CN103165775A - Ultraviolet light-emitting diode with high reflection film and manufacturing method of ultraviolet light-emitting diode - Google Patents
Ultraviolet light-emitting diode with high reflection film and manufacturing method of ultraviolet light-emitting diode Download PDFInfo
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- CN103165775A CN103165775A CN2013101172176A CN201310117217A CN103165775A CN 103165775 A CN103165775 A CN 103165775A CN 2013101172176 A CN2013101172176 A CN 2013101172176A CN 201310117217 A CN201310117217 A CN 201310117217A CN 103165775 A CN103165775 A CN 103165775A
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Abstract
The invention discloses an AlGaN-based ultraviolet light-emitting diode device with a high reflection film structure and a manufacturing method of the ultraviolet light-emitting diode, relates to the technical field of micro-electronics, and mainly solves the problem of low luminous efficiency of a back light-emitting structure of an ultraviolet light-emitting diode. The device sequentially comprises a substrate, an AlN nucleating layer, an n-type AlGaN potential barrier layer, an active area, a p-type AlGaN potential barrier layer and a p-type GaN cap layer, and a high reflection film is manufactured on the p-type AlGaN potential barrier layer and used for emitting light from the bottom of the device after reflecting the light. The light absorbed by the p-type GaN cap layer in the ultraviolet light-emitting diode is emitted from the bottom of the ultraviolet light-emitting diode, so that the power and the efficiency of the emergent light are greatly improved. The device is simple in process, fine in repeatability and high in reliability, and can be used for the field of air/water purification, medical treatment, biomedicine, white-light illumination, space communication and the like.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of ultraviolet light-emitting diode with resonance highly reflecting films and preparation method thereof.
Background technology
The III-V group iii v compound semiconductor material is as the outstanding representative of third generation semi-conducting material, have a lot of good characteristics, especially aspect optical application, { Ga (Al, In) N} can cover whole visible region and black light district to the alloy that is comprised of Ga, Al, In, N.And the III group-III nitride of fine casting ore deposit structure is all direct band gap, is very suitable for the application of opto-electronic device.Particularly at ultraviolet region, the ultraviolet LED of AlGaN based multiple quantum well has demonstrated huge advantage, becomes one of focus of present ultraviolet light photo device development.Yet, along with shortening of LED emission wavelength, in GaN base LED active layer, the Al component is more and more higher, high-quality AlGaN material preparation has great difficulty, the AlGaN material cause the external quantum efficiency of UV-LED and luminous power all very low, becoming the bottleneck of UV-LED development, is current urgent problem.
AlGaN based multiple quantum well UV-LED device has broad application prospects.Ultraviolet light has major application to be worth in fields such as silk screen printing, polymer cure, environmental protection, air and water purification, medical treatment and biomedicine, white-light illuminating and military detection, space secure communications.
Because p-type AlGaN layer is difficult to form good ohmic contact, good hole injection efficiency is provided, therefore adopt the p-GaN layer to make the p-type ohmic contact in p-type layer one side, to improve the hole injection efficiency of p-type layer more.But due to the p-GaN layer to the strong absorption of ultraviolet light (200nm-365nm) and lower reflectivity, quantum well is absorbed by the p-GaN layer to the light of p-type layer one side radiation, thereby can not be extracted, cause the loss of lower light extraction efficiency and optical radiation power serious.Although silver-colored speculum reaches more than 90% the reflectivity of blue light, to the reflectivity lower (＜10%) of the ultraviolet light of 200nm-365nm wave band.The wide part that is not extracted is absorbed and converts heat to, makes device temperature increase, and has a strong impact on device reliability.Aluminium is higher at the reflectivity of ultraviolet band, but due to the work function higher (7.5eV) of P type layer, and the work function of aluminium only has 4.28eV, so aluminium is difficult to obtain contacting of ohm property with P type layer.At present, the ultraviolet light-emitting diode of 200-365nm wave band is not generally used speculum in order to obtain electric property preferably.
