CN101013224A - Liquid crystal display panel and array base plate and method for manufacturing same - Google Patents
Liquid crystal display panel and array base plate and method for manufacturing same Download PDFInfo
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- CN101013224A CN101013224A CN 200710007591 CN200710007591A CN101013224A CN 101013224 A CN101013224 A CN 101013224A CN 200710007591 CN200710007591 CN 200710007591 CN 200710007591 A CN200710007591 A CN 200710007591A CN 101013224 A CN101013224 A CN 101013224A
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Abstract
An array substrate includes a base, a black matrix and a number of color resistances. The black matrix is formed on the base, comprising a number of blocks, and two ends of some blocks have different thickness. A number of color resistances are set up on the base, and each color resistance is formed between two adjacent blocks and respectively covering at least one end of above two adjacent blocks. Among them, the two ends of each block are respectively covered by different color resistances.
Description
Technical field
The present invention relates to a kind of array base palte, relate in particular to a kind of structure that has the look resistance and be applied to the array base palte of display panel.
Background technology
Along with the progress that shows science and technology, compare with traditional CRT monitor, Thin Film Transistor-LCD (thin film transistor liquid crystal display, TFT-LCD) owing to have the little and advantage that do not take up space of light, thin, low radiation and volume, become at present main force's product of monitor market, for complying with the fast development of liquid crystal display product, the inter-industry competition of liquid crystal panel manufacturer increases day by day.
Colored filter (color filter is in the LCD CF), one of most important spare part, and major function is to make LCD can produce colored picture.Please refer to Figure 1A, shown the vertical view of colored filter 1 among the figure, its main element has comprised a plurality of looks resistances 14 that the compartment of a black matrix" 11 and black matrix" 11 definition is interior.
Please refer to Figure 1B, Figure 1B is the cross section view of Figure 1A.The basic structure that has shown colored filter 1 among the figure.Colored filter 1 comprises a substrate 10, a black matrix" 11, a plurality of look resistance 14 and one conductive layer 16.
Black matrix" 11 is formed in the substrate 10, and is made up of a plurality of blocks 12.Look resistance 14 also is formed in the substrate 10, and is positioned between two adjacent blocks, has redness (R), green (G) and blue (B) three kinds of looks resistances 14.Wherein, the color of LCD presents, and is because white light backlight hinders at 14 o'clock by the look on the colored filter 1, can produce redness, green and blue three kinds of colors respectively, and by these three kinds of color combinations, and constitute various colors.And the function of black matrix" 11 is redness, green and blue three kinds of color looks resistance 14 are separated, and covers the part light of three kinds of colors, avoids light leak to influence colourity, and then improves contrast.
Yet because the demand difference of image chroma, a little adjustment must be done with the colourity of three kinds of colors by manufacturer.In general, the look in colored filter 1 hinders 14 thickness not simultaneously, and the colourity size that is presented also can be different thereupon, the look resistance 14 that thickness is healed high, and the colourity that it presented is higher.Therefore, manufacturer can make the look resistance 14 of different colours have different thickness height according to demand.For example: when desiring to make display frame blue partially, in the look resistance of colored filter made, the thickness height of blue look resistance 14 can hinder 14 height than red color resistance 14 and green look, and makes 14 of resistances of all kinds have the thickness offset.
Thickness difference in height between the look resistance of all kinds of above-mentioned colored filter 1, though can meet the demand of image chroma, can derive following point:
One, through after the look resistance technology, there is the formation of ox horn (Tusno) in the face regular meeting of look resistance, and causes the situation of face inequality.Therefore, after forming the look resistance, also can carry out a planarisation step, the face of the resistance of checking colors grinds (Polish), to remove ox horn, makes the planarization of look resistance face.
But, owing to have the thickness offset between the look resistance, cause when grinding (Polish), the ox horn of the higher look resistance of thickness height can only be removed, and the ox horn of the lower look resistance of thickness height can't be removed.So the thickness difference in height between look resistance of all kinds hinders the face problem of planarization fully with the look that causes colored filter.
Two, make after the look resistance, the upper surface of colored filter can form one deck conductive layer (ITO).Thus, when colored filter and thin-film transistor array base-plate the time, just have the function of energising to group.
But,, can produce the discontinuous situation of conductive layer owing to have the difference of thickness height between look of all kinds resistance.Shown in Figure 1B, because the thickness height of blue (B) look resistance 14 is higher, so in the process that plates conductive layer 16, have a side can't be plated to conductive layer 16.
Three, in cell technology, can on colored filter, be coated with (coating) one deck orientation rete (as: PI), then carry out the orientation action in the mode of polish-brush (rubbing), make that liquid crystal molecule can be towards the predetermined direction oblique arrangement.
But, owing to have the difference of thickness height between look of all kinds resistance, will make that the orientation on the orientation rete is discontinuous, and cause liquid crystal to tilt to rotate smoothly.
Therefore,, this is provided an actual effectively solution in view of institute's weak point still in the above-mentioned prior art, by current techniques essential.
Summary of the invention
A purpose of the present invention is to improve on the array base palte problem of thickness height inequality between resistance of all kinds so that the face of coloured resistance through after grinding (Polish) program, be able to comprehensive planarization.
Another object of the present invention is to improve the thickness offset between resistance of all kinds on the array base palte, the thickness height unanimity that makes resistance of all kinds is to avoid producing the discontinuous problem of conductive layer.
Another object of the present invention is to improve the thickness offset between resistance of all kinds on the array base palte, the thickness height unanimity that makes resistance of all kinds takes place to avoid the discontinuous problem of orientation rete orientation.
Another object of the present invention is to improve the thickness offset between resistance of all kinds on the array base palte, the thickness height unanimity that makes resistance of all kinds is to promote the technology yield of display panels.
The invention provides a kind of array base palte, the structure of this array base palte comprises a substrate, a black matrix" and the resistance of a plurality of look.Black matrix" is formed in the substrate, be made up of a plurality of blocks, and two ends of some blocks has different thickness.The resistance of a plurality of looks is arranged in the substrate, and each look resistance is formed between two adjacent blocks, and covers at least one end of above-mentioned two adjacent region pieces respectively.Wherein, the two ends of each block are covered by different look resistances respectively.
The invention provides a kind of display panels, comprise above-mentioned array base palte, a subtend substrate and a liquid crystal layer between this array base palte and this subtend substrate.
The invention provides a kind of manufacture method of array base palte, step is as described below: a substrate is provided.Form a black matrix" in upper surface of substrate, black matrix" is made up of a plurality of blocks, and wherein, two ends of some blocks has different thickness.Form a plurality of looks and hinder in substrate, the resistance of each look is formed between two adjacent blocks, and covers at least one end of above-mentioned two adjacent region pieces respectively, and wherein the two ends of each block are covered by different look resistances respectively.
About the advantages and spirit of the present invention, and more detailed embodiment can be further understood by following embodiment and accompanying drawing.
Description of drawings
By following detailed description in conjunction with the accompanying drawings, can understand the plurality of advantages of foregoing and the present invention easily, wherein:
Figure 1A is the vertical view of colored filter;
Figure 1B is the cross section view of colored filter;
Fig. 2 A to Fig. 2 E is the manufacture method synoptic diagram of array base palte of the present invention;
Fig. 3 is the first embodiment synoptic diagram of display panels of the present invention;
Fig. 4 is the second embodiment synoptic diagram of display panels of the present invention;
Fig. 5 A changes example for first of array base palte of the present invention;
Fig. 5 B changes example for second of array base palte of the present invention;
Fig. 5 C changes example for the 3rd of array base palte of the present invention;
Fig. 5 D changes example for the 4th of array base palte of the present invention;
Fig. 5 E changes example for the 5th of array base palte of the present invention;
Fig. 5 F changes example for the 6th of array base palte of the present invention; And
Fig. 5 G changes example for the 7th of array base palte of the present invention.
Wherein Reference numeral is:
1: colored filter 10: substrate
11: black matrix" 12: block
14: look resistance 16: conductive layer
20: the first substrate 22a: material layer
22: block 221: block for the first time
222: block 223 for the second time: block for the third time
24: 26: the first conductive layers of look resistance
27: the first orientation retes 29: adjust layer
Substrate in 30: the second 32: active device array
37: the second orientation retes of 36: the second conductive layers
Substrate in 40: the first 42: block
44: 46: the first conductive layers of look resistance
47: the first orientation retes 49: flatness layer
50: the substrate in 501: the second of subtend substrate
Embodiment
Please refer to Fig. 2 A to Fig. 2 E, it is the manufacture method synoptic diagram of array base palte of the present invention.Please refer to Fig. 2 A, one first substrate 20 at first be provided, and the coating or deposit a material layer 22a in first substrate, 20 tops.Wherein, select in the group that the material of this material layer 22a is made up of metals such as Cr, CrO, Ni or metallic compound, resin, dark-coloured organic material and pigment (Pigment), the purposes of material layer 22a is in order to cover the part light of different colours, avoid light leak to influence colourity, and then improve contrast.In preferred embodiment, above-mentioned resin and pigment (Pigment) are that black is preferable.
Then, material layer 22a patterning is formed a matrix in first substrate 20, in the present embodiment, matrix is with black matrix" expression for example, and this black matrix" is made up of a plurality of blocks, and manufacturing process please refer to Fig. 2 B.Shown in Fig. 2 B, be coated with a photoresist layer 62 in this material layer 22a upper surface, then utilize 64 couples of material layer 22a of a mask to carry out the photoetching etching program, to form a plurality of blocks 22.
Wherein, this mask 64 is half-tone mask (half-tone mask) or many gray-tone masks (multi-tonemask).Because above-mentioned two class masks have the photic zone of different transmittances, the two ends of some blocks that makes institute's etching come out has different thickness.
In a preferred embodiment, mask 64 has the first photic zone 64a, the second photic zone 64b and three kinds of photic zones of the 3rd photic zone 64c.Transmittance by little to being the first photic zone 64a, the second photic zone 64b and the 3rd photic zone 64c greatly in regular turn.The pairing material layer 22a of the first photic zone 64a is etched entirely behind the exposure imaging, the pairing material layer 22a of the second photic zone 64b is by partially-etched, the pairing material layer 22a of the 3rd photic zone 64c is also by partially-etched or not etching, if partially-etched, then etched degree is slighter.
Therefore, the block 22 of present embodiment has ladder (step) shape and two kinds of kenels of rectangular block shape, shown in Fig. 2 C.The second adjacent photic zone 64b and the 3rd photic zone 64c the two ends of block 22 of corresponding formation have different thickness, and be stepped.And all adjacent the 3rd photic zone 64c in two ends with the first photic zone 64a the block 22 of corresponding formation, then be the rectangular block shape block 22 of homogeneous thickness.
Please refer to Fig. 2 D, form after the black matrix", then form a plurality of look resistances 24 in first substrate 20, above-mentioned look resistance 24 comprises red color resistance (R) 24, green look resistance (G) 24 and 24 3 kinds of look resistances of blue look resistance (B), is formed in regular turn in first substrate 20.
Each look resistance 24 is formed at 22 of two adjacent blocks, and covers at least one end of above-mentioned two adjacent region pieces 22 respectively, and wherein the two ends of each block 22 are covered by different look resistances 24 respectively.
In embodiments of the present invention, had equal thickness by the two ends of the adjacent block 22 that is covered with resistance 24 of the same colour.Shown in Fig. 2 D, red color resistance (R) 24, green look resistance (G) 24 have the thickness that equates with the two ends that blue look hinders (B) 24 adjacent block that covered 22.
It should be noted that if under colourity is wanted blue partially situation, and the thickness height wants under the consistent demand, the two ends that blue look hinders (B) 24 adjacent block that covered 22 have lower thickness.Therefore, three expressions hinder 24 thickness height and not only equate, and blue look resistance (B) 24 that is formed at array base palte have the volume bigger than red color resistance (R) 24, green look resistance (G) 24, and also being this array base palte colourity that can present is indigo plant partially.
Certainly, also can want red partially or green partially other demand that waits, adjust the thickness size at the two ends of particular color look resistance 24 adjacent block that covered 22, hinder the equalization of 24 thickness height to keep three kinds of color looks according to colourity.
That is to say that according to the colourity demand, the look of different colours resistance 24 has different volumes.When the thickness height of coloured resistance 24 when equating, the two ends of look resistance 24 adjacent block that covered 22 that volume is healed big have the thickness height of healing low.
Therefore, the present invention utilizes half-tone mask (half-tone mask) or many gray-tone masks (multi-tone mask) to produce the different block of thickness height 22, therefore controls the thickness height of resistance 24 of all kinds.
In general, in the embodiment of the invention, the thickness of above-mentioned block 22 is 1 to 1.5 micron.Red color resistance (R) 24, green look resistance (G) 24 are 1 micron to 2.5 microns with the thickness of blue look resistance (B) 24.
Please continue the E with reference to Fig. 2, after a plurality of looks resistances 24 of formation are in first substrate 20, form one first conductive layer 26 in block 22 and look resistance 24, wherein above-mentioned first conductive layer 26 is exemplified as the ITO transparency conducting layer.Then, in cell technology, can be on first conductive layer 26 coating (coating) one deck orientation rete, PI rete for example, and carry out follow-up orientation and package program.
Array base palte of the present invention can be a kind of colored filter, can be applicable to the look resistance is formed on the subtend substrate of active elements array substrates, and the look resistance is formed at active device array top (color filter on array, COA) two kinds of display panels kenels.
Please refer to Fig. 3, Fig. 3 hinders the display panels synoptic diagram on the subtend substrate that is formed at active elements array substrates for look.This display panels comprise an active elements array substrates, array basal plate and be arranged at active elements array substrates and array base palte between liquid crystal layer 38.
Array base palte is arranged at the top of active elements array substrates, and the structure of array base palte is promptly identical with aforesaid structure, comprises one first substrate, 20, one black matrix"s and a plurality of look resistance 24.
Black matrix" is formed in first substrate 20, and black matrix" is made up of a plurality of blocks 22, and wherein the two ends of part block 22 have different thickness.A plurality of looks resistance 24 is arranged in first substrate 20, and each look resistance 24 is formed at 22 of two adjacent blocks, and covers an end of above-mentioned two adjacent region pieces 22 respectively, and wherein the two ends of each block 22 are covered by different look resistances 24 respectively.In addition, array base palte more comprises one first conductive layer 26 and one first orientation rete 27, is formed at black matrix" and look in regular turn and hinders 24 upper surfaces.
Active elements array substrates comprises one second substrate, 30, one active device arrays 32, is arranged in second substrate 30.One second conductive layer 36 and one second orientation rete 37 are formed on the active device array 32 in regular turn.Wherein, described active device array 32 is exemplified as thin film transistor (TFT) array.
Please refer to Fig. 4, Fig. 4 is formed at active device array top (color filter on array, display panels synoptic diagram COA) for the look resistance.This display panels is characterised in that, in array base palte, have an active device array be formed at substrate above, and be positioned at the below of look resistance and black matrix".
As shown in Figure 4, this display panels comprises array basal plate, a subtend substrate 50 and a liquid crystal layer 58.Wherein, subtend substrate 50 is provided with the array base palte subtend, and 58 of liquid crystal layers are arranged between array base palte and the subtend substrate 50.
Array base palte comprises one first substrate, 40, one active device arrays 48, a black matrix" and a plurality of look resistance 44.
In preferred embodiment, above-described first substrate 20,40 and second substrate 30,501 are all the transparent insulation substrate.First conductive layer 26,46 and second conductive layer 36,502 are all the ITO transparency conducting layer.The first orientation rete 27,47 and the second orientation rete 37,503 are all the PI rete.
In the above-described embodiments, be to utilize half-tone mask (half-tone mask) to form the different stepped block 22 of two ends thickness height, hinder 24 thickness with the control look.Yet, also can utilize other technological means to form the different block 22 of two ends thickness height.
Please refer to Fig. 5 A, can utilize the design of half-tone mask (half-tone mask) or many gray-tone masks (multi-tonemask), make an end of part block 22 have a hypotenuse (bevel edge).
Please refer to Fig. 5 B,, be coated with or deposit material layer earlier one time, and carry out the photoetching etching program by first kind of mask forming black matrix" in the process of first substrate, 20 upper surfaces, form one for the first time block 221 in first substrate, 20 upper surfaces.Then, be coated with material layer again one time, and carry out the photoetching etching program by second kind of mask, form one for the second time block 222 in block 221 the upper surface first time.
Wherein, above-mentioned second time, block 222 size was less than block 221 the size first time, thus the different block 22 of two ends thickness height also promptly by the first time block 221 formed with block 222 for the second time, in preferred embodiment, this block 22 also is stepped.The block 22 of two ends thickness height equalization then can be according to the photic zone design of above-mentioned two kinds of masks, optionally with the first time block 221 or block 222 formation for the second time.
In general, above-mentioned first time, block 221 thickness was 1 micron to 1.3 microns, and the thickness of block 22 is 1.1 microns to 1.5 microns.
Please refer to Fig. 5 C, in another embodiment, the different block 22 of two ends thickness height except the first time block 221 with block 222 for the second time, more can comprise a block 223 for the third time.Please be simultaneously with reference to Fig. 5 B, form for the second time after the block 222, be coated with material layer again one time, and carry out the photoetching etching program by the third mask, form block 223 for the third time in block 221 the upper surface first time.
Wherein, the size of above-mentioned block for the third time 223 is less than block 221 the size first time, so the different block 22 of two ends thickness height also promptly by the first time block 221, for the second time block 222 and for the third time block 223 formed, in preferred embodiment, this block 22 also is stepped.The block 22 of two ends thickness height equalization then can be according to the design of the photic zone of above-mentioned three kinds of masks, optionally with the first time block 221, for the second time block 222 or for the third time block 223 form.
The block 22 that two ends thickness height is different hinders 24 height except being used for reducing the higher look of thickness height, also can be used to increase lower look resistance 24 height of thickness height.Please refer to Fig. 5 D, in the present embodiment, red color resistance (R) 24 all is higher than blue look resistance (B) 24 (red color resistance (R) 24 is bigger with the volume of green look resistance (G) 24) with the thickness height of green look resistance (G) 24 originally.Therefore, for the thickness height that makes blue look resistance (B) 24 consistent with red color resistance (R) 24 and green look resistance (G) 24, so the two ends that make blue look hinder (B) 24 adjacent block that covered 22 have higher thickness, to improve the thickness height that blue look hinders (B) 24.
Among this embodiment, thickness height different block 22 in two ends is a kind of stepped block 22, can utilize half-tone mask (half-tone mask) to form.Perhaps, also can form for the first time block 221 in regular turn forms with block 222 for the second time.
Make the method for resistance thickness height unanimity of all kinds, except utilizing that the two ends different block of thickness height adjusts, also can arrange in pairs or groups and use one to adjust layer 29, this adjusts layer 29 and is formed between look resistance and the substrate, can be used to the thickness of bed hedgehopping look resistance 24.
Please refer to Fig. 5 E to Fig. 5 G, shown respectively and adjusted the position kenel of layer 29 in array base palte.
Please refer to Fig. 5 E, the look that adjustment layer 29 is formed at the thickness height need be increased hinders between 24 and first substrate 20, and is positioned at 22 of adjacent blocks.As shown in the figure, the thickness height of originally blue look resistance (B) 24 is greater than the thickness height of red color resistance (R) 24 and green look resistance (G) 24, but after red color resistance (R) 24 and green look resistance (G) 24 belows have increased adjustment layer 29, just can make the coloured resistance of institute highly impartial, and not influence colourity originally.
Please refer to Fig. 5 F, the look that adjustment layer 29 is formed at the thickness height need be increased hinders between 24 and first substrate 20, and its two ends touch adjacent block 22.As shown in the figure, the thickness height of originally blue look resistance (B) 24 is greater than the thickness height of red color resistance (R) 24 and green look resistance (G) 24, but after red color resistance (R) 24 and green look resistance (G) 24 belows have increased adjustment layer 29, just can make the coloured resistance of institute highly impartial, and not influence colourity originally.
Please refer to Fig. 5 G, adjust layer 29 and be formed between look resistance 24 and first substrate 20 that the thickness height need increase, and block 22 has at least part to cover to adjust layer 29, that is to say, part block 22 is positioned to be adjusted on layers 29.As shown in the figure, the thickness height of originally blue look resistance (B) 24 and green look resistance (G) 24 is greater than the thickness height of red color resistance (R) 24, but after block 22 belows that red color resistance (R) 24 is adjacent have increased adjustment layer 29, just can make the coloured resistance of institute highly impartial, and not influence colourity originally.
It should be noted that the material of adjusting layer 29 can be tin indium oxide, indium zinc oxide, TiO
2, GZO, ZaO or ZNO.In Fig. 5 E and Fig. 5 F two embodiment, it is also unrestricted with the priority formation order of block 22 to adjust layer 29; And in the embodiment of Fig. 5 F, because the block 22 of part is positioned at adjustment layer 29 top, so after must forming adjustment layer 29 earlier, just then form block 22.
In sum, technological means of the present invention can be adjusted the thickness height of resistance of all kinds on the array base palte effectively, so have following advantage:
One, improve on the array base palte problem of thickness height inequality between resistance of all kinds so that the face of coloured resistance through after grinding (Polish) program, be able to comprehensive planarization.
Two, improve the thickness offset between resistance of all kinds on the array base palte, the thickness height unanimity that makes resistance of all kinds is to avoid producing the discontinuous problem of conductive layer.
Three, improve the thickness offset between resistance of all kinds on the array base palte, the thickness height unanimity that makes resistance of all kinds takes place to avoid the discontinuous problem of orientation rete orientation.
Four, in improving the thickness offset between resistance of all kinds on the array base palte, the thickness height unanimity that makes resistance of all kinds is to promote the technology yield of display panels.
Though the present invention illustrates as above with preferred embodiments, so it is not only to terminate in the foregoing description in order to limit the present invention's spirit with the invention entity.For those of ordinary skills, when understanding and utilize other element or mode to produce identical effect easily.Be with, the modification of being done in not breaking away from spirit of the present invention and scope all should be included in following claims scope.
Claims (22)
1, a kind of array base palte comprises:
One substrate;
One matrix is formed in this substrate, and this matrix is made up of a plurality of blocks, and the two ends of this block of part have different thickness; And
The resistance of a plurality of looks is arranged in this substrate, and each this look resistance is formed between two adjacent these blocks, and covers at least one end of above-mentioned two adjacent these blocks respectively.
2, array base palte according to claim 1 is characterized in that, comprises that more an active device array is formed in this substrate.
3, array base palte according to claim 1 is characterized in that, two these ends that hindered adjacent this block that is covered by same this look have equal thickness.
4, array base palte according to claim 1 is characterized in that, above-mentioned at least this block of part is stepped or has hypotenuse.
5, array base palte according to claim 1 is characterized in that, the thickness of above-mentioned this block of part is 1 to 1.5 micron.
6, array base palte according to claim 1 is characterized in that, more comprises a conductive layer, is formed in this matrix and this a plurality of look resistances.
7, array base palte according to claim 1 is characterized in that, these a plurality of look resistances comprise a red color resistance, a green look resistance and a blue look resistance.
8, array base palte according to claim 7 is characterized in that, this red color resistance, the resistance of this green look and should the resistance of blueness look at least one thickness be 1 to 2.5 micron.
9, array base palte according to claim 1 is characterized in that, more comprises one and adjusts layer, between this look resistance and this substrate.
10, array base palte according to claim 9 is characterized in that, the material of this adjustment layer comprises tin indium oxide, indium zinc oxide, TiO
2, GZO, ZaO, ZNO or combinations thereof.
11, a kind of manufacture method of array base palte comprises:
One substrate is provided;
Form a matrix in this upper surface of substrate, this matrix is made up of a plurality of blocks, and wherein the two ends to this block of small part have different thickness; And
Form a plurality of looks and hinder in this substrate, each this look resistance is formed between two adjacent these blocks, and covers at least one end of above-mentioned two adjacent these blocks respectively.
12, the manufacture method of array base palte according to claim 11 is characterized in that, this matrix of above-mentioned formation comprises the following steps: in the step of this upper surface of substrate
Be coated with a material layer in this substrate;
Be coated with a photoresist layer in this material layer upper surface; And
Use a mask that this material layer is carried out the photoetching etching program, and form these a plurality of blocks.
13, the manufacture method of array base palte according to claim 12 is characterized in that, aforementioned mask is a shadow tone mask, makes the two ends of this block of part have different thickness.
14, the manufacture method of array base palte according to claim 12 is characterized in that, this above-mentioned mask is a gray-tone mask more than, makes the two ends of this block of part have different thickness.
15, the manufacture method of array base palte according to claim 11 is characterized in that, this matrix of above-mentioned formation comprises the following steps: in the step of this upper surface of substrate
Formation block one first time is in this upper surface of substrate; And
Form one for the second time block in this upper surface of block for the first time, wherein above-mentioned this block by this first time block and this second time block formed.
16, the manufacture method of array base palte according to claim 15 is characterized in that, this, thickness of block was 1 to 1.3 micron first time.
17, the manufacture method of array base palte according to claim 15 is characterