CN101673602A - Resistive element and manufacturing method thereof - Google Patents
Resistive element and manufacturing method thereof Download PDFInfo
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- CN101673602A CN101673602A CN200810212796A CN200810212796A CN101673602A CN 101673602 A CN101673602 A CN 101673602A CN 200810212796 A CN200810212796 A CN 200810212796A CN 200810212796 A CN200810212796 A CN 200810212796A CN 101673602 A CN101673602 A CN 101673602A
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Abstract
The invention provides a resistive element and a manufacturing method thereof, which are suitable for sensing current in a circuit. The resistive element comprises a bearing body, a resistive layer arranged on the bearing body, an electrode unit electrically connected with the resistive layer, an upper oxide layer directly arranged on a part of the resistive layer, and a protective layer coveringa part of the upper oxide layer, wherein the resistive layer comprises a copper alloy, while the upper oxide layer comprises an oxide of the copper alloy. The arrangement of the upper oxide layer canextend a contact area and strengthen adhesion between the protective layer and the resistive layer, and can increase the safety of the resistive element at a high temperature; and both the resistivityand the temperature coefficient of resistance of the upper oxide layer comprising the oxide of the copper alloy are close to those of the copper alloy, so the characteristics of the resistive elementare not influenced significantly.
Description
Technical field
The invention relates to a kind of resistive element, especially about a kind of resistive element and manufacture method thereof in order to current sensor.
Background technology
Usually be equiped with in electronic installation is that resistive element for one of passive device is in order to the electric current in the sensing circuit.This kind in order to the resistive element of current sensor must have usually low-resistance value (resistancevalue) and low resistance temperature coefficient (temperature coefficient ofresistance, TCR).
United States Patent (USP) the 7th, 238 discloses a kind of known resistance element No. 296, utilizes the thick film screen printing technology that resistive layer is printed on the substrate, and back cover glass protective layer also utilizes laser reconditioning technological adjustment resistance value, last protective mulch; And resistive layer is to adopt the metal dust of copper manganese germanium (Cu-Mn-Ge) and the alloy of Cu oxide (Copper-Oxide Power) powder, to reduce resistance value and TCR.So adhesive force is preferably arranged between substrate and resistive layer in order to make, except that adding the Cu oxide powder, also need to add glass powder (glass powder) in the resistive layer and be used as cement, and glass powder can form impurity make TCR be not easy control, and the ratio excessive (greater than 10wt%) that glass powder and Cu oxide powder add can make resistance value increase and make resistive layer form loose structure, so need tighten control on the technology glass powder and Cu oxide powder addition.In addition, resistive element needs to carry out sintering in manufacture process under 960 ℃～980 ℃ nitrogen environment, and the copper in the resistive layer is the material of easy oxidation, makes that the degree of difficulty of technology is higher.
United States Patent (USP) the 6th, 771 discloses another kind of known resistance element No. 160, utilizes the mode of evaporation, sputter, chemical plating or plating, makes the multilayer resistive layer attached on the Copper Foil, and then it is embedded in the printed circuit board (PCB) (PCB).The multilayer resistive layer is formed by different alloys or oxide respectively and constitutes a circuit in parallel, uses the resistive element of being convenient to produce different resistance values; But use technologies such as evaporation or sputter, manufacturing cost is higher, and the technology difficulty of etching resistive layer is higher.
Summary of the invention
A purpose of the present invention is to provide a kind of resistive element and manufacture method thereof with low-resistance value and low resistance temperature coefficient.
Another object of the present invention is to provide a kind of resistive element and manufacture method thereof, and the setting by last oxide layer can strengthen the adhesive force of resistive layer and protective layer and can increase the stability of resistive element under high temperature.
Another purpose of the present invention is to provide a kind of manufacture method of resistive element, reaches to simplify fabrication schedule and promote technology stability.
