CN103079339B - A kind of metal ceramic composite substrate and manufacture method thereof - Google Patents
A kind of metal ceramic composite substrate and manufacture method thereof Download PDFInfo
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- CN103079339B CN103079339B CN201310031092.5A CN201310031092A CN103079339B CN 103079339 B CN103079339 B CN 103079339B CN 201310031092 A CN201310031092 A CN 201310031092A CN 103079339 B CN103079339 B CN 103079339B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
The present invention is applicable to substrate field, provides a kind of metal ceramic composite substrate and manufacture method thereof, is intended to the problem solving the poor thermal conductivity of metal substrate and the binding ability difference of metal ceramic composite substrate in prior art.Metal ceramic composite substrate provided by the invention comprises metallic matrix, the ceramic layer be arranged on metallic matrix, be arranged at surface ceramii layer metallic circuit layer and to be formed on metallic matrix and to connect the cermet transition zone of ceramic layer, ceramic layer is between cermet transition zone and metallic circuit layer, cermet transition zone is made up of metal and metal nitride, and ceramic layer is made up of ceramic membrane.The present invention utilizes ceramic layer to improve the thermal conductivity of substrate, by arranging cermet transition zone to improve the binding ability between ceramic layer and metallic matrix, improves in conjunction with reliability.
Description
Technical field
The invention belongs to substrate field, particularly relate to a kind of metal ceramic composite substrate and manufacture method thereof.
Background technology
Along with development that is high-power, high-density electronic device, the heat dissipation problem of electronic device becomes increasingly conspicuous.The particularly application of illumination of high-power semiconductor device in recent years, such as Light-Emitting Diode (LED), makes to solve its heat dissipation problem and seems abnormal important.Owing to not containing infrared part in the spectrum of LED, the heat that LED chip produces can only be dispelled the heat by substrate with heat conducting form.
Usually, these electronic devices are generally arranged on to be had on the wiring board of dielectric base, and such as, adopt the low epoxy resin of conductive coefficient as the metal-based copper-clad plate of insulation, adhesive linkage, radiating effect is not ideal enough, cannot meet the requirement of use far away.
In order to improve the problems referred to above, industry adopted multiple diverse ways.Such as, a kind of method is exactly on traditional printed circuit board (PCB), embed metallic core to improve the heat radiation of circuit board aspect, form metal base printed circuit board (Metal Core PCB, MCPCB), but there are some restrictions in MCPCB, when Circuits System operates can not more than 140 DEG C and in the fabrication process must not more than 250 DEG C ~ 300 DEG C, and the thermal conductivity of its polymer insulation layer is poor, good heat-conducting effect cannot be obtained; Another kind method adopts ceramic material as baseplate material, is at high temperature bonded directly to aluminium oxide (Al by Copper Foil
2o
3) or aluminium nitride (AlN) ceramic substrate surface (single or double) on to form ceramic substrate, although this kind of ceramic substrate has good thermal conductivity and insulating properties, but the ceramic material making high heat conduction needs to complete at high temperature under high pressure, exist manufacture difficulty, cost is high, be difficult to make the problems such as large-area substrates.
A kind of method is the metal ceramic composite substrate by forming one deck ceramic membrane in metallic substrate surfaces in addition.As Chinese patent application CN200710087523.4 discloses a kind of anodized metal substrate module to improve the heat-radiating properties of circuit board; Chinese patent application CN201010505050.7 discloses a kind of metal matrix aluminium nitride insulated substrate preparation method, is direct spraying aln layer on metallic substrates; And Chinese patent application CN201010600737.9 discloses a kind of thermal diffusion component and manufacture method thereof of tool aluminium nitride film, be directly form one deck aluminium nitride film on metallic substrates.Due to metal and the difference of pottery in crystal parameters, physical characteristic (as thermal coefficient of expansion) etc., make metal surface not easily form ceramic membrane, the binding ability of ceramic membrane and metallic matrix is also poor.
Summary of the invention
The object of the present invention is to provide a kind of metal ceramic composite substrate and manufacture method thereof, be intended to the problem solving the poor thermal conductivity of metal substrate and the binding ability difference of metal ceramic composite substrate in prior art.
The embodiment of the present invention realizes like this, metal ceramic composite substrate comprises metallic matrix, is arranged at the ceramic layer of the first surface of described metallic matrix and is arranged at the metallic circuit layer deviating from the surface of described metallic matrix of described ceramic layer, and described ceramic layer is between described metallic matrix and described metallic circuit layer.This metal ceramic composite substrate also comprises by injecting that nitrogen is formed on the first surface of described metallic matrix and connecting the cermet transition zone of described ceramic layer, described cermet transition zone is that the mixture of metal and metal nitride is formed, and described ceramic layer is made up of ceramic membrane.
Further, described metallic matrix is made up of aluminium or aluminum alloy materials.
Preferably, described cermet transition zone is that the mixture of aluminium and aluminium nitride is formed, and the part by weight scope of described aluminium nitride is 20% ~ 80%, and the thickness range of described cermet transition zone is 1nm ~ 1000nm.
Further, described ceramic membrane is nitride film.
Preferably, silver-plated or the copper foil layer that described metallic circuit layer is formed by copper foil layer, copper foil layer and the surface at described copper foil layer and the nickel plating porpezite formed on the surface of described copper foil layer are formed, and described copper foil layer is provided with the circuit structure formed by etching mode.
Another object of the embodiment of the present invention is the manufacture method providing a kind of metal ceramic composite substrate, comprises the following steps: grind and the first surface of polishing metal matrix; Utilize ion implantation to inject nitrogen at the first surface of described metallic matrix and also form the cermet transition zone be made up of metal and metal nitride; CVD (Chemical Vapor Deposition) method is utilized to form on described cermet transition zone one surface the ceramic layer be made up of ceramic membrane; And metallic circuit layer is set on the surface deviating from described metallic matrix of described ceramic layer, to make described ceramic layer between described cermet transition zone and described metallic circuit layer.
Further, described metallic matrix is made up of aluminium or aluminum alloy materials.
Preferably, described cermet transition zone is that the mixture of aluminium and aluminium nitride is formed, and the part by weight scope of described aluminium nitride is 20% ~ 80%, and the thickness range of described cermet transition zone is 1nm ~ 1000nm.
Further, described ceramic membrane is nitride film.
Preferably, the step arranging metallic circuit layer on the surface deviating from described metallic matrix of described ceramic layer comprises: deviate from the surperficial pressing of described metallic matrix, sintering, plating, evaporation or vacuum splashing and plating one deck Copper Foil at described ceramic layer; And utilize the mode of mask etching to make circuit structure on described Copper Foil.
The present invention utilizes the ceramic layer be made up of nitride film to improve the heat conductivility of metal ceramic composite substrate, by forming cermet transition zone to improve the adhesion between metallic matrix and ceramic layer on metallic matrix, thus improve the reliability of metal ceramic composite substrate.And, the present invention utilizes ion implantation to be injected by nitrogen ion beam to form cermet transition zone in metallic matrix, and the method, without the need to carrying out under high temperature or condition of high voltage, also can not be peeling phenomenon to metal base surface, simple to operate, manufacturing condition easily controls.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the metal ceramic composite substrate that the embodiment of the present invention provides.
Fig. 2 is the schematic diagram of the metal ceramic composite substrate that another embodiment of the present invention provides.
Fig. 3 is the schematic diagram of the metal ceramic composite substrate that further embodiment of this invention provides.
Fig. 4 is the schematic diagram of the metal ceramic composite substrate that yet another embodiment of the invention provides.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The metal ceramic composite substrate that the embodiment of the present invention provides comprises metallic matrix, be arranged at the ceramic layer of the first surface of metallic matrix, be arranged at the metallic circuit layer deviating from the surface of metallic matrix of ceramic layer and by injecting that nitrogen is formed on the first surface of metallic matrix and connecting the cermet transition zone of ceramic layer, described ceramic layer is between described cermet transition zone and described metallic circuit layer, cermet transition zone is made up of the mixture of metal and metal nitride, and ceramic layer is made up of ceramic membrane.The present invention has good heat conductivility by arranging ceramic layer to make this metal ceramic composite substrate, thermal conductivity is greater than 170W/mK, and to make ceramic layer and metallic matrix, there is good adhesion by arranging cermet transition zone on metallic matrix, provide the reliability of this metal ceramic composite substrate.
Below in conjunction with embodiment accompanying drawing, metal ceramic composite substrate of the present invention is further described.
Embodiment one:
Please refer to Fig. 1, metal ceramic composite substrate comprises metallic matrix 11, be arranged at the ceramic layer 13 of the first surface 110 of metallic matrix 11, be arranged at metallic circuit layer 14 on the surface deviating from first surface 110 of ceramic layer 13 and by injecting that nitrogen is formed on the first surface 110 of metallic matrix 11 and connecting the cermet transition zone 12 of ceramic layer 13, this ceramic layer 13 is made up of ceramic membrane and between cermet transition zone 12 and metallic circuit layer 14, this cermet transition zone 12 is that the mixture of can metal nitride is formed.
The material of metallic matrix 11 can be aluminium, aluminium alloy, magnesium alloy, titanium alloy, nickel alloy, steel and copper alloy, kirsite, lead or Intermatallic Ti-Al compound etc.During use, the material selecting metallic matrix 11 can be required according to the serviceability of metal ceramic composite substrate, such as, industry integrated circuit need high heat conduction, low bulk metal-base composites as heat dissipation element and substrate, therefore, the metal such as silver, copper, aluminium with high thermal conductivity can be selected to be basis material.
In the present embodiment, metallic matrix 11 is made up of aluminium or aluminum alloy materials, has good heat-resisting, the performance such as heat conduction and certain elevated temperature strength to make this metallic matrix 11.Cermet transition zone 12 is mixtures of metal by being formed at metallic matrix 11 surface imp lantation nitrogen and metal nitride, and wherein, the part by weight shared by metal nitride is 20% ~ 80%.
In the present embodiment, this cermet transition zone 12 is made up of the mixture of aluminium and aluminium nitride, and wherein, the part by weight shared by aluminium nitride is 20% ~ 80%.
The thickness range of cermet transition zone 12 is 1nm ~ 1000nm, and preferably, this thickness range is 10nm ~ 100nm.
The present invention by arranging cermet transition zone 12 to improve the adhesion between ceramic layer 13 and metallic matrix 11, thus improves the reliability of this metal ceramic composite substrate.
Ceramic layer 13 is made up of the ceramic membrane good with metallic matrix 11 adhesion, and such as, sull or nitride film, sull can be aluminum oxide film, zirconia film or thin film of titanium oxide.In the present embodiment, ceramic layer 13 is nitride film, preferably uses the aluminium nitride film that thermal resistance is less.This ceramic layer 13 adopts nitride film, identical with the aluminium nitride material of the cermet transition zone 12 formed on metallic matrix 11, the adhesion of ceramic layer 13 and cermet transition zone 12 can be strengthened on the one hand, this ceramic layer 13 is made to be combined more firmly with reliable with metallic matrix 11, aluminium nitride film is as the insulating barrier of this metal ceramic composite substrate on the other hand, there is good heat conductivity, thus enhance the heat conductivility of this metal ceramic composite substrate.
Metallic circuit layer 14 is arranged at the side deviating from metallic matrix 11 of ceramic layer 13, connects for circuit.In the present embodiment, metallic circuit layer 14 is made up of copper foil layer or copper foil layer and the silver coating that formed on copper foil layer surface, and on copper foil layer etched circuit structure.
Embodiment two:
Please refer to Fig. 2, metal ceramic composite substrate comprises metallic matrix 21, be arranged at the ceramic layer 23 of the first surface 210 of metallic matrix 21, be arranged at metallic circuit layer 24 on the surface deviating from first surface 210 of ceramic layer 23 and by injecting that nitrogen is formed on the first surface 210 of metallic matrix 21 and connecting the cermet transition zone 22 of ceramic layer 23, this ceramic layer 13 is made up of ceramic membrane and between cermet transition zone 22 and metallic circuit layer 24, this cermet transition zone 22 is that the mixture of can metal nitride is formed.
The material of metallic matrix 21 can be aluminium, aluminium alloy, magnesium alloy, titanium alloy, nickel alloy, steel and copper alloy, kirsite, lead or Intermatallic Ti-Al compound etc.During use, the material selecting metallic matrix 21 can be required according to the serviceability of metal ceramic composite substrate, such as, industry integrated circuit need high heat conduction, low bulk metal-base composites as heat dissipation element and substrate, therefore, the metal such as silver, copper, aluminium with high thermal conductivity can be selected to be basis material.
In the present embodiment, metallic matrix 21 is made up of aluminium or aluminum alloy materials, has good heat-resisting, the performance such as heat conduction and certain elevated temperature strength to make this metallic matrix 21.
Cermet transition zone 22 is mixtures of metal by being formed at metallic matrix 21 surface imp lantation nitrogen and metal nitride, and wherein, the part by weight shared by metal nitride is 20% ~ 80%.
In the present embodiment, this cermet transition zone 22 is made up of the mixture of aluminium and aluminium nitride, and wherein, the part by weight shared by aluminium nitride is 20% ~ 80%.
The thickness range of cermet transition zone 22 is 1nm ~ 1000nm, and preferably, this thickness range is 10nm ~ 100nm.
The present invention by arranging cermet transition zone 22 to improve the adhesion between ceramic layer 23 and metallic matrix 21, thus improves the reliability of this metal ceramic composite substrate.
Ceramic layer 23 is made up of the ceramic membrane good with metallic matrix 21 adhesion, and such as, sull or nitride film, sull can be aluminum oxide film, zirconia film or thin film of titanium oxide.In the present embodiment, ceramic layer 23 is nitride film, preferably uses the aluminium nitride film that thermal resistance is less.This ceramic layer 23 adopts nitride film, identical with the aluminium nitride material of the cermet transition zone 22 formed on metallic matrix 21, the adhesion of ceramic layer 23 and cermet transition zone 22 can be strengthened on the one hand, this ceramic layer 23 is made to be combined more firmly with reliable with metallic matrix 21, nitride film has good heat conductivity on the other hand, thus enhances the heat conductivility of this metal ceramic composite substrate.And, utilize aluminium nitride film to have insulating barrier as ceramic layer 23 to make this metal ceramic composite substrate, thus can freely on this ceramic layer 23 cloth circuits and install heating element.
Metallic circuit layer 24 is arranged at the side deviating from metallic matrix 21 of ceramic layer 23, connects for circuit.In the present embodiment, metallic circuit layer 24 is made up of copper foil layer or copper foil layer and forming at the nickel plating porpezite layer that formed of copper foil layer surface, and on copper foil layer etched circuit structure.
This metal ceramic composite substrate also comprises the heating element 25 be installed on metallic circuit layer 24 and the gold thread 26 being electrically connected described heating element 25 and metallic circuit layer 24, and this metallic circuit layer 24 is between ceramic layer 23 and heating element 25.In the present embodiment, heating element 25 is for having the Light-Emitting Diode of vertical electrode structure.
In the present embodiment, the mode that heating element 25 welds by eutectic is fixed on metallic circuit layer 24, or is fixed on surface by the mode that thermosonic bonding connects and has on the metallic circuit layer of NiPdAu.
Embodiment three:
The difference of this execution mode and execution mode two is:
The heating element 35 of present embodiment is installed on ceramic layer 33, and namely this heating element 35 is arranged side by side to form a circuit layer on ceramic layer 33 with metallic circuit layer 34, therefore this ceramic layer 33 is between this circuit layer and cermet transition zone 32.
The heating element 35 of present embodiment is for having the Light-Emitting Diode of horizontal electrode structure.
Embodiment four:
The difference of this execution mode and execution mode three is only: comprise multiple heating element 45 be installed on ceramic layer 43, and namely described heating element 45 to be arranged between multiple metallic circuit layer 44 and to be directly arranged on the surface deviating from cermet transition zone 42 of ceramic layer 43 with described metallic circuit layer 44.
The manufacture method of the metal ceramic composite substrate that the embodiment of the present invention provides, comprises the following steps: grind and the first surface of polishing metal matrix; Utilize ion implantation to inject nitrogen at the first surface of metallic matrix and also form the cermet transition zone be made up of metal and metal nitride; CVD (Chemical Vapor Deposition) method is utilized to form on cermet transition zone one surface the ceramic layer be made up of ceramic membrane; And metallic circuit layer is set on the surface deviating from described metallic matrix of ceramic layer, to make ceramic layer between cermet transition zone and metallic circuit layer.The present invention has good thermal conductivity by arranging ceramic layer to make this metal ceramic composite substrate, thermal conductivity is greater than 170W/mK, and, form cermet transition zone by ion implantation and improve reliability to make there is between metallic matrix and ceramic layer good cohesive force.
Be further described below in conjunction with the manufacture method of embodiment accompanying drawing to metal ceramic composite substrate of the present invention.
Embodiment one:
Please refer to Fig. 1, grind and the first surface 110 of polishing metal matrix 11, the thickness of described metallic matrix 11 is about 2mm.The material of metallic matrix 11 can be aluminium, aluminium alloy, magnesium alloy, titanium alloy, nickel alloy, steel and copper alloy, kirsite, lead or Intermatallic Ti-Al compound etc.During use, the material selecting metallic matrix 11 can be required according to the serviceability of metal ceramic composite substrate, such as, industry integrated circuit need high heat conduction, low bulk metal-base composites as heat dissipation element and substrate, therefore, the metal such as silver, copper, aluminium with high thermal conductivity can be selected to be basis material.
In the present embodiment, metallic matrix 11 is made up of aluminium or aluminum alloy materials, has good heat-resisting, the performance such as heat conduction and certain elevated temperature strength to make this metallic matrix 11.
Described metallic matrix 11 is put into ion implantor, ion implantation is carried out at first surface 110, and inject nitrogen to form the cermet transition zone 12 be made up of metal and metal nitride at this first surface 110, wherein, the part by weight shared by metal nitride is 20% ~ 80%.
Ion implantation, after ion beam is mapped to solid material, is subject to the opposing of solid material and speed slowly lowers, and finally rest in solid material.Namely be that the ion beam incidence of 100keV magnitude is in solid material with energy, atom in ion beam and solid material or molecule by there is series of physical with the interaction of chemistry, incident ion is off-energy gradually, finally stop in the material, and cause solid material surface composition, stuctures and properties changes, thus optimize solid material surface performance, or obtain some new excellent properties.
In the present embodiment, the energy of the ion beam adopted is 100keV, the composition of ion beam is N
2 +and the dosage of ion beam is 1 × 10
18ionc/cm
2.Utilize this ion implantation without the need to carrying out under high temperature or condition of high voltage, also phenomenon can not be peeling to metallic matrix 11 surface, but there is physics or/and chemical change by injection nitrogen and metallic matrix 11, and a new superficial layer, i.e. cermet transition zone 12 is formed on this metallic matrix 11.
In the present embodiment, this cermet transition zone 12 is made up of the mixture of aluminium and aluminium nitride, and wherein, the part by weight shared by aluminium nitride is 20% ~ 80%.
The thickness range of cermet transition zone 12 is 1nm ~ 1000nm, and preferably, this thickness range is 10nm ~ 100nm.By arranging cermet transition zone 12 to improve the adhesion between ceramic layer 13 and metallic matrix 11, thus improve the reliability of this metal ceramic composite substrate.
Utilize CVD (Chemical Vapor Deposition) method on the first surface 110 of metallic matrix 11, form the ceramic layer 13 be made up of ceramic membrane, to make this metal ceramic composite substrate, there is thermal conductivity.
Vapour deposition process utilizes the physics, the chemical process that occur in gas phase, forms functional or ornamental metal, nonmetal or compound coat at surface of the work.Vapour deposition process, according to membrane formation mechanism, can be divided into chemical vapour deposition (CVD), physical vapour deposition (PVD) and plasma gas phase deposition.Chemical vapour deposition (CVD) refers to introduces reative cell, in the process of substrate surface generation chemical reaction film former the steam containing the gaseous reactant or liquid reactants that form film element and reaction other gas required.Physical vapour deposition (PVD) refers to by processes such as evaporation, ionization or sputterings, produces metallic and react with reacting gas to form Compound deposition at surface of the work, and physical vapor deposition has Vacuum Deposition, vacuum sputtering and ion plating three kinds of forms.Plasma gas phase deposition refers to uses plasma activated reactive gas, promotes to carry out chemical reaction at matrix surface or nearly space surface, generates the process of solid film.
