CN103035802A - Patterned substrate and light emitting diode (LED) chip used for LED inverted-assembly structure - Google Patents
Patterned substrate and light emitting diode (LED) chip used for LED inverted-assembly structure Download PDFInfo
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- CN103035802A CN103035802A CN2012105460587A CN201210546058A CN103035802A CN 103035802 A CN103035802 A CN 103035802A CN 2012105460587 A CN2012105460587 A CN 2012105460587A CN 201210546058 A CN201210546058 A CN 201210546058A CN 103035802 A CN103035802 A CN 103035802A
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Abstract
The invention discloses a patterned substrate and a light emitting diode (LED) chip used for an LED inverted-assembly structure. Patterns of the substrate are formed by a plurality of semispheres in the same shape and arranged on the surface of the substrate, the height of each semisphere is the same as a bottom surface radius r of a corresponding semisphere, and the distance d between adjacent semispheres is 0.7-1.0 times of the bottom surface radius r of each semisphere. Compared with the prior art, light emission advantages of the semispheric patterns are fully taken, the luminous flux of the patterned substrate and the LED chip used for the LED inverted-assembly structure is improved for 6-11% compared with the patterned substrate and the LED chip used for an LED forward-assembly structure, and processing and popularization are convenient.
Description
Technical field
The present invention relates to led chip, particularly a kind of patterned substrate and led chip for the LED inverted structure.
Background technology
The patterned substrate technology is the focus of recent Sapphire Substrate GaN base LED area research.Its pattern develops so far, and LED light extraction effect and epitaxial quality are improved significantly, has become the important channel of improving the LED performance.
Underlay pattern is presented as two aspects to the raising of LED optical property: on the one hand, pattern changes the track of light by scattering/reflection, and light is diminished (less than the cirtical angle of total reflection) in the incidence angle of interface outgoing, thereby transmission and going out improves the recovery rate of light; On the other hand, pattern can also reduce crystal defect so that side direction brilliant effect of heap of stone appears in follow-up GaN growth, improves internal quantum efficiency.For satisfying the requirement of device performance, the design of pattern is several kinds of renewals, use up till now more hemisphere from grooved, taper, prismoid shaped, and the effect of graph substrate technology is approved.Studies show that: do not have angular hemispherical pattern, can reduce to large extent stress, reduce defective; In addition, hemispheroidal solid matter cloth is more obvious to side direction crystalline substance of heap of stone, and crystalloid amount of heap of stone can significantly improve; Aspect the raising light extraction efficiency, hemisphere face is with respect to many plane bodies structure of other several patterns, and is stronger to the ability of dispersing of light.
As the direct factor that affects light path, the parameter of pattern will certainly affect (comprising radius, height and spacing etc.) performance of LED in the choice.(basic pattern is the circular hole of diameter 3 μ m to the people such as D.S.Wuu in the different Sapphire Substrate of depth of pattern, the degree of depth is equidistantly increased by 0.5 μ m to 1.5 μ m) upward adopt the mocvd method growing GaN and make chip, it is carried out optic test, discovery is ideal with the GaN base LED that the graphical sapphire substrate of depth capacity makes, its external quantum efficiency reaches 14.1%, and the beam intensity ratio common LED improves about 63%.The human nanometer embossings such as R.Hsueh are prepared diameter 240nm, interval 450nm, the circular hole pattern of dark 165nm, the light intensity of the led chip that this substrate produces and light emission rate all are higher than common Sapphire Substrate LED, improved respectively 67% and 38%, also be better than micron order graph substrate LED.But be not that dimension of picture is less, the performance of LED is just better, and the relation between dimension of picture and LED performance still needs balance.Studies show that: along with reducing of pattern-pitch, be prone to the cavity that has little time to heal and produce owing to the GaN growth at GaN and sapphire interface, and cause the more dislocation of epitaxial loayer, even if light extraction efficiency promotes to some extent, but the increase of epitaxial loayer dislocation can reduce the led chip life-span.In addition, the nano-scale patterns manufacturing cost is high, and industrialization is difficulty relatively, has also greatly limited it and has applied.This shows that the optimization of dimension of picture and LED performance also needs further research.
The structure of led chip comprises two kinds of upright method of hull section construction and upside-down methods of hull-section construction.In the structure GaN-based LED of traditional formal dress, the limited conductivity requirement of P-GaN layer precipitates a current extending (Ni/Au, ITO etc.) again on P-GaN layer surface.This current extending meeting absorption portion photon, the light extraction efficiency of reduction chip.Forward LED need to be taken into account, balanced balanced current is expanded and transmissivity, so that performance of devices is subject to certain restrictions.In addition, be positioned at the light-emitting window of forward LED because lighttight electrode gets an electric shock, also can produce certain impact to the light extraction efficiency of chip.By contrast, for the led chip of inverted structure, if choose the lower substrate of the absorption coefficient of light as light-emitting window, the barrier effect of the fine elimination electrode pair light of energy.LumlledsLighting company adopted Sapphire Substrate as light-emitting window, utilized the extremely low advantage of the sapphire absorption coefficient of light effectively to eliminate the barrier effect of electrode pair light.Sapphire refractive index (1.75) as light-emitting window differs less with air refraction simultaneously, is difficult for total reflection occurs, and also is conducive to improve extraction efficiency.
Even if the hemisphere patterned substrate has increased substantially the light extraction efficiency of LED, but mostly adopt positive assembling structure for the hemisphere graph substrate in the application of led chip at present; The researcher also lacks the discussion of parameter (comprising bottom surface radius and the Distances Between Neighboring Edge Points) development system for hemispherical pattern, the hemispherical pattern adopting parameters is not yet formed the system of a system.Therefore, how to give full play to the bright dipping advantage of hemispherical pattern, the optimization problem that solves size is just reaching, the On The Choice of inverted structure needs to be resolved hurrily.
Summary of the invention
For the above-mentioned shortcoming and deficiency that overcomes prior art, the object of the present invention is to provide a kind of patterned substrate for the led chip inverted structure, it takes full advantage of the bright dipping advantage of hemispherical pattern, and light extraction efficiency is higher than formal dress hemisphere patterned substrate led chip.Another object of the present invention is to provide the led chip that comprises above-mentioned patterned substrate for inverted structure.
Purpose of the present invention realizes by following scheme:
A kind of patterned substrate for the LED inverted structure, the pattern of substrate is comprised of the identical hemisphere of a plurality of shapes that is arranged in substrate surface; The height of each hemisphere equates with the bottom surface radius r of hemisphere; The Distances Between Neighboring Edge Points d of adjacent hemisphere is 0.7 ~ 1.0 times of bottom surface radius r of described hemisphere.
The refractive index of described backing material is 1.1 ~ 2.
The hemisphere that described a plurality of shape is identical adopts the rectangular arranged mode.
The hemisphere that described a plurality of shape is identical adopts the hexagonal arrangement mode.
A kind of led chip comprises the patterned substrate for the LED inverted structure described above.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) the present invention goes out optical analog by the parameter (comprising bottom surface radius r and Distances Between Neighboring Edge Points d) of hemispherical pattern is carried out LED, form a cover about the affect system of each parameter of hemispherical pattern on the LED light extraction efficiency, for choosing of size in the reality processing provides foundation.
(2) the present invention sums up the bright dipping advantage of hemispherical pattern, has formulated the selection of dimension principle of a cover for the patterned substrate hemispherical pattern of LED inverted structure, compares with formal dress hemisphere patterned substrate led chip, and luminous flux promotes 6 ~ 11%.
(3) the present invention selects the low backing material of weak absorption coefficient, refractive index as the light-emitting window of inverted structure, and need not substrate desquamation after the upside-down mounting can use, easy to process; And the backing material that refractive index is low can also weaken all reflective light phenomenon, improves the light extraction efficiency of LED.
(4) the present invention adopts the pattern parameter of optimization, avoids the too large or too little of heap of stone brilliant defective that causes of Distances Between Neighboring Edge Points, has further improved crystalloid amount of heap of stone, thereby has improved the internal quantum efficiency of LED.
Description of drawings
Fig. 1 is the schematic diagram of the led chip of embodiment 1.
Fig. 2 is the schematic diagram of patterned substrate of the led chip of embodiment 1.
Fig. 3 is the arrangement mode schematic diagram that the half sphere pattern of the substrate of embodiment 1 adopts.
Fig. 4 is the schematic diagram that the patterned substrate of embodiment 1 is applied to the LED inverted structure.
Fig. 5 is the arrangement mode schematic diagram that the half sphere pattern of the substrate of embodiment 2 adopts.
Fig. 6 is that each face luminous flux of led chip of the present invention is with the Distances Between Neighboring Edge Points changing trend diagram of hemisphere.
Fig. 7 is the total light flux of removing the bottom light flux of led chip of the present invention and removes the total light flux of top light flux with the changing trend diagram of hemispherical rim spacing.
Fig. 8 is that each face luminous flux of led chip of the present invention is with hemisphere bottom surface radius change tendency chart.
Fig. 9 is the total light flux of removing the bottom light flux of led chip of the present invention and removes the total light flux of top light flux with the changing trend diagram of hemisphere bottom surface radius.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Fig. 1 is the schematic diagram of the led chip of present embodiment, as shown in Figure 1, by the patterned sapphire substrate 11 that is arranged in order, N-type GaN layer 12, MQW quantum well layer 13, P type GaN layer 14 forms.
As shown in Figure 2, the patterned substrate of the led chip of present embodiment, the pattern of substrate is comprised of the identical hemisphere 18 of a plurality of shapes that are arranged in substrate surface; The height of hemisphere equates with the bottom surface radius r of corresponding hemisphere; The Distances Between Neighboring Edge Points d of adjacent hemisphere is 0.7 times of bottom surface radius r of described hemisphere; The bottom surface radius r of hemisphere is 2 μ m in the present embodiment; The hemisphere that described a plurality of shape is identical adopts hexagonal arrangement mode as shown in Figure 3.
Fig. 4 is the schematic diagram that the present embodiment patterned substrate is applied to the LED inverted structure.Each layer is followed successively by Sapphire Substrate 11, N-type GaN layer 12, MQW quantum well layer 13, P type GaN layer 14, N electrode 15, P electrode 16, base plate for packaging 17 among the figure.
Embodiment 2
The patterned substrate of the led chip of present embodiment, the refractive index of backing material are 1.1, and the pattern of substrate is comprised of the identical hemisphere of a plurality of shapes that is arranged in substrate surface; The height of hemisphere equates with the bottom surface radius r of corresponding hemisphere; The Distances Between Neighboring Edge Points d of adjacent hemisphere is 0.9 times of bottom surface radius r of described hemisphere; The bottom surface radius r of hemisphere is 2.8 μ m in the present embodiment; The hemisphere that described a plurality of shape is identical adopts rectangular arranged mode as shown in Figure 5.
Embodiment 3
The patterned substrate of the led chip of present embodiment, the refractive index of backing material are 2, and the pattern of substrate is comprised of the identical hemisphere of a plurality of shapes that is arranged in substrate surface; The height of each hemisphere equates with the bottom surface radius r of corresponding hemisphere; The Distances Between Neighboring Edge Points d of adjacent hemisphere is 1.0 times of bottom surface radius of described hemisphere; The bottom surface radius r of hemisphere is 3.0 μ m in the present embodiment; The hemisphere that described a plurality of shape is identical adopts the rectangular arranged mode.
Test case:
Adopt optical analysis software TracePro that the patterned substrate of led chip of the present invention is done simulation test, the simulation test process is as follows:
(1) substrate makes up: the modeling function that adopts TracePro to carry is realized the making of substrate, and substrate dimension is 600 μ m * 250 μ m * 100 μ m, is rectangular-shaped.
(2) hemispherical pattern is made: the modeling function that adopts TracePro to carry is realized the making of hemispherical pattern, the height of each hemisphere equates with the bottom surface radius r of corresponding hemisphere, the Distances Between Neighboring Edge Points d of adjacent hemisphere is 0.7 ~ 1.0 times of bottom surface radius r of described hemisphere, rectangular arranging.
(3) epitaxial loayer makes up: the modeling function that adopts TracePro to carry is realized the making of N-type GaN layer, MQW quantum well layer, P type GaN layer, N-type GaN layer is of a size of 600 μ m * 250 μ m * 4 μ m, the MQW quantum well layer is of a size of 600 μ m * 250 μ m * 50nm, P type GaN layer is of a size of 600 μ m * 250 μ m * 3 μ m, all is rectangular-shaped.
(4) target surface makes up: the modeling function that adopts TracePro to carry is realized the making of six layers of target surface, six layers of target surface place respectively upper and lower, the front, rear, left and right direction of led chip, upper and lower target surface is of a size of 600 μ m * 250 μ m * 3 μ m, forward and backward target surface (the relatively long limit of chip) is of a size of 600 μ m * 104.41 μ m * 3 μ m, and left and right target surface (the relatively minor face of chip) is of a size of 250 μ m * 104.41 μ m * 3 μ m.
(5) N-type GaN layer and graph substrate contact-making surface corresponding pattern make up: adopt the difference of TracePro to subtract function realization N-GaN layer corresponding pattern structure.
(6) setting parameter of each material layer: the refractive index of Sapphire Substrate is 1.67, and N-type GaN, MQW quantum well, P type GaN material refractive index are 2.45, four all for the light of 450nm, and temperature setting is set to 300K, does not consider to absorb the impact with extinction coefficient.
(7) the quantum well layer surface source of light is set: the quantum well layer upper and lower surface respectively arranges a surface source of light attribute, the emission form is luminous flux, and the rink corner is distributed as the luminous field pattern of Lambertian, and luminous flux is 5000a.u., several 3000 of total light, several 10 of minimum light.
(8) ray tracing: utilize the subsidiary system that clears off of software, the led chip model of above-mentioned structure is carried out ray tracing, obtain respectively the luminous flux data of top, bottom, side.
Test result is shown in Fig. 6 ~ 8.
Fig. 6 be each face luminous flux of led chip with the Distances Between Neighboring Edge Points changing trend diagram of hemisphere, the bottom surface radius r of hemisphere is 2.8 μ m.Each curve tendency shows among the figure: the bottom surface radius r is that the ambient light flux of the hemispherical pattern substrate LED of 2.8 μ m roughly increases with the increase of Distances Between Neighboring Edge Points, and top light flux and bottom light flux reduce with the increase of Distances Between Neighboring Edge Points substantially, and the bottom light flux all manys about 200a.u. than the top light flux, illustrates that the hemisphere graph substrate LED Billy that utilizes the bottom bright dipping has more advantage with the hemisphere graph substrate LED of top bright dipping.Increase to when equating with the bottom surface radius r at Distances Between Neighboring Edge Points d, although the bottom light flux slightly descends, the ambient light flux significantly promotes, and both summations increase.
Fig. 7 is the total light flux of removing the bottom light flux of led chip among Fig. 6 and removes the total light flux of top light flux with the changing trend diagram of hemispherical rim spacing.Remove the total light flux of bottom light flux, the total light flux total light flux of corresponding positive assembling structure LED, inverted structure LED respectively of removing the top light flux.Each curve tendency shows among the figure: the total light flux of positive assembling structure LED and inverted structure LED roughly all slowly increases with the increase of Distances Between Neighboring Edge Points d, and the total light flux of inverted structure LED is that 2.8 μ m places reach peak value at Distances Between Neighboring Edge Points d, about 5350a.u.; The total light flux of positive assembling structure is about 2.9 μ m places at Distances Between Neighboring Edge Points d and reaches peak value, about 5050a.u..Can find out, when Distances Between Neighboring Edge Points d equals hemisphere bottom surface radius, hemisphere patterned substrate LED has shown the best light effect that goes out, and Distances Between Neighboring Edge Points d (being that Distances Between Neighboring Edge Points d is 0.7 ~ 1.0 times of bottom surface radius r of described hemisphere) in 2.0 ~ 2.8 mu m ranges, and its light efficiency all is in better level.If adopt the lower backing material (adopting sapphire material in the present embodiment) of the absorption coefficient of light, the hemisphere patterned substrate that above-mentioned material is made is applied to the LED inverted structure, compares with positive assembling structure, and luminous flux can improve 6 ~ 11%.
Fig. 8 is that each face luminous flux of led chip of the present invention is with the changing trend diagram of hemisphere bottom surface radius.Each curve tendency shows among the figure: equate with the bottom surface radius r of corresponding hemisphere at the height of guaranteeing each hemisphere, the Distances Between Neighboring Edge Points d of adjacent hemisphere is in 1.0 times of situations of bottom surface radius of hemisphere, increase along with hemisphere bottom surface radius, the ambient light flux of hemisphere patterned substrate LED is in rising trend, and reach 3.2 μ m and be tending towards later on saturation value, about 2900a.u. when the bottom surface radius.Top light flux and bottom light flux are with the increase of bottom surface radius, its variation tendency is roughly the same, and the bottom light flux is all greater than the top light flux, and all reaches peak value (the about 2450a.u. of bottom light flux, the about 2200a.u. of top light flux) at the about 2.9 μ m places of bottom surface radius.
Fig. 9 is the total light flux of removing the bottom light flux of led chip of the present invention and removes the total light flux of top light flux with the changing trend diagram of hemisphere bottom surface radius.Remove the total light flux of bottom light flux, the total light flux total light flux of corresponding positive assembling structure LED, inverted structure LED respectively of removing the top light flux.Each curve tendency shows among the figure: both are close with the variation tendency of hemisphere bottom surface radius change, be that 2.9 μ m places obtain peak value (total light flux of positive assembling structure LED is 5061a.u. at hemisphere bottom surface r all, the total light flux of inverted structure LED is 5332a.u.), but the total light flux of inverted structure LED is larger than positive assembling structure LED, it is about 6 ~ 10% that light efficiency improves, and illustrates that the hemisphere patterned substrate is more suitable for being applied to inverted structure LED.Be in 2.8 ~ 3.1 mu m ranges at hemisphere bottom surface radius, the total light flux of removing the top light flux all is in high value, can adjust Distances Between Neighboring Edge Points by choosing different bottom surfaces radius, avoid the too large or too little of heap of stone brilliant defective that causes of Distances Between Neighboring Edge Points in the real material epitaxial growth, further improve crystalloid amount of heap of stone, thereby improved the internal quantum efficiency of LED.
Above-described embodiment is the better execution mode of the present invention; but embodiments of the present invention are not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (5)
1. a patterned substrate that is used for the LED inverted structure is characterized in that the pattern of substrate is comprised of the identical hemisphere of a plurality of shapes that is arranged in substrate surface; The height of each hemisphere equates with the bottom surface radius r of hemisphere; The Distances Between Neighboring Edge Points d of adjacent hemisphere is 0.7 ~ 1.0 times of bottom surface radius r of described hemisphere.
2. the patterned substrate for the LED inverted structure according to claim 1 is characterized in that, the refractive index of backing material is 1.1 ~ 2.
3. the patterned substrate for the LED inverted structure according to claim 1 is characterized in that, the hemisphere that described a plurality of shapes are identical adopts the rectangular arranged mode.
4. the patterned substrate for the LED inverted structure according to claim 1 is characterized in that, the hemisphere that described a plurality of shapes are identical adopts the hexagonal arrangement mode.
5. a led chip is characterized in that, comprises such as each described patterned substrate for the LED inverted structure of claim 1 ~ 4.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610135A (en) * | 2003-10-21 | 2005-04-27 | 三星电机株式会社 | Light-emitting device and method of manufacturing the same |
| US20050221521A1 (en) * | 2004-03-30 | 2005-10-06 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device and method of manufacturing the same |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN202004040U (en) * | 2011-03-30 | 2011-10-05 | 重庆大学 | LED chip based on double-side substrate with concave holes and component-gradient buffer layer |
| CN202996887U (en) * | 2012-12-15 | 2013-06-12 | 华南理工大学 | Graphical substrate for reversely-assembled LED structures and LED chip |
-
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- 2012-12-15 CN CN2012105460587A patent/CN103035802A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610135A (en) * | 2003-10-21 | 2005-04-27 | 三星电机株式会社 | Light-emitting device and method of manufacturing the same |
| US20050221521A1 (en) * | 2004-03-30 | 2005-10-06 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device and method of manufacturing the same |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN202004040U (en) * | 2011-03-30 | 2011-10-05 | 重庆大学 | LED chip based on double-side substrate with concave holes and component-gradient buffer layer |
| CN202996887U (en) * | 2012-12-15 | 2013-06-12 | 华南理工大学 | Graphical substrate for reversely-assembled LED structures and LED chip |
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Application publication date: 20130410 |