CN103149949A - Micro-flow controller based on peltier effect - Google Patents

Micro-flow controller based on peltier effect Download PDF

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Publication number
CN103149949A
CN103149949A CN2013100083141A CN201310008314A CN103149949A CN 103149949 A CN103149949 A CN 103149949A CN 2013100083141 A CN2013100083141 A CN 2013100083141A CN 201310008314 A CN201310008314 A CN 201310008314A CN 103149949 A CN103149949 A CN 103149949A
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flow controller
gas
semiconductor devices
flow
peltier
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CN103149949B (en
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杭观荣
余水淋
康小录
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Shanghai Institute of Space Propulsion
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Shanghai Institute of Space Propulsion
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Abstract

The invention discloses a micro-flow controller based on the peltier effect. The controller comprises a flow restrictor, a gas inlet, a gas outlet, at least one peltier semiconductor device and at least one heat sink. Gas enters the flow restrictor from the gas inlet, after a flow restriction effect is achieved, micro-flow of propellant flows out from the gas outlet, and the flow restrictor and the heat sink are respectively arranged on two faces of a peltier semi-conductor device. By charging the peltier semi-conductor device with electricity and controlling the peltier semi-conductor device, active heating, active cooling and insulation operation can be carried out on the flow restrictor, so that the flow restrictor can fast regulate and stabilize flow of the gas in a large range. Compared with a common micro-flow controller subjected to heating wire active heating and power-off passive cooling, the micro-flow controller carries out active heating and active cooling on the flow restrictor, expands the regulating range of the flow restrictor, and improves regulating speed of the flow restrictor. Efficiency of the peltier semi-conductor device is higher than that of the heating wire during heating.

Description

A kind of gas micro controller based on paltie effect
Technical field
The present invention relates to the adjustable micrometeor gas flow controller that spacecraft propulsion system is used, the micrometeor that is applicable to the space propulsion systems such as helium, xenon, argon, nitrogen gas commonly used is controlled, and can be used for the fields such as electric propulsion, cold air propelling.
Background technology
The field of the micrometeor gaseous propellants such as the electric propulsion that the spacecraft such as satellite, deep space probe uses, the propelling of microthrust cold air, all need by the Propellant Supply device, the gas of the pressure higher (as 15MPa) in gas cylinder (or tank) to be become the required micrometeor gas of thruster (as the hall thruster of thrust 40mN, specific impulse 1600s, the anode propellant flow rate is 2.3mg/s, and the negative electrode propellant flow rate is 0.25mg/s).This Propellant Supply device generally is comprised of the pressure adjusting module of upstream and the flow regulation module two parts in downstream, connects gas cylinder on pressure adjusting module, connects thruster under the flow regulation module.Pressure adjusting module becomes lower, more stable pressure (as 0.2MPa) with the elevated pressures in gas cylinder.The flow regulation module is adjusted to the propellant of micrometeor with the propellant throttling than steady pressure of pressure adjusting module output, and by regulating within the specific limits someway the micrometeor size, to adapt to the different demands of thruster.
The flow regulation module generally is comprised of the valve (solenoid valve, latching valve etc.) of controlling the propellant break-make and flow controller etc.Flow controller is to realize the supply of micrometeor gas and the key component of regulating, and has throttling and certain flow regulation ability.
The micrometeor gas flow controller of the space propulsion systems such as the cold air propelling of commonly using both at home and abroad at present, electric propulsion can be divided into fixed sturcture throttling and varistructure throttling by throttle style.The fixed sturcture throttling refers to form with fixed sturcture the runner of fixed sturcture, realizes gas throttling, and output micrometeor gas specifically has:
1) porosint is realized gas throttling by the minim channel that porosint forms;
2) orifice plate, by one or more series connection, have the orifice plate of micron dimension diameter aperture to realize gas throttling;
3) kapillary utilizes micro-aperture capillaceous and long length to realize gas throttling, by controlling aperture capillaceous and length, realizes required gas throttling;
4) etching fluid channel, the fluid channel of utilizing chemical etching etc. to form realizes gas throttling.
The varistructure throttling refers to utilize movable part, the size of adjustments of gas runner, thus realize gas throttling, output micrometeor gas specifically has:
1) proportional flow solenoid valve by the o controlling opening of valve, thereby is realized the micrometeor adjusting.
2) utilize the valve of the functional materials such as magnetostriction or piezoelectric ceramics, utilize functional material under the effect of magnetic field or electric field, the subtle change that realizes length or shape realizes the small action of spool, and adjustments of gas runner size realizes throttling.
The varistructure throttle style utilizes the feedback of the electric current of flow or electric thruster etc., controls the aperture of spool, thereby realizes the adjusting of micrometeor.
For the fixed sturcture throttle style, generally adopt the thermal valve principle to realize the micrometeor adjusting.As the xenon flow controller of European AMPAC development, by with the flow controller of inlet/outlet pipe mouth, be wrapped in 10W spiral heater and encapsulation well heater and flow controller on flow controller, can be used as the stupalith that mechanical fixed interface uses and form.Adjusting heater voltage size, heater power can change from 0 ~ 10W, exemplary traffic range of adjustment 0.05 ~ 20mg/s.
The principle of work of thermal valve flow controller is as follows:
Suppose that gas source temperature is environment temperature, for certain actuating medium gas, inlet pressure one regularly, the gas flow of this thermal valve flow controller is relevant with the temperature of flow controller, when well heater is not worked, when the flow controller temperature equaled environment temperature, its flow was exactly the maximum flow under this environment temperature.Following three kinds of duties are arranged:
1) initiatively turn flow down: when flow reduces, heat by spiral heater, the flow controller temperature rises, gas temperature raises and causes viscosity to become large, it is large that some flow controllers (as the porosint flow controller) flow resistance also obviously becomes, gas flow diminishes, and this belongs to initiatively turns flow down, about several seconds of response time or tens of seconds;
2) the passive flow that tunes up: when flow need to be large from little change, well heater quits work, heat dissipation, the flow controller temperature descends, and gas viscosity diminishes, some flow controllers (as the porosint flow controller) flow resistance also obviously diminishes, the gas flow quantitative change is large, and this belongs to the passive flow that tunes up, approximately tens seconds response time, this moment, the maximum flow of flow controller was exactly flow controller temperature when returning to environment temperature, the maximum flow at the respective environment temperature;
3) keep a certain flow: when from a certain status adjustment to other flow, when by initiatively turning flow or the passive flow that tunes up down, when making the flow controller flow arrive target flow, regulate heater voltage (when controlling as the employing continued power, voltage variable, realize the variation of 0 ~ peak power) or dutycycle (when adopting pulse current to control, voltage is constant, realize the variation of average power by regulating dutycycle) or two kinds of methods use simultaneously, make the throttling actuator temperature be maintained to all the time temperature corresponding to this flow, make flow keep constant.
As seen, the existing flow controller that heats the active adjustment flow by well heater does not have initiatively to tune up the function of flow, because well heater can only be at ambient temperature with the temperature heating of flow controller, when well heater is not worked, the flow controller temperature can only drop to environment temperature at most, and can not lower than environment temperature, limit the performance of flow controller.
The Peltier semiconductor devices is the semiconductor devices that utilizes paltie effect (Peltier effect) to freeze and heat, can be as required, do the shapes such as squarely, circle, annular, Fig. 1 is square and two kinds of Peltier semiconductor devices profiles of annular.When paltie effect referred to that electric current passes through thermopair, a node distribute heat reduced this junction temperature, and another node absorbs heat, the phenomenon that this junction temperature is raise.The Peltier semiconductor devices is made of thermopair, wire etc. two-layer heat-conducting substrate and the many of inside.These thermopairs are connected on circuit, and are in parallel in the heat conduction, thereby when energising, the end region temperature of a substrate of thermopair connection changes consistent, realizes cooling or the intensification of this substrate.The general P type and the N-type semiconductor that mix trace element of adopting of thermopair is in series.In order to extend the life-span of Peltier semiconductor devices, can process carrying out circumferential seal between the two-layer heat-conducting substrate of device, encapsulant can be with silica gel or epoxy resin etc.In order to improve refrigerating capacity or heating capacity, can adopt the form of plural serial stage to form multistage Peltier semiconductor devices.
