CN103065942A - Method for controlling quirk corrosion formative semi-conducting film thickness and semiconductor structure - Google Patents
Method for controlling quirk corrosion formative semi-conducting film thickness and semiconductor structure Download PDFInfo
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Abstract
The invention discloses a method for controlling quirk corrosion formative semi-conducting film thickness and a semiconductor structure. A measuring groove is formed at the first face of a semiconductor wafer, and a transparent protective layer is formed in the measuring groove, and therefore in the process of forming the semi-conducting film in follow-up corrosion, wafer material at the bottom portion of the measuring groove is corroded to show the transparent protective layer. Height difference of the transparent protective layer and the surface of the semi-conducting film is obtained according to a limited reference plane of the bottom portion of the transparent protective layer, current thickness of the semi-conducting film is obtained accurately according to depth of the measuring groove and the height difference, and therefore the semi-conducting film is obtained by further controlling corrosion parameter to corrode. Through the method for controlling quirk corrosion formative semi-conducting film thickness and the semiconductor structure, the problem that thickness of the semi-conducting film is difficult to monitor and measure caused by the semi-conducting wafer thickness error is overcome.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method and semiconductor structure of controlling the semiconductor film thickness of deep groove etching formation.
Background technology
In the semiconductor chip manufacture process, for example in the manufacture process of semiconductor pressure sensor, need to be by making the very thin semiconductor film of one deck in chamber of corrosion, the corresponding region of semiconductor wafer back chip, the thickness of this semiconductor film is generally about 10 microns.Semiconductor film can be used for induction pressure or other external parameter, and thus, can the sensitivity of transducer depend on the thickness that control accurately semiconductor film to a great extent.In the prior art, the degree of depth in the chamber by measuring semiconductor crystal wafer thickness and corrosion is calculated the thickness of semiconductor film usually.
But because wafer production technology, the thickness difference between the different semiconductor crystal wafers is more than ± 5 microns.And, also can be at the material layer of deposit gross thickness more than 1 micron on the silicon chip in the production process of wafer production, this can further bring error for silicon wafer thickness.The error meeting of silicon wafer thickness so that in the production process of semiconductor film structure the control of etching process very difficult, thereby cause being difficult to accurately to control the semiconductor film thickness that deep groove etching forms.
Summary of the invention
Technical problem solved by the invention provides a kind of method and semiconductor structure of controlling the semiconductor film thickness of deep groove etching formation.
The invention discloses a kind of method of controlling the semiconductor film thickness of deep groove etching formation, comprising:
Make the measuring flume that at least one has first degree of depth at the first surface of semiconductor crystal wafer; Wherein, described first degree of depth is greater than the expectation thickness of described semiconductor film;
In described measuring flume, form protective clear layer;
Carry out deep groove etching in zone and zone corresponding to described measuring flume that the above semiconductor film of second surface of semiconductor crystal wafer is corresponding, to form described semiconductor film; Wherein, described second surface is relative with described first surface, and described deep groove etching so that described protective clear layer expose;
Measure difference in height between the semiconductor film surface that described protective clear layer and corrosion form from the second surface of semiconductor crystal wafer;
Calculate the current thickness of described semiconductor film according to the difference of described first degree of depth and described difference in height;
Current thickness according to described semiconductor film further corrodes so that the thickness of semiconductor film reaches described expectation thickness zone corresponding to described semiconductor film.
Preferably, described method also comprises behind the deposit transparent protective layer, forms metal level at described protective clear layer.
Preferably, the zone corresponding with described measuring flume, the zone that described semiconductor film is corresponding has a common boundary;
The difference in height that described second surface from semiconductor crystal wafer is measured between the semiconductor film surface that described protective clear layer and corrosion form comprises:
Directly measure the height of described protective clear layer and semiconductor film intersection terraced structure.
Preferably, the zone isolation that the zone that described semiconductor film is corresponding is corresponding with described measuring flume;
The difference in height that described second surface from semiconductor crystal wafer is measured between the semiconductor film surface that described protective clear layer and corrosion form comprises:
Measure crystal column surface to second degree of depth of protective clear layer from the second surface of semiconductor crystal wafer;
Measure crystal column surface to the 3rd degree of depth on described semiconductor film surface from the second surface of semiconductor crystal wafer;
The described difference in height of poor acquisition according to the 3rd degree of depth and second degree of depth.
