CN103066152A - Positive electrode screen printing plate manufacturing method applicable to solar energy high sheet resistance battery - Google Patents
Positive electrode screen printing plate manufacturing method applicable to solar energy high sheet resistance battery Download PDFInfo
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- CN103066152A CN103066152A CN2012105478665A CN201210547866A CN103066152A CN 103066152 A CN103066152 A CN 103066152A CN 2012105478665 A CN2012105478665 A CN 2012105478665A CN 201210547866 A CN201210547866 A CN 201210547866A CN 103066152 A CN103066152 A CN 103066152A
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Abstract
The invention relates to a positive electrode screen printing plate manufacturing method applicable to a solar energy high sheet resistance battery. The positive electrode screen printing plate manufacturing method applicable to the solar energy high sheet resistance battery is characterized by comprising the following steps. First, a fabric surface is manufactured on the surface of a silicon slice. Afterwards, after being cleared, the silicon slice is placed inside a diffusion furnace to conduct a diffusion working procedure, and a high sheet resistance emitter junction is formed on the surface of the silicon slice. Then, a silicon slice edge knot is eliminated, and a silicon nitride film is manufactured on the surface of the high sheet resistance emitter junction. Finally, an electrode and an electric field are conducted with cofiring treatment and grid line printing. According to the positive electrode screen printing plate manufacturing method applicable to the solar energy high sheet resistance battery, a printing pattern of unequal separation distance grid lines is designed, the problems that series resistance consumption in a center high sheet resistance value area is large and shading in an edge low sheet resistance area is consumed are solved, and the battery piece efficiency is improved. Simultaneously, relying on the fact that a grid line variation area exists, the unit consumption in the process of printing can be lowered, and sizing agents are saved. Furthermore, the positive electrode screen printing plate manufacturing method applicable to the solar energy high sheet resistance battery is simple in integral construction and prone to flow line production and popularization.
Description
Technical field
The present invention relates to a kind of positive electrode half tone manufacture method, relate in particular to a kind of positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery.
Background technology
With regard to existing photovoltaic industry, in the crystal silicon solar sheet effect of positive electrode gate line electrode huge, it serves as the effect of collecting photo-generated carrier.Simultaneously, for common P mold base crystal silicon battery, what (size of series resistance) have determined the quality of the electric property of cell piece to a great extent for what (sizes of short circuit current) and the loss of charge carrier in collection process of the generation of charge carrier.
Simultaneously, improving battery efficiency mainly is to cooperate the high square resistance emitter junction to reach by close grid line positive electrode design: high square resistance mainly is to improve blue response, but because sheet resistance is high, the lateral resistance of grid line increases, take close grid line printing to reduce the loss of lateral resistance, reach the purpose of raising efficiency.
The photovoltaic corporate boss will adopt the POCL3 liquid source to spread to prepare the high square resistance emitter junction both at home and abroad, adopts the high square resistance emitter junction uniformity of the method preparation relatively poor, and the center is more much larger than the regional sheet resistance value in edge in the sheet; As adopting common close grid line half tone design, the larger regional series resistance losses of central party resistance is large, and shading loss in edge is larger, so that the improved efficiency of monoblock cell piece is not obvious.
Summary of the invention
Purpose of the present invention is exactly in order to solve the above-mentioned problems in the prior art, and a kind of positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery is provided.
Purpose of the present invention is achieved through the following technical solutions:
Be applicable to the positive electrode half tone manufacture method of solar energy high square resistance battery, it may further comprise the steps: 1. step makes matte at silicon chip surface; Step 2., to silicon chip carry out clear after, silicon chip inserted carries out diffusing procedure in the diffusion furnace, form the high square resistance emitter junction at silicon chip surface; 3. step removes silicon chip limit knot; 4. step makes silicon nitride film on high square resistance emitter junction surface; Step 5., electrode, electric field burn processing altogether; 6. step carries out the grid line printing.
The above-mentioned positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery, wherein: described step is made matte by nitric acid, hydrofluoric acid mixed solution or sodium hydroxide solution in 1..
Further, the above-mentioned positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery, wherein: step 2. middle hydrochloric acid, the hydrofluoric acid solution of adopting is cleaned, diffusing procedure is, temperature is 800～900 ℃, passing into gas is nitrogen, oxygen, phosphorus oxychloride mist, and the processing time is 30-90 minute, forms 65-100 Ω/sqr high square resistance emitter junction at silicon chip surface.
Further, the above-mentioned positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery, wherein: described step utilizes in 3. wet etching or plasma etching equipment to remove silicon chip limit knot.
Further, the above-mentioned positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery, wherein: the described step 4. middle PECVD of employing equipment is made silicon nitride film on high square resistance emitter junction surface, and thickness is 80-90um, and refractive index is 2.0-2.15.
Further, the above-mentioned positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery, wherein: described step adopt in 5. the screen printing apparatus preparation just, backplate and back surface field, carry out electrode, electric field by sintering furnace and burn altogether processing.
Further, the above-mentioned positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery, wherein: described step is the middle higher zone of sheet resistance value, silicon chip center 6., adopt intensive grid line printed pattern, the lower zone of silicon chip edge prescription resistance, adopt time close grid line printed pattern, the radical of described intensive grid line is greater than inferior close grid line, and described intensive grid line spacing each other is less than inferior close grid line spacing each other.
Further, the above-mentioned positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery, wherein: described close grid line printed pattern adopts and reduces one by one the mode of grating spacing to intensive grid line printed pattern transition.
Again further, the above-mentioned positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery, wherein: described inferior close grid line printed pattern and intensive grid line printed pattern all are divided into 1-10 zone, and different grating spacing is all adopted in each zone.
The advantage of technical solution of the present invention is mainly reflected in: according to the relatively poor characteristic of the uniformity of high square resistance emitter junction, the printed pattern of design unequal-interval grid line, solve the center high square resistance value zone larger problem of series resistance losses and edge low square resistance zone shading loss problem, improved cell piece efficient.Simultaneously, rely on the existence of grid line region of variation, the unit consumption in the time of can having reduced printing is saved slurry.Moreover unitary construction of the present invention is simple, is easy to streamline production and promotes.
Description of drawings
Purpose of the present invention, advantage and disadvantage will be for illustration and explanation by the non-limitative illustration of following preferred embodiment.These embodiment only are the prominent examples of using technical solution of the present invention, and all technical schemes of taking to be equal to replacement or equivalent transformation and forming all drop within the scope of protection of present invention.In the middle of these accompanying drawings,
Fig. 1 is the organigram that grid line is equidistant distribution in the grid line region of variation;
Fig. 2 is the organigram that grid line is the equal difference change profile in the grid line region of variation.
1 grid line region of variation
Embodiment
The positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery as shown in Figure 1 and Figure 2 is characterized in that may further comprise the steps: at first, make matte by nitric acid, hydrofluoric acid mixed solution or sodium hydroxide solution at silicon chip surface.Afterwards, to silicon chip carry out clear after, silicon chip inserted carries out diffusing procedure in the diffusion furnace, form the high square resistance emitter junction at silicon chip surface.During this period, adopt hydrochloric acid, hydrofluoric acid solution to clean, diffusing procedure is, temperature is 800～900 ℃, passing into gas is nitrogen, oxygen, phosphorus oxychloride mist, and the processing time is 30-90 minute, forms 65-100 Ω/sqr high square resistance emitter junction at silicon chip surface.Afterwards, utilize wet etching or plasma etching equipment to remove silicon chip limit knot.Then, adopt PECVD equipment to make silicon nitride film on high square resistance emitter junction surface, thickness is 80-90um, and refractive index is 2.0-2.15.Then, adopt the screen printing apparatus preparation just, backplate and back surface field, carry out electrode, electric field by sintering furnace and burn altogether processing.At last, carry out the grid line printing.
With regard to the better execution mode of the present invention one, intensive grid line printed pattern is adopted in the higher zone of sheet resistance value, silicon chip center, and time close grid line printed pattern is adopted in the lower zone of silicon chip edge prescription resistance.And the radical of intensive grid line is greater than inferior close grid line, and intensive grid line spacing each other is less than inferior close grid line spacing each other.
Further, consider better high square resistance distribution mode, promote operating efficiency, inferior close grid line printed pattern adopts and reduces one by one the mode of grating spacing to intensive grid line printed pattern transition.Specifically can be as shown in Figure 1, can form grid line region of variation 1 on the positive electrode half tone, the grid line in this zone is equidistant distribution, wherein spacing d1＞spacing d2.
Certainly, perfect in order to ensure transition, inferior close grid line printed pattern and intensive grid line printed pattern all can be divided into 1-10 zone.Like this, different grating spacing is all adopted in each zone, improves whole structure.Specifically can be as shown in Figure 2, can form grid line region of variation 1 on the positive electrode half tone, the grating spacing in this zone is equal difference and changes, wherein d1＞dm; D1＞dm-1; Difference+the dm-1 of dm=grating spacing.
Can find out by above-mentioned character express, after adopting the present invention, according to the relatively poor characteristic of the uniformity of high square resistance emitter junction, the printed pattern of design unequal-interval grid line, solve the center high square resistance value zone larger problem of series resistance losses and edge low square resistance zone shading loss problem, improved cell piece efficient.Simultaneously, rely on the existence of grid line region of variation, the unit consumption in the time of can having reduced printing is saved slurry.Moreover unitary construction of the present invention is simple, is easy to streamline production and promotes.
Claims (9)
1. be applicable to the positive electrode half tone manufacture method of solar energy high square resistance battery, it is characterized in that may further comprise the steps:
1. step makes matte at silicon chip surface;
Step 2., to silicon chip carry out clear after, silicon chip inserted carries out diffusing procedure in the diffusion furnace, form the high square resistance emitter junction at silicon chip surface;
3. step removes silicon chip limit knot;
4. step makes silicon nitride film on high square resistance emitter junction surface;
Step 5., electrode, electric field burn processing altogether;
6. step carries out the grid line printing.
2. the positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery according to claim 1 is characterized in that: described step is made matte by nitric acid, hydrofluoric acid mixed solution or sodium hydroxide solution in 1..
3. the positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery according to claim 1, it is characterized in that: step 2. middle hydrochloric acid, the hydrofluoric acid solution of adopting is cleaned, diffusing procedure is, temperature is 800～900 ℃, passing into gas is nitrogen, oxygen, phosphorus oxychloride mist, processing time is 30-90 minute, forms 65-100 Ω/sqr high square resistance emitter junction at silicon chip surface.
4. the positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery according to claim 1 is characterized in that: described step utilizes wet etching or plasma etching equipment to remove silicon chip limit knot in 3..
5. the positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery according to claim 1, it is characterized in that: the described step 4. middle PECVD of employing equipment is made silicon nitride film on high square resistance emitter junction surface, thickness is 80-90um, and refractive index is 2.0-2.15.
6. the positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery according to claim 1, it is characterized in that: described step adopt in 5. the screen printing apparatus preparation just, backplate and back surface field, carry out electrode, electric field by sintering furnace and burn altogether processing.
7. the positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery according to claim 1, it is characterized in that: described step is the middle higher zone of sheet resistance value, silicon chip center 6., adopt intensive grid line printed pattern, the lower zone of silicon chip edge prescription resistance, adopt time close grid line printed pattern, the radical of described intensive grid line is greater than inferior close grid line, and described intensive grid line spacing each other is less than inferior close grid line spacing each other.
8. the positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery according to claim 7 is characterized in that: described close grid line printed pattern adopts and reduces one by one the mode of grating spacing to intensive grid line printed pattern transition.
9. the positive electrode half tone manufacture method that is applicable to solar energy high square resistance battery according to claim 7, it is characterized in that: described inferior close grid line printed pattern and intensive grid line printed pattern all are divided into 1-10 zone, and different grating spacing is all adopted in each zone.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103587225A (en) * | 2013-10-24 | 2014-02-19 | 江西合力泰科技股份有限公司 | Film typesetting method capable of increasing printing yield |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157613A (en) * | 2011-01-26 | 2011-08-17 | 欧贝黎新能源科技股份有限公司 | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof |
| JP2011201055A (en) * | 2010-03-24 | 2011-10-13 | Panasonic Corp | Device and method for printing screen |
| CN202219636U (en) * | 2011-09-08 | 2012-05-16 | 浙江向日葵光能科技股份有限公司 | Novel screen printing positive electrode screen |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011201055A (en) * | 2010-03-24 | 2011-10-13 | Panasonic Corp | Device and method for printing screen |
| CN102157613A (en) * | 2011-01-26 | 2011-08-17 | 欧贝黎新能源科技股份有限公司 | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof |
| CN202219636U (en) * | 2011-09-08 | 2012-05-16 | 浙江向日葵光能科技股份有限公司 | Novel screen printing positive electrode screen |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103587225A (en) * | 2013-10-24 | 2014-02-19 | 江西合力泰科技股份有限公司 | Film typesetting method capable of increasing printing yield |
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Address after: 215542 1 Tenghui Road, Chang Kun Industrial Park, Sha Jia Bang, Changshou City, Jiangsu Patentee after: Suzhou Tenghui Photovoltaic Technology Co., Ltd. Address before: 215542 1 Tenghui Road, Chang Kun Industrial Park, Sha Jia Bang, Changshou City, Jiangsu Patentee before: Zhongli Talesun Solar Technology Co., Ltd. |