After Peltier semiconductor devices energising, a surface refrigeration, a surface heats, as long as change direction of current, both can realize freezing, heating the transformation of face, and heating efficiency changes size of current greater than 1, can regulate refrigeration and heat power.Peltier semiconductor devices volume is little, lightweight, machinery-free movable part, noiselessness, and easy to use, a device can replace heating and the hot cooling system of separation, and the temperature range in cold junction and hot junction can reach 80 ~ 200 ℃.
The Peltier semiconductor devices has been widely used in the cooling of refrigeration, semi-conductor chip of portable refrigerator etc. and the fields such as cooling and warming of water dispenser, column oven etc.
Summary of the invention
The present invention is directed to the flow rate adjusting method of the flow controller of above-mentioned fixed sturcture throttle style, a kind of gas micro controller based on paltie effect is provided, by the Peltier semiconductor devices is switched on and is controlled, can carry out active heating, active cooling and insulation operation to flow controller, make flow controller quick adjustment and stabilizing gas flux on a large scale.With respect to the common heater strip passive cooling little flow controller that initiatively heats, cuts off the power supply, little flow controller of the present invention can carry out active heating and active cooling to flow controller, expansion flow controller range of adjustment, improve the flow controller governing speed, and the Peltier semiconductor devices is adding the heat aging rate higher than heater strip.
For achieving the above object, the present invention adopts technical scheme as follows:
A kind of gas micro controller based on paltie effect comprises a flow controller, gas feed, gas vent, at least one Peltier semiconductor devices and at least one is heat sink; Gas enters flow controller from gas feed, through after the throttling action of flow controller, flows out the propellant of micrometeor from gas vent; Flow controller and heat sink is installed respectively on the two sides of Peltier semiconductor devices, described controller is controlled Peltier semiconductor devices power demand and direction of current according to feedback signal, flow controller is carried out active heating, active cooling and insulation operation, make flow controller can be on a large scale quick adjustment and stabilizing gas flux.
Heater strip initiatively heats with respect to adopting, passive cooling micrometeor gas flow controller, and the micrometeor gas flow controller based on paltie effect of the present invention has following advantage:
1) adopt a device to realize initiatively heating and active cooling, the gas flow range of adjustment is wider;
2) can realize quick augmented flow, utilize the refrigerating function of Peltier semiconductor devices, carry out the fast-refrigerating of throttling device, realize that flow increases function.
3) the Peltier semiconductor devices is when heating throttling device, and the efficiency of heating surface is greater than 1, and under equal electric power, firing rate surpasses heater strip, and the flow decline rate is faster; And under equal flow decline rate, namely under equal firing rate, electric power is less than heater strip.
Description of drawings
Fig. 1 is Peltier semiconductor devices profile, and wherein figure (a) is square Peltier semiconductor devices profile, and figure (b) is annular Peltier semiconductor devices profile;
Fig. 2 is the micrometeor gas flow controller structural representation based on paltie effect;
Fig. 3 is the micrometeor gas flow-control principle schematic based on paltie effect;
Fig. 4 is for adopting the horizontal dress Peltier little flow controller structural representation of a Peltier semiconductor devices;
Fig. 5 is for adopting the horizontal dress Peltier little flow controller structural representation of two Peltier semiconductor devices;
Fig. 6 is for adopting the horizontal dress Peltier little flow controller structural representation of three Peltier semiconductor devices;
Fig. 7 is for adopting the perpendicular dress Peltier little flow controller structural representation of a Peltier semiconductor devices;
Fig. 8 is for adopting the perpendicular dress Peltier little flow controller structural representation of two Peltier semiconductor devices.
