CN103094333A - 一种大功率晶闸管 - Google Patents

一种大功率晶闸管 Download PDF

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CN103094333A
CN103094333A CN2011103455378A CN201110345537A CN103094333A CN 103094333 A CN103094333 A CN 103094333A CN 2011103455378 A CN2011103455378 A CN 2011103455378A CN 201110345537 A CN201110345537 A CN 201110345537A CN 103094333 A CN103094333 A CN 103094333A
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gate pole
same parents
silicon wafer
thyristor
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CN103094333B (zh
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王勇
张海鹏
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HANGZHOU HANAN SEMICONDUCTOR CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
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Abstract

本发明公开了一种大功率晶闸管，该大功率晶闸管包括硅片，所述硅片上设有单元胞门极，所述单元胞门极包括中心门极和放大门极，所述中心门极位于放大门极正中心位置，所述硅片上至少设有七个单元胞门极，任意三个相邻的单元胞门极都呈正三角形分布在硅片上。在大功率晶闸管的硅片上设置多个小尺寸的单元胞门极，使得该大功率的硅片表面形成多单元胞结构门极，通过在硅片表面建立多个寄生电阻、电容小的工作区域，实现大尺寸晶闸管保持与小尺寸晶闸管同样的工作性能，达到开启速度快、电流密度分布均匀，通态平均电流密度高、通态压降低、通态功耗小的优点。因此，利用该技术可以在尺寸更大的大功率晶闸管上实现性能优良的开关作业操作。

Description

一种大功率晶闸管
技术领域
本发明涉及功率开关器件，尤其涉及一种大功率晶闸管。
背景技术
晶闸管中设有硅片，硅片为圆形。在硅片上设有单元胞结构的门极即在硅片上只设有一个中心门极和围绕该中心门极的放大门极。放大门极多采用蘑菇状多指结构或者渐开线多指结构，以此来覆盖在硅片上。但是，随着硅片直径不断随着功率增大而增大，放大门极长度不可避免地增大，其寄生分布电阻和电容随之迅速增加。由于上述原因，单元胞结构门极的尺寸增大，受到中心门极和放大门极的寄生电阻、电容增大的影响，使得晶闸管开启过程充电时间常数增加，引起开启时间延长，开启速度变慢，开启过程的di/dt耐量降低，开启均匀性变差；同时，导致通态电流密度分布均匀性变差，有效通态平均电流密度降低，通态压降和通态功耗增大。
发明内容
本发明要解决的技术问题是提供一种满足大功率工作需要的门极结构设计合理且寄生电阻、电容小的大功率晶闸管。
为解决上述技术问题，本发明采用如下技术方案：该大功率晶闸管包括硅片，所述硅片上设有单元胞门极，所述单元胞门极包括中心门极和放大门极，所述中心门极位于放大门极正中心位置，所述硅片上至少设有七个单元胞门极，任意三个相邻的单元胞门极都呈正三角形分布在硅片上。
作为本发明的优选，所述单元胞门极的放大门极包括三个呈箭头状分指，所述分指间隔一百二十度围绕中心门极分布且三个分指之间相连。
本发明采用上述技术方案：在大功率晶闸管的硅片上设置多个小尺寸的单元胞门极，使得该大功率的硅片表面形成多单元胞结构门极，通过在硅片表面建立多个寄生电阻、电容小的工作区域，实现大尺寸晶闸管保持与小尺寸晶闸管同样的工作性能，达到开启速度快、电流密度分布均匀，通态平均电流密度高、通态压降低、通态功耗小的优点。因此，利用该技术可以在尺寸更大的大功率晶闸管上实现性能优良的开关作业操作。
附图说明
下面结合附图和具体实施方式对本发明作进一步说明。
图1为本发明大功率晶闸管第一种实施例的硅片结构示意图；
图2为本发明大功率晶闸管第二种实施例的硅片结构示意图；
图3为为本发明大功率晶闸管第三种实施例的硅片结构示意图。
具体实施方式
本发明第一种实施例的大功率晶闸管上设有硅片，该硅片上设有七个结构相同的单元胞门极。如图1所示，每个单元胞门极都由一个中心门极1和一个放大门极2组成。放大门极2包括三个呈箭头状分指，每个分指都设有一个一百二十度弯折的折边部3，在该折边部3的中间即两边交界处向中心门极1所在方向设有连接部4。分指围绕中心门极1呈间隔一百二度环形分布，三个分指的连接部4在中心门极1周围交织相连，进而分指的连接部4处于以中心门极1为圆心的半径方向上，临近的分指的折边部3之间分离。
由于放大门极2的分指环形分布后形成一个正六边形结构，因此使得每个单元胞门极都呈正六边形。七个单元胞门极中任意相邻的三个单元胞门极都呈正三角形分布在硅片上，所以这个七个单元胞门极有六个呈正六边形分布，还有一个位于这个六个单元胞门极的正中间位置。七个单元胞门呈蜂窝状极有效地分布在硅片上，同时，靠近硅片边缘且相邻的单元胞门极的放大门极2的分指之间形成的一百二十度夹角，由此硅片面积得到充分利用。
该大功率晶闸管的硅片上的多单元胞门极结构，通过缩小工作区域，保留了小尺寸的单元胞门极结构的寄生电阻、电容小的优点，同时通过多个单元胞门极技术满足大功率工作的要求，从而解决了现有技术中单元胞门极尺寸与寄生电阻、电容之间的矛盾。多单元胞门极结使放大门极2的分指的有效长度减少，相应的寄生电阻、电容减少。这样，大功率晶闸管开启过程充电时间常数减小，缩短了开启时间，从而提高了开启速度；还提高了开启过程的di/dt耐量，改善开启均匀性；另一方面改善通态电流密度分布均匀性，提高有效通态平均电流密度，降低通态压降和通态功耗。
本发明第二种实施例，该实施例与第一种实施例的不同之处在于，硅片上的多元胞门极由十九个单元胞门极组成，如图2所示，与第一种实施例中的单元胞门极一样，任意三个相邻的单元胞门极呈正三角形分布，整体呈蜂窝状。
本发明第三种实施例，该实施例与第一种实施例的不同之处在于，硅片上的多元胞门极由四十三个单元胞门极组成，如3所示，与第一种实施例中的单元胞门极一样，任意三个相邻的单元胞门极呈正三角形分布，整体呈蜂窝状。

Claims (2)

1.一种大功率晶闸管，该大功率晶闸管包括硅片，所述硅片上设有单元胞门极，所述单元胞门极包括中心门极(1)和放大门极(2)，所述中心门极(1)位于放大门极(2)正中心位置，其特征在于：所述硅片上至少设有七个单元胞门极，任意三个相邻的单元胞门极都呈正三角形分布在硅片上。
2.根据权利要求1所述晶闸管，其特征在于：所述单元胞门极的放大门极(2)包括三个呈箭头状分指，所述分指间隔一百二十度围绕中心门极(1)分布且三个分指之间相连。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409491A (zh) * 2013-08-26 2015-03-11 湖北台基半导体股份有限公司 高压快开通晶闸管及其制造方法
CN106328499A (zh) * 2016-08-25 2017-01-11 西安派瑞功率半导体变流技术股份有限公司 掩膜版高精度遮挡半导体芯片门极图形真空镀薄膜加工工艺

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CN87208366U (zh) * 1987-05-26 1988-08-03 清华大学 一种高频晶闸管
JPS6464361A (en) * 1987-09-04 1989-03-10 Fuji Electric Co Ltd Semiconductor device
CN202332860U (zh) * 2011-11-03 2012-07-11 杭州汉安半导体有限公司 一种大功率晶闸管

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2263091A1 (de) * 1971-12-27 1973-07-12 Fujitsu Ltd Feldeffekt-halbleitervorrichtung
CN87208366U (zh) * 1987-05-26 1988-08-03 清华大学 一种高频晶闸管
JPS6464361A (en) * 1987-09-04 1989-03-10 Fuji Electric Co Ltd Semiconductor device
CN202332860U (zh) * 2011-11-03 2012-07-11 杭州汉安半导体有限公司 一种大功率晶闸管

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409491A (zh) * 2013-08-26 2015-03-11 湖北台基半导体股份有限公司 高压快开通晶闸管及其制造方法
CN104409491B (zh) * 2013-08-26 2017-10-27 湖北台基半导体股份有限公司 高压快开通晶闸管及其制造方法
CN106328499A (zh) * 2016-08-25 2017-01-11 西安派瑞功率半导体变流技术股份有限公司 掩膜版高精度遮挡半导体芯片门极图形真空镀薄膜加工工艺
CN106328499B (zh) * 2016-08-25 2018-11-20 西安派瑞功率半导体变流技术股份有限公司 掩膜版高精度遮挡半导体芯片门极图形真空镀薄膜加工工艺

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