Preferably, measuring the use step instrument carries out.
Preferably, described first surface at semiconductor crystal wafer is made at least one measuring flume with first degree of depth and is comprised:
Equally distributed diverse location is made a plurality of measuring flumes with first degree of depth on described semiconductor crystal wafer.
Preferably, described semiconductor crystal wafer is Silicon Wafer, and described protective clear layer is silicon nitride or silica.
The invention also discloses a kind of semiconductor structure of controlling the semiconductor film thickness of deep groove etching formation, comprising:
Be formed on the measuring flume with first degree of depth on the first surface of semiconductor crystal wafer, wherein, described first degree of depth is greater than the expectation thickness of described semiconductor film, and described first surface is relative with the second surface that will carry out deep groove etching;
Be formed on the protective clear layer in the measuring flume.
Preferably, also comprise the metal level that is formed on the protective clear layer.
Preferably, the zone corresponding with described measuring flume, the zone that described semiconductor film is corresponding has a common boundary; Perhaps
The zone isolation that the zone that described semiconductor film is corresponding is corresponding with described measuring flume.
The present invention makes for the measuring flume of measuring semiconductor film thickness in advance by the front at semiconductor crystal wafer, so that can be take measuring flume as reference monitoring corrosion progress in the technical process of corrosion formation semiconductor film, simultaneously, measure the thickness of the semiconductor film that corrosion forms according to the counter structure of measuring flume, overcome because the semiconductor film thickness that causes of semiconductor crystal wafer thickness error is difficult to the problem monitoring and measure.
Description of drawings
Fig. 1 is the flow chart of the method for the semiconductor film thickness that forms of the control deep groove etching of first embodiment of the invention;
Fig. 2 is the flow chart of the method for the semiconductor film thickness that forms of example control deep groove etching that the present invention second implements;
Fig. 3 a-Fig. 3 c is the schematic cross-section of semiconductor crystal wafer after the different step in the second embodiment of the invention;
Fig. 4 is the schematic cross-section of the Silicon Wafer after the corrosion in preferred implementation of second embodiment of the invention;
Fig. 5 is the flow chart of the method for the semiconductor film thickness that forms of the control deep groove etching of third embodiment of the invention;
Fig. 6 is the schematic cross-section of the Silicon Wafer after the corrosion in the preferred implementation of third embodiment of the invention;
Fig. 7 is the structural representation of the semiconductor structure of the semiconductor film thickness that forms of the control deep groove etching of fourth embodiment of the invention.
Embodiment
Further specify technical scheme of the present invention below in conjunction with accompanying drawing and by embodiment.
Fig. 1 is the flow chart of the method for the semiconductor film thickness that forms of the control deep groove etching of first embodiment of the invention.As shown in Figure 1, described method comprises:
The expectation thickness that the degree of depth of measuring flume is set to greater than semiconductor film is to form in the process of semiconductor film in corrosion for follow-up, when the degree of depth of corrosion approaches the semiconductor film that forms expectation thickness, the wafer material of measuring flume bottom all is corroded, and whether has approached expectation thickness thereby be convenient to observe semiconductor film.And so that have difference in height between the semiconductor film that measuring flume and preliminary corrosion obtain, this difference in height can be used for calculating the thickness of the semiconductor film that preliminary corrosion obtains to the measuring flume degree of depth than conference.
Protective clear layer uses the material of the corrosion that is not corroded to form; its role is to provide for the bottom of measuring flume the structure of the technique corrosion that is not corroded, so that the follow-up thickness that can calculate semiconductor film to the distance of crystal column surface to distance and the semiconductor film surface of crystal column surface by measuring the measuring flume surface.Secondly, after protective clear layer prevented that the material at the measuring flume structure back side is etched, etching liquid was penetrated into first surface from the second surface of wafer and causes wafer to damage.Simultaneously, protective layer is set to transparent, be in manufacture process can by check zone corresponding to measuring flume whether printing opacity observe this protective layer and whether corroded and expose, thereby convenient in etching process, the time of control corrosion.