Summary of the invention
In view of this, the invention discloses a kind of AlGaN base ultraviolet light-emitting diode device and manufacture method with high reflective film structure, it relates to microelectronics technology, mainly solves the low problem of light extraction efficiency in the light emitting structures of the ultraviolet light-emitting diode back side.
The invention discloses a kind of high reflection ultraviolet light-emitting diode (UV-LED) device, this device comprises successively: substrate (11), AlN nucleating layer (12), N-shaped AlGaN barrier layer (13), active area (14), p-type AlGaN barrier layer (15) and p-type GaN emit layer (16); Wherein, be manufactured with high reflective film (110) on described p-type AlGaN barrier layer, be used for and go out from the device bottom emission after the light reflection.
The invention also discloses a kind of manufacture method of high reflection ultraviolet light-emitting diode device, it comprises:
Step 1, growing epitaxial structure, described epitaxial structure comprises that according to order from bottom to top p-type AlGaN barrier layer (152), p-type GaN that low temperature AI N nucleating layer (121), high temperature AlN template layer (122), N-shaped AlGaN barrier layer (13), active area (14), high Al contents p-type AlGaN barrier layer (151), low Al component p-type AlGaN barrier layer or Al content gradually variational reduce emit layer (16);
Step 2, emit layer (16) to be etched to N-shaped AlGaN barrier layer (13) from the part p-type GaN at top, form N-shaped AlGaN table top;
Step 3, emit the upper photoetching of layer (16) to form window region at the p-type GaN that is not etched, and adopt the surface of the p-type AlGaN barrier layer (152) that the described window region of chloro ICP technique etching to low Al component p-type AlGaN barrier layer or Al content gradually variational reduce or below the surface, form reflection windows, remain with a part of p-type GaN in wherein said window region and emit layer (16);
Step 4, make the N-shaped electrode pattern by lithography on described N-shaped AlGaN table top, and at described N-shaped electrode pattern district's evaporation N-shaped metal ohmic contact, form N-shaped Ohm contact electrode (17);
Step 5, emit layer (a 16) top light to carve the p-type electrode pattern at the p-type GaN that keeps, and at described p-type electrode pattern district evaporation p-type metal ohmic contact, form p-type Ohm contact electrode (18);
Step 6, make high reflective film in described reflection windows, complete the making of described high reflection ultraviolet light-emitting diode.
The high reflection of above-mentioned AlGaN base disclosed by the invention ultraviolet light-emitting diode and preparation method thereof, it is applied to the ultraviolet light-emitting diode of inverted structure, upside-down mounting film or vertical stratification, part p-GaN layer is etched away, make the light extraction efficiency that the high reflection mirror structure with high reflectance (＞80%) improves light-emitting diode; Make the p-type Ohm contact electrode on the p-GaN layer of etching not, make device both have good ohm contact performance, have again higher ultraviolet reflectivity, thereby under the condition of the electric property preferably of assurance ultraviolet light-emitting diode, improve the light extraction efficiency of light-emitting diode.
Emitted the light of layer absorption through the reflection of too high reflective film by p-type GaN in the ultraviolet light-emitting diode that the present invention proposes, sent by the bottom, improved greatly the power efficiency of emergent light.Said method disclosed by the invention can effectively improve the light extraction efficiency of ultraviolet light-emitting diode, can be used for air and water and purifies, medical treatment and biomedicine, white light and special lighting, the fields such as space communication.
Description of drawings
Fig. 1 is cross section structure and the schematic top plan view of the high reflection of AlGaN base ultraviolet light-emitting diode device in the present invention;
Fig. 2 is the epitaxial structure schematic diagram of the high reflection of AlGaN base ultraviolet light-emitting diode device in the present invention;
Fig. 3 is that in the present invention, AlGaN base height reflects structural change schematic diagram in ultraviolet light-emitting diode device electrode manufacturing process;
Fig. 4 is the structural representation of having made in the high reflection of AlGaN base ultraviolet light-emitting diode device in the present invention after high reflective film.
Fig. 5 is the manufacture method flow chart of the high reflection of AlGaN base ultraviolet light-emitting diode device in the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention discloses the high reflection of a kind of AlGaN base ultraviolet light-emitting diode device.
Fig. 1 shows cross section and the plan structure schematic diagram of the high reflection of described AlGaN base disclosed in this invention ultraviolet light-emitting diode device.As shown in Figure 1, the high reflection of described AlGaN base ultraviolet light-emitting diode device comprises:
N-shaped AlGaN barrier layer 13, it adopts mocvd method to be grown on the high temperature template layer 122 of AlN nucleating layer 12, and its thickness is 1-5 μ m, is preferably 3 μ m;
P-type AlGaN barrier layer 15, it adopts mocvd method to be grown on active area 14, p-type AlGaN barrier layer 15 is divided into two-layer, ground floor is high Al contents p-type AlGaN layer 151, it is produced on the top of active area 14, the p-type AlGaN layer 152 that the second layer reduces for hanging down Al component p-type AlGaN layer or Al content gradually variational, it is produced on the top of high Al contents p-type AlGaN layer 151; All higher than the Al constituent content of potential well AlGaN in active area 14, gross thickness requires greater than 0.5 λ the Al constituent content of p-type AlGaN barrier layer 15, is preferably between 40-100nm, is preferably 70nm;
Wherein, λ is the wavelength of radiated electromagnetic wave in this kind material of active area 14.Therefore in the description of various materials and thickness with respect to the size of the center radiation wavelength of active area 14, need in its concrete calculation Design with reference to the refractive index impact of this material on the center radiation wavelength of active area 14.For example, the center radiation wavelength of active area 14 is 300nm in a vacuum, and the specific refractivity of supposing material is 3, the material thickness of 0.5 λ-description be 50nm (=0.5*300/3);
P-type GaN emits layer 16, it adopts mocvd method to be grown on the low Al component p-type AlGaN layer of p-type AlGaN barrier layer 15 or p-type AlGaN layer (152) that the Al content gradually variational reduces, and its material is GaN, and its thickness is 100nm-4000nm, be preferably 200nm, its hole concentration is 5 * 10
17cm
-3-10
19cm
-3, be preferably 8 * 10
18cm
-3
N-shaped Ohm contact electrode 17, it adopts the mode of vacuum evaporation or sputter to be produced on N-shaped AlGaN barrier layer 13.Wherein, before making N-shaped Ohm contact electrode 17, need to emit the positive mesa region of selecting of layer 16 to etch into N-shaped AlGaN barrier layer 13 from p-type GaN by mesa technique, and described N-shaped Ohm contact electrode 17 is produced on N-shaped AlGaN barrier layer 13 table tops that etch; Require N-shaped AlGaN barrier layer 13 table tops after etching lower than the bottom 100nm-4000nm of N-shaped AlGaN barrier layer 13 tops/active area 14, preferred 800nm, and keep a segment distance in the middle of the sidewall that requires N-shaped Ohm contact electrode 17 and mesa etch to form, be generally 5-100 μ m, preferred 15 μ m;
Described N-shaped Ohm contact electrode 17 selects metal to make, can be Ti/Al/Ti/Au, Ti/Al/Pt/Au, V/Al/V/Au, a kind of in Ti/Al/Ni/Au, each layer thickness scope is followed successively by 50-600nm/100-3000nm/50-600nm/200-2000nm, and annealing conditions is 450 ℃-950 ℃ of annealing temperatures, annealing time 20s-120s, air or N
2Atmosphere; Preferably, its thickness is 200nm/600nm/200nm/1000nm, and annealing conditions is 800 ℃, 60s;
