CN103091753A

CN103091753A - Method for adjusting perpendicularity between grating line and beam current in blazed grating ion beam etching device

Info

Publication number: CN103091753A
Application number: CN2013100117862A
Authority: CN
Inventors: 谭鑫; 吴娜; 巴音贺希格; 齐向东
Original assignee: Changchun Institute of Optics Fine Mechanics and Physics of CAS
Current assignee: Changchun Institute of Optics Fine Mechanics and Physics of CAS
Priority date: 2013-01-11
Filing date: 2013-01-11
Publication date: 2013-05-08
Anticipated expiration: 2033-01-11
Also published as: CN103091753B

Abstract

The invention discloses a method for adjusting perpendicularity between a grating line and a beam current in a blazed grating ion beam etching device and belongs to the technical field of spectra. The method for adjusting the perpendicularity between the grating line and the beam current in the blazed grating ion beam etching device solves the problems that an existing method for adjusting the perpendicularity between the grating line and the beam current is low in precision of perpendicularity and errors can occur. The method comprises the steps of building the ion beam etching device, preparing two flat plates with each flat plate provided with two direct-cross lines and a central round holes, installing a laser device, a reflecting mirror and the flat plates in the ion beam etching device, enabling the laser beams emitted by the laser device to pass through the round holes of the flat plates and enter into the reflecting mirror, light reflected by the reflecting mirror enter to the surface of a grating and forms zero level diffraction light or negative one level diffraction light, enabling the negative one level diffraction light to enter back into the round holes in the flat plates, and finally the adjusting of the perpendicularity between the grating line and the beam current is achieved. The method for adjusting the perpendicularity between the grating line and the beam current in the blazed grating ion beam etching device is capable of adjusting the perpendicularity between the grating line and the beam current fast and accurately and has great significance for manufacturing high-quality plane blazed holographic gratings.

Description

The method of grid line and line verticality in adjustment blazed grating ion beam etching device

Technical field

The present invention relates to the spectral technique field, the plane Production of blazed holographic grating that is specifically related to is made the method for adjusting grid line and ion beam current verticality in the ion beam etching device that uses.

Background technology

The ion beam etching device is a kind of plane Production of blazed holographic grating producing device commonly used, ion beam current is with perpendicular to photoresist grid line direction, with the angled substrate surface that is incident to of photoresist grating substrate, suprabasil sinusoidal pattern photoresist grating flute profile etching is transferred in substrate, form the triangular groove shape Production of blazed holographic grating, its blazing angle equals the incident angle of line.Its great advantage is: ion beam current is perpendicular to the grid line direction, and therefore, as long as adjust the angle of substrate and line, i.e. incident angle can be made the Production of blazed holographic grating of different blazing angles.

But in practical operation, the accurate adjustment of this device is comparatively difficult, and the degree of accuracy of photoresist grating grid line and ion beam current verticality is difficult to guarantee.The etching principle of plane Production of blazed holographic grating is, it is θ that wish is made blazing angle, the grating cycle is the plane Production of blazed holographic grating of d, it is d that the grating cycle need be provided, and dutycycle is 1:1, is highly the sinusoidal pattern photoresist mask of h=0.7326dtan θ, make ion beam current perpendicular to photoresist grid line direction, with the photoresist grating substrate substrate surface that is incident to into θ angle, by certain etching time, the formation blazing angle is

The plane Production of blazed holographic grating.If ion beam current and photoresist grid line direction out of plumb, namely ion beam current is at the projection of grating substrate surface and photoresist grid line vertical line δ at an angle, the blazing angle of the plane Production of blazed holographic grating that forms

, as seen only having when δ=0, the blazing angle of acquisition is just identical with design load.Namely, in the Production of blazed holographic grating etching device of plane, blazing angle and the design load that must guarantee the blazed grating that the strict vertical guarantee of ion beam current and photoresist grating grid line is produced are identical, otherwise just can produce the blazing angle error, ion beam current is larger in the projection of grating substrate surface and photoresist grid line vertical line angle δ, and the error of blazing angle is larger.

At present, the method for adjustment verticality is mainly to rely on grating substrate end face to guarantee by locating surface by sample stage gulde edge, ion gun housing.Because the machining precision of ion gun housing, sample stage gulde edge is not high, the grating substrate can't guarantee that in manufacturing process end face is vertical with grid line and larger a part of substrate is arranged is circular-base in addition, so its verticality precision is lower, need to set up a kind of new adjustment ion beam current and the method for photoresist grid line perpendicular direction degree.

