CN103528567B - Tilt angle sensor based on pressure sensing - Google Patents
Tilt angle sensor based on pressure sensing Download PDFInfo
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- CN103528567B CN103528567B CN201310533252.6A CN201310533252A CN103528567B CN 103528567 B CN103528567 B CN 103528567B CN 201310533252 A CN201310533252 A CN 201310533252A CN 103528567 B CN103528567 B CN 103528567B
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- Prior art keywords
- deep trouth
- film
- pressure sensing
- substrate
- compressive resilience
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C9/00—Measuring inclination, e.g. by clinometers, by levels
- G01C9/18—Measuring inclination, e.g. by clinometers, by levels by using liquids
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a tilt angle sensor based on pressure sensing. The tilt angle sensor based on pressure sensing comprises a substrate, two micro pressure sensors and a cover plate, wherein a vertical deep groove is formed in the middle of the substrate, an elastic pressure film is arranged on the bottom of the substrate, and the micro pressure sensors are arranged on symmetrical positions on the bottom of the elastic pressure film; liquid is accommodated in the deep groove and is located above the elastic pressure film, and the cover plate is sealed above the deep groove; an insulating medium film is arranged on the bottom of the elastic pressure film and covers the elastic pressure film and the two micro pressure sensors. The tilt angle sensor based on pressure sensing has the advantages that the principle is clear, batch production can be achieved by adopting the mature silicon processing technique, cost is low, and the tilt angle sensor can be integrated with a circuit easily; piezoresistance stress sensors can serve as the micro pressure sensors to detect pressure change, and signal processing is simple; the micro pressure sensors are mainly used for detecting a stress difference value, and the temperature drift effect is avoided.
Description
Technical field
The present invention relates to a kind of based on pressure sensing obliquity sensor, particularly relate to a kind of obliquity sensor with two micropressure sensors that symmetric position is arranged based on micro-processing technology manufacture.
Background technology
Level meter is widely used in present many industries, is often applied to the fields such as machining, medical biochemical system, exact instrument installation, building, road engineering and military project boats and ships.Traditional is bubble inclination angle type air-bubble level, can measure the inclination conditions in the gentle two-dimensional level face of One-Dimensional Water, but data is read by naked eyes and can not realize automatic measurement, so have certain error when measuring, precision is lower.Modern electronic level meter or obliquity sensor main operational principle are electric capacity, inductance type, utilize solid to swing and realize induction, and realize automatically measuring, and can measure the balance of high-precision physical construction, as lathe, exact instrument etc.Along with the development of micro-processing technology, utilize the micro-manufacturing process of silicon, reduce device size, inclinator structure is more accurate, and can be integrated with circuit, and measurement can be made more accurate.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of based on pressure sensing obliquity sensor, the non-equilibrium state of two micropressure sensors to liquid arranged by symmetric position is detected, and definite principle, structure are simple.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A kind of based on pressure sensing obliquity sensor, comprise substrate, two micropressure sensors and cover plate, the middle part of described substrate is provided with the vertical bottomless deep trouth of a symmetrical cross-sectional shape, compressive resilience film (i.e. pressure sensitive film) is provided with in the bottom of substrate, described compressive resilience film seals up the bottom of deep trouth, and compressive resilience film is symmetrical relative to the cross section line of symmetry of deep trouth, described two micropressure sensors are separately positioned on bottom compressive resilience film, deep trouth lower position (is preferably disposed on the marginal position in deep trouth cross section, the stress reaction of this position is comparatively obvious), and two micropressure sensors are symmetrical relative to the cross section line of symmetry of deep trouth, described deep trouth is interior, the top of compressive resilience film is contained with liquid, and when compressive resilience film location level, the liquid level of liquid and the upper edge of deep trouth exist gap, and described cover plate for sealing is above deep trouth, the bottom of described compressive resilience film is provided with dielectric insulating film, and described dielectric insulating film cover except metal lead wire link position lives compressive resilience film and two micropressure sensors, carries out protection realize electric isolution by dielectric insulating film.
Preferably, described micropressure sensor is one-dimentional structure stress detecting sensor or two-dimensional structure stress detecting sensor.The stress detecting sensor that preferred employing semiconductor pressure resistance technique makes is as micropressure sensor, two micropressure sensors are arranged on the symmetric position of compressive resilience film edge: according to one-dimentional structure stress detecting sensor, generally be arranged on two long opposite side of compressive resilience film, and Central Symmetry; According to two-dimensional structure stress detecting sensor, be generally arranged on two opposite side of compressive resilience film, and Central Symmetry.
Preferably, the density of described liquid is more than or equal to the density of water, and increase the stressed size of compressive resilience film of bottom, micropressure sensor is more easily detected, and pressure changes, and improves the sensitivity detected.
Preferably, described substrate is silicon chip or other semiconductor materials.
Preferably, described cover plate is sealed in above deep trouth by fluid sealant or glass silicon anode linkage or glass silicon eutectic bonding mode.
Preferably, the material of described cover plate is silicon, glass, plastics or metal etc.
Preferably, described substrate is circular or square structure, can certainly be other shapes, such as regular polygon etc.
Preferably, the shape of cross section of described deep trouth is circular or regular polygon, and the limit number of described regular polygon is preferably even number.
Preferably, described substrate and compressive resilience film are structure as a whole, this integrative-structure arranges one and vertically has end groove, the region that the vertical side walls of described groove surrounds is as deep trouth, described groove floor xsect is using upper part as substrate, and groove floor xsect is using lower part as compressive resilience film.
When the sensor levels of this case is placed, liquid produces uniform pressure to the compressive resilience film of bottom, two micropressure sensor output signals are identical, when sensing station tilts, the pressure that liquid produces the compressive resilience film of bottom is just uneven, and two micropressure sensors can detect pressure differential, and this pressure difference value is directly proportional to angle of inclination, by certain demarcation, the inclination angle of sensor institute examining system just can be reflected.
Beneficial effect: provided by the invention based on pressure sensing obliquity sensor, definite principle, ripe silicon process technology can be adopted to carry out the manufacturing of batch, and cost is low, and easily and circuit carry out integrated; Micropressure sensor can adopt pressure drag strain gauge detected pressures to change, and signal transacting is simple; Micropressure sensor, mainly for detection of stress difference, floats effect without temperature.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Be illustrated in figure 1 a kind of based on pressure sensing obliquity sensor, it is characterized in that: comprise substrate 1, two micropressure sensors 2 and cover plate 6, the middle part of described substrate 1 is provided with the vertical bottomless deep trouth of a symmetrical cross-sectional shape, the bottom of substrate 1 is provided with compressive resilience film 7, described compressive resilience film 7 seals up the bottom of deep trouth, and compressive resilience film 7 is symmetrical relative to the cross section line of symmetry of deep trouth, described two micropressure sensors 2 are separately positioned on bottom compressive resilience film 7, deep trouth lower position, and two micropressure sensors 2 are symmetrical relative to the cross section line of symmetry of deep trouth, described deep trouth is interior, the top of compressive resilience film 7 is contained with liquid 5, and when compressive resilience film 7 position level, the liquid level of liquid 5 and the upper edge of deep trouth exist gap, and described cover plate 6 is sealed in above deep trouth, the bottom of compressive resilience film 7 is provided with dielectric insulating film 3, and described dielectric insulating film 3 cover except metal lead wire link position lives compressive resilience film 7 and two micropressure sensors 2, described micropressure sensor 2 is drawn by metal lead wire 4 and is used for driving and measuring.
Described micropressure sensor 2 is one-dimentional structure stress detecting sensor or two-dimensional structure stress detecting sensor; Described cover plate 6 is sealed in above deep trouth by fluid sealant or glass silicon anode linkage or glass silicon eutectic bonding mode.Described substrate 1 is circular or square structure; The shape of cross section of described deep trouth is circular or regular polygon.
Described substrate 1 and compressive resilience film 7 can be designed as integrative-structure, this integrative-structure arranges one and vertically has end groove, the region that the vertical side walls of described groove surrounds is as deep trouth, described groove floor xsect is using upper part as substrate 1, and groove floor xsect is using lower part as compressive resilience film 7.
When sensor levels is placed, now the pressure of liquid 5 pairs of compressive resilience films 7 is uniform, and the output of the micropressure sensor 2 that compressive resilience film 7 edge is placed is equal, and its pressure reduction is 0.When whole sensor run-off the straight, because liquid in deep trouth 5 still keeps level when stable state, so, the pressure of liquid 5 pairs of base pressure elastic membranes 7 is caused to produce difference due to the high difference of liquid, the output of the micropressure sensor 2 that compressive resilience film 7 edge is placed also produces difference, its output voltage is directly proportional to pressure reduction, by follow-up demarcation, just can reflect actual angle of inclination size.
The manufacturing process of the obliquity sensor based on pressure transducer of this case is: adopt silicon to do substrate, surface symmetric position makes highly sensitive strain pressure drag, deep trouth is made by bottom etching, produce pressure sensitive film at silicon chip surface, finally silicon chip is inverted and filling part liquid, surface-closed; Concrete manufacturing process is as follows:
1, select the silicon in N-type (100) crystal orientation as substrate 1, then adopt thermal oxidation technology in Surface Creation layer of silicon dioxide as insulating medium layer 3;
2, photoetching silicon oxide insulation dielectric layer 3, and adopt buffered hydrofluoric acid solution corrosion silicon oxide insulation dielectric layer 3 to expose two micropressure sensor 2 regions, adopt ion implantation boron impurity and form micropressure sensor 2 by annealing;
3, re-start photoetching, and adopt buffered hydrofluoric acid solution corrosion silicon oxide insulation dielectric layer 3 to expose fairlead, then adopt magnetron sputtering technique depositing metal aluminium, photoetching aluminium also uses hot phosphoric acid corrosion metallic aluminium to form metal lead wire 4;
4, carrying out photoetching to substrate 1 back side, there is silicon groove window in corrosion oxidation silicon, and then adopt dry method deep reaction ion etching or wet method tetramethyl hydrogen-oxygen amine corrosion silicon to form deep trouth, the non-corrosion part silicon now stayed bottom deep trouth is as pressure sensitive film 7;
5, the back side is placed upward, adopts accurate dropper in deep trouth, pour into liquid 5, liquid can be water or other heavy density fluid as salt solution or mercury etc., do not fill up;
6, surface cover plate 6 is sealed by fluid sealant.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (9)
1. one kind based on pressure sensing obliquity sensor, comprise substrate (1) and cover plate (6), the middle part of described substrate (1) is provided with the vertical bottomless deep trouth of a symmetrical cross-sectional shape, and described cover plate (6) is sealed in above deep trouth; It is characterized in that: also comprise two micropressure sensors (2), the bottom of substrate (1) is provided with compressive resilience film (7), described compressive resilience film (7) seals up the bottom of deep trouth, and compressive resilience film (7) is symmetrical relative to the cross section line of symmetry of deep trouth, described two micropressure sensors (2) are separately positioned on compressive resilience film (7) bottom, deep trouth lower position, and two micropressure sensors (2) are symmetrical relative to the cross section line of symmetry of deep trouth; Described deep trouth is interior, the top of compressive resilience film (7) is contained with liquid (5), and when compressive resilience film (7) position level, the liquid level of liquid (5) and the upper edge of deep trouth exist gap; The bottom of described compressive resilience film (7) is provided with dielectric insulating film (3), and described dielectric insulating film (3) cover except metal lead wire link position lives compressive resilience film (7) and two micropressure sensors (2).
2. according to claim 1 based on pressure sensing obliquity sensor, it is characterized in that: described micropressure sensor (2) is one-dimentional structure stress detecting sensor or two-dimensional structure stress detecting sensor.
3. according to claim 1 based on pressure sensing obliquity sensor, it is characterized in that: the density of described liquid (5) is more than or equal to the density of water.
4. according to claim 1 based on pressure sensing obliquity sensor, it is characterized in that: described substrate (1) is silicon substrate.
5. according to claim 1 based on pressure sensing obliquity sensor, it is characterized in that: described cover plate (6) is sealed in above deep trouth by fluid sealant or glass silicon anode linkage or glass silicon eutectic bonding mode.
6. according to claim 1 based on pressure sensing obliquity sensor, it is characterized in that: the material of described cover plate (6) is silicon, glass, plastics or metal.
7. according to claim 1 based on pressure sensing obliquity sensor, it is characterized in that: described substrate (1) is circular or square structure.
8. according to claim 1 based on pressure sensing obliquity sensor, it is characterized in that: the shape of cross section of described deep trouth is circular or regular polygon.
9. according to claim 1 based on pressure sensing obliquity sensor, it is characterized in that: described substrate (1) and compressive resilience film (7) are structure as a whole, this integrative-structure arranges one and vertically has end groove, the region that the vertical side walls of described groove surrounds is as deep trouth, described groove floor xsect is using upper part as substrate (1), and groove floor xsect is using lower part as compressive resilience film (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310533252.6A CN103528567B (en) | 2013-10-31 | 2013-10-31 | Tilt angle sensor based on pressure sensing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310533252.6A CN103528567B (en) | 2013-10-31 | 2013-10-31 | Tilt angle sensor based on pressure sensing |
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| CN103528567A CN103528567A (en) | 2014-01-22 |
| CN103528567B true CN103528567B (en) | 2015-06-03 |
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| CN112710282B (en) * | 2020-12-18 | 2023-02-28 | 合肥阿格德信息科技有限公司 | Horizontal measuring device based on machine vision |
| CN112902906B (en) * | 2021-03-31 | 2022-07-08 | 南昌大学第一附属医院 | Magnetic high-precision digital display instrument for measuring angle of operating table |
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| JP2004347529A (en) * | 2003-05-23 | 2004-12-09 | Alps Electric Co Ltd | Capacitance type sensor |
| CN2839963Y (en) * | 2005-09-19 | 2006-11-22 | 周常柱 | Resistance strain type pitch angle detection sensor |
| CN202814396U (en) * | 2012-09-19 | 2013-03-20 | 武汉天宇光电仪器有限公司 | Uniaxial tilt-angle electronic sensor |
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Granted publication date: 20150603 Termination date: 20171031 |