For reaching an above-mentioned purpose or whole purpose, the resistive element of one embodiment of the invention is applicable to the electric current in sensing one circuit and comprises a supporting body, to be arranged at resistive layer, on the supporting body and to be electrically connected on the electrode unit of resistive layer, directly to be arranged at the protective layer of the last oxide layer of last oxide layer on the part resistive layer and cover part; Resistive layer comprises copper alloy, and goes up the oxide that oxide layer comprises copper alloy; The contact area and the adhesive force that can strengthen between protective layer and resistive layer by being provided with of last oxide layer, and can increase the stability of resistive element under high temperature; And the resistivity and the temperature coefficient of resistance of last oxide layer that comprises the oxide of copper alloy all approach copper alloy, so can not influence the characteristic of resistive element significantly.The manufacture method of the resistive element of one embodiment of the invention; comprise a combined plate body that comprises the multilayer that the resistive element of copper alloy and a substrate form is provided, remove the part resistive element with form a plurality of resistive layers disconnected from each other, carry out oxidation processes with form a matsurface that comprises the copper alloy oxide on the resistive layer of part, form protective layer on matsurface and the cutting combined plate body simplify fabrication schedule and promote technology stability to form resistive element, to use to reach.
Description of drawings
Fig. 1 is the generalized section of the resistive element of one embodiment of the invention.
Fig. 2 is the generalized section of the resistive element of another embodiment of the present invention.
Fig. 3 A to Fig. 3 J is the manufacturing process schematic diagram of the resistive element of one embodiment of the invention.
Drawing reference numeral:
201 combined plate bodies
202 combination bar bodies
203 combination blocks
250 sheet metals
Film on 261
262 times films
263 substrates
280 resistor discs
282 times oxide layers
300 resistive elements
300 ' resistive element
31,31 ' supporting body
310 substrates
311 upper surfaces
312 lower surfaces
313 sides
Adhesion layer on 314
315 times adhesion layers
Oxide layer on 320
321 first oxide layers
322 second oxide layers
323 the 3rd oxide layers
330 electrode units
331,332 top electrodes
333,334 bottom electrodes
335,336 termination electrodes
337,338 outer electrodes
340 resistive layers
341 first surfaces
342 second surfaces
343 sides
350 protective layers
360 times oxide layers
371 the first metal layers
372 second metal levels
Embodiment
About aforementioned and other technology contents, characteristics and effect of the present invention, in the following detailed description that cooperates with reference to graphic embodiment, can clearly present.The direction term of being mentioned in following examples, for example: upper and lower, left and right, front or rear etc. only are the directions with reference to annexed drawings.Therefore, the direction term of use is to be used for illustrating not to be to be used for limiting the present invention.
As shown in Figure 1, the resistive element 300 of one embodiment of the invention is applicable to the electric current in the sensing circuit, it has low-resistance value (resistance value) and low resistance temperature coefficient (temperature coefficientof resistance, TCR), preferably, its resistance value approximately less than 10m Ω and temperature coefficient of resistance approximately less than 100 * 10
-6/ K (ppm/K).
Be used in resistive layer 340 and top electrode 331﹠amp; The last oxide layer 320 of tool matsurface directly is set on 332, can strengthens protective layer 350 and resistive layer 340 and top electrode 331﹠amp; Therefore 332 contact area and adhesive force can promote the reliability and the durable reliability of resistive element 300.Moreover; the last oxide layer 320 that resistive layer 340 is formed after oxidation processes; it can be used as a passivation layer; when protective layer 350 is molten into liquid resin because of high temperature; passivation layer can block that amine is to the influence of resistive layer 340 in the liquid resin, and using to increase the stability of resistive element 300 under high temperature.And, because the resistivity and the temperature coefficient of resistance of copper alloy oxide all approach copper alloy, therefore, the last oxide layer 320 that adopts copper alloy to constitute resistive layer 340 and directly second surface 342 oxidations of the part of resistive layer 340 are formed in the present embodiment, approach to constitute resistive layer 340 so that comprise the resistivity and the temperature coefficient of resistance of the last oxide layer 320 of copper alloy oxide, and can not influence the characteristic of resistive element 300 by copper alloy.Therefore, resistive element 300 of the present invention the stability under can promoting reliability and high temperature, also can be kept current sensor required low-resistance value and the low resistance temperature coefficient of resistive element.What deserves to be mentioned is, known employing copper is as the resistive layer material, because of the temperature coefficient of resistance of the very high so cupric oxide that copper forms after oxidation processes of the temperature coefficient of resistance of copper itself and copper than copper alloy itself and the oxide community that forms next greatly, so be difficult for reaching the required low TCR of current sensor (promptly less than 100 * 10
-6/ K).
In addition, carry out characteristic test with the resistive element 300 of Fig. 1 of the present invention, the copper alloy (for example: CuNi44 and CuMn12Ni) that wherein adopts table 1 is for resistive layer 340 and adopt the oxidation processes of brown technology to form oxide layer 320.Test result such as table 2 and table 3, table 2 is that the monel of resistive layer 340 employing CuNi44 and the resistance value of prepared resistive element 300 are the test result of about 5m Ω and about 10m Ω, and table 3 is that the manganin of resistive layer 340 employing CuMn12Ni and the resistance value of prepared resistive element 300 are the test result of about 1m Ω.Can be learnt that by table 2 when resistance value was 10m Ω, mean temperature coefficient of resistance was 24.52ppm/K, when resistance value was 5m Ω, mean temperature coefficient of resistance was 6.6ppm/K; Can learn that by table 3 when resistance value was 1m Ω, mean temperature coefficient of resistance was 103ppm/K; Therefore, the resistive element 300 of susceptible of proof present embodiment can reach low-resistance value (less than 10m Ω) and low resistance temperature coefficient (less than 100 * 10
-6/ K).It should be noted that, the measurement temperature of resistivity in the table 1 (electrical resistivity) is 20 ℃, the measurement temperature of temperature coefficient of resistance is 20 ℃ to 105 ℃, and the measurement temperature of thermo-electromotive force (thermoelectromotive force, thermo EMF) is 20 ℃.
Table 1
Table 2
Table 3
As shown in Figure 2, the generalized section of the resistive element 300 ' of another embodiment of the present invention.For convenience of description, have the element components identical with resistive element 300 in the following resistive element 300 ', give the components identical symbol.And present embodiment and the foregoing description difference are that resistive element 300 ' also comprises oxide layer 360 and heat-sink unit; And supporting body 31 ' comprises that also adhesion layer 314 reaches adhesion layer 315 down.
Wherein, the matsurface that following oxide layer 360 forms for the first surface 341 that utilizes wet method to pay etching technique oxidation resistive layer 340, the material of following oxide layer 360 comprises the oxide of resistive layer 340 at least, promptly comprises the oxide of copper alloy.The effect of following oxide layer 360 and effect are identical with last oxide layer 320, so do not give unnecessary details at this.
Supporting body 31 ' comprise a substrate 310, that is constituted by the aluminium oxide material be arranged at substrate 310 upper surfaces 311 one on adhesion layer 314 and be arranged at the following adhesion layer 315 of substrate 310 lower surfaces 312, last adhesion layer 314 is arranged between resistive layer 340 and the substrate 310, and last adhesion layer 314 utilizes the following oxide layer 360 with matsurface to combine closely with resistive layer 340, and resistive layer 340 can more firmly be engaged with supporting body 31 '.Last adhesion layer 314 and down adhesion layer 315 can be a film, required adhesive force when providing substrate 310 to engage with other elements, the material that last adhesion layer 314 reaches following adhesion layer 315 can be epoxy resin.Preferably, last adhesion layer 314 and down adhesion layer 315 be the heat radiation film, with heat conduction that resistive layer 340 is produced to resistive element 300 '.The material of heat radiation film can be and contains aluminium nitride (AlN) and alundum (Al (Al
2O
3) epoxy resin of powder.
Heat-sink unit is formed at down adhesion layer 315 and bottom electrode 333﹠amp respectively; Between 334.In the present embodiment, heat-sink unit comprises a first metal layer 371 and second metal level 372 that is engaged in down the lower surface of adhesion layer 315, and the material of the first metal layer 371 and second metal level is a copper.
By last adhesion layer 314 and the setting of adhesion layer 315 down, make resistive element 300 ' can utilize process for pressing to make, compared to resistive element 300, can save manufacturing cost; And the setting of oxide layer 360 down can make the contact area of each interlayer in the resistive element 300 ' and adhesive force promote, so resistive element 300 ' has better reliability degree and durable reliability; And adopt the heat radiation film to reach adhesion layer 315 down as last adhesion layer 314, and add the setting of heat-sink unit, the heat that resistive layer 340 is produced is easy to derive, so the excellent in heat dissipation effect of the resistive element 300 ' of present embodiment.
Shown in Fig. 3 A to Fig. 3 J, relevant one embodiment of the invention resistive element 300﹠amp; 300 ' manufacture method comprise (A) provide by combined plate body, (B) who comprises the resistive element of copper alloy and the formed multilayer of a substrate remove the part resistive element with form a plurality of resistive layer, (C) disconnected from each other form a plurality of conductive projections on these a little resistive layers, (D) carry out oxidation processes with form a matsurface that comprises the copper alloy oxide on the resistive layer of part, (E) forms protective layer and cut combined plate body to form resistive element on matsurface and (F).Below describe each step in detail.Fig. 3 A to Fig. 3 F, Fig. 3 H and Fig. 3 J are the schematic side view according to resistive element manufacture process one step of one embodiment of the invention, and Fig. 3 G and Fig. 3 I are the schematic top plan view according to resistive element manufacture process one step of one embodiment of the invention.
(A) provide step, shown in Fig. 3 A and Fig. 3 B by the combined plate body of resistive element that comprises copper alloy and the formed multilayer of substrate.At first, as shown in Figure 3A, provide one by resistor disc 280 that copper alloy constituted as resistive element, the first surface to resistor disc 280 carries out oxidation processes again, makes the first surface of resistor disc 280 form oxide layer 282.Oxidation processes can utilize wet method to pay etching technique, soon first surface is dipped in the etching liquid or sprays etching liquid in first surface, utilize etching liquid and resistor disc to carry out microetch reaction and organic substance attachment reaction, be black and have cupprous copper alloy oxide and the formation color is brown and have cupric copper alloy oxide or form color, so that the first surface of resistor disc 280 forms the matsurface of the oxide with copper alloy.Adopt the technology of the CO-BRA BOND of Yi Xi specialization (thigh) company (Rockwood Electrochemical ASIA Ltd) in the present embodiment.Etching liquid can comprise oxidant and additive, and additive can comprise shape modification agent (topography modifier) and promoter (promoter).Adopting sulfuric acid and hydrogen peroxide in the present embodiment is oxidant, is brown and has cupric copper alloy oxide so the copper alloy oxide is a color.Come again, shown in Fig. 3 B, with film on resistor disc 280 and one 261, a substrate 263, once film 262 and a sheet metal 250 carry out pressing, form the combined plate body 201 of a multilayer.In detail, place sheet metal 250, down film 262, substrate 263 and go up film 261 in regular turn, again with the following oxide layer 282 of resistor disc 280 to be arranged on the film 261 towards last film 261, carry out pressing again.Sheet metal 250 can be a copper sheet or resistor disc.In addition, except that adopting the pressing mode to form the combined plate body, also can utilize thin-film technique to form combined plate body, in detail, utilization evaporation or sputtering technology formation comprise the resistive film (figure does not show) of copper alloy on substrate, and resistive film is used substrate and resistive film and formed combined plate body as resistive element.
(B) remove the part resistive element to form the step of a plurality of resistive layers disconnected from each other, shown in Fig. 3 C.Utilize photoetching technique to remove part resistive element (resistor disc 280 or resistive film) and sheet metal 250 after covering one deck photoresist earlier, so that resistive element and sheet metal 250 are separated out a plurality of zones disconnected from each other, and form the resistive layer 340 and the metal level 371,372 of each resistive element.In detail, each zone is a resistive element and comprises a resistive layer 340, the first metal layer 371 and second metal level 372.
(C) form the step of a plurality of conductive projections on resistive layer, shown in Fig. 3 D.Utilize photoetching and electroplating technology to form a conductive projection disconnected from each other with as top electrode 331﹠amp in the second surface 342 of resistive layer 340; 332, utilize photoetching and electroplating technology on the first metal layer 371 and second metal level 372, to form conductive projection with as bottom electrode 333﹠amp again; 334.
(D) carry out oxidation processes to form the step of a matsurface that comprises the copper alloy oxide on the resistive layer of part, shown in Fig. 3 E.This step is to utilize etching liquid that the upper surface of combined plate body 201 is carried out oxidation processes, makes the second surface and the top electrode 331﹠amp of resistive layer 340; 332 upper surface forms one and has the last oxide layer 320 of matsurface; Also can before forming a plurality of conductive projections, carry out oxidation processes to the surface of resistive layer 340 earlier, make matsurface only be formed on the resistive layer 340.In detail, oxidation processes can utilize wet method to pay etching technique, promptly earlier combined plate body 201 is placed pre-immersion trough that an etching liquid is housed so that the upper surface of combined plate body 201 contacts an etching liquid or an etching liquid is sprayed on the upper surface of combined plate body 201, make etching liquid be adsorbed in the upper surface of combined plate body 201; Utilize etching liquid and resistive layer and top electrode to carry out etching reaction and organic substance attachment reaction again, be black and have cupprous copper alloy oxide and the formation color is brown and have cupric copper alloy oxide or form color; In process, organic substance can be attached to the upper surface of combined plate body 201 randomly, and the part that is covered by organic substance can not be etched, and can not be etched and there is the part that organic substance covers.Etching liquid can comprise oxidant and additive, and additive can comprise shape modification agent (topography modifier) and promoter (promoter).In the present embodiment, employed etching liquid comprises oxidant (being sulfuric acid and hydrogen peroxide) and additive, therefore forms to have cupric copper alloy oxide.It should be noted that, because etching liquid is to the etch rate difference of nickel, manganese and copper in the copper alloy, the etch rate that is nickel is slow than copper, the etch rate of manganese is fast than copper, so the copper alloy of different proportion can obtain the surface of different roughness after wet method is paid erosion, therefore, can use nickel, manganese and the copper formation copper alloy of different proportion to make resistive element according to the demand of product specification with required temperature coefficient of resistance and resistance value.The roughness of last oxide layer 320 tack of protective layer 350 that heals when big is better; but programing power index (the ProcessCapability index of bigger its resistive element of the roughness of last oxide layer 320; CP and/or CPK) can be bigger; sometimes need the time of a specified duration to carry out laser trimming; the man-hour of making can be longer; therefore, the center line average roughness Ra that goes up the surface of oxide layer 320 of the present invention is made as approximately
Between be preferable.
In addition, also can increase roughness through shape modification agent in the etching liquid.And promoter more can comprise the promoter of adhesion promoter (adhesion promoter) and coverage promoter (coverage promoter), adhesion promoter can promote the reagentia of shape modification agent and copper, and can be in forming water-fast organic membrane (in an embodiment, can comprise oxide layer 320) on the surface of resistive layer 340, coverage promoter can promote the uniformity of organic membrane.
Before (E) forms the step of protective layer on matsurface, need utilize laser reconditioning resistive layer 340 to adjust the resistance value of resistive element 300.And (E) form the step of protective layer on matsurface, shown in Fig. 3 F, be to utilize mode of printing on last oxide layer 320, to form protective layer 350.
(F) the cutting combined plate body is to form the step of resistive element, shown in Fig. 3 G.At first, combined plate body 201 is cut at least one combination bar body 202 (as Fig. 3 I) along the A-A direction; Utilize the mode of sputter again, form termination electrode 335﹠amp respectively in the side of combination bar body 202; 336.Shown in Fig. 3 I, will make up bar body 202 and cut at least one combination block 203 (as Fig. 3 J), and utilize the barrel plating mode along the B-B direction, form outer electrode 337﹠amp in the side of combination block 203; 338, use and finish resistive element 300﹠amp of the present invention; 300 '.
Because the present invention utilizes the pressing mode that resistor disc is combined with substrate, and pay etching technique with wet method and form oxide layer, and do not need in the manufacture process under 960 ℃～980 ℃ nitrogen environment, to carry out sintering, can remove the expensive and highly difficult technology of use from compared to known technology, simplify fabrication schedule and cost and reach, and can promote the stability of technology.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; the technical staff who has common knowledge in the technical field under any; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when the scope that look appended claim defines.Arbitrary embodiment of the present invention in addition or claim scope must not reached the disclosed whole purposes of the present invention or advantage or characteristics.In addition, summary part and title only are the usefulness that is used for assisting the patent document search, are not to be used for limiting interest field of the present invention.
Claims (22)
1, a kind of resistive element is characterized in that, described resistive element comprises:
One supporting body;
One resistive layer is arranged on the described supporting body and comprises copper alloy;
One electrode unit is electrically connected on described resistive layer;
Oxide layer on one comprise lip-deep one the 3rd oxide layer of the part that directly is arranged at described resistive layer, and described the 3rd oxide layer comprises the oxide of described resistive layer; And
One protective layer, the described oxide layer that goes up of cover part at least.
2, resistive element as claimed in claim 1 is characterized in that, described copper alloy is for being the monel of principal component with nickel and copper.
3, resistive element as claimed in claim 2 is characterized in that, described monel comprises the nickel of the copper of about 55wt%, about 44wt% and the iron of about 1wt%.
4, resistive element as claimed in claim 1 is characterized in that, described copper alloy is for being the manganin of principal component with manganese and copper.
5, resistive element as claimed in claim 4 is characterized in that, described manganin comprises the manganese of the copper of about 86wt%, about 12wt% and the nickel of about 2wt%.
6, resistive element as claimed in claim 1, it is characterized in that, described electrode unit comprises a pair of top electrode that is separated from each other, the resistive layer of described a pair of top electrode cover part, the described oxide layer that goes up comprises also and directly is arranged at lip-deep one first oxide layer and one second oxide layer of described a pair of top electrode away from described resistive layer that described first oxide layer and described second oxide layer comprise the oxide of described top electrode.
7, resistive element as claimed in claim 6 is characterized in that, described upward oxide layer is to utilize wet method to pay the matsurface that etching technique forms.
8, resistive element as claimed in claim 1 is characterized in that, described upward oxide layer is to utilize wet method to pay the matsurface that etching technique forms.
9, resistive element as claimed in claim 8 is characterized in that, the center line average roughness of described matsurface be approximately between
Extremely
Between.
10, resistive element as claimed in claim 1 is characterized in that, described go up thickness of oxide layer between about 40 μ m to about 100 μ m, the thickness of described resistive layer is between about 0.2mm about 0.6mm extremely.
11, resistive element as claimed in claim 1, it is characterized in that, described supporting body comprises the following adhesion layer that last adhesion layer and that a substrate, with a upper surface and a lower surface is arranged at the described upper surface of described substrate is arranged at the described lower surface of described substrate, and the described adhesion layer of going up is arranged between described resistive layer and the described substrate.
As the resistive element of claim 11, it is characterized in that 12, described upward adhesion layer and described adhesion layer down are a heat radiation film, and described resistive element comprises that also one is engaged in the described metal level of adhesion layer down.
13, resistive element as claimed in claim 1 is characterized in that, described resistive element is applicable to the electric current in sensing one circuit, and its resistance value less than about 10m Ω and temperature coefficient of resistance less than about 100 * 10
-6/ K.
14, a kind of manufacture method of resistive element is characterized in that, the step of described method comprises:
Provide by one and comprise the resistive element of copper alloy and the combined plate body of the formed multilayer of a substrate;
Remove the described resistive element of part to form a plurality of resistive layers disconnected from each other;
Carry out oxidation processes and comprise the matsurface of copper alloy oxide on the described resistive layer of part to form one;
Form a protective layer on described matsurface; And
Cut described combined plate body, to form described resistive element.
15, as the manufacture method of the resistive element of claim 14, it is characterized in that, also comprise and adhesion layer is set on one between described resistive element and described substrate, described resistive element is a resistor disc, and described resistor disc, described upward adhesion layer and described substrate utilize the pressing mode to form described combined plate body.
16, as the manufacture method of the resistive element of claim 15, it is characterized in that oxidation processes is carried out to form a matsurface in a surface that provides step by the combined plate body of described resistive element and the formed described multilayer of described substrate also to be included in described resistor disc.
17, as the manufacture method of the resistive element of claim 14, it is characterized in that, utilize a thin-film technique form a resistive film on described substrate to form described combined plate body, described resistive film forms described resistive element.
18, as the manufacture method of the resistive element of claim 14, it is characterized in that described oxidation processes is to select for use a wet method to pay etching technique.
19, as the manufacture method of the resistive element of claim 18, it is characterized in that, it is to adopt an etching liquid that described wet method is paid etching technique, and described etching liquid comprises an oxidant and an additive, and described additive comprises a shape modification agent, an adhesion promoter and a coverage promoter.
20, as the manufacture method of the resistive element of claim 14, it is characterized in that, remove the described resistive element of part with the step that forms a plurality of resistive layers disconnected from each other after, also comprise forming a plurality of conductive projections on the part surface of described a plurality of resistive layers.
21, as the manufacture method of the resistive element of claim 20, it is characterized in that, carry out oxidation processes and also comprise and carry out oxidation processes to form a matsurface on described conductive projection to form the step of a matsurface on the described resistive layer of part.
As the manufacture method of the resistive element of claim 14, it is characterized in that 22, described copper alloy is for being the manganin of principal component with manganese and copper, or for being the monel of principal component with nickel and copper.
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|---|---|---|---|
| CN200810212796A CN101673602B (en) | 2008-09-12 | 2008-09-12 | Resistive element and manufacturing method thereof |
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|---|---|---|---|
| CN200810212796A CN101673602B (en) | 2008-09-12 | 2008-09-12 | Resistive element and manufacturing method thereof |
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| CN101673602A true CN101673602A (en) | 2010-03-17 |
| CN101673602B CN101673602B (en) | 2012-08-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356167A (en) * | 2015-07-17 | 2017-01-25 | 乾坤科技股份有限公司 | Microresistor |
| CN106782949A (en) * | 2016-12-08 | 2017-05-31 | 苏州长风航空电子有限公司 | A kind of wire wrap nickel current sensing element and preparation method |
| CN107148657A (en) * | 2014-10-31 | 2017-09-08 | 兴亚株式会社 | Patch resistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5037670A (en) * | 1989-11-01 | 1991-08-06 | Cts Corporation | Method of manufacturing a low sheet resistance article |
| US5907274A (en) * | 1996-09-11 | 1999-05-25 | Matsushita Electric Industrial Co., Ltd. | Chip resistor |
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2008
- 2008-09-12 CN CN200810212796A patent/CN101673602B/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107148657A (en) * | 2014-10-31 | 2017-09-08 | 兴亚株式会社 | Patch resistor |
| CN107148657B (en) * | 2014-10-31 | 2019-01-01 | 兴亚株式会社 | Patch resistor |
| CN106356167A (en) * | 2015-07-17 | 2017-01-25 | 乾坤科技股份有限公司 | Microresistor |
| CN106782949A (en) * | 2016-12-08 | 2017-05-31 | 苏州长风航空电子有限公司 | A kind of wire wrap nickel current sensing element and preparation method |
| CN106782949B (en) * | 2016-12-08 | 2018-08-24 | 苏州长风航空电子有限公司 | A kind of wire wrap nickel current sensing element and production method |
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| Publication number | Publication date |
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| CN101673602B (en) | 2012-08-29 |
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