CN103114324B - Long crystal method and the brilliant stove of length of applying this long crystal method - Google Patents
Long crystal method and the brilliant stove of length of applying this long crystal method Download PDFInfo
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- CN103114324B CN103114324B CN201110375157.9A CN201110375157A CN103114324B CN 103114324 B CN103114324 B CN 103114324B CN 201110375157 A CN201110375157 A CN 201110375157A CN 103114324 B CN103114324 B CN 103114324B
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- crucible
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- crystal
- cooler
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Abstract
The invention provides a kind of long crystal method and the brilliant stove of length of applying this long crystal method. This long brilliant stove comprises crucible, supporter, heater, cooler and at least one dividing plate. In this long crystal method, first dividing plate is arranged between crucible and supporter, to form (or definition) at least one low heat conductivity region and at least one high heat conduction area on crucible. Then, utilize heater that heat energy is provided, with the crystal raw material in melting crucible. Then, utilize the cooling crystal raw material being melted of cooler, so that crystal raw material forms crystal grain. In the time that crystal raw material forms crystal grain, the heat energy of crystal raw material is to see through supporter and dividing plate to conduct to cooler, so that the size of the crystal grain in abutting connection with place formation of low heat conductivity region and high heat conduction area is greater than the size of the crystal grain that other region of crucible forms.
Description
Technical field
The invention relates to a kind of long crystal method and the brilliant stove of length of applying this long crystal method, relating to especially one canForm the long crystal method and long brilliant stove of larger crystal grain.
Background technology
In recent years, because the problem of environmental pollution is more and more serious, a lot of countries start to develop new green energy resource and subtractThe problem of few environment pollution. Solar cell can transfer the luminous energy of the sun to electric energy, and this conversion can not produce any contaminativeMaterial, therefore solar cell comes into one's own gradually.
Solar cell is to utilize semi-conductive photoelectric effect directly to absorb sunshine to generate electricity. The generating of solar cellPrinciple is in the time that solar light irradiation is on solar cell, and solar cell can absorb solar energy, and also sees through afterwards solar energyThe PN junction of battery produces photoelectric current.
The semiconductor substrate that solar cell uses has number of different types, can be divided into haply monocrystalline silicon(MonocrystallineSilicon), polysilicon (Polycrystalline/MulticrystallineSilicon) withAnd non-crystalline silicon (AmorphousSilicon), wherein common with monocrystalline silicon and two kinds of substrates of polysilicon.
The composed atom of monocrystalline silicon is all arranged according to unalterable rules, and in polysilicon, each crystal grain inner region has separatelyArrangement mode, therefore, grain boundary structure between polysilicon grain is more imperfect and easily have impurity accumulation, causes polycrystalline silica-basedThe defect concentration of plate is higher, and affects the photoelectric transformation efficiency of battery.
Although monocrystaline silicon solar cell has higher conversion efficiency, the manufacturing cost of monocrystaline silicon solar cellCompared with polysilicon solar cell costliness. Therefore,, in order to reduce the manufacturing cost of solar cell with polycrystalline silicon substrate, needA kind of new long crystal method and long brilliant stove overcome the defect problem of polysilicon grain.
Summary of the invention
An aspect of of the present present invention is to be provided in a kind of long crystal method and long brilliant stove, and it can increase the chi of polysilicon grainVery little, the quality of raising polycrystalline silicon ingot. Certainly, thereby also can reduce the quantity of grain boundary, reduce the defect of polycrystalline silicon substrateDensity.
According to one embodiment of the invention, this long brilliant stove comprises crucible, supporter, heater, cooler and at least oneIndividual dividing plate. Crucible is to carry crystal raw material. Heater is that heat energy carrys out melting crystal raw material. Cooler is to absorb heat energyCarry out crystals cooled raw material. Supporter is in order to support crucible, and wherein supporter is to be positioned between crucible and cooler. Dividing plate is to arrangeIn between crucible and supporter, and there is at least one insulation part. Insulation part is to be adjacent to crucible and supporter, with shape on crucibleBecome at least one low heat conductivity region and at least one high heat conduction area. In the time of cooler crystals cooled raw material, cooler isSee through the heat energy that supporter and dividing plate carry out absorbing crystal raw material.
According to another embodiment of the present invention, in above-mentioned long crystal method, first provide long brilliant stove, this long brilliant stove comprisesCrucible, heater, cooler and supporter, wherein crucible is to carry crystal raw material; Heater is to send heat energy to meltMelt crystal raw material; Cooler is to absorb heat energy with crystals cooled raw material; Supporter be arranged between crucible and cooler withSupport crucible. Then, dividing plate is set between crucible and supporter, to form (or definition) at least one low heat conductivity on crucibleRegion and at least one high heat conduction area. Then, utilize heater that heat energy is provided, with the crystal raw material in melting crucible.Then, utilize the cooling crystal raw material being melted of cooler, so that crystal raw material forms crystal grain. When crystal raw material forms crystal grainTime, the heat energy of crystal raw material is to conduct to cooler through supporter and dividing plate, so that low heat conductivity region and high heat conductionThe size of crystal grain forming in abutting connection with place in region is greater than the size of the crystal grain that other region of crucible forms.
As shown in the above description, the long crystal method of the embodiment of the present invention and long brilliant stove be utilize between crucible and supporter everyPlate forms low heat conductivity region and high heat conduction area on crucible, forms and is longer than low heat conductivity region and high heat conduction areaAdjoiner on crystal grain can there is the size larger than other region crystal grain, can reduce whereby the quantity of grain boundary, reduceThe density of lattice defect, and then the generating efficiency of lifting solar cell.
Brief description of the drawings
For above and other objects of the present invention, feature and advantage can be become apparent, above especially exemplified by several better realitiesExecute example, and coordinate appended accompanying drawing, be described in detail below:
Fig. 1 is the schematic flow sheet illustrating according to the long crystal method of the embodiment of the present invention;
Fig. 2 a to Fig. 2 d is the brilliant furnace structure schematic diagram of length that illustrates each step of the long crystal method of the corresponding embodiment of the present invention;
Fig. 3 a and Fig. 3 b illustrate the hot-fluid situation in cooling step according to the reacting furnace of the embodiment of the present invention;
Fig. 4 illustrates the plan structure schematic diagram of dividing plate according to another embodiment of the present invention;
Fig. 5 a is the plan structure schematic diagram illustrating according to the dividing plate of further embodiment of this invention;
Fig. 5 b illustrates the plan structure schematic diagram that is provided with the crucible of dividing plate according to the below of further embodiment of this invention;
Fig. 6 a is the plan structure schematic diagram illustrating according to the dividing plate of further embodiment of this invention;
Fig. 6 b illustrates the plan structure schematic diagram that is provided with the crucible of dividing plate according to the below of further embodiment of this invention.
[primary clustering symbol description]
100: long crystal method 110: long brilliant stove provides step
120: dividing plate setting steps 130: heating steps
140: cooling step 200: long brilliant stove
200a: the first half 200b: the latter half
210: crucible 212: high heat conduction area
212a, 212b: high heat conduction area 214a, 214b: low heat conductivity region
214: low heat conductivity region 220: supporter
232,234: heater 240: cooler
250: dividing plate 252: through hole
254: low heat conductivity region 260: valve system
290: crystal raw material 310: large crystal grain
320: little crystal grain 450: dividing plate
452: heat-conducting part 454: insulation part
550: dividing plate 650: dividing plate
652: central partition plate 654: annular baffle
D: gap
Detailed description of the invention
Referring to Fig. 1 and Fig. 2 a to Fig. 2 d, Fig. 1 is the stream illustrating according to the long crystal method 100 of the embodiment of the present inventionJourney schematic diagram, Fig. 2 a to Fig. 2 d is the brilliant furnace structure signal of length that illustrates each step of the long crystal method of the corresponding embodiment of the present inventionFigure.
