CN103149949B - A kind of gas micro controller based on paltie effect - Google Patents
A kind of gas micro controller based on paltie effect Download PDFInfo
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- CN103149949B CN103149949B CN201310008314.1A CN201310008314A CN103149949B CN 103149949 B CN103149949 B CN 103149949B CN 201310008314 A CN201310008314 A CN 201310008314A CN 103149949 B CN103149949 B CN 103149949B
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Abstract
The present invention discloses a kind of gas micro controller based on paltie effect, including a reducer, one gas feed, one gas outlet, at least one Peltier semiconductor device is heat sink with at least one, gas enters reducer from gas feed, after the throttling action of reducer, the propellant of micrometeor is flowed out from gas outlet, the two sides of Peltier semiconductor device is respectively mounted reducer and heat sink, by Peltier semiconductor device being energized and being controlled, can carry out reducer actively heating, active cooling and insulation operation, reducer is made quickly to regulate and stabilizing gas flux on a large scale.Relative to the common heater strip little flow controller that actively heating, power-off passively cool down, reducer can be carried out actively heating and active cooling by the little flow controller of the present invention, extension reducer range of accommodation, improve reducer governing speed, and Peltier semiconductor device is adding heat aging rate higher than heater strip.
Description
Technical field
The present invention relates to the adjustable micrometeor gas flow controller of spacecraft propulsion system, it is adaptable to the space propulsion systems such as helium, xenon, argon, nitrogen are commonly used the micrometeor of gas and controlled, and can be used for the field such as electric propulsion, cold air propelling.
Background technology
The field of the micrometeor gaseous propellants such as the electric propulsion of the spacecraft such as satellite, deep space probe use, microthrust cold air propelling, it is required for the gas of higher for the pressure in gas cylinder (or tank) (such as 15MPa) becoming the micrometeor gas needed for thruster (such as thrust 40mN, the hall thruster of specific impulse 1600s by Propellant Supply device, anode propellant flow rate is 2.3mg/s, and negative electrode propellant flow rate is 0.25mg/s).This Propellant Supply device is typically made up of the pressure adjusting module of upstream and the Flow-rate adjustment module two parts in downstream, pressure adjusting module connects gas cylinder, connects thruster under Flow-rate adjustment module.Elevated pressures in gas cylinder is become relatively low, more stable pressure (such as 0.2MPa) by pressure adjusting module.The propellant throttling of the relatively steady pressure that pressure adjusting module is then exported by Flow-rate adjustment module, is adjusted to the propellant of micrometeor, and by regulation micrometeor size the most within the specific limits, to adapt to the different demands of thruster.
Flow-rate adjustment module is typically made up of valve (electromagnetic valve, latching valve etc.) and the flow controller etc. controlling propellant break-make.Flow controller is to realize the supply of micrometeor gas and the key component of regulation, has throttling and certain Flow-rate adjustment ability.
The micrometeor gas flow controller of the space propulsion systems such as the most domestic and international conventional cold air propelling, electric propulsion can be divided into fixed structure throttling and varistructure throttling by throttle style.Fixed structure throttling refers to be formed the runner of fixed structure with fixed structure, it is achieved gas throttling, exports micrometeor gas, specifically has:
1) porous material, the minim channel formed by porous material realizes gas throttling；
2) orifice plate, by one or more series connection, have the orifice plate of micron dimension diameter aperture to realize gas throttling；
3) capillary tube, utilize the micro-aperture of capillary tube and longer length to realize gas throttling, by controlling aperture and the length of capillary tube, it is achieved required gas throttling；
4) etching fluid channel, utilizes the fluid channel of the formation such as chemical etching, it is achieved gas throttling.
Varistructure throttling refers to utilize movable part, the size of regulation gas flow, thus realizes gas throttling, exports micrometeor gas, specifically has:
1) proportional flow electromagnetic valve, by o controlling opening of valve, thus realizes micrometeor regulation.
