CN103123905A - Rapid heat processing device and method - Google Patents
Rapid heat processing device and method Download PDFInfo
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- CN103123905A CN103123905A CN2011103667579A CN201110366757A CN103123905A CN 103123905 A CN103123905 A CN 103123905A CN 2011103667579 A CN2011103667579 A CN 2011103667579A CN 201110366757 A CN201110366757 A CN 201110366757A CN 103123905 A CN103123905 A CN 103123905A
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- wafer
- rtp
- bearing chamber
- film bearing
- placing chamber
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Abstract
The invention discloses a rapid heat processing (RTP) device. The RTP device comprises a process cavity and a wafer placing chamber, a wafer carrying table is arranged in the wafer placing chamber, and the wafer carrying table is made of heat-resisting materials. The invention further discloses a RTP method by the device. The method includes the steps that (1) a wafer is transferred from the wafer placing chamber to the process cavity for high temperature annealing treatment; (2) the wafer is directly transferred from the process cavity back to the wafer placing chamber and placed on the wafer carrying table; (3) nitrogen is emitted in the wafer placing chamber for two to three times; and (4) the wafer placing chamber is opened to take out the wafer. According to the RTP device and method, the wafer carrying table is made of the heat-resisting materials so that the wafer subjected to high temperature annealing treatment can be directly transferred to the wafer placing chamber, the natural cooling is performed within prolonged N2 emission time, thereby prior operating modes of RTP devices are broken through, RTP operating time of each batch of products is reduced, and the production efficiency is improved.
Description
Technical field
The present invention relates to semiconductor integrated circuit and make the field, particularly relate to a kind of fast heat treatment device and use this equipment to carry out the method for rapid thermal treatment.
Background technology
Rapid thermal treatment (RTP) is one of critical process during semiconductor is made, and can rise to fast high temperature in technical process, and operating temperature range contains 500～1100 ℃, and annealing time is no more than 1 minute usually.This technique is extensive use in the deep-submicron processing procedures such as charge carrier hot activation, thermal oxidation, metal silicide formation at present.
Traditional RTP processing technological flow is as shown in Figure 1: pass sheet to process cavity from film bearing chamber and carry out annealing in process; Then by transferring arm, disk is transferred load to cooling chamber, at N
2During enclosing, atmosphere is cooled to normal temperature; By transferring arm, disk is returned to slide holder in film bearing chamber (LOADLOCK) more afterwards; At last, extraction N of film bearing chamber's experience
2Program after open, complete whole flow processs.The output efficiency of every batch of wafer is affected by following factor mainly: the annealing process time, pass the extraction N in sheet time, cooling time and film bearing chamber
2Time.
RTP equipment as shown in Figure 2, generally includes 3 process cavity, 2 cooling chambers and 2 film bearing chamber, and slide holder is arranged in film bearing chamber, and slide holder is accepted the position of disk, and namely film trap, adopt the Teflon material, as shown in Figure 3.Due to Teflon material non-refractory, therefore, must first lower the temperature in cooling chamber through the wafer after the high temperature anneal, after arriving normal temperature, just can pass back on slide holder.In order to guarantee to be down to normal temperature, wafer need to stop in cooling chamber approximately 45 seconds usually, was no more than the annealing process time of 1 minute than every wafer, after annealing process cooling time significant limitation the efficient of wafer output.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of fast heat treatment device, and it has higher wafer output efficiency.
For solving the problems of the technologies described above, fast heat treatment device of the present invention mainly is made of process cavity and film bearing chamber's two parts, and process cavity is used for carrying out the high temperature anneal of wafer; Be useful on the slide holder of carrying wafer in film bearing chamber, this slide holder adopts exotic material to make.
Better, described slide holder is quartzy material.
Another technical problem that the present invention will solve is to provide uses the said equipment to carry out the method for rapid thermal treatment.
For solving the problems of the technologies described above, quick heat treatment method of the present invention mainly comprises following processing step:
1) wafer is reached process cavity from film bearing chamber, carry out the high temperature anneal;
2) directly pass wafer back film bearing chamber from process cavity, and be placed on slide holder;
3) extraction nitrogen 2～3 times in film bearing chamber;
4) open film bearing chamber, take out wafer.
The present invention makes and can directly pass film bearing chamber back through the wafer after the high temperature anneal, then by extending N in film bearing chamber by adopting the quartzy exotic material that waits to make slide holder
2The method of extraction time, in the situation that do not increase total activity duration, reached the purpose that wafer is lowered the temperature naturally, thereby broken through the original operating type of RTP equipment, omit wafer and advanced the step of cooling chamber cooling, reduce the RTP activity duration of every batch products, improved the efficient of output.
Description of drawings
Fig. 1 is traditional RTP processing technological flow schematic diagram.
