CN103035640B - Array base palte and preparation method thereof, display unit - Google Patents
Array base palte and preparation method thereof, display unit Download PDFInfo
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- CN103035640B CN103035640B CN201210433732.0A CN201210433732A CN103035640B CN 103035640 B CN103035640 B CN 103035640B CN 201210433732 A CN201210433732 A CN 201210433732A CN 103035640 B CN103035640 B CN 103035640B
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- filter layer
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Abstract
The invention discloses a kind of array base palte, relate to Display Technique field, this array base palte comprises: insulated substrate and the pel array that is positioned at described insulated substrate top, also comprise: the chromatic filter layer between described insulated substrate and described pel array. A kind of display unit of making the method for above-mentioned array base palte and comprising above-mentioned array base palte is also disclosed. In array base palte of the present invention, chromatic filter layer is arranged on to the below of pel array, avoided character due to resin (Resin) material that cause with ITO electrode array base palte topmost and via hole between the bad problem of effect that contacts and other chromatic filter layer on being positioned at the impact of array base palte of its below.
Description
Technical field
The present invention relates to Display Technique field, particularly a kind of array base palte and making side thereofMethod, display unit.
Background technology
In prior art, for integrated chromatic filter layer (Color on array base palte (Array)Filter, C/F), thus after Array operation finishes, on tft array, form C/F.It is referred to as COA(ColorFilterOnArray), for the array base palte of COA type,Due to the character of resin (Resin) material, cause with the ITO electrode of topmost and via hole itBetween contact effect bad.
Due to the material of resin, the character of its high temperature that is out of patience, and with its underpart ITO electricityContact between the utmost point and adhesiving effect are not good, and are positioned at the graph layer on Array top(Patterning) still can be subject to the impact of bottom chromatic filter layer, and C/F is positioned at Array, also there is the problem to liquid crystal cell thick (CellGap) variable thickness that causes in top,Can there is harmful effect to display effect. Therefore need chromatic filter layer to improve.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is: how chromatic filter layer is set to avoid colored filterThe harmful effect that photosphere causes the layer being positioned on Array below this chromatic filter layer.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of array base palte, comprising: substratePel array with being positioned at described substrate top, also comprises: be positioned at described substrate and described pixelChromatic filter layer between array.
Wherein, described chromatic filter layer is arranged in corresponding described pel array pixel on described substrateThe below in region.
Wherein, described chromatic filter layer is arranged in corresponding described pel array pixel on described substrateOn the surface in region.
Wherein, on described substrate, in corresponding described pel array, the below of pixel region has and holdsThe space of described chromatic filter layer, described chromatic filter layer is arranged in described space.
Wherein, between described chromatic filter layer and described pel array, be also provided with transparent bufferingLayer.
Wherein, the public electrode of described pel array be positioned at described chromatic filter layer and substrate itBetween, the pixel electrode of described pel array is positioned at chromatic filter layer top.
Wherein, the pixel electrode of described pel array be positioned at described chromatic filter layer and substrate itBetween, the public electrode of described pel array is positioned at chromatic filter layer top.
The present invention also provides a kind of preparation method of array base palte, forms colored filter on substratePhotosphere figure forms pel array on the substrate forming after described colorized optical filtering layer pattern.
Wherein, the mode that forms colorized optical filtering layer pattern on described substrate comprises: at described baseOn the surface of plate, the pixel region of respective pixel array forms described colorized optical filtering layer pattern.
Wherein, the mode that forms colorized optical filtering layer pattern on described substrate comprises: adopt compositionTechnique is carried out etching to the pixel region of respective pixel array on described substrate, holds institute to formState the space of chromatic filter layer, in described space, form described colorized optical filtering layer pattern.
Wherein, on the substrate of making after described chromatic filter layer, make pel array before bag alsoDraw together and on substrate, form one deck cushion.
Wherein, also comprise make chromatic filter layer on substrate before: by composition technique in instituteThe pixel region of stating respective pixel array on substrate forms space; Then pass through composition technique rightAnswer the region that public electrode is corresponding to form common pattern of electrodes; Described public in described spaceOn electrode, form described colorized optical filtering layer pattern; On the substrate that is formed with described chromatic filter layerForm described pixel electrode, and retain the district that common pattern of electrodes is connected with described pel arrayTerritory; In the time forming described pel array, make described colorized optical filtering layer pattern be positioned at described common electricalBetween pixel electrode figure in utmost point figure and pel array.
Wherein, also comprise make chromatic filter layer on substrate before: by composition technique in instituteThe pixel region of stating respective pixel array on substrate forms space, then passes through composition technique rightAnswer the region of pixel electrode to form pixel electrode figure; Right on the substrate that is formed with pixel electrodeShould on described space, form colorized optical filtering layer pattern; Be formed with described colorized optical filtering layer patternOn substrate, form the figure of public electrode, and retain pixel electrode figure and described pel array companyThe region connecing, makes when described pel array described in described colorized optical filtering layer pattern is positioned at formingBetween common pattern of electrodes in pixel electrode figure and pel array.
The present invention also provides a kind of display unit, comprises the array base described in above-mentioned any onePlate.
(3) beneficial effect
In array base palte of the present invention, chromatic filter layer is arranged on to the below of pel array, avoidsDue to the character of resin (Resin) material that cause with ITO electrode array base palte topmostAnd the bad problem of contact effect between via hole and other chromatic filter layer are to being positioned at its belowThe impact of array base palte.
Brief description of the drawings
Fig. 1 is the structural representation of a kind of array base palte of the embodiment of the present invention 1;
Fig. 2 is the structural representation of a kind of array base palte of the embodiment of the present invention 2;
Fig. 3 is aobvious to photoresist exposure before etch substrate while making in embodiment 2 array base palteMovie queen's schematic diagram;
Fig. 4 etches and holds colorized optical filtering while making in embodiment 2 array base palte on substrateThe schematic diagram in the space of layer;
Fig. 5 holds chromatic filter layer while making array base palte in embodiment 2 on substrateSchematic diagram in space after filling color filter layer;
Fig. 6 is the structural representation of a kind of array base palte of the embodiment of the present invention 3;
Fig. 7 is the structural representation of a kind of array base palte of the embodiment of the present invention 4;
Fig. 8 etches and holds colorized optical filtering while making in embodiment 4 array base palte on substrateThe schematic diagram in the space of layer;
Fig. 9 is depositing metal films applying after photoresist exposure imaging on the substrate of Fig. 8Schematic diagram;
Figure 10 is etching metallic film on the basis on the substrate of Fig. 9, is holding chromatic filter layerSpace in form the schematic diagram of public electrode;
Figure 11 be on the basis of Figure 10 substrate in space filling color filter layer, and at colourOn filter layer, form the schematic diagram of pixel electrode;
Figure 12 is the structural representation of the another kind of array base palte of the embodiment of the present invention 4.
Detailed description of the invention
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is done further in detailDescribe. Following examples are used for illustrating the present invention, but are not used for limiting the scope of the invention.
Embodiment 1
The array base palte of the present embodiment as shown in Figure 1, comprising: substrate 1(can be also quartz etc.The transparent insulation substrate of material), be positioned at chromatic filter layer 3 on substrate 1, be positioned at colored filterThe pel array 4 of photosphere 3 tops is twisted-nematic demonstration (Twisted in the present embodimentNematic, TN) pel array. Pel array 4 comprise thin film transistor (TFT) TFT region A andPixel region B, the chromatic filter layer 3 in the present embodiment is positioned at respective pixel region B on substrate 1Position. In order to make the below surfacing of pel array 4, preferably, at chromatic filter layer 3And between pel array 4, also form transparent cushion 5.
The manufacturing process of the array base palte of the present embodiment is as follows:
By deposition, exposure, development, etching and a series of composition technique such as peel off at substrate 1The pixel region B of upper respective pixel array 4 forms chromatic filter layer 3, then at chromatic filter layer 3On form successively each layer of pel array 4. Preferably, at the substrate 1 that forms chromatic filter layer 3The cushion 5 that upper formation is transparent, provides even curface for preparing pel array 4. Certainly coloredFilter layer 3 can be red resin layer, can be also green resin, or blue resins, HuangChromoresin, above choosing is for those skilled in the art can carry out according to concrete product designCombination configures, thereby realizes the object of color displays.
In the array base palte of the present embodiment, be positioned at the below of pel array 4 due to chromatic filter layer 3,While having avoided chromatic filter layer above pel array due to chromatic filter layer resin (Resin)The character of material that cause with ITO array base palte topmost and via hole between contact effect notGood problem; And chromatic filter layer 3 can not produce bad shadow to each level of pel array 4Ring; Thereby reduce the impact of resin bed on thickness of liquid crystal box (CellGap), thereby improvedDisplay effect.
Wherein pel array 4 can be that twisted-nematic shows (TwistedNematic, TN), faceInternal switch mode (In-PlaneSwitching, IPS), multi-dimensional electric field ADS(ADvancedSuperDimensionSwitch) pel array of isotype.
Embodiment 2
The array base palte of the present embodiment as shown in Figure 2, basic with the array base-plate structure of embodiment 1Identical, different is that substrate 1 is provided with the space 2 that holds chromatic filter layer 3, chromatic filter layer 3Be formed in space 2.
The array base palte manufacturing process of the present embodiment is as follows:
As shown in Figure 3, by forming space 2 at substrate 1 by composition technique, at substrate 1Upper coating photoresist 100, and to its exposure imaging, respective pixel array 4 on the substrate 1 that develops to fallThe photoresist 100 of pixel region B, and etch substrate 1, forms space 2 as shown in Figure 4.Then filling color filter layer 3 in space 2, forms substrate as shown in Figure 5. At the base of Fig. 5On plate, form successively cushion 5 and pel array 4, or directly on the substrate of Fig. 5, form pixelArray 4.
Because chromatic filter layer 3 is formed in space 2, with respect to the array base palte of embodiment 1,The thickness attenuation of the array base palte of the present embodiment, thus make product lightening. Preferably, coloured silkColor filtering optical layer 3 fills up whole space 2, and makes the surfacing of substrate 1, thereby removes cushion 5,Pel array 4 is formed directly on substrate 1, make whole array base palte thickness become thinner.
Wherein the pel array 4 in the present embodiment can be also TN, IPS, ADS isotypePel array.
Embodiment 3
ADS is the wide visual angle of plane electric fields core technology-senior super dimension switch technology(ADvancedSuperDimensionSwitch), can improve the picture of TFT-LCD productQuality, has high-resolution, high permeability, low-power consumption, wide visual angle, high aperture, low lookPoor, without advantages such as water of compaction ripples (pushMura). A senior super dimension switch technology is logicalCross electric field and gap electrode layer and tabular electricity that in same plane, gap electrode edge producesThe electric field that utmost point interlayer produces forms multi-dimensional electric field, makes in liquid crystal cell between gap electrode, electrode just goes upFang Suoyou aligned liquid-crystal molecule can both produce rotation, thereby has improved liquid crystal operating efficiency and increasedLarge light transmission efficiency. The present embodiment provides a kind of array base palte of ADS pattern, specifically rightThe improvement of the ADS pattern array substrate in embodiment 1. For the array base palte of ADS pattern,Pixel electrode and public electrode are all positioned on array base palte, are separated with insulating barrier between between the two,In the array base palte of the present embodiment, utilize chromatic filter layer as this insulating barrier. Concrete structure is as figureShown in 6, comprising: the pel array 6 of substrate 1, chromatic filter layer 3, ADS pattern. ADSThe pel array 6 of pattern comprises TFT region A and pixel region B. The pel array 6 of ADS patternPublic electrode 61 be positioned at the position of the pixel region B on substrate 1, chromatic filter layer 3 formsOn public electrode 61, other level of the pel array 6 of pixel electrode 62 and ADS patternStructure is positioned at the top of chromatic filter layer 3. In order to make the below table of pel array 6 of ADS patternFace is smooth, preferably, between chromatic filter layer 3 and pel array 6, also forms transparent bufferingLayer 5.
The manufacturing process of the array base palte of the present embodiment is as follows:
By film forming, exposure, development, etching and a series of composition technique such as peel off at substrate 1The pixel region B of upper corresponding A DS pattern pixel array 6 forms public electrode 61, then publicOn electrode 61, form chromatic filter layer 3, then form successively pel array 6 on chromatic filter layer 3Each layer. Preferably, on the substrate 1 that forms chromatic filter layer 3, form transparent cushion 5,Provide even curface for preparing pel array 6.
In the array base palte of the ADS pattern of the present embodiment, pixel electrode 62 is slit-shaped, common electricalThe utmost point 61 is block, it will be understood by those skilled in the art that in actual applications pixel electrodeCan be tabular or slit-shaped, public electrode be also so, pixel electrode and public electrodeUp and down order can put upside down, but must be slit-shaped at upper electrode, under electrode be plateShape. Preferably, in the present embodiment, the TFT region A of pel array 6 is top gate structure, pixelElectrode 62 directly overlaps with the drain electrode of TFT, and TFT region can be also bottom grating structure certainly, asElement electrode 62 overlaps or is connected by drain via with layer with drain electrode. Said structure and systemArray base-plate structure and the preparation method of making method and Fig. 6 are similar, repeat no more herein.
The array base palte of the ADS pattern of the present embodiment utilizes chromatic filter layer as public electrodeInterlayer interval with pixel electrode, does not need extra material, has saved with respect to embodiment 1Cost and manufacture craft.
Embodiment 4
The present embodiment provides a kind of array base palte of ADS pattern, specifically in embodiment 2The improvement of ADS pattern array substrate. For the array base palte of ADS pattern, pixel electrode andPublic electrode is all positioned on array base palte, is separated with insulating barrier between between the two, at the present embodimentIn array base palte, utilize chromatic filter layer as this insulating barrier. The present embodiment is with chromatic filter layer shapeIn the space that becomes to be etched at substrate, and public electrode is positioned at the ADS array of pixel electrode belowSubstrate is example, and concrete structure as shown in Figure 7, comprising: substrate 1, chromatic filter layer 3,The pel array 6 of ADS pattern. The pel array 6 of ADS pattern comprises TFT region A and pixelRegion B, on substrate 1, the position of respective pixel region B is provided with the sky that holds chromatic filter layer 3Between 2, the public electrode 61 of the pel array 6 of ADS pattern is formed on chromatic filter layer 3 in space 2Lower floor's (wherein the region C of public electrode 61 is the part being connected with public electrode wire), pixelElectrode 62 is positioned on chromatic filter layer 3.
The array base palte manufacturing process of the present embodiment is as follows:
As shown in Figure 8, by apply photoresist on substrate 1, and to its exposure imaging, developFall the photoresist of the pixel region B of corresponding A DS pattern pixel array 6 on substrate 1, and etching basePlate 1, forms space 2. As shown in Figure 9, then form transparent metal film, and at transparent goldBelong on film and apply photoresist, photoresist exposure imaging is removed to the photoresist of TFT region A,And etch away the transparent metal film exposing, and remove remaining photoresist, form common electricalThe utmost point 61, as shown in figure 10. In space 2, form afterwards chromatic filter layer 3, make chromatic filter layerFlush (the base after forming chromatic filter layer 3 alternatively, of 3 surface and substrate 1Plate surface forms cushion, to keep substrate 1 surfacing), then form transparent metal film,And apply photoresist, and to photoresist exposure imaging, and etching is carried out in the region exposing, goFall remaining photoresist, form the pixel electrode 62 of slit-shaped, as shown in figure 11. Figure 11'sOn substrate, form other hierarchical structure of ADS pattern pixel array 6.
The ADS array base palte that is positioned at public electrode below for pixel electrode, its structure is as Figure 12Shown in. After etching space 2 when making on substrate 1, first form pixel electrode 62, then shapeBecome chromatic filter layer 3, after formation chromatic filter layer 3, form again public electrode 61 and pel array 6Other hierarchical structures.
In the array base palte of the ADS pattern of the present embodiment, pixel electrode 62 is tabular, public electrode61 is slit-shaped, it will be understood by those skilled in the art that in actual applications pixel electrodeCan be tabular or slit-shaped, public electrode be also so, pixel electrode and public electrodeUp and down order can put upside down, but must be slit-shaped at upper electrode, under electrode be plateShape, the array base-plate structure of its structure and preparation method and Fig. 7 and Figure 12 and preparation method classSeemingly, repeat no more herein.
The array base palte of the ADS pattern of the present embodiment utilizes chromatic filter layer as public electrodeInterlayer interval with pixel electrode, does not need extra material, has saved with respect to embodiment 2Cost and manufacture craft.
Embodiment 5
A kind of display unit is provided in the present embodiment, has comprised array arbitrary in embodiment 1 ~ 4Substrate. Described display unit can be: liquid crystal panel, Electronic Paper, LCD TV, liquid crystalShow any product or parts with Presentation Function such as device, DPF, mobile phone, panel computer.
Above embodiment is only for the present invention is described, and limitation of the present invention is not relevantThe those of ordinary skill of technical field, without departing from the spirit and scope of the present invention,Can also make a variety of changes and modification, therefore all technical schemes that are equal to also belong to the present inventionCategory, scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. an array base palte, comprising: substrate and the pel array that is positioned at described substrate top,It is characterized in that, also comprise: the colorized optical filtering between described substrate and described pel arrayLayer,
Wherein, pel array comprises thin film transistor (TFT) TFT region and pixel region, described coloured silkColor filtering optical layer is only arranged in the below of corresponding described pel array pixel region on described substrate,
Described in described substrate, in corresponding described pel array, the below of pixel region has and holdsThe space of chromatic filter layer, described chromatic filter layer is arranged in described space, on substrate, is provided withDepression, chromatic filter layer is arranged in depression.
2. array base palte as claimed in claim 1, is characterized in that, described colorized optical filteringBetween layer and described pel array, be also provided with transparent cushion.
3. the array base palte as described in any one in claim 1 and 2, is characterized in that,The public electrode of described pel array between described chromatic filter layer and substrate, described pixelThe pixel electrode of array is positioned at chromatic filter layer top.
4. the array base palte as described in any one in claim 1 and 2, is characterized in that,The pixel electrode of described pel array between described chromatic filter layer and substrate, described pixelThe public electrode of array is positioned at chromatic filter layer top.
5. a preparation method for array base palte described in any one in claim 1 to 4, itsBe characterised in that, on substrate, form colorized optical filtering layer pattern, forming described chromatic filter layer figureOn substrate after shape, form pel array, pel array comprise thin film transistor (TFT) TFT region andPixel region,
The mode that forms colorized optical filtering layer pattern on described substrate comprises: at the table of described substrateOn face, only the pixel region of respective pixel array forms described colorized optical filtering layer pattern,
Wherein, in described substrate, in corresponding described pel array, the below of pixel region has and holdsThe space of described chromatic filter layer, described chromatic filter layer is arranged in described space, on substrate, establishesBe equipped with depression, chromatic filter layer is arranged in depression.
6. the preparation method of array base palte as claimed in claim 5, is characterized in that,The mode that forms colorized optical filtering layer pattern on described substrate comprises: adopt composition technique to described baseOn plate, the pixel region of respective pixel array carries out etching, holds described chromatic filter layer to formSpace, in described space, form described colorized optical filtering layer pattern.
7. the preparation method of array base palte as claimed in claim 5, is characterized in that,Make before making pel array on the substrate after described chromatic filter layer and be also included on substrateForm one deck cushion.
8. the preparation method of the array base palte as described in any one in claim 5～7, its spyLevy and be, also comprise make chromatic filter layer on substrate before: by composition technique describedOn substrate, the pixel region of respective pixel array forms space; Then pass through composition technique in correspondenceThe region that public electrode is corresponding forms common pattern of electrodes; Described common electrical in described spaceThe extremely described colorized optical filtering layer pattern of upper formation; Shape on the substrate that is formed with described chromatic filter layerBecome described pixel electrode, and retain the region that common pattern of electrodes is connected with described pel array;In the time forming described pel array, make described colorized optical filtering layer pattern be positioned at described public electrodeBetween pixel electrode figure in figure and pel array.
9. the preparation method of the array base palte as described in any one in claim 5～7, its spyLevy and be, also comprise make chromatic filter layer on substrate before: by composition technique describedOn substrate, the pixel region of respective pixel array forms space, then passes through composition technique in correspondenceThe region of pixel electrode forms pixel electrode figure; Corresponding on the substrate that is formed with pixel electrodeOn described space, form colorized optical filtering layer pattern; At the base that is formed with described colorized optical filtering layer patternOn plate, form the figure of public electrode, and retain pixel electrode figure and be connected with described pel arrayRegion, make described colorized optical filtering layer pattern be positioned at described picture forming when described pel arrayBetween common pattern of electrodes in element electrode pattern and pel array.
10. a display unit, is characterized in that, comprises as any one in claim 1～4Described array base palte.
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| CN106646969A (en) * | 2016-11-22 | 2017-05-10 | 深圳市华星光电技术有限公司 | COA type liquid crystal panel and manufacturing method thereof |
| CN113485039B (en) * | 2021-05-31 | 2022-04-19 | 惠科股份有限公司 | Array substrate and display panel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101435961A (en) * | 2007-11-15 | 2009-05-20 | 北京京东方光电科技有限公司 | TFT-LCD color film / array substrate, liquid crystal display panel and method for producing same |
| CN101819348A (en) * | 2009-02-26 | 2010-09-01 | 北京京东方光电科技有限公司 | Horizontal electric field mode color film substrate and manufacturing method thereof |
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| JP5273384B2 (en) * | 2009-07-09 | 2013-08-28 | 株式会社ジャパンディスプレイ | Liquid crystal display |
| TW201200948A (en) * | 2010-06-22 | 2012-01-01 | Au Optronics Corp | Pixel structure and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101435961A (en) * | 2007-11-15 | 2009-05-20 | 北京京东方光电科技有限公司 | TFT-LCD color film / array substrate, liquid crystal display panel and method for producing same |
| CN101819348A (en) * | 2009-02-26 | 2010-09-01 | 北京京东方光电科技有限公司 | Horizontal electric field mode color film substrate and manufacturing method thereof |
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