A kind of manufacture method of image sensor
Technical field
The present invention relates to image sensor and make the field, be specifically related to a kind of manufacture method of image sensor.
Background technology
In the manufacture process of backside illuminated image transducer, attenuate need to be carried out in the back side of wafer, and utilize surface treatment to avoid blemish to come the performance of improving product, the processing of device wafers backside surface is very crucial to the quality of image sensor, if there is blemish, it can cause the generation of dark current and white pixel, that the method for steam oxidation thing is carried out surface treatment and existing technique is used, although certain effect is arranged, but still there is very large defective in wafer rear, follow-up technique and performance of devices are all had a great impact, and this just requires the wafer rear surface treatment is needed very large room for promotion.
Summary of the invention
Technical problem to be solved by this invention provides a kind of manufacture method that affects transducer, and the radio frequency that utilizes radio freqnency generator to send produces plasma to decoupling combination plasma oxide the device wafers backside surface is carried out defect processing.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of manufacture method of image sensor, comprise the grinding of device wafers evenness, the bonding of device wafers, the device wafers thinning back side, the device wafers backside surface grinds, the device wafers high dielectric layer deposit in surface, colored filter and lenticular installation, described device wafers backside surface grinds the radio-frequency drive decoupling combination plasma oxide generation plasma that adopts radio freqnency generator to send the device wafers backside surface is carried out defect processing, and the radio-frequency power scope of described radio freqnency generator is 100~200 watts.
The invention has the beneficial effects as follows: in the manufacture process of backside illuminated image transducer, the radio frequency that utilizes radio freqnency generator to send produces plasma to decoupling combination plasma oxide the device wafers backside surface is carried out defect processing, reduce device wafers backside surface defective, promoted performance of devices.
Description of drawings
Fig. 1 is the manufacture method flow chart of a kind of image sensor of the present invention;
Fig. 2 is the manufacture method film etch rate of a kind of image sensor of the present invention and the coordinate diagram of radio-frequency power.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
As shown in Figure 1, a kind of manufacture method of image sensor, comprise the grinding of step 101 device wafers evenness, the bonding of step 102 device wafers, step 103 device wafers thinning back side, step 104 device wafers backside surface grinds, the high dielectric layer deposit in surface of step 105 device wafers, step 106 colored filter and lenticular installation, described device wafers backside surface is processed the radio-frequency drive decoupling combination plasma oxide generation plasma that adopts radio freqnency generator to send the device wafers backside surface is carried out defect processing, consider the ability of equipment, selected radio-frequency power is 150 watts.
Fig. 2 is a kind of manufacture method film etch rate of image sensor and the coordinate diagram of radio-frequency power, as can be seen from the figure, lower radio-frequency power, the etch rate of film is lower, thereby can obtain finer and close film.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.