Fig. 2 is RTP equipment plane figure.
Fig. 3 is the slide holder schematic diagram.
Fig. 4 is the RTP processing technological flow of the embodiment of the present invention.
Embodiment
Understand for technology contents of the present invention, characteristics and effect being had more specifically, existing in conjunction with illustrated execution mode, details are as follows:
The present embodiment adopts the slide holder (film trap of slide holder and framework are quartzy material) of full quartz material processing and fabricating RTP equipment, this quartz slide platform can be anti-high temperature more than 1000 ℃, and can not produce deformation, can not introduce pollution yet.
Because slide holder has adopted resistant to elevated temperatures quartz material, can directly accept the wafer of high temperature, therefore, the RTP handling process of the present embodiment has dispensed the cooling step in cooling chamber.As shown in Figure 4, a collection of (25) wafer reaches process cavity from film bearing chamber, under 1150 ℃ of high temperature, carry out continuously the quick thermal annealing process (RTA) in 30 seconds, then directly return to film bearing chamber, be placed on the quartz slide platform in film bearing chamber, then film bearing chamber is carried out extraction N twice
2The program of gas allows wafer at N
2Naturally cooling under atmosphere, open at last film bearing chamber, take out wafer, complete the rtp streaming journey.
Natural cooling situation for the test wafer sheet in film bearing chamber, we carry out respectively 1 time and 2 extraction N two batches of wafers (25 every batch)
2Then the program of gas uses the infrared measurement of temperature method, measures the surface temperature of the wafer at same position place, obtains result as shown in table 1:
Table 1 wafer surface temperature test result
By as seen from Table 1, increase a N in the RTP handling process
2Gas extraction program (approximately 3 minutes) can make wafer fully cooling in film bearing chamber, reaches the temperature requirement when moving back to film magazine.And due to twice N
2Extraction program (6 minutes altogether) and quick thermal annealing process can be carried out simultaneously, and therefore, the total operation time of every batch products can be because of N
2The increase of gas extraction program and extending.Statistics shows, adopt the RTP technological process of the present embodiment, than traditional two cooling chamber RTP working methods, the activity duration average energy of every batch (25) is saved about 6 minutes, according to original every batch of 40 minute activity duration calculating, production efficiency has improved 15%.
Claims (3)
1. a fast heat treatment device, comprise process cavity and film bearing chamber, and slide holder is arranged in film bearing chamber, it is characterized in that, described slide holder adopts exotic material to make.
2. fast heat treatment device according to claim 1, is characterized in that, described slide holder is quartzy material.
3. right to use requires 1 or 2 described equipment to carry out the method for rapid thermal treatment, it is characterized in that, comprises the following steps:
1) wafer is reached process cavity from film bearing chamber, carry out the high temperature anneal;
2) directly pass wafer back film bearing chamber from process cavity, and be placed on slide holder;
3) extraction nitrogen 2～3 times in film bearing chamber;
4) open film bearing chamber, take out wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103667579A CN103123905A (en) | 2011-11-18 | 2011-11-18 | Rapid heat processing device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103667579A CN103123905A (en) | 2011-11-18 | 2011-11-18 | Rapid heat processing device and method |
Publications (1)
| Publication Number | Publication Date |
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| CN103123905A true CN103123905A (en) | 2013-05-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103667579A Pending CN103123905A (en) | 2011-11-18 | 2011-11-18 | Rapid heat processing device and method |
Country Status (1)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2106421U (en) * | 1991-08-02 | 1992-06-03 | 清华大学 | Infrared speed heat-treated equipment |
| US5360769A (en) * | 1992-12-17 | 1994-11-01 | Micron Semiconductor, Inc. | Method for fabricating hybrid oxides for thinner gate devices |
| WO2001082342A1 (en) * | 2000-04-26 | 2001-11-01 | Wafermasters Incorporated | Gas assisted rapid thermal annealing |
| US20030155076A1 (en) * | 2002-02-20 | 2003-08-21 | Seishi Murakami | Semiconductor processing system |
-
2011
- 2011-11-18 CN CN2011103667579A patent/CN103123905A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2106421U (en) * | 1991-08-02 | 1992-06-03 | 清华大学 | Infrared speed heat-treated equipment |
| US5360769A (en) * | 1992-12-17 | 1994-11-01 | Micron Semiconductor, Inc. | Method for fabricating hybrid oxides for thinner gate devices |
| WO2001082342A1 (en) * | 2000-04-26 | 2001-11-01 | Wafermasters Incorporated | Gas assisted rapid thermal annealing |
| US20030155076A1 (en) * | 2002-02-20 | 2003-08-21 | Seishi Murakami | Semiconductor processing system |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20130529 |