CN103106988A - Thermistor element - Google Patents
Thermistor element Download PDFInfo
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- CN103106988A CN103106988A CN2011103647683A CN201110364768A CN103106988A CN 103106988 A CN103106988 A CN 103106988A CN 2011103647683 A CN2011103647683 A CN 2011103647683A CN 201110364768 A CN201110364768 A CN 201110364768A CN 103106988 A CN103106988 A CN 103106988A
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Abstract
The invention discloses a thermistor element which comprises a sheet type resistor element, a first insulation layer, a first electrode, a second electrode and a first heat conduction layer, wherein the sheet type resistor element comprises a first conductive member, a second conductive member and a polymer material layer overlapped between the first conductive member and the second conductive member, and the polymer material layer has a positive or negative temperature coefficient characteristic; the first insulation layer is arranged on the first conductive member, the first electrode is electrically connected with the first conductive member; and the second electrode is electrically connected with the second conductive member and is electrically isolated from the first electrode, and the first heat conduction layer is arranged on the surface of the first insulation layer and has the heat conduction rate of at least 30W/mK and is 15-250micrometers thick. According to the thermistor element, the heat conduction efficiency can be greatly increased, and the maintaining current of a product is improved.
Description
Technical field
The present invention relates to the variable thermistor element of SMD LED surface-mount device LED (SMD) made with conducting polymer composite; as positive temperature coefficient (PTC) element, negative temperature coefficient (NTC) element; it can be applicable to do the sensing of overcurrent protection and abnormal temperature environment on printed circuit board (PCB) (PCB).
Background technology
Owing to having positive temperature coefficient (Positive Temperature Coefficient; PTC) resistance of the conducing composite material of characteristic has the sharp characteristic of reaction to variations in temperature, can be used as the material of current sensing element, has been widely used on over-current protecting element or circuit element at present.Because the resistance of PTC conducing composite material under normal temperature can be kept utmost point low value, make circuit or battery be able to normal operation.But when circuit or battery generation overcurrent (over-current) or when crossing the phenomenon of high temperature (over-temperature), its resistance value can be increased to a high resistance state (at least 10 moment
2More than Ω), and with excessive current reduction, to reach the purpose of protection battery or circuit element.
In the high-density line design and manufacture, in the requirement of size, need reach light, thin, small requirement to protection component, and install the design that need reach the SMD LED surface-mount device LED element.Therefore, with the PTC element that high-molecular organic material is made, be designed to the surface mount electronic component of different types.Yet, be subject to the restriction of component size, and heat passes the factors such as bad, cause keeping electric current (hold current) and can't promoting of product.In addition, because the thermal insulation of element is too high, also may cause the problem too low to the sensitiveness of ambient temperature.
Summary of the invention
In order to overcome above designed defective, characteristics of the present invention are thermistor element surface increase heat-conducting layer, to quick conductive.Lift elements keeps electric current and the temperature sense that increases for environment whereby.
According to one embodiment of the invention, thermistor element comprises sheet-type resistive element, the first insulating barrier, the first electrode, the second electrode, the first heat-conducting layer.This sheet-type resistive element comprises the first conductive member, the second conductive member and polymer material layer, and wherein this polymer material layer is stacked between the first conductive member and the second conductive member, and has the characteristic of positive temperature or negative temperature coefficient.The first insulating barrier is arranged on this first conductive member, and the extension of the surface of this first insulating barrier consists of the first plane.The first electrode is electrically connected this first conductive member.The second electrode is electrically connected this second conductive member, and with the first electrode electrical isolation.The first heat-conducting layer is arranged at this first surface of insulating layer, and its thermal conductivity is at least 30W/mK, and the thickness of the first heat-conducting layer is 15～250 μ m.In one embodiment, the first electrode and second electrode of part are formed on the first plane, and and the first heat-conducting layer forms the first surface of thermistor element, and in first surface the area summation of this first electrode, the second electrode and the first heat-conducting layer be first surface area 40～90%.