Tentatively corrode and form the semiconductor film with current thickness, simultaneously, this corrosion so that protective clear layer expose, thereby the thickness of conveniently observing semiconductor film has approached expectation thickness.
After measuring and calculate the thickness that obtains the semiconductor film that preliminary corrosion obtains, reach expectation thickness thereby both can the thickness that technological parameter further corrodes the control semiconductor film be set according to current thickness and expectation thickness.The step of this measurement-calculating-corrosion can be as required repeatedly to obtain needed precision.
Present embodiment is made for the measuring flume of measuring semiconductor film thickness in advance by the front at semiconductor crystal wafer, so that can be take measuring flume as reference monitoring corrosion progress in the technical process of corrosion formation semiconductor film, simultaneously, measure the thickness of the semiconductor film that corrosion forms according to the counter structure of measuring flume, overcome because the semiconductor film thickness that causes of semiconductor crystal wafer thickness error is difficult to the problem monitoring and measure.
Fig. 2 is the flow chart of the method for the semiconductor film thickness that forms of second embodiment of the invention control deep groove etching.Second embodiment of the invention is introduced as example to make film at Silicon Wafer, but, the method that it will be understood by those skilled in the art that present embodiment is equally applicable to the semiconductor crystal wafer made such as other material such as germanium, GaAs, indium phosphide, indium antimonide, carborundum, cadmium sulfide, gallium arsenic silicon, sapphire glass.
As shown in Figure 2, described method comprises:
The size of measuring flume and position are set in the present embodiment so that the zone corresponding with semiconductor film, zone corresponding to measuring flume has a common boundary.In a preferred implementation, measuring flume forms in zone corresponding to the semiconductor film of a certain chip and it is big or small less than this zone.Like this, needn't make modification to other flow process in the manufacture process.
Fig. 3 a is the schematic cross-section of the rear Silicon Wafer of step 210.Be formed with measuring flume 32 on the first surface 31 of Silicon Wafer 30.Measuring flume 32 has the first degree of depth A.For example, when the semiconductor film thickness of expectation is 8 microns, the measuring flume of 15 micrometer depth of formation.
The effect of protective clear layer is to provide for the bottom of measuring flume the structure of the technique corrosion that is not corroded, so that the follow-up thickness that can calculate semiconductor film to the distance of crystal column surface to distance and the semiconductor film surface of crystal column surface by measuring the measuring flume surface.Secondly, after protective clear layer prevented that the material at the measuring flume structure back side is etched, etching liquid was penetrated into first surface from the second surface of wafer and causes wafer to damage.Simultaneously, protective layer is set to transparent, be in manufacture process can by check zone corresponding to measuring flume whether printing opacity observe this protective layer and whether corroded and expose, thereby convenient in etching process, the time of control corrosion.
Fig. 3 b is the schematic cross-section of the rear Silicon Wafer of step 220.Inside deposition at measuring flume 32 is formed with protective clear layer 33.
In a preferred implementation of present embodiment, protective clear layer is selected silicon nitride (SiN) or silica (SiO
2) form as material.Silicon nitride and silica can not be used to corrode the corrosive liquid corrosion of Silicon Wafer, therefore can provide the reference surface of measuring semiconductor film thickness in making the semiconductor film process.
In the present embodiment, carry out preliminary corrosion depth and carry out preliminary corrosion, after finishing, observe whether printing opacity of zone corresponding to test trough on the Silicon Wafer, if printing opacity then illustrates the thickness of semiconductor film near desired depth, further control again technical process after need to measuring.
Fig. 3 c is the schematic cross-section of the rear Silicon Wafer of step 230.Shown in Fig. 3 c, after the step 230, the second surface 34 of wafer 30 is corroded and forms the chamber, and the bottom in chamber is needed semiconductor film 35.The corrosion of step 230 is preliminary corrosion, and its silicon with test trough 32 bottoms erodes, thereby so that protective clear layer exposed.Because in the present embodiment, the zone of test trough 32 correspondences and semiconductor film 35 corresponding zones have a common boundary, therefore, and the protective clear layer 33 that exposes and the structure 36 of semiconductor film in intersection formation step.
The height of step 240, measurement terraced structure is as the difference in height between semiconductor film surface and the protective clear layer.
In the present embodiment, because the protective clear layer zone corresponding with semiconductor film has a common boundary, both form the structure 36 of step at juncture area, so can directly utilize step instrument to test the height B of this terraced structure 36.
The height B that deducts described terraced structure 36 to distance (also the being first degree of depth) A of Silicon Wafer first surface by test trough bottom namely can obtain the thickness of current semiconductor film.
After measuring and calculate the thickness that obtains the semiconductor film that preliminary corrosion obtains, reach expectation thickness thereby both can the thickness that technological parameter further corrodes the control semiconductor film be set according to current thickness and expectation thickness.The step of this measurement-calculating-corrosion can be as required repeatedly to obtain needed precision.
In a preferred implementation of present embodiment, after step 220, can also comprise a step 220a, namely on protective clear layer, form again the layer of metal layer.Whether described metal level is used for carrying out reflective, can observe more significantly like this protective clear layer and be exposed.
Fig. 4 is the schematic cross-section of the Silicon Wafer after the corrosion under this preferred implementation.Above protective clear layer 32, be formed with metal level 37.
Present embodiment is selected test trough is formed in the zone of semiconductor film boundary, so that corrode the transparency protected terraced structure that is shaped as of surface and the test trough bottom of rear semiconductor film, is convenient for measuring both differences in height, has improved measurement efficient.
Need to prove that what Fig. 3,4 only illustrated is cross section that chip area is interior on the Silicon Wafer.It will be understood by those skilled in the art that in manufacture process usually can make a plurality of chips with array format on the Silicon Wafer, each chip is corresponding to a chip area.Can select at least one chip area wherein to make measuring flume.Because after making measuring flume, corresponding chip structure changes, it is out of use making after finishing, and therefore, selects according to actual conditions on need to and distributing in the quantity of measuring flume.Select rational measuring flume quantity, and make its diverse location that is evenly distributed on whole Silicon Wafer, can prevent because error appears in the Silicon Wafer semiconductor film THICKNESS CONTROL that causes in uneven thickness itself.
Fig. 5 is the flow chart of the method for the semiconductor film thickness that forms of the control deep groove etching of third embodiment of the invention.Third embodiment of the invention is introduced as example to make film at Silicon Wafer, but, the method that it will be understood by those skilled in the art that present embodiment is equally applicable to the semiconductor crystal wafer made such as other material such as germanium, GaAs, indium phosphide, indium antimonide, carborundum, cadmium sulfide, gallium arsenic silicon, sapphire glass.
As shown in Figure 5, described method comprises:
Wherein, first degree of depth is greater than the expectation thickness of semiconductor film.And measuring flume is made separately so that it is corresponding to the zone zone mutually isolation corresponding with semiconductor film at Silicon Wafer.
In an optimal way of the present invention, measuring flume can be formed the whole semiconductor film zone that occupies a certain chip, like this, other semiconductor film is isolated mutually on measuring flume and the Silicon Wafer.
In the present embodiment, protective clear layer is selected silicon nitride (SiN) or silica (SiO
2) form as material.Therefore can the not be corroded corrosive liquid corrosion of Silicon Wafer of silicon nitride and silica can provide the reference surface of measuring semiconductor film thickness in making the semiconductor film process.
In the present embodiment, carry out preliminary corrosion depth and carry out preliminary corrosion, after finishing, observe whether printing opacity of zone corresponding to test trough on the Silicon Wafer, if printing opacity then illustrates the thickness of semiconductor film near desired depth, further control again technical process after need to measuring.
In the present embodiment, because the isolation of the surface of the bottom of measuring flume and semiconductor film so that there is not the structure that can directly carry out height difference measuring between the two, therefore need to be carried out the measurement that a plurality of steps are carried out difference in height.Specifically comprise:
The method of present embodiment also comprises after step 540:
After measuring and calculate the thickness that obtains the semiconductor film that preliminary corrosion obtains, reach expectation thickness thereby both can the thickness that technological parameter further corrodes the control semiconductor film be set according to current thickness and expectation thickness.The step of this measurement-calculating-corrosion can be as required repeatedly to obtain needed precision.
In a preferred implementation of present embodiment, after step 520, can also comprise a step 520a, namely on protective clear layer, form again the layer of metal layer.Whether described metal level is used for carrying out reflective, can observe more significantly like this protective clear layer and be exposed.
Fig. 6 is the schematic cross-section of the Silicon Wafer after corrosion under this preferred implementation.As shown in Figure 6, Silicon Wafer 60 comprises the first chip area 61 and the second chip area 62, measuring flume 63 is formed in the first chip area, occupies the entire area of semiconductor film in the first chip area, thereby so that the first chip area 61 forms an independently process control module structure.Be formed with protective clear layer 64 in measuring flume 63 bottoms.Further, above protective clear layer, be formed with metal level 65.The bottom that the first chamber 66 that corrosion forms and 67, the first chambeies 66, the second chamber are arranged below Silicon Wafer 60 is that the bottom in protective clear layer 64, the second chambeies 67 is semiconductive thin films 68 of the second chip area 62 correspondences.
Whether present embodiment, is convenient to observe protective clear layer and is exposed so that the area of test trough can form greatlyr by test trough being formed the zone that isolates with semiconductor film.Simultaneously since with the semiconductor film zone isolation, the protective clear layer in the test trough structure further strengthens for the ability that prevents the corrosive liquid seepage.
Need to prove that what Fig. 6 only illustrated is cross section that chip area is interior on the Silicon Wafer.It will be understood by those skilled in the art that in manufacture process, usually can make a plurality of chips with array format on the Silicon Wafer, the corresponding chip area of each chip.Can select at least one chip area wherein to make measuring flume.Because after making measuring flume, corresponding chip structure changes, it is out of use making after finishing, and therefore, selects according to actual conditions on need to and distributing in the quantity of measuring flume.Select rational measuring flume quantity, and make its diverse location that is evenly distributed on whole Silicon Wafer, can prevent from causing the semiconductor film thickness on the wafer error to occur because Silicon Wafer itself is in uneven thickness.
Fig. 7 is the structural representation of the semiconductor structure that is used for the semiconductor film thickness that the control deep groove etching forms of fourth embodiment of the invention.As shown in Figure 7, described structure comprises the measuring flume with first degree of depth 72 on the first surface 71 that is formed on semiconductor crystal wafer 70, wherein, described first degree of depth is greater than the expectation thickness of described semiconductor film, and described first surface is relative with the second surface that will carry out deep groove etching.The expectation thickness that the degree of depth of measuring flume is set to greater than semiconductor film is to form in the process of semiconductor film in corrosion for follow-up, when the degree of depth of corrosion approaches the semiconductor film that forms expectation thickness, the material at the measuring flume back side all is corroded, and whether has approached expectation thickness thereby be convenient to observe semiconductor film.And so that have difference in height between the semiconductor film that measuring flume and preliminary corrosion obtain, this difference in height can be used for calculating the thickness of the semiconductor film that preliminary corrosion obtains to the measuring flume degree of depth than conference.
Described structure also comprises the protective clear layer 73 that is formed in the measuring flume.The effect of protective clear layer 73 is to provide for the bottom of measuring flume the structure of the technique corrosion that is not corroded, so that the follow-up thickness that can calculate semiconductor film to the distance of crystal column surface to distance and the semiconductor film surface of crystal column surface by measuring the measuring flume surface.Secondly, after protective clear layer prevented that the material at the measuring flume structure back side is etched, etching liquid was penetrated into first surface from the second surface of wafer and causes wafer to damage.Simultaneously, protective layer is set to transparent, be in manufacture process can by check zone corresponding to measuring flume whether printing opacity observe this protective layer and whether corroded and expose, thereby convenient in etching process, the time of control corrosion.
In a preferred implementation of present embodiment, described structure can also comprise the metal level 74 that is formed on the protective clear layer 73.Whether described metal level is used for carrying out reflective, can observe more significantly like this protective clear layer 73 and be exposed.
In a preferred implementation of present embodiment, the zone corresponding with described measuring flume, the zone that described semiconductor film is corresponding has a common boundary.
Perhaps, in another preferred implementation of present embodiment, the zone isolation that the zone that described semiconductor film is corresponding is corresponding with described measuring flume.
Present embodiment is made for the measuring flume of measuring semiconductor film thickness in advance by the front at semiconductor crystal wafer, so that can be take measuring flume as reference monitoring corrosion progress in the technical process of corrosion formation semiconductor film, simultaneously, measure the thickness of the semiconductor film that corrosion forms according to the counter structure of measuring flume, overcome because the semiconductor film thickness that causes of semiconductor crystal wafer thickness error is difficult to the problem monitoring and measure.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and to those skilled in the art, the present invention can have various changes and variation.All any modifications of within spirit of the present invention and principle, doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. method of controlling the semiconductor film thickness that deep groove etching forms comprises:
Make the measuring flume that at least one has first degree of depth at the first surface of semiconductor crystal wafer; Wherein, described first degree of depth is greater than the expectation thickness of described semiconductor film;
In described measuring flume, form protective clear layer;
Carry out deep groove etching in zone and zone corresponding to described measuring flume that the above semiconductor film of second surface of semiconductor crystal wafer is corresponding, to form described semiconductor film; Wherein, described second surface is relative with described first surface, and described deep groove etching so that described protective clear layer expose;
Measure difference in height between the semiconductor film surface that described protective clear layer and corrosion form from the second surface of semiconductor crystal wafer;
Calculate the current thickness of described semiconductor film according to the difference of described first degree of depth and described difference in height;
Current thickness according to described semiconductor film further corrodes so that the thickness of semiconductor film reaches described expectation thickness zone corresponding to described semiconductor film.
2. method according to claim 1 is characterized in that, described method also comprises after forming protective clear layer, forms metal level at described protective clear layer.
3. method according to claim 1 is characterized in that, the zone corresponding with described measuring flume, the zone that described semiconductor film is corresponding has a common boundary;
The difference in height that described second surface from semiconductor crystal wafer is measured between the semiconductor film surface that described protective clear layer and corrosion form comprises:
Directly measure the height of described protective clear layer and semiconductor module intersection terraced structure.
4. method according to claim 1 is characterized in that, the zone isolation that the zone that described semiconductor film is corresponding is corresponding with described measuring flume;
The difference in height that described second surface from semiconductor crystal wafer is measured between the semiconductor film surface that described protective clear layer and corrosion form comprises:
Measure crystal column surface to second degree of depth of protective clear layer from the second surface of semiconductor crystal wafer;
Measure crystal column surface to the 3rd degree of depth on described semiconductor film surface from the second surface of semiconductor crystal wafer;
The described difference in height of poor acquisition according to the 3rd degree of depth and second degree of depth.
5. according to claim 3 or 4 described methods, it is characterized in that, measure and use step instrument to carry out.
6. method according to claim 1 is characterized in that, described first surface at semiconductor crystal wafer is made at least one measuring flume with first degree of depth and comprised:
Equally distributed diverse location is made a plurality of measuring flumes with first degree of depth on described semiconductor crystal wafer.
7. method according to claim 1 is characterized in that, described semiconductor crystal wafer is Silicon Wafer, and described protective clear layer is silicon nitride or silica.
8. semiconductor structure that is used for the semiconductor film thickness that the control deep groove etching forms comprises:
Be formed on the measuring flume with first degree of depth on the first surface of semiconductor crystal wafer, wherein, described first degree of depth is greater than the expectation thickness of described semiconductor film, and described first surface is relative with the second surface that will carry out deep groove etching;
Be formed on the protective clear layer in the measuring flume.
9. semiconductor structure according to claim 8 is characterized in that, also comprises the metal level that is formed on the protective clear layer.
10. semiconductor structure according to claim 8 is characterized in that, the zone corresponding with described measuring flume, the zone that described semiconductor film is corresponding has a common boundary; Perhaps
The zone isolation that the zone that described semiconductor film is corresponding is corresponding with described measuring flume.
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| CN112271143A (en) * | 2020-09-25 | 2021-01-26 | 华东光电集成器件研究所 | Monitoring method for residual thickness of silicon wafer film layer corrosion |
| CN113651291A (en) * | 2021-07-15 | 2021-11-16 | 复旦大学 | Preparation method of self-supporting micron-thickness silicon diaphragm |
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| CN103065942B (en) | 2016-10-19 |
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