CN103077952B - A kind of manufacture method of image sensor - Google Patents
A kind of manufacture method of image sensor Download PDFInfo
- Publication number
- CN103077952B CN103077952B CN201310011790.9A CN201310011790A CN103077952B CN 103077952 B CN103077952 B CN 103077952B CN 201310011790 A CN201310011790 A CN 201310011790A CN 103077952 B CN103077952 B CN 103077952B
- Authority
- CN
- China
- Prior art keywords
- device wafers
- radio
- backside surface
- image sensor
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to a kind of manufacture method of image sensor, comprise the grinding of device wafers evenness, the bonding of device wafers, device wafers thinning back side, device wafers backside surface grinds, deposit, colored filter and lenticular installation, the radio-frequency drive decoupling combination plasma oxide that described device wafers backside surface process adopts radio freqnency generator to send produces plasma and carries out defect processing to device wafers backside surface, and the radio-frequency power of described radio freqnency generator is lower than 200 watts.In the manufacture process of backside illuminated image transducer, the radio frequency utilizing radio freqnency generator to send produces plasma to decoupling combination plasma oxide and carries out defect processing to device wafers backside surface, reduce device wafers backside surface defect, improve the performance of device.
Description
Technical field
The present invention relates to image sensor and manufacture field, be specifically related to a kind of manufacture method of image sensor.
Background technology
In the manufacture process of backside illuminated image transducer, the back side of wafer is needed to carry out thinning, and utilize surface treatment to avoid blemish to carry out the performance of improving product, the process of device wafers backside surface is very crucial to the quality of image sensor, if there is blemish, it can cause the generation of dark current and white pixel, and existing technique uses the method for steam oxidation thing to carry out surface treatment, although there is certain effect, but still there is very large defect in wafer rear, the performance of follow-up technique and device is all had a great impact, this just requires to need very large room for promotion to wafer rear surface treatment.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of manufacture method affecting transducer, and the radio frequency utilizing radio freqnency generator to send produces plasma to decoupling combination plasma oxide and carries out defect processing to device wafers backside surface.
3. the technical scheme that solves the problems of the technologies described above of the present invention is as follows: a kind of manufacture method of image sensor, comprise the grinding of device wafers evenness, the bonding of device wafers, device wafers thinning back side, device wafers backside surface grinds, the high dielectric layer deposition in device wafers surface, colored filter and lenticular installation, the radio-frequency drive decoupling combination plasma oxide that described device wafers backside surface grinding adopts radio freqnency generator to send produces plasma and carries out defect processing to device wafers backside surface, the radio frequency power range of described radio freqnency generator is 150 ~ 200 watts.
The invention has the beneficial effects as follows: in the manufacture process of backside illuminated image transducer, the radio frequency utilizing radio freqnency generator to send produces plasma to decoupling combination plasma oxide and carries out defect processing to device wafers backside surface, reduce device wafers backside surface defect, improve the performance of device.
Accompanying drawing explanation
Fig. 1 is the manufacture method flow chart of a kind of image sensor of the present invention;
Fig. 2 is the manufacture method film etch rate of a kind of image sensor of the present invention and the coordinate diagram of radio-frequency power.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of manufacture method of image sensor, comprise the grinding of step 101 device wafers evenness, the bonding of step 102 device wafers, step 103 device wafers thinning back side, step 104 device wafers backside surface grinds, the high dielectric layer deposition in step 105 device wafers surface, step 106 colored filter and lenticular installation, the radio-frequency drive decoupling combination plasma oxide that described device wafers backside surface process adopts radio freqnency generator to send produces plasma and carries out defect processing to device wafers backside surface, consider the ability of equipment, selected radio-frequency power is 150 watts.
Fig. 2 is a kind of manufacture method film etch rate of image sensor and the coordinate diagram of radio-frequency power, and as can be seen from the figure, lower radio-frequency power, the etch rate of film is lower, thus can obtain finer and close film.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. the manufacture method of an image sensor, comprise the grinding of device wafers evenness, the bonding of device wafers, device wafers thinning back side, device wafers backside surface grinds, the high dielectric layer deposition in device wafers surface, colored filter and lenticular installation, it is characterized in that: the radio-frequency drive decoupling combination plasma oxide that described device wafers backside surface grinding adopts radio freqnency generator to send produces plasma and carries out defect processing to device wafers backside surface, and the radio frequency power range of described radio freqnency generator is 150 ~ 200 watts.
2. the manufacture method of a kind of image sensor according to claim 1, is characterized in that: the radio frequency power range of described radio freqnency generator is 150 watts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310011790.9A CN103077952B (en) | 2013-01-11 | 2013-01-11 | A kind of manufacture method of image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310011790.9A CN103077952B (en) | 2013-01-11 | 2013-01-11 | A kind of manufacture method of image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103077952A CN103077952A (en) | 2013-05-01 |
| CN103077952B true CN103077952B (en) | 2016-02-10 |
Family
ID=48154433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310011790.9A Active CN103077952B (en) | 2013-01-11 | 2013-01-11 | A kind of manufacture method of image sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103077952B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4962049A (en) * | 1989-04-13 | 1990-10-09 | Applied Materials, Inc. | Process for the plasma treatment of the backside of a semiconductor wafer |
| CN101752394A (en) * | 2008-12-08 | 2010-06-23 | 全视科技有限公司 | CMOS image sensor with improved backside surface treatment |
| CN102779826A (en) * | 2012-08-15 | 2012-11-14 | 豪威科技(上海)有限公司 | Backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100801447B1 (en) * | 2006-06-19 | 2008-02-11 | (주)실리콘화일 | A image sensor using back illumination photodiode and a method of manufacturing the same |
-
2013
- 2013-01-11 CN CN201310011790.9A patent/CN103077952B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4962049A (en) * | 1989-04-13 | 1990-10-09 | Applied Materials, Inc. | Process for the plasma treatment of the backside of a semiconductor wafer |
| CN101752394A (en) * | 2008-12-08 | 2010-06-23 | 全视科技有限公司 | CMOS image sensor with improved backside surface treatment |
| CN102779826A (en) * | 2012-08-15 | 2012-11-14 | 豪威科技(上海)有限公司 | Backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103077952A (en) | 2013-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201614725A (en) | Methods for high precision plasma etching of substrates | |
| CN102214555B (en) | Method for thinning sapphire wafer | |
| PH12014502088A1 (en) | Solar cell having an emitter region with wide bandgap semiconductor material | |
| CN103100965B (en) | InP single crystal wafer twin polishing method and device | |
| EP2590233A3 (en) | Photovoltaic device and method of manufacturing the same | |
| MY191131A (en) | Photovoltaic devices and method of manufacturing | |
| WO2011040781A3 (en) | Solar power generation apparatus and manufacturing method thereof | |
| CN105776879A (en) | Method for manufacturing thin glass substrate | |
| CN103870813A (en) | Fingerprint sensor and electronic equipment | |
| CN103077952B (en) | A kind of manufacture method of image sensor | |
| CN103077883A (en) | Method for repairing surface defect of wafer | |
| CN105161410A (en) | Trimming method for trimming seam defect of bonded wafer | |
| CN103065945A (en) | Image sensor wafer bonding method | |
| CN104746031A (en) | A sputtering system | |
| US20110308607A1 (en) | Group iii-v solar cell and method of manufacturing the same | |
| CN102943251B (en) | Device for enhancing uniformity of PECVD (plasma enhanced chemical vapour deposition) coating film | |
| MY162194A (en) | Oxygen getter layer for photovoltaic devices and methods of their manufacture | |
| CN103128650A (en) | Chemical mechanical polishing method | |
| CN103855911A (en) | Radiofrequency power source with digital adjustable radiofrequency signal phase | |
| CN104600159A (en) | High-frequency discharge preparation method of rejection PID crystalline silicon cell | |
| CN102610493A (en) | Method for removing amorphous carbon films for cyclically utilizing silicon chips | |
| CN104008946A (en) | Focusing ring for aluminum etching process and aluminum etching process | |
| CN104051574B (en) | The one graphite boat that makes moist removes moisture technique | |
| CN103531440A (en) | Surface repairing method for back side of wafer | |
| CN103871943A (en) | Electrostatic adsorption device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD. Free format text: FORMER OWNER: LU WEI Effective date: 20130711 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200124 PUDONG NEW AREA, SHANGHAI TO: 430205 WUHAN, HUBEI PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20130711 Address after: 430205 Wuhan Province, East Lake City Development Zone, No., No. four high road, No. 18 Applicant after: Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Address before: 200124, room 9, No. 905, Lane 301, Haiyang Road, Shanghai, Pudong New Area Applicant before: Lu Wei |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |