CN108646490B - COA type array substrate and manufacturing method thereof - Google Patents
COA type array substrate and manufacturing method thereof Download PDFInfo
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- CN108646490B CN108646490B CN201810595334.6A CN201810595334A CN108646490B CN 108646490 B CN108646490 B CN 108646490B CN 201810595334 A CN201810595334 A CN 201810595334A CN 108646490 B CN108646490 B CN 108646490B
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- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000012528 membrane Substances 0.000 abstract description 15
- 230000035515 penetration Effects 0.000 abstract description 11
- 238000000265 homogenisation Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Filters (AREA)
- Liquid Crystal (AREA)
Abstract
The invention provides a COA type array substrate and a manufacturing method thereof. The manufacturing method of the COA type array substrate comprises the steps of forming a flat layer on a plurality of third color resistance units with the top surfaces being concave towards the bottom surfaces; this flat layer corresponds every third colour and hinders the top surface edge of unit and be equipped with the round bellying for the third colour hinders that the flat layer that the thick region of unit membrane thickness corresponds is thick equally, reduces the third colour and hinders the penetration rate in the thick region of unit membrane thickness, makes the third colour hinder the penetration rate in the thick region of unit membrane thickness unanimous with other regions, with balanced colourity, reaches the colourity homogenization, improves COA type array substrate's color performance.
Description
Technical Field
The invention relates to the technical field of display, in particular to a COA type array substrate and a manufacturing method thereof.
Background
Thin Film Transistors (TFTs) are the main driving elements in current Liquid Crystal Displays (LCDs) and Active Matrix Organic electroluminescent displays (AMOLEDs), and are directly related to the Display performance of flat panel displays.
Most of the existing liquid crystal displays in the market are backlight liquid crystal displays (lcds), which include a liquid crystal display panel and a backlight module (backlight module). The liquid crystal display panel operates on the principle that liquid crystal molecules are poured between a Thin Film Transistor (TFT) Substrate and a Color Filter (CF) Substrate, pixel voltage and common voltage are applied to the two substrates, and the rotation direction of the liquid crystal molecules is controlled by an electric field formed between the pixel voltage and the common voltage to refract light of a backlight module to generate a picture. The color filter comprises a plurality of color resistance units corresponding to a plurality of sub-pixels, and provides R (red), G (green) and B (blue) colors for the plurality of sub-pixels, at present, photoresist is generally adopted to manufacture the color resistance units, and because the photoresist has the problem of inconsistent leveling property, the shape of the color resistance units in actual manufacturing presents a concave bowl shape (bowl shape), and the concave amplitude exceeds 0.5um, so that the chromaticity difference between the center position and the edge position of the sub-pixels is overlarge, and the product color is not well represented.
The COA (Color-filter On Array) technology is an integrated technology for manufacturing a Color filter On an Array substrate, can effectively solve the problem of light leakage caused by alignment deviation in the process of aligning a liquid crystal display device to a box, and can remarkably improve the display aperture ratio. However, the problem of the concave bowl-shaped color resistance unit of the color filter is further aggravated because the topographic structure of the array substrate under the color filter is complex.
Disclosure of Invention
The invention aims to provide a manufacturing method of a COA type array substrate, which enables the penetration rate of a region with thicker film thickness of a third color resistance unit to be consistent with that of other regions so as to balance chromaticity, achieve chromaticity homogenization and improve the color expression of the COA type array substrate.
The present invention is also directed to a COA type array substrate, in which a region of a third color resistance unit having a thicker film thickness has a same transmittance as that of other regions to balance chromaticity, thereby achieving uniformity of chromaticity and improving color performance of the COA type array substrate.
In order to achieve the above object, the present invention provides a method for manufacturing a COA type array substrate, comprising the steps of:
step S1, providing a substrate, and forming a TFT layer on the substrate; forming a color photoresist layer on the TFT layer; the color photoresist layer comprises a plurality of adjacent first color resistance units, second color resistance units and third color resistance units, and the top surfaces of the plurality of third color resistance units are concave towards the bottom surface;
step S2, forming a flat layer on the color photoresist layer; the flat layer is provided with a circle of convex parts corresponding to the edge of the top surface of each third color resistance unit.
