CN100445869C - Scribing groove structure for registration photo etching - Google Patents
Scribing groove structure for registration photo etching Download PDFInfo
- Publication number
- CN100445869C CN100445869C CNB200410017898XA CN200410017898A CN100445869C CN 100445869 C CN100445869 C CN 100445869C CN B200410017898X A CNB200410017898X A CN B200410017898XA CN 200410017898 A CN200410017898 A CN 200410017898A CN 100445869 C CN100445869 C CN 100445869C
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- CN
- China
- Prior art keywords
- alignment
- scribe line
- exposure station
- photoetching alignment
- scribing groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention relates to a scribing groove structure for photolithography and alignment, which is formed around an exposure point. Pattern signs of photolithography and alignment are arranged around the exposure point in a windmill shape that patterns of photolithography and alignment are orderly arranged within the space of 50 microns around the four sides of the exposure point. The widths of the photolithography patterns in the scribing groove are relatively small because of the dispersed arrangement. The scribing groove structure is used in the manufacture process of a semiconductor device, particularly in the manufacture process of installing the patterns of photolithography and alignment in a scribing groove.
Description
Technical field
The scribing sheet groove structures that is used for the photoetching alignment of road encapsulation behind the relevant a kind of semiconductor devices of the present invention, the scribing sheet groove structures that is used for the photoetching alignment of road encapsulation behind especially relevant a kind of chip that figure can be narrowed down in the 50um.
Background technology
In chip manufacturing proces, need carry out the location of chip by the photoetching alignment, therefore scribe line need be set around chip, in scribe line, place on the various technologies simultaneously or the mark that will use on the product, as photoetching alignment mark, determining film thickness PAD figures.
As shown in Figure 1, the scribe line width of the existing various products that use on volume production all is 120um, according to existing design rule, on the various technologies of in scribe line, placing or MARK such as the photoetching alignment mark that will use on the product, the width of determining film thickness PAD figures all is limited in the scope of 100um, and the scribe line of this structure is to form by the exposure of adjacent two SHOT.This structure, if scribe line is placed area of graph when having for different requirement the 50um, existing structure can not meet the demands.
Therefore, invent a kind of new scribing sheet groove structures that is used for the photoetching alignment that various pictorial symbolizations all can be limited in 50um.
Summary of the invention
For a change the defective in the prior art the objective of the invention is: a kind of new scribing sheet groove structures that is used for the photoetching alignment that various pictorial symbolizations all can be limited in 50um.
In order to realize goal of the invention of the present invention, a kind of scribing sheet groove structures that is used for the photoetching alignment of the present invention, be formed at an exposure station around, the pictorial symbolization of photoetching alignment is the windmill shape and is arranged at around the exposure station.
Owing to adopt technique scheme, the scribing sheet groove structures that is used for the photoetching alignment of the present invention can be limited in figure in the scope of 50um because pictorial symbolization disperses to be provided with.
Description of drawings
Fig. 1 is the synoptic diagram that prior art is used for the scribing sheet groove structures of photoetching alignment.
Fig. 2 is the synoptic diagram that the present invention is used for the scribing sheet groove structures of photoetching alignment.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described.
See also shown in Figure 2ly, form scribe line around each exposure station, the zone that pictorial symbolization is set is that the center is the windmill shape and distributes with the center of exposure station.The width of each scribe line area is 50um, and length is about half of exposure station zone length.Four scribe line area are arranged at the right side of exposure station.The pictorial symbolization of all photoetching alignments all is arranged in above-mentioned four scribe line area.
In sum, because scribe line area is dispersed into four zones, the pictorial symbolization of photoetching disperses to be arranged in four zones, all can be placed in the 50um scope of central area so various pictorial symbolization all can be arranged at.
Claims (4)
1, a kind of scribing sheet groove structures that is used for the photoetching alignment, be formed at an exposure station around, it is characterized in that four scribe line are the windmill shape and are arranged at around the exposure station, described scribe line length is half of exposure station zone length.
2, the scribing sheet groove structures that is used for the photoetching alignment as claimed in claim 1 is characterized in that: described windmill is meant that scribe line is arranged at the side that four limit peripheries of exposure station keep left in turn.
3, the scribing sheet groove structures that is used for the photoetching alignment as claimed in claim 1 is characterized in that: described windmill is meant that scribe line is arranged at the side that four limit peripheries of exposure station are kept right in turn.
4, as claim 2 or the 3 described scribing sheet groove structures that are used for the photoetching alignment, it is characterized in that: described windmill shape is meant that photoetching alignment figure is arranged in the space of four peripheral 50um of exposure station in turn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410017898XA CN100445869C (en) | 2004-04-23 | 2004-04-23 | Scribing groove structure for registration photo etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410017898XA CN100445869C (en) | 2004-04-23 | 2004-04-23 | Scribing groove structure for registration photo etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1690859A CN1690859A (en) | 2005-11-02 |
| CN100445869C true CN100445869C (en) | 2008-12-24 |
Family
ID=35346373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410017898XA Expired - Fee Related CN100445869C (en) | 2004-04-23 | 2004-04-23 | Scribing groove structure for registration photo etching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100445869C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101750899B (en) * | 2008-12-04 | 2011-06-22 | 上海华虹Nec电子有限公司 | Lithography layout and method for measuring lithography deformation thereof |
| CN101745993B (en) * | 2008-12-10 | 2012-04-18 | 上海华虹Nec电子有限公司 | Method for forming windmill-shaped scribing sheet groove structures |
| CN101865706B (en) * | 2009-04-16 | 2012-12-12 | 上海华虹Nec电子有限公司 | Rotation test method for windmill-shaped scribing groove |
| CN101866110B (en) * | 2009-04-16 | 2013-09-11 | 上海华虹Nec电子有限公司 | Rotation test pattern of windmill-shaped scribing groove |
| CN102540735A (en) * | 2010-12-08 | 2012-07-04 | 无锡华润上华科技有限公司 | Check method of photomask diagram position deviation |
| CN102436151B (en) * | 2011-12-22 | 2015-02-25 | 上海华虹宏力半导体制造有限公司 | Forming method of photoetching layout |
| CN102645855A (en) * | 2012-04-24 | 2012-08-22 | 上海宏力半导体制造有限公司 | Enhanced global alignment (EGA) mark and photolithograph pattern |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122473A (en) * | 1993-10-21 | 1995-05-12 | Nikon Corp | Exposure method |
| US20020080364A1 (en) * | 2000-12-27 | 2002-06-27 | Koninklijke Philips Electronics N.V. | Method of measuring overlay |
| US20030021465A1 (en) * | 2000-08-30 | 2003-01-30 | Michael Adel | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| CN1421747A (en) * | 2001-11-30 | 2003-06-04 | 联华电子股份有限公司 | Superposed mark structure and its measurement application |
| US20030223630A1 (en) * | 2002-02-15 | 2003-12-04 | Kla-Tencor Corporation | Overlay metrology and control method |
-
2004
- 2004-04-23 CN CNB200410017898XA patent/CN100445869C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122473A (en) * | 1993-10-21 | 1995-05-12 | Nikon Corp | Exposure method |
| US20030021465A1 (en) * | 2000-08-30 | 2003-01-30 | Michael Adel | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US20020080364A1 (en) * | 2000-12-27 | 2002-06-27 | Koninklijke Philips Electronics N.V. | Method of measuring overlay |
| CN1421747A (en) * | 2001-11-30 | 2003-06-04 | 联华电子股份有限公司 | Superposed mark structure and its measurement application |
| US20030223630A1 (en) * | 2002-02-15 | 2003-12-04 | Kla-Tencor Corporation | Overlay metrology and control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1690859A (en) | 2005-11-02 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| C14 | Grant of patent or utility model | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20171214 Address after: Zuchongzhi road 201203 Shanghai Pudong New Area Zhangjiang High Tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: No. 1188, Chuan Qiao Road, Pudong, Shanghai Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
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| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081224 Termination date: 20200423 |
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| CF01 | Termination of patent right due to non-payment of annual fee |