Embodiment
Shown in Figure 1, be square (as shown in figure a) and two kinds of Peltier semiconductor devices profiles of annular (as shown in figure b), the Peltier semiconductor devices is made of thermopair, wire C two-layer heat-conducting substrate A, B and the many of inside.In order to extend the life-span of Peltier semiconductor devices, can process carrying out circumferential seal between the two-layer heat-conducting substrate of device, encapsulant D can be with silica gel or epoxy resin etc.
Shown in Figure 2, be the micrometeor gas flow controller basic structure schematic diagram based on paltie effect.Little flow controller is comprised of flow controller 1, gas feed 2, gas vent 3, Peltier semiconductor devices 4 and heat sink 5, is fixed with temperature sensor 6 by modes such as gluing, screw connections on flow controller 1.Peltier semiconductor devices 4 one side is adjacent to flow controller 1, another side install that heat radiation, thermal-arrest use heat sink 5.Be to improve heat-transfer effect, the medium that heat-conducting silicone grease etc. is easy to heat conduction is all enclosed on Peltier semiconductor devices two sides.The heat sink temperature difference that is conducive to reduce Peltier semiconductor devices two sides extends the life-span of this device, and improves the temperature regulating range of flow controller.
Shown in Figure 3, be the micrometeor gas flow-control principle schematic based on paltie effect.Be arranged on temperature sensor on flow controller in order to monitor the temperature of throttling device.
During this little flow controller work, control device 9 makes the required flow of little flow controller output according to instruction.Power supply 7 provides power demand for Peltier semiconductor devices 4.Control device 9 is controlled Peltier semiconductor devices 4 power demands and direction of current according to feedback signal 8, makes flow controller 1 reach uniform temperature, the propellant of the required flow of output.Feedback signal can be temperature sensor output signal, can be also the flow signal of flowmeter survey in flow controller downstream or the current signal of electric thruster.
Fig. 4 is the specific embodiment of the present invention one
The heat-conducting substrate of the Peltier semiconductor devices of the little flow controller of this embodiment is arranged on the throttling device along gas flow direction and (claims this little flow controller to be " horizontal dress Peltier little flow controller " here), and adopting a square Peltier semiconductor devices, Fig. 4 is its structural representation.Little flow controller is comprised of flow controller 1, gas feed 2, gas vent 3, Peltier semiconductor devices 4, heat sink 5, temperature sensor 6, and the two sides of Peltier semiconductor devices is respectively flow controller and heat sink.Heat sinkly can be circularly or square, the size of the face of fitting with the Peltier semiconductor devices is wanted to cover Peltier semiconductor heat-conducting substrate.Peltier semiconductor devices, temperature sensor can be fixed on flow controller by modes such as gluing, screw connections, heat sink can being fixed on the Peltier semiconductor devices by modes such as gluing, screw connections, the mode such as also can be connected by screw directly is fixed on flow controller.
Fig. 5 is the specific embodiment of the present invention two
This embodiment is horizontal dress Peltier little flow controller, and adopts two square Peltier semiconductor devices, and Fig. 5 is its structural representation.Little flow controller is comprised of flow controller 1, gas feed 2, gas vent 3, Peltier semiconductor devices 4, heat sink 5, temperature sensor 6, and the two sides of Peltier semiconductor devices is respectively flow controller and heat sink.Heat sinkly can be circularly or square, the center has round center hole, and the size of the face of fitting with the Peltier semiconductor devices is wanted to cover Peltier semiconductor heat-conducting substrate.Peltier semiconductor devices, temperature sensor can be fixed on flow controller by modes such as gluing, screw connections, heat sink can being fixed on the Peltier semiconductor devices by modes such as gluing, screw connections, the mode such as also can be connected by screw directly is fixed on flow controller.Two Peltier semiconductor devices can be in parallel on electric or be connected in series, and consistent towards the heat-conducting substrate temperature variations of flow controller.
With respect to the horizontal dress Peltier little flow controller that adopts a Peltier semiconductor devices, it is more even that the horizontal dress Peltier little flow controller of two Peltier semiconductor devices of employing can make flow controller be heated, improve flow control accuracy, and under the identical condition of each Peltier semiconductor devices electric power, increase the cooling and warming ability, improve flow controller range of temperature and pace of change, thereby improve precision and speed that micrometeor is controlled.
Fig. 6 is the specific embodiment of the present invention three
This embodiment is horizontal dress Peltier little flow controller, and adopts three square Peltier semiconductor devices, and Fig. 6 is its structural representation.Little flow controller is comprised of flow controller 1, gas feed 2, gas vent 3, Peltier semiconductor devices 4, heat sink 5, temperature sensor 6, and the two sides of Peltier semiconductor devices is respectively flow controller and heat sink.Peltier semiconductor devices, temperature sensor can be fixed on flow controller by modes such as gluing, screw connections, heat sink can being fixed on the Peltier semiconductor devices by modes such as gluing, screw connections, the mode such as also can be connected by screw directly is fixed on flow controller.Three Peltier semiconductor devices can be in parallel on electric or be connected in series, and consistent towards the heat-conducting substrate temperature variations of flow controller.
With respect to the horizontal dress Peltier little flow controller that adopts one and two Peltier semiconductor devices, adopt the horizontal dress Peltier little flow controller of three Peltier semiconductor devices, under the identical condition of each Peltier semiconductor devices electric power, increase the cooling and warming ability, improve flow controller range of temperature and pace of change, thereby improve precision and speed that micrometeor is controlled.
Fig. 7 is the specific embodiment of the present invention four
The little flow controller of this embodiment, its Peltier semiconductor devices installed surface is arranged on flow controller perpendicular to gas flow direction and (claims this little flow controller to be " perpendicular dress Peltier little flow controller " here), and adopting an annular Peltier semiconductor devices, Fig. 7 is its structural representation.Little flow controller is comprised of flow controller 1, gas feed 2, gas vent 3, Peltier semiconductor devices 4, heat sink 5, temperature sensor 6, and heat sink, Peltier semiconductor devices, flow controller are installed in series along the gas flow direction.Heat sinkly can be circularly or square, the center has round center hole, and the size of the face of fitting with the Peltier semiconductor devices is wanted to cover Peltier semiconductor heat-conducting substrate.The center pit of Peltier semiconductor devices passes the gas access or gas vent is installed, and its heat-conducting substrate and flow controller is fitted install.Heat sink center pit passes gas access or gas vent, fits with the Peltier semiconductor devices and installs.Peltier semiconductor devices, temperature sensor can be fixed on flow controller by modes such as gluing, screw connections, heat sink can being fixed on the Peltier semiconductor devices by modes such as gluing, screw connections, the mode such as also can be connected by screw directly is fixed on flow controller.Annular Peltier semiconductor devices and heat sink center bore inner wall face are wanted concrete gas conduit wall certain distance, in order to avoid heat is delivered on conduit too much, impact heats the efficient of refrigeration.
With respect to horizontal dress Peltier little flow controller, perpendicular dress little flow controller is conducive to reduce component height.
Fig. 8 is the specific embodiment of the present invention five
The perpendicular dress little flow controller of this embodiment adopts two annular Peltier semiconductor devices, and Fig. 8 is its structural representation.Little flow controller is comprised of flow controller 1, gas feed 2, gas vent 3,2 Peltier semiconductor devices 4,2 heat sink 5, temperature sensors 6, and heat sink 5, Peltier semiconductor devices 4, flow controller 1 and another Peltier semiconductor devices 4, another is heat sink 5 is installed in series along the gas flow direction.Heat sinkly can be circularly or square, the center has round center hole, and the size of the face of fitting with the Peltier semiconductor devices is wanted to cover Peltier semiconductor heat-conducting substrate.The center pit of Peltier semiconductor devices passes the gas access or gas vent is installed, and its heat-conducting substrate and flow controller is fitted install.Heat sink center pit passes gas access or gas vent, fits with the Peltier semiconductor devices and installs.Peltier semiconductor devices, temperature sensor can be fixed on flow controller by modes such as gluing, screw connections, heat sink can being fixed on the Peltier semiconductor devices by modes such as gluing, screw connections, the mode such as also can be connected by screw directly is fixed on flow controller.
