CN103066181A - Led芯片及制造方法 - Google Patents
Led芯片及制造方法 Download PDFInfo
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- CN103066181A CN103066181A CN2012105875833A CN201210587583A CN103066181A CN 103066181 A CN103066181 A CN 103066181A CN 2012105875833 A CN2012105875833 A CN 2012105875833A CN 201210587583 A CN201210587583 A CN 201210587583A CN 103066181 A CN103066181 A CN 103066181A
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CN201210587583.3A CN103066181B (zh) | 2012-12-28 | 2012-12-28 | Led芯片及制造方法 |
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CN201210587583.3A CN103066181B (zh) | 2012-12-28 | 2012-12-28 | Led芯片及制造方法 |
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CN103066181A true CN103066181A (zh) | 2013-04-24 |
CN103066181B CN103066181B (zh) | 2016-03-09 |
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CN201210587583.3A Expired - Fee Related CN103066181B (zh) | 2012-12-28 | 2012-12-28 | Led芯片及制造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110970532A (zh) * | 2018-09-28 | 2020-04-07 | 丁肇诚 | 可提升巨量转移良率的微发光二极管 |
CN111106221A (zh) * | 2018-10-28 | 2020-05-05 | 广东众元半导体科技有限公司 | 一种圆片级深紫外led的封装方式 |
CN114188447A (zh) * | 2020-09-14 | 2022-03-15 | 厦门乾照光电股份有限公司 | 一种具有平坦化绝缘层的led芯片及其制作方法 |
CN114420797A (zh) * | 2021-12-03 | 2022-04-29 | 深圳市思坦科技有限公司 | 倒装led芯片的制备方法、倒装led芯片以及显示设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101154697A (zh) * | 2006-09-30 | 2008-04-02 | 香港微晶先进封装技术有限公司 | 发光二极管芯片及其制造方法 |
CN101350381A (zh) * | 2007-07-18 | 2009-01-21 | 晶科电子(广州)有限公司 | 凸点发光二极管及其制造方法 |
US20100148202A1 (en) * | 2008-12-12 | 2010-06-17 | Sony Corporation | Semiconductor light-emitting device and method for manufacturing the same |
US20110014734A1 (en) * | 2009-07-20 | 2011-01-20 | Lu Lien-Shine | Method for fabricating flip chip gallium nitride light emitting diode |
CN202977518U (zh) * | 2012-12-28 | 2013-06-05 | 北京半导体照明科技促进中心 | Led芯片 |
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2012
- 2012-12-28 CN CN201210587583.3A patent/CN103066181B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101154697A (zh) * | 2006-09-30 | 2008-04-02 | 香港微晶先进封装技术有限公司 | 发光二极管芯片及其制造方法 |
CN101350381A (zh) * | 2007-07-18 | 2009-01-21 | 晶科电子(广州)有限公司 | 凸点发光二极管及其制造方法 |
US20100148202A1 (en) * | 2008-12-12 | 2010-06-17 | Sony Corporation | Semiconductor light-emitting device and method for manufacturing the same |
US20110014734A1 (en) * | 2009-07-20 | 2011-01-20 | Lu Lien-Shine | Method for fabricating flip chip gallium nitride light emitting diode |
CN202977518U (zh) * | 2012-12-28 | 2013-06-05 | 北京半导体照明科技促进中心 | Led芯片 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110970532A (zh) * | 2018-09-28 | 2020-04-07 | 丁肇诚 | 可提升巨量转移良率的微发光二极管 |
CN110970532B (zh) * | 2018-09-28 | 2021-10-22 | 丁肇诚 | 可提升巨量转移良率的微发光二极管 |
CN111106221A (zh) * | 2018-10-28 | 2020-05-05 | 广东众元半导体科技有限公司 | 一种圆片级深紫外led的封装方式 |
CN114188447A (zh) * | 2020-09-14 | 2022-03-15 | 厦门乾照光电股份有限公司 | 一种具有平坦化绝缘层的led芯片及其制作方法 |
CN114420797A (zh) * | 2021-12-03 | 2022-04-29 | 深圳市思坦科技有限公司 | 倒装led芯片的制备方法、倒装led芯片以及显示设备 |
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Publication number | Publication date |
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CN103066181B (zh) | 2016-03-09 |
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C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Cui Chengqiang Inventor after: Liang Runyuan Inventor after: Wei Jia Inventor after: Yuan Changan Inventor after: Zhang Guoqi Inventor before: Cui Chengqiang Inventor before: Liang Runyuan Inventor before: Wei Jia Inventor before: Yuan Changan |
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Free format text: CORRECT: INVENTOR; FROM: CUI CHENGQIANG LIANG RUNYUAN WEI JIA YUAN CHANGAN TO: CUI CHENGQIANG LIANG RUNYUAN WEI JIA YUAN CHANGAN ZHANG GUOQI |
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Granted publication date: 20160309 Termination date: 20211228 |
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