CN109348649A - Heat sink composite material plating process and its product - Google Patents

Heat sink composite material plating process and its product Download PDF

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Publication number
CN109348649A
CN109348649A CN201811100388.7A CN201811100388A CN109348649A CN 109348649 A CN109348649 A CN 109348649A CN 201811100388 A CN201811100388 A CN 201811100388A CN 109348649 A CN109348649 A CN 109348649A
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Prior art keywords
ion
substrate
heat sink
ion implanting
layer
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Inventor
张志强
杨志刚
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Wuhan Optical Valley Chuan Yuan Electronics Co Ltd
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Wuhan Optical Valley Chuan Yuan Electronics Co Ltd
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Priority to CN201811100388.7A priority Critical patent/CN109348649A/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/385Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48Ion implantation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34Pretreatment of metallic surfaces to be electroplated

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention relates to heat sink composite material plating process and its products.Specifically, a method of binding force being electroplated to improve it for handling heat sink composite material substrate, the corrosion resistant metal substrate of metal oxide layer is had including providing;The first metal ion is injected on the surface of the corrosion resistant metal substrate by ion implanting to form ion implanting transition zone;And by be electroplated on the ion implanting transition zone the second metal ion of plating to form electroplated layer.In addition, additionally providing a kind of heat sink composite material of plating binding force enhancing, and it is embedded with the frequency PCB plate of the heat sink composite material.

Description

Heat sink composite material plating process and its product
Technical field
The present invention relates to the heat sink encapsulation fields of integrated circuit, and more particularly to for handle heat sink composite material with Improve its method and its product that binding force is electroplated.
Background technique
Since integrated circuit integrated level rapidly increases, more high integration and the faster speed of service will lead to chip calorific value It steeply rises, so that the chip service life declines.It is reported that temperature is every to increase 18 DEG C, the semiconductor chip lost of life, failure will lead to Possibility promotes 3 times.This is because in integrated circuit, high power device, storeroom heat dissipation performance is bad will lead to heat fatigue, Thermal expansion coefficient (CTE) mismatches and causes caused by thermal stress.Therefore, solve the problems, such as that this key is to select suitably to seal Fill heat sink material.
Traditional metal heat sink material has Cu, A1, Mo, W, Kovar(that can cut down), Invar etc., crucial thermal conductivity, CTE (10-6/ k) and density (g/cm3) performance is as shown in following table 1-1.
The performance of table 1-1 conditional electronic encapsulating material
Material Thermally conductive system (W/mk) CTE(10-6/ k) Density (g/cm3)
Silicon 150 4.1 2.3
Aluminium oxide 20 6.7 3.9
AlN 270 5.8 3.29
BeO 210 8.0 2.86
Al 230 23 2.7
Cu 400 17 8.9
W 174 4.5 19.3
Mo 140 5.0 10.2
SiC 270 5.0 3.21
Invar 11 0.4 8.04
It can cut down 17 5.9 8.3
Epoxy resin 1.7 5.4 1.2
For single Cu or Al metal, though excellent thermal conductivity, can reach 200-400W/mk, the metal of Cu, A1 The CTE differential of thermal expansion coefficient CTE and Si are larger, and chip is caused to be easy heated stress influence and generate brittle crack.For list One Mo or W metal, although thermal expansion coefficient is lower, heating conduction is much higher than alloy Invar and alloy Kovar, and intensity Also high with hardness, application is more universal, but there are expensive, processing difficulties, solderability difference and density are big not by Mo and W Foot.
Metallic composite (abbreviation MMC) is widely used as a result,.Metallic composite, such as Cu/W, Cu/Mo, CIC(Cu/invar/Cu), CMC (Cu/Mo/Cu), Kovar/Cu/Kovar, Cu/Kovar and Cu/ steel/Cu etc. have excellent Thermally conductive and low CTE performance, can substantially reduce production cost, be widely used in semiconductor packages, PCB core layer and lead frame etc. Heat sink material field, especially high-power electronic device (such as rectifying tube, thyristor, power module, laser diode, microwave tube Deng) and microelectronic component (such as computer CPU, dsp chip) in, and microwave communication, automatic control, power supply conversion, aviation The fields such as space flight play an important role.
Currently, above-described composite material manufacture craft mainly has powder plating+roll compacting method, seeps molten method, galvanoplastic.Its In, galvanoplastic manufacture craft is the simplest, without material void or consistency problem, it is not necessarily to large-scale roll compacting mechanical equipment, thus Cost of investment is small.However, galvanoplastic are faced with such main problem, that is, to such as W, Mo, stainless steel these are corrosion-resistant Metal base is electroplated, and the binding force of gained electroplated layer and metal base is smaller or is easy to fall off.
In addition, utilizing the material of " low bulk, high heat conductance and density are small " recently as the development of advanced composite material (ACM) Material is used as reinforced phase such as high-modulus fiber C, fiber B, graphite, diamond, AlN, it is fabricated to increasing with Cu, Al, Mo, W Strong type composite heat sink material.For example, for carbon fiber-metal reinforced composite material, though " thermal conductivity height, CTE and density are low ", But there is also certain difficulties for its manufacturing technology, and main is also to show that carbon fiber and metallic matrix binding force be not strong.In addition, institute It is also relatively high to obtain material price.
Therefore, it is necessary to a kind of methods of improved binding force for improving heat sink composite material matrix and electroplated layer.
Summary of the invention
For the problem above of the prior art, one of the objects of the present invention is to provide one kind for improving heat sink composite wood Expect the method for the binding force of electroplated layer, and a kind of heat sink composite material is prepared by this method and is embedded with such heat sink The frequency PCB plate of composite material.
Specifically, the invention discloses a kind of for handling heat sink composite material substrate to improve the side that binding force is electroplated in it Method.This method comprises: providing the corrosion resistant metal substrate for having metal oxide layer;By ion implanting in corrosion resistant metal substrate Surface on inject metal ion to form ion implanting transition zone;And by plating on ion implanting transition zone plating the Two metal ions are to form electroplated layer.In one embodiment, metal ion is injected on the surface oxide layer of metal base. Original oxide layer is covered as a result, and microcosmic surface occurs with it and is reacted, to form the ion implanting transition of high-bond Layer.Optionally, corrosion resistant metal substrate includes W, Mo, alloy Kovar, alloy Invar etc..In one embodiment, this method It further include injecting then to carry out another metal of ion implanting after metal ion again on metal base by ion implanting Ion.Optionally, metal ion includes Ni, Cu etc..In another embodiment, different from the corrosion-resistant gold with metal oxide layer Belong to substrate, provides " low bulk, high heat conductance and density are small " of fiber C, fiber B, graphite, diamond, AlN etc. Substrate.
On the other hand, the present invention provides a kind of heat sink composite materials of plating binding force enhancing.The heat sink composite material Ion implanting transition zone including substrate, electroplated layer, and between substrate and electroplated layer.In one embodiment, substrate For the corrosion resistant metal substrate being made of W, Mo, alloy Kovar, alloy Invar etc..The surface of corrosion resistant metal substrate due to The chemical passivation of material acts on, and there is substrate itself metal oxide layer to influence plating conductive and binding force.Wherein, metal ion It is injected on metal oxide layer and is covered and form ion implanting transition zone, to improve plating conductive and binding force. In another embodiment, substrate is to be made of fiber C, fiber B, graphite, diamond, AlN etc..Optionally, ion implanting transition Layer includes Ni, Cu, Ni+Cu.In one embodiment, heat sink composite material further includes the Cu being formed on ion implanting transition zone Ion deposition transition zone.Optionally, single coating or Ni+Au, Ni+Cu of the electroplated layer for example including Cu, Ni, Au, Pd, Ag etc., Double coating of Ni+Pd, Ni+Ag etc..
Another aspect, the present invention also provides a kind of frequency PCB plates, are embedded with heat sink composite material according to the present invention.It is high Frequency pcb board includes core material and external copper layer, and the substrate between core material and external copper layer for insulation is arranged in Such as the low DK(dielectric constant of high frequency) organic resin material.Core material is made of two or more layers, between the layers equally Ground is provided with the low DK organic resin material of insulating substrate such as high frequency.Organic resin material is for example including in PTFE, LCP, PPE It is one or more.Optionally, frequency PCB plate is also provided with the plated through-hole of the conducting upper and lower outer layer of pcb board.Heat sink composite material It is embedded in frequency PCB plate and is spaced apart with plated through-hole.The heat sink composite material in turn includes substrate, ion implanting from inside to outside Transition zone and copper electroplating layer.Similar to the upper and lower layers of copper in outside of core material, the copper electroplating layer of heat sink composite material is by palm fibre Change processing.
For the above method embodiment variations and modifications within the scope and spirit of this invention, and can herein into The description of one step.
Detailed description of the invention
It is specifically described the present invention below with reference to attached drawing and in conjunction with example, advantages of the present invention and implementation will It is more obvious, wherein content only for the purpose of explanation of the present invention shown in attached drawing, without constitute to it is of the invention in all senses On limitation, attached drawing is only illustrative, not strictly drawn to scale.In the accompanying drawings:
Fig. 1 is the process according to the present invention that its method that binding force is electroplated is improved for handling heat sink composite material substrate Figure;
Fig. 2 is the heat sink composite material with single side ion implanting transition zone according to the method for the present invention;
Fig. 3 is the heat sink composite material with two-sided ion implanting transition zone according to the method for the present invention;
Fig. 4 is the operation principle schematic diagram of ion implanting according to the present invention;And
Fig. 5 is the frequency PCB plate according to the present invention for being embedded with heat sink composite material.
Specific embodiment
Now will be in detail referring to the embodiment of the present invention, one or more of examples are shown in the accompanying drawings.Each example It is and to be not intended to limit the present invention to illustrate that mode of the invention provides.In fact, it will be apparent to those skilled in the art that It without departing from the scope or spirit of the invention, can various modifications and variations can be made in the present invention.For example, be shown as or The feature for being described as a part of one embodiment can be used with another embodiment, to generate another embodiment.Therefore, It is desirable that, the present invention includes these modifications and variations being included within the scope of appended claims and its equivalent program.
In practice, it is electroplated on the corrosion resistant metal substrate of W, Mo, stainless steel etc., gained electroplated layer and substrate Binding force is smaller or is easy to fall off.Inventor is the study found that the main reason for causing such phenomenon is corrosion resistant metal substrate The oxide layer on surface is difficult to handle, to influence plating conductive, electroplated layer crystallization is difficult to incorporate the gold of corrosion resistant metal substrate Belong to lattice, and then electroplated layer is caused to be easily peeled off.Currently, for the oxide layer of corrosion resistant metal substrate surface, industry is mainly adopted It is handled with the modes such as hydrogen+high temperature, organic oil removing+nitric acid or hydrofluoric acid treatment, grinding, practical removal effect it is to be difficult to It is satisfied.
Different from conventional chemically or physically processing method, the present invention is expressly mechanical not before plating to remove corrosion resistant Lose the oxide layer of metallic substrate surface.According to one embodiment of present invention, as shown in Figure 1, providing a kind of for locating Reason heat sink composite material substrate is to improve the method that binding force is electroplated in it.Firstly, providing corrosion resistant metal base according to step S11 Material significantly has oxide layer on the surface of the metal base.As an example, corrosion resistant metal substrate for example including W, Mo, Alloy Kovar, alloy Invar etc..Then, in step s 12, metal is injected on the surface of metal base by ion implanting Ion is to form " ion implanting transition zone ".In the process, the metal ion of high energy directly hits substrate with very high speed Surface, and be injected into the surface oxide layer of substrate or even below within the scope of the certain depth of material main body (such as 1- 100nm, such as 5nm, 10nm, 20nm, 50nm).In the surface oxide layer or its ontology material of the metal ion and substrate injected Chemical bond or interstitial structure are formd between material molecule, to form doped structure to help to improve and the combination of material main body Power.In an embodiment according to the present invention, metal ion is for example including Ni, Cu etc..In another embodiment in accordance with the invention, Step S12 further includes injecting after metal ion such as Ni ion then to carry out again on metal base by ion implanting Another metal ion of ion implanting such as Cu ion, to form " Ni+Cu ion implanting transition zone ".Finally, in step S13 In, by be electroplated on ion implanting transition zone the second metal ion of plating to form electroplated layer.In implementation according to the present invention In example, electroplated layer is for example including the double of single coating of Cu, Ni, Au, Pd, Ag etc. or Ni+Au, Ni+Cu, Ni+Pd, Ni+Ag etc. Coating.
Preferably, before ion implanting, corrosion resistant metal substrate usually requires to carry out pre-treatment.Side as pre-treatment Method may include surface cleaning processing, for example, being adhered to above with removing with the surface for the gauze wipe substrate for impregnating alcohol It is dirty, or substrate is put into cleaning solution and clean using ultrasonic wave, etc..In addition, pre-treatment may also include surface Deposition processes and/or surface dewatering processing.Surface deposition processes are exactly to be covered with a surface sediments on the surface of substrate, to fill and lead up base Hole on material surface improves the physical property of substrate surface in order to the progress of the techniques such as subsequent deposition, plating.Surface is de- Water process is exactly the moisture removed in substrate surface molecule, to be conducive to the progress of subsequent technique.
In the method according to the invention, the oxide layer of corrosion resistant metal substrate surface is without removing.On the contrary, by adopting The mode injected with ion implanting or vacuum ionic, the metal ion of high-energy are injected into the surface oxide layer of metal base On.Original oxide layer is covered as a result, and microcosmic surface occurs with it and is reacted, to form the ion implanting mistake of high-bond Cross layer.
In general, ion implanting may include the processing of Hall source, source metal processing, Magnetic filter processing etc..It optionally, can be in substrate Upper surface, lower surface or the two simultaneously carry out ion implanting to form respective ion implanting transition zone.For example, Fig. 2 and Fig. 3 respectively shows obtained heat sink compound with single side and two-sided ion implanting transition zone according to the method for the present invention Material.As shown, heat sink composite material 1 includes substrate 2, ion implanting transition zone 3 and electroplated layer 4.In Fig. 2, only exist Ion implanting transition zone 3 is provided on the upper surface of substrate 2, and electroplated layer 4 is then located at the outer surface of ion implanting transition zone 3 On.Similarly, in fig. 3 it is shown that be respectively formed in the upper and lower surfaces of substrate 2 ion implanting transition zone 3 with And the electroplated layer 4 on the outer surface of ion implanting transition zone 3 is set.Experiments have shown that for such single side and/or Double-side hot The binding force of heavy composite material, composite base material and outer layer electro-coppering is good, after removing oxide layer much higher than Typical physical or chemistry Composite base material and electroplated layer between the situation that combines.
Fig. 4 is the operation principle schematic diagram of ion implanting according to the present invention.As shown in figure 4, in ion implantation process, High voltage electric field carries out arc discharge on the surface of metallic cathode target, to form electric arc spot.Target material surface at electric arc spot Metallic by ionization, and be detached from target material surface.Then, the metallic of ionization is 1-1000kV by voltage Accelerating field effect, obtain range in the energy of 1-1000keV, become high-velocity particles.These are by the high speed of electric field acceleration Particle is then injected at the certain depth inside substrate, forms ion implanted layer.
In a specific embodiment, ion implanting is realized by the following method.Firstly, selecting conductive material as target Material generates target ionization by arcing under vacuum conditions using metallic vapour vacuum arc ion source (MEVVA) Metal ion.Then, accelerate the ion under the electric field of high voltage and obtain very high energy (such as 5-1000keV, such as 10keV, 50keV, 100keV, 200keV, 500keV etc.).Then, the metal ion of high energy directly hits base with very high speed Material surface, and be injected into the certain depth bounds of lower face (such as 1-100nm, such as 5nm, 10nm, 20nm, 50nm Deng).Chemical bond or interstitial structure are formd between the material molecule of the metal ion and substrate that are injected, to form doping Structure.The outer surface of thus obtained ion implanted layer and the outer surface on substrate surface layer are flush, and its inner surface is then deep into The inside on substrate surface layer.For example, ion implanted layer is located at the depth of 1-100nm (such as 5-50nm) below substrate surface.This When, the exterior portion on substrate surface layer is configured to a part of diffusion barrier layer due to being formed with ion implanted layer.
During ion implanting, the metal ion of target is forcibly injected into the inside of substrate with very high speed, with base Doped structure is formed between material, the lower face being equivalent in substrate forms large number of foundation pile.Due to the presence of foundation pile, And subsequent extra play obtained is connected with foundation pile, thus the binding force between final coating layer obtained and substrate is also higher.Separately It outside,, can by controlling various relevant parameters, such as Injection Current, injecting voltage, implantation dosage etc. in ion implantation process Depth inside surface layer is entered to adjust ion implanted layer, that is, the inner surface of ion implanted layer institute below substrate surface The depth at place.In a preferred embodiment, the energy for injecting ion is 5-1000keV, and implantation dosage is 1.0 × 1012- 1.0×1018ions/cm2(preferably, implantation dosage is 1.0 × 1015-5.0×1016ions/cm2), to make ion implanted layer Inner surface be located at the depth of 5-50nm below substrate surface.
According to the present invention, it by using ion implanting to the corrosion resistant metal substrate surface with oxide layer, effectively keeps away Exempt from influence of the surface oxide layer to interface binding power of metal base.Meanwhile by using ion implanting, also shape to metal base The binding force of subsequent electroplated layer and substrate is improved at the ion implanting transition zone of easy plating, thus most possibly with it is low at This mode realizes the manufacture craft of composite heat sink material and the key performance of " low CTE, high heat conductance, density are small ".
As described above, it is injected by using vacuum ionic, by the metal ion of high-energy such as Ni ion implanting to gold On the surface oxide layer for belonging to substrate.Original oxide layer is covered as a result, and microcosmic surface occurs with it and is reacted, to form height The Ni ion implanting transition zone of binding force.Here, when vacuum arc discharge can also generate many rulers while generating charged ion The very little not charged particle at 0.1-10 μm.The presence of these particles has great shadow to the performance of institute's deposition film or implanted layer It rings, causes film or implanted layer rough surface, compactness is poor, glossiness and declines etc. with the binding force of substrate.In order to remove or Reduce cathode vacuum arc generate bulky grain, magnetic filter can be used, that is, establish a curved magnetic field, filter out without The charged ion of needs, is only directed to the surface of substrate by the bulky grain of electricity along curved magnetic field.It is according to the present invention as a result, Another embodiment carries out Magnetic filter deposition Cu ion again after forming Ni ion implanting transition zone to form Cu ion deposition mistake Cross layer.Then, surface conductivity, wellability and the roughness of metal base are further increased, thus in subsequent metal base During the electro-coppering on material surface, the binding force of composite base material and electro-coppering is improved.In addition, ion implanting and plating not only may be used It is made of chip, and roll-to-roll production can be carried out to banding substrate.
According to the present invention, it provides not only a kind of for improving the heat sink composite material matrix and electricity that have metal oxide layer The method of the binding force of coating, and therefore production obtains a kind of heat sink metallic composite of plating binding force enhancing, packet Include substrate, ion implanting transition zone and electroplated layer.Wherein,
Substrate: for example including W, Mo, alloy Kovar, alloy Invar etc.;
Ion implanting transition zone: for example including Ni, Cu, Ni+Cu;And
Electroplated layer: for example including the double of single coating of Cu, Ni, Au, Pd, Ag etc. or Ni+Au, Ni+Cu, Ni+Pd, Ni+Ag etc. Coating.
Additionally, it is well known that carbon fiber has high-intensitive and modulus, good conductive, thermally conductive and wear-resisting property, as one Kind new function material has a extensive future.However, carbon fiber and copper are nonwetting in liquid/solid, also do not react, thus causes Carbon fiber dispersibility and binding force in Copper substrate is poor.In general, the method for solving such technical problem is in carbon fiber surface One layer of metal is coated to improve the wetability of carbon fiber and copper liquid, to improve the interface bond strength of composite material.For example, common Solution have vapor deposition, chemical plating, plating etc..Wherein, galvanoplastic refer to one layer of copper of plating, technique on carbon fiber Simply, easy to operate, it is a kind of side of improvement " wettability difference material (such as carbon fiber, graphite) " surface characteristic got a good chance of Method.It is noted that for improving wettability, key is to improve the interface binding power of C/Cu.Currently, have been reported that by using Air thermal oxide increases the roughness and wellability of carbon fiber, to be conducive to improve the interface binding power of C/Cu, but practical The effect is unsatisfactory, there is a problem of that processing is uneven, binding force stability is poor.
Although not having reluctant gold on the substrate surface of fiber C, fiber B, graphite, diamond, AlN etc. Belong to oxide layer, but inventor arrives the metal ion implantation of high-energy the study found that likewise by using vacuum ionic injection On substrate surface, ion implanting transition zone is consequently formed to improve the interface binding power between substrate and coating layer.Below, have Body is described in detail by taking carbon fiber as an example.For example, in one embodiment, being injected by vacuum ionic, by high-energy metal Ion such as Ni ion implanting forms the Ni ion implanting transition zone of high-bond on the surface of carbon fiber base material.Further, right Ni ion implanting transition zone continues Magnetic filter deposition Cu ion and forms Cu ion deposition transition zone.Carbon is improved as a result, The wellability and roughness of fibrous substrate surface, thus during the electro-coppering of subsequent substrate surface, improve carbon fiber and The binding force of electro-coppering, thus to obtain " carbon fiber+copper " composite filament of high quality.Finally, the composite filament passes through subsequent " liquid phase Copper infusion process " can prepare copper-carbon fibre composite.Liquid phase copper and the wetability of copper facing composite filament are preferable as a result, fiber and Copper interface does not lead to the problem of cavity or disengages, and is well combined.
On the other hand, with the development of 5G technology, the application demand of high-frequency circuit board is further extensive, and to its heat dissipation performance Requirement it is also further stringent.According to the present invention, a kind of novel high-frequency pcb board is additionally provided, is buried wherein or embedded with according to this hair Bright heat sink composite material obtained.As shown in figure 5, frequency PCB plate 10 includes core material 13 and external copper layer 11, and setting The low DK(dielectric constant of substrate such as high frequency between core material 13 and external copper layer 11 for insulation) organic resin material 12.Core material 13 is made of two or more layers, and being similarly provided with the low DK of insulating substrate such as high frequency between the layers has Machine resin material 12.Organic resin material 12 is for example including one of PTFE, LCP, PPE or a variety of.Optionally, frequency PCB Plate 10 is also provided with one or more through-holes.Metalized is carried out in the inside of through-hole, thus formed on conducting pcb board 10, The plated through-hole 14 of lower outer layer.Specifically, it inside the substrate of frequency PCB plate 10, is also embedded with according to the present invention heat sink compound Material 15.As shown, heat sink composite material 15 is embedded in frequency PCB plate 10 through organic resin material 12 and plated through-hole 14 are spaced apart.The heat sink composite material in turn includes substrate, ion implanting transition zone and copper electroplating layer from inside to outside.It is similar In the upper and lower layers of copper in the outside of core material 13, the copper electroplating layer of heat sink composite material 15 also passes through brownification processing.That is, in copper Binding force when the Surface Creation layer of oxide layer of layer is to be lifted at pressing between layers of copper and the substrate of resin material etc..
According to the present invention, the outer layer for being embedded with the frequency PCB plate of heat sink composite material is layers of copper, this facilitates routinely PCB Process carries out brownification processing to layers of copper, and guarantees the binding force of circuit board when with the base material pressings such as such as PP.In addition, test Show heat sink composite material according to the present invention, be resistant to by 260-280 °C of Reflow Soldering or wicking 3 seconds, 5 seconds, 10 seconds, 20 seconds or longer thermal shock, and pass through bending experiment, layers of copper and the not stratified blistering of substrate.It is resulting compared with the prior art Heat sink composite material handles resulting heat sink composite material satisfaction to the height of circuit board high frequency and heat dissipation according to the method for the present invention Performance requirement;Heat caused by local high performance components or component compact district can be oriented to rapidly entire printed board, made Heat dissipation area increases, and it is excessively high and lead to that electric property deteriorates or high frequency performance is impacted to be not local temperature rise;When necessary may be used It buries heat sink composite material using interior and is connected with casing, make heat guiding casing and make heat dissipation more preferably.In addition, multi-layer PCB board is logical It crosses and buries heat sink composite material using in low CTE, the thermal expansion coefficient of multilayer circuit board may make to substantially reduce, be preferably applicable in High, high integration the electronic product in wiring density.
This written explanation has used the example including optimal mode to disclose the present invention, and also makes those skilled in the art It can implement the present invention, including make and use any device or system, and execute any method combined.The present invention can The range for obtaining patent is defined by the claims, and may include the contemplated other examples out of those skilled in the art.If These other examples, which have, has no different structural details, or if these other examples from the written language of claim Equivalent constructions element including the written language with claim without essence difference, then it is assumed that these examples are in claim Within the scope of.

Claims (16)

1. a kind of method for handling heat sink composite material substrate to improve its plating binding force, comprising:
The corrosion resistant metal substrate for having metal oxide layer is provided;
The first metal ion is injected on the surface of the corrosion resistant metal substrate by ion implanting to form ion implanting mistake Cross layer;And
By be electroplated on the ion implanting transition zone the second metal ion of plating to form electroplated layer.
2. the method according to claim 1, wherein first metal ion is injected into the metal oxidation On layer and the metal oxide layer is covered to form the ion implanting transition zone.
3. the method according to claim 1, wherein the corrosion resistant metal substrate includes W, Mo, alloy Kovar Or alloy Invar.
4. the method according to claim 1, wherein the method also includes forming the ion implanting transition During layer, another metal ion of ion implanting is then carried out again after the first metal ion described in ion implanting.
5. the method according to claim 1, wherein the method also includes forming the ion implanting transition Magnetic filter deposition Cu ion is carried out after layer again to form Cu ion deposition transition zone.
6. the method according to claim 1, wherein first metal ion and the second metal ion wrap respectively Include Ni or Cu.
7. a kind of method for handling heat sink composite material substrate to improve its plating binding force, comprising:
Substrate is provided, the substrate includes fiber C, fiber B, graphite, diamond or AlN;
Inject the first metal ion on the surface of the substrate by ion implanting to form ion implanting transition zone;And
By be electroplated on the ion implanting transition zone the second metal ion of plating to form electroplated layer.
8. the method according to the description of claim 7 is characterized in that the method also includes the first metals described in ion implanting Then another metal ion of ion implanting is carried out after ion again.
9. the method according to the description of claim 7 is characterized in that the method also includes forming the ion implanting transition Magnetic filter deposition Cu ion is carried out after layer again to form Cu ion deposition transition zone.
10. a kind of heat sink composite material of plating binding force enhancing, including substrate, electroplated layer, and between the substrate and institute State the ion implanting transition zone between electroplated layer.
11. heat sink composite material according to claim 10, which is characterized in that having on the surface of the substrate influences The surface of the metal oxide layer of electroplated layer binding force or the substrate and the binding force of the electroplated layer are poor, wherein the ion Implanting transition layer and the metal oxide layer adulterate and cover the metal oxide layer.
12. heat sink composite material according to claim 10, which is characterized in that the substrate is by fiber C, fiber B, stone Ink, diamond or AlN are constituted.
13. heat sink composite material according to claim 10, which is characterized in that the ion implanting transition zone include Ni, Cu or their combination.
14. heat sink composite material according to claim 10, which is characterized in that the heat sink composite material further includes being formed Cu ion deposition transition zone on the ion implanting transition zone.
15. heat sink composite material according to claim 10, which is characterized in that the electroplated layer include by Cu, Ni, Au, Single coating that Pd or Ag is constituted, or include the double coating being made of one of Au, Cu, Pd or Ag and Ni.
16. a kind of frequency PCB plate, is embedded with heat sink composite material described in any one of 0-15 according to claim 1.
CN201811100388.7A 2018-09-20 2018-09-20 Heat sink composite material plating process and its product Pending CN109348649A (en)

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CN111394695A (en) * 2020-04-10 2020-07-10 扬州工业职业技术学院 Method for plating palladium on surface of steel strip
WO2021143381A1 (en) * 2020-01-16 2021-07-22 武汉光谷创元电子有限公司 Method for manufacturing three-dimensional circuit and electronic element
CN113529040A (en) * 2020-07-06 2021-10-22 深圳市海维通光电技术有限公司 Carbon material surface treatment method

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CN103079339A (en) * 2013-01-28 2013-05-01 深圳市泓亚光电子有限公司 Metal ceramic composite substrate and manufacturing method for same
CN207382679U (en) * 2017-07-14 2018-05-18 武汉光谷创元电子有限公司 Capacitance and bury condenser network plate

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WO2021143381A1 (en) * 2020-01-16 2021-07-22 武汉光谷创元电子有限公司 Method for manufacturing three-dimensional circuit and electronic element
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CN113529040A (en) * 2020-07-06 2021-10-22 深圳市海维通光电技术有限公司 Carbon material surface treatment method

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