With respect to the perpendicular dress Peltier little flow controller that adopts a Peltier semiconductor devices, it is more even that the perpendicular dress Peltier little flow controller of two Peltier semiconductor devices of employing can make flow controller be heated, improve flow control accuracy, and under the identical condition of each Peltier semiconductor devices electric power, increase the cooling and warming ability, improve flow controller range of temperature and pace of change, thereby improve precision and speed that micrometeor is controlled.

Claims (7)

1. the gas micro controller based on paltie effect, is characterized in that, comprises a flow controller, gas feed, gas vent, at least one Peltier semiconductor devices and at least one is heat sink; Gas enters flow controller from gas feed, through after the throttling action of flow controller, flows out the propellant of micrometeor from gas vent; Flow controller and heat sink is installed respectively on the two sides of Peltier semiconductor devices, described controller is controlled Peltier semiconductor devices power demand and direction of current according to feedback signal, flow controller is carried out active heating, active cooling and insulation operation, make flow controller can be on a large scale quick adjustment and stabilizing gas flux.
2. the gas micro controller based on paltie effect according to claim 1, is characterized in that, on described flow controller, mounting temperature sensor is to detect the flow controller temperature, and described feedback signal is described temperature sensor output signal.
3. the gas micro controller based on paltie effect according to claim 1, is characterized in that, described feedback signal is the flow signal of flowmeter survey in flow controller downstream or the current signal of electric thruster.
4. the gas micro controller based on paltie effect according to claim 1, is characterized in that, the heat-conducting substrate of described Peltier semiconductor devices is arranged on the throttling device along gas flow direction.
5. the gas micro controller based on paltie effect according to claim 1, it is characterized in that, the heat-conducting substrate of described Peltier semiconductor devices is arranged on flow controller perpendicular to gas flow direction, described Peltier semiconductor devices adopts annular, the center pit of Peltier semiconductor devices passes the gas access or gas vent is installed, and the heat-conducting substrate of Peltier semiconductor devices and flow controller applying are installed.
6. according to claim 4 or 5 described gas micro controllers based on paltie effect, is characterized in that, described Peltier semiconductor devices quantity can be 1, also can be 2 or a plurality of, and are corresponding, described heat sink can be 1,2 or a plurality of.
7. the gas micro controller based on paltie effect according to claim 6, is characterized in that, described two Peltier semiconductor devices are in parallel or be connected in series electric, and consistent towards the heat-conducting substrate temperature variations of flow controller.
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104142694A (en) * 2014-07-16 2014-11-12 北京控制工程研究所 Micro-flow control device of multilayer hole plate structure
CN104156020A (en) * 2014-07-16 2014-11-19 北京控制工程研究所 Micro-flow accuracy control device
CN104298257A (en) * 2014-09-24 2015-01-21 上海空间推进研究所 Gas micro-flow throttler
CN104460707B (en) * 2014-11-06 2017-01-11 北京控制工程研究所 Micro-flow control system
CN106574888A (en) * 2014-07-25 2017-04-19 富士通株式会社 Measuring apparatus, measuring system, and measuring method for measuring particle and gas
CN107532576A (en) * 2015-03-25 2018-01-02 赛峰航空器发动机 A kind of flow rate regulating device and method
CN110318964A (en) * 2019-07-08 2019-10-11 哈尔滨工业大学 A kind of working medium flow supply quantity regulating device based on capillary
CN110718624A (en) * 2019-08-27 2020-01-21 天津大学 Peltier effect cooling device and method for TDC chip
CN111649172A (en) * 2020-04-16 2020-09-11 北京控制工程研究所 LTCC-based miniaturized micro-flow controller
CN112643942A (en) * 2019-10-10 2021-04-13 无锡市信顺机械制造有限公司 Electric heating type adhesive tape vulcanizing machine
CN114667023A (en) * 2020-12-22 2022-06-24 比亚迪股份有限公司 Driving device of medical product and medical equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1290346B1 (en) * 2000-06-15 2008-04-02 Alcatel Lucent Temperature control with constant cooling flow and temperature for vacuum generating device
US20080302423A1 (en) * 2005-01-21 2008-12-11 Waters Investments Limited Temperature-Controlled Variable Fluidic Resistance Device
CN101588708A (en) * 2008-05-23 2009-11-25 中国科学院工程热物理研究所 Microchannel heat sink and measuring device
CN202420579U (en) * 2011-11-02 2012-09-05 蔡茂林 Flow meter assistant based on non-intervention thermal dynamic measuring principle
CN102748586A (en) * 2012-07-24 2012-10-24 天津开发区合普工贸有限公司 Equipment for precisely proportionally sealing and uniformly mixing multi-path gas, and conveying multi-path gas at constant temperature and constant pressure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1290346B1 (en) * 2000-06-15 2008-04-02 Alcatel Lucent Temperature control with constant cooling flow and temperature for vacuum generating device
US20080302423A1 (en) * 2005-01-21 2008-12-11 Waters Investments Limited Temperature-Controlled Variable Fluidic Resistance Device
CN101588708A (en) * 2008-05-23 2009-11-25 中国科学院工程热物理研究所 Microchannel heat sink and measuring device
CN202420579U (en) * 2011-11-02 2012-09-05 蔡茂林 Flow meter assistant based on non-intervention thermal dynamic measuring principle
CN102748586A (en) * 2012-07-24 2012-10-24 天津开发区合普工贸有限公司 Equipment for precisely proportionally sealing and uniformly mixing multi-path gas, and conveying multi-path gas at constant temperature and constant pressure

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104156020A (en) * 2014-07-16 2014-11-19 北京控制工程研究所 Micro-flow accuracy control device
CN104156020B (en) * 2014-07-16 2016-05-04 北京控制工程研究所 A kind of micrometeor precise control device
CN104142694A (en) * 2014-07-16 2014-11-12 北京控制工程研究所 Micro-flow control device of multilayer hole plate structure
CN106574888B (en) * 2014-07-25 2019-05-31 富士通株式会社 Measure measuring device, measuring system and the measurement method of particle and gas
CN106574888A (en) * 2014-07-25 2017-04-19 富士通株式会社 Measuring apparatus, measuring system, and measuring method for measuring particle and gas
CN104298257A (en) * 2014-09-24 2015-01-21 上海空间推进研究所 Gas micro-flow throttler
CN104460707B (en) * 2014-11-06 2017-01-11 北京控制工程研究所 Micro-flow control system
CN107532576A (en) * 2015-03-25 2018-01-02 赛峰航空器发动机 A kind of flow rate regulating device and method
US10641253B2 (en) 2015-03-25 2020-05-05 Safran Aircraft Engines Device and method for regulating flow rate
CN110318964A (en) * 2019-07-08 2019-10-11 哈尔滨工业大学 A kind of working medium flow supply quantity regulating device based on capillary
CN110318964B (en) * 2019-07-08 2020-07-28 哈尔滨工业大学 Working medium flow supply quantity adjusting device based on capillary tube
CN110718624A (en) * 2019-08-27 2020-01-21 天津大学 Peltier effect cooling device and method for TDC chip
CN112643942A (en) * 2019-10-10 2021-04-13 无锡市信顺机械制造有限公司 Electric heating type adhesive tape vulcanizing machine
CN111649172A (en) * 2020-04-16 2020-09-11 北京控制工程研究所 LTCC-based miniaturized micro-flow controller
CN114667023A (en) * 2020-12-22 2022-06-24 比亚迪股份有限公司 Driving device of medical product and medical equipment

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