CN2106421U - Infrared speed heat-treated equipment - Google Patents
Infrared speed heat-treated equipment Download PDFInfo
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- CN2106421U CN2106421U CN 91219291 CN91219291U CN2106421U CN 2106421 U CN2106421 U CN 2106421U CN 91219291 CN91219291 CN 91219291 CN 91219291 U CN91219291 U CN 91219291U CN 2106421 U CN2106421 U CN 2106421U
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Abstract
The utility model relates to an infrared speed heat-treated equipment which belongs to the process equipment of very large scale integrated circuit and semiconductor device manufacturing technology, wherein, the infrared speed heat-treated equipment is composed of a microcomputer system, an infrared heat treatment quartz chamber, a cantilever transferring slice mechanism, a double door transitional chamber, an automatic slice fetching and releasing mechanism, a high frequency induction heating source, a temperature measuring and controlling device, gas paths and the controller thereof, etc. The microcomputer system auto-controls the fetching/releasing and transferring of semiconductor chips, the opening/closing of the double door of the transitional chamber, the temperature and the time of heat treatment to semiconductor chips, and the flow-rate of multi-path gases, the purpose of automatically and fast heat treatment to semiconductor chips is achieved thereby. The infrared speed heat-treated equipment is suitable for the development of integrated circuits and semi-conductor devices and the highly industrialized production thereof.
Description
The utility model belongs to the process equipment of very lagre scale integrated circuit (VLSIC) and semiconductor device processing technology.
Since early sixties begins to adopt ion implantation technique as new semiconductor doping technology, promoted the development of semiconductor integrated circuit greatly.Exactly because developing rapidly of integrated circuit, the annealing technology that again ion is injected has proposed requirements at the higher level conversely.
The great advantage that ion injects is that doping is accurate and dopant profiles is controlled, but the conventional thermal annealing that these advantages must have after being injected into destroys.In order to guarantee to obtain higher electric activity ratio and eliminate implant damage preferably, the temperature of conventional thermal annealing generally is than higher (900～1100 ℃), the time also long (dozens of minutes).Therefore implanted dopant distributes seriously because of diffusion again.This diffusion not only makes the source-and-drain junction of MOS circuit deepen deeply, and length of effective channel is shortened, and this is that very large scale integration technology institute is unallowed.Therefore have a lot of scientific workers to study new annealing technology in recent ten years in the world---the rapid thermal treatment technology.The inventor has invented the high purity graphite that adopts in the quartzy chamber of high-frequency induction heating as radiant heat source, silicon chip intensifications of between two parallel graphite cakes, being heated rapidly, and outside the thermal treatment zone rapid infrared rapid thermal treatment technology of lowering the temperature.This technology and realization equipment thereof have obtained a United States Patent (USP) and binomial Chinese patent (U.S. Patent number: 4794217; China Patent No.: 85100131.9 and 87202679.5).
Adopt this technology; deliver to two semiconductor chips between the graphite cake except the thermal radiation energy of accepting the pyrographite plate; also can pass through the heat conduction and the thermal convection of protective gas (as high pure nitrogen) and accelerate the semiconductor chip programming rate; this point was even more important in the heat treatment starting stage; because the semiconductor chip temperature is low during beginning; little to the infrared energy absorption, so most of infrared energy all sees through semiconductor chip and loses.If the incipient stage is improved the semiconductor chip temperature rapidly by heat conduction, thermal convection, will inevitably make semiconductor chip absorbed radiation energy more like this, accelerate heating rate.In addition, semiconductor chip after the intensification (the semiconductor chip conductivity rises with the temperature index formula is dull) can produce eddy current again in the electromagnetic field of high frequency, from and further accelerate heating rate, so the inventor's equipment can heat semiconductor chip to 1000 ℃ about 3 seconds.Its heating rate is faster than other rapid thermal annealing equipment.After meeting the requirements of heat treatment time, semiconductor chip is pulled out the graphite cake thermal treatment zone rapidly, thereby can fast cooling, this had both guaranteed the accuracy of heat treatment time, the super solid solubility metastable state charge carrier that also can guarantee to inject semiconductor chip is not because of slow cooling inactivation.This is crucial for making the shallow PN junction of high concentration.
The outfit of equipment schematic diagram of realizing its technology as shown in Figure 1; it comprises by the quartzy chamber (1) of rectangle; high frequency coil (2); the quartzy chamber of the heat treatment that coreless induction furnace (3) constitutes; by driving wheel (4); machine driven system and time control machine structure that driven pulley (5) and thin guiding principle silk (6) constitute; by quartz rod (7) and be contained in the feeding mechanism that quartz rod fixed mount (8) is formed on the steel wire; by high-purity protection gas cylinder (9), parts such as gas charging system that gas flowmeter and control valve (10) constitute and temperature measurer (11) are formed.
In order to make heating-up temperature more even, this technology is taked three measures: one is to use than the also big graphite cake of silicon chip diameter as radiant heat source; The 2nd, adopt the semiconductor chip of parallel graphite cake heating between them of two close proximity up and down; The 3rd, around graphite cake, all added efficient infrared external reflection plate, most of radiant energy can be reflected.Like this, the temperature field between two graphite cakes is very even, thereby semiconductor chip does not produce buckling deformation and translation gliding after having guaranteed heat treatment.
The quartzy cavity configuration of realizing above-mentioned measure as shown in Figure 2, the quartzy chamber of rectangle (1) is outer round high frequency coil (2), quartzy chamber one end has an air inlet pipe (12), the other end is out the chamber lid (13) in flat hole, the infrared external reflection plate (14) that scribbles deielectric-coating is fixed in the quartzy chamber, double-layer graphite plate (15) is fixed in the infrared external reflection plate (14) by quartzy carriage (17), the thermal treatment zone (102) between the two-layer graphite cake be delivered to or be pulled out to semiconductor chip can along quartzy guide rail (16), opens thermometer hole (18) on upper strata graphite cake and the infrared external reflection plate.
Though the said equipment has tangible advantage than the fast heat treatment device of other types, substantially satisfy semiconductor chip is carried out the quick heat treatment quality requirement, but still exist following weak point: one, the quartzy horse that is loaded with semiconductor chip is by sliding on quartzy guide rail, quartzy chamber is sent into, pulled out to slice, thin piece, in this transport process, can produce dust because of friction, influence the semiconductor chip thermal treatment quality; They are two years old, single cavity configuration is adopted in above-mentioned quartzy chamber, and rapid thermal treatment process is to adopt advanced continuous monolithic processing mode, and the quartzy horse that is loaded with semiconductor chip must frequently pass in and out quartzy chamber, like this, unavoidably having air bleeds and causes contamination in the quartzy chamber; Its three, the said equipment adopts the manual manipulation sheet mode, influences the operating efficiency of equipment.
The purpose of this utility model is to overcome the weak point of the said equipment, structure to equipment is improved, make semiconductor chip in heat treatment and transmittance process in cleaner, further improve the semiconductor chip thermal treatment quality, improve equipment dependability and operating efficiency, to satisfy the needs of industrialized production.
The utility model is designed the infrared fast heat treatment device of a kind of modified model, handle quartzy chamber by infra-red heat, the gas circuit and the control device thereof that are communicated with quartzy chamber, the high-frequency induction heating source, transmit semiconductor chip mechanism, part such as thermometric and temperature regulating device is formed, said infra-red heat is handled quartzy chamber by the quartzy cavity of square type, high frequency coil outside quartzy cavity, be fixed on the infrared external reflection plate in the quartzy cavity, two graphite cakes placing up and down in reflecting plate constitute, it is characterized in that also having a two-door adapter cavity of not opening simultaneously, this adapter cavity is connected with the end that said infra-red heat is handled quartzy chamber, and said gas circuit also is communicated with this adapter cavity.Also comprise automatic clamping and placing sheet mechanism and Control System of Microcomputer, the operating state in said automatic clamping and placing sheet mechanism, transmission sheet mechanism, thermometric and temperature regulating device, high-frequency induction heating source is all controlled by microcomputer automatically according to the program that weaves in advance.
Characteristics of the present utility model are, when transmission sheet mechanism sends semiconductor chip into the heat treatment of quartzy chamber, two-door adapter cavity outer door is at first opened, make the quartzy horse that is loaded with semiconductor chip enter adapter cavity, close outer door then, after the several seconds, open the adapter cavity inner door again horse is entered in the quartzy cavity.And the semiconductor chip after transmission sheet mechanism is with heat treatment is when pulling out quartzy chamber, and two-door adapter cavity inner door is at first opened, and makes the horse that is loaded with semiconductor chip be retracted into adapter cavity, close inner door then, after the several seconds, open outer door again, make horse withdraw from adapter cavity.Like this,, when horse passes in and out quartzy chamber, prevented that horse from bringing air in the quartzy cavity into, reduced outside air and entered the pollution that causes in the quartzy cavity owing to also be filled with nitrogen in the adapter cavity.The said feeding mechanism of the utility model, drive the dolly that on guide rail, moves by the motor-driven leading screw, fixing onboard cantilever and form with the quartzy horse on cantilever top, cantilever will be loaded with the direct nothing of quartzy horse of semiconductor chip and frictionally send into or pull out adapter cavity and quartzy chamber under the drive of dolly, the dust pollution of having avoided guide tracked quartzy horse of transmission sheet mechanism and quartzy guide rail to cause because of friction in transmitting the semiconductor chip process like this.The utility model improves the operating efficiency of equipment owing to increased automatic clamping and placing sheet mechanism greatly in addition.
Brief Description Of Drawings:
Fig. 1 is a prior art outfit of equipment schematic diagram
Fig. 2 handles quartzy cavity configuration schematic diagram for the prior art infra-red heat
Fig. 3 is the utility model embodiment general illustration
Fig. 4 handles quartzy chamber for the infra-red heat of the utility model embodiment
Fig. 5 is the two-door adapter cavity structural representation of the utility model embodiment
Fig. 6 is the utility model embodiment automatic clamping and placing sheet structural scheme of mechanism
The most preferred embodiment of a kind of infrared fast heat treatment device of the utility model design as shown in Figure 3.This device is handled quartzy chamber, two-door adapter cavity, the gas circuit that is communicated with this quartz chamber and adapter cavity and control device thereof, high-frequency induction heating source, automatic clamping and placing sheet mechanism by infra-red heat, and part such as transmission sheet mechanism, thermometric and temperature regulating device and Control System of Microcomputer is formed.Its concrete structure such as Fig. 4～shown in Figure 6, be described in detail as follows respectively below in conjunction with accompanying drawing.Fig. 4 handles quartzy cavity configuration schematic diagram for the infra-red heat of the utility model embodiment.It is the quartzy chamber (1) of rectangle that infra-red heat is handled quartzy chamber, cavity is divided into two zones, one quartzy framework (19) is installed in the left-half chamber, each face of framework top to bottom, left and right, front and rear all has infrared external reflection plate (14), reflecting plate is placed on the framework up and down, and the reflecting plate of all around hangs on the framework by quartzy pin.In the reflecting plate on the parallel up and down quartzy back-up block (20) that is placed on framework of two graphite cakes (15); graphite and framework contact-making surface can be made frosting; to prevent that graphite cake from sliding, stain for preventing graphite oxidation and carbon, but graphite cake outsourcing one deck high-purity alpha-SiC diaphragm.Constitute heat treatment high-temperature region (102) between two graphite cakes, top reflecting plate and graphite cake have a thermometer hole (18), and high frequency coil (2) is arranged outside the quartzy chamber in this zone.The probe (111) of thermo detector is aimed at thermometer hole (18), but the temperature of graphite cake or semiconductor chip in the pyrometry district.The right half part of quartzy cavity is distinguished (103) for giving heat (cold), and second probe (112) arranged outside this chamber, district, can survey semiconductor chip enter before the high-temperature region or withdraw from the high-temperature region after temperature.Quartzy chamber one end is welded with an air inlet pipe (121); can in quartzy chamber, lead to protection gas or work gas; for example can lead to high pure nitrogen; make and keep malleation in the chamber; another port, quartzy chamber polishes driving fit and connects a baffle plate (13); the corresponding height in high-temperature region between baffle plate, preceding infrared external reflection plate and graphite cake has slot, and the quartzy horse (71) that is loaded with semiconductor chip (70) is passed through.Semiconductor chip (70) and the high-temperature region heat treatment process of quartzy horse (71) between graphite cake and this district's process of turnover are supported by cantilever (72) and are suspended in the high-temperature region, and do not contact with other any part.Two-door adapter cavity (101) is connected with plate washer (13) opposite side driving fit.
Said two-door adapter cavity is made up of cavity (22), two valves (24,25) of being connected with the cavity two ends, as shown in Figure 5.Valve is by valve body (241,251), and the valve lever (242,252) with long and narrow through hole constitutes, and valve lever can rotate around the axis in valve body, the adapter cavity two ends are in out or close state.Adapter cavity has an air inlet pipe (122) and an escape pipe (123), can lead to protection gas in the chamber, but the throughput independent regulation.After semiconductor chip is sent into adapter cavity, the first road valve (24) is closed, after postponing several seconds, the second road valve (25) is just opened, close the second road valve (25) again after semiconductor chip sent into quartzy chamber, thereby make adapter cavity always have a door to be in closed condition, reach the purpose that keeps the cleaning of quartzy chamber.The valve of said adapter cavity can be made with stainless steel, and cavity can be assembled with corrosion resistant plate or quartz plate.This equipment adopts the contactless pyrometer of digital optics to measure the temperature of graphite cake and semiconductor chip.Pyrometer is made up of two probes (111) (112), optical fiber, amplifier etc.Said two probes are measured the temperature of the graphite or the semiconductor chip of the thermal treatment zone respectively, and the temperature of the semiconductor chip in preheating (cold) district.When the pyrometer optic probe is aimed at testee, receive the part of emittance from the testee surface, and send detector to by optical fiber, become the signal of telecommunication through opto-electronic conversion, again through amplify, temperature directly shows or screen display with numeral after the linearisation.Therefore, it is stronger with anti-electromagnetic interference capability that this pyrometer is high temperature resistant, and it is reliable to measure temperature stabilization.
In the present embodiment, automatic clamping and placing sheet mechanism is installed in the two-door adapter cavity outside.Automatic clamping and placing sheet mechanism as shown in Figure 6, by film magazine 1(26), film magazine 2(27), wafer-supporting platform (28) is inhaled sheet mouth (29), and corresponding driving motor (31,32,33,34), leading screw (41,42,43) and tooth bar (44), slide block (45), guide rail compositions such as (46).Its work simple procedure is: when the semiconductor chip of handling is held in the palm from quartzy horse (71) when coming up by wafer-supporting platform (28), inhale sheet mouth (29) just in time be in hold the film magazine 1(26 that semiconductor chip is housed) position (this position is the initial position of suction sheet mouth) of a slice (701) and wafer-supporting platform semiconductor-on-insulator sheet (702) topmost.After suction sheet mouth (29) holds this two semiconductor chip by vacuum, wafer-supporting platform (28) some distances that descend a little, inhale sheet mouth (29) and push the right rapidly to by slide block (45), just the semiconductor chip that will handle after stopping (702) is put film magazine 2(27 into), the wafer-supporting platform (28) that untreated semiconductor chip of while (701) is just in time risen is caught, and slowly decline is placed on the quartzy horse (71), continues to drop to extreme lower position again.At this moment transmit quartzy horse (71) that semiconductor chip mechanism will be loaded with semiconductor chip and advance in the quartzy chamber and heat-treat, so far finished the process that picks and places a pair of semiconductor chip.Drive system makes slide block (45) along guide rail movement then, band attracting sheet mouth (29) is got back to initial position, and drive motors (31), leading screw (41) makes film magazine 1(26) distance of the semiconductor chip that rises, drive motors (33), leading screw (43) makes film magazine 2(27) distance of the semiconductor chip that descends, waiting for picking and placeing next that so circulation is repeatedly to semiconductor chip.
Said gas circuit of this equipment and control thereof comprise three gas pipings and a vacuum line; wherein two gas pipings can lead to protective gas (as nitrogen) and working gas (as ammonia) respectively to quartzy chamber; the logical protection of another gas piping gas is to two-door adapter cavity, and they regulate flow by the computer control mass flowmenter.Vacuum line links to each other with suction sheet mouth, by computer controlled sheet and the film releasing process produced.
The STD bus industrial control computer that this equipment utilization antijamming capability is strong is finished following function: film magazine is to film magazine automatic clamping and placing sheet, two-door automatic shutter, the dolly of cantilever mounted (quartzy horse is contained on the cantilever) start and stop automatically, accurately control semiconductor chip heat treatment temperature and time, and control multipath gas flow etc. automatically.
Claims (6)
1, a kind of infrared fast heat treatment device, handle quartzy chamber by infra-red heat, the gas circuit and the control device thereof that are communicated with quartzy chamber, the high-frequency induction heating source, transmit semiconductor chip mechanism, part such as thermometric and temperature regulating device and Control System of Microcomputer is formed, said infra-red heat is handled quartzy chamber by the quartzy cavity of square type, high frequency coil outside quartzy cavity, be fixed on the infrared external reflection plate in the quartzy cavity, two parallel graphite cakes in reflecting plate constitute, it is characterized in that also having a two-door adapter cavity of not opening simultaneously, this adapter cavity is connected with the end that said infra-red heat is handled quartzy chamber, said gas circuit is communicated with this adapter cavity, also comprises micro-processor controlled automatic clamping and placing sheet mechanism.
2, equipment as claimed in claim 1 is characterized in that said transmission sheet mechanism drives the dolly that moves by the motor-driven leading screw on guide rail, fixing onboard cantilever and form with the quartzy horse on cantilever top.
3, equipment as claimed in claim 2, it is characterized in that said infra-red heat handles quartzy chamber and be divided into two zones, be the heat-treatment zone and give heat (cold) district that said thermometric and temperature regulating device have two temperature probes to aim at said heat-treatment zone respectively and give heat (cold) and distinguish.
4, equipment as claimed in claim 2, it is characterized in that two valves that said two-door adapter cavity is connected by cavity, with the cavity two ends form, valve is made of valve body, valve lever with long and narrow through hole, valve lever can rotate around the axis in valve body, the adapter cavity two ends are in out or close state, adapter cavity has an air inlet pipe and an escape pipe.
5, equipment as claimed in claim 3, it is characterized in that two valves that said two-door adapter cavity is connected by cavity, with the cavity two ends form, valve is made of valve body, valve lever with long and narrow through hole, valve lever can rotate around the axis in valve body, the adapter cavity two ends are in out or close state, adapter cavity has an air inlet pipe and an escape pipe.
6, as claim 1,2,3,4 or 5 described equipment, it is characterized in that said automatic clamping and placing sheet mechanism by film magazine 1, film magazine 2, wafer-supporting platform is inhaled the sheet mouth, and the corresponding driving motor, leading screw and tooth bar, slide block, guide rail is formed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91219291 CN2106421U (en) | 1991-08-02 | 1991-08-02 | Infrared speed heat-treated equipment |
| JP2763092U JPH0566974U (en) | 1991-08-02 | 1992-04-27 | Infrared rapid thermal processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91219291 CN2106421U (en) | 1991-08-02 | 1991-08-02 | Infrared speed heat-treated equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2106421U true CN2106421U (en) | 1992-06-03 |
Family
ID=4926588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 91219291 Granted CN2106421U (en) | 1991-08-02 | 1991-08-02 | Infrared speed heat-treated equipment |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0566974U (en) |
| CN (1) | CN2106421U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356505C (en) * | 2003-12-26 | 2007-12-19 | 清华大学 | Fast semiconductor heat-treating facility with vertical heat treating chamber |
| CN102809270A (en) * | 2012-06-28 | 2012-12-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN103123905A (en) * | 2011-11-18 | 2013-05-29 | 上海华虹Nec电子有限公司 | Rapid heat processing device and method |
| CN104051308A (en) * | 2014-06-27 | 2014-09-17 | 广东先导半导体材料有限公司 | Chip stripping device and system and device for controlling chip stripping |
-
1991
- 1991-08-02 CN CN 91219291 patent/CN2106421U/en active Granted
-
1992
- 1992-04-27 JP JP2763092U patent/JPH0566974U/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356505C (en) * | 2003-12-26 | 2007-12-19 | 清华大学 | Fast semiconductor heat-treating facility with vertical heat treating chamber |
| CN103123905A (en) * | 2011-11-18 | 2013-05-29 | 上海华虹Nec电子有限公司 | Rapid heat processing device and method |
| CN102809270A (en) * | 2012-06-28 | 2012-12-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN104051308A (en) * | 2014-06-27 | 2014-09-17 | 广东先导半导体材料有限公司 | Chip stripping device and system and device for controlling chip stripping |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566974U (en) | 1993-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C15 | Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993) | ||
| RN01 | Renewal of patent term | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |