CN103077952A - Manufacturing method of image sensor - Google Patents
Manufacturing method of image sensor Download PDFInfo
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- CN103077952A CN103077952A CN2013100117909A CN201310011790A CN103077952A CN 103077952 A CN103077952 A CN 103077952A CN 2013100117909 A CN2013100117909 A CN 2013100117909A CN 201310011790 A CN201310011790 A CN 201310011790A CN 103077952 A CN103077952 A CN 103077952A
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- radio
- device wafer
- device wafers
- back surface
- image sensor
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000007547 defect Effects 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 15
- 238000009434 installation Methods 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract 1
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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Abstract
The invention relates to a manufacturing method of an image sensor. The manufacturing method comprises the following steps of: device wafer flatness grinding, device wafer bonding, device wafer back thinning, device wafer back surface grinding, sedimentting, color filter mounting and microlens mounting, wherein during the device wafer back surface treatment, radio-frequency drive emitted by a radio frequency generator is adopted to decouple a plasma oxide to generate plasma used for performing detect treatment on the back surface of a device wafer, and the radio-frequency power of the radio frequency generator is less than 200 watts; During the manufacturing process of a back-illumination imager sensor, radio frequency emitted by the radio frequency generator is utilized to the decoupled plasma oxide to generate the plasma used for performing defect treatment on the back surface of the device wafer, so that defects on the back surface of the device wafer are reduced, and the device performance is promoted.
Description
Technical field
The present invention relates to image sensor and make the field, be specifically related to a kind of manufacture method of image sensor.
Background technology
In the manufacture process of backside illuminated image transducer, attenuate need to be carried out in the back side of wafer, and utilize surface treatment to avoid blemish to come the performance of improving product, the processing of device wafers backside surface is very crucial to the quality of image sensor, if there is blemish, it can cause the generation of dark current and white pixel, that the method for steam oxidation thing is carried out surface treatment and existing technique is used, although certain effect is arranged, but still there is very large defective in wafer rear, follow-up technique and performance of devices are all had a great impact, and this just requires the wafer rear surface treatment is needed very large room for promotion.
Summary of the invention
Technical problem to be solved by this invention provides a kind of manufacture method that affects transducer, and the radio frequency that utilizes radio freqnency generator to send produces plasma to decoupling combination plasma oxide the device wafers backside surface is carried out defect processing.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of manufacture method of image sensor, comprise the grinding of device wafers evenness, the bonding of device wafers, the device wafers thinning back side, the device wafers backside surface grinds, the device wafers high dielectric layer deposit in surface, colored filter and lenticular installation, described device wafers backside surface grinds the radio-frequency drive decoupling combination plasma oxide generation plasma that adopts radio freqnency generator to send the device wafers backside surface is carried out defect processing, and the radio-frequency power scope of described radio freqnency generator is 100～200 watts.
The invention has the beneficial effects as follows: in the manufacture process of backside illuminated image transducer, the radio frequency that utilizes radio freqnency generator to send produces plasma to decoupling combination plasma oxide the device wafers backside surface is carried out defect processing, reduce device wafers backside surface defective, promoted performance of devices.
Description of drawings
Fig. 1 is the manufacture method flow chart of a kind of image sensor of the present invention;
Fig. 2 is the manufacture method film etch rate of a kind of image sensor of the present invention and the coordinate diagram of radio-frequency power.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
As shown in Figure 1, a kind of manufacture method of image sensor, comprise the grinding of step 101 device wafers evenness, the bonding of step 102 device wafers, step 103 device wafers thinning back side, step 104 device wafers backside surface grinds, the high dielectric layer deposit in surface of step 105 device wafers, step 106 colored filter and lenticular installation, described device wafers backside surface is processed the radio-frequency drive decoupling combination plasma oxide generation plasma that adopts radio freqnency generator to send the device wafers backside surface is carried out defect processing, consider the ability of equipment, selected radio-frequency power is 150 watts.
Fig. 2 is a kind of manufacture method film etch rate of image sensor and the coordinate diagram of radio-frequency power, as can be seen from the figure, lower radio-frequency power, the etch rate of film is lower, thereby can obtain finer and close film.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. the manufacture method of an image sensor, comprise the grinding of device wafers evenness, the bonding of device wafers, the device wafers thinning back side, the device wafers backside surface grinds, the device wafers high dielectric layer deposit in surface, colored filter and lenticular installation, it is characterized in that: described device wafers backside surface grinds the radio-frequency drive decoupling combination plasma oxide generation plasma that adopts radio freqnency generator to send the device wafers backside surface is carried out defect processing, and described radio-frequency power is lower than 200 watts.
2. the manufacture method of a kind of image sensor according to claim 1, it is characterized in that: the radio-frequency power scope of described radio freqnency generator is 100～200 watts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310011790.9A CN103077952B (en) | 2013-01-11 | 2013-01-11 | A kind of manufacture method of image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310011790.9A CN103077952B (en) | 2013-01-11 | 2013-01-11 | A kind of manufacture method of image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103077952A true CN103077952A (en) | 2013-05-01 |
| CN103077952B CN103077952B (en) | 2016-02-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310011790.9A Active CN103077952B (en) | 2013-01-11 | 2013-01-11 | A kind of manufacture method of image sensor |
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| Country | Link |
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| CN (1) | CN103077952B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4962049A (en) * | 1989-04-13 | 1990-10-09 | Applied Materials, Inc. | Process for the plasma treatment of the backside of a semiconductor wafer |
| US20090224345A1 (en) * | 2006-06-19 | 2009-09-10 | Siliconfile Technologies Inc. | Image sensor using back-illuminated photodiode and method of manufacturing the same |
| CN101752394A (en) * | 2008-12-08 | 2010-06-23 | 全视科技有限公司 | CMOS image sensor with improved backside surface treatment |
| CN102779826A (en) * | 2012-08-15 | 2012-11-14 | 豪威科技(上海)有限公司 | Backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor |
-
2013
- 2013-01-11 CN CN201310011790.9A patent/CN103077952B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4962049A (en) * | 1989-04-13 | 1990-10-09 | Applied Materials, Inc. | Process for the plasma treatment of the backside of a semiconductor wafer |
| US20090224345A1 (en) * | 2006-06-19 | 2009-09-10 | Siliconfile Technologies Inc. | Image sensor using back-illuminated photodiode and method of manufacturing the same |
| CN101752394A (en) * | 2008-12-08 | 2010-06-23 | 全视科技有限公司 | CMOS image sensor with improved backside surface treatment |
| CN102779826A (en) * | 2012-08-15 | 2012-11-14 | 豪威科技(上海)有限公司 | Backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor |
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| Publication number | Publication date |
|---|---|
| CN103077952B (en) | 2016-02-10 |
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Owner name: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD. Free format text: FORMER OWNER: LU WEI Effective date: 20130711 |
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Effective date of registration: 20130711 Address after: 430205 Wuhan Province, East Lake City Development Zone, No., No. four high road, No. 18 Applicant after: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Address before: 200124, room 9, No. 905, Lane 301, Haiyang Road, Shanghai, Pudong New Area Applicant before: Lu Wei |
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Address after: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |
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