CN103094459A - Green light-emitting diode (LED) and fluorescent powder used for LED - Google Patents
Green light-emitting diode (LED) and fluorescent powder used for LED Download PDFInfo
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- CN103094459A CN103094459A CN2012104375549A CN201210437554A CN103094459A CN 103094459 A CN103094459 A CN 103094459A CN 2012104375549 A CN2012104375549 A CN 2012104375549A CN 201210437554 A CN201210437554 A CN 201210437554A CN 103094459 A CN103094459 A CN 103094459A
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- fluorescent material
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- 239000000843 powder Substances 0.000 title abstract description 11
- 230000005855 radiation Effects 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 25
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052788 barium Inorganic materials 0.000 claims abstract description 11
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- 239000012190 activator Substances 0.000 claims abstract description 7
- 229920003023 plastic Polymers 0.000 claims abstract description 6
- 239000004033 plastic Substances 0.000 claims abstract description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000003595 spectral effect Effects 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims description 13
- 229910052693 Europium Inorganic materials 0.000 claims description 6
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 3
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 5
- GFKJCVBFQRKZCJ-UHFFFAOYSA-N oxygen(2-);yttrium(3+);trisulfide Chemical compound [O-2].[O-2].[O-2].[S-2].[S-2].[S-2].[Y+3].[Y+3].[Y+3].[Y+3] GFKJCVBFQRKZCJ-UHFFFAOYSA-N 0.000 description 2
- 239000013047 polymeric layer Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
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- Luminescent Compositions (AREA)
Abstract
The invention relates to preparation of a green light-emitting diode (LED) and fluorescent powder used for the LED. The LED is composed of radiation crystal made of InGaN, a conical reflective mirror and the fluorescent powder, wherein the crystal radiates in a purple spectral area, the fluorescent powder mainly takes orthosilicate, barium and strontium as basic materials, and takes Eu2+ and Ce3+ as activators, the reflective mirror is made of white ceramic or white plastic, the inclined angle is 60+5/-10 gon, the height is 2-3mm, a polymer layer containing the fluorescent power is attached to the surface of the reflective mirror, and the thickness of the reflective mirror is 100+/-50 micrometers. Illumination efficiency of the efficient green LED can be 801m/W and exceeds a traditional LED, and the green LED can be used for signal display and high-power illumination products.
Description
Technical field
The present invention relates to optoelectronics, particularly LED technology, reach the high-power green LED that is used for the signal display and lighting.The invention still further relates to a kind of fluorescent material for green LED.
Background technology
Has λ with the heterogeneous green LED of becoming matrix of InGaN InGaN p-n
maxThe radiation wavelength of=520-530nm (for example model y-118 И, y-342 И, station address: www.optelcenter.ru).The characteristics of this light-emitting diode are, its outside quantum radiation output η
E=7-13%, luminous efficiency η
vWhen=30-50lm/W(is 350mA at direct current).But when such light-emitting diode was used multiple times, such luminous efficiency was inadequate, and the efficient that therefore improves green LED is extremely urgent.
Document (S.Nakamura.The blue Lazer Diode.Springer Verl. at relevant white light emitting diode, Berlin, 1997) in mention, it contains blue ray radiation crystal and inorganic fluorescent powder take yttrium-aluminium-garnet as matrix take InGaN InGaN p-n junction heterostructure as matrix, fluorescent material is distributed in transparent polymer to form luminescent layer, and this luminescent layer is close to the radiation crystal.But this light-emitting diode exists the low deficiency that waits of efficient.
About white light emitting diode (Kim J.K., Luo H., Schubert E.F.et al.-Jpn.J.Appl.Phys-Express Letter 44, L 649.2005 years) mention in document, in this light-emitting diode, fluorescent material is away from crystal, and the distance between them surpasses the lateral dimension of crystal.Introduce speculum in the structure of light-emitting diode, in this case, just can reduce the fluorescent material radiation and project possibility on the semiconductor crystal with antiradar reflectivity, make the efficient of light-emitting diode increase 20-30%.
In green LED, the greatest irradiation wavelength X of the infrared radiation of the p-n junction heterostructure in GaAs:Si
maxBetween 870 to 950nm, this infrared radiation can be transformed into Green-Emission under the help of the anti-Stokes fluorescence powder take the yttrium oxysulfide as matrix.The composition of yttrium oxysulfide is: Y
2O
2S:Yb, Er(R.M Potter/US pat.35292000 comes from 1972.09.15).But very low (the luminous efficiency η of this type of light-emitting diodes tube efficiency
v≈ 0.1-0.2lm/W).This is that the radiation transfer characteristic of anti-Stokes fluorescence powder causes.
Summary of the invention
In order to obtain the effective technology solution about green LED, the present invention relates to the following aspects.
The present invention relates to a kind of green LED, described light-emitting diode is comprised of the radiation crystal, taper reflection and the fluorescent material that come from InGaN InGaN, the radiation crystal is in purple spectrum area radiation, and fluorescent material is mainly to be matrix by orthosilicate, barium, strontium, Eu
2+And Ce
3+Be activator, speculum is made by whiteware or white plastic, and its inclination angle is 60
+ 5 -10Centigrade is highly 2-3mm, and scribbling a layer thickness on the speculum wall is the polymeric layer that contains fluorescent material of 100 ± 50 μ m.
Green LED of the present invention is positioned at wave band 395-405nm with the heterogeneous purple radiation crystal wavelength of becoming matrix of InGaN InGaNp-n.
Optimal proportion for the fluorescent material of green LED of the present invention main synthetic ingredient Ba, Sr, Eu and С e is: 45%:50%:4.5%:0.5% to 55%:42%:2.9%:0.1%, the Green-Emission wavelength maximum λ that obtains
maxIn the scope of 524-540nm.
The refraction coefficient of the polymer of green LED of the present invention is n 〉=1.5.
The taper reflection of green LED of the present invention is to be made by whiteware or white plastic.
The radiation angle of the packaged lens that green LED of the present invention uses is 2 θ
0.5, the variable domain of wave band is 20-120nm.
Especially, the present invention silicate fluorescent powder required for protection is that (chemometric equation is as Ba take orthosilicate barium-strontium
1.22Sr
0.68Eu
0.08Ce
0.02* SiO
4To Ba
0.88Sr
1.05Eu
0.06Ce
0.01* SiO
4) be matrix, with Eu
2+And Ce
3+Be activator.If change the proportion relation of synthetic composition Ba, Sr and Eu, just can change the radiation wavelength of fluorescent material, its wavelength can change and cover green spectral regions between 508-540nm.
The excitation wavelength of fluorescent material is between wavestrip 385-450nm, therefore for excitated fluorescent powder, the crystal of ultraviolet radiation maximum wavelength between 395-405nm need to be arranged, this crystal is with the heterogeneous matrix of becoming of InGaN InGaN p-n, ultraviolet radiation is positioned at the edge of visible range, can not exert an influence to the luminous characteristics of light-emitting diode in green spectral radiation areas.
In order to reduce the efficient of radiation loss and lifting light-emitting diode, in the taper reflection (seeing Fig. 1 for details) that the crystal disposed about is made by whiteware or plastics, inclined angle alpha=60
+ 5 -10Centigrade is coated with in mirror surface the polymer that one deck contains silicate fluorescent powder, and thickness is 100 ± 50 μ m.The height of reflector is 2-3mm.
Description of drawings
Fig. 1 is green LED of the present invention.
The main element symbol description:
1-radiation crystal;
2-internal reflection zone;
The d-inside diameter;
The D-outer dia;
The h-height;
α-inclination angle;
3-contains the polymeric layer of fluorescent material;
The 4-transparent polymer;
The 5-main body.
Embodiment
In a specific embodiment of the present invention, silicate fluorescent powder is as matrix, with Eu take orthosilicate, barium, strontium
2+And Ce
3+Ion is selected the best proportioning of Ba, Sr and Eu simultaneously as activator, and fluorescent material is had λ
maxThe ultraviolet radiation of=395-405nm excites, and obtains high efficiency λ
maxThe green glow of=520-540nm.
Adopt the cone-type mirror of being made by white material in light-emitting diode of the present invention, cover the polymer that one deck comprises fluorescent material on speculum.Effectively utilize the ultraviolet radiation of crystal, this radiation can change the Green-Emission of fluorescent material into.The radiation of this fluorescent material can not project on the radiation crystal in experiment, the yet not radiation of absorbing crystal.Fluorescent material on the white surface meeting reflex reflector of taper reflection is the green glow of radiation down.
Because the Green-Emission that the fluorescent material top layer is downward mainly projects on the inclined surface of speculum, and in fact from its surface reflection, so project radiation on crystal, can not surpass 5%.Therefore the fluorescent material in crystal is also few to the absorption of Green-Emission, and the ultraviolet radiation of crystal does not absorb the downward radiation of fluorescent material top layer and fluorescent material, converts the Green-Emission of fluorescent material on speculum to.
Just can obtain high efficiency green LED according to the method described above, its luminous efficiency surpasses 80-90lm/W.
For above-mentioned and other purpose of the present invention, feature, advantage can be become apparent, hereinafter describe the present invention in detail in connection with accompanying drawing and preferred embodiment.
Embodiment
In an embodiment of the present invention, the radiation crystal that contains ultraviolet radiation of employing is produced by SemiLEDs company, model is SL-V-U40AC, it is of a size of 1.07 х 1.07mm, and radiation wavelength is 395-405nm, its radiant power 350-370lm/W under the 350mA electric current.
The cone-type mirror of using is to be made by whiteware, and it is of a size of:
d=1.9mm，D=8mm，α=56°C，h=2mm
The transparent silica gel as polymer of using is that ShinEtsu company produces, and model is LPS-5544, refraction coefficient n=1.53-1.54.The orthosilicate fluorescent material that uses with orthosilicate, barium, strontium as matrix, Eu
2+And Ce
3+Be activator.
Above-mentioned light-emitting diode type is y-130 Ф-И.
The major parameter of resulting light-emitting diode is as follows:
Its radiation spectrum has a large-area Green-Emission band, and maximum wavelength is λ
max=525nm, half-wave is wide is 72nm, also has a little ultraviolet radiation band, the greatest irradiation wavelength is λ
max=401nm, half-wave is wide is 14nm.
The chromaticity coordinates composition is as follows:
X=0.3-0.32，Y=0.58-0.61。The luminous flux of Green-Emission is 80-90lm under the electric current of 350mA.Luminous efficiency η=70-80lm/W.These data are compared with the green LED of traditional use InGaN InGaN structure crystal and are exceeded a lot, and traditional luminous efficiency is lower than 50lm/W.
Axial intensity is 25-30cd, radiation angle 2 θ
0.5≈ 120 centigrades
What the light-emitting diode of numbering Y-345 type structure adopted is hemispheric lens
When radiation angle is 2 θ
0.5During ≈ 80 centigrade, its light intensity is 35-40cd, when radiation angle is 2 θ
0.5During ≈ 20-30 ° of centigrade, its light intensity is 130-140cd.
Light-emitting diode with such fluorescent material of the present invention is made is all exceeding much than traditional green LED aspect luminous efficiency and other each luminous parameters.
Although the present invention with preferred embodiment openly as above; yet it is not to limit the present invention; those skilled in the art are without prejudice to spirit of the present invention and without departing from the present invention; can do a little change and retouching; therefore, protection scope of the present invention is with being as the criterion that claims were limited.
Claims (8)
1. green LED, described light-emitting diode is comprised of the radiation crystal, taper reflection and the fluorescent material that come from InGaN InGaN, it is characterized in that crystal in purple spectrum area radiation, fluorescent material is mainly to be matrix by orthosilicate, barium, strontium, Eu
2+And Ce
3+Be activator, speculum is to be made by whiteware or white plastic, and its inclination angle is 60
+ 5 -10° centigrade is highly 2-3mm, scribbles the transparent polymer that a layer thickness is 100 ± 50 μ m on the speculum wall, contains fluorescent material in polymer.
2. green LED according to claim 1, is characterized in that for being positioned at wave band 395-405nm with the heterogeneous wavelength of becoming the purple radiation crystal of matrix of InGaN InGaN p-n.
3. green LED according to claim 1, is characterized in that the optimal proportion of fluorescent material main component Ba, Sr, Eu and Ce is: 45%:50%:4.5%:0.5% to 55%:42%:2.9%:0.1%, the Green-Emission wavelength X that obtains
maxBetween 524-540nm.
4. green LED according to claim 1 is characterized in that the refraction coefficient of the polymer that adopts is n 〉=1.5.
5. green LED according to claim 1, is characterized in that taper reflection is to be made by whiteware or white plastic.
6. green LED according to claim 1, is characterized in that, the radiation angle of the packaged lens of use is 2 θ
0.5, the variable domain of wave band is 20-120nm.
7. a fluorescent material that is used for the described green LED of claim 1-6 any one, is characterized in that, fluorescent material is that its chemometric equation is: Ba take orthosilicate barium strontium as matrix
1.22Sr
0.68Eu
0.08Ce
0.02* SiO
4To Ba
0.88Sr
1.05Eu
0.06Ce
0.01* SiO
4, with Eu
2+And Ce
3+Be activator, the radiation wavelength of fluorescent material changed between 508-540nm and cover green spectral regions by the proportion relation that changes synthetic composition Ba, Sr and Eu.
8. fluorescent material according to claim 7, it is characterized in that, also excite this fluorescent material with the ultraviolet radiation of greatest irradiation wavelength between 395-405nm by the best proportioning of selecting Ba, Sr and Eu element, obtain high efficiency greatest irradiation wavelength at the green glow of 520-540nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104375549A CN103094459A (en) | 2012-11-06 | 2012-11-06 | Green light-emitting diode (LED) and fluorescent powder used for LED |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104375549A CN103094459A (en) | 2012-11-06 | 2012-11-06 | Green light-emitting diode (LED) and fluorescent powder used for LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103094459A true CN103094459A (en) | 2013-05-08 |
Family
ID=48206804
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|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065693A (en) * | 2018-08-08 | 2018-12-21 | 厦门多彩光电子科技有限公司 | A kind of LED encapsulation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271950A (en) * | 2008-04-18 | 2008-09-24 | 罗维鸿 | Blue-green luminous semiconductor and fluorescent powder thereof |
| CN102214647A (en) * | 2010-04-12 | 2011-10-12 | 惠州科锐光电有限公司 | Surface mount device thin package |
| KR101196207B1 (en) * | 2010-11-05 | 2012-11-05 | 조성매 | Green light-emitting diode by phosphor |
-
2012
- 2012-11-06 CN CN2012104375549A patent/CN103094459A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271950A (en) * | 2008-04-18 | 2008-09-24 | 罗维鸿 | Blue-green luminous semiconductor and fluorescent powder thereof |
| CN102214647A (en) * | 2010-04-12 | 2011-10-12 | 惠州科锐光电有限公司 | Surface mount device thin package |
| KR101196207B1 (en) * | 2010-11-05 | 2012-11-05 | 조성매 | Green light-emitting diode by phosphor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065693A (en) * | 2018-08-08 | 2018-12-21 | 厦门多彩光电子科技有限公司 | A kind of LED encapsulation method |
| CN109065693B (en) * | 2018-08-08 | 2020-09-11 | 厦门多彩光电子科技有限公司 | LED packaging method |
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Application publication date: 20130508 |