CN109348649A - Heat sink composite material plating process and its product - Google Patents
Heat sink composite material plating process and its product Download PDFInfo
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- CN109348649A CN109348649A CN201811100388.7A CN201811100388A CN109348649A CN 109348649 A CN109348649 A CN 109348649A CN 201811100388 A CN201811100388 A CN 201811100388A CN 109348649 A CN109348649 A CN 109348649A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/385—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrochemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to heat sink composite material plating process and its products.Specifically, a method of binding force being electroplated to improve it for handling heat sink composite material substrate, the corrosion resistant metal substrate of metal oxide layer is had including providing;The first metal ion is injected on the surface of the corrosion resistant metal substrate by ion implanting to form ion implanting transition zone;And by be electroplated on the ion implanting transition zone the second metal ion of plating to form electroplated layer.In addition, additionally providing a kind of heat sink composite material of plating binding force enhancing, and it is embedded with the frequency PCB plate of the heat sink composite material.
Description
Technical field
The present invention relates to the heat sink encapsulation fields of integrated circuit, and more particularly to for handle heat sink composite material with
Improve its method and its product that binding force is electroplated.
Background technique
Since integrated circuit integrated level rapidly increases, more high integration and the faster speed of service will lead to chip calorific value
It steeply rises, so that the chip service life declines.It is reported that temperature is every to increase 18 DEG C, the semiconductor chip lost of life, failure will lead to
Possibility promotes 3 times.This is because in integrated circuit, high power device, storeroom heat dissipation performance is bad will lead to heat fatigue,
Thermal expansion coefficient (CTE) mismatches and causes caused by thermal stress.Therefore, solve the problems, such as that this key is to select suitably to seal
Fill heat sink material.
Traditional metal heat sink material has Cu, A1, Mo, W, Kovar(that can cut down), Invar etc., crucial thermal conductivity, CTE
(10-6/ k) and density (g/cm3) performance is as shown in following table 1-1.
The performance of table 1-1 conditional electronic encapsulating material
Material | Thermally conductive system (W/mk) | CTE(10-6/ k) | Density (g/cm3) |
Silicon | 150 | 4.1 | 2.3 |
Aluminium oxide | 20 | 6.7 | 3.9 |
AlN | 270 | 5.8 | 3.29 |
BeO | 210 | 8.0 | 2.86 |
Al | 230 | 23 | 2.7 |
Cu | 400 | 17 | 8.9 |
W | 174 | 4.5 | 19.3 |
Mo | 140 | 5.0 | 10.2 |
SiC | 270 | 5.0 | 3.21 |
Invar | 11 | 0.4 | 8.04 |
It can cut down | 17 | 5.9 | 8.3 |
Epoxy resin | 1.7 | 5.4 | 1.2 |
For single Cu or Al metal, though excellent thermal conductivity, can reach 200-400W/mk, the metal of Cu, A1
The CTE differential of thermal expansion coefficient CTE and Si are larger, and chip is caused to be easy heated stress influence and generate brittle crack.For list
One Mo or W metal, although thermal expansion coefficient is lower, heating conduction is much higher than alloy Invar and alloy Kovar, and intensity
Also high with hardness, application is more universal, but there are expensive, processing difficulties, solderability difference and density are big not by Mo and W
Foot.
Metallic composite (abbreviation MMC) is widely used as a result,.Metallic composite, such as Cu/W, Cu/Mo,
CIC(Cu/invar/Cu), CMC (Cu/Mo/Cu), Kovar/Cu/Kovar, Cu/Kovar and Cu/ steel/Cu etc. have excellent
Thermally conductive and low CTE performance, can substantially reduce production cost, be widely used in semiconductor packages, PCB core layer and lead frame etc.
Heat sink material field, especially high-power electronic device (such as rectifying tube, thyristor, power module, laser diode, microwave tube
Deng) and microelectronic component (such as computer CPU, dsp chip) in, and microwave communication, automatic control, power supply conversion, aviation
The fields such as space flight play an important role.
Currently, above-described composite material manufacture craft mainly has powder plating+roll compacting method, seeps molten method, galvanoplastic.Its
In, galvanoplastic manufacture craft is the simplest, without material void or consistency problem, it is not necessarily to large-scale roll compacting mechanical equipment, thus
Cost of investment is small.However, galvanoplastic are faced with such main problem, that is, to such as W, Mo, stainless steel these are corrosion-resistant
Metal base is electroplated, and the binding force of gained electroplated layer and metal base is smaller or is easy to fall off.
In addition, utilizing the material of " low bulk, high heat conductance and density are small " recently as the development of advanced composite material (ACM)
Material is used as reinforced phase such as high-modulus fiber C, fiber B, graphite, diamond, AlN, it is fabricated to increasing with Cu, Al, Mo, W
Strong type composite heat sink material.For example, for carbon fiber-metal reinforced composite material, though " thermal conductivity height, CTE and density are low ",
But there is also certain difficulties for its manufacturing technology, and main is also to show that carbon fiber and metallic matrix binding force be not strong.In addition, institute
It is also relatively high to obtain material price.
Therefore, it is necessary to a kind of methods of improved binding force for improving heat sink composite material matrix and electroplated layer.
Summary of the invention
For the problem above of the prior art, one of the objects of the present invention is to provide one kind for improving heat sink composite wood
Expect the method for the binding force of electroplated layer, and a kind of heat sink composite material is prepared by this method and is embedded with such heat sink
The frequency PCB plate of composite material.
Specifically, the invention discloses a kind of for handling heat sink composite material substrate to improve the side that binding force is electroplated in it
Method.This method comprises: providing the corrosion resistant metal substrate for having metal oxide layer;By ion implanting in corrosion resistant metal substrate
Surface on inject metal ion to form ion implanting transition zone;And by plating on ion implanting transition zone plating the
Two metal ions are to form electroplated layer.In one embodiment, metal ion is injected on the surface oxide layer of metal base.
Original oxide layer is covered as a result, and microcosmic surface occurs with it and is reacted, to form the ion implanting transition of high-bond
Layer.Optionally, corrosion resistant metal substrate includes W, Mo, alloy Kovar, alloy Invar etc..In one embodiment, this method
It further include injecting then to carry out another metal of ion implanting after metal ion again on metal base by ion implanting
Ion.Optionally, metal ion includes Ni, Cu etc..In another embodiment, different from the corrosion-resistant gold with metal oxide layer
Belong to substrate, provides " low bulk, high heat conductance and density are small " of fiber C, fiber B, graphite, diamond, AlN etc.
Substrate.
On the other hand, the present invention provides a kind of heat sink composite materials of plating binding force enhancing.The heat sink composite material
Ion implanting transition zone including substrate, electroplated layer, and between substrate and electroplated layer.In one embodiment, substrate
For the corrosion resistant metal substrate being made of W, Mo, alloy Kovar, alloy Invar etc..The surface of corrosion resistant metal substrate due to
The chemical passivation of material acts on, and there is substrate itself metal oxide layer to influence plating conductive and binding force.Wherein, metal ion
It is injected on metal oxide layer and is covered and form ion implanting transition zone, to improve plating conductive and binding force.
In another embodiment, substrate is to be made of fiber C, fiber B, graphite, diamond, AlN etc..Optionally, ion implanting transition
Layer includes Ni, Cu, Ni+Cu.In one embodiment, heat sink composite material further includes the Cu being formed on ion implanting transition zone
Ion deposition transition zone.Optionally, single coating or Ni+Au, Ni+Cu of the electroplated layer for example including Cu, Ni, Au, Pd, Ag etc.,
Double coating of Ni+Pd, Ni+Ag etc..
Another aspect, the present invention also provides a kind of frequency PCB plates, are embedded with heat sink composite material according to the present invention.It is high
Frequency pcb board includes core material and external copper layer, and the substrate between core material and external copper layer for insulation is arranged in
Such as the low DK(dielectric constant of high frequency) organic resin material.Core material is made of two or more layers, between the layers equally
Ground is provided with the low DK organic resin material of insulating substrate such as high frequency.Organic resin material is for example including in PTFE, LCP, PPE
It is one or more.Optionally, frequency PCB plate is also provided with the plated through-hole of the conducting upper and lower outer layer of pcb board.Heat sink composite material
It is embedded in frequency PCB plate and is spaced apart with plated through-hole.The heat sink composite material in turn includes substrate, ion implanting from inside to outside
Transition zone and copper electroplating layer.Similar to the upper and lower layers of copper in outside of core material, the copper electroplating layer of heat sink composite material is by palm fibre
Change processing.
For the above method embodiment variations and modifications within the scope and spirit of this invention, and can herein into
The description of one step.
Detailed description of the invention
It is specifically described the present invention below with reference to attached drawing and in conjunction with example, advantages of the present invention and implementation will
It is more obvious, wherein content only for the purpose of explanation of the present invention shown in attached drawing, without constitute to it is of the invention in all senses
On limitation, attached drawing is only illustrative, not strictly drawn to scale.In the accompanying drawings:
Fig. 1 is the process according to the present invention that its method that binding force is electroplated is improved for handling heat sink composite material substrate
Figure;
Fig. 2 is the heat sink composite material with single side ion implanting transition zone according to the method for the present invention;
Fig. 3 is the heat sink composite material with two-sided ion implanting transition zone according to the method for the present invention;
Fig. 4 is the operation principle schematic diagram of ion implanting according to the present invention;And
Fig. 5 is the frequency PCB plate according to the present invention for being embedded with heat sink composite material.
Specific embodiment
Now will be in detail referring to the embodiment of the present invention, one or more of examples are shown in the accompanying drawings.Each example
It is and to be not intended to limit the present invention to illustrate that mode of the invention provides.In fact, it will be apparent to those skilled in the art that
It without departing from the scope or spirit of the invention, can various modifications and variations can be made in the present invention.For example, be shown as or
The feature for being described as a part of one embodiment can be used with another embodiment, to generate another embodiment.Therefore,
It is desirable that, the present invention includes these modifications and variations being included within the scope of appended claims and its equivalent program.
In practice, it is electroplated on the corrosion resistant metal substrate of W, Mo, stainless steel etc., gained electroplated layer and substrate
Binding force is smaller or is easy to fall off.Inventor is the study found that the main reason for causing such phenomenon is corrosion resistant metal substrate
The oxide layer on surface is difficult to handle, to influence plating conductive, electroplated layer crystallization is difficult to incorporate the gold of corrosion resistant metal substrate
Belong to lattice, and then electroplated layer is caused to be easily peeled off.Currently, for the oxide layer of corrosion resistant metal substrate surface, industry is mainly adopted
It is handled with the modes such as hydrogen+high temperature, organic oil removing+nitric acid or hydrofluoric acid treatment, grinding, practical removal effect it is to be difficult to
It is satisfied.
Different from conventional chemically or physically processing method, the present invention is expressly mechanical not before plating to remove corrosion resistant
Lose the oxide layer of metallic substrate surface.According to one embodiment of present invention, as shown in Figure 1, providing a kind of for locating
Reason heat sink composite material substrate is to improve the method that binding force is electroplated in it.Firstly, providing corrosion resistant metal base according to step S11
Material significantly has oxide layer on the surface of the metal base.As an example, corrosion resistant metal substrate for example including W, Mo,
Alloy Kovar, alloy Invar etc..Then, in step s 12, metal is injected on the surface of metal base by ion implanting
Ion is to form " ion implanting transition zone ".In the process, the metal ion of high energy directly hits substrate with very high speed
Surface, and be injected into the surface oxide layer of substrate or even below within the scope of the certain depth of material main body (such as 1-
100nm, such as 5nm, 10nm, 20nm, 50nm).In the surface oxide layer or its ontology material of the metal ion and substrate injected
Chemical bond or interstitial structure are formd between material molecule, to form doped structure to help to improve and the combination of material main body
Power.In an embodiment according to the present invention, metal ion is for example including Ni, Cu etc..In another embodiment in accordance with the invention,
Step S12 further includes injecting after metal ion such as Ni ion then to carry out again on metal base by ion implanting
Another metal ion of ion implanting such as Cu ion, to form " Ni+Cu ion implanting transition zone ".Finally, in step S13
In, by be electroplated on ion implanting transition zone the second metal ion of plating to form electroplated layer.In implementation according to the present invention
In example, electroplated layer is for example including the double of single coating of Cu, Ni, Au, Pd, Ag etc. or Ni+Au, Ni+Cu, Ni+Pd, Ni+Ag etc.
Coating.
Preferably, before ion implanting, corrosion resistant metal substrate usually requires to carry out pre-treatment.Side as pre-treatment
Method may include surface cleaning processing, for example, being adhered to above with removing with the surface for the gauze wipe substrate for impregnating alcohol
It is dirty, or substrate is put into cleaning solution and clean using ultrasonic wave, etc..In addition, pre-treatment may also include surface
Deposition processes and/or surface dewatering processing.Surface deposition processes are exactly to be covered with a surface sediments on the surface of substrate, to fill and lead up base
Hole on material surface improves the physical property of substrate surface in order to the progress of the techniques such as subsequent deposition, plating.Surface is de-
Water process is exactly the moisture removed in substrate surface molecule, to be conducive to the progress of subsequent technique.
In the method according to the invention, the oxide layer of corrosion resistant metal substrate surface is without removing.On the contrary, by adopting
The mode injected with ion implanting or vacuum ionic, the metal ion of high-energy are injected into the surface oxide layer of metal base
On.Original oxide layer is covered as a result, and microcosmic surface occurs with it and is reacted, to form the ion implanting mistake of high-bond
Cross layer.
In general, ion implanting may include the processing of Hall source, source metal processing, Magnetic filter processing etc..It optionally, can be in substrate
Upper surface, lower surface or the two simultaneously carry out ion implanting to form respective ion implanting transition zone.For example, Fig. 2 and
Fig. 3 respectively shows obtained heat sink compound with single side and two-sided ion implanting transition zone according to the method for the present invention
Material.As shown, heat sink composite material 1 includes substrate 2, ion implanting transition zone 3 and electroplated layer 4.In Fig. 2, only exist
Ion implanting transition zone 3 is provided on the upper surface of substrate 2, and electroplated layer 4 is then located at the outer surface of ion implanting transition zone 3
On.Similarly, in fig. 3 it is shown that be respectively formed in the upper and lower surfaces of substrate 2 ion implanting transition zone 3 with
And the electroplated layer 4 on the outer surface of ion implanting transition zone 3 is set.Experiments have shown that for such single side and/or Double-side hot
The binding force of heavy composite material, composite base material and outer layer electro-coppering is good, after removing oxide layer much higher than Typical physical or chemistry
Composite base material and electroplated layer between the situation that combines.
Fig. 4 is the operation principle schematic diagram of ion implanting according to the present invention.As shown in figure 4, in ion implantation process,
High voltage electric field carries out arc discharge on the surface of metallic cathode target, to form electric arc spot.Target material surface at electric arc spot
Metallic by ionization, and be detached from target material surface.Then, the metallic of ionization is 1-1000kV by voltage
Accelerating field effect, obtain range in the energy of 1-1000keV, become high-velocity particles.These are by the high speed of electric field acceleration
Particle is then injected at the certain depth inside substrate, forms ion implanted layer.
In a specific embodiment, ion implanting is realized by the following method.Firstly, selecting conductive material as target
Material generates target ionization by arcing under vacuum conditions using metallic vapour vacuum arc ion source (MEVVA)
Metal ion.Then, accelerate the ion under the electric field of high voltage and obtain very high energy (such as 5-1000keV, such as
10keV, 50keV, 100keV, 200keV, 500keV etc.).Then, the metal ion of high energy directly hits base with very high speed
Material surface, and be injected into the certain depth bounds of lower face (such as 1-100nm, such as 5nm, 10nm, 20nm, 50nm
Deng).Chemical bond or interstitial structure are formd between the material molecule of the metal ion and substrate that are injected, to form doping
Structure.The outer surface of thus obtained ion implanted layer and the outer surface on substrate surface layer are flush, and its inner surface is then deep into
The inside on substrate surface layer.For example, ion implanted layer is located at the depth of 1-100nm (such as 5-50nm) below substrate surface.This
When, the exterior portion on substrate surface layer is configured to a part of diffusion barrier layer due to being formed with ion implanted layer.
During ion implanting, the metal ion of target is forcibly injected into the inside of substrate with very high speed, with base
Doped structure is formed between material, the lower face being equivalent in substrate forms large number of foundation pile.Due to the presence of foundation pile,
And subsequent extra play obtained is connected with foundation pile, thus the binding force between final coating layer obtained and substrate is also higher.Separately
It outside,, can by controlling various relevant parameters, such as Injection Current, injecting voltage, implantation dosage etc. in ion implantation process
Depth inside surface layer is entered to adjust ion implanted layer, that is, the inner surface of ion implanted layer institute below substrate surface
The depth at place.In a preferred embodiment, the energy for injecting ion is 5-1000keV, and implantation dosage is 1.0 × 1012-
1.0×1018ions/cm2(preferably, implantation dosage is 1.0 × 1015-5.0×1016ions/cm2), to make ion implanted layer
Inner surface be located at the depth of 5-50nm below substrate surface.
According to the present invention, it by using ion implanting to the corrosion resistant metal substrate surface with oxide layer, effectively keeps away
Exempt from influence of the surface oxide layer to interface binding power of metal base.Meanwhile by using ion implanting, also shape to metal base
The binding force of subsequent electroplated layer and substrate is improved at the ion implanting transition zone of easy plating, thus most possibly with it is low at
This mode realizes the manufacture craft of composite heat sink material and the key performance of " low CTE, high heat conductance, density are small ".
As described above, it is injected by using vacuum ionic, by the metal ion of high-energy such as Ni ion implanting to gold
On the surface oxide layer for belonging to substrate.Original oxide layer is covered as a result, and microcosmic surface occurs with it and is reacted, to form height
The Ni ion implanting transition zone of binding force.Here, when vacuum arc discharge can also generate many rulers while generating charged ion
The very little not charged particle at 0.1-10 μm.The presence of these particles has great shadow to the performance of institute's deposition film or implanted layer
It rings, causes film or implanted layer rough surface, compactness is poor, glossiness and declines etc. with the binding force of substrate.In order to remove or
Reduce cathode vacuum arc generate bulky grain, magnetic filter can be used, that is, establish a curved magnetic field, filter out without
The charged ion of needs, is only directed to the surface of substrate by the bulky grain of electricity along curved magnetic field.It is according to the present invention as a result,
Another embodiment carries out Magnetic filter deposition Cu ion again after forming Ni ion implanting transition zone to form Cu ion deposition mistake
Cross layer.Then, surface conductivity, wellability and the roughness of metal base are further increased, thus in subsequent metal base
During the electro-coppering on material surface, the binding force of composite base material and electro-coppering is improved.In addition, ion implanting and plating not only may be used
It is made of chip, and roll-to-roll production can be carried out to banding substrate.
According to the present invention, it provides not only a kind of for improving the heat sink composite material matrix and electricity that have metal oxide layer
The method of the binding force of coating, and therefore production obtains a kind of heat sink metallic composite of plating binding force enhancing, packet
Include substrate, ion implanting transition zone and electroplated layer.Wherein,
Substrate: for example including W, Mo, alloy Kovar, alloy Invar etc.;
Ion implanting transition zone: for example including Ni, Cu, Ni+Cu;And
Electroplated layer: for example including the double of single coating of Cu, Ni, Au, Pd, Ag etc. or Ni+Au, Ni+Cu, Ni+Pd, Ni+Ag etc.
Coating.
Additionally, it is well known that carbon fiber has high-intensitive and modulus, good conductive, thermally conductive and wear-resisting property, as one
Kind new function material has a extensive future.However, carbon fiber and copper are nonwetting in liquid/solid, also do not react, thus causes
Carbon fiber dispersibility and binding force in Copper substrate is poor.In general, the method for solving such technical problem is in carbon fiber surface
One layer of metal is coated to improve the wetability of carbon fiber and copper liquid, to improve the interface bond strength of composite material.For example, common
Solution have vapor deposition, chemical plating, plating etc..Wherein, galvanoplastic refer to one layer of copper of plating, technique on carbon fiber
Simply, easy to operate, it is a kind of side of improvement " wettability difference material (such as carbon fiber, graphite) " surface characteristic got a good chance of
Method.It is noted that for improving wettability, key is to improve the interface binding power of C/Cu.Currently, have been reported that by using
Air thermal oxide increases the roughness and wellability of carbon fiber, to be conducive to improve the interface binding power of C/Cu, but practical
The effect is unsatisfactory, there is a problem of that processing is uneven, binding force stability is poor.
Although not having reluctant gold on the substrate surface of fiber C, fiber B, graphite, diamond, AlN etc.
Belong to oxide layer, but inventor arrives the metal ion implantation of high-energy the study found that likewise by using vacuum ionic injection
On substrate surface, ion implanting transition zone is consequently formed to improve the interface binding power between substrate and coating layer.Below, have
Body is described in detail by taking carbon fiber as an example.For example, in one embodiment, being injected by vacuum ionic, by high-energy metal
Ion such as Ni ion implanting forms the Ni ion implanting transition zone of high-bond on the surface of carbon fiber base material.Further, right
Ni ion implanting transition zone continues Magnetic filter deposition Cu ion and forms Cu ion deposition transition zone.Carbon is improved as a result,
The wellability and roughness of fibrous substrate surface, thus during the electro-coppering of subsequent substrate surface, improve carbon fiber and
The binding force of electro-coppering, thus to obtain " carbon fiber+copper " composite filament of high quality.Finally, the composite filament passes through subsequent " liquid phase
Copper infusion process " can prepare copper-carbon fibre composite.Liquid phase copper and the wetability of copper facing composite filament are preferable as a result, fiber and
Copper interface does not lead to the problem of cavity or disengages, and is well combined.
On the other hand, with the development of 5G technology, the application demand of high-frequency circuit board is further extensive, and to its heat dissipation performance
Requirement it is also further stringent.According to the present invention, a kind of novel high-frequency pcb board is additionally provided, is buried wherein or embedded with according to this hair
Bright heat sink composite material obtained.As shown in figure 5, frequency PCB plate 10 includes core material 13 and external copper layer 11, and setting
The low DK(dielectric constant of substrate such as high frequency between core material 13 and external copper layer 11 for insulation) organic resin material
12.Core material 13 is made of two or more layers, and being similarly provided with the low DK of insulating substrate such as high frequency between the layers has
Machine resin material 12.Organic resin material 12 is for example including one of PTFE, LCP, PPE or a variety of.Optionally, frequency PCB
Plate 10 is also provided with one or more through-holes.Metalized is carried out in the inside of through-hole, thus formed on conducting pcb board 10,
The plated through-hole 14 of lower outer layer.Specifically, it inside the substrate of frequency PCB plate 10, is also embedded with according to the present invention heat sink compound
Material 15.As shown, heat sink composite material 15 is embedded in frequency PCB plate 10 through organic resin material 12 and plated through-hole
14 are spaced apart.The heat sink composite material in turn includes substrate, ion implanting transition zone and copper electroplating layer from inside to outside.It is similar
In the upper and lower layers of copper in the outside of core material 13, the copper electroplating layer of heat sink composite material 15 also passes through brownification processing.That is, in copper
Binding force when the Surface Creation layer of oxide layer of layer is to be lifted at pressing between layers of copper and the substrate of resin material etc..
According to the present invention, the outer layer for being embedded with the frequency PCB plate of heat sink composite material is layers of copper, this facilitates routinely PCB
Process carries out brownification processing to layers of copper, and guarantees the binding force of circuit board when with the base material pressings such as such as PP.In addition, test
Show heat sink composite material according to the present invention, be resistant to by 260-280 °C of Reflow Soldering or wicking 3 seconds, 5 seconds, 10 seconds,
20 seconds or longer thermal shock, and pass through bending experiment, layers of copper and the not stratified blistering of substrate.It is resulting compared with the prior art
Heat sink composite material handles resulting heat sink composite material satisfaction to the height of circuit board high frequency and heat dissipation according to the method for the present invention
Performance requirement;Heat caused by local high performance components or component compact district can be oriented to rapidly entire printed board, made
Heat dissipation area increases, and it is excessively high and lead to that electric property deteriorates or high frequency performance is impacted to be not local temperature rise;When necessary may be used
It buries heat sink composite material using interior and is connected with casing, make heat guiding casing and make heat dissipation more preferably.In addition, multi-layer PCB board is logical
It crosses and buries heat sink composite material using in low CTE, the thermal expansion coefficient of multilayer circuit board may make to substantially reduce, be preferably applicable in
High, high integration the electronic product in wiring density.
This written explanation has used the example including optimal mode to disclose the present invention, and also makes those skilled in the art
It can implement the present invention, including make and use any device or system, and execute any method combined.The present invention can
The range for obtaining patent is defined by the claims, and may include the contemplated other examples out of those skilled in the art.If
These other examples, which have, has no different structural details, or if these other examples from the written language of claim
Equivalent constructions element including the written language with claim without essence difference, then it is assumed that these examples are in claim
Within the scope of.
Claims (16)
1. a kind of method for handling heat sink composite material substrate to improve its plating binding force, comprising:
The corrosion resistant metal substrate for having metal oxide layer is provided;
The first metal ion is injected on the surface of the corrosion resistant metal substrate by ion implanting to form ion implanting mistake
Cross layer;And
By be electroplated on the ion implanting transition zone the second metal ion of plating to form electroplated layer.
2. the method according to claim 1, wherein first metal ion is injected into the metal oxidation
On layer and the metal oxide layer is covered to form the ion implanting transition zone.
3. the method according to claim 1, wherein the corrosion resistant metal substrate includes W, Mo, alloy Kovar
Or alloy Invar.
4. the method according to claim 1, wherein the method also includes forming the ion implanting transition
During layer, another metal ion of ion implanting is then carried out again after the first metal ion described in ion implanting.
5. the method according to claim 1, wherein the method also includes forming the ion implanting transition
Magnetic filter deposition Cu ion is carried out after layer again to form Cu ion deposition transition zone.
6. the method according to claim 1, wherein first metal ion and the second metal ion wrap respectively
Include Ni or Cu.
7. a kind of method for handling heat sink composite material substrate to improve its plating binding force, comprising:
Substrate is provided, the substrate includes fiber C, fiber B, graphite, diamond or AlN;
Inject the first metal ion on the surface of the substrate by ion implanting to form ion implanting transition zone;And
By be electroplated on the ion implanting transition zone the second metal ion of plating to form electroplated layer.
8. the method according to the description of claim 7 is characterized in that the method also includes the first metals described in ion implanting
Then another metal ion of ion implanting is carried out after ion again.
9. the method according to the description of claim 7 is characterized in that the method also includes forming the ion implanting transition
Magnetic filter deposition Cu ion is carried out after layer again to form Cu ion deposition transition zone.
10. a kind of heat sink composite material of plating binding force enhancing, including substrate, electroplated layer, and between the substrate and institute
State the ion implanting transition zone between electroplated layer.
11. heat sink composite material according to claim 10, which is characterized in that having on the surface of the substrate influences
The surface of the metal oxide layer of electroplated layer binding force or the substrate and the binding force of the electroplated layer are poor, wherein the ion
Implanting transition layer and the metal oxide layer adulterate and cover the metal oxide layer.
12. heat sink composite material according to claim 10, which is characterized in that the substrate is by fiber C, fiber B, stone
Ink, diamond or AlN are constituted.
13. heat sink composite material according to claim 10, which is characterized in that the ion implanting transition zone include Ni,
Cu or their combination.
14. heat sink composite material according to claim 10, which is characterized in that the heat sink composite material further includes being formed
Cu ion deposition transition zone on the ion implanting transition zone.
15. heat sink composite material according to claim 10, which is characterized in that the electroplated layer include by Cu, Ni, Au,
Single coating that Pd or Ag is constituted, or include the double coating being made of one of Au, Cu, Pd or Ag and Ni.
16. a kind of frequency PCB plate, is embedded with heat sink composite material described in any one of 0-15 according to claim 1.
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Cited By (3)
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CN111394695A (en) * | 2020-04-10 | 2020-07-10 | 扬州工业职业技术学院 | Method for plating palladium on surface of steel strip |
WO2021143381A1 (en) * | 2020-01-16 | 2021-07-22 | 武汉光谷创元电子有限公司 | Method for manufacturing three-dimensional circuit and electronic element |
CN113529040A (en) * | 2020-07-06 | 2021-10-22 | 深圳市海维通光电技术有限公司 | Carbon material surface treatment method |
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CN103079339A (en) * | 2013-01-28 | 2013-05-01 | 深圳市泓亚光电子有限公司 | Metal ceramic composite substrate and manufacturing method for same |
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Cited By (4)
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WO2021143381A1 (en) * | 2020-01-16 | 2021-07-22 | 武汉光谷创元电子有限公司 | Method for manufacturing three-dimensional circuit and electronic element |
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