Summary of the invention

The present invention exists the verticality precision lower and have the problem of error for solving the existing method of adjusting ion beam and grating line perpendicular direction degree, and a kind of method of adjusting grid line and line verticality in blazed grating ion beam etching device is provided.

The method of grid line and line verticality in adjustment blazed grating ion beam etching device, the method is realized by following steps:

Step 1, ion gun produce ion beam current through the outgoing of ion gun aperture plate, and the exit direction of described ion beam current is perpendicular to ion gun aperture plate plane;

Step 2, light beam of light source are incident to catoptron through the center hole of flat board, are incident to grating surface through the light beam of mirror reflects and form 0 order diffraction light and-1 order diffraction light; It is interior and vertical with grating grid that 0 order diffraction light is incident to dull and stereotyped center hole; Described catoptron is fixed on the described ion gun aperture plate of step 1 surface, and the reflecting surface of catoptron is parallel with ion gun aperture plate surface;

Step 3, adjustment grating, make described-1 order diffraction light of step 2 be incident to dull and stereotyped center hole,-1 order diffraction light that is incident to dull and stereotyped center hole is vertical with grating grid, described-1 order diffraction light formed plane is vertical with the reflecting surface of catoptron, finally realizes ion beam current direction and grating grid perpendicular direction.

Principle of work of the present invention: the verticality that method of the present invention utilizes optical means to adjust grating grid and ion beam current can reach very high precision.Ion beam current 7 be the plasma that produces of ion gun 6 through 5 outgoing of ion gun aperture plate, its beam direction is perpendicular to ion gun aperture plate 5; Plane mirror 4 sticks on the ion gun aperture plate, and its reflecting surface is surperficial parallel with ion gun aperture plate 5, and namely ion beam current 7 is perpendicular to catoptron 4; Laser beam 3 is incident on catoptron 4, and reflected light reflexes to grating 9 surface formation-1 order diffraction light 11 and gets back in the outgoing circular hole 13 of laser beam 3, laser beam 3 and-1 formed plane of order diffraction light 11 and grating 9 grid line perpendicular directions; Simultaneously, this plane is vertical with the reflecting surface of plane mirror 4, so ion beam current 7 directions and grating 9 grid line perpendicular directions.

Beneficial effect of the present invention: the method that the present invention proposes can be adjusted the verticality of photoresist grid line and ion beam current in the Production of blazed holographic grating ion beam etching device of plane fast and accurately, to producing high-quality plane Production of blazed holographic grating, direct important value is arranged.

Description of drawings

Fig. 1 is the device schematic diagram in the method for grid line and line verticality in adjustment blazed grating ion beam etching device of the present invention;

Fig. 2 is the schematic diagram of the method middle plateform of grid line and line verticality in described adjustment blazed grating ion beam etching device;

Fig. 3 is laser beam and the optical grating diffraction light schematic diagram of laser instrument in grating grid and ion beam current out of plumb situation in the method for grid line and line verticality in described adjustment blazed grating ion beam etching device;

Fig. 4 is laser beam and the optical grating diffraction light schematic diagram of laser instrument in grating grid situation vertical with ion beam current in the method for grid line and line verticality in adjustment blazed grating ion beam etching device of the present invention.

Embodiment

Embodiment one, in conjunction with Fig. 1 to Fig. 4, present embodiment is described, adjusts the method for grid line and line verticality in blazed grating ion beam etching device, the method detailed process be:

The ion beam current that step 1, ion gun 6 produce is by aperture plate 5 outgoing, its perpendicular direction is in the aperture plate plane, vertical with grating 9 grid lines, into θ angle with its surface, be the blazing angle of institute's etching plane Production of blazed holographic grating, the adjustment at θ angle can be realized by adjusting five dimension sample stages 8, the plane Production of blazed holographic grating of different blazing angles can be obtained.

Step 2, the laser beam 3 that laser instrument 1 sends incides catoptron 4 by dull and stereotyped 2 center hole 13, and the light that reflects through catoptron 4 is incident to grating 9 surface formation 0 order diffraction light 10 and-1 order diffraction light 11; If the photoresist grid line on grating 9 and ion beam current 7 out of plumb, namely the grid line vertical line becomes the δ angle with ion beam current, and as shown in Figure 3 ,-1 order diffraction light 11 will shine and form hot spot 15 on dull and stereotyped 2, and the position of hot spot 15 is relevant with δ angle and θ angle;

Step 3 by the rotation capable of regulating δ angle of five dimension sample stages 8, by the pitching capable of regulating θ angle of five dimension sample stages 8, returns in the center hole 13 of flat board 2-1 order diffraction light 11 incidents; At this moment, the photoresist grid line on grating 9 is vertical with ion beam current 7, i.e. δ=0, and so far, the verticality of grating 9 grid lines and ion beam current 7 is adjusted complete.

Described blazed grating ion beam etching device in present embodiment comprises that laser instrument 1, dull and stereotyped 2, ion gun aperture plate 5, ion gun 6, the catoptron 4 that is pasted on ion gun aperture plate plane, five dimension sample stages 8 and grating 9, five dimension sample stages 8 can realize rotation, pitching and the D translation motion of grating 9; Two orthogonal straight lines with computer drawing, i.e. the first straight line 12 and the second straight line 14 are carved with in described dull and stereotyped 2 surfaces; And take two straight-line intersections as the center of circle, the bore in the center of circle, namely the diameter of center hole 13, suitable with the laser beam beam spot diameter; Dull and stereotyped 2 are fixed on laser instrument 1, and ion gun 6 produces ion beam current through 5 outgoing of ion gun aperture plate.

The 1200gr/mm photoresist grating mask that the described grating 9 of present embodiment adopts the holographic exposure mode to obtain, photoresist is Japanese shipley1805 positive photoresist, substrate is K9 glass; The cathode filament source that ion gun 6 adopts Beijing Rui Deyige company to produce, aperture plate 5 is the molybdenum net, bore Φ 150mm; Laser instrument 1 adopts the He-Ne laser instrument, and the outgoing wavelength is 632.8nm; Dull and stereotyped 2 adopt transparent organic glass dull and stereotyped; On dull and stereotyped 2, the first straight line 12 and second straight line 14 of quadrature make the accurate Drawing of computerizeing control; Center hole 13 on dull and stereotyped 2 is take two straight-line intersections as the center of circle, take laser instrument 1 outgoing laser beam bore as diameter, utilizes computer control accurately to open the hole, and its bore is Φ 2.5mm; Five dimension sample stages 8 adopt oxygen-free coppers to make, and can realize rotating, the accurate adjustment of pitching and three direction translations.

The above is only embodiments of the invention, is not to limit practical range of the present invention.Under any, having in technical field known the knowledgeable usually, and without departing from the spirit and scope of the present invention, when can do various changes and retouching, so protection scope of the present invention should be looked claims institutes confining spectrum and is as the criterion.

Claims

1. the method for grid line and line verticality in adjustment blazed grating ion beam etching device, is characterized in that, the method is realized by following steps:

Step 1, ion gun (6) produce ion beam current through the outgoing of ion gun aperture plate, and the exit direction of described ion beam current (7) is perpendicular to ion gun aperture plate (5) plane;

Step 2, light beam of light source are incident to catoptron (4) through the center hole (13) of dull and stereotyped (2), and the light beam that reflects through catoptron (4) is incident to grating (9) surface formation 0 order diffraction light and-1 order diffraction light; 0 order diffraction light is incident in the center hole (13) of flat board (2) and is vertical with grating (9) grid line; Described catoptron (4) is fixed on the described ion gun aperture plate of step 1 (5) surface, and the reflecting surface of catoptron (4) is parallel with ion gun aperture plate (5) surface;

Step 3, adjustment grating, make described-1 order diffraction light of step 2 be incident to the center hole (13) of flat board (2),-1 order diffraction light of center hole (13) that is incident to flat board (2) is vertical with grating (9) grid line, described-1 order diffraction light formed plane is vertical with the reflecting surface of catoptron (4), finally realizes ion beam current direction and grating (9) grid line perpendicular direction.

2. the method for grid line and line verticality in adjustment blazed grating ion beam etching device according to claim 1, it is characterized in that, described light beam of light source is perpendicular to dull and stereotyped (2) surface, and the spot diameter of described light beam is identical with the diameter of the center hole (13) of dull and stereotyped (2).

3. the method for grid line and line verticality in adjustment blazed grating ion beam etching device according to claim 1, it is characterized in that, adjust grating in step 3 concrete into θ angle to grating (9) surface and ion beam current (7) by five dimension sample stages (8) realizations.