CN103078252B - Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof - Google Patents
Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof Download PDFInfo
- Publication number
- CN103078252B CN103078252B CN201310029832.1A CN201310029832A CN103078252B CN 103078252 B CN103078252 B CN 103078252B CN 201310029832 A CN201310029832 A CN 201310029832A CN 103078252 B CN103078252 B CN 103078252B
- Authority
- CN
- China
- Prior art keywords
- layer
- quantum well
- active area
- antimonide
- strained quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a dual-wavelength antimonide strained quantum well semiconductor laser and a preparation method thereof. The dual-wavelength antimonide strained quantum well semiconductor laser comprises an n-type electrode, an n-type substrate, a buffering layer, a first n-type lower limiting layer, a first lower waveguide layer, a first active area, a first upper waveguide layer, a first p-type upper limiting layer, a tunneling pn node, a second n-type lower limiting layer, a second lower waveguide layer, a second active area, a second upper waveguide layer, a second p-type upper limiting layer, a covering layer, a SiO2 mask and a p-type electrode, which are sequentially arranged from top to bottom; the laser is an edge-emitting ridge-shaped laser, wherein quantum-well waveguide layers and barrier layers of the first active area and the second active area are respectively made of undoped low-aluminium Al0.4Ga0.6As0.03Sb0.97; the limiting layers are respectively made of high-aluminium Al0.75Ga0.25As0.05Sb0.95; the p-type limiting layers adopt a doped element Be; and the n-type limiting layers adopt a doped element Te. The invention has the advantages that the internal quantum efficiency of a dual-color laser is increased, and continuous masing of a single GaSb-based laser chip under the room temperature at the 1.83mum and 2.0mum wavebands is realized.
Description
Technical field
The invention belongs to optical semiconductor electro-technical field, the present invention relates to a kind of wavelength is dual wavelength antimonide strained quantum well semiconductor laser of 1.83 μ m and 2.0 μ m and preparation method thereof.
Background technology
2～5 mu m wavebands are extremely important atmospheric transmission windows, at this wave band, are expected to realize free space communication; There is strong absworption peak in asymmetric double atom and polyatomic molecule gas simultaneously under 2～5 mu m wavebands, especially a large amount of pollution gas molecule (NH
3(2.1 μ m), HF (2.5 μ m), CH
4(2.35 μ mand3.3 μ m), HCHO (3.5 μ m), HCl (3.5 μ m), CO (2.3 μ m)), thereby excitation wavelength has important purposes in the GaSb of this wave band base mid and far infrared laser device in communication and gas molecule spectrum direction.
GaSb base I class Strained Quantum Well Lasers is through the development of many decades, and the continuous-wave lasing performance under room temperature has obtained promoting significantly, and excitation wavelength has been expanded to 3.73 μ m.The Garbanzo of Massachusetts Polytechnics in 1997, D.Z. wait people first to obtain the room temperature continuous-wave lasing of I class GaSb based quantum well laser wavelength at 2 μ m, under the laser room temperature of the long 2mm in chamber, continuous-wave lasing power has reached 1.9W, and after this they have realized again continuous-wave lasing under the room temperature that wavelength is 2.3～2.7 mu m waveband laser devices; The people such as L.Shterengas in the Shi Xi of New York University branch school in 2004 are by the 1W that arrived of the laser room temperature continuous power output raising of λ=2.4 μ m, pulse power is 9W, photoelectric conversion efficiency is up to 17.5%, this research group has constantly extended to 3.6 μ m by the operation wavelength of this class laser, and has realized the room temperature continuous-wave lasing of the above wave band hundred milliwatt levels of 3 μ m.On the basis of GaSb base ridge lasers performance boost, large quantity research has not only been done to the Material growth of laser by each research group, has realized highly reliable low al composition laser; And device architecture has been carried out to Expanding design, prepared VCSEL, the DFB of GaSb base, the laser of dish formula structure.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of dual wavelength antimonide strained quantum well semiconductor laser that can realize continuous-wave lasing under 1.83 μ m and 2.0 μ m room temperatures and preparation method thereof, to improve the internal quantum of two-color laser device, realize the continuous-wave lasing of 1.83 μ m and 2.0 mu m wavebands under single GaSb base laser chip room temperature, improve the integrated level of chip of laser.
(2) technical scheme
To achieve these goals, the invention provides a kind of dual wavelength antimonide strained quantum well semiconductor laser, this laser comprises ducting layer 13, the second p-type upper limiting layer 14, cap rock 15, SiO on ducting layer 7 on N-shaped electrode 1, N-shaped substrate 2, resilient coating 3, the first N-shaped lower limit layer 4, the first lower waveguide layer 5, the first active area 6, first, the first p-type upper limiting layer 8, tunnelling pn knot the 9, second N-shaped lower limit layer 10, the second lower waveguide layer 11, the second active area 12, second from the bottom to top successively
2mask 16 and p-type electrode 17, and this laser is the ridge lasers of limit transmitting, wherein, and the Al of the low Al component that the quantum well ducting layer of the first active area 6 and the second active area 12 and barrier layer all adopt non-doping
0.4ga
0.6as
0.03sb
0.97material, limiting layer all adopts the Al of high Al contents
0.75ga
0.25as
0.05sb
0.95material, it is Be that p-type limiting layer adopts doped chemical, the doped chemical that N-shaped limiting layer adopts is Te.
To achieve these goals, the present invention also provides a kind of method of preparing dual wavelength antimonide strained quantum well semiconductor laser, comprising:
Step 1: laser epitaxial wafer growth: ducting layer, the second p-type upper limiting layer and GaSb cap rock on ducting layer, the first p-type upper limiting layer, tunnelling pn knot, the second N-shaped lower limit layer, the second lower waveguide layer, the second active area, second on the GaSb resilient coating of growing successively on substrate, the first N-shaped lower limit layer, the first lower waveguide layer, the first active area, first;
Step 2: photoetching ridge waveguide, at non-selective wet etching GaSb cap rock and the second p-type upper limiting layer, form the ridge waveguide of laser, adopt PECVD method deposit SiO on the ridge waveguide forming
2layer, adopts hydrofluoric acid cushioning liquid (BOE) corrosion SiO
2layer, prepares electrode contact window; Then at the electrode contact window of preparation and the SiO not being corroded
2electron beam evaporation deposit P type electrode on layer; Finally substrate back is carried out to attenuate, the substrate back after attenuate is made N-shaped electrode;
Step 3: the tube core that dissociates, P type electrode place one is faced down and is welded on heat sink the going up of copper of plating In, adopt TO
3shell encapsulates, and completes the making of laser.
(3) beneficial effect
From technique scheme, can find out, the present invention has following beneficial effect:
1, this dual wavelength antimonide strained quantum well semiconductor laser that can realize continuous-wave lasing under 1.83 μ m and 2.0 μ m room temperatures provided by the invention and preparation method thereof, by adopting heavy doping GaSb material tunnelling pn to tie between quantum well, improved the internal quantum of two-color laser device, realize the continuous-wave lasing of 1.83 μ m and 2.0 mu m wavebands under single GaSb base laser chip room temperature, effectively improved the integrated level of chip of laser.
2, this dual wavelength antimonide strained quantum well semiconductor laser that can realize continuous-wave lasing under 1.83 μ m and 2.0 μ m room temperatures provided by the invention and preparation method thereof, by device structure design and processing step, improve, the GaSb material tunnelling pn knot of growing highly doped between two strained quantum wells, effect due to applying bias, electronics is entered in the second active area by tunnel junctions by the first active area, further improve the internal quantum of two-color laser device, realized the continuous-wave lasing under single chip of laser 1.83 μ m and 2.0 mum wavelength room temperatures.
3, this dual wavelength antimonide strained quantum well semiconductor laser that can realize continuous-wave lasing under 1.83 μ m and 2.0 μ m room temperatures provided by the invention and preparation method thereof, there is source in signal source, the microwave signal that can be applied to pollution gas checkout equipment; This structure possesses strong wavelength transplantability simultaneously, can Effective Regulation excitation wavelength by Material growth technology.
Accompanying drawing explanation
For further illustrating technology contents of the present invention, once, in conjunction with example and accompanying drawing, be described in detail as follows, wherein:
Fig. 1 is according to the structural representation of the dual wavelength antimonide strained quantum well semiconductor laser of the embodiment of the present invention;
Fig. 2 is the structural representation according to the epitaxial material of the dual wavelength antimonide strained quantum well semiconductor laser of the embodiment of the present invention;
Fig. 3 is according to the structural representation of the heavy doping GaSb tunnelling pn knot of the dual wavelength antimonide strained quantum well semiconductor laser of the embodiment of the present invention;
Scanning electron microscopy (SEM) photo of the ridge table top that Fig. 4 is prepared according to the embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is according to the structural representation of the dual wavelength antimonide strained quantum well semiconductor laser of the embodiment of the present invention, and this laser comprises ducting layer 13, the second p-type upper limiting layer 14, cap rock 15, SiO on ducting layer 7 on N-shaped electrode 1, N-shaped substrate 2, resilient coating 3, the first N-shaped lower limit layer 4, the first lower waveguide layer 5, the first active area 6, first, the first p-type upper limiting layer 8, tunnelling pn knot the 9, second N-shaped lower limit layer 10, the second lower waveguide layer 11, the second active area 12, second from the bottom to top successively
2mask 16 and p-type electrode 17, and this laser is the ridge lasers of limit transmitting, wherein, and the Al of the low Al component that the quantum well ducting layer of the first active area 6 and the second active area 12 and barrier layer all adopt non-doping
0.4ga
0.6as
0.03sb
0.97material, limiting layer all adopts the Al of high Al contents
0.75ga
0.25as
0.05sb
0.95material, it is Be that p-type limiting layer adopts doped chemical, the doped chemical that N-shaped limiting layer adopts is Te.
Wherein, described N-shaped electrode 1 is formed at the back side of the N-shaped substrate 2 after attenuate, the Au/Ge/Ni that electrode material is magnetron sputtering.Described N-shaped substrate 2 adopts (001) N-type GaSb substrate.Described resilient coating 3 is formed on N-shaped substrate 2, is N-shaped GaSb material.Described the first N-shaped lower limit layer 4 is grown on resilient coating 3, adopts the AlGaAsSb material of high Al contents, and doped chemical is Te, for the limiting layer of the first active area 6.Described the first lower waveguide layer 5 is grown on the first N-shaped lower limit layer 4, adopts the AlGaAsSb material of the low al composition of non-doping.Described the first active area 6 is grown on the first lower waveguide layer 5, and active area materials is non-doping InGaSb/AlGaAsSb strained quantum well, and in quantum well, material is InGaSb, and quantum well trap is wide is 10nm, emission wavelength 2.0 μ m.On described first, ducting layer 7 is grown on the first active area 6, adopts the AlGaAsSb material of the low al composition of non-doping.Described the first p-type upper limiting layer 8 is grown on first on ducting layer 7, adopts the AlGaAsSb material of high Al contents.Described tunnelling pn knot 9 is grown on first on ducting layer 8, and wherein p district doped chemical is Be, doping content 10
19cm
-3, width is 40nm; N district doped chemical is Te, doping content 3 * 10
18cm
-3, width is 50nm, realizes tunnelling between the with of charge carrier.Described the second N-shaped lower limit layer 10 is grown on tunnelling pn knot 9, adopts the AlGaAsSb material of high Al contents, and doped chemical is Te, for the limiting layer of the second active area 12.Described the second lower waveguide layer 11 is grown on the second lower limit layer 10, adopts the AlGaAsSb material of the low al composition of non-doping.Described the second active area 12 is grown on the second lower waveguide layer 11, and active area materials is non-doping InGaSb/AlGaAsSb strained quantum well, and in quantum well, material is InGaSb, and quantum well trap is wide is 10nm, emission wavelength 1.83 μ m.On described second, ducting layer 13 is grown on the second active area 12, adopts the AlGaAsSb material of the low al composition of non-doping.Described the second p-type upper limiting layer 14 is grown on ducting layer 13, adopts the AlGaAsSb material of high Al contents, and doped chemical is Be, for the limiting layer of the second active area 12.Described cap rock 15 is grown on the second p-type upper limiting layer 14, adopts p-type GaSb material, and doped chemical is Be.Described SiO
2mask 16 is grown on cap rock 15, adopts the deposit of chemical vapour deposition (CVD) PECVD method, plays the effect of insulation.Described p-type electrode 17, its material adopting is magnetron sputtering Ti/Pt/Au.The quantum well that this laser adopts comprise two groups of strained quantum wells that In component is different, the material component of the first active area 6 is In
0.19ga
0.81sb, the trap of every group of quantum well is wide is 10nm, and this active area emission wavelength is 2.0 μ m, and the material component of the second active area 12 is In
0.09ga
0.91sb, the trap of every group of quantum well is wide is 10nm, the emission wavelength of this active area is 1.83 μ m.Cascade is carried out by GaSb tunnelling pn knot 9 in described the first active area 6 and described the second active area 12, and under applying bias effect, electronics is entered in the second active area 12 by tunnelling pn knot 9 by the first active area 6, has improved the internal quantum of two-color laser device.
The structural representation of the dual wavelength antimonide strained quantum well semiconductor laser based on shown in Fig. 1, the present invention also provides a kind of method of preparing dual wavelength antimonide strained quantum well semiconductor laser, comprising:
Step 1: laser epitaxial wafer growth: ducting layer, the second p-type upper limiting layer and GaSb cap rock on ducting layer, the first p-type upper limiting layer, tunnelling pn knot, the second N-shaped lower limit layer, the second lower waveguide layer, the second active area, second on the GaSb resilient coating of growing successively on substrate, the first N-shaped lower limit layer, the first lower waveguide layer, the first active area, first;
Step 2: photoetching ridge waveguide, at non-selective wet etching GaSb cap rock and the second p-type upper limiting layer, form the ridge waveguide of laser, adopt PECVD method deposit SiO on the ridge waveguide forming
2layer, adopts hydrofluoric acid cushioning liquid (BOE) corrosion SiO
2layer, prepares electrode contact window; Then at the electrode contact window of preparation and the SiO not being corroded
2electron beam evaporation deposit P type electrode on layer; Finally substrate back is carried out to attenuate, the substrate back after attenuate is made N-shaped electrode;
Step 3: the tube core that dissociates, P type electrode place one is faced down and is welded on heat sink the going up of copper of plating In, adopt TO
3shell encapsulates, and completes the making of laser.
This method of preparing dual wavelength antimonide strained quantum well semiconductor laser provided by the invention, technique is simple, and consistent wavelength is strong, and its concrete technology is as follows:
(1) epitaxial growth, epitaxial material structure as shown in Figure 2 and Figure 3.
(1) substrate: adopt the GaSb substrate of (001) crystal orientation N-type doping, doping content is: 10
17/ cm
3;
(2) resilient coating: at Grown N-shaped GaSb material, thickness is 300nm, and doped chemical is: Te, doping content is: 10
18/ cm
3, for stopping the upwards growth of defect of substrate, improve the crystal mass of extension.
(3) first N-shaped lower limit layers: be grown in the N-type lower limit layer on resilient coating, thickness is 800nm, thickness adopts high Al contents material: Al
0.75ga
0.25as
0.07sb
0.93, doped chemical is Te, doping content is: 2 * 10
18/ cm
3, as the first optical mode field, active area restriction, limiting carrier diffusion simultaneously, reduces leakage current;
(4) first lower waveguide layers: be grown in the lower waveguide layer on lower limit layer 1, thickness is 200nm, adopt the low al composition material of non-doping: Al
0.25ga
0.75as
0.02sb
0.98, the light field of the first active area is limited, the radiation field pattern of laser is concentrated in the scope of the first active area;
(5) first active areas: active area is grown on lower waveguide layer, active area materials is non-doping strained quantum well In
0.19ga
0.81sb/Al
0.25ga
0.75as
0.02sb
0.98, in quantum well, material is: In
0.19ga
0.81sb, trap is wide is 10nm, emission wavelength 2.0 μ m;
Ducting layer on (6) first: be grown in ducting layer on first on active area, thickness is 200nm, adopts the low al composition material of non-doping: Al
0.25ga
0.75as
0.02sb
0.98, the light field of the first active area is limited, the radiation field pattern of laser is concentrated in the scope of the first active area;
(7) first p-type upper limiting layers: be grown in the p-type upper limiting layer on ducting layer on first, thickness is 800nm, adopt high Al contents materials A l
0.75ga
0.25as
0.07sb
0.93, doped chemical is Be, doping content is: 5 * 10
18/ cm
3, as the first optical mode field, active area restriction, limiting carrier diffusion simultaneously, reduces leakage current;
(8) tunnelling pn knot: be grown in the heavily doped high Al contents material GaSb pn knot on upper limiting layer, wherein p district doped chemical is Be, and doping content is: 10
19/ cm
3, thickness is 40nm; N district doped chemical is: Te, doping content is: 5 * 10
18/ cm
3, thickness is 50nm.Tunnelling pn ties tunnelling between the with that can realize charge carrier, under applying bias effect, electronics is entered in the second active area by tunnel junctions by the first active area, injects the photon that an electronics can produce a plurality of different-energies, has further improved the internal quantum of two-color laser device; The thickness of simultaneously tying by designing rightly tunnelling pn, and the Al that adopts wide potential barrier in GaSb pn knot both sides
0.75ga
0.25as
0.07sb
0.93material, stoped minority carrier to the injection of pn knot, to have strengthened minority carrier compound at heavily doped pn knot, effectively prevented that the electric current causing based on thyristor effect is unstable.
(9) second N-shaped lower limit layers: be grown in the N-shaped lower limit layer on resilient coating, thickness is 800nm, thickness adopts high Al contents material: Al
0.75ga
0.25as
0.07sb
0.93, doped chemical is Te, doping content is: 2 * 10
18/ cm
3, as the second active area limiting layer;
(10) second lower waveguide layers: be grown in the lower waveguide layer on lower limit layer 2, thickness is 200nm, adopt the low al composition material of non-doping: Al
0.25ga
0.75as
0.02sb
0.98;
(11) second active areas: active area is grown on lower waveguide layer, active area materials is non-doping strained quantum well In
0.09ga
0.91sb/Al
0.25ga
0.75as
0.02sb
0.98, in quantum well, material is: In
0.09ga
0.91sb, trap is wide is 10nm, emission wavelength 1.8 μ m;
Ducting layer on (12) second: be grown in ducting layer on second on active area, thickness is 200nm, adopts the low al composition material of non-doping: Al
0.25ga
0.75as
0.02sb
0.98;
(13) second p-type upper limiting layers: be grown in the p-type upper limiting layer on ducting layer on second, thickness is 800nm, adopt high Al contents materials A l
0.75ga
0.25as
0.07sb
0.93, doped chemical is Be, doping content is: 5 * 10
18/ cm
3, as the first active area limiting layer;
(14) cap rock: be grown in the cap rock on upper limiting layer 2, thickness is 200nm, adopts p-type GaSb material, and doped chemical is: Be, doping content is 2 * 10
18/ cm
3.Lid, as contact electrode layer, can effectively be protected the limiting layer of high Al contents, prevents its oxidation; Adopt heavy doping, can reduce the series resistance of device, improve I-V characteristic, improve the transformation efficiency of laser.
(2) the present invention takes following steps in device technology, as shown in Figure 4:
Step 1, cleaning epitaxial wafer, adopt trichloroethylene, acetone, ethanol, deionized water according to this epitaxial wafer to be cleaned, and can remove the most of pollutant in epitaxial wafer surface, improves the cleannes of epitaxial wafer, guarantees processing quality.
Step 2, photoetching ridge table top, ridge table top can improve the injected current density of laser, effectively suppresses the horizontal proliferation of electric current.Optical graving is for the ridge table top of 20 μ m.
Adopt HCl: H
2o
2: H
2o=50: 0.5: 50 (volume ratio) corrosive liquid wet etching table top, the corrosive liquid of this proportioning can be realized preferably to GaSb cap rock and the non-selective etching of AlGaAsSb limiting layer, the ridge table top sidewall of acquisition, surface smoothing, as shown in Figure 4.
Step 3, PECVD deposit 300nmSiO
2, this layer of SiO
2possess good insulation property, guaranteed the injection of electric current from electrode window through ray; In subsequent technique, can there is protective effect to part table simultaneously.
Step 4, photoetching electrode contact window, the electrode window through ray of secondary alignment 15 μ m on the table top of 20 μ m, adopts hydrofluoric acid cushioning liquid (BOE) corrode silicon dioxide, prepares electrode contact window.
Step 5, deposit p-type electrode, adopt electron beam evaporation deposit P type electrode Ti/Pt/Au, and its thickness is followed successively by 500A, 500A, 3000A.
Step 6, substrate thinning, the GaSb substrate that epitaxial growth is used is 650 μ m, and the size that is unfavorable for dissociating is less, the laser that threshold current density is low, thereby need to carry out mechanical reduction to 120 μ m to substrate, then by polishing fluid polishing to obtain good N-type electrode contact.
Step 7, deposit N-shaped electrode adopt electron beam evaporation deposit N-type electrode A u/Ge/Ni alloy, and its thickness is followed successively by 3000A, 500A, 500A.The high temperature alloy of 360 ℃ of left and right in N2 atmosphere, the alloy time is 1min.
Step 8, the encapsulation of dissociating, be dissociated into the long 1mm singulated dies in chamber, and P faces down and is welded on heat sink the going up of copper of plating In, adopts TO
3shell encapsulates.
Through a kind of dual wavelength antimonide of above-mentioned steps Strained Quantum Well Lasers, just prepared.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (21)
1. the dual wavelength antimonide strained quantum well semiconductor laser that wavelength is 1.83 μ m and 2.0 μ m, it is characterized in that, this laser comprises N-shaped electrode (1) from the bottom to top successively, N-shaped substrate (2), resilient coating (3), the first N-shaped lower limit layer (4), the first lower waveguide layer (5), the first active area (6), ducting layer on first (7), the first p-type upper limiting layer (8), tunnelling pn ties (9), the second N-shaped lower limit layer (10), the second lower waveguide layer (11), the second active area (12), ducting layer on second (13), the second p-type upper limiting layer (14), cap rock (15), SiO
2mask (16) and p-type electrode (17), and this laser is the ridge lasers of limit transmitting, wherein, and the first active area (6) and the quantum well ducting layer of the second active area (12) and the Al of the low Al component that barrier layer all adopts non-doping
0.4ga
0.6as
0.03sb
0.97material, limiting layer all adopts the Al of high Al contents
0.75ga
0.25as
0.05sb
0.95material, it is Be that p-type limiting layer adopts doped chemical, the doped chemical that N-shaped limiting layer adopts is Te.
2. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, is characterized in that, described N-shaped electrode (1) is formed at the back side of the N-shaped substrate (2) after attenuate, the Au/Ge/Ni that electrode material is magnetron sputtering.
3. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, is characterized in that, described N-shaped substrate (2) adopts (001) N-type GaSb substrate.
4. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, is characterized in that, described resilient coating (3) is formed on N-shaped substrate (2), is N-shaped GaSb material.
5. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, it is characterized in that, described the first N-shaped lower limit layer (4) is grown on resilient coating (3), adopt the AlGaAsSb material of high Al contents, doped chemical is Te, for the limiting layer of the first active area (6).
6. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, is characterized in that, it is upper that described the first lower waveguide layer (5) is grown in the first N-shaped lower limit layer (4), adopts the AlGaAsSb material of the low al composition of non-doping.
7. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, it is characterized in that, described the first active area (6) is grown on the first lower waveguide layer (5), active area materials is non-doping InGaSb/AlGaAsSb strained quantum well, in quantum well, material is InGaSb, quantum well trap is wide is 10nm, emission wavelength 2.0 μ m.
8. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, is characterized in that, to be grown in the first active area (6) upper for ducting layer (7) on described first, adopts the AlGaAsSb material of the low al composition of non-doping.
9. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, is characterized in that, it is upper that described the first p-type upper limiting layer (8) is grown in ducting layer on first (7), adopts the AlGaAsSb material of high Al contents.
10. dual wavelength antimonide strained quantum well semiconductor laser according to claim 1, is characterized in that, it is upper that described tunnelling pn knot (9) is grown in the first p-type upper limiting layer (8), and wherein p district doped chemical is Be, doping content 10
19cm
-3, width is 40nm; N district doped chemical is Te, doping content 3 * 10
18cm
-3, width is 50nm, realizes the interband tunnelling of charge carrier.
11. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, it is characterized in that, described the second N-shaped lower limit layer (10) is grown on tunnelling pn knot (9), adopt the AlGaAsSb material of high Al contents, doped chemical is Te, for the limiting layer of the second active area (12).
12. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, is characterized in that, it is upper that described the second lower waveguide layer (11) is grown in the second lower limit layer (10), adopt the AlGaAsSb material of the low al composition of non-doping.
13. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, it is characterized in that, described the second active area (12) is grown on the second lower waveguide layer (11), active area materials is non-doping InGaSb/AlGaAsSb strained quantum well, in quantum well, material is InGaSb, quantum well trap is wide is 10nm, emission wavelength 1.83 μ m.
14. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, is characterized in that, to be grown in the second active area (12) upper for ducting layer (13) on described second, adopt the AlGaAsSb material of the low al composition of non-doping.
15. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, it is characterized in that, described the second p-type upper limiting layer (14) is grown on ducting layer on second (13), adopt the AlGaAsSb material of high Al contents, doped chemical is Be, for the limiting layer of the second active area (12).
16. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, is characterized in that, it is upper that described cap rock (15) is grown in the second p-type upper limiting layer (14), adopt p-type GaSb material, and doped chemical is Be.
17. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, is characterized in that described SiO
2it is upper that mask (16) is grown in cap rock (15), adopts the deposit of chemical vapour deposition (CVD) PECVD method, plays the effect of insulation.
18. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, is characterized in that, described p-type electrode (17), and its material adopting is magnetron sputtering Ti/Pt/Au.
19. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, is characterized in that, the quantum well that this laser adopts comprises two groups of strained quantum wells that In component is different, and the material component of the first active area (6) is In
0.19ga
0.81sb, the trap of every group of quantum well is wide is 10nm, and this first active area emission wavelength is 2.0 μ m, and the material component of the second active area (12) is In
0.09ga
0.91sb, the trap of every group of quantum well is wide is 10nm, the emission wavelength of this second active area is 1.83 μ m.
20. dual wavelength antimonide strained quantum well semiconductor lasers according to claim 1, it is characterized in that, cascade is carried out by GaSb tunnelling pn knot (9) in described the first active area (6) and described the second active area (12), under applying bias effect, electronics is entered in the second active area (12) by tunnelling pn knot (9) by the first active area (6).
21. 1 kinds of methods of preparing the dual wavelength antimonide strained quantum well semiconductor laser described in any one in claim 1 to 20, is characterized in that, comprising:
Step 1: laser epitaxial wafer growth: ducting layer, the second p-type upper limiting layer and GaSb cap rock on ducting layer, the first p-type upper limiting layer, tunnelling pn knot, the second N-shaped lower limit layer, the second lower waveguide layer, the second active area, second on the GaSb resilient coating of growing successively on substrate, the first N-shaped lower limit layer, the first lower waveguide layer, the first active area, first;
Step 2: photoetching ridge waveguide, at non-selective wet etching GaSb cap rock and the second p-type upper limiting layer, form the ridge waveguide of laser, adopt PECVD method deposit SiO on the ridge waveguide forming
2layer, adopts hydrofluoric acid cushioning liquid (BOE) corrosion SiO
2layer, prepares electrode contact window; Then at the electrode contact window of preparation and the SiO not being corroded
2electron beam evaporation deposit P type electrode on layer; Finally substrate back is carried out to attenuate, the substrate back after attenuate is made N-shaped electrode;
Step 3: the tube core that dissociates, P type electrode place one is faced down and is welded on heat sink the going up of copper of plating In, adopt TO
3shell encapsulates, and completes the making of laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310029832.1A CN103078252B (en) | 2013-01-25 | 2013-01-25 | Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310029832.1A CN103078252B (en) | 2013-01-25 | 2013-01-25 | Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103078252A CN103078252A (en) | 2013-05-01 |
| CN103078252B true CN103078252B (en) | 2014-08-20 |
Family
ID=48154701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310029832.1A Active CN103078252B (en) | 2013-01-25 | 2013-01-25 | Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103078252B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098595A (en) * | 2015-09-23 | 2015-11-25 | 中国科学院半导体研究所 | Fabrication method for integrated semiconductor laser |
| CN106300015A (en) * | 2016-09-30 | 2017-01-04 | 中国科学院半导体研究所 | A kind of high-power 1.8 4 μm semiconductor lasers and preparation method thereof |
| CN106602404A (en) * | 2016-12-30 | 2017-04-26 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and manufacturing method thereof |
| CN107147005B (en) * | 2017-05-31 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | Asymmetric waveguide 980nm single-mode laser |
| CN110829180A (en) * | 2019-11-07 | 2020-02-21 | 杜菁菁 | High peak power 1550nm semiconductor laser diode chip |
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
| CN112038887A (en) * | 2020-09-14 | 2020-12-04 | 厦门市三安集成电路有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN114374146A (en) * | 2020-10-15 | 2022-04-19 | 山东华光光电子股份有限公司 | GaAs-based 915nm/976nm high-power dual-wavelength laser epitaxial wafer and preparation method thereof |
| CN112736644B (en) * | 2021-03-30 | 2021-06-11 | 南昌凯捷半导体科技有限公司 | High-power VCSEL for vehicle-mounted radar and preparation method thereof |
| CN114300943B (en) * | 2021-12-30 | 2022-10-18 | 北京工业大学 | Electro-absorption active modulation spontaneous pulse type photon cascade semiconductor laser and preparation method thereof |
| CN114006268B (en) * | 2022-01-04 | 2022-04-22 | 苏州长光华芯光电技术股份有限公司 | Multi-active-region semiconductor structure and preparation method thereof |
| CN114649742B (en) * | 2022-05-19 | 2023-07-07 | 福建慧芯激光科技有限公司 | Efficient vertical cavity surface EML chip and preparation method thereof |
| CN116031752B (en) * | 2023-03-30 | 2023-07-25 | 苏州长光华芯光电技术股份有限公司 | Semiconductor light-emitting structure and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208757A (en) * | 2011-04-28 | 2011-10-05 | 长春理工大学 | High-wavelength antimonide semiconductor laser structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200463A (en) * | 2002-12-19 | 2004-07-15 | Osaka Industrial Promotion Organization | Semiconductor laser element |
| US8929417B2 (en) * | 2009-12-21 | 2015-01-06 | The Board Of Regents Of The University Of Oklahoma | Semiconductor interband lasers and method of forming |
-
2013
- 2013-01-25 CN CN201310029832.1A patent/CN103078252B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208757A (en) * | 2011-04-28 | 2011-10-05 | 长春理工大学 | High-wavelength antimonide semiconductor laser structure |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2004-200463A 2004.07.15 |
| 邹永刚 等.锑化物中红外半导体激光器研究进展.《长春理工大学学报（自然科学版）》.2011,第34卷(第3期), * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103078252A (en) | 2013-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103078252B (en) | Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof | |
| Chow et al. | Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices | |
| KR101352654B1 (en) | Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier | |
| CN103165727B (en) | It is infrared to conversion equipment in visible wavelength and preparation method thereof that N-type is injected | |
| Ray et al. | Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells | |
| JP2011142293A (en) | Diode-based device and method of manufacturing the same | |
| CN103326242B (en) | Laser active district, semiconductor laser and preparation method thereof | |
| CN108736316A (en) | Make the method and vertical cavity surface emitting laser of vertical cavity surface emitting laser | |
| CN100391069C (en) | Device structure and its production for single-modulus quantum cascade laser | |
| Park et al. | Surface passivation and aging of InGaAs/InP heterojunction phototransistors | |
| CN103401144B (en) | Infrared semiconductor laser active area, semiconductor laser and preparation method thereof | |
| US4365260A (en) | Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material | |
| CN103560395A (en) | Semi-conductor laser device capable of outputting double-wavelength laser for optical mixing to generate THz waves and manufacturing method | |
| CN108054634A (en) | A kind of narrow linewidth semiconductor laser | |
| CN100364193C (en) | Non-aluminium 1.3 micron indium arsenic/gallium arsenic quantum point laser | |
| CN101630812B (en) | Fin integrated type infrared semiconductor laser structure | |
| CN109768136A (en) | A kind of LED epitaxial slice and its growing method | |
| CN108923257B (en) | Laser diode and preparation method thereof | |
| Li et al. | Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs] | |
| CN101447485B (en) | Structure of single chip integrated GaAs-based PHEMT and PIN diode material | |
| Lv et al. | Significantly improved performances of 1.3 μm InAs/GaAs QD laser by spatially separated dual-doping | |
| US4270094A (en) | Semiconductor light emitting device | |
| CN104037618B (en) | GaAs-based near-infrared band Sb multi-layer quantum dot and asymmetric quantum well coupled laser structure | |
| US20040259284A1 (en) | Method of increasing the luminescent bandwidth of photoelectric semiconductor device by separate confinement heterostructure | |
| Moiseev et al. | Electroluminescence and photoelectric properties of type II broken-gap n-In (Ga) As (Sb)/N-GaSb heterostructures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Xing Junliang Inventor after: Niu Zhichuan Inventor after: Zhang Yu Inventor after: Wang Guowei Inventor after: Xu Yingqiang Inventor after: Ren Zhengwei Inventor after: Wang Juan Inventor after: Wang Lijuan Inventor before: Xing Junliang Inventor before: Zhang Yu Inventor before: Wang Guowei Inventor before: Wang Juan Inventor before: Wang Lijuan Inventor before: Ren Zhengwei Inventor before: Xu Yingqiang Inventor before: Niu Zhichuan |