In the present embodiment, described CVD (Chemical Vapor Deposition) method is physics or chemical gaseous phase depositing process, such as, adopt the method for magnetically controlled DC sputtering to form the ceramic layer 13 that a layer thickness is about 2 microns on the surface of cermet transition zone 12.
Ceramic layer 13 is made up of the ceramic membrane good with metallic matrix 11 adhesion, and such as, sull or nitride film, sull can be aluminum oxide film, zirconia film or thin film of titanium oxide.In the present embodiment, ceramic layer 13 is nitride film, preferably uses the aluminium nitride film that thermal resistance is less.This ceramic layer 13 adopts nitride film, identical with the aluminium nitride material of the cermet transition zone 12 formed on metallic matrix 11, the adhesion of ceramic layer 13 and cermet transition zone 12 can be strengthened on the one hand, this ceramic layer 13 is made to be combined more firmly with reliable with metallic matrix 11, aluminium nitride film is as the insulating barrier of this metal ceramic composite substrate on the other hand, there is good heat conductivity, thus enhance the heat conductivility of this metal ceramic composite substrate.
Metallic circuit layer 14 is set on ceramic layer 13 surface to make ceramic layer 13 between cermet transition zone 12 and metallic circuit layer 14.Specifically, the step arranging metallic circuit layer 14 on the surface deviating from metallic matrix 11 of ceramic layer 13 comprises: deviate from the surperficial pressing of metallic matrix 11, sintering, plating, evaporation or vacuum splashing and plating one deck Copper Foil at ceramic layer 13; And utilize the mode of mask etching to make circuit structure on described Copper Foil to connect for circuit.
In the present embodiment, metallic circuit layer 14 by Copper Foil or Copper Foil and silver-platedly forming of being formed at copper foil surface, and utilizes etching method to form circuit structure on Copper Foil, and the thickness of described metallic circuit layer 14 is about 35 microns.
Embodiment two:
Please refer to Fig. 1, grind and the first surface 210 of polishing metal matrix 21, the thickness of described metallic matrix 21 is about 1mm.The material of metallic matrix 11 can be aluminium, aluminium alloy, magnesium alloy, titanium alloy, nickel alloy, steel and copper alloy, kirsite, lead or Intermatallic Ti-Al compound etc.During use, the material selecting metallic matrix 11 can be required according to the serviceability of metal ceramic composite substrate, such as, industry integrated circuit need high heat conduction, low bulk metal-base composites as heat dissipation element and substrate, therefore, the metal such as silver, copper, aluminium with high thermal conductivity can be selected to be basis material.
In the present embodiment, metallic matrix 21 is made up of aluminium or aluminium alloy, is in particular the almag that magnesium content is about 3%, has good heat-resisting, the performance such as heat conduction and certain elevated temperature strength to make this metallic matrix 11.
Described metallic matrix 21 is put into ion implantor, ion implantation is carried out at first surface 210, and inject nitrogen to form the cermet transition zone 22 be made up of metal and metal nitride at this first surface 210, wherein, the part by weight shared by metal nitride is 20% ~ 80%.
Specifically, the energy of the ion beam adopted is 150keV, the composition of ion beam is N
2 +and the dosage of ion beam is 5 × 10
18ionc/cm
2.Utilize this ion implantation without the need to carrying out under high temperature or condition of high voltage, also phenomenon can not be peeling to metallic matrix 21 surface, but there is physics or/and chemical change by injection nitrogen and metallic matrix 21, and a new superficial layer, i.e. cermet transition zone 22 is formed on this metallic matrix 21.
In the present embodiment, this cermet transition zone 22 is made up of the mixture of aluminium and aluminium nitride, and wherein, the part by weight shared by aluminium nitride is 20% ~ 80%.
The thickness range of cermet transition zone 22 is 1nm ~ 1000nm, and preferably, this thickness range is 10nm ~ 100nm.By arranging cermet transition zone 22 to improve the adhesion between ceramic layer 23 and metallic matrix 21, thus improve the reliability of this metal ceramic composite substrate.
Utilize CVD (Chemical Vapor Deposition) method on the first surface 210 of metallic matrix 21, form the ceramic layer 23 be made up of ceramic membrane, to make this metal ceramic composite substrate, there is thermal conductivity.Specifically, described CVD (Chemical Vapor Deposition) method is physics or chemical gaseous phase depositing process, such as, adopt the method for magnetically controlled DC sputtering to form the ceramic layer 23 that a layer thickness is about 5 microns on the surface of cermet transition zone 22.
Ceramic layer 13 is made up of the ceramic membrane good with metallic matrix 11 adhesion, and such as, sull or nitride film, sull can be aluminum oxide film, zirconia film or thin film of titanium oxide.In the present embodiment, ceramic layer 13 is nitride film, preferably uses the aluminium nitride film that thermal resistance is less.This ceramic layer 13 adopts nitride film, identical with the aluminium nitride material of the cermet transition zone 12 formed on metallic matrix 11, the adhesion of ceramic layer 13 and cermet transition zone 12 can be strengthened on the one hand, this ceramic layer 13 is made to be combined more firmly with reliable with metallic matrix 11, nitride film has good heat conductivity on the other hand, thus enhances the heat conductivility of this metal ceramic composite substrate.And, utilize aluminium nitride film to have insulating barrier as ceramic layer 23 to make this metal ceramic composite substrate, thus can freely on this ceramic layer 23 cloth circuits and install heating element.
Metallic circuit layer 24 is set on ceramic layer 23 surface to make ceramic layer 23 between cermet transition zone 22 and metallic circuit layer 24.Specifically, the step arranging metallic circuit layer 24 on the surface deviating from metallic matrix 21 of ceramic layer 23 comprises: deviate from the surperficial pressing of metallic matrix 21, sintering, plating, evaporation or vacuum splashing and plating one deck Copper Foil at ceramic layer 23; And utilize the mode of mask etching to make circuit structure on described Copper Foil to connect for circuit.
In the present embodiment, metallic circuit layer 24 is by Copper Foil or Copper Foil and form at the nickel plating porpezite that copper foil surface is formed, and utilizes etching method to form circuit structure on Copper Foil, and the thickness of described metallic circuit layer 24 is about 35 microns.
One deck brazing layer is formed on described metallic circuit layer 24 surface.Specifically, utilize plating, the mode of evaporation or vacuum splashing and plating forms described brazing layer on the surface of metallic circuit layer 24, described brazing layer is golden tin coating or NiPdAu coating.
Be welded in by heating element 25 to make heating element 25 be installed on metal ceramic composite substrate on described brazing layer, now, metallic circuit layer 24 is between ceramic layer 23 and heating element 25.In the present embodiment, heating element 25 is for having the Light-Emitting Diode of vertical electrode structure.
In the present embodiment, described heating element 25 is fixed on brazing layer by the mode adopting thermosonic bonding to connect.
In another embodiment, the mode of eutectic welding is adopted to be directly fixed on metallic circuit layer 24 by described heating element 25.
Embodiment three:
The difference of this execution mode and execution mode two is:
The heating element 35 of present embodiment is directly installed on ceramic layer 33, and namely this heating element 35 is arranged side by side to form a circuit layer on ceramic layer 33 with metallic circuit layer 34, therefore this ceramic layer 33 is between this circuit layer and cermet transition zone 32.Specifically, heat conductive silica gel or elargol is utilized heating element 35 to be bonded in ceramic layer 33 surface.
The heating element 35 of present embodiment is for having the Light-Emitting Diode of horizontal electrode structure.
Embodiment four:
The difference of this execution mode and execution mode three is only: comprise multiple heating element 45 be installed on ceramic layer 43 surface, and namely described heating element 45 to be arranged between multiple metallic circuit layer 44 and to be directly arranged on the surface deviating from cermet transition zone 42 of ceramic layer 43 with described metallic circuit layer 44.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a metal ceramic composite substrate, comprise metallic matrix, be arranged at the ceramic layer of the first surface of described metallic matrix and be arranged at the metallic circuit layer deviating from the surface of described metallic matrix of described ceramic layer, described ceramic layer is between described metallic matrix and described metallic circuit layer, it is characterized in that, also comprise by injecting that nitrogen is formed on the first surface of described metallic matrix and connecting the cermet transition zone of described ceramic layer, described cermet transition zone is that the mixture of metal and metal nitride is formed, wherein, part by weight shared by metal nitride is 20% ~ 80%, described ceramic layer is made up of ceramic membrane.
2. metal ceramic composite substrate as claimed in claim 1, it is characterized in that, described metallic matrix is made up of aluminium or aluminum alloy materials.
3. metal ceramic composite substrate as claimed in claim 2, it is characterized in that, described cermet transition zone is that the mixture of aluminium and aluminium nitride is formed, and the part by weight scope of described aluminium nitride is 20% ~ 80%, and the thickness range of described cermet transition zone is 1nm ~ 1000nm.
4. metal ceramic composite substrate as claimed in claim 1, it is characterized in that, described ceramic membrane is nitride film.
5. as the metal ceramic composite substrate in Claims 1-4 as described in any one, it is characterized in that, silver-plated or the copper foil layer that described metallic circuit layer is formed by copper foil layer, copper foil layer and the surface at described copper foil layer and the nickel plating porpezite formed on the surface of described copper foil layer are formed, and described copper foil layer is provided with the circuit structure formed by etching mode.
6. a manufacture method for metal ceramic composite substrate, is characterized in that, comprises the following steps:
Grind and the first surface of polishing metal matrix;
Utilize ion implantation to inject nitrogen at the first surface of described metallic matrix and also form the cermet transition zone be made up of metal and metal nitride, wherein, the part by weight shared by metal nitride is 20% ~ 80%;
CVD (Chemical Vapor Deposition) method is utilized to form on described cermet transition zone one surface the ceramic layer be made up of ceramic membrane; And
Metallic circuit layer is set on the surface deviating from described metallic matrix of described ceramic layer, to make described ceramic layer between described cermet transition zone and described metallic circuit layer.
7. the manufacture method of metal ceramic composite substrate as claimed in claim 6, it is characterized in that, described metallic matrix is made up of aluminium or aluminum alloy materials.
8. the manufacture method of metal ceramic composite substrate as claimed in claim 7, it is characterized in that, described cermet transition zone is that the mixture of aluminium and aluminium nitride is formed, the part by weight scope of described aluminium nitride is 20% ~ 80%, and the thickness range of described cermet transition zone is 1nm ~ 1000nm.
9. the manufacture method of metal ceramic composite substrate as claimed in claim 6, it is characterized in that, described ceramic membrane is nitride film.
10. as the manufacture method of the metal ceramic composite substrate in claim 6 to 9 as described in any one, it is characterized in that, the step arranging metallic circuit layer on the surface deviating from described metallic matrix of described ceramic layer comprises:
The surperficial pressing of described metallic matrix, sintering, plating, evaporation or vacuum splashing and plating one deck Copper Foil is deviated from described ceramic layer; And
The mode of mask etching is utilized to make circuit structure on described Copper Foil.
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| CN109788637A (en) * | 2018-10-23 | 2019-05-21 | 江西增孚新材料科技有限公司 | Ceramic circuit-board |
| CN110098154A (en) * | 2019-04-12 | 2019-08-06 | 深圳通感微电子有限公司 | Package substrate and production method |
| CN110252156B (en) * | 2019-07-09 | 2022-04-05 | 湖南中天元环境工程有限公司 | Metal composite ceramic membrane and preparation method thereof |
| CN110252157B (en) * | 2019-07-09 | 2022-04-05 | 湖南中天元环境工程有限公司 | Reinforced metal composite ceramic membrane and preparation method thereof |
| CN110557903A (en) * | 2019-09-05 | 2019-12-10 | 深圳市星河电路股份有限公司 | method for processing bonding value of ultrahigh gold wire of PCB |
| TWI792148B (en) * | 2021-01-08 | 2023-02-11 | 艾姆勒科技股份有限公司 | Heat dissipating substrate with sputtered layer |
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Address after: Buji street, Longgang District of Shenzhen city cloth Lan Road 518000 Guangdong province No. 135 Gan Li six road No. 9 Patentee after: Shenzhen Hoyol Opto Electronic Co., Ltd. Address before: 518000, Gan Li Science Park, 135 Shenzhen Road, Buji street, Longgang District, Guangdong, China Patentee before: Hongya Photoelectronics Co., Ltd., Shenzhen City |
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