In one embodiment, thermistor element separately comprises the second insulating barrier and the second heat-conducting layer, and this second insulating barrier is arranged on this second conductive member, and the extension of the surface of this second insulating barrier consists of the second plane.The second heat-conducting layer is arranged at this second surface of insulating layer, some of the first electrodes, the second electrode are formed on this second plane, and and the second heat-conducting layer forms the second surface of thermistor element, and in this second surface the area summation of the first electrode, the second electrode and the second heat-conducting layer be second surface area 40～90%.
In one embodiment, can utilize heat-conducting connecting to connect aforementioned the first conductive member and the first heat-conducting layer, or the second conductive member and the second heat-conducting layer.
The present invention increases heat-conducting area or the heat conduction/conductive path of element by improving traditional SMD product appearance, and also can arrange in pairs or groups possesses the weld pad that heat passes effect, with the hot transfer efficiency of lift elements significantly whereby, and then improving product keep electric current.In addition, the present invention also can increase the sensitiveness for ambient temperature, so that cell device protection and various electronics applications to be provided.
Description of drawings
Figure 1A and Figure 1B are the schematic diagram of the thermistor element of first embodiment of the invention;
Fig. 2 A and Fig. 2 B are the schematic diagram of the thermistor element of second embodiment of the invention;
Fig. 3 is the schematic diagram of the thermistor element of third embodiment of the invention;
Fig. 4 is the schematic diagram of the thermistor element of fourth embodiment of the invention.
Wherein, description of reference numerals is as follows:
10,20,30,40 thermistor elements
11 resistive elements
12 first conductive members
13 second conductive members
14 polymer material layers
15 first insulating barriers
16 second insulating barriers
17 first electrodes
18 second electrodes
19 first conducting connecting parts
20 second conducting connecting parts
21 first heat-conducting layers
22 second heat-conducting layers
24 first surfaces
25 welding resisting layers
26 second surfaces
27 first heat-conducting connecting
28 second heat-conducting connecting
31 first planes
32 second planes
41 resistive elements
42 first conductive members
43 second conductive members
44 polymer material layers
45 welding resisting layers
46 conductive layers
47 first electrodes
48 second electrodes
49 conducting connecting parts
51 surfaces
53 heat-conducting layers
57 heat-conducting connecting
61 planes
Embodiment
For above and other technology contents of the present invention, feature and advantage can be become apparent, cited below particularlyly go out related embodiment, and coordinate accompanying drawing, be described in detail below:
Figure 1A illustrates the thermistor schematic diagram of first embodiment of the invention.Figure 1B illustrates the vertical view of thermistor element shown in Figure 1.Thermistor 10 comprises sheet-type resistive element 11, the first insulating barrier 15, the second insulating barrier 16, the first electrode 17 and the second electrode 18.Sheet-type resistive element 11 comprises the first conductive member 12, the second conductive member 13 and polymer material layer 14, wherein this polymer material layer 14 is stacked between the first conductive member 12 and the second conductive member 13, wherein contain conducting particles, and have the characteristic of positive temperature or negative temperature coefficient.Being applicable to macromolecular material of the present invention comprises: polyethylene, polypropylene, poly-fluorine alkene, aforesaid mixture and co-polymer etc.Conducting particles can be metallic, carbon contg particle, metal oxide, metal carbides, or the mixture of previous materials.The first insulating barrier 15 is arranged on the first conductive member 12, and the second insulating barrier 16 is arranged on the second conductive member 13. Insulating barrier 15,16 can comprise polypropylene, glass fibre or heat sink material.Wherein heat sink material comprises the macromolecular material of macromolecular material, tool thermoplastics type plastic cement and the mutual penetrant structure of thermoset plastic of thermoset plastic and fiber, it is exposed in TaiWan, China patent publication No. 200816235, notification number I339088 and publication number 201101342, is incorporated herein herein.Wherein the thermal conductivity of this macromolecule heat sink material is at least 0.5W/mK, and is the preferred embodiments of the present invention more than 1W/mK, 2W/mK, 3W/mK, 4W/mK or 5W/mK.
The first electrode 17 comprises a part and is arranged on this first insulating barrier 15, that is is formed on first plane 31 of extension on the first insulating barrier 15 surfaces.The first electrode 17 comprises another part and is arranged on this second insulating barrier 16, that is is formed on second plane 32 of extension on the second insulating barrier 16 surfaces.This first electrode 17 is by first conducting connecting part 19 these first conductive members 12 of electrical connection.Similarly, the second electrode 18 comprises a part and is arranged on this first insulating barrier 15 or the first plane 31, and comprises another part and be arranged on this second insulating barrier 16 or the second plane 32.This second electrode 18 is by second conducting connecting part 20 these second conductive members 13 of electrical connection, and with the first electrode 17 electrical isolation.In the present embodiment, compared to traditional electrode setting, the first electrode 17 parts that are arranged at the first insulating barrier 15 surfaces are extended to the second electrode 18 directions, as the first heat-conducting layer 21.Similarly, the second electrode 18 parts that are arranged at the second insulating barrier 16 surfaces are extended to the first electrode 17 directions, form the second heat-conducting layer 22.Easy speech, the first electrode 17 can be considered and comprises the first heat-conducting layer 21, and this first heat-conducting layer 21 is the extension of the first electrode 17.The second electrode 18 can be considered and comprises the second heat-conducting layer 22, and this second heat-conducting layer 22 is the extension of the second electrode 18.
The first heat-conducting layer 21 and the second heat-conducting layer 28 can adopt the thermal conductivitys such as metallic nickel, copper, aluminium, lead, tin, silver, gold or its alloy greater than the material of 30W/mK, especially have better heat conduction efficiency with thermal conductivity greater than the aluminium (approximately 238W/mK) of 200W/mK and greater than the copper (approximately 397W/mK) of 300W/mK, silver-colored, golden etc., and be better selection of the present invention.
Profess it, resistive element 11 upper and lower surfaces are respectively arranged with the first conductive member 12 and the second conductive member 13, and extend to separately the opposite end surface of sheet-type resistive element 11.This conductive member 12,13 can be by a planar metal book film, the general etching mode of warp is (as laser reconditioning (Laser Trimming), chemical etching or mechanical system) produce top and bottom, a first from left right each one, asymmetric breach (breach that the stripping metal film produces).The material of above-mentioned conductive member can be nickel, copper, zinc, silver, gold, reaches alloy or multilayer material that aforementioned metal forms.In addition, described breach can be rectangle, semicircle, triangle or irregular shape and pattern, and only this breach area is to be no more than the 25% better of the single face gross area.
Above-mentioned breach is after the moulding of stripping metal film, can use various good then property glued membrane (is insulating barrier 15,16, the glued membrane of making as epoxy resin and glass fabric), with the copper metal film of this resistive element 11 and outer each a slice up and down through the hot-press solidifying driving fit.Afterwards, can with the outer field copper film in up and down through engraving method, produce electrode, as shown in figure 17,18.
Left and right two end electrodes 17,18 can be by conducting connecting part 19,20 or the comprehensive plating mode that cuts face, and the Electrode selectivity vertical conducting in each district up and down is connected.The first heat-conducting layer 21 and the first and second electrodes 17,18 or the second heat-conducting layer 22 and the first and second electrodes 17,18 can utilize and etch the interval and form electrical isolation.Wherein this interval is at least 15 μ m, 20 μ m or 30 μ m.
In one embodiment, 21 of 22 of the first electrode 17 and the second heat-conducting layers, the second electrode 18 and the first heat-conducting layers with the welding resisting layer 25 of insulation as isolating.Although the welding resisting layer 25 as isolation is rectangle in the present embodiment, the isolation of other shapes as semicircle, arc, triangle or irregularly shaped and pattern also applicable to the present invention.
Conducting connecting part 19 in the present embodiment, 20 is described as an example of semicircle via example.Can utilize electroless-plating or electro-plating method to plate one deck conducting metal (as copper or gold) on the hole wall of via, to reach the purpose that connects upper/lower electrode.Except semicircle, the cross sectional shape of via can be circle, 1/4 circle, arc, square, rhombus, rectangle, triangle or polygon etc.
The first electrode 17, the second electrode 18 and the first heat-conducting layer 21 that are formed at (that is first plane 31) on this first insulating barrier 15 form the first surface 24 of thermistor element 10; The first electrode 17, the second electrode 18 and the second heat-conducting layer 22 that are formed at (that is second plane 32) on the second insulating barrier 16 form the second surface 26 of thermistor element 10.
The percentage that in first surface 24, the area summation of this first electrode 17, the second electrode 18 and the first heat-conducting layer 21 accounts for whole first surface 24 areas can be approximately 40～90%, and particularly 45～85%, be preferably 50～80%.In practical application, aforementioned percentage can be 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%.Similarly, the percentage that in second surface 26, the area summation of this first electrode 17, the second electrode 18 and the second heat-conducting layer 22 accounts for whole second surface 26 areas can be approximately 40～90%, and particularly 45～85%, be preferably 50～80%.In practical application, this ratio can be 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%.
Fig. 2 A illustrates the thermistor element schematic diagram of second embodiment of the invention.Fig. 2 B illustrates the vertical view of thermistor element shown in Fig. 2 A.Be similar to the thermistor element 10 shown in Figure 1A and 1B, thermistor element 20 also comprises sheet-type resistive element 11, insulating barrier 15 and 16, the first electrode 17, the second electrode 18 etc.From different shown in Figure 1A and 1B to be in the first heat-conducting layer 21 be not the extension of the first electrode 17, but be located at separately on the first insulating barrier 15.The second heat-conducting layer 22 is not the extension of the second electrode 18, but is located at separately on the second insulating barrier 16.In one embodiment, the first heat-conducting layer 21 and the first and second electrodes 17,18 be to utilize etching form the interval or isolate with welding resisting layer 25.The second heat-conducting layer 22 and the first and second electrodes 17,18 also can utilize etching form the interval or isolate with welding resisting layer 25.The area summation that the area summation of the first electrode 17, the second electrode 18 and the first heat-conducting layer 21 accounts for the ratio of whole first surface 24 areas and the first electrode 17, the second electrode 18 and the second heat-conducting layer 22 accounts for the ratio of whole second surface 26 areas equally can be described with reference to the first embodiment.
Fig. 3 illustrates the thermistor element schematic diagram of third embodiment of the invention.Thermistor element 30 is in the first heat-conducting layer 21 and 12 of the first conductive members, heat-conducting connecting 27 to be set in addition compared to the thermistor element 20 shown in Fig. 2 A, to increase the heat conduction efficiency of resistive element 11.Similarly, in the second heat-conducting layer 22 and 13 of the second conductive members, heat-conducting connecting 28 can be set.Heat-conducting connecting 27,28 can adopt and heat-conducting layer 21,22 identical thermal conductivitys such as metallic nickel, copper, aluminium, lead, tin, silver, gold or its alloy material greater than 30W/mK, especially with thermal conductivity greater than the aluminium of 200W/mK and have the heat conduction efficiency of the best greater than copper, silver, gold or its alloy of 300W/mK, and be better selection of the present invention.
Above design and production method, can increase wherein the resistive element number of plies to two layer more than (namely comprising plural resistive element 11) carry out connect in parallel, reach the surface mount resistive element of Multi-layer Parallel formula.In addition, connect the heat-conducting connecting 27 of the first heat-conducting layer 21 and the first conductive member 12, or the number that connects the heat-conducting connecting 28 of the second heat-conducting layer 22 and the second conductive member 13 can be a plurality of, with the increase heat transfer efficiency.
Fig. 4 illustrates the thermistor element schematic diagram of fourth embodiment of the invention.Thermistor 40 comprises sheet-type resistive element 41, insulating barrier 55, the first electrode 47 and the second electrode 48.Sheet-type resistive element 41 comprises the first conductive member 42, the second conductive member 43 and polymer material layer 44, wherein this polymer material layer 44 is stacked between the first conductive member 42 and the second conductive member 43, wherein contain conducting particles, and have the characteristic of positive temperature or negative temperature coefficient.Insulating barrier 55 is arranged on the first conductive member 42.The first electrode 47 is electrically connected to this first conductive member 42 by conductive layer 46.The first electrode 47 is formed on the extension plane 61 on insulating barrier 55 surfaces.The second electrode 48 is arranged at (that is plane 61) on this insulating barrier 55, and by these second conductive members 43 of conducting connecting part 49 electrical connection, and with the first electrode 47 electrical isolation.Heat-conducting layer 53 is arranged at insulating barrier 55 surfaces.In one embodiment, heat-conducting layer 53 preferably is connected in the first conductive member 42 by heat-conducting connecting 57.Wherein be formed at the surface 51 of the first electrode 47, the second electrode 48 and heat-conducting layer 53 formation thermistor elements 40 on plane 61, and the area summation of this first electrode 47, the second electrode 48 and heat-conducting layer 53 is 40～90% of surface 51 area, particularly 45～85%, be preferably 50～80%.In practical application, this ratio can be 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%.
Also be exposed in TaiWan, China patent announcement numbers 415624 and notification number I282696 about other structure kenels of the thermistor element of other SMD LED surface-mount device LEDs.The dependency structure kenel of above-mentioned each patent discloses and is incorporated herein herein.The thermistor element of above various structures all can be used the present invention and set up heat-conducting layer or further set up heat-conducting connecting, and increases radiating effect.In addition, the thickness of aforementioned heat-conducting layer and also can be 18 μ m, 35 μ m, 70 μ m, 140 μ m or 210 μ m between 15～250 μ m, and wherein thicker heat-conducting layer has better heat-conducting effect.
The present invention is compared to original SMD element framework, increase is as the size of for example copper foil circuit of heat-conducting layer and increase for example copper pylon structure as heat-conducting connecting, make the SMD element when energising, unnecessary thermal source can be transmitted to circuit, or on the circuit substrate that uses.Under the situation of effectively inhibition temperature rise, can significantly promote the electric current of keeping of thermistor element, and satisfy large electric current demand, simultaneously by circuit design, also can promote heat transfer, effectively lift elements is for the sensitiveness of ambient temperature.
Technology contents of the present invention and technical characterstic disclose as above, yet those of ordinary skills still may be based on teaching of the present invention and announcements and done all replacement and modifications that does not deviate from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to the content that embodiment discloses, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by following claim scope.
Claims (18)
1. a thermistor element, is characterized in that, comprising:
One sheet-type resistive element comprises the first conductive member, the second conductive member and polymer material layer, and wherein this polymer material layer is stacked between this first conductive member and this second conductive member, and has the characteristic of positive temperature or negative temperature coefficient;
One first insulating barrier is arranged on this first conductive member;
One first electrode is electrically connected this first conductive member;
One second electrode is electrically connected this second conductive member, and with this first electrode electrical isolation; And
One first heat-conducting layer is arranged at this first surface of insulating layer, and this first heat-conducting layer thermal conductivity is at least 30W/mK, and its thickness is between 15～250 μ m.
2. according to claim 1 thermistor element, wherein the extension of the surface of this first insulating barrier consists of the first plane, this second electrode of this first electrode of part and part is formed on this first plane, and and this first heat-conducting layer forms the first surface of this thermistor element, and in this first surface the area summation of this first electrode, this second electrode and this first heat-conducting layer be this first surface area 40～90%.
3. according to claim 1 thermistor element, it also comprises one second insulating barrier and one second heat-conducting layer, and this second insulating barrier is arranged on this second conductive member, and this second heat-conducting layer is arranged at this second surface of insulating layer.
4. according to claim 3 thermistor element, wherein the extension of the surface of this second insulating barrier consists of the second plane, this second electrode of this first electrode of part and part is formed on this second plane, and and this second heat-conducting layer forms the second surface of this thermistor element, and in this second surface the area summation of this first electrode, this second electrode and this second heat-conducting layer be this second surface area 40～90%.
5. according to claim 3 thermistor element, wherein this first electrode and this second electrode are formed at this first insulating barrier and this second surface of insulating layer.
6. according to claim 1 thermistor element, wherein this first heat-conducting layer extension that is this first electrode.
