CN103091753B - Method for adjusting perpendicularity between grating line and beam current in blazed grating ion beam etching device - Google Patents
Method for adjusting perpendicularity between grating line and beam current in blazed grating ion beam etching device Download PDFInfo
- Publication number
- CN103091753B CN103091753B CN201310011786.2A CN201310011786A CN103091753B CN 103091753 B CN103091753 B CN 103091753B CN 201310011786 A CN201310011786 A CN 201310011786A CN 103091753 B CN103091753 B CN 103091753B
- Authority
- CN
- China
- Prior art keywords
- grating
- ion beam
- beam current
- etching device
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention discloses a method for adjusting perpendicularity between a grating line and a beam current in a blazed grating ion beam etching device and belongs to the technical field of spectra. The method for adjusting the perpendicularity between the grating line and the beam current in the blazed grating ion beam etching device solves the problems that an existing method for adjusting the perpendicularity between the grating line and the beam current is low in precision of perpendicularity and errors can occur. The method comprises the steps of building the ion beam etching device, preparing two flat plates with each flat plate provided with two direct-cross lines and a central round holes, installing a laser device, a reflecting mirror and the flat plates in the ion beam etching device, enabling the laser beams emitted by the laser device to pass through the round holes of the flat plates and enter into the reflecting mirror, light reflected by the reflecting mirror enter to the surface of a grating and forms zero level diffraction light or negative one level diffraction light, enabling the negative one level diffraction light to enter back into the round holes in the flat plates, and finally the adjusting of the perpendicularity between the grating line and the beam current is achieved. The method for adjusting the perpendicularity between the grating line and the beam current in the blazed grating ion beam etching device is capable of adjusting the perpendicularity between the grating line and the beam current fast and accurately and has great significance for manufacturing high-quality plane blazed holographic gratings.
Description
Technical field
The present invention relates to spectral technique field, the plane Production of blazed holographic grating be specifically related to makes the method adjusting grid line and ion beam current verticality in the ion beam etching device used.
Background technology
Ion beam etching device is a kind of conventional plane Production of blazed holographic grating producing device, ion beam current is with perpendicular to photoresist grid line direction, substrate surface is incident to photoresist grating substrate is angled, suprabasil sinusoidal pattern photoresist grating flute profile etching is transferred in substrate, form triangular groove shape Production of blazed holographic grating, its blazing angle equals the incident angle of line.Its great advantage is: ion beam current is perpendicular to grid line direction, and therefore, as long as the angle of adjustment substrate and line, i.e. incident angle, can make the Production of blazed holographic grating of different blazing angle.
But the accurate adjustment of this device is comparatively difficult in practical operation, the degree of accuracy of photoresist grating grid line and ion beam current verticality is difficult to ensure.The etching principle of plane Production of blazed holographic grating is, it is θ that wish makes blazing angle, screen periods is the plane Production of blazed holographic grating of d, screen periods need be provided to be d, and dutycycle is 1:1, is highly the sinusoidal pattern photoresist mask of h=0.7326dtan θ, make ion beam current perpendicular to photoresist grid line direction, be incident to substrate surface with photoresist grating substrate is into θ angle, by certain etching time, forming blazing angle is
plane Production of blazed holographic grating.If ion beam current and photoresist grid line direction out of plumb, namely ion beam current is at grating substrate surface projection and photoresist grid line vertical line δ at an angle, then the blazing angle of the plane Production of blazed holographic grating formed
, only have when δ=0 as seen, the blazing angle of acquisition is just identical with design load.Namely, in plane Production of blazed holographic grating etching device, must ensure that the blazing angle of the blazed grating that ion beam current is produced with photoresist grating grid line exact vertical guarantee is identical with design load, otherwise just can produce blazing angle error, ion beam current grating substrate surface projection and photoresist grid line vertical line angle δ larger, the error of blazing angle is larger.
At present, the method adjusting verticality mainly relies on grating substrate end face and ensures by locating surface by sample stage gulde edge, ion gun housing.Because the machining precision of ion gun housing, sample stage gulde edge is not high, in addition grating substrate cannot ensure in manufacturing process that end face is vertical with grid line and have larger a part of substrate to be circular-base, so its verticality precision is lower, need to set up a kind of method of new adjustment ion beam current and photoresist grid line direction verticality.
Summary of the invention
It is lower and there is the problem of error that the present invention is that the method solving existing adjustment ion beam and grating line direction verticality exists verticality precision, provides a kind of method adjusting grid line and line verticality in blazed grating ion beam etching device.
The method of grid line and line verticality in adjustment blazed grating ion beam etching device, the method is realized by following steps:
Step one, ion gun produce ion beam current through the outgoing of ion gun aperture plate, and the exit direction of described ion beam current is perpendicular to ion gun aperture plate plane;
Step 2, light beam of light source are incident to catoptron through the center hole of flat board, and the light beam through catoptron reflection is incident to grating surface and forms 0 order diffraction light and-1 order diffraction light; It is interior and vertical with grating grid that 0 order diffraction light is incident to dull and stereotyped center hole; Described catoptron is fixed on the ion gun aperture plate surface described in step one, and the reflecting surface of catoptron is parallel with ion gun aperture plate surface;
Step 3, adjustment grating,-1 order diffraction light described in step 2 is made to be incident to dull and stereotyped center hole,-1 order diffraction light being incident to dull and stereotyped center hole is vertical with grating grid, the plane that described-1 order diffraction light is formed is vertical with the reflecting surface of catoptron, finally realizes ion beam current direction vertical with grating grid direction.
Principle of work of the present invention: the verticality that method of the present invention utilizes optical means to adjust grating grid and ion beam current can reach very high precision.Ion beam current 7 be ion gun 6 produce plasma through ion gun aperture plate 5 outgoing, its beam direction is perpendicular to ion gun aperture plate 5; Plane mirror 4 sticks on ion gun aperture plate, and its reflecting surface is parallel with ion gun aperture plate 5 surface, and namely ion beam current 7 is perpendicular to catoptron 4; Laser beam 3 is incident on catoptron 4, and reflected light back forms-1 order diffraction light 11 to grating 9 surface and gets back in the outgoing circular hole 13 of laser beam 3, and laser beam 3 is vertical with grating 9 grid line direction with the plane that-1 order diffraction light 11 is formed; Meanwhile, this plane is vertical with the reflecting surface of plane mirror 4, and therefore ion beam current 7 direction is vertical with grating 9 grid line direction.
Beneficial effect of the present invention: the method that the present invention proposes can adjust the verticality of photoresist grid line and ion beam current in plane Production of blazed holographic grating ion beam etching device fast and accurately, has direct important value to producing high-quality plane Production of blazed holographic grating.
Accompanying drawing explanation
Fig. 1 is the device schematic diagram in the method for grid line and line verticality in adjustment blazed grating ion beam etching device of the present invention;
Fig. 2 is the schematic diagram of the method middle plateform of grid line and line verticality in described adjustment blazed grating ion beam etching device;
Fig. 3 is laser beam and the optical grating diffraction light schematic diagram of laser instrument in grating grid and ion beam current out of plumb situation in the method for grid line and line verticality in described adjustment blazed grating ion beam etching device;
Fig. 4 is laser beam and the optical grating diffraction light schematic diagram of laser instrument under grating grid and ion beam current vertical case in the method for grid line and line verticality in adjustment blazed grating ion beam etching device of the present invention.
Embodiment
Embodiment one, composition graphs 1 to Fig. 4 illustrate present embodiment, the method for grid line and line verticality in adjustment blazed grating ion beam etching device, the method detailed process be:
The ion beam current that step one, ion gun 6 produce is by aperture plate 5 outgoing, its direction is perpendicular to aperture plate plane, vertical with grating 9 grid line, into θ angle with its surface, be the blazing angle of institute's etched plane Production of blazed holographic grating, the adjustment at θ angle can be realized by adjusting five dimension sample stages 8, the plane Production of blazed holographic grating of different blazing angle can be obtained.
Step 2, the laser beam 3 that laser instrument 1 sends incides catoptron 4 by the center hole 13 of dull and stereotyped 2, and the light reflected through catoptron 4 is incident to grating 9 surface formation 0 order diffraction light 10 and-1 order diffraction light 11; If the photoresist grid line on grating 9 and ion beam current 7 out of plumb, namely grid line vertical line becomes δ angle with ion beam current, and as shown in Figure 3, then-1 order diffraction light 11 will be irradiated on dull and stereotyped 2 and form hot spot 15, and the position of hot spot 15 is relevant with δ angle and θ angle;
Step 3, by the rotation adjustable δ angle of five dimension sample stages 8, by the pitching adjustable θ angle of five dimension sample stages 8, makes-1 order diffraction light 11 incidence return in the center hole 13 of dull and stereotyped 2; Now, the photoresist grid line on grating 9 is vertical with ion beam current 7, i.e. δ=0, and so far, the verticality of grating 9 grid line and ion beam current 7 adjusts complete.
Described blazed grating ion beam etching device in present embodiment comprises laser instrument 1, sample stage 8 tieed up by dull and stereotyped 2, ion gun aperture plate 5, ion gun 6, the catoptron 4, five that is pasted on ion gun aperture plate plane and grating 9, five is tieed up sample stage 8 and can be realized the rotation of grating 9, pitching and D translation motion; Two orthogonal straight lines with computer drawing are carved with on described dull and stereotyped 2 surfaces, i.e. the first straight line 12 and the second straight line 14; And with two straight-line intersections for the center of circle, the bore in the center of circle, the i.e. diameter of center hole 13 are suitable with laser beam beam spot diameter; Dull and stereotyped 2 are fixed on laser instrument 1, and ion gun 6 produces ion beam current through ion gun aperture plate 5 outgoing.
The 1200gr/mm photoresist grating mask that grating 9 described in present embodiment adopts holographic exposure mode to obtain, photoresist is Japanese shipley1805 positive photoresist, and substrate is K9 glass; The cathode filament source that ion gun 6 adopts Beijing Rui Deyige company to produce, aperture plate 5 is molybdenum net, bore Φ 150mm; Laser instrument 1 adopts He-Ne laser instrument, and outgoing wavelength is 632.8nm; Dull and stereotyped 2 adopt transparent organic glass dull and stereotyped; On dull and stereotyped 2, the first orthogonal straight line 12 and the second straight line 14 make accurate Drawing of computerizeing control; Center hole 13 on dull and stereotyped 2 is with two straight-line intersections for the center of circle, and with laser instrument 1 shoot laser bundle bore for diameter, profit is computerizedd control and accurately opened hole, and its bore is Φ 2.5mm; Five dimension sample stages 8 adopt oxygen-free copper to make, can realize the accurate adjustment of rotation, pitching and three direction translations.
The foregoing is only embodiments of the invention, be not used for limiting practical range of the present invention.Having in any art knows the knowledgeable usually, and without departing from the spirit and scope of the present invention, when doing various change and retouching, therefore protection scope of the present invention should be as the criterion depending on claims institute confining spectrum.
Claims (3)
1. adjust the method for grid line and line verticality in blazed grating ion beam etching device, it is characterized in that, the method is realized by following steps:
Step one, ion gun (6) produce ion beam current through the outgoing of ion gun aperture plate, and the exit direction of described ion beam current (7) is perpendicular to ion gun aperture plate (5) plane;
Step 2, the light beam of light source center hole (13) through dull and stereotyped (2) is incident to catoptron (4), and the light beam reflected through catoptron (4) is incident to grating (9) surface formation 0 order diffraction light and-1 order diffraction light; The center hole (13) that 0 order diffraction light is incident to flat board (2) is interior and vertical with grating (9) grid line; Described catoptron (4) is fixed on ion gun aperture plate (5) surface described in step one, and the reflecting surface of catoptron (4) is parallel with ion gun aperture plate (5) surface;
Step 3, adjustment grating,-1 order diffraction light described in step 2 is made to be incident to the center hole (13) of flat board (2),-1 order diffraction light being incident to the center hole (13) of flat board (2) is vertical with grating (9) grid line, the plane that described-1 order diffraction light is formed is vertical with the reflecting surface of catoptron (4), finally realizes ion beam current direction vertical with grating (9) grid line direction.
2. the method for grid line and line verticality in adjustment blazed grating ion beam etching device according to claim 1, it is characterized in that, described light beam of light source is perpendicular to dull and stereotyped (2) surface, and the spot diameter of described light beam is identical with the diameter of the center hole (13) of dull and stereotyped (2).
3. the method for grid line and line verticality in adjustment blazed grating ion beam etching device according to claim 1, it is characterized in that, adjust grating in step 3 and realize becoming blazing angle θ to grating (9) surface with ion beam current (7) especially by five dimensions sample stage (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310011786.2A CN103091753B (en) | 2013-01-11 | 2013-01-11 | Method for adjusting perpendicularity between grating line and beam current in blazed grating ion beam etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310011786.2A CN103091753B (en) | 2013-01-11 | 2013-01-11 | Method for adjusting perpendicularity between grating line and beam current in blazed grating ion beam etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103091753A CN103091753A (en) | 2013-05-08 |
| CN103091753B true CN103091753B (en) | 2015-02-18 |
Family
ID=48204547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310011786.2A Active CN103091753B (en) | 2013-01-11 | 2013-01-11 | Method for adjusting perpendicularity between grating line and beam current in blazed grating ion beam etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103091753B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113267889A (en) * | 2021-06-08 | 2021-08-17 | 中国科学院长春光学精密机械与物理研究所 | Secondary phase off-axis Fresnel zone plate design method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6414764B1 (en) * | 1996-12-02 | 2002-07-02 | Francois Ouellette | Ring interferometer configuration for writing gratings |
| CN101082804A (en) * | 2006-06-02 | 2007-12-05 | 中国科学院长春光学精密机械与物理研究所 | Method for determining angular separation between two laser bean in concave surface holographic grating production light path |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4349104B2 (en) * | 2003-11-27 | 2009-10-21 | 株式会社島津製作所 | Blazed holographic grating, manufacturing method thereof, and replica grating |
-
2013
- 2013-01-11 CN CN201310011786.2A patent/CN103091753B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6414764B1 (en) * | 1996-12-02 | 2002-07-02 | Francois Ouellette | Ring interferometer configuration for writing gratings |
| CN101082804A (en) * | 2006-06-02 | 2007-12-05 | 中国科学院长春光学精密机械与物理研究所 | Method for determining angular separation between two laser bean in concave surface holographic grating production light path |
Non-Patent Citations (1)
| Title |
|---|
| 紫外全息闪耀光栅的制作;谭鑫等;《光学精密工程》;20100731;第18卷(第7期);1536-1542 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103091753A (en) | 2013-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101799569B (en) | Method for producing convex double blazed grating | |
| CN110632689B (en) | Method for manufacturing surface relief grating structure | |
| CN105259739A (en) | Photoetching method and device for preparing two-dimensional periodic array based on self-imaging of ultraviolet broadband spectrum | |
| CN101793988A (en) | Method for accurately adjusting groove density in light path for making holographic grating | |
| CN105157578A (en) | System and method of measuring off-axis amount and off-axis angle of off-axis paraboloid main reflector | |
| JP2012141311A (en) | Apparatus for measuring transmissivity of patterned glass substrate | |
| KR20100120255A (en) | Method for fabricating 3d microstructure | |
| TWI785352B (en) | Radiation source | |
| CN103094815B (en) | Auxiliary device for light path standard and angular adjustment and use method thereof | |
| CN101546002B (en) | Sub-wavelength fused silica transmission polarization light-splitting grating at 1064 nano wave band | |
| CN102722091B (en) | Two-beam interference photoetching method and system | |
| CN103698836B (en) | The method in accurate adjustment interference fringe direction in scan exposure light path | |
| CN102540475B (en) | Holographic exposure optical path adjusting method for preparing intermediate infrared distribution feedback grating | |
| CN102950382B (en) | Laser direct writing etching system for etching electronically-controlled diffraction optical devices, and method thereof | |
| CN103091753B (en) | Method for adjusting perpendicularity between grating line and beam current in blazed grating ion beam etching device | |
| CN211661329U (en) | Micro axicon manufacturing device based on femtosecond laser refractive index modification technology | |
| CN101819323B (en) | Method for adjusting verticality between Lloyd mirror and grating substrate in Lloyd mirror device | |
| CN104111531B (en) | A kind of salt free ligands grating structure light production method of Parameter adjustable and device | |
| CN114296245B (en) | Raman beam shaping device | |
| CN102087480A (en) | Method for adjusting real-time monitoring device in exposure light path of planar holographic grating | |
| CN101295553B (en) | X ray holography diffraction grating beam divider | |
| CN201181361Y (en) | Double-light source collimation light pipe | |
| Leiner et al. | A simulation procedure interfacing ray-tracing and finite-difference time-domain methods for a combined simulation of diffractive and refractive optical elements | |
| WO2023097850A1 (en) | Diffractive optical element and preparation method therefor, and method for designing master diffraction pattern | |
| CN209513047U (en) | A kind of micro- ladder reflecting mirror and spectrometer for static Fourier transform spectrometer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |