CN103060763A - Vacuum film forming method and vacuum film forming apparatus - Google Patents
Vacuum film forming method and vacuum film forming apparatus Download PDFInfo
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- CN103060763A CN103060763A CN2012104024735A CN201210402473A CN103060763A CN 103060763 A CN103060763 A CN 103060763A CN 2012104024735 A CN2012104024735 A CN 2012104024735A CN 201210402473 A CN201210402473 A CN 201210402473A CN 103060763 A CN103060763 A CN 103060763A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Abstract
The invention provides a vacuum film forming method and a vacuum film forming apparatus which is easy to use and is low in initial stage cost and operation cost. The inside of a film forming chamber (2) is provided with a workpiece support (10) and a magnetron electrode (15). The magnetron electrode (15) is provided with a first target material (16) and a second target material (17) which is overlapped the first target material. The second target material (17) can cover or cannot cover the first target material (16). The direct current voltage and high frequency voltage can be selectively applied between the workpiece support (10) and the first and second target materials (16, 17).
Description
Technical field
The present invention relates to the film forming behind the injection molded is moved into to filming chamber with workpiece and carry out vacuum film-forming method and the vacuum film formation apparatus of film forming, be not defined in this, can also continue to form vacuum film-forming method and the vacuum film formation apparatus that overlaps film but especially relate to.
Background technology
As having the product of the film of 0.01 ~ a few μ m levels in film forming with the part on the surface of workpiece, can enumerate the headlight that for example is equipped on automobile.This headlight is made by evaporation coating device, sputter equipment or CVD film deposition system, but this vacuum film formation apparatus also is applicable to the generation, the generation of photocatalyst film of transparency electrode of generation, liquid crystal indicator of metallic membrane of record surface of generation, the CD/DVD of disk.Product utilization injection molded with this film film forming workpiece that is shaped, and being arranged in the filming chamber of vacuum state then utilizes film forming key element described later and forms film.And the protective membrane that the organic luminous layer on the substrate is protected also utilizes same vacuum film formation apparatus to form.
In the past, in this film forming with the surperficial film forming evaporation coating method of workpiece or film as dry-coated method and widely known, known for example have: make film forming relative with target material with the surface of workpiece, in the ar gas environment about several Pa ~ tens Pa target material is applied the negative voltage of 300 ~ several kV, then discharge and film forming sputtering method; In vacuum chamber, will make its heating evaporation to the target material irradiation from the electron beam that electron beam gun produces, thereby carry out the electron beam evaporation method of film forming in film forming with the surface of workpiece; Substrate is applied the negative voltage of 300 ~ several kV, the ion electroplating method that under the pressure of the argon gas of several Pa, carries out vacuum evaporation; And method for plasma deposition etc., also known in addition have a chemical vapor deposition method.
Also known have form as described above film, the film that continues to form reduplicative forms at described film namely overlaps the film of film.This known film comprises: the film forming behind the injection molded is moved into the operation in the cup of low vacuum state with workpiece; Transfer and film forming goes out the operation of film to the sputtering chamber of high vacuum state; Then transfer to the coincidence chamber of middle vacuum state and form the operation that overlaps film in stacked mode; And the operation of taking out as product via the taking-up chamber of low vacuum state etc.The chamber of implementing so a plurality of operations comprises cup, sputtering chamber, coincidence chamber, takes out chamber etc., has whole maximization of device and the first high shortcoming of current cost.And, because the volume of monolithic chamber is large, therefore there is the also problem that raises of surging, running cost of vacuum attraction spended time, consumed energy.
In addition, when utilizing above-mentioned dry-coated method to come formed film, if having moisture in film forming with workpiece, filming chamber etc., then the generation of film, especially film are impaired with the adhesion on the surface of workpiece to film forming.Therefore, film forming is moved into and entered substantial film forming action to filming chamber with workpiece before, carry out and to form 1 * 10 in the filming chamber
-3High vacuum about Pa and dewatered pre-treatment.The consumed energy increase owing to this pre-treatment, the long-time and cost rising of film forming cost.
[formerly technical literature]
[patent documentation]
[patent documentation 1] TOHKEMY 2011-58048 communique
A kind of film deposition system that possesses the target that film forming uses and overlap these two targets of target that film uses in filming chamber is disclosed in patent documentation 1.Shutter is set respectively on described target, and is configured to horizontal row.The target of using with film forming and overlap support movement between described target of the film forming usefulness workpiece of corresponding settings of target that film uses.And, in above-mentioned patent documentation 1, disclose a kind of film forming that will take out from forming mill and then decompression after carried out the vacuum film-forming method of film forming by for example hot blast insulation to more than 40 ℃ and to vacuum film formation chamber transfer with workpiece.
Patent documentation 1 disclosed vacuum film-forming method or film deposition system in 1 filming chamber, arrange film forming with and overlap film with these two target electrodes, therefore compare with the known device that is consisted of by two filming chamber in the past, become compact and just current cost and running cost all minimizing to a certain degree.But, can recognize the leeway that also has improvement.For example, because two target electrodes are configured to horizontal row, the film deposition system main body of therefore growing in the horizontal might not be compact.And because film deposition system is large, in other words the volume of filming chamber is large, so the capacity of the vacuum pump used of exhaust etc. is large, and evacuation time is also long, and first current cost and running cost all raise.
In addition, the film forming of patent documentation 1 record because insulation, can expect therefore that moisture to a certain degree removes with workpiece, keeps may be described as the useless processing that does not have Special Significance based on following reason but heat.Usually, the molding behind the injection molded is that film forming recruitment part takes out from mould with the state higher than room temperature, but so talks about, and is subject under the state higher than room temperature from the domination of film forming with the workpiece expellant gas, and attracting deposits of moisture can not occur.Further specify, usually known situation is, resin forming product reaches and keeps equilibrium state that Exhaust Gas and moisture attracts deposits behind the normal temperature and stablized at about 4 hours after shaping.As moving in the film deposition system main body at the appointed time, then drop in temperature is little, even if there is not the problem of moisture, also blows out hot blast and remains more than 40 ℃, therefore consumed energy invalidly.
In addition, chamber is had to go to the toilet reduce sharply when pressing, because heat insulation decompression and temperature in the chamber sharply descends.Consequently, the inwall of chamber can dewfall.Owing to do not take especially the countermeasure for this phenomenon, therefore must after being got rid of, dew enter the film forming action, thus the film forming spended time.When reducing pressure gradually, namely allow to avoid dewfall, because the exhaust spended time, the result is that film formation time is elongated.
Summary of the invention
Therefore, no matter the object of the invention is the film that is made of individual layer if being to provide a kind of, still be laminated in the coincidence film of the mode of this film, can both reach the vacuum film formation apparatus that in the enforcement of the method, uses with the installation cost of cheapness and with the vacuum film-forming method that low running cost forms.
The present invention to achieve these goals, film forming is shaped by injection molded with workpiece.In this injection molded, as in the past known, applicable fixed side mold and drawer at movable side mould.Move into to filming chamber with workpiece from the film forming that mould takes out, then film forming.At this moment, though take out film forming when moving into to filming chamber with workpiece the extraneous gas temperature or the room temperature in the factory when the high temperature in summer also for roughly below 30 ~ 35 ℃.On the other hand, the film forming of taking out from mould far above room temperature, for example is about 80 ℃ with the temperature of workpiece.Therefore, by from its surperficial expellant gas domination, film forming is with the workpiece moisture of can not attracting deposits with workpiece for film forming.And resinous film forming workpiece is the poor conductor of heat, therefore rapid drop in temperature can not occur.Therefore, the film forming of taking out from mould is in the present invention moved into to filming chamber with the Temperature Treatment that workpiece need not especially heat etc.At this moment, when become being taken out film forming with workpiece by temperature adjustment in the filming chamber, not more about 80 ℃ of the degree of melting of die temperature film forming recruitment parts roughly, the moisture in the filming chamber is removed.Because moisture is removed, therefore can rapid decompression and shorten film formation time.
In the filming chamber that also can import rare gas element or monomer of can reducing pressure, be provided with: the mounting film forming work support of workpiece; And relative with this work support, the magnetron electrode of overlapping installation target material as required.That is, at magnetron electrode the first target material is set, overlapping and the second target material is set with this first target material.This second target material adopts the covering position that covers the first target material and the position of dodging of opening wide.
In this filming chamber, move into the film forming workpiece, and to work support and be arranged between first and second target material of magnetron electrode and optionally apply volts DS (DC) and high-frequency voltage (RF), thereby form film at the film forming workpiece, and overlap film in the film shaping.
Namely, first aspect present invention constitutes a kind of vacuum film-forming method to achieve these goals, it is characterized in that, be installed in the film forming of injection molded on the work support of filming chamber with workpiece, wherein, described filming chamber is configured to make and is arranged at first of magnetron electrode, two target materials overlap in the direction relative with described work support, to reducing pressure in the described filming chamber, described the second target material is kept out of the way, between described the first target material and described work support, apply voltage, utilize described the first target material to form film in described film forming with the surface of workpiece.
Second aspect present invention constitutes a kind of vacuum film-forming method, it is characterized in that, be installed in the film forming of injection molded on the work support of filming chamber with workpiece, wherein, described filming chamber is configured to make first and second target material that is arranged at magnetron electrode to overlap in the direction relative with described work support, to reducing pressure in the described filming chamber, cover described the first target material by described the second target material, between described the second target material and described work support, apply voltage, utilize described the second target material to form film in described film forming with the surface of workpiece.。
Third aspect present invention constitutes a kind of vacuum film-forming method, it is characterized in that, form film by the described method of first aspect, then in described filming chamber, import the coincidence monomer, cover described the first target material by described the second target material, between described the second target material and described work support, apply voltage, and form the coincidence film in the mode that is layered on the described film.
Fourth aspect present invention constitutes a kind of vacuum film-forming method, it is characterized in that, by first or the described method of second aspect form film, then in described filming chamber, import the coincidence monomer, to applying voltage between described the first target material and the described work support or between described the second target material and the described work support, and form the coincidence film in the mode that is layered on the described film.
Fifth aspect present invention constitutes a kind of vacuum film-forming method, and either side is characterized in that as the basis in first to fourth aspect, applies high frequency to described target material, and the lip-deep insulant that is attached to this target material is removed to form film or overlapped film.
Sixth aspect present invention constitutes a kind of vacuum film-forming method, either side is the basis in the take first to the 5th aspect, it is characterized in that, the film forming that the mould used from injection molded takes out be cooled to workpiece be lower than room temperature before, this film forming moved into to become being approached by temperature adjustment with workpiece taken out in the filming chamber of this film forming with the temperature of the described mould of workpiece, form film or overlap film.
Seventh aspect present invention constitutes a kind of vacuum film formation apparatus, is provided with in being controlled so as to the filming chamber of desirable environment: the mounting film forming work support of workpiece; And the magnetron electrode of target material can be installed, described vacuum film formation apparatus is characterised in that, at described magnetron electrode the first target material is set, and in the mode that is overlapped in described the first target material the second target material being set, described the second target material can take to cover the position of described the first target material and these two positions, position of opening wide.
Eighth aspect present invention constitutes a kind of vacuum film formation apparatus,, it is characterized in that as the basis take the 7th aspect, optionally applies volts DS and high-frequency voltage between described work support and first and second target material.
Ninth aspect present invention constitutes a kind of vacuum film formation apparatus, take the 7th or eight aspect as the basis, it is characterized in that described the second target material is made of two tabular electrodes, these two tabular electrodes are driven with splitting around, thereby cover described the first target material or unlimited.
Tenth aspect present invention constitutes a kind of vacuum film formation apparatus, either side is the basis in the take the 7th to the 9th aspect, it is characterized in that, be provided with two rare gas element introducing ports and two venting ports in described filming chamber, a described rare gas element introducing port and venting port are arranged on the rear side of described target electrode.
[invention effect]
As described above, according to the present invention, in being controlled so as to the filming chamber of desirable environment, be provided with the mounting film forming with the work support of workpiece and the magnetron electrode of target material can be installed, at magnetron electrode the first target material is set, on described the first target material, the second target material is set overlappingly, the second target material can take to cover the position of the first target material and these two positions, position of opening wide, therefore namely possess first, 2 two target materials, but because described target material overlaps in the mode relative with work support, therefore with respect to work support transversely the device in the past of spread configuration compare, become compact.Thus, the volume of filming chamber reduces, and can be suitable for the little off-gas pump of capacity.Therefore, can obtain providing a kind of effect of vacuum film formation apparatus of cheapness.And, because the volume of filming chamber is little, therefore can energy-conservation ground reduce pressure at short notice the pressure of regulation.Therefore, also can obtain can be with low operating cost by the film forming effect of the described method in first and second aspect of the present invention.
In addition, according to the present invention, the second target material is arranged to and can be driven in the mode of the position that can take to cover the first target material and these two positions, position of opening wide, therefore first and second target material suitably separately can be used and uses in film forming the surface formation film of workpiece, also can be layered in the mode on this film, form the coincidence film by the described method of the third aspect.At this moment, target material and work support are moved and can form the coincidence film.
According to another invention, owing to become the approaching temperature of film forming with the mould of workpiece of having taken out by temperature adjustment in the filming chamber, therefore the moisture in the filming chamber can be removed.Therefore, can obtain and the film forming workpiece can be moved into and the next film forming effect of rapid decompression to filming chamber.
In addition, according to another invention, 1 rare gas element introducing port in two and 1 venting port are arranged on the rear side of target electrode, therefore also can be easily in the narrow like this space of the rear side of target electrode and import in short time rare gas element, and can discharge fully, therefore can form high-quality film with short formation circulation.
Description of drawings
Fig. 1 is the schematic sectional view of the vacuum film formation apparatus of embodiments of the present invention.
[label declaration]
W film forming workpiece 2 filming chamber
10 work supports, 15 magnetron electrodes
16 first target materials, 17 second target materials
25 direct supplys, 27 high frequency electric sources
31 first rare gas element ingress pipes, 31 second rare gas element ingress pipes
43 monomer ingress pipes, 47 dry gas ingress pipes
50 thick suction pipes (suction tube)
Embodiment
Below, by Fig. 1, the embodiment of vacuum film formation apparatus of the present invention is described.The summary situation of the vacuum film formation apparatus of present embodiment comprises as shown in Figure 1: the film deposition system main body 1 that is made of filming chamber 2; Injection molded goes out the forming mill that film forming is used workpiece; And will be shaped the film forming that with the transfer device of workpiece to filming chamber's 2 carryings by forming mill.Yet, no matter be that forming mill or transfer device all can be implemented in known manner, therefore not expression in Fig. 1.
The mode of rectangular parallelepiped is made of framework to be roughly in filming chamber 2.In Fig. 1, be provided with at the peristome of the sidepiece of left and be driven into the shutter door of sliding along the vertical direction vertical with paper.Open this shutter door and film forming is moved into or taken out of in filming chamber 2 in filming chamber 2 with workpiece, inside can be remained airtight by closing.Inner peripheral surface filming chamber 2, that comprise shutter door that so consists of is covered by the sheet material of aluminum, and its surface is coated with silicon, pastes the rubber-heating sheet at periphery.By this rubber-heating sheet, inner temperature is retained as the die temperature near forming mill, clearlyer is retained as the temperature that approaches the die temperature when taking out film forming with workpiece, although for example because of different being retained as about 80 ℃ of kind of resin.When becoming more than 80 ℃, thermal distortion occurs with workpiece in film forming sometimes, therefore also possesses refrigerating unit.That is, become about 80 ℃ by temperature adjustment.
Though clearly expression among Fig. 1 makes come in and go out with the workpiece leading section of the chassis 6 in the filming chamber of film forming be provided with the cowling panel 7 of the specified altitude of having offered a plurality of pores.Via this cowling panel 7, when opening shutter door, can will press a little from dry gas tank described later and the dry gas that is blown into to filming chamber 2 is discharged.Thus, the situation that moisture is at random invaded filming chamber 2 when high temperature wets can be prevented more, thereby the working hour of vacuum pump can be shortened.
Vacuum film formation apparatus as described above, as spattering filming device, apparatus for electron beam evaporation, ion plating film deposition system etc. and known, therefore the film deposition system of sputter mode is not elaborated as single flow, high frequency type, magnetic control tubular type etc. and known yet.And when importing organic gas to the low-temperature plasma that is mainly obtained by glow discharge, molecular weight increases gradually, be deposited on the film forming workpiece surface and form the coincidence film from plasma space, but this film deposition system is also known, therefore is not elaborated.
Below, the film forming key element that schematically shows for Fig. 1 describes.Prescribed position at the base plate 4 of filming chamber 2 is provided with work support 10.This work support 10 is being driven more than the rotating 360 degrees along sense of rotation on the above-below direction from base plate 4 to specified altitude.The wall conducting of work support 10 and filming chamber 2, therefore when applying for example positive voltage to wall, work support 10 also is applied in voltage.
With work support 10 relatively above it spatial placement i.e. (reaching) backboard of magnetron electrode 15 is arranged.Be provided with the first target material 16 at this magnetron electrode 15, and be provided with overlappingly the second target material 17 with this first target material 16.The second target material 17,17 STA representation to open in Fig. 1 with splitting around, but can be overlapped in the first target material 16 and cover the first target material 16 when closing.So, therefore first and second target material 16,17 overlapping can film forming go out two kinds of different films.And although be the device that can film forming goes out two kinds of different films, filming chamber 2 is compact in the horizontal as much as possible.And, need not make film forming just can form the coincidence film with workpiece is transversely mobile.The second target material 17,17 consists of by covering as required a pair of plate that then the first target material 16 discharge.The second target material 17 of pair of plate-shaped, 17 end are installed in each actuating arm 18,18 leading section.Actuating arm 18, the other end of 18 by insulating bushing 19, the supporting of 19 axles be rotation freely.Therefore, when by not shown piston cylinder unit etc. actuating arm 18,18 being driven, the second target material 17,17 opens and closes with splitting around.Because be to open and close, although therefore be provided with the second target material 17,17 that is made of two plates, filming chamber 2 does not widen into more than necessity with splitting around.
Outside in filming chamber 2, direct supply (DC), high frequency electric source (RF), monomer tank arrange like that like following explanation.That is, power supply terminal 20 is via not shown insulation lid 21, and is installed on the lid on the top of filming chamber 2 by same not shown resin bolt.This power supply terminal 20 is crossed the magnet case and is arrived magnetron electrode 15.And this feed cable 22 is connected with magnetron electrode 15.At i.e. (reach) backboard of magnetron electrode 15, as required from outside supply water coolant and make it at the backboard internal recycle, thereby can cool off magnetron electrode 15 or first and second target material 16,17.Need to prove that the water coolant that toward back plate is supplied with imports from 1 position in the present embodiment, flows out near the introducing port in internal recycling.Thus, the part that water coolant is sealed shortens.
According to present embodiment, possess direct supply (DC) and high frequency electric source (RF).Direct supply 25 is connected with switching arrangement 29 via wave filter 26, and high frequency electric source 27 is connected with switching arrangement 29 via match box 28.Negative voltage utilizes cable 22 to apply to magnetron electrode 15 from switching arrangement 29, and positive voltage applies via the wall of cable 23 grades to filming chamber 2, therefore applies to work support 10.The voltage that applies to magnetron electrode 15 is applied to the first target material 16, but the second target material 17,17 also applies voltage to the second target material 17,17 when becoming with the overlapping state of the first target material 16.When converting switch device 29, can replace volts DS and apply high-frequency voltage.
Rare gas element tank connected first and second rare gas element ingress pipe 31,32 the upper wall openings in filming chamber 2 such with argon gas, with oxygen or the tank connected gas introduction tube 40 of nitrogen, monomer ingress pipe 43 and dry gas ingress pipe 47 at sidewall opening, vaccum suction pipe namely attracts into the thick suction pipe 50 of low vacuum at the diapire opening.
At the first rare gas element ingress pipe 31 flowrate control valve 33 and electromagnetic opening and closing valve 34 are installed.This pipe 31 is at the wide part opening of filming chamber 2 and consist of main ingress pipe.At the second rare gas element ingress pipe 32 needle-valve 35 and electromagnetic opening and closing valve 36 are installed.This second rare gas element ingress pipe 32 is complementary ingress pipes, utilizes the narrow like this space of rear side of this Guan Erxiang target electrode 15 to supply with rare gas element.Branch out the suction tube 38 that exhaust usefulness valve 37 is installed from the second rare gas element ingress pipe 32.The terminal of this suction tube 38 is connected with thick suction pipe 50.Utilize this suction tube 38, the undesirable gas of rare gas element etc. at narrow positions place that tends to accumulate in the rear side of target electrode 15 is roughly discharged fully.
At monomer ingress pipe 43 monomer is installed and imports valve 44 and monomer flowrate control valve 45, and be connected with monomer tank 46.Dry gas ingress pipe 47 is connected with dry gas tank 49 via breather valve 48.At thick suction pipe 50 servo butterfly valve 51, dried pump 52, rotor pump 53 are installed, and to the atmosphere split shed.
The vacuum film formation apparatus of present embodiment as described above, possess work support 10, magnetron electrode 15, direct supply 25, high frequency electric source 27, switching arrangement 29 etc., and be provided with the first target material 16 at magnetron electrode 15, can be arranged to the first target material 16 the second target material 17 overlapping, therefore by their appropriate combination can be formed various films, but the film forming of following its representative of explanation is routine.
Such as everyone knows, to the die cavity injecting molten resin that is consisted of by fixed side mold and drawer at movable side mould and the film forming that is shaped workpiece W.Cooling curing to a certain degree after, for example make after die temperature drops to about 80 ℃, open the drawer at movable side mould and film forming taken out with workpiece W.Although it is different but be roughly 80 ℃ because of the kind of resin that the die temperature of this moment also is the temperature of film forming recruitment part.Move into and be installed on the work support 10 to 80 ℃ filming chamber 2 of temperature adjustment one-tenth and die temperature same degree in advance.Make rotor pump 53 startings and make filming chamber's 2 interior rapid decompressions, thereby become the force value of regulation.Even rapid decompression also is heated to form about 80 ℃, and moisture is removed, therefore can dewfall.Import rare gas element, for example argon gas from the first rare gas element ingress pipe 31.And, also import argon gas to the rear side of magnetron electrode 15 from the second rare gas element ingress pipe 31.Thus, become desirable environment in the filming chamber 2.Next, work support 10 is urged to specified altitude, and is rotated driving following such film forming on one side with the speed of stipulating on one side.
(1) utilizes the first target material 16 film forming films.
As the first target material 16 for example aluminium is arranged at magnetron electrode 15.The second target material 17,17 that also plays the effect of cover is opened.So, the first target material 16 opens wide as shown in Figure 1 and exposes, thereby relative with workpiece W with film forming.
(a) when when applying dc voltage between magnetron electrode 15 and the work support 10, can form film in film forming with the surface of workpiece W by the first target material 16.
(b) or to switching arrangement 29 switch and apply RF voltage and form film.
(2) utilize the second target material 17,17 film forming films.
The material of the second target material 17,17 other kinds of employing is stainless steel for example.The second target material 17,17 is driven and covers the first target material 16 and protect the first target material 16 to closing direction.The second target material 17 is relative with workpiece W with film forming.
(a) when when applying dc voltage between magnetron electrode 15 and the work support 10, can utilize the second target material 17 to form film in film forming with the surface of workpiece.
(b) or utilize switching arrangement 29 to switch to RF voltage and form film.
(3) form the film of the first layer, and continue to form the film that overlaps film thereon.
Utilize as described above the first target material 16 or the second target material 17 to form film.Then, from monomer ingress pipe 43 with monomer to filming chamber's 2 interior importings, and form the environment of regulation.And,
(a) form at film to applying dc voltage between the first target material 16 and the work support 10 and overlap film.
(b) or by the second target material 17,17 covering protections the first target material 16.And, to the second target material 17,17 with piece pole 10 between apply dc voltage and form at film and to overlap film.
(c) or utilize switching arrangement 29 to switch to RF voltage and form film.
As described above during film forming, to the first target material 16 or the second target material 17 adheres to insulant and direct-current discharge may become unstable.In this case, in advance sputter is namely carried out on the surface that perhaps utilizes RF to knock target material when the running of specified time, is that insulant is removed with the oxide compound on surface.Below similarly form film or overlap film with aforesaid method.
Claims (16)
1. a vacuum film-forming method is characterized in that,
Be installed in the film forming of injection molded on the work support (10) of filming chamber (2) with workpiece, wherein, described filming chamber (2) is configured to make first and second target material (16,17) that is arranged at magnetron electrode (15) to overlap in the direction relative with described work support (10)
To reducing pressure in the described filming chamber (2), described the second target material (17,17) is kept out of the way, between described the first target material (16) and described work support (10), apply voltage, utilize described the first target material (16) to form film in described film forming with the surface of workpiece (W).
2. vacuum film-forming method according to claim 1 is characterized in that,
Then in described filming chamber (2), import the coincidence monomer, cover described the first target material (16) by described the second target material (17), between described the second target material (17) and described work support (10), apply voltage, and form the coincidence film in the mode that is layered on the described film.
3. vacuum film-forming method according to claim 1 is characterized in that,
Then in described filming chamber (2), import the coincidence monomer, to applying voltage between described the first target material (16) and the described work support (10) or between described the second target material (17) and the described work support (10), and form the coincidence film in the mode that is layered on the described film.
4. each described vacuum film-forming method is characterized in that according to claim 1 ~ 3,
Apply high frequency to described target material (16,17), the lip-deep insulant that will be attached to this target material (16,17) is removed to form film or is overlapped film.
5. each described vacuum film-forming method is characterized in that according to claim 1 ~ 3,
The film forming that the mould used from injection molded takes out be cooled to workpiece (W) be lower than room temperature before, this film forming moved into to become being approached by temperature adjustment with workpiece (W) taken out in the filming chamber (2) of this film forming with the temperature of the described mould of workpiece (W), form film or overlap film.
6. vacuum film-forming method according to claim 4 is characterized in that,
The film forming that the mould used from injection molded takes out be cooled to workpiece (W) be lower than room temperature before, this film forming moved into to become being approached by temperature adjustment with workpiece (W) taken out in the filming chamber (2) of this film forming with the temperature of the described mould of workpiece (W), form film or overlap film.
7. a vacuum film-forming method is characterized in that,
Be installed in the film forming of injection molded on the work support (10) of filming chamber (2) with workpiece, wherein, described filming chamber (2) is configured to make first and second target material (16,17) that is arranged at magnetron electrode (15) to overlap in the direction relative with described work support (10)
To reducing pressure in the described filming chamber (2), cover described the first target material (16) by described the second target material (17,17), between described the second target material (17) and described work support (10), apply voltage, utilize described the second target material (17) to form film in described film forming with the surface of workpiece (W).
8. vacuum film-forming method according to claim 7 is characterized in that,
Then in described filming chamber (2), import the coincidence monomer, to applying voltage between described the first target material (16) and the described work support (10) or between described the second target material (17) and the described work support (10), and form the coincidence film in the mode that is layered on the described film.
9. according to claim 7 or 8 described vacuum film-forming methods, it is characterized in that,
Apply high frequency to described target material (16,17), the lip-deep insulant that will be attached to this target material (16,17) is removed to form film or is overlapped film.
10. according to claim 7 or 8 described vacuum film-forming methods, it is characterized in that,
The film forming that the mould used from injection molded takes out be cooled to workpiece (W) be lower than room temperature before, this film forming moved into to become being approached by temperature adjustment with workpiece (W) taken out in the filming chamber (2) of this film forming with the temperature of the described mould of workpiece (W), form film or overlap film.
11. vacuum film-forming method according to claim 9 is characterized in that,
The film forming that the mould used from injection molded takes out be cooled to workpiece (W) be lower than room temperature before, this film forming moved into to become being approached by temperature adjustment with workpiece (W) taken out in the filming chamber (2) of this film forming with the temperature of the described mould of workpiece (W), form film or overlap film.
12. a vacuum film formation apparatus is provided with in being controlled so as to the filming chamber of desirable environment (2): the mounting film forming work support (10) of workpiece (W); And the magnetron electrode (15) of target material can be installed, described vacuum film formation apparatus is characterised in that,
At described magnetron electrode (15) the first target material (16) is set, and in the mode that is overlapped in described the first target material (16) the second target material (17) being set, described the second target material (17) can adopt the position that covers described the first target material (16) and these two positions, position of opening wide.
13. vacuum film formation apparatus according to claim 12 is characterized in that,
Between described work support (10) and first and second target material (16,17), optionally apply volts DS and high-frequency voltage.
14. according to claim 12 or 13 described vacuum film formation apparatus, it is characterized in that,
Described the second target material (17,17) is made of two tabular electrodes, and these two tabular electrodes are driven with splitting around, thereby covers described the first target material (16) or unlimited.
15. according to claim 12 or 13 described vacuum film formation apparatus, it is characterized in that,
Be provided with two rare gas element introducing ports (31,32) and two venting ports (38,50) in described filming chamber (2), a described rare gas element introducing port (32) and a venting port (38) are arranged on the rear side of described target electrode (15).
16. vacuum film formation apparatus according to claim 14 is characterized in that,
Be provided with two rare gas element introducing ports (31,32) and two venting ports (38,50) in described filming chamber (2), a described rare gas element introducing port (32) and a venting port (38) are arranged on the rear side of described target electrode (15).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011230892A JP5405549B2 (en) | 2011-10-20 | 2011-10-20 | Vacuum film forming method and vacuum film forming apparatus |
| JP2011-230892 | 2011-10-20 |
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| CN103060763A true CN103060763A (en) | 2013-04-24 |
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| CN201210402473.5A Expired - Fee Related CN103060763B (en) | 2011-10-20 | 2012-10-19 | Vacuum film forming method and vacuum film forming apparatus |
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| Country | Link |
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| JP (1) | JP5405549B2 (en) |
| KR (1) | KR101442912B1 (en) |
| CN (1) | CN103060763B (en) |
| TW (1) | TWI452162B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105555995A (en) * | 2013-09-10 | 2016-05-04 | 株式会社岛津制作所 | Film formation device and film formation method |
| CN114855139A (en) * | 2021-02-04 | 2022-08-05 | 住友重机械工业株式会社 | Processing apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9934950B2 (en) | 2015-10-16 | 2018-04-03 | Samsung Electronics Co., Ltd. | Sputtering apparatuses and methods of manufacturing a magnetic memory device using the same |
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| CN101575698A (en) * | 2008-05-08 | 2009-11-11 | 佳能安内华股份有限公司 | Magnetron sputtering apparatus and method for manufacturing thin film |
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| JP3773320B2 (en) * | 1997-01-09 | 2006-05-10 | 新明和工業株式会社 | Film forming apparatus and film forming method |
| JP2000038668A (en) * | 1998-07-22 | 2000-02-08 | Toyobo Co Ltd | Vacuum thin film forming device and its production |
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- 2011-10-20 JP JP2011230892A patent/JP5405549B2/en not_active Expired - Fee Related
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- 2012-10-19 CN CN201210402473.5A patent/CN103060763B/en not_active Expired - Fee Related
- 2012-10-19 TW TW101138608A patent/TWI452162B/en not_active IP Right Cessation
- 2012-10-19 KR KR1020120116770A patent/KR101442912B1/en not_active IP Right Cessation
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| CN1950537A (en) * | 2004-06-28 | 2007-04-18 | 日立造船株式会社 | Evaporator, vapor deposition apparatus, and method of switching evaporator in vapor deposition apparatus |
| JP2006144053A (en) * | 2004-11-17 | 2006-06-08 | Bridgestone Corp | METHOD FOR FORMING N-DOPED ZnO FILM |
| CN101575698A (en) * | 2008-05-08 | 2009-11-11 | 佳能安内华股份有限公司 | Magnetron sputtering apparatus and method for manufacturing thin film |
| JP2011058048A (en) * | 2009-09-10 | 2011-03-24 | Nikuni:Kk | Vacuum film deposition method and device therefor |
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| CN105555995A (en) * | 2013-09-10 | 2016-05-04 | 株式会社岛津制作所 | Film formation device and film formation method |
| CN105555995B (en) * | 2013-09-10 | 2017-11-07 | 株式会社岛津制作所 | Film formation device and film build method |
| CN114855139A (en) * | 2021-02-04 | 2022-08-05 | 住友重机械工业株式会社 | Processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5405549B2 (en) | 2014-02-05 |
| JP2013087349A (en) | 2013-05-13 |
| KR20130043595A (en) | 2013-04-30 |
| TW201321540A (en) | 2013-06-01 |
| TWI452162B (en) | 2014-09-11 |
| KR101442912B1 (en) | 2014-09-22 |
| CN103060763B (en) | 2015-01-07 |
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