary of the invention
For the deficiencies in the prior art, a kind of semiconductor device testing apparatus of the present invention and method of testing thereof, the present invention directly applies high pressure in the front of chip, reduces the interference such as sparking, and test result is accurate, and security is higher.
The objective of the invention is to adopt following technical proposals to realize:
A kind of semiconductor device testing apparatus comprises test cell and probe station, and described test cell comprises the platform dish, be fixed on the disk on the platform dish and be arranged at semiconductor devices on disk, and described semiconductor devices comprises test chip and non-test chip; Its improvements are, the probe in described probe station comprises and the probe of the positive probe that contacts of test chip with the applied high pressure that contacts with non-test chip front silicon face, described the platform dish that dish is ground connection.
Wherein, the test chip of described semiconductor devices and non-test chip all adopt high pressure fast recovery diode, IGBT device or MOSEFT pipe.
Wherein, the diameter of described disk is less than the diameter of platform dish; Described dish contacts with the disk back side; A test chip and at least one non-test chip are set on described disk;
Described disk is made of semiconductor material, and described dish is made of metal material.
Wherein, described is test probe with the positive probe that contacts of test chip, and this moment, the test chip current potential was 0; The probe of the applied high pressure of described and non-test chip Surface Contact is high-voltage probe, and this moment, the test chip current potential was the high voltage that applies; Described high voltage 〉=1200V.
Wherein, the spacing between described test probe and high-voltage probe is adjustable, and spacing range is 1-100um;
Adopt the voltage and current curve of described probe test read test chip; Outside high pressure is applied on test chip by described high-voltage probe.
The present invention is based on the method for testing of a kind of semiconductor device testing apparatus that another purpose provides, its improvements are, described method comprises the steps:
(1) disk is fixed on the platform dish selected test chip and non-test chip;
(2) with platform dish ground connection;
(3) contact test probe and test chip are positive, and with test chip ground connection;
(4) with high-voltage probe and non-test chip is positive contacts, and high pressure is put on test chip by high-voltage probe;
(5) the voltage and current curve of described test probe read test chip.
Compared with the prior art, the beneficial effect that reaches of the present invention is:
1, after semiconductor devices (as the high pressure fast recovery diode chip) processing neutralization machines, at wafer level, the characteristic of semiconductor devices is tested, especially withstand voltage V parameter br tests.The present invention operates succinctly, utilizes existing testing apparatus to add assistance platform, in the test chip process, at wafer level, the characteristic of semiconductor devices is tested and is assessed.
2, the present invention directly applies high pressure in the front of test chip, by two probes, the withstand voltage V parameter br of semiconductor devices is tested, and test result is accurate, reduces sparking and waits interference, is subjected to external interference little, the security raising.
3, a kind of semiconductor device testing apparatus provided by the invention and method of testing thereof, not only can be used for the test of high pressure fast recovery diode, and be also pervasive in other high tension apparatus (including but not limited to igbt chip, MOSFET pipe etc.).For dissimilar device, the different parameters of different components needs the positive parasitic parameter of introducing that connects of assessment on the impact of test result.
Description of drawings
Fig. 1 is the test schematic diagram of the existing withstand voltage V parameter br of high pressure fast recovery diode (FRD);
Wherein: 1-platform dish, 2-disk, 3-test chip, 4-test probe;
Fig. 2 is the test schematic diagram of the withstand voltage V parameter br of high pressure fast recovery diode provided by the invention (FRD);
Wherein: 1-platform dish, 2-disk, 3-test chip, 4-test probe, 5-high-voltage probe, the non-test chip of 6-;
Fig. 3 is the test sample 1 of the withstand voltage V parameter br of high pressure fast recovery diode of the present invention (FRD);
Wherein: 3-test chip, 4-test probe; The 5-high-voltage probe.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Fig. 1 is the test schematic diagram of the existing withstand voltage V parameter br of high pressure fast recovery diode (FRD).Whole dish is in noble potential, and the platform dish contacts with the back side of disk; Fig. 2 is the test schematic diagram of the withstand voltage V parameter br of high pressure fast recovery diode of the present invention (FRD), comprise the test cell and the probe station that connect by cable, test cell comprises platform dish 1, be fixed on the disk 2 on platform dish 1 and be arranged at semiconductor devices on disk 2, and semiconductor devices comprises test chip 3 and non-test chip 6; Semiconductor devices comprises high pressure fast recovery diode, IGBT device and MOSEFT pipe.The probe of probe station comprises and the high-voltage probe of the positive test probe that contact of test chip 3 with the applied high pressure that contact with non-test chip 6 fronts, and high voltage puts on test chip 3 by high-voltage probe, and platform dish 1 is the platform dish of ground connection.Described dish contacts with the disk back side; A test chip and at least one non-test chip are set on described disk; Described disk is made of semiconductor material, and described dish is made of metal material.
The diameter of disk 2 is less than the diameter of platform dish 1.When test probe contacted with test chip 3 is positive, described test chip 3 current potentials were 0; When high-voltage probe contacted with non-test chip 6 is positive, test chip 3 current potentials were the high voltage that applies.Spacing between test probe and high-voltage probe is adjustable, adopts the voltage and current curve of test probe read test chip.When adopting the present invention to test, platform dish 1 only plays fixed wafer 2, and only high-voltage probe is in noble potential, and high-voltage probe is positioned at the front of non-test core on disk 2.The area of Hi-pot test reduces (by the platform dish to probe), and the security of test improves.By regulating the spacing of Hi-pot test and test probe, spacing range is 1-100um; Can effectively reduce the probability of sparking, reduce the interference of test, improve the accuracy of test result.
The present invention also provides the method for testing of semiconductor device testing apparatus, comprises the steps:
(1) disk is fixed on the platform dish selected test chip 3 and non-test chip 6;
(2) the platform dish only plays the fixing effect of disk, with platform dish ground connection.
(3) test chip 3 contacts with test probe, test chip 3 current potential ground connection.
(4) the non-test chip in high-voltage probe and disk 6 is positive contacts, and high pressure is put on test chip 3; Contact pattern can for positive certain non-test chip, can be also arbitrary graphic.
(5) test probe is by contacting with test chip 3, the voltage/current curve of read test chip 3.
Embodiment
Fig. 3 is the test sample 1 of the withstand voltage V parameter br of high pressure fast recovery diode of the present invention (FRD).High-voltage probe contacts with arbitrary non-test chip, Fig. 3 provide for test probe and high-voltage probe respectively with the sectional view of chip.As shown in Figure 3, disk is fixed on the platform dish selected test chip 3 and non-test chip 6.Test chip 3 contacts with test probe 4, current potential ground connection.Non-test chip 6 contacts with high-voltage probe 5.In the test case of Fig. 3, high-voltage probe 5 applies high pressure, test chip 3 ground connection.The reverse voltage of test chip 3, the i.e. reverse voltage of P/N knot.Only introduce P/N knot forward voltage 0.7V in test case 1.For 1200V or the device of high pressure more, the error of test is very little, and the accuracy of test can guarantee.
Semiconductor device testing apparatus provided by the invention and method of testing thereof, adopt the withstand voltage V parameter br of the positive connected mode semiconductor test of non-test chip (as the high pressure fast recovery diode) in disk, this method of testing is succinct, reduce sparking and wait test to disturb, improve accuracy and the security of test.This method of testing extends to other high tension apparatus (as igbt chip, MOSFET pipe etc.).
Should be noted that at last: above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit, although with reference to above-described embodiment, the present invention is had been described in detail, those of ordinary skill in the field are to be understood that: still can modify or be equal to replacement the specific embodiment of the present invention, and do not break away from any modification of spirit and scope of the invention or be equal to replacement, it all should be encompassed in the middle of claim scope of the present invention.
Claims (6)
1. a semiconductor device testing apparatus, comprise test cell and probe station, and described test cell comprises the platform dish, be fixed on the disk on the platform dish and be arranged at semiconductor devices on disk, and described semiconductor devices comprises test chip and non-test chip; It is characterized in that, the probe in described probe station comprises and the probe of the positive probe that contacts of test chip with the applied high pressure that contacts with non-test chip front silicon face, described the platform dish that dish is ground connection.
2. semiconductor device testing apparatus as claimed in claim 1, is characterized in that, the test chip of described semiconductor devices and non-test chip all adopt high pressure fast recovery diode, IGBT device or MOSEFT pipe.
3. semiconductor device testing apparatus as claimed in claim 1, is characterized in that, the diameter of described disk is less than the diameter of platform dish; Described dish contacts with the disk back side; A test chip and at least one non-test chip are set on described disk;
Described disk is made of semiconductor material, and described dish is made of metal material.
4. semiconductor device testing apparatus as claimed in claim 1, is characterized in that, described is test probe with the positive probe that contacts of test chip, and this moment, the test chip current potential was 0; The probe of the applied high pressure of described and non-test chip Surface Contact is high-voltage probe, and this moment, the test chip current potential was the high voltage that applies; Described high voltage 〉=1200V.
5. semiconductor device testing apparatus as claimed in claim 4, is characterized in that, the spacing between described test probe and high-voltage probe is adjustable, and spacing range is 1-100um;
Adopt the voltage and current curve of described probe test read test chip; Outside high pressure is applied on test chip by described high-voltage probe.
6. the method for testing of a semiconductor device testing apparatus, is characterized in that, described method comprises the steps:
(1) disk is fixed on the platform dish selected test chip and non-test chip;
(2) with platform dish ground connection;
(3) contact test probe and test chip are positive, and with test chip ground connection;
(4) with high-voltage probe and non-test chip is positive contacts, and high pressure is put on test chip by high-voltage probe;
(5) the voltage and current curve of described test probe read test chip.
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| CN201310054142.1A CN103176116B (en) | 2013-02-20 | 2013-02-20 | A kind of semiconductor device testing apparatus and method of testing thereof |
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| CN201310054142.1A CN103176116B (en) | 2013-02-20 | 2013-02-20 | A kind of semiconductor device testing apparatus and method of testing thereof |
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| CN103176116B CN103176116B (en) | 2016-01-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291264A (en) * | 2015-05-13 | 2017-01-04 | 国网智能电网研究院 | The high-voltage detecting device of a kind of power electronic chip and high-voltage detecting method |
| CN110231501A (en) * | 2019-01-18 | 2019-09-13 | 全球能源互联网研究院有限公司 | A kind of probe card, the test equipment including probe card, test method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1380811A (en) * | 2002-04-19 | 2002-11-20 | 大连理工大学 | Composite probe for plasma diagnosis |
| US20040008052A1 (en) * | 2002-07-11 | 2004-01-15 | Hideaki Sakaguchi | Semiconductor testing apparatus and semiconductor testing method |
| CN101056493A (en) * | 2007-05-10 | 2007-10-17 | 东北大学 | Low-temperature plasma diagnosis device |
| CN201490168U (en) * | 2009-04-03 | 2010-05-26 | 中茂电子(深圳)有限公司 | Probe detection machine station with electrostatic discharge device |
| CN201740845U (en) * | 2010-05-11 | 2011-02-09 | 扬州杰利半导体有限公司 | High voltage resistant testing device of semiconductor chip |
| JP2011252792A (en) * | 2010-06-02 | 2011-12-15 | Fuji Electric Co Ltd | Testing device and testing method |
-
2013
- 2013-02-20 CN CN201310054142.1A patent/CN103176116B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1380811A (en) * | 2002-04-19 | 2002-11-20 | 大连理工大学 | Composite probe for plasma diagnosis |
| US20040008052A1 (en) * | 2002-07-11 | 2004-01-15 | Hideaki Sakaguchi | Semiconductor testing apparatus and semiconductor testing method |
| CN101056493A (en) * | 2007-05-10 | 2007-10-17 | 东北大学 | Low-temperature plasma diagnosis device |
| CN201490168U (en) * | 2009-04-03 | 2010-05-26 | 中茂电子(深圳)有限公司 | Probe detection machine station with electrostatic discharge device |
| CN201740845U (en) * | 2010-05-11 | 2011-02-09 | 扬州杰利半导体有限公司 | High voltage resistant testing device of semiconductor chip |
| JP2011252792A (en) * | 2010-06-02 | 2011-12-15 | Fuji Electric Co Ltd | Testing device and testing method |
Non-Patent Citations (1)
| Title |
|---|
| 刘立明: "发光二极管及半导体激光器特性参数测试研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》, no. 2, 15 August 2007 (2007-08-15) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291264A (en) * | 2015-05-13 | 2017-01-04 | 国网智能电网研究院 | The high-voltage detecting device of a kind of power electronic chip and high-voltage detecting method |
| CN110231501A (en) * | 2019-01-18 | 2019-09-13 | 全球能源互联网研究院有限公司 | A kind of probe card, the test equipment including probe card, test method |
| CN110231501B (en) * | 2019-01-18 | 2024-03-19 | 全球能源互联网研究院有限公司 | Probe card, test equipment comprising probe card and test method |
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| CN103176116B (en) | 2016-01-20 |
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Address after: 102209 18 Riverside Avenue, Changping District science and Technology City, Beijing Co-patentee after: STATE GRID CORPORATION OF CHINA Patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Address before: 102209 Beijing Changping District future science and Technology North District Smart Grid Research Institute Co-patentee before: State Grid Corporation of China Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Address after: 102209 Beijing Changping District future science and Technology North District Smart Grid Research Institute Co-patentee after: STATE GRID CORPORATION OF CHINA Patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Address before: 102211 Beijing Changping District small Tang Shan town big east stream Village Road 270 (future science and technology city) Co-patentee before: State Grid Corporation of China Patentee before: STATE GRID SMART GRID Research Institute |
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Effective date of registration: 20191028 Address after: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Address before: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Co-patentee before: STATE GRID CORPORATION OF CHINA Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. |
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Effective date of registration: 20200109 Address after: 211106 Building 2, No.19, Chengxin Avenue, Jiangning Economic and Technological Development Zone, Nanjing City, Jiangsu Province (Jiangning Development Zone) Patentee after: Nanruilianyan Semiconductor Co.,Ltd. Address before: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. |
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Denomination of invention: Testing device and testing method for semiconductor devices Effective date of registration: 20200528 Granted publication date: 20160120 Pledgee: NARI TECHNOLOGY Co.,Ltd. Pledgor: Nanruilianyan Semiconductor Co.,Ltd. Registration number: Y2020980002584 |
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Date of cancellation: 20220329 Granted publication date: 20160120 Pledgee: NARI TECHNOLOGY Co.,Ltd. Pledgor: Nanruilianyan Semiconductor Co.,Ltd. Registration number: Y2020980002584 |