2) utilizing the valve of the functional material such as magnetostriction or piezoelectric ceramics, utilize functional material under the effect of magnetic field or electric field, it is achieved the minor variations of length or shape realizes the minor motion of spool, regulation gas flow size realizes throttling.
Varistructure throttle style utilizes the feedback of the electric current etc. of flow or electric thruster, controls the aperture of spool, thus realizes the regulation of micrometeor.
For fixed structure throttle style, thermal valve principle is the most typically used to realize micrometeor regulation.As Europe AMPAC develop xenon flow controller, the 10W spiral heater by the reducer bringing outlet nozzle into, being wrapped on reducer and encapsulation heater and reducer, can form as the ceramic material being mechanically fixed interface.Regulation heater voltage size, heater power can be from 0～10W change, exemplary traffic range of accommodation 0.05～20mg/s.
The operation principle of thermal valve flow controller is as follows:
Assume that gas source temperature is ambient temperature, for certain working media gas, inlet pressure one timing, the gas flow of this thermal valve flow controller is relevant with the temperature of reducer, when heater does not works, when reducer temperature is equal to ambient temperature, its flow is exactly maximum stream flow at this ambient temperature.There are following three kinds of duties:
1) flow is actively turned down: when flow reduces, heated by spiral heater, reducer temperature rises, gas temperature raises and causes viscosity to become big, some reducers (such as porous material reducer) flow resistance the most substantially becomes big, gas flow diminishes, and this belongs to actively turns flow down, response time about several seconds or tens of second；
2) flow is passively tuned up: when flow needed when little change is big, heater quits work, heat dissipates, show and diminish, gas flow becomes big, and this belongs to and passively tunes up flow, response time about tens seconds, now the maximum stream flow of flow controller is exactly reducer temperature when returning to ambient temperature, the maximum stream flow at a temperature of respective environment；
3) a certain flow is maintained: when from a certain status adjustment to other flow, when by actively turning flow down or passively tuning up flow, when making flow controller flow arrive target flow, regulation heater voltage is (during as used continued power to control, voltage variable, realize the change of 0～peak power) or dutycycle (as use pulse current control time, voltage is constant, realize the change of mean power by regulation dutycycle) or two kinds of methods apply simultaneously, make reducer temperature maintain the temperature that this flow is corresponding all the time, make flow constant.
Visible, existing actively regulate the flow controller of flow by heater heating and the most actively tune up the function of flow, because the temperature of reducer can only be heated by heater at ambient temperature, when heater does not works, reducer temperature at most can only drop to ambient temperature, and cannot be below ambient temperature, limit the performance of flow controller.
Peltier semiconductor device is to utilize paltie effect (Peltiereffect) to carry out the semiconductor device freezing and heating, and can do the shapes such as squarely, circle, annular as required, and Fig. 1 is square and two kinds of Peltier semiconductor device profiles of annular.Paltie effect refers to when electric current passes through thermocouple, and a node distributes heat, makes this junction temperature reduce, and another node absorbs heat, makes the phenomenon that this junction temperature raises.Peltier semiconductor device is made up of two-layer heat-conducting substrate and the multipair thermocouple of inside, wire etc..These thermocouples are connected on circuit, in parallel on conduction of heat, thus when energising, the end region temperature change that thermocouple connects a substrate is consistent, it is achieved the cooling of this substrate or intensification.Thermocouple typically uses the p-type of incorporation trace element and N-type semiconductor to be in series.In order to extend the life-span of Peltier semiconductor device, can carry out circumferential seal process between device two-layer heat-conducting substrate, encapsulant can be with silica gel or epoxy resin etc..In order to improve refrigerating capacity or heating capacity, the form of plural serial stage can be used to form multistage Peltier semiconductor device.
After the energising of Peltier semiconductor device, surface refrigeration, a surface heats, as long as changing the sense of current, both can realize refrigeration, having heated the transformation in face, and heating efficiency is more than 1, changes size of current, i.e. scalable refrigeration and heat power.Peltier semiconductor device volume is little, lightweight, mechanical movable part, noiselessness, easy to use, and a device i.e. may replace the heating of separation and hot cooling system, and the temperature range in cold end and hot junction is up to 80～200 DEG C.
Peltier semiconductor device is widely used to the field such as the cooling of the refrigeration of portable refrigerator, semiconductor chip etc. and the cooling and warming of water dispenser, column oven etc..
Summary of the invention
The present invention is directed to the flow rate adjusting method of the flow controller of above-mentioned fixed structure throttle style, a kind of gas micro controller based on paltie effect is provided, by Peltier semiconductor device being energized and being controlled, can carry out reducer actively heating, active cooling and insulation operation, make reducer quickly regulate and stabilizing gas flux on a large scale in.Relative to the common heater strip little flow controller that actively heating, power-off passively cool down, reducer can be carried out actively heating and active cooling by the little flow controller of the present invention, extension reducer range of accommodation, improve reducer governing speed, and Peltier semiconductor device is adding heat aging rate higher than heater strip.
For reaching above-mentioned purpose, the present invention uses technical scheme as follows:
A kind of gas micro controller based on paltie effect, including a reducer, gas feed, gas outlet, at least one Peltier semiconductor device with at least one is heat sink；Gas enters reducer from gas feed, after the throttling action of reducer, flows out the propellant of micrometeor from gas outlet；The two sides of Peltier semiconductor device is respectively mounted reducer and heat sink, described controller controls Peltier semiconductor device power demand and the sense of current according to feedback signal, carry out reducer actively heating, active cooling and insulation operation, make reducer can quickly regulate also stabilizing gas flux on a large scale in.
Relative to using heater strip actively heating, the micrometeor gas flow controller of passive cooling, the micrometeor gas flow controller based on paltie effect of the present invention has the advantage that
1) using a device to realize actively heating and active cooling, gas flow range of accommodation is wider；
2) can realize quickly increasing flow, utilize the refrigerating function of Peltier semiconductor device, carry out the fast-refrigerating of throttling device, it is achieved flow increases function.
3) Peltier semiconductor device is when heating throttling device, and the efficiency of heating surface is more than 1, and under equal electrical power, firing rate exceedes heater strip, and flow reduction speed is faster；And under equal flow reduction speed, under i.e. equal firing rate, electrical power is less than heater strip.
Accompanying drawing explanation
Fig. 1 is Peltier semiconductor device profile, and wherein figure (a) is square Peltier semiconductor device profile, and figure (b) is annular Peltier semiconductor device profile；
Fig. 2 is micrometeor gas flow controller structural representation based on paltie effect；
Fig. 3 is micrometeor gas flow-control principle schematic based on paltie effect；
Fig. 4 is the horizontal dress Peltier little flow controller structural representation using a Peltier semiconductor device；
Fig. 5 is the horizontal dress Peltier little flow controller structural representation using two Peltier semiconductor device；
Fig. 6 is the horizontal dress Peltier little flow controller structural representation using three Peltier semiconductor device；
Fig. 7 is the perpendicular dress Peltier little flow controller structural representation using a Peltier semiconductor device；
Fig. 8 is the perpendicular dress Peltier little flow controller structural representation using two Peltier semiconductor device.
Detailed description of the invention
Shown in Fig. 1, for square (as shown in figure a) and two kinds of Peltier semiconductor device profiles of annular (as schemed shown in b), Peltier semiconductor device is made up of two-layer heat-conducting substrate A, B and the multipair thermocouple of inside, wire C.In order to extend the life-span of Peltier semiconductor device, can be to carrying out circumferential seal process between device two-layer heat-conducting substrate, encapsulant D can be with silica gel or epoxy resin etc..
Shown in Fig. 2, for micrometeor gas flow controller basic structure schematic diagram based on paltie effect.Little flow controller is made up of reducer 1, gas feed 2, gas outlet 3, Peltier semiconductor device 4 and heat sink 5, is fixed with temperature sensor 6 by modes such as gluing, screw connections on reducer 1.Peltier semiconductor device 4 one side is adjacent to reducer 1, another side install heat radiation, heat sink the 5 of thermal-arrest.For improving heat-transfer effect, Peltier semiconductor device two sides is all enclosed heat-conducting silicone grease etc. and is prone to the medium of heat conduction.The heat sink temperature difference being conducive to reducing Peltier semiconductor device two sides, extends the life-span of this device, and improves the temperature regulating range of reducer.
Shown in Fig. 3, for micrometeor gas flow-control principle schematic based on paltie effect.The temperature sensor being arranged on reducer is in order to monitor the temperature of throttling device.
During the work of this little flow controller, control device 9 and make little flow controller export necessary flow according to instruction.Power supply 7 provides power demand for Peltier semiconductor device 4.Control device 9, according to feedback signal 8, controls Peltier semiconductor device 4 power demand and the sense of current, makes reducer 1 reach uniform temperature, the propellant of output necessary flow.Feedback signal can be temperature sensor output signal, it is also possible to be flow signal or the current signal of electric thruster of the flowmeter survey of flow controller downstream.
Fig. 4 is the detailed description of the invention one of the present invention
The heat-conducting substrate of the Peltier semiconductor device of the little flow controller of this embodiment is arranged on throttling device (being " horizontal dress Peltier little flow controller " referred to here as this little flow controller) along gas flow direction, and using a square Peltier semiconductor device, Fig. 4 is its structural representation.Little flow controller is made up of reducer 1, gas feed 2, gas outlet 3, Peltier semiconductor device 4, heat sink 5, temperature sensor 6, and the two sides of Peltier semiconductor device is respectively reducer and heat sink.Heat sink is circular or square, wants to cover Peltier quasiconductor heat-conducting substrate with the size in the face of Peltier semiconductor device laminating.Peltier semiconductor device, temperature sensor can be fixed on reducer by modes such as gluing, screw connections, heat sink can be fixed on Peltier semiconductor device by modes such as gluing, screw connections, it is possible to the mode such as be connected by screw is affixed directly on reducer.
Fig. 5 is the detailed description of the invention two of the present invention
This embodiment is horizontal dress Peltier little flow controller, and uses two square Peltier semiconductor device, and Fig. 5 is its structural representation.Little flow controller is made up of reducer 1, gas feed 2, gas outlet 3, Peltier semiconductor device 4, heat sink 5, temperature sensor 6, and the two sides of Peltier semiconductor device is respectively reducer and heat sink.Heat sink is circular or square, and center has round center hole, wants to cover Peltier quasiconductor heat-conducting substrate with the size in the face of Peltier semiconductor device laminating.Peltier semiconductor device, temperature sensor can be fixed on reducer by modes such as gluing, screw connections, heat sink can be fixed on Peltier semiconductor device by modes such as gluing, screw connections, it is possible to the mode such as be connected by screw is affixed directly on reducer.Two Peltier semiconductor device electrically can connect in parallel or series, and consistent towards the heat-conducting substrate temperature variations of reducer.
Relative to the horizontal dress Peltier little flow controller using a Peltier semiconductor device, the horizontal dress Peltier little flow controller using two Peltier semiconductor device can make reducer be uniformly heated, improve flow control accuracy, and under conditions of each Peltier semiconductor device electrical power is identical, increase cooling and warming ability, improve reducer range of temperature and pace of change, thus improve the accuracy and speed that micrometeor controls.
Fig. 6 is the detailed description of the invention three of the present invention
This embodiment is horizontal dress Peltier little flow controller, and uses three square Peltier semiconductor device, and Fig. 6 is its structural representation.Little flow controller is made up of reducer 1, gas feed 2, gas outlet 3, Peltier semiconductor device 4, heat sink 5, temperature sensor 6, and the two sides of Peltier semiconductor device is respectively reducer and heat sink.Peltier semiconductor device, temperature sensor can be fixed on reducer by modes such as gluing, screw connections, heat sink can be fixed on Peltier semiconductor device by modes such as gluing, screw connections, it is possible to the mode such as be connected by screw is affixed directly on reducer.Three Peltier semiconductor device electrically can connect in parallel or series, and consistent towards the heat-conducting substrate temperature variations of reducer.
Relative to the horizontal dress Peltier little flow controller using one and two Peltier semiconductor device, use the horizontal dress Peltier little flow controller of three Peltier semiconductor device, under conditions of each Peltier semiconductor device electrical power is identical, increase cooling and warming ability, improve reducer range of temperature and pace of change, thus improve the accuracy and speed that micrometeor controls.
Fig. 7 is the detailed description of the invention four of the present invention
The little flow controller of this embodiment, its Peltier semiconductor device installed surface is perpendicular to gas flow direction and is arranged on reducer (being " perpendicular dress Peltier little flow controller " referred to here as this little flow controller), and using an annular Peltier semiconductor device, Fig. 7 is its structural representation.Little flow controller is made up of reducer 1, gas feed 2, gas outlet 3, Peltier semiconductor device 4, heat sink 5, temperature sensor 6, and heat sink, Peltier semiconductor device, reducer are installed in series along gas flow direction.Heat sink is circular or square, and center has round center hole, wants to cover Peltier quasiconductor heat-conducting substrate with the size in the face of Peltier semiconductor device laminating.The centre bore of Peltier semiconductor device is installed through gas access or gas outlet so that it is heat-conducting substrate is installed with reducer laminating.Heat sink centre bore passes gas access or gas outlet, installs with the laminating of Peltier semiconductor device.Peltier semiconductor device, temperature sensor can be fixed on reducer by modes such as gluing, screw connections, heat sink can be fixed on Peltier semiconductor device by modes such as gluing, screw connections, it is possible to the mode such as be connected by screw is affixed directly on reducer.Concrete gas conduit wall certain distance is wanted in annular Peltier semiconductor device and heat sink center bore inner wall face, in order to avoid heat is delivered on conduit too much, impact heats the efficiency of refrigeration.
Relative to horizontal dress Peltier little flow controller, perpendicular dress little flow controller advantageously reduces component height.
Fig. 8 is the detailed description of the invention five of the present invention
The perpendicular dress little flow controller of this embodiment uses two annular Peltier semiconductor device, and Fig. 8 is its structural representation.Little flow controller by reducer 1, gas feed 2,3,2 Peltier semiconductor device of gas outlet 4,2 are heat sink 5, temperature sensor 6 forms, heat sink 5, Peltier semiconductor device 4, reducer 1 and another Peltier semiconductor device 4, another is heat sink 5 is installed in series along gas flow direction.Heat sink is circular or square, and center has round center hole, wants to cover Peltier quasiconductor heat-conducting substrate with the size in the face of Peltier semiconductor device laminating.The centre bore of Peltier semiconductor device is installed through gas access or gas outlet so that it is heat-conducting substrate is installed with reducer laminating.Heat sink centre bore passes gas access or gas outlet, installs with the laminating of Peltier semiconductor device.Peltier semiconductor device, temperature sensor can be fixed on reducer by modes such as gluing, screw connections, heat sink can be fixed on Peltier semiconductor device by modes such as gluing, screw connections, it is possible to the mode such as be connected by screw is affixed directly on reducer.
Relative to the perpendicular dress Peltier little flow controller using a Peltier semiconductor device, the perpendicular dress Peltier little flow controller using two Peltier semiconductor device can make reducer be uniformly heated, improve flow control accuracy, and under conditions of each Peltier semiconductor device electrical power is identical, increase cooling and warming ability, improve reducer range of temperature and pace of change, thus improve the accuracy and speed that micrometeor controls.
Claims (7)
1. a gas micro controller based on paltie effect, it is characterised in that include a reducer, gas feed, gas outlet, at least one Peltier semiconductor device and at least one is heat sink；Gas enters reducer from gas feed, after the throttling action of reducer, flows out the propellant of micrometeor from gas outlet；The two sides of Peltier semiconductor device is respectively mounted reducer and heat sink, described controller controls Peltier semiconductor device power demand and the sense of current according to feedback signal, carry out reducer actively heating, active cooling and insulation operation, make reducer can quickly regulate also stabilizing gas flux on a large scale in.
Gas micro controller based on paltie effect the most according to claim 1, it is characterised in that on described reducer, mounting temperature sensor is to detect reducer temperature, and described feedback signal is described temperature sensor output signal.
Gas micro controller based on paltie effect the most according to claim 1, it is characterised in that described feedback signal is flow signal or the current signal of electric thruster of the flowmeter survey of flow controller downstream.
Gas micro controller based on paltie effect the most according to claim 1, it is characterised in that the heat-conducting substrate of described Peltier semiconductor device is arranged on throttling device along gas flow direction.
Gas micro controller based on paltie effect the most according to claim 1, it is characterized in that, the heat-conducting substrate of described Peltier semiconductor device is perpendicular to gas flow direction and is arranged on reducer, described Peltier semiconductor device uses annular, the centre bore of Peltier semiconductor device is installed through gas access or gas outlet, makes the heat-conducting substrate of Peltier semiconductor device install with reducer laminating.
6. according to the gas micro controller based on paltie effect described in claim 4 or 5, it is characterised in that described Peltier semiconductor device quantity is 1,2 or multiple, accordingly, described heat sink quantity is 1,2 or multiple.
Gas micro controller based on paltie effect the most according to claim 6, it is characterised in that said two Peltier semiconductor device is connecting the most in parallel or series, and consistent towards the heat-conducting substrate temperature variations of reducer.
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104156020B (en) * | 2014-07-16 | 2016-05-04 | 北京控制工程研究所 | A kind of micrometeor precise control device |
| CN104142694B (en) * | 2014-07-16 | 2016-06-29 | 北京控制工程研究所 | A kind of multilamellar AND DEWATERING FOR ORIFICE STRUCTURE micro-flow controlling device |
| CN106574888B (en) * | 2014-07-25 | 2019-05-31 | 富士通株式会社 | Measure measuring device, measuring system and the measurement method of particle and gas |
| CN104298257A (en) * | 2014-09-24 | 2015-01-21 | 上海空间推进研究所 | Gas micro-flow throttler |
| CN104460707B (en) * | 2014-11-06 | 2017-01-11 | 北京控制工程研究所 | Micro-flow control system |
| FR3034214B1 (en) | 2015-03-25 | 2017-04-07 | Snecma | FLOW CONTROL DEVICE AND METHOD |
| CN110318964B (en) * | 2019-07-08 | 2020-07-28 | 哈尔滨工业大学 | Working medium flow supply quantity adjusting device based on capillary tube |
| CN110718624A (en) * | 2019-08-27 | 2020-01-21 | 天津大学 | Peltier effect cooling device and method for TDC chip |
| CN112643942A (en) * | 2019-10-10 | 2021-04-13 | 无锡市信顺机械制造有限公司 | Electric heating type adhesive tape vulcanizing machine |
| CN111649172B (en) * | 2020-04-16 | 2022-04-19 | 北京控制工程研究所 | LTCC-based miniaturized micro-flow controller |
| CN114667023A (en) * | 2020-12-22 | 2022-06-24 | 比亚迪股份有限公司 | Driving device of medical product and medical equipment |
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