CN103103606A - Method for preparing 8 inch low-oxygen monocrystal - Google Patents
Method for preparing 8 inch low-oxygen monocrystal Download PDFInfo
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- CN103103606A CN103103606A CN2013100585186A CN201310058518A CN103103606A CN 103103606 A CN103103606 A CN 103103606A CN 2013100585186 A CN2013100585186 A CN 2013100585186A CN 201310058518 A CN201310058518 A CN 201310058518A CN 103103606 A CN103103606 A CN 103103606A
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Abstract
A method for preparing 8 inch low-oxygen monocrystal. The method is characterized in that a CUSP magnetic field is applied around a furnace for drawing the 8 inch monocrystal; the intensity of the magnetic field is altered by changing the height of the magnetic field and adjusting current level of the magnetic field, so as to inhibit convection current inside the melt, thereby reducing the oxygen content in the monocrystal. The invention has the following beneficial effects: the CUSP magnetic field is applied around the furnace to inhibit thermal convection current in the melt, companied by regulation of argon flow level; the reaction speed in a crucible is controlled; and crystal transformation and crucible rotation forced convection control the oxygen, so as to obviously reduce the oxygen content. The invention has the advantages of low energy consumption, high yield, simple process and low cost.
Description
Technical field
The invention belongs to the silicon single crystal preparing technical field, especially relate to a kind of method for preparing 8 cun hypoxemia monocrystalline
Background technology
Preparation hypoxemia monocrystalline reduces the defective that bring out because oxygen is high monocrystalline inside, can improve later stage finished product rate and monocrystalline performance reliability, and the factor that affect oxygen in the melt of finding at present has: 1. argon flow amount is big or small; 2. thermal convection in melt; 3. with the speed of response of crucible; 4. crystalline substance turns with crucible and turns forced convection.Ordinary method of the prior art is change condition 1,3,4, and reaches the purpose of falling oxygen.
Summary of the invention
The problem to be solved in the present invention is that the method for 8 cun hypoxemia monocrystalline of preparation that a kind of energy consumption is low, productive rate is high, technique is simple, cost is low is provided.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of method for preparing 8 cun hypoxemia monocrystalline, it is characterized in that: apply CUSP magnetic field around the body of heater that draws 8 cun monocrystalline, by the described field supply size of the height, the adjusting that change described magnetic field, change described magneticstrength, suppress the convection current of melt inside, thereby reduce the oxygen level in monocrystalline.
According to the expectation oxygen level value of monocrystalline, regulate height and the field supply size in described magnetic field.
The height in described magnetic field is 1040-1100mm.
Described field supply is 190-440A.
When the expectation oxygen level is 10.5-12E+17atm/cm^3, need not to apply magnetic field;
When the expectation oxygen level was 8-10E+17atm/cm^3, the magnetic field height was 1100mm, and field supply is 190-240A;
When the expectation oxygen level was 7-8E+17atm/cm^3, the magnetic field height was 1060-1080mm, and field supply is 240-340A;
When the expectation oxygen level was 6-7E+17atm/cm^3, the magnetic field height was 1040-1060mm, and field supply is 340-440A;
The monocrystalline charging capacity is 90-200Kg; Passing into argon flow amount is 70-150slpm; Furnace pressure is set to 10-17Torr; The pulling rate of monocrystalline is 0.5-1mm/min.
Advantage and positively effect that the present invention has are: apply CUSP magnetic field to around body of heater, major control condition 2 suppresses the thermal convection in melt, and in conjunction with 1. argon flow amount sizes; 3. with the speed of response of crucible; 4. crystalline substance turns and turns forced convection with crucible and control oxygen, and oxygen level is obviously reduced, and has advantages of that energy consumption is low, productive rate is high, technique is simple, cost is low.
Embodiment
Embodiment 1:
Apply CUSP magnetic field around the body of heater that draws 8 cun monocrystalline, by the described field supply size of the height, the adjusting that change described magnetic field, change described magneticstrength, suppress the convection current of melt inside, thereby reduce the oxygen level in monocrystalline.
Originally execute that in example, charging capacity is 100Kg; Passing into argon flow amount is 120slpm; Furnace pressure is set to 15Torr; The pulling rate of monocrystalline is 1mm/min.
The expectation oxygen level value of monocrystalline is 9-10E+17atm/cm^3, and regulating the magnetic field height according to expected value is 1100mm, and the setting field supply is 190A.
Embodiment 2:
Apply CUSP magnetic field around the body of heater that draws 8 cun monocrystalline, by the described field supply size of the height, the adjusting that change described magnetic field, change described magneticstrength, suppress the convection current of melt inside, thereby reduce the oxygen level in monocrystalline.
Originally execute that in example, charging capacity is 100Kg; Passing into argon flow amount is 120slpm; Furnace pressure is set to 15Torr; The pulling rate of monocrystalline is 1mm/min.
The expectation oxygen level value of monocrystalline is 8-9E+17atm/cm^3, and regulating the magnetic field height according to expected value is 1100mm, and the setting field supply is 240A.
Embodiment 3:
Apply CUSP magnetic field around the body of heater that draws 8 cun monocrystalline, by the described field supply size of the height, the adjusting that change described magnetic field, change described magneticstrength, suppress the convection current of melt inside, thereby reduce the oxygen level in monocrystalline.
Originally execute that in example, charging capacity is 100Kg; Passing into argon flow amount is 120slpm; Furnace pressure is set to 15Torr; The pulling rate of monocrystalline is 1mm/min.
The expectation oxygen level value of monocrystalline is 7-8E+17atm/cm^3, and regulating the magnetic field height according to expected value is 1060mm, and the setting field supply is 340A.
Experimental result:
Choose the monocrystalline of three groups of different expectation oxygen level values and test, by applying CUSP magnetic field, draw 8 cun monocrystalline.The monocrystalline that obtains is carried out determination of oxygen content, choose 4 measuring points, choose 1 measuring point at the monocrystalline afterbody at the monocrystalline head respectively, the result that obtains is as shown in the table, in table oxygen level unit be E+17atm/cm^3:
As seen from the above table, by applying CUSP magnetic field, the actual oxygen content value that monocrystalline records is the value of meeting the expectation all, and even below expected value, and actual oxygen content mean value is starkly lower than common process.
Above three embodiment of the present invention are had been described in detail, but described content is only preferred embodiment of the present invention, can not be considered to be used to limiting practical range of the present invention.All equalizations of doing according to the present patent application scope change and improve etc., within all should still belonging to patent covering scope of the present invention.
Claims (6)
1. method for preparing 8 cun hypoxemia monocrystalline, it is characterized in that: apply CUSP magnetic field around the body of heater that draws 8 cun monocrystalline, by the described field supply size of the height, the adjusting that change described magnetic field, change described magneticstrength, suppress the convection current of melt inside, thereby reduce the oxygen level in monocrystalline.
2. method according to claim 1, is characterized in that: according to the expectation oxygen level value of monocrystalline, regulate height and the field supply size in described magnetic field.
3. method according to claim 1, it is characterized in that: the height in described magnetic field is 1040-1100mm.
4. method according to claim 1, it is characterized in that: described field supply is 190-440A.
5. method according to claim 1 is characterized in that:
When the expectation oxygen level is 10.5-12E+17atm/cm^3, need not to apply magnetic field;
When the expectation oxygen level was 8-10E+17atm/cm^3, the magnetic field height was 1100mm, and field supply is 190-240A;
When the expectation oxygen level was 7-8E+17atm/cm^3, the magnetic field height was 1060-1080mm, and field supply is 240-340A;
When the expectation oxygen level was 6-7E+17atm/cm^3, the magnetic field height was 1040-1060mm, and field supply is 340-440A.
6. method according to claim 1, it is characterized in that: the charging capacity of monocrystalline is 90-200Kg; Passing into argon flow amount is 70-150slpm; Furnace pressure is set to 10-17Torr; The pulling rate of monocrystalline is 0.5-1mm/min.
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| CN2013100585186A CN103103606A (en) | 2013-02-25 | 2013-02-25 | Method for preparing 8 inch low-oxygen monocrystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441941A (en) * | 2018-02-13 | 2018-08-24 | 中山大学 | In-situ investigation method, control method and the control system of the intrinsic convection current fluctuation of melt |
| CN114855284A (en) * | 2022-04-06 | 2022-08-05 | 上海新昇半导体科技有限公司 | Method for growing monocrystalline silicon |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101240444A (en) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | Method and device for manufacturing silica semiconductor wafer |
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2013
- 2013-02-25 CN CN2013100585186A patent/CN103103606A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101240444A (en) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | Method and device for manufacturing silica semiconductor wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441941A (en) * | 2018-02-13 | 2018-08-24 | 中山大学 | In-situ investigation method, control method and the control system of the intrinsic convection current fluctuation of melt |
| CN114855284A (en) * | 2022-04-06 | 2022-08-05 | 上海新昇半导体科技有限公司 | Method for growing monocrystalline silicon |
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Application publication date: 20130515 |