7. according to claim 2 thermistor element, wherein this first heat-conducting layer is arranged between this first electrode and this second electrode on this first plane.
8. according to claim 1 thermistor element, be wherein electrical isolation between this first heat-conducting layer and this first electrode and this second electrode.
9. according to claim 8 thermistor element, wherein between this first heat-conducting layer and this first electrode or this second electrode between every being at least 15 μ m.
10. according to claim 1 thermistor element, be wherein to isolate with welding resisting layer between this first heat-conducting layer and this first electrode and this second electrode.
11. thermistor element according to claim 1, wherein this first heat-conducting layer comprises nickel, copper, aluminium, lead, tin, silver, gold or its alloy.
12. thermistor element according to claim 1, it also comprises the heat-conducting connecting by this first insulating barrier, and this heat-conducting connecting connects this first heat-conducting layer and this first conductive member.
13. thermistor element according to claim 12, wherein the thermal conductivity of this heat-conducting connecting is at least 30W/mK.
14. thermistor element according to claim 12, wherein this heat-conducting connecting comprises nickel, copper, aluminium, lead, tin, silver, gold or its alloy.
15. thermistor element according to claim 1, wherein this first insulating barrier comprises polypropylene, glass fibre or heat sink material.
16. thermistor element according to claim 1, wherein the thermal conductivity of this first insulating barrier is at least 0.5W/mK.
17. thermistor element according to claim 1, it also comprises the first conducting connecting part and the second conducting connecting part, wherein this first conducting connecting part is used for this first electrode of electrical connection and this first conductive member, and this second conducting connecting part is used for connecting this second electrode and this second conductive member.
18. thermistor element according to claim 2, wherein in this first surface the area summation of this first electrode, this second electrode and this first heat-conducting layer be first surface area 50～80%.
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| CN201110364768.3A CN103106988B (en) | 2011-11-11 | 2011-11-11 | Thermistor element |
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| CN103106988B CN103106988B (en) | 2015-10-14 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104658726A (en) * | 2013-11-25 | 2015-05-27 | 聚鼎科技股份有限公司 | Overcurrent protection element and protection circuit board thereof |
| CN109429459A (en) * | 2017-08-31 | 2019-03-05 | Seg汽车德国有限公司 | The machine of structural unit with shell and the resistive element being arranged in the shell and the electricity with this structural unit |
| CN110957088A (en) * | 2018-09-27 | 2020-04-03 | 聚鼎科技股份有限公司 | Positive temperature coefficient element |
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| JP2006278786A (en) * | 2005-03-29 | 2006-10-12 | Mitsubishi Materials Corp | Temperature detection element |
| JP2007027541A (en) * | 2005-07-20 | 2007-02-01 | Tateyama Kagaku Kogyo Kk | Ntc thermistor element and its manufacturing method |
| TW200726306A (en) * | 2005-12-27 | 2007-07-01 | Polytronics Technology Corp | Surface-mounted over-current protection device |
| CN101321887A (en) * | 2005-11-30 | 2008-12-10 | 岛根县 | Metal-based composite material containing both micro-sized carbon fiber and nano-sized carbon fiber |
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| TW415624U (en) * | 1999-04-26 | 2000-12-11 | Polytronics Technology Corp | Surface mounted electric apparatus |
| JP2006278786A (en) * | 2005-03-29 | 2006-10-12 | Mitsubishi Materials Corp | Temperature detection element |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104658726A (en) * | 2013-11-25 | 2015-05-27 | 聚鼎科技股份有限公司 | Overcurrent protection element and protection circuit board thereof |
| CN109429459A (en) * | 2017-08-31 | 2019-03-05 | Seg汽车德国有限公司 | The machine of structural unit with shell and the resistive element being arranged in the shell and the electricity with this structural unit |
| CN110957088A (en) * | 2018-09-27 | 2020-04-03 | 聚鼎科技股份有限公司 | Positive temperature coefficient element |
| CN110957088B (en) * | 2018-09-27 | 2021-11-05 | 聚鼎科技股份有限公司 | Positive temperature coefficient element |
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| CN103106988B (en) | 2015-10-14 |
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