P-type ohmic contact layer 18, it adopts evaporation or the mode of sputter to be produced on p-type GaN to emit on layer 16.Described p-type ohmic contact layer 18 selects metal to make, and can be Ni/Ag, a kind of in Ni/Au, and thickness is 5-200nm/5-400nm, annealing conditions is 400 ℃-600 ℃ of annealing temperatures, annealing time 20-120s, air or N
2Atmosphere; Preferred Ni/Au, its thickness is 50nm/100nm, annealing conditions is 550 ℃, 60s;
SiO
2Side wall protective layer 19, it adopts the mode of PECVD to be produced on p-type GaN to emit on layer 16 sidewall, and thickness is 20-500nm, is preferably 200nm; For reaching desirable sidewall protection effect, require SiO
2Side wall protective layer 19 is except being produced on p-type GaN emits on layer 16 sidewall, its top is extended cover part p-type GaN and is emitted layer 16 top, the low Al component p-type AlGaN floor in reflection windows district, cover part or the p-type AlGaN floor 152 that the Al content gradually variational reduces are extended in its underpart, extension width 5-50 μ m, preferred 10 μ m;
High reflective film 110, it adopts the mode of evaporation, sputter or plating to be produced on the low Al component p-type AlGaN barrier layer in reflection windows district or p-type AlGaN barrier layer 152 that the Al content gradually variational reduces, with SiO
2Side wall protective layer 19 sidewalls can join or keep the space less than 50 μ m, preferred 10 μ m, and and SiO
2Side wall protective layer 19 extensions, bottom join.When making described high reflective film 110, at first p-type GaN to be emitted and carry out etching on layer region, p-type AlGaN barrier layer 15 reflection windows that obtain arbitrary shape are regional, then make high reflective film 110 in this zone.Described high reflective film is for having the bilayer film high reflection mirror structure of high reflectance (＞80%), and this ultraviolet light-emitting diode device utilizes this high reflection mirror structure that the light reflection is rear from the device bottom emission, to improve light extraction efficiency.The ground floor material of described high reflective film is metallic aluminium, thickness is 5-3000nm, be preferably 200nm, it is produced on p-type AlGaN layer 152 surface that low Al component p-type AlGaN layer or Al content gradually variational reduce or wherein, the second layer material of high reflective film is MgF2, LiF, a kind of in Pt metal or metal Rh, but be not limited in above different materials combination, its thickness is 5-3000nm, be preferably 250nm, it is produced on the first floor height reflective film.
Fig. 2 shows the epitaxial structure schematic diagram of the high reflection of above-mentioned AlGaN base ultraviolet light-emitting diode device in the present invention.As shown in Figure 2, described epitaxial structure comprises: substrate 11, AlN nucleating layer 12, N-shaped AlGaN barrier layer 13, active area 14, p-type AlGaN barrier layer 15 and p-type GaN emit layer 16.
The invention also discloses the manufacture method of a kind of AlGaN base high reflection ultraviolet light-emitting diode (UV-LED) device.
Fig. 3 shows the basic high structural change figure in ultraviolet light-emitting diode (UV-LED) device manufacturing process that reflects of AlGaN in the present invention.Fig. 5 shows the manufacture method flow chart of a kind of AlGaN base high reflection ultraviolet light-emitting diode disclosed by the invention (UV-LED) device.As shown in Figure 5, described method comprises:
Steps A, growing epitaxial structure.
On sapphire substrate 11, utilize MOCVD technique, the p-type AlGaN barrier layer 152, the p-type GaN that reduce according to from bottom to top order growing low temperature AlN nucleating layer 121, high temperature AlN template layer 122, N-shaped AlGaN barrier layer 13, active area 14, high Al contents p-type AlGaN barrier layer 151, low Al component p-type AlGaN barrier layer or Al content gradually variational emit layer 16, complete the making of described ultraviolet light-emitting diode device epitaxial structure, described epitaxial structure as shown in Figure 2;
Step B, making electrode.Fig. 3 shows the variation schematic diagram of ultraviolet light-emitting diode structure described in the electrode fabrication process, and it specifically comprises:
Step (B1), adopt ICP or RIE technique from the partial etching that p-type GaN is emitted layer 16 at top to N-shaped AlGaN barrier layer 13, form N-shaped AlGaN table top; Wherein, N-shaped AlGaN barrier layer 13 table tops after institute's etching are lower than the bottom 100nm-4000nm of N-shaped AlGaN barrier layer 13 tops/active area 14, preferred 800nm;
Step (B2), the reflection windows district that emits photoetching arbitrary shape on floor 16 at the p-type GaN that is not etched, and adopt the surface of the p-type AlGaN barrier layer 152 that chloro ICP technique etching reflection windows district to low Al component p-type AlGaN barrier layer or Al content gradually variational reduce or below the surface, form the reflection windows of arbitrary shape; Wherein the reflection windows district emits relative position and window shape on floor 16 to select arbitrarily at the p-type GaN that is not etched, and needs to keep a part of p-type GaN and emit layer 16 not to be etched yet, so that the later stage emits layer 16 top to make p-type electrodes at the p-type GaN that keeps;
Step (B3), emit layer 16 sidewall to make the SiO2 passivation layer at p-type GaN, its embodiment is as follows: photoetching reflection windows district and the p-type GaN of etching not emit floor 16 position, boundary, choose width 10-100 μ m, be preferably 30 μ m, adopt pecvd process to make the SiO2 passivation layer, form SiO2 side wall protective layer 19, protection p-type GaN emits the sidewall of layer 16; For reaching desirable sidewall protection effect, require SiO
2Side wall protective layer 19 is except being produced on p-type GaN emits on layer 16 sidewall, its top is extended cover part p-type GaN and is emitted layer 16 top, the surface that the low Al component p-type AlGaN floor in extension reflection windows district, cover part, its underpart or the p-type AlGaN floor 152 that the Al content gradually variational reduces form after (B2) step etching, extension width 5-50 μ m, preferred 10 μ m;
Step (B4), make the figure of N-shaped electrode by lithography on described N-shaped AlGaN table top, adopt electron beam evaporation process, at electrode pattern district's evaporation N-shaped metal ohmic contact, form N-shaped Ohm contact electrode 17; Described N-shaped Ohm contact electrode 17 and the middle segment distance that keeps of sidewall that mesa etch forms are generally 5-100 μ m, preferred 15 μ m;
Step (B5), do not emit layer 16 top light to carve the figure of p-type electrode at the p-type GaN that is covered by SiO2 side wall protective layer 19, adopting electron beam evaporation process, at electrode pattern district's evaporation p-type metal ohmic contact, forming p-type Ohm contact electrode 18.
Wherein, described B4 step also can advance to step B1 and carries out after completing.
Step C, making highly reflecting films structure.Fig. 4 shows the structural representation of having made described ultraviolet light-emitting diode device after high reflective film.The flow process of making described high reflective film is specific as follows:
The mode that adopts evaporation coating, sputter coating or plating in the reflection windows district is a kind of in sequentially built the first floor height reflective film metal A l and the second floor height reflective film MgF2, LiF, Pt metal or metal Rh successively, but be not limited in above different materials combination; Wherein, the first floor height reflective film is produced on the p-type AlGaN barrier layer 152 that the low Al component p-type AlGaN barrier layer of window region or Al content gradually variational reduce, and the second floor height reflective film is produced on the first floor height reflective film, completes the making of high reflective film 110; Finally complete the making of ultraviolet light-emitting diode.
Described ultraviolet light-emitting diode is A1
xGa
1-xThe material of N base, wherein 0≤x≤1;
The high reflection of above-mentioned AlGaN base ultraviolet light-emitting diode device, its ultraviolet light centre wavelength of launching in air is preferably 280nm between 200-365nm.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (18)
1. one kind high reflection ultraviolet light-emitting diode (UV-LED) is installed, and this device comprises successively: substrate (11), AlN nucleating layer (12), N-shaped AlGaN barrier layer (13), active area (14), p-type AlGaN barrier layer (15) and p-type GaN emit layer (16); Wherein, be manufactured with high reflective film (110) on described p-type AlGaN barrier layer (15), be used for and go out from the device bottom emission after the light reflection.
2. device as claimed in claim 1, is characterized in that, described high reflective film (110) is for having reflectivity greater than 80% bilayer film high reflection mirror structure.
3. device as claimed in claim 1, is characterized in that, the ground floor material of described high reflective film (110) is metallic aluminium, and thickness is 5-3000nm, and it is produced on p-type AlGaN barrier layer (15), and second layer material is MgF
2, any in LiF, Pt metal or metal Rh, thickness is 5-3000nm, and the second floor height reflective film is produced on the first floor height reflective film.
4. device as claimed in claim 1, is characterized in that, the material of described substrate (11) is sapphire, SiC or AlN.
5. device as claimed in claim 1, is characterized in that, described ultraviolet light-emitting diode device is Al
xGa
1-xN sill, wherein 0≤x≤1.
6. device as claimed in claim 1, is characterized in that, described active area (14) comprises a quantum well structure at least.
7. device as claimed in claim 1, it is characterized in that, described AlN nucleating layer (12) is divided into two-layer, ground floor is the low temperature nucleating layer (121) of growth temperature between 550 ℃-750 ℃, thickness is 20-100nm, the second layer is the high temperature template layer (122) of growth temperature between 1100 ℃-1250 ℃, and thickness is 500-5000nm.
8. device as claimed in claim 1, it is characterized in that, described p-type AlGaN barrier layer (15) is divided into two-layer, ground floor is high Al contents p-type AlGaN layer (151), thickness is 5-500nm, and it is produced on the top of active area (14), the p-type AlGaN layer (152) that the second layer reduces for hanging down Al component p-type AlGaN layer or Al content gradually variational, thickness is 5-200nm, and it is produced on the top of high Al contents p-type AlGaN layer (151).
9. device as claimed in claim 6, is characterized in that, the Al constituent content of described p-type AlGaN barrier layer (15) is all higher than the Al constituent content of potential well AlGaN in active area (14) quantum well structure.
10. device as claimed in claim 1, is characterized in that, described high reflective film (110) making after etching away part p-type GaN to emit layer (16) forms.
11. device as claimed in claim 10, it is characterized in that, described highly reflecting films (110) are by described p-type GaN being emitted floor (16) etching obtain the reflection windows district, and then make in described reflection windows district and form, and the bottom in described reflection windows district is positioned at p-type AlGaN floor (152) surface that low Al component p-type AlGaN floor or Al content gradually variational reduce or wherein.
12. device as claimed in claim 1 is characterized in that, described high reflective film (110) adopts the mode of evaporation coating, sputter coating or plating to make.
13. device as claimed in claim 1 is characterized in that, the ultraviolet light centre wavelength that this ultraviolet light-emitting diode device is launched in air is between 200-365nm.
14. device as claimed in claim 1 is characterized in that, this device also comprises SiO
2Side wall protective layer (19), its be produced on described p-type GaN emit the layer (16) sidewall on, thickness is 20-500nm.
15. device as claimed in claim 1, it is characterized in that, described device also comprises N-shaped ohmic contact layer (17) and p-type ohmic contact layer (18), described N-shaped ohmic contact layer (17) is produced on described N-shaped AlGaN barrier layer (14), and described p-type ohmic contact layer (18) is produced on described p-type GaN and emits on layer (16).
16. the manufacture method of one kind high reflection ultraviolet light-emitting diode device, it comprises:
Step 1, growing epitaxial structure, described epitaxial structure comprises that according to order from bottom to top p-type AlGaN barrier layer (152), p-type GaN that low temperature AI N nucleating layer (121), high temperature AlN template layer (122), N-shaped AlGaN barrier layer (13), active area (14), high Al contents p-type AlGaN barrier layer (151), low Al component p-type AlGaN barrier layer or Al content gradually variational reduce emit layer (16);
Step 2, emit layer (16) to be etched to N-shaped AlGaN barrier layer (13) from the part p-type GaN at top, form N-shaped AlGaN table top;
Step 3, emit the upper photoetching of layer (16) to form window region at the p-type GaN that is not etched, and adopt the surface of the p-type AlGaN barrier layer (152) that the described window region of chloro ICP technique etching to low Al component p-type AlGaN barrier layer or Al content gradually variational reduce or below the surface, form reflection windows, remain with a part of p-type GaN in wherein said window region and emit layer (16);
Step 4, make the N-shaped electrode pattern by lithography on described N-shaped AlGaN table top, and at described N-shaped electrode pattern district's evaporation N-shaped metal ohmic contact, form N-shaped Ohm contact electrode (17);
Step 5, emit layer (a 16) top light to carve the p-type electrode pattern at the p-type GaN that keeps, and at described p-type electrode pattern district evaporation p-type metal ohmic contact, form the p-type electrode;
Step 6, make high reflective film in described reflection windows, complete the making of described high reflection ultraviolet light-emitting diode.
17. method as claimed in claim 16 is characterized in that, also comprises after step 3:
The described reflection windows of photoetching district and the position, boundary that the p-type GaN that keeps emits floor (16) make the SiO2 passivation layer to emit layer (16) sidewall at the p-type GaN that is kept, to form SiO2 side wall protective layer (19).
18. method as claimed in claim 17; it is characterized in that; the top of described SiO2 side wall protective layer (19) is also extended the p-type GaN that covering keeps and is emitted layer (16) top sides along part, and the low Al component p-type AlGaN floor in described reflection windows district, cover part or the p-type AlGaN floor (152) that the Al content gradually variational reduces are extended in its underpart.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682012A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | Deep UV (Ultraviolet) LED and preparation method thereof |
| CN105405915A (en) * | 2015-12-04 | 2016-03-16 | 华南理工大学 | InGaN-based blue light detector and preparation method therefor |
| CN108630793A (en) * | 2018-04-26 | 2018-10-09 | 厦门市三安光电科技有限公司 | A kind of light emitting diode |
| CN112186085A (en) * | 2020-10-09 | 2021-01-05 | 河北工业大学 | Deep ultraviolet semiconductor light emitting diode without pGaN (pGaN) at edge and preparation method thereof |
| CN112510126A (en) * | 2020-11-17 | 2021-03-16 | 杭州士兰明芯科技有限公司 | Deep ultraviolet light emitting diode and manufacturing method thereof |
| CN113078248A (en) * | 2021-03-30 | 2021-07-06 | 芜湖启迪半导体有限公司 | UVC semiconductor light-emitting device and manufacturing method thereof |
| CN114864783A (en) * | 2022-03-15 | 2022-08-05 | 嘉兴鼎镓半导体有限公司 | Ultraviolet light-emitting diode structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040144986A1 (en) * | 2003-01-23 | 2004-07-29 | Epitech Corporation, Ltd. | Light emitting diode having anti-reflection layer and method of making the same |
| JP2007103689A (en) * | 2005-10-05 | 2007-04-19 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
| CN101515616A (en) * | 2009-03-31 | 2009-08-26 | 西安电子科技大学 | Multiple quantum well uv-LED device on SiC substrate and manufacturing method |
| CN101527342A (en) * | 2009-03-31 | 2009-09-09 | 西安电子科技大学 | Ultraviolet LED element and fabricated method of AlGaN base sapphire substrate |
| CN102185064A (en) * | 2011-04-19 | 2011-09-14 | 武汉华炬光电有限公司 | AlGaN base deep ultraviolet light-emitting diode (LED) device using multiple quantum well electronic barrier layer to improve luminescent efficiency and manufacturing method of AlGaN base deep ultraviolet LED device |
| CN102709429A (en) * | 2012-05-23 | 2012-10-03 | 中国科学院半导体研究所 | Ultraviolet light-emitting diode chip with reflection ohmic contact electrode |
-
2013
- 2013-04-07 CN CN2013101172176A patent/CN103165775A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040144986A1 (en) * | 2003-01-23 | 2004-07-29 | Epitech Corporation, Ltd. | Light emitting diode having anti-reflection layer and method of making the same |
| JP2007103689A (en) * | 2005-10-05 | 2007-04-19 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
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