CN106324880B - The production method of crystal liquid substrate - Google Patents

The production method of crystal liquid substrate Download PDF

Info

Publication number
CN106324880B
CN106324880B CN201610891063.XA CN201610891063A CN106324880B CN 106324880 B CN106324880 B CN 106324880B CN 201610891063 A CN201610891063 A CN 201610891063A CN 106324880 B CN106324880 B CN 106324880B
Authority
CN
China
Prior art keywords
substrate
area
transparent area
organic coating
exposure region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610891063.XA
Other languages
Chinese (zh)
Other versions
CN106324880A (en
Inventor
刘国和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL Huaxing Photoelectric Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201610891063.XA priority Critical patent/CN106324880B/en
Publication of CN106324880A publication Critical patent/CN106324880A/en
Application granted granted Critical
Publication of CN106324880B publication Critical patent/CN106324880B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • G02F1/133516Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133357Planarisation layers

Abstract

The present invention provides a kind of production method of crystal liquid substrate, organic insulation flatness layer is formed on color filter film using halftone mask technology, so that the corresponding height being located in the blue pixel area of organic insulation flatness layer is located at the red pixel area than corresponding, height in green pixel area is high, so as to be effectively improved large scale, the display Mura of height parsing liquid crystal display device, reduce parasitic capacitance, while promoting charge efficiency, maintain the normal box thickness parameter of liquid crystal display device, display color difference and transmitance is effectively avoided to reduce problem, guarantee the optical quality of liquid crystal display device.

