CN103091974A - Photolithography mask structure - Google Patents
Photolithography mask structure Download PDFInfo
- Publication number
- CN103091974A CN103091974A CN201310062258XA CN201310062258A CN103091974A CN 103091974 A CN103091974 A CN 103091974A CN 201310062258X A CN201310062258X A CN 201310062258XA CN 201310062258 A CN201310062258 A CN 201310062258A CN 103091974 A CN103091974 A CN 103091974A
- Authority
- CN
- China
- Prior art keywords
- plectrum
- pattern
- area
- reticle
- photolithography mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention provides a photolithography mask structure. The photolithography mask structure comprises an outer frame area and a pattern area, wherein the outer frame area is arranged at the periphery of the pattern area so as to surround the pattern area; the pattern area is used for arranging an integrated circuit pattern; one or more shifting sheets are arranged at each of the four edges of the outer frame area; each shifting sheet can slide in the extending direction of the edge at which the shifting sheet is arranged of the outer frame area; and each shifting sheet is provided with a plurality of alignment mark patterns in the extending direction of the edge at which the shifting sheet is arranged of the outer frame area. At least one part in the plurality of alignment mark patterns of each shifting sheet has different patterns. The alignment mark patterns required by different photolithographic machines can be switched at same positions on the same photolithography mask by using the novel structure design of alignment marks of the photolithography mask, so that the mark clash problem caused when the photolithographic machines from different manufacturers share the photolithography mask in a matching process is solved.
Description
Technical field
The present invention relates to field of semiconductor manufacture; Specifically, the present invention relates to semiconductor lithography process; More particularly, the present invention relates to a kind of reticle structure.
Background technology
Semiconductor lithography process is the important process step during large scale integrated circuit is produced, and optical lithography remains mainstream technology at present, and reticle is one of core technology of semiconductor lithography process as transfer techniques.
Semiconductor applications has many litho machine production firms, and brand is different, and is of a great variety, and different in the design of reticle alignment mark, the whole industry does not have unified standard yet, and this is just using, bringing certain problem on the management reticle for wafer factory.And wafer factory can use different litho machine kinds for different technological requirements, and essential requirement of the mutual coupling of litho machine used the same standard edition, is a large problem so use different alignment marks on standard edition.
Fig. 1 schematically shows the reticle structure according to prior art.
As shown in Figure 1, the reticle structure comprises housing zone 10 and area of the pattern 20.Housing zone is used for placing bar code 11 or alignment mark 12,13,14, some auxiliary patterns such as 15, and area of the pattern 20 is integrated circuit patterns.As mentioned above, traditional reticle is placed different reticle alignment marks due to the difference of litho machine manufacturer at housing regional 10, and the figure of alignment mark is different, the position conflict of alignment mark, and litho machine also just can not use the same reticle.
Summary of the invention
Technical matters to be solved by this invention is to solve the defects that exists in prior art, by adopting the new structure design of reticle alignment mark, realization same position on the same reticle can switch the needed alignment mark of different litho machines, shares the mark collision problem of version thereby solve the different manufacturers litho machine when coupling.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of reticle structure, it comprises: housing zone and area of the pattern;
Wherein, thus described housing zone is arranged in described area of the pattern periphery surrounds described area of the pattern;
Wherein, described area of the pattern is used for arranging integrated circuit patterns;
And one or more plectrum has been arranged respectively on four limits in described housing zone, and described plectrum can slide on the bearing of trend on the limit in it is arranged described housing zone;
And, placed a plurality of alignment key patterns on the bearing of trend on the limit in the described housing zone of arranging along it in each plectrum.
Preferably, at least a portion in a plurality of alignment key patterns of each plectrum has different pattern.
Preferably, a plurality of alignment key patterns of each plectrum are different.
Preferably, also placed bar code in described housing zone.
Preferably, the plectrum on the relative edge in described housing zone is arranged symmetrically with.
Thus, the present invention is by adopting the new structure design of reticle alignment mark, realization same position on the same reticle can switch the needed alignment key pattern of different litho machines, shares the mark collision problem of reticle thereby solve the different manufacturers litho machine when coupling.
Description of drawings
By reference to the accompanying drawings, and by with reference to following detailed description, will more easily to the present invention, more complete understanding be arranged and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows the reticle structure according to prior art.
Fig. 2 schematically shows reticle structure according to the preferred embodiment of the invention.
The concrete structure of the slippage plectrum that the reticle structure according to the preferred embodiment of the invention of schematically showing Fig. 3 adopts.
Need to prove, accompanying drawing is used for explanation the present invention, and unrestricted the present invention.Note, the accompanying drawing of expression structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 2 schematically shows reticle structure according to the preferred embodiment of the invention.
Specifically, as shown in Figure 2, the reticle structure comprises according to the preferred embodiment of the invention: housing zone 10 and area of the pattern 20.
Wherein, thus described housing zone 10 is arranged in described area of the pattern 20 peripheries surrounds described area of the pattern 20.
Wherein, described area of the pattern 20 is used for arranging integrated circuit patterns.
One or more plectrum has been arranged respectively on four limits in described housing zone 10.And described plectrum can slide on the bearing of trend on the limit in it is arranged described housing zone 10.Wherein, appropriate ways arbitrarily during the concrete structure that plectrum slides on housing regional edge separately and mode can adopt prior art for purpose succinct and that give top priority to what is the most important, does not repeat them here thus.
For example, as shown in Figure 2, four limits of 10 have been arranged two the first plectrums 31, second plectrum 32, two the 3rd plectrums 34 and the 4th plectrum 33 successively in described housing zone.
And two the first plectrums 31 and two the 3rd plectrums 34 can slide in horizontal direction shown in Figure 2, and the second plectrum 32 and the 4th plectrum 33 can slide at vertical direction shown in Figure 2.
Preferably, also placed bar code 11 in described housing zone 10.
The concrete structure of the slippage plectrum that the reticle structure according to the preferred embodiment of the invention of schematically showing Fig. 3 adopts.
More particularly, as shown in Figure 3, a plurality of alignment key patterns 41 have been placed on the bearing of trend on the limit in the described housing zone 10 of arranging along it in each plectrum.
And at least a portion in a plurality of alignment key patterns 41 of each plectrum has different pattern.Preferably, a plurality of alignment key patterns 41 of each plectrum are different.
Preferably, in specific embodiment, the plectrum on the relative edge in described housing zone 10 is arranged symmetrically with, that is, the quantity of the plectrum on the relative edge in described housing zone 10 is identical, and structure is identical, and corresponding at the position on limit separately.
Like this, the above embodiment of the present invention is carried out the structure redesign to reticle housing zone, in former marked locations, adopts the mode of slippage plectrum, increases a plectrum structure, the required alignment key pattern of formation variety classes litho machine on plectrum; When this piece reticle need to be used on different litho machines, plectrum is moved, switch to the required mark of this litho machine, can use on dissimilar litho machine thereby solve the same reticle, realize that the reticle in the litho machine coupling is held mutually.
Thus, above preferred embodiment of the present invention is by adopting the new structure design of reticle alignment mark, realization same position on the same reticle can switch the needed alignment key pattern of different litho machines, shares the mark collision problem of reticle thereby solve the different manufacturers litho machine when coupling.
In addition, need to prove, unless stated otherwise or point out, otherwise the term in instructions " first ", " second ", " the 3rd " etc. describe each assembly of only being used for distinguishing instructions, element, step etc., rather than are used for logical relation between each assembly of expression, element, step or ordinal relation etc.
Be understandable that, although the present invention with the preferred embodiment disclosure as above, yet above-described embodiment is not to limit the present invention.For any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (5)
1. a reticle structure, is characterized in that comprising: housing zone and area of the pattern;
Wherein, thus described housing zone is arranged in described area of the pattern periphery surrounds described area of the pattern;
Wherein, described area of the pattern is used for arranging integrated circuit patterns;
And one or more plectrum has been arranged respectively on four limits in described housing zone, and described plectrum can slide on the bearing of trend on the limit in it is arranged described housing zone;
And, placed a plurality of alignment key patterns on the bearing of trend on the limit in the described housing zone of arranging along it in each plectrum.
2. reticle structure according to claim 1, is characterized in that, at least a portion in a plurality of alignment key patterns of each plectrum has different pattern.
3. reticle structure according to claim 1, is characterized in that, a plurality of alignment key patterns of each plectrum are different.
One of according to claim 1 to 3 described reticle structure, it is characterized in that, described housing has also been placed bar code in the zone.
One of according to claim 1 to 3 described reticle structure, it is characterized in that, the plectrum on the relative edge in described housing zone is arranged symmetrically with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310062258.XA CN103091974B (en) | 2013-02-27 | 2013-02-27 | Photolithography mask structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310062258.XA CN103091974B (en) | 2013-02-27 | 2013-02-27 | Photolithography mask structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103091974A true CN103091974A (en) | 2013-05-08 |
| CN103091974B CN103091974B (en) | 2014-08-13 |
Family
ID=48204722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310062258.XA Active CN103091974B (en) | 2013-02-27 | 2013-02-27 | Photolithography mask structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103091974B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015000263A1 (en) * | 2013-07-04 | 2015-01-08 | 京东方科技集团股份有限公司 | Exposure device and exposure method thereof |
| CN104865789A (en) * | 2015-06-08 | 2015-08-26 | 中国科学院微电子研究所 | Mask plate and photoetching method |
| CN112652566A (en) * | 2020-12-30 | 2021-04-13 | 合肥晶合集成电路股份有限公司 | Method for preparing integrated circuit |
| CN115079510A (en) * | 2022-08-23 | 2022-09-20 | 深圳芯能半导体技术有限公司 | Photomask and photomask design method |
| TWI832479B (en) * | 2022-10-07 | 2024-02-11 | 普思半導體股份有限公司 | Alignment detection pattern, overlay error correction method, and alignment correction system for semiconductor manufacturing process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05142745A (en) * | 1991-01-07 | 1993-06-11 | Hitachi Ltd | Phase shift mask and manufacture of mask |
| WO2005013006A1 (en) * | 2003-08-04 | 2005-02-10 | Micronic Laser Systems Ab | Psm alignment method and device |
| CN102645855A (en) * | 2012-04-24 | 2012-08-22 | 上海宏力半导体制造有限公司 | Enhanced global alignment (EGA) mark and photolithograph pattern |
| CN102809895A (en) * | 2012-07-23 | 2012-12-05 | 上海宏力半导体制造有限公司 | Photoetching layout, photoresist graph and method for measuring exposure error of photoresist graph |
| US20130032956A1 (en) * | 2011-08-02 | 2013-02-07 | Canon Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
-
2013
- 2013-02-27 CN CN201310062258.XA patent/CN103091974B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05142745A (en) * | 1991-01-07 | 1993-06-11 | Hitachi Ltd | Phase shift mask and manufacture of mask |
| WO2005013006A1 (en) * | 2003-08-04 | 2005-02-10 | Micronic Laser Systems Ab | Psm alignment method and device |
| US20130032956A1 (en) * | 2011-08-02 | 2013-02-07 | Canon Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
| CN102645855A (en) * | 2012-04-24 | 2012-08-22 | 上海宏力半导体制造有限公司 | Enhanced global alignment (EGA) mark and photolithograph pattern |
| CN102809895A (en) * | 2012-07-23 | 2012-12-05 | 上海宏力半导体制造有限公司 | Photoetching layout, photoresist graph and method for measuring exposure error of photoresist graph |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015000263A1 (en) * | 2013-07-04 | 2015-01-08 | 京东方科技集团股份有限公司 | Exposure device and exposure method thereof |
| US9523920B2 (en) | 2013-07-04 | 2016-12-20 | Boe Technology Group Co., Ltd. | Exposure device and exposure method |
| CN104865789A (en) * | 2015-06-08 | 2015-08-26 | 中国科学院微电子研究所 | Mask plate and photoetching method |
| CN112652566A (en) * | 2020-12-30 | 2021-04-13 | 合肥晶合集成电路股份有限公司 | Method for preparing integrated circuit |
| CN112652566B (en) * | 2020-12-30 | 2023-03-07 | 合肥晶合集成电路股份有限公司 | Method for preparing integrated circuit |
| CN115079510A (en) * | 2022-08-23 | 2022-09-20 | 深圳芯能半导体技术有限公司 | Photomask and photomask design method |
| CN115079510B (en) * | 2022-08-23 | 2023-01-03 | 深圳芯能半导体技术有限公司 | Photomask and photomask design method |
| TWI832479B (en) * | 2022-10-07 | 2024-02-11 | 普思半導體股份有限公司 | Alignment detection pattern, overlay error correction method, and alignment correction system for semiconductor manufacturing process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103091974B (en) | 2014-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103091974B (en) | Photolithography mask structure | |
| US20130075938A1 (en) | Photolithography alignment mark, mask and semiconductor wafer containing the same mark | |
| WO2013177874A1 (en) | Alignment identifier and method using alignment identifier to manufacture workpiece in exposure process | |
| CN102722082A (en) | Mask and overlay measuring method | |
| WO2019012499A8 (en) | Method for the alignment of photolithographic masks and corresponding process for manufacturing integrated circuits in a wafer of semiconductor material | |
| CN109901359A (en) | For the alignment patterns of exposure mask, exposure mask and wafer | |
| CN103246155B (en) | Photolithography mask and exposure method thereof | |
| US10642150B2 (en) | Photomask and method for manufacturing column spacer for color filter using the same | |
| CN201897692U (en) | Masking plate with alignment marks | |
| CN101986427A (en) | Semiconductor wafer having pre-aligning pattern and method for pre-aligning the same | |
| US9054113B1 (en) | Box-in-box overlay mark | |
| CN104281010B (en) | forming method and substrate | |
| CN103376645B (en) | General mask and application thereof | |
| US8524424B2 (en) | Optical proximity correction photomask | |
| JP2015094951A (en) | Manufacturing method for color filter substrate | |
| CN104952851B (en) | Alignment mark and its alignment methods | |
| CN103869603B (en) | A kind of reticle assembly and the method for detection lithography alignment accuracy | |
| CN104714373B (en) | Method for transferring front and back patterns of silicon wafer with high precision | |
| US20100207284A1 (en) | Method for providing rotationally symmetric alignment marks for an alignment system that requires asymmetric geometric layout | |
| CN104795383A (en) | Alignment mark, alignment mark detection method and alignment mark detection device | |
| JP5662767B2 (en) | Mask for imprint lithography | |
| US20050287443A1 (en) | Methods and systems for layout and routing using alternating aperture phase shift masks | |
| CN103645601A (en) | Mask | |
| US20190317393A1 (en) | Mask and method of forming pattern | |
| CN100445869C (en) | Scribing groove structure for registration photo etching |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |