CN110911524A - Preparation method and preparation device of chip electrode - Google Patents
Preparation method and preparation device of chip electrode Download PDFInfo
- Publication number
- CN110911524A CN110911524A CN201911071818.1A CN201911071818A CN110911524A CN 110911524 A CN110911524 A CN 110911524A CN 201911071818 A CN201911071818 A CN 201911071818A CN 110911524 A CN110911524 A CN 110911524A
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- chip
- electrode
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- temperature
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- 238000002360 preparation method Methods 0.000 title claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000001465 metallisation Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 abstract description 21
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 8
- 238000011065 in-situ storage Methods 0.000 abstract description 7
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 9
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides a preparation method and a preparation device of a chip electrode, wherein the preparation method comprises the following steps: placing the chip in a vacuum chamber for metallization deposition to form an electrode of the chip; heating the chip with the electrode, and maintaining for a preset time after the chip reaches a first preset temperature; and cooling the chip in the vacuum chamber to a second preset temperature so as to finish the preparation of the chip electrode. According to the preparation method of the chip electrode, the damage of the chip between the electrode preparation and the electrode annealing is effectively reduced, the contact resistance of the electrode is effectively reduced, the ohmic contact effect between the electrode and a semiconductor is improved, and the performance of the chip is improved by directly carrying out in-situ annealing in the vacuum chamber after the electrode preparation is finished.
Description
Technical Field
The invention relates to the technical field of infrared detectors, in particular to a preparation method and a preparation device of a chip electrode.
Background
With the development of the mercury cadmium telluride infrared technology, the performance requirements on mercury cadmium telluride chips are higher and higher, and the good ohmic contact between the electrodes and the chips has a good effect of improving the performance of devices. In order to reduce the contact resistance between the semiconductor and the metal electrode and form a good ohmic contact between the semiconductor and the metal electrode, annealing the electrode after preparing the electrode is currently performed by the following method: after the electrode is prepared, the chip is taken out from the vacuum chamber for preparing the electrode and then transferred to an annealing furnace for electrode annealing. The problems with this approach are: when the chip is taken out of the vacuum chamber, the chip is exposed in the air to contaminate the surface of the metal layer, and in the subsequent heat treatment process, contaminated ions enter the metal layer to cause the quality reduction of ohmic contact and influence on the performance of the detector.
Disclosure of Invention
The invention provides a preparation method and a preparation device of a chip electrode, aiming at solving the technical problem of forming good ohmic contact between the electrode of a chip and a semiconductor.
The preparation method of the chip electrode comprises the following steps:
placing a chip in a vacuum chamber for metallization deposition to form an electrode of the chip;
heating the chip with the electrode, and maintaining for a preset time after the chip reaches a first preset temperature;
and in the vacuum chamber, cooling the chip to a second preset temperature to finish the preparation of the chip electrode.
According to the preparation method of the chip electrode, the damage of the chip between the electrode preparation and the electrode annealing is effectively reduced, the contact resistance of the electrode is effectively reduced, the ohmic contact effect between the electrode and a semiconductor is improved, and the performance of the chip is improved by the method of directly carrying out in-situ annealing in the vacuum chamber after the electrode preparation is finished.
According to some embodiments of the invention, nitrogen is introduced into the vacuum chamber during the cooling of the chip.
In some embodiments of the invention, nitrogen is introduced into the vacuum chamber while heating the chip on which the electrode is formed.
According to some embodiments of the invention, the first predetermined temperature is in a range of 160 ℃ to 180 ℃.
In some embodiments of the present invention, the preset time is in a range of 2min to 5 min.
According to some embodiments of the invention, the second predetermined temperature is ambient room temperature.
The preparation device of the chip electrode according to the embodiment of the invention comprises:
a housing defining a vacuum chamber;
the sample tray is used for placing a chip to be processed;
the temperature controller is used for heating the chip to be processed;
wherein, the electrode of the chip is prepared in the vacuum chamber by adopting the preparation method of the chip electrode.
According to the preparation device of the chip electrode, the damage of the chip between the electrode preparation and the electrode annealing is effectively reduced, the contact resistance of the electrode is effectively reduced, the ohmic contact effect between the electrode and a semiconductor is improved, and the performance of the chip is improved by the method of directly carrying out in-situ annealing in the vacuum chamber after the electrode preparation is finished.
According to some embodiments of the invention, the housing is provided with a vent hole communicating with the vacuum chamber to introduce nitrogen gas into the vacuum chamber.
In some embodiments of the invention, the sample tray may hold a plurality of chips to be processed.
According to some embodiments of the invention, the temperature controller is connected to the sample tray.
Drawings
FIG. 1 is a flow chart of a method for fabricating a chip electrode according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating a chip structure according to an embodiment of the invention;
fig. 3 is a schematic structural diagram of a chip electrode manufacturing apparatus according to an embodiment of the present invention.
Reference numerals:
in the preparation of the apparatus 100, the apparatus is,
a housing 10, a vacuum chamber S1, a vent hole A1, a sample tray 20, a temperature controller 30,
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the present invention will be described in detail with reference to the accompanying drawings and preferred embodiments.
As shown in fig. 1, the method for manufacturing a chip electrode according to an embodiment of the present invention includes:
s101: placing the chip in a vacuum chamber for metallization deposition to form an electrode of the chip;
therefore, impurities can be prevented from entering in the process of metallization deposition to influence the purity and the performance of the electrode.
S102: heating the chip with the electrode, and maintaining for a preset time after the chip reaches a first preset temperature;
by heating the chip, a good ohmic connection between the electrode and the semiconductor can be formed.
S103: and cooling the chip in the vacuum chamber to a second preset temperature so as to finish the preparation of the chip electrode.
It can be understood that the chip is cooled in the vacuum chamber, so that the influence on the performance of the electrode caused by impurities entering in the electrode cooling process can be effectively avoided.
According to the preparation method of the chip electrode, the damage of the chip between the electrode preparation and the electrode annealing is effectively reduced, the contact resistance of the electrode is effectively reduced, the ohmic contact effect between the electrode and a semiconductor is improved, and the performance of the chip is improved by the method of directly carrying out in-situ annealing in the vacuum chamber after the electrode preparation is finished.
According to some embodiments of the invention, nitrogen is introduced into the vacuum chamber during the cooling of the chip. It can be understood that an inert gas environment can be formed in the vacuum chamber by introducing nitrogen into the vacuum chamber, and the influence on the overall performance of the chip caused by the introduction of impurities into the electrode in the chip cooling process is avoided.
In some embodiments of the invention, nitrogen is introduced into the vacuum chamber while heating the chip on which the electrodes are formed. It can be understood that an inert gas environment can be formed in the vacuum chamber by introducing nitrogen into the vacuum chamber, and the influence on the overall performance of the chip caused by the introduction of impurities into the electrodes in the chip heating process is avoided.
According to some embodiments of the invention, the first predetermined temperature is in a range of 160 ℃ to 180 ℃. That is, after the chip metallization deposition is completed to form the electrodes, the chip may be heated to 160 ℃ -180 ℃. Experiments prove that when the chip is heated to 160-180 ℃, good ohmic connection can be formed between the electrode and the semiconductor.
In some embodiments of the invention, the predetermined time is in the range of 2min to 5 min. That is, after heating the chip to 160 ℃ -180 ℃, the temperature can be maintained in the temperature range for 2min-5min to form a good ohmic connection between the electrode 450 and the semiconductor.
According to some embodiments of the invention, the second predetermined temperature is ambient room temperature. That is, when the temperature of the chip 40 is lowered to the ambient room temperature, the temperature lowering operation is completed.
As shown in fig. 3, the apparatus 100 for preparing a chip electrode 450 according to an embodiment of the present invention includes: a housing 10, a sample tray 20, and a temperature controller 30.
Wherein the case 10 defines a vacuum chamber S1, the sample tray 20 is used for placing the chip 40 to be processed, and the temperature controller 30 is used for heating the chip 40 to be processed. In the vacuum chamber S1, the electrode 450 of the chip 40 is prepared by the above-described method for preparing the chip electrode 450.
According to the preparation device 100 of the chip electrode 450, the method of directly performing in-situ annealing in the vacuum chamber S1 after the electrode 450 is prepared effectively reduces the damage of the chip 40 between the electrode 450 and the annealing of the electrode 450 after the electrode 450 is prepared, effectively reduces the contact resistance of the electrode 450, improves the ohmic contact effect between the electrode 450 and the semiconductor, and improves the performance of the chip 40.
According to some embodiments of the present invention, as shown in FIG. 3, the housing 10 may be provided with a vent A1 communicating with the vacuum chamber S1 for introducing nitrogen gas into the vacuum chamber S1. Thus, nitrogen gas can be introduced into the vacuum chamber S1 through the vent hole A1, but it is needless to say that another gas may be introduced into the vacuum chamber S1 to provide an inert gas atmosphere in the vacuum chamber S1.
In some embodiments of the invention, as shown in FIG. 2. The sample tray 20 may hold a plurality of chips 40 to be processed. Thus, the preparation of the electrodes 450 can be performed for a plurality of chips 40 to be processed at a time in the preparation apparatus 100. Thus, the manufacturing efficiency of the chip electrode 450 is improved, thereby reducing the production cost of the chip 40.
According to some embodiments of the present invention, as shown in FIG. 2, a temperature controller 30 may be coupled to the sample tray 20. Therefore, the chip 40 can be conveniently heated by the temperature controller 30, the heating efficiency of the temperature controller 30 is improved, and the energy consumption of the temperature controller 30 is reduced.
In order to reduce the contact resistance between the electrode 450 and the material, form good ohmic contact between the electrode 450 and the material, and avoid contamination possibly introduced in the continuous transfer process of the chip 40 to obtain the mercury cadmium telluride detector chip 40 with better performance, the invention provides a preparation method of the chip electrode 450 and a preparation device 100
The method for manufacturing the chip electrode 450 and the manufacturing apparatus 100 according to the embodiment of the invention are described in detail below with an embodiment. It is to be understood that the following description is only exemplary, and not a specific limitation of the invention.
The preparation method of the chip electrode 450 and the preparation device 100 provided by the invention can be applied to the preparation of the mercury cadmium telluride chip electrode 450.
Fig. 2 shows a schematic structural diagram of the chip 40, where the chip 40 includes: substrate 410, mercury cadmium telluride epitaxial layer 420, passivation layer 430, doped region 440, and electrode 450. A schematic diagram of a manufacturing apparatus 100 for preparing and in-situ annealing an electrode 450 is shown in fig. 3, the manufacturing apparatus 100 comprising: a housing 10, a sample tray 20, and a temperature controller 30. The housing 10 defines a vacuum chamber S1, and the housing 10 is provided with a vent a1 for introducing nitrogen gas. The sample disk 20 may house a plurality of mercury cadmium telluride chips 40.
The preparation method comprises the following steps:
1. the chip 40 to be processed is placed on the sample tray 20 of the preparation apparatus 100 and subjected to the metallization deposition.
2. And heating the sample disc 20 of the chip 40 on which the electrode 450 is deposited to 160-180 ℃ in the vacuum chamber S1, and keeping the temperature for 2-5 min so as to form good ohmic contact between the electrode 450 and the semiconductor. The semiconductor may be understood as an epitaxial layer 420 of mercury cadmium telluride.
3. In vacuum chamber S1, the temperature of chip 40 after completion of annealing of electrode 450 is naturally lowered.
4. After the sample tray 20 reaches the appropriate temperature, the sample tray 20 is removed from the vacuum chamber S1.
After the electrode 450 is prepared, the temperature of the sample plate 20 is controlled to a desired annealing temperature by the temperature controller 30, nitrogen or other desired gas is introduced through the vent hole a1, and after the chip 40 is annealed at the desired annealing temperature, the sample plate 20 is taken out after cooling to room temperature. In the whole process of growing and annealing the electrode 450, the chip 40 is always kept in the same vacuum chamber S1, a series of contamination caused in the process of transferring the chip 40 from the electrode 450 growing chamber to the annealing furnace can be effectively avoided, the influence on the chip 40 and the electrode 450 caused by the repeated temperature rise and drop process can be avoided, and the performance of the detector is improved.
Therefore, by directly carrying out in-situ annealing after the electrode 450 is prepared, the damage of the mercury cadmium telluride chip 40 between the electrode 450 and the annealing of the electrode 450 after the electrode 450 is prepared is effectively reduced, the contact resistance is effectively reduced, the ohmic contact effect is improved, and the performance of the detector is improved.
While the invention has been described in connection with specific embodiments thereof, it is to be understood that it is intended by the appended drawings and description that the invention may be embodied in other specific forms without departing from the spirit or scope of the invention.
Claims (10)
1. A method for preparing a chip electrode, comprising:
placing a chip in a vacuum chamber for metallization deposition to form an electrode of the chip;
heating the chip with the electrode, and maintaining for a preset time after the chip reaches a first preset temperature;
and in the vacuum chamber, cooling the chip to a second preset temperature to finish the preparation of the chip electrode.
2. The method for manufacturing a chip electrode according to claim 1, wherein nitrogen gas is introduced into the vacuum chamber during the cooling of the chip.
3. The method for producing a chip electrode according to claim 2, wherein nitrogen gas is introduced into the vacuum chamber while heating the chip on which the electrode is formed.
4. The method for preparing a chip electrode according to claim 1, wherein the first predetermined temperature is in a range of 160 ℃ to 180 ℃.
5. The method for preparing a chip electrode according to claim 1, wherein the predetermined time is in a range of 2min to 5 min.
6. The method for manufacturing a chip electrode according to claim 1, wherein the second predetermined temperature is an ambient room temperature.
7. A device for manufacturing a chip electrode, comprising:
a housing defining a vacuum chamber;
the sample tray is used for placing a chip to be processed;
the temperature controller is used for heating the chip to be processed;
wherein the electrode of the chip is prepared in the vacuum chamber by the method for preparing a chip electrode according to any one of claims 1 to 6.
8. The apparatus for preparing a chip electrode according to claim 7, wherein a vent hole communicating with the vacuum chamber is provided in the housing to introduce nitrogen gas into the vacuum chamber.
9. The apparatus for preparing a chip electrode according to claim 7, wherein the sample tray is capable of holding a plurality of chips to be processed.
10. The apparatus for preparing a chip electrode according to claim 7, wherein the temperature controller is connected to the sample tray.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911071818.1A CN110911524A (en) | 2019-11-05 | 2019-11-05 | Preparation method and preparation device of chip electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911071818.1A CN110911524A (en) | 2019-11-05 | 2019-11-05 | Preparation method and preparation device of chip electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110911524A true CN110911524A (en) | 2020-03-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911071818.1A Pending CN110911524A (en) | 2019-11-05 | 2019-11-05 | Preparation method and preparation device of chip electrode |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917152A (en) * | 2005-08-18 | 2007-02-21 | 中国科学院半导体研究所 | Method for preparing good ohmic contact on thin film of cubic boron nitride |
| CN101950769A (en) * | 2010-06-29 | 2011-01-19 | 上海大学 | Method for preparing back electrode of CdTe thin film solar cell |
| CN107968048A (en) * | 2016-10-20 | 2018-04-27 | 中芯国际集成电路制造(上海)有限公司 | A kind of method for reducing semiconductor devices back metal contacts resistance |
| CN108251800A (en) * | 2018-04-15 | 2018-07-06 | 山东建筑大学 | A kind of Cu-Al gradient films material and preparation method thereof |
-
2019
- 2019-11-05 CN CN201911071818.1A patent/CN110911524A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917152A (en) * | 2005-08-18 | 2007-02-21 | 中国科学院半导体研究所 | Method for preparing good ohmic contact on thin film of cubic boron nitride |
| CN101950769A (en) * | 2010-06-29 | 2011-01-19 | 上海大学 | Method for preparing back electrode of CdTe thin film solar cell |
| CN107968048A (en) * | 2016-10-20 | 2018-04-27 | 中芯国际集成电路制造(上海)有限公司 | A kind of method for reducing semiconductor devices back metal contacts resistance |
| CN108251800A (en) * | 2018-04-15 | 2018-07-06 | 山东建筑大学 | A kind of Cu-Al gradient films material and preparation method thereof |
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Application publication date: 20200324 |