Description

The production method of crystal liquid substrate
Technical field
The present invention relates to field of display technology more particularly to a kind of production methods of crystal liquid substrate.
Background technique
Active Thin Film Transistor-LCD (Thin Film Transistor-LCD, TFT-LCD) obtains in recent years To development at full speed and it is widely applied.Liquid crystal display device on existing market is largely backlight liquid crystal display dress It sets comprising liquid crystal display panel and backlight module (backlight module).Usual liquid crystal display panel is by color membrane substrates (CF, Color Filter Substrate), thin film transistor base plate (TFT, Thin Film Transistor Substrate), liquid crystal (LC, Liquid Crystal) and the sealing frame being sandwiched between color membrane substrates and thin film transistor base plate Glue (Sealant) composition.
With consumer to liquid crystal display device require it is higher and higher, TFT-LCD just gradually to large scale, high-res, The directions such as curved-surface display are developed.As liquid crystal display device size increases, by liquid crystal cell box thick (cell gap) homogeneity not Display brightness caused by good uneven (Mura) etc. is bad will be more obvious.Therefore, in the production of large scale liquid crystal display panel In the process, it has been formed on the substrate of thin film transistor (TFT) it is generally necessary to which covering layer of transparent organic insulating film is flat as organic insulation Smooth (planarization, PLN) layer prevents electric field from interfering with each other, to change the planarization of lower layer's film surface so as to effective Improve the display Mura of the liquid crystal display device as caused by orographic factor, reduce parasitic capacitance, reduces by electric loading (RC Loading the displays such as flashing caused by) excessive are abnormal, promote the taste of display device.
Color membrane substrates are usually made of black matrix and colored filter etc., wherein colored filter includes red (R), green (G), the color blocking unit of blue (B) three color, a pixel electrode of each color blocking unit all corresponding array substrates, and black matrix is then right Answer signal wire and the thin film transistor (TFT) etc. of array substrate.And COA (Color Filter on Array) technology is then to filter colour Mating plate prepares the technology in array substrate.The region of the corresponding red resistance unit of liquid crystal display panel is referred to as red sub- picture below Element, the region of corresponding green resistance unit are referred to as green sub-pixels, and the region of corresponding blue resistance unit is referred to as blue subpixels.
In TFT-LCD, the transmitance of liquid crystal is influenced by 2 Δ nd/ λ, and wherein Δ n is the birefringence of liquid crystal, and d is liquid The thickness of crystal layer, that is, box is thick, and λ is the wavelength of light.If the thickness of liquid crystal layer of corresponding each sub-pixel is identical, due to three color of red, green, blue The λ of light is different, therefore liquid crystal is all different in the transmitance of red, green, blue sub-pixels, to will lead to table after three kinds of pixel mixing Revealing the color come and required color has difference, and visually quality reduces.Therefore, a kind of existing COA type liquid as shown in Fig. 1 The structure of crystal panel, the film thickness of the red color resistance unit 101 of colored filter 100 and green color blocking unit 102 in liquid crystal display panel Quite, the film thickness of blue color blocking unit 103 is than red color resistance unit 101 and high 0.1-0.2 μm or so of green color blocking unit 102, So that the thickness of liquid crystal layer relative reduction of corresponding blue subpixels, so that when liquid crystal corresponds to red, green, blue sub-pixels Maintain identical transmitance.
However, as shown in Fig. 2, it is organic exhausted when being formed on colored filter 100 in large size TFT-LCD technology It is color with good levelability since organic insulation flatness layer 200 is usually organic photoresist material when edge flatness layer 200 The landform of colo(u)r filter 100 is compared to the structure for not adding organic insulation flatness layer 200, it will becomes relatively flat, liquid crystal layer 300 It is identical in the thickness of each sub-pixel, such TFT-LCD just will appear colour cast, transmitance reduce the problems such as, seriously affect display product Matter.
Summary of the invention
The purpose of the present invention is to provide a kind of production methods of crystal liquid substrate, using halftone mask (Half Tone Mask, HTM) technology, it solves to cause the liquid for blue pixel area by the levelability of PLN layer material in existing TFT-LCD Crystal layer thickness problem bigger than normal.
To achieve the above object, the present invention provides a kind of production method of crystal liquid substrate, includes the following steps:
Step 1 provides a substrate, and the substrate is equipped with one layer of color filter film, and the color filter film includes several Red color resistance unit, green color blocking unit and blue color blocking unit are coated with a layer photoresist material on the color filter film Material forms organic coating;
Step 2 provides a halftone mask, and the halftone mask is corresponded to and is placed in above the substrate, in the base Marked off on plate respectively red pixel area corresponding with several red, greens, blue color blocking unit, green pixel area, Blue pixel area and the pixel separation area between the blue pixel area and red pixel area, green pixel area;The light Cover has the first transparent area corresponding with red, the green pixel area, and with the blue pixel area corresponding second Transparent area;
The organic coating is exposed using the halftone mask, corresponding first on the organic coating, the Two transparent areas are respectively formed the first, second exposure region, wherein the light transmittance of second transparent area is higher than the saturating of the first transparent area Light rate, so that the depth of exposure of the second exposure region is higher than the depth of exposure of the first exposure region;
Step 3 provides developer solution, is developed using the developer solution to the organic coating, due to the second exposure region Depth of exposure be higher than the depth of exposure of the first exposure region, thus after the organic coating is developed, the on the organic coating The height of two exposure regions is higher than the height of first exposure region;
Step 4 carries out high-temperature baking to the organic coating, solidifies the organic coating sufficiently, forms organic insulation Flatness layer.
The halftone mask provided in the step 2, first transparent area is with the second transparent area in the corresponding pixel It is connected directly above spacer region.
The halftone mask provided in the step 2, between first transparent area and the second transparent area also have with The corresponding third transparent area in the pixel separation area, wherein the light transmittance of the third transparent area is higher than the second transparent area Light transmittance, to further include corresponding to third transparent area on the organic coating to form third exposure region, institute in the step 2 The depth of exposure for stating third exposure region is higher than the depth of exposure of the second exposure region;In the step 3, the organic coating is developed Afterwards, on the organic coating third exposure region height be higher than second exposure region height.
The light transmittance of second transparent area is 5%-20% higher than the light transmittance of the first transparent area.
The light transmittance of second transparent area is 5%-20% higher than the light transmittance of the first transparent area;The third transparent area Light transmittance is 5%-20% higher than the light transmittance of second transparent area.
The substrate provided in the step 1 be tft array substrate, the substrate include underlay substrate and be set to substrate base Tft array layer between plate and color filter film.
In the step 1, the viscosity of the Other substrate materials between 3.0-5.0cp, solid content 15-25wt% it Between;
The step 1 further includes after being coated with a layer photoresist material on color filter film, to the light on color filter film Photoresist material is successively dried in vacuo and electric hot plate heating, to form organic coating, the film thickness of the organic coating exists Between 1.0-5.0 μm;
Wherein, to the heating temperature range of Other substrate materials progress electric hot plate heating between 90-120 DEG C, heating time Between 80-150s.
In the step 3, developer solution using the TMAH solution of 0.04wt%, 2.38wt% TMAH solution or The KOH solution of 0.04wt%, developing time is between 60-120s.
In the step 4, high-temperature baking, high-temperature baking time are carried out to the organic coating at a temperature of 220-240 DEG C For 20-30min.
The blue color blocking unit is 0.1-0.2 μm higher than the red color resistance unit, green color blocking unit;
The organic insulation flatness layer formed in the step 4, the corresponding height being located in the blue pixel area is than corresponding to Height in the red pixel area, green pixel area is 0.1-0.2 μm high.
Beneficial effects of the present invention: the production method of crystal liquid substrate of the invention, using halftone mask technology in colour Organic insulation flatness layer is formed on filter coating, so that the corresponding height ratio being located in the blue pixel area of organic insulation flatness layer The corresponding height in the red pixel area, green pixel area is high, so as to be effectively improved large scale, high desorbed solution The display Mura of crystal device reduces parasitic capacitance, while promoting charge efficiency, maintains the normal box of liquid crystal display device Thick parameter effectively avoids display color difference and transmitance from reducing problem, guarantees the optical quality of liquid crystal display device.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is a kind of existing structural schematic diagram of COA type liquid crystal display panel;
Fig. 2 is that colorized optical filtering on piece is provided with machine insulation by the prior art in COA type liquid crystal display panel shown in FIG. 1 Schematic diagram after flatness layer;
Fig. 3 is the flow diagram of the production method of crystal liquid substrate of the invention;
Fig. 4 is the schematic diagram of the step 2 of the first embodiment of the production method of crystal liquid substrate of the invention;
Fig. 5 is the schematic diagram of the step 3 of the first embodiment of the production method of crystal liquid substrate of the invention;
Fig. 6 is the schematic diagram of the step 2 of the second embodiment of the production method of crystal liquid substrate of the invention;
Fig. 7 is the schematic diagram of the step 3 of the second embodiment of the production method of crystal liquid substrate of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention Example and its attached drawing are described in detail.
Referring to Fig. 3, the present invention provides a kind of production method of crystal liquid substrate, wherein the first embodiment of the present invention is specific Include the following steps:
Step 1 provides a substrate 10, and the substrate 10 is equipped with one layer of color filter film 11, the color filter film 11 Including several red color resistance units 111, green color blocking unit 112 and blue color blocking unit 113, in the color filter film 11 Then Other substrate materials on color filter film 11 are successively dried in vacuo (Vacuum by one layer photoresist material of upper coating Dry, VCD) and electric hot plate heating (Hot Plate, HP), form organic coating 20.
Specifically, the substrate 10 can be common color membrane substrates, or tft array substrate, in the present embodiment In, the substrate 10 provided in the step 1 is tft array substrate, and the substrate 10 is including underlay substrate and is set to underlay substrate Tft array layer between color filter film 11, i.e., the described substrate 10 are COA type tft array substrate.
Specifically, the blue color blocking unit 113 and the red, green color blocking unit 111,112 are mutually be overlapped in intersection Folded, the blue color blocking unit 113 is than the red color resistance unit 111, high 0.1-0.2 μm of green color blocking unit 112.
Specifically, in the step 1, the viscosity of the Other substrate materials is between 3.0-5.0cp, and solid content is in 15- Between 25wt%.
Specifically, the film thickness of the organic coating 20 formed in the step 1 is between 1.0-5.0 μm.
Specifically, in the step 1, the heating temperature range of electric hot plate heating is carried out at 90-120 DEG C to Other substrate materials Between, heating time between 80-150s, under the premise of not influencing Other substrate materials performance, preferentially chooses higher heating Temperature and longer heating time carry out electric hot plate heating to Other substrate materials.
Step 2, as shown in figure 4, provide a halftone mask 50, by the halftone mask 50 correspondence be placed in the substrate 10 tops, marked off on the substrate 10 respectively with several red, the greens, 111,112,113 phases of blue color blocking unit Corresponding red pixel area, green pixel area, blue pixel area and be located at the blue pixel area and red pixel area, green Pixel separation area between pixel region, the light shield 50 have the first transparent area corresponding with red, the green pixel area 51, and the second transparent area 52 corresponding with the blue pixel area;
The organic coating 20 is exposed using the halftone mask 50, corresponding the on the organic coating 20 One, the second transparent area 51,52 is respectively formed the first, second exposure region, wherein the light transmittance of second transparent area 52 is higher than the The light transmittance of one transparent area 51, so that the depth of exposure of the second exposure region is higher than the depth of exposure of the first exposure region.
Specifically, in the present embodiment, the halftone mask 50 provided in the step 2, first transparent area 51 with Second transparent area 52 is connected directly above the correspondence pixel separation area.
Specifically, the light transmittance of second transparent area 52 is 5%-20% higher than the light transmittance of the first transparent area 51, wherein The light transmittance of second transparent area 52 is 80-95%, and the light transmittance of first transparent area 51 is 60-90%.
Step 3 provides developer solution, is developed using the developer solution to the organic coating 20, due to the second exposure The depth of exposure in area is higher than the depth of exposure of the first exposure region, thus after the organic coating 20 is developed, the organic coating The height of second exposure region is higher than the height of first exposure region on 20.
Specifically, in the step 3, developer solution using 0.04wt% tetramethylammonium hydroxide (TMAH) solution, The TMAH solution of 2.38wt% or potassium hydroxide (KOH) solution of 0.04wt%, developing time is between 60-120s, in not shadow Under the premise of ringing Other substrate materials performance, preferably shorter developing time.
Step 4 carries out high-temperature baking, high-temperature baking time 20- to the organic coating 20 at a temperature of 220-240 DEG C 30min makes the sufficiently solidification of organic coating 20, forms organic insulation flatness layer.
Specifically, since in step 3, the height of second exposure region is higher than first exposure region on the organic coating 20 Height, therefore, the organic insulation flatness layer formed in the step 4 through high-temperature baking is corresponding to be located at the blue pixel area On height it is still higher than the corresponding red pixel area, the height in green pixel area of being located at.
Specifically, the corresponding height being located in the blue pixel area of the organic insulation flatness layer is than corresponding positioned at described Height in red pixel area, green pixel area is 0.1-0.2 μm high.
The production method of crystal liquid substrate of the invention remains to after forming organic insulation flatness layer on color filter film 11 The landform of color filter film 11 is maintained, so that organic insulation flatness layer is compared in the corresponding height being located in the blue pixel area Should be high positioned at the height in the red pixel area, green pixel area, so that made crystal liquid substrate is applied to liquid crystal display When device, parasitic capacitance can be reduced, promotion is filled in the display Mura for being effectively improved large scale, high parsing liquid crystal display device While electrical efficiency, the normal box thickness parameter of liquid crystal display device is maintained, display color difference and transmitance is effectively avoided to reduce problem, Guarantee the optical quality of liquid crystal display device.
However in the step 4 of above-mentioned first embodiment, organic coating 20 can generate levelling because of heat flow in high-temperature baking Effect, at this moment, the material on the organic coating 20 in second exposure region can be flowed into the first exposure region, so as to cause organic The flatness layer that insulate is corresponding in the red pixel area, green pixel area corresponding positioned at the blue pixel Qu Shangyu Difference in height reduces.Therefore, Fig. 6-7 is please referred to, the second embodiment of the present invention is compared with above-mentioned first embodiment, the step 2 The halftone mask 50 of middle offer also has and the pixel separation between first transparent area 51 and the second transparent area 52 The corresponding third transparent area 53 in area, wherein the light transmittance of the third transparent area 53 is higher than the light transmittance of the second transparent area 52, To in the step 2, further include correspond to the formation third exposure region of third transparent area 53 on the organic coating 20, described the The depth of exposure of three exposure regions is higher than the depth of exposure of the second exposure region;In the step 3, the organic coating 20 is developed Afterwards, on the organic coating 20 third exposure region height be higher than second exposure region height.
Specifically, the light transmittance of second transparent area 52 is 5%-20% higher than the light transmittance of the first transparent area 51;It is described The light transmittance of third transparent area 52 is 5%-20% higher than the light transmittance of second transparent area 51;Wherein, the third transparent area 52 light transmittance is 100%, and the light transmittance of second transparent area 52 is 80-95%, the light transmittance of first transparent area 51 For 60-90%.
In the second embodiment of the present invention, since the halftone mask 50 is saturating in first transparent area 51 and second Also there is third transparent area 53 corresponding with the pixel separation area between light area 52, it is therefore, described to have in the step 3 After organic coating 20 is developed, third exposure region outstanding also will form between the first, second exposure region thereon, thus in step In 4, it can prevent the material on the organic coating 20 in second exposure region from flowing into the first exposure region and cause organic exhausted Edge flatness layer is located in the blue pixel area and the corresponding height in the red pixel area, green pixel area corresponding The phenomenon that difference reduces.
In conclusion the production method of crystal liquid substrate of the invention, using halftone mask technology on color filter film Organic insulation flatness layer is formed, so that the corresponding height being located in the blue pixel area of organic insulation flatness layer is located at than correspondence Height in the red pixel area, green pixel area is high, so as to be effectively improved large scale, high parsing liquid crystal display dress The display Mura set reduces parasitic capacitance, while promoting charge efficiency, maintains the normal box thickness parameter of liquid crystal display device, It effectively avoids display color difference and transmitance from reducing problem, guarantees the optical quality of liquid crystal display device.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the appended right of the present invention It is required that protection scope.

Claims (9)

1. a kind of production method of crystal liquid substrate, which comprises the steps of:
Step 1 provides a substrate (10), and the substrate (10) is equipped with one layer of color filter film (11), the color filter film It (11) include several red color resistance units (111), green color blocking unit (112) and blue color blocking unit (113), in the coloured silk It is coated with a layer photoresist material on color filter coating (11), is formed organic coating (20);
Step 2 provides a halftone mask (50), and the halftone mask (50) are corresponded to and are placed in above the substrate (10), It is marked off on the substrate (10) corresponding with several red, greens, blue color blocking unit (111,112,113) respectively Red pixel area, green pixel area, blue pixel area and be located at the blue pixel area and red pixel area, green pixel Pixel separation area between area;The light shield (50) has the first transparent area corresponding with red, the green pixel area And the second transparent area (52) corresponding with the blue pixel area (51),;
The organic coating (20) is exposed using the halftone mask (50), it is corresponding on the organic coating (20) First, second transparent area (51,52) is respectively formed the first, second exposure region, wherein the light transmittance of second transparent area (52) Higher than the light transmittance of the first transparent area (51), so that the depth of exposure of the second exposure region is higher than the exposure journey of the first exposure region Degree;
Step 3 provides developer solution, is developed using the developer solution to the organic coating (20), due to the second exposure region Depth of exposure be higher than the depth of exposure of the first exposure region, thus after the organic coating (20) is developed, the organic coating (20) height of the second exposure region is higher than the height of first exposure region on;
Step 4 carries out high-temperature baking to the organic coating (20), solidifies the organic coating (20) sufficiently, is formed organic Insulate flatness layer;
The halftone mask (50) provided in the step 2, between first transparent area (51) and the second transparent area (52) Also there is third transparent area (53) corresponding with the pixel separation area, wherein the light transmittance of the third transparent area (53) Higher than the light transmittance of the second transparent area (52), to further include corresponding to third on the organic coating (20) in the step 2 Transparent area (53) forms third exposure region, and the depth of exposure of the third exposure region is higher than the depth of exposure of the second exposure region;Institute It states in step 3, after the organic coating (20) is developed, the height of third exposure region is higher than described on the organic coating (20) The height of second exposure region.
2. the production method of crystal liquid substrate as described in claim 1, which is characterized in that the halftoning provided in the step 2 Light shield (50), first transparent area (51) are connected directly above the corresponding pixel separation area with the second transparent area (52) It connects.
3. the production method of crystal liquid substrate as claimed in claim 2, which is characterized in that the light transmission of second transparent area (52) Rate is 5%-20% higher than the light transmittance of the first transparent area (51).
4. the production method of crystal liquid substrate as described in claim 1, which is characterized in that the light transmission of second transparent area (52) Rate is 5%-20% higher than the light transmittance of the first transparent area (51);The light transmittance of the third transparent area (52) is than second light transmission The high 5%-20% of light transmittance in area (51).
5. the production method of crystal liquid substrate as described in claim 1, which is characterized in that the substrate provided in the step 1 It (10) is tft array substrate, the substrate (10) includes underlay substrate and is set between underlay substrate and color filter film (11) Tft array layer.
6. the production method of crystal liquid substrate as described in claim 1, which is characterized in that in the step 1, the photoetching glue material The viscosity of material is between 3.0-5.0cp, and solid content is between 15-25wt%;
The step 1 further includes, after a layer photoresist material is coated on color filter film (11), on color filter film (11) Other substrate materials be successively dried in vacuo and electric hot plate heating, to form organic coating (20), the organic coating (20) film thickness is between 1.0-5.0 μm;
Wherein, to the heating temperature range of Other substrate materials progress electric hot plate heating between 90-120 DEG C, heating time is in 80- Between 150s.
7. the production method of crystal liquid substrate as described in claim 1, which is characterized in that in the step 3, developer solution is used The KOH solution of the TMAH solution of 0.04wt%, the TMAH solution of 2.38wt% or 0.04wt%, developing time 60-120s it Between.
8. the production method of crystal liquid substrate as described in claim 1, which is characterized in that in the step 4, at 220-240 DEG C At a temperature of to the organic coating (20) carry out high-temperature baking, high-temperature baking time 20-30min.
9. the production method of crystal liquid substrate as described in claim 1, which is characterized in that blue color blocking unit (113) ratio The red color resistance unit (111), green color blocking unit (112) are 0.1-0.2 μm high;
The organic insulation flatness layer formed in the step 4, the corresponding height being located in the blue pixel area are located at than correspondence Height in the red pixel area, green pixel area is 0.1-0.2 μm high.
CN201610891063.XA 2016-10-12 2016-10-12 The production method of crystal liquid substrate Active CN106324880B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610891063.XA CN106324880B (en) 2016-10-12 2016-10-12 The production method of crystal liquid substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610891063.XA CN106324880B (en) 2016-10-12 2016-10-12 The production method of crystal liquid substrate

Publications (2)

Publication Number Publication Date
CN106324880A CN106324880A (en) 2017-01-11
CN106324880B true CN106324880B (en) 2019-10-11

Family

ID=57821447

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610891063.XA Active CN106324880B (en) 2016-10-12 2016-10-12 The production method of crystal liquid substrate

Country Status (1)

Country Link
CN (1) CN106324880B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107589583B (en) * 2017-09-15 2021-08-06 惠科股份有限公司 Display panel and manufacturing method thereof
WO2019084751A1 (en) * 2017-10-31 2019-05-09 华为技术有限公司 Display assembly, manufacturing method therefor, display, and terminal device
CN107608123A (en) * 2017-11-03 2018-01-19 惠科股份有限公司 Display panel and its manufacture method
CN108832027A (en) * 2018-06-07 2018-11-16 广州市得胜光电科技有限公司 A kind of raising WOLED+COA manufacture of substrates
CN108646490B (en) * 2018-06-11 2021-01-26 Tcl华星光电技术有限公司 COA type array substrate and manufacturing method thereof
CN109143700B (en) * 2018-08-20 2020-12-04 武汉华星光电半导体显示技术有限公司 TFT array substrate and manufacturing method thereof
CN111781767A (en) * 2020-07-09 2020-10-16 深圳市华星光电半导体显示技术有限公司 Liquid crystal display panel and preparation method thereof
CN113156689B (en) * 2020-12-30 2022-08-23 厦门天马微电子有限公司 Array substrate, display panel and display device
CN113189812B (en) * 2021-04-29 2022-11-29 滁州惠科光电科技有限公司 Color filter layer manufacturing method, related substrate and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005272912A (en) * 2004-03-24 2005-10-06 ▲ぎょく▼徳科技股▲ふん▼有限公司 Method for producing stamper of light transmission plate by half tone technique
JP2006030650A (en) * 2004-07-16 2006-02-02 Koninkl Philips Electronics Nv Color filter, manufacturing method thereof, and liquid crystal display device using the color filter
CN100445836C (en) * 2007-02-08 2008-12-24 友达光电股份有限公司 Liquid crystal display panel and array base plate and method for manufacturing same
CN104965333B (en) * 2015-07-15 2018-05-01 深圳市华星光电技术有限公司 COA type liquid crystal display panels and preparation method thereof

Also Published As

Publication number Publication date
CN106324880A (en) 2017-01-11

Similar Documents

Publication Publication Date Title
CN106324880B (en) The production method of crystal liquid substrate
CN105974636B (en) The production method of liquid crystal display panel
CN104965333B (en) COA type liquid crystal display panels and preparation method thereof
CN102681246B (en) Color film substrate, method for manufacturing same and liquid crystal display
CN104749817B (en) A kind of display panel and display device
CN102799017B (en) Color membrane substrates, display panels and manufacture method thereof
CN108535909A (en) The production method and BPS type array substrates of BPS type array substrates
CN106842687B (en) Color membrane substrates and preparation method thereof
KR102202165B1 (en) Color film substrate, liquid crystal panel, liquid crystal display device, and manufacturing method thereof
CN103278963A (en) Color filtering array substrate, manufacturing method thereof and display device thereof
CN109116617A (en) Barrier wall structure, color membrane array substrate and liquid crystal display panel
CN103676297A (en) Colorful film substrate and liquid crystal display device
CN110221473A (en) Color membrane substrates and preparation method thereof and display device
US10197845B2 (en) Manufacturing method of color filter substrate and manufacturing method of liquid crystal panel
CN103901659B (en) Filter, liquid crystal indicator for IPS mode liquid crystal display panel
CN108363233A (en) Colored filter substrate and preparation method thereof
CN103246154A (en) Manufacturing method of mask plate for solidifying and shielding sealing frame glue
CN109270725A (en) Liquid crystal display panel and liquid crystal display device
CN109188764A (en) Liquid crystal display panel and preparation method thereof
CN105739166A (en) Liquid crystal display module and liquid crystal display device
CN107688254A (en) COA type liquid crystal display panels and preparation method thereof
US9513413B2 (en) Display device, color filter substrate and manufacturing method thereof
CN103149730A (en) Color film substrate and manufacturing method thereof, as well as liquid crystal display screen
CN106918950A (en) A kind of display base plate and display device
CN104932138A (en) Photomask and method for manufacturing colored film substrate

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province

Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd.

Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province

Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd.

CP01 Change in the name or title of a patent holder