In long crystal method 100, first growing brilliant stove provides step 110, so that long brilliant stove 200 to be provided, as shown in Figure 2 a.Long brilliant stove 200 comprises crucible 210, supporter 220, heater 232 and 234, cooler 240. Crucible 210 is to carry silicon waferBody raw material 290, such as polycrystalline silicon raw material, reclaimed materials etc., and this reclaimed materials is in back-end process, can again reclaim half of use to becomeProduct silicon material. In the long crystal method 100 of the present embodiment, crystal raw material 290 can at high temperature be melt into liquid state, and for fear of earthenwareCrucible 210 at high temperature reacts with crystal raw material 290, and the present embodiment adopts the crucible 210 of quartz system. But, crystal raw material290 melting needs very high temperature, and the crucible 210 of quartz system can be softening under this high temperature, and therefore the present embodiment is at crucibleOutside 210, be provided with supporter 220 and support softening crucible 210, to avoid the crystal raw material 290 in crucible 210 to overflow crucibleOutside 210. In the present embodiment, supporter 220 is to make with resistant to elevated temperatures graphite material, but embodiments of the invention are not subject toBe limited to this. In addition, above-mentioned supporter 220 is to be separately fixed at the surrounding of crucible 210 and bottom by several piece graphite cake to sentenceSupport this crucible.
Provide after step 110 at long brilliant stove, then carry out dividing plate setting steps 120, dividing plate 250 to be set in crucible 210With between supporter 220, as shown in Figure 2 b. In the present embodiment, dividing plate 250 is bottom surface and the supporters 220 that are arranged at crucible 210In be positioned between the end face of graphite cake at below place, with the direction of heat flow of arranging in pairs or groups in follow-up cooling step, but embodiments of the inventionBe not limited to this.
Dividing plate 250 is made with the material of low thermal conductivity (far below air thermal conductivity factor), and has heat insulation effectReally. On dividing plate 250, have multiple through holes, so dividing plate 250 can on crucible 210, define at least one high heat conduction area andAt least one low heat conductivity region, wherein high heat conduction area is to correspond to through hole, and low heat conductivity region be correspond to everyThe solid section (insulating portion) of plate 250, wherein high heat conduction area is more easily more former by crystal by heat energy than low heat conductivity regionMaterial 290 conducts to supporter 220.
After dividing plate setting steps 120, then carry out heating steps 130, to utilize heater that heat energy melting crystalline substance is providedBody raw material 290, as shown in Figure 2 c. In the present embodiment, heater 232 and 234 be arranged at respectively crucible 210 top and underSide, to heat and to carry out melting crystal raw material 290 from the above and below of crucible 210. In addition, the brilliant stove of the length of the present embodiment also comprises lockDoor gear 260 or similarly device, this valve system 260 can be divided into the first half 200a and the latter half by long brilliant stove 200200b. Implement in sharp heating steps 130 at this, valve system 260 is closed condition, to isolate the first half 200a and secondPart 200b. So, in heating steps 130, position just can not pass at the heat energy of the heater 232 and 234 of the first half 200aBe handed to the cooler 240 that is positioned at the latter half 200b.
After heating steps 130, then carry out cooling step 140, with crystals cooled raw material 290, and make crystal raw material 290Grow up to the crystal grain of polysilicon. As shown in Figure 2 d, in cooling step 140, heater 232 and 234 is closed condition, cooler240 is opening, and valve system 260 is opening. In the time that valve system 260 is opened, the first half of long brilliant stove 200200a and the latter half 200b interconnect, and so cooler 240 can absorb the heat energy of the crystal raw material 290 being melted.
Please refer to Fig. 3 a, it is to illustrate the hot-fluid feelings in cooling step 140 according to the reacting furnace 100 of the embodiment of the present inventionCondition. As mentioned above, dividing plate 250 is made with the material of low thermal conductivity, and has multiple through holes 252, therefore dividing plate 250Can on crucible 210, form (or defining) high heat conduction area 212 and low heat conductivity region 214. In cooling step 140,Because cooler 240 is to be arranged at supporter 220 belows (being that supporter 220 is between cooler 240 and crucible 210), because ofThe heat energy of this crystal raw material 290 sees through the air of high heat conduction area 212 and below thereof mostly, conducts in thermal convection current modeOn supporter 220, then conduct to cooler 240 by supporter 220 again. In brief, it is cooling for the crucible in the present embodimentPattern be to take mode from bottom to top to carry out, cool gradually from lower to upper and form crystal ingot.
Because seeing through high heat conduction area 212 mostly, heat energy conducts, therefore at high heat conduction area 212 and low heat conductivityOn the adjoiner in region 214, can form the crystal grain 310 with large-size, on other region, form the crystalline substance of reduced sizeGrain 320. Via the quantity and the size that suitably design through hole 252, can make the crystal grain on crucible 210 be mostly large-sizedCrystal grain, as shown in Figure 3 b, wherein the value of the ratio w/d of distance w each other of through hole 252 and through hole diameter d can be 1/2To 2, but embodiments of the invention are not limited to this. In other words, the present invention sees through design as above, make to run through porose area withNon-through hole district produces local thermal field difference, and local grain is able to extending transversely and derives the crystal grain for large-size. And dividing plate250 is the material of low thermal conductivity coefficient, that is can the Yin Wendu range of decrease not excessive and cause crystallite dimension too small, affects crystal ingot quality.
In the time that the crystal grain of polysilicon is larger, represent that the quantity of grain boundary is few, therefore the density of lattice defect can be significantlyDecline. For solar cell, in the time that its polycrystalline silicon substrate using has lower lattice defect density, solar energyThe generating efficiency of battery can promote significantly.
Please refer to Fig. 4, it is to illustrate the plan structure schematic diagram of dividing plate 450 according to another embodiment of the present invention. Dividing plateThe 450th, be similar to dividing plate 250, it is also used to form on crucible 210 high heat conduction area 212 and low heat conductivity region 214, butDifference is that dividing plate 450 is the through holes 252 that substitute dividing plate 250 with the heat conducting material of height. As shown in Figure 4, dividing plate450 have heat-conducting part 452 and insulation part 454, and wherein heat-conducting part 452 is to make with the material of high thermal conductivity, and insulation partThe 454th, make with the material compared with low thermal conductivity, so can on crucible 210, form high heat conduction area 212 and low-heat and passLead region 214.
Referring to Fig. 5 a and Fig. 5 b, Fig. 5 a is the knot of overlooking illustrating according to the dividing plate 550 of further embodiment of this inventionStructure schematic diagram, Fig. 5 b is the plan structure schematic diagram that is provided with the crucible 210 bottom surface places of dividing plate 550 below illustrating. Dividing plate 550 isBe similar to dividing plate 250, it is also used to form on crucible 210 high heat conduction area 212 and low heat conductivity region 214, but differentPart is that dividing plate 550 is for ring-type. The size of annular baffle 550 is the bottom surfaces that are less than crucible 210, so when annular baffle 550While being arranged at crucible 210 below, can on crucible 210, form the high heat conduction area 212a of a ring-type, a block heightThe low heat conductivity region 214 of heat conduction area 212b and a ring-type, as shown in Figure 5 b.
Referring to Fig. 6 a and Fig. 6 b, Fig. 6 a is the knot of overlooking illustrating according to the dividing plate 650 of further embodiment of this inventionStructure schematic diagram, Fig. 6 b is the plan structure schematic diagram that is provided with the crucible 210 of dividing plate 650 below illustrating. Dividing plate 650 is to be similar toDividing plate 250, it is also used to form on crucible 210 high heat conduction area 212 and low heat conductivity region 214, but difference existsFormed by central partition plate 652 and annular baffle 654 in dividing plate 650. Annular baffle 654 is to be set around central partition plate 652, andGapped D therebetween. In the time that dividing plate 650 is arranged at crucible 210 below, can on crucible 210, form the high heat conduction of a ring-typeLow heat conductivity region 214a and the low thermal conductivity region 214b of bulk of region 212, a ring-type, as shown in Figure 6 b.
The above embodiments of the present invention are that dividing plate is placed between crucible bottom surface and supported underneath thing, but in fact implementTime, needs that can be optionally and adjusting, for example, when the heater in long brilliant stove is while being positioned at the left and right sides of crucible, dividing plate is alsoCan be placed on crucible both sides and supported on both sides thing is between graphite cake, so that (the length that crystal grain is shaped when cooling after heatingIn brilliant process), produce as the above-mentioned effect that grows larger crystallite dimension, thereby promoted quality.
Although the present invention discloses as above with several embodiment, so it is not in order to limit the present invention, under the present inventionIn technical field any have conventionally know the knowledgeable, without departing from the spirit and scope of the present invention, when can do various changes withRetouching, the scope that therefore protection scope of the present invention ought define depending on appending claims is as the criterion.
Claims (10)
1. a long brilliant stove, is characterized in that, comprises:
One crucible, in order to carry a crystal raw material;
One heater is to provide heat energy with this crystal raw material of melting;
One cooler is to absorb heat energy with cooling this crystal raw material;
One supporter, is positioned between this crucible and this cooler, in order to support this crucible; And
At least one dividing plate, is arranged between this crucible and this supporter, and has at least one insulation part, and this insulation part is adjacent to this earthenwareCrucible and this supporter, to form at least one low heat conductivity region and at least one high heat conduction area on this crucible;
Wherein, in the time of cooling this crystal raw material of this cooler, this cooler is to see through this supporter to inhale with this at least one dividing plateReceive the heat energy of this crystal raw material.
2. the brilliant stove of length according to claim 1, is characterized in that, this dividing plate also has multiple through holes, so that this crystalThe mode that the heat energy of raw material institute dissipation sees through thermal convection current is absorbed by this cooler, and on this crucible, forms this at least one high heatConductive area.
3. the brilliant stove of length according to claim 2, is characterized in that, the spacing distance of those through holes and this through hole straightThe value of the ratio in footpath is 1/2 to 2.
4. the brilliant stove of length according to claim 1, is characterized in that, this dividing plate also has at least one heat-conducting part, this heat-conducting partTo be adjacent to this crucible and this supporter, to form this at least one high heat conduction area on this crucible.
5. the brilliant stove of length according to claim 1, is characterized in that, this crucible has a crucible bottom surface, and this supporter hasOne supporter end face, this dividing plate is to be positioned between this crucible bottom surface and this supporter end face.
6. the brilliant stove of length according to claim 1, is characterized in that, this at least one insulation part of this dividing plate is by septum cordis inPlate and an annular baffle form, and this annular baffle is to be set around this central partition plate.
7. the brilliant stove of length according to claim 1, is characterized in that, the material of this supporter is graphite.
8. the brilliant stove of length according to claim 1, is characterized in that, the material of this crucible is quartz.
9. a long crystal method, is characterized in that, comprises:
One long brilliant stove is provided, and the brilliant stove of this length comprises:
One crucible is carrying one crystal raw material;
One heater is to send heat energy with this crystal raw material of melting;
One cooler is to absorb heat energy with cooling this crystal raw material; And
One supporter, is positioned between this crucible and this cooler, in order to support this crucible;
One dividing plate is set between this crucible and this supporter, to form at least one low heat conductivity region and at least one on this crucibleHigh heat conduction area;
Utilize this heater to provide heat energy melting this crystal raw material; And
Utilize this cooler to carry out cooling this crystal raw material being melted, so that this crystal raw material forms crystal grain;
Wherein, in the time that this crystal raw material forms crystal grain, the heat energy of this crystal raw material is to see through this supporter to conduct with this dividing plateTo this cooler, so that at least one of this at least one low heat conductivity region and this at least one high heat conduction area forms in abutting connection with placeThe size of crystal grain be greater than the size of the crystal grain that other region of this crucible forms.
10. long crystal method according to claim 9, is characterized in that, this cooler is to utilize the mode of thermal convection current to come coldBut this supporter.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110375157.9A CN103114324B (en) | 2011-11-16 | 2011-11-16 | Long crystal method and the brilliant stove of length of applying this long crystal method |
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| CN201110375157.9A CN103114324B (en) | 2011-11-16 | 2011-11-16 | Long crystal method and the brilliant stove of length of applying this long crystal method |
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| CN103114324A CN103114324A (en) | 2013-05-22 |
| CN103114324B true CN103114324B (en) | 2016-05-04 |
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| CN201110375157.9A Expired - Fee Related CN103114324B (en) | 2011-11-16 | 2011-11-16 | Long crystal method and the brilliant stove of length of applying this long crystal method |
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| TWI541390B (en) * | 2015-01-07 | 2016-07-11 | 茂迪股份有限公司 | Method for manufacturing mono-like silicon |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490313A (en) * | 2006-07-14 | 2009-07-22 | 东洋炭素株式会社 | Protective sheet for crucible and crucible device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5334315B2 (en) * | 2009-09-30 | 2013-11-06 | コバレントマテリアル株式会社 | Silica glass crucible for silicon single crystal pulling |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490313A (en) * | 2006-07-14 | 2009-07-22 | 东洋炭素株式会社 | Protective sheet for crucible and crucible device using the same |
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| CN103114324A (en) | 2013-05-22 |
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