The ratio of the width of the convex part to the width of the third color resistance unit is 0.2-0.25; the thickness of the convex part of the flat layer is 0.3um-0.5um higher than the thickness of other positions of the flat layer.
The flat layer is exposed and developed once through a half-tone mask plate to obtain the convex part.
The flat layer is made of negative photoresist materials, the convex part of the half-tone mask plate corresponding to the flat layer is a full light-transmitting area, and the other area corresponding to the flat layer is a semi-light-transmitting area.
The flat layer is made of a positive photoresist material, the convex part of the halftone mask plate corresponding to the flat layer is an opaque area, and the other area corresponding to the flat layer is a semi-opaque area.
The present invention also provides a COA type array substrate, comprising: the TFT color filter comprises a substrate base plate, a TFT layer arranged on the substrate base plate, a color photoresist layer arranged on the TFT layer and a flat layer arranged on the color photoresist layer;
the color photoresist layer comprises a plurality of adjacent first color resistance units, second color resistance units and third color resistance units, and the top surfaces of the plurality of third color resistance units are concave towards the bottom surface; the flat layer is provided with a circle of convex parts corresponding to the edge of the top surface of each third color resistance unit.
The ratio of the width of the convex part to the width of the third color resistance unit is 0.2-0.25; the thickness of the convex part of the flat layer is 0.3um-0.5um higher than the thickness of other positions of the flat layer.
The flat layer is exposed and developed once through a half-tone mask plate to obtain the convex part.
The flat layer is made of negative photoresist materials, the convex part of the half-tone mask plate corresponding to the flat layer is a full light-transmitting area, and the other area corresponding to the flat layer is a semi-light-transmitting area.
The flat layer is made of a positive photoresist material, the convex part of the halftone mask plate corresponding to the flat layer is an opaque area, and the other area corresponding to the flat layer is a semi-opaque area.
The invention has the beneficial effects that: the manufacturing method of the COA type array substrate of the invention, through forming the flat layer on a plurality of third color resistance units that the top surface is sunken to the bottom surface; this flat layer corresponds every third colour and hinders the top surface edge of unit and be equipped with the round bellying for the third colour hinders that the flat layer that the thick region of unit membrane thickness corresponds is thick equally, reduces the third colour and hinders the penetration rate in the thick region of unit membrane thickness, makes the third colour hinder the penetration rate in the thick region of unit membrane thickness unanimous with other regions, with balanced colourity, reaches the colourity homogenization, improves COA type array substrate's color performance. According to the COA type array substrate, a flat layer is formed on a plurality of third color resistance units with the top surfaces being concave towards the bottom surface; this flat layer corresponds every third colour and hinders the top surface edge of unit and be equipped with the round bellying for the third colour hinders that the flat layer that the thick region of unit membrane thickness corresponds is thick equally, reduces the third colour and hinders the penetration rate in the thick region of unit membrane thickness, makes the third colour hinder the penetration rate in the thick region of unit membrane thickness unanimous with other regions, with balanced colourity, reaches the colourity homogenization, improves COA type array substrate's color performance.
Drawings
For a better understanding of the nature and technical aspects of the present invention, reference should be made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, which are provided for purposes of illustration and description and are not intended to limit the invention.
In the drawings, there is shown in the drawings,
FIG. 1 is a flow chart of a method for fabricating a COA type array substrate according to the present invention;
FIG. 2 is a schematic diagram of step S1 of the method for fabricating a COA type array substrate according to the present invention;
FIG. 3 is a schematic diagram of step S2 of the method for fabricating a COA type array substrate according to the present invention;
FIG. 4 is a schematic diagram of a preferred embodiment of a halftone mask blank for a manufacturing method of a COA type array substrate according to the present invention;
FIG. 5 is a schematic diagram of a halftone mask blank according to another preferred embodiment of the method for manufacturing a COA type array substrate of the present invention;
fig. 6 is a schematic diagram of step S3 of the method for manufacturing a COA type array substrate of the present invention and a schematic diagram of a COA type array substrate of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Referring to fig. 1, the method for manufacturing a COA type array substrate of the present invention includes the following steps:
step S1, please refer to fig. 2, providing a substrate 10, and forming a TFT layer 20 on the substrate 10; forming a color photoresist layer 30 on the TFT layer 20; the color photoresist layer 30 includes a plurality of adjacent first color resist units 31, second color resist units 32 and third color resist units 33, wherein top surfaces of the plurality of third color resist units 33 are recessed toward a bottom surface;
step S2, please refer to fig. 3, forming a planarization layer 40 on the color photoresist layer 30; the flat layer 40 is provided with a ring of protrusions 41 corresponding to the top edge of each third color-resisting unit 33.
It should be noted that, because the photoresist material in the color photoresist layer 30 has a problem of inconsistent leveling property, that is, when the color photoresist layer 30 is fabricated, the top surfaces of the multiple third color resist units 33 in actual fabrication are recessed toward the bottom surface, that is, the shape of the third color resist units 33 is concave bowl-shaped, in the present invention, a circle of protruding portion 41 is disposed on the edge of the top surface of the flat layer 40 formed on the color photoresist layer 30 corresponding to each third color resist unit 33, so that the film thickness of the flat layer 40 corresponding to the area where the film thickness of the third color resist unit 33 is thicker is also thicker, the transmittance of the area where the film thickness of the third color resist unit 33 is thicker is reduced, the transmittance of the area where the film thickness of the third color resist unit 33 is thicker is made to be consistent with the transmittance of other areas, thereby balancing the chromaticity, achieving the uniformity of chromaticity, and improving.
Specifically, in step S1, the color resist layer 30 is formed on the TFT layer 20 by a yellow light process or ink jet printing.
Specifically, the color photoresist layer 30 may be a negative photoresist material, and may also be a positive photoresist material.
Specifically, the first color resist unit 31 is one of a red photoresist, a green photoresist and a blue photoresist, the second color resist unit 32 is another one of the red photoresist, the green photoresist and the blue photoresist different from the first color resist unit 31, and the third color resist unit 33 is another one of the red photoresist, the green photoresist and the blue photoresist different from the first color resist unit 31 and the second color resist unit 32.
Preferably, the central regions of the top surfaces of the plurality of third color-resisting units 33 are recessed toward the bottom surface.
Specifically, the ratio of the width of the protrusion 41 to the width of the third color-resisting unit 33 is 0.2-0.25.
Specifically, the thickness of the convex portion 41 of the flat layer 40 is higher than the thickness of the other positions of the flat layer 40 by 0.3um to 0.5 um.
Specifically, the projection 41 is produced by exposing and developing the flat layer 40 once through a halftone mask plate 60.
Optionally, referring to fig. 4, the planarization layer 40 is a negative photoresist material, the raised portion 41 of the halftone mask 60 corresponding to the planarization layer 40 is a fully transparent region 61, and the other region corresponding to the planarization layer 40 is a semi-transparent region 62.
Optionally, referring to fig. 5, the planarization layer 40 is a positive photoresist material, the halftone mask 60 is an opaque region 63 corresponding to the protrusion 41 of the planarization layer 40, and the other region corresponding to the planarization layer 40 is a semi-opaque region 62.
Specifically, referring to fig. 6, the method for manufacturing the COA type array substrate further includes step S3, forming a pixel electrode layer 50 on the planarization layer 40.
Further, a patterned pixel electrode layer 50 is formed on the planarization layer 40 by a film formation process, a photolithography process, and an etching process.
Referring to fig. 6, based on the above-mentioned manufacturing method of the COA type array substrate, the present invention further provides a COA type array substrate, including: the color filter comprises a substrate 10, a TFT layer 20 arranged on the substrate 10, a color photoresist layer 30 arranged on the TFT layer 20 and a flat layer 40 arranged on the color photoresist layer 30;
the color photoresist layer 30 includes a plurality of adjacent first color resist units 31, second color resist units 32 and third color resist units 33, wherein top surfaces of the plurality of third color resist units 33 are recessed toward a bottom surface; the flat layer 40 is provided with a ring of protrusions 41 corresponding to the top edge of each third color-resisting unit 33.
It should be noted that, because the photoresist material in the color photoresist layer 30 has a problem of inconsistent leveling property, that is, when the color photoresist layer 30 is fabricated, the top surfaces of the multiple third color resist units 33 in actual fabrication are recessed toward the bottom surface, that is, the shape of the third color resist units 33 is concave bowl-shaped, in the present invention, a circle of protruding portion 41 is disposed on the edge of the top surface of the flat layer 40 formed on the color photoresist layer 30 corresponding to each third color resist unit 33, so that the film thickness of the flat layer 40 corresponding to the area where the film thickness of the third color resist unit 33 is thicker is also thicker, the transmittance of the area where the film thickness of the third color resist unit 33 is thicker is reduced, the transmittance of the area where the film thickness of the third color resist unit 33 is thicker is made to be consistent with the transmittance of other areas, thereby balancing the chromaticity, achieving the uniformity of chromaticity, and improving.
Specifically, the color resist layer 30 is formed on the TFT layer 20 by a yellow process or ink-jet printing.
Specifically, the color photoresist layer 30 may be a negative photoresist material, and may also be a positive photoresist material.
Specifically, the first color resist unit 31 is one of a red photoresist, a green photoresist and a blue photoresist, the second color resist unit 32 is another one of the red photoresist, the green photoresist and the blue photoresist different from the first color resist unit 31, and the third color resist unit 33 is another one of the red photoresist, the green photoresist and the blue photoresist different from the first color resist unit 31 and the second color resist unit 32.
Preferably, the central regions of the top surfaces of the plurality of third color-resisting units 33 are recessed toward the bottom surface.
Specifically, the ratio of the width of the protrusion 41 to the width of the third color-resisting unit 33 is 0.2-0.25.
Specifically, the thickness of the convex portion 41 of the flat layer 40 is higher than the thickness of the other positions of the flat layer 40 by 0.3um to 0.5 um.
Specifically, the projection 41 is produced by exposing and developing the flat layer 40 once through a halftone mask plate 60.
Optionally, referring to fig. 4, the planarization layer 40 is a negative photoresist material, the raised portion 41 of the halftone mask 60 corresponding to the planarization layer 40 is a fully transparent region 61, and the other region corresponding to the planarization layer 40 is a semi-transparent region 62.
Optionally, referring to fig. 5, the planarization layer 40 is a positive photoresist material, the halftone mask 60 is an opaque region 63 corresponding to the protrusion 41 of the planarization layer 40, and the other region corresponding to the planarization layer 40 is a semi-opaque region 62.
Specifically, referring to fig. 6, the COA type array substrate further includes a pixel electrode layer 50 disposed on the planarization layer 40.
Further, a patterned pixel electrode layer 50 is formed on the planarization layer 40 by a film formation process, a photolithography process, and an etching process.
Of course, the design of the color resist layer 30 and the planarization layer 40 of the present invention is not limited to the COA type array substrate, and the present invention is also applicable to the color filter substrate, and the present invention is not illustrated herein.
In summary, in the manufacturing method of the COA type array substrate of the present invention, the planarization layer is formed on the plurality of third color-resisting units with the top surface recessed toward the bottom surface; this flat layer corresponds every third colour and hinders the top surface edge of unit and be equipped with the round bellying for the third colour hinders that the flat layer that the thick region of unit membrane thickness corresponds is thick equally, reduces the third colour and hinders the penetration rate in the thick region of unit membrane thickness, makes the third colour hinder the penetration rate in the thick region of unit membrane thickness unanimous with other regions, with balanced colourity, reaches the colourity homogenization, improves COA type array substrate's color performance. According to the COA type array substrate, a flat layer is formed on a plurality of third color resistance units with the top surfaces being concave towards the bottom surface; this flat layer corresponds every third colour and hinders the top surface edge of unit and be equipped with the round bellying for the third colour hinders that the flat layer that the thick region of unit membrane thickness corresponds is thick equally, reduces the third colour and hinders the penetration rate in the thick region of unit membrane thickness, makes the third colour hinder the penetration rate in the thick region of unit membrane thickness unanimous with other regions, with balanced colourity, reaches the colourity homogenization, improves COA type array substrate's color performance.
As described above, it will be apparent to those skilled in the art that other various changes and modifications may be made based on the technical solution and concept of the present invention, and all such changes and modifications are intended to fall within the scope of the appended claims.
Claims (8)
1. A manufacturing method of a COA type array substrate is characterized by comprising the following steps:
step S1, providing a substrate (10), and forming a TFT layer (20) on the substrate (10); forming a color resist layer (30) on the TFT layer (20); the color photoresist layer (30) comprises a plurality of adjacent first color resistance units (31), second color resistance units (32) and third color resistance units (33), and the top surfaces of the third color resistance units (33) are sunken towards the bottom surface;
step S2, forming a flat layer (40) on the color photoresist layer (30); the flat layer (40) is provided with a circle of convex parts (41) corresponding to the top surface edge of each third color resistance unit (33);
the thickness of the convex part (41) of the flat layer (40) is 0.3-0.5 um higher than that of the other positions of the flat layer (40);
the ratio of the width of the protruding part (41) to the width of the third color resistance unit (33) is 0.2-0.25.
2. The method of manufacturing a COA type array substrate as set forth in claim 1 wherein the projections (41) are formed by exposing and developing the flat layer (40) once through a halftone mask (60).
3. The method of manufacturing a COA type array substrate as set forth in claim 2, wherein the planarization layer (40) is a negative photoresist material, the halftone mask (60) has a fully transmissive region (61) corresponding to the protrusion (41) of the planarization layer (40), and has a semi-transmissive region (62) corresponding to the other region of the planarization layer (40).
4. The method of claim 2, wherein the planarization layer (40) is a positive photoresist material, the halftone mask (60) is an opaque region (63) corresponding to the raised portion (41) of the planarization layer (40), and the other region corresponding to the planarization layer (40) is a semi-opaque region (62).
5. A COA type array substrate, comprising: the color filter comprises a substrate (10), a TFT layer (20) arranged on the substrate (10), a color photoresist layer (30) arranged on the TFT layer (20) and a flat layer (40) arranged on the color photoresist layer (30);
the color photoresist layer (30) comprises a plurality of adjacent first color resistance units (31), second color resistance units (32) and third color resistance units (33), and the top surfaces of the third color resistance units (33) are sunken towards the bottom surface; the flat layer (40) is provided with a circle of convex parts (41) corresponding to the top surface edge of each third color resistance unit (33);
the thickness of the convex part (41) of the flat layer (40) is 0.3-0.5 um higher than that of the other positions of the flat layer (40);
the ratio of the width of the protruding part (41) to the width of the third color resistance unit (33) is 0.2-0.25.
6. The COA type array substrate as set forth in claim 5, wherein the projections (41) are formed by exposing and developing the flat layer (40) once through a half-tone mask plate (60).
7. The COA type array substrate of claim 6 wherein the planarization layer (40) is a negative photoresist material, the halftone mask (60) has a fully transmissive region (61) corresponding to the raised portion (41) of the planarization layer (40), and has a semi-transmissive region (62) corresponding to the other region of the planarization layer (40).
8. The COA array substrate of claim 6 wherein the planarization layer (40) is a positive photoresist material, the halftone mask (60) is opaque (63) corresponding to the raised portion (41) of the planarization layer (40), and the other areas corresponding to the planarization layer (40) are semi-opaque (62).
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| CN110928007A (en) * | 2019-11-18 | 2020-03-27 | Tcl华星光电技术有限公司 | Substrate, liquid crystal display panel and substrate preparation method |
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| CN108646490A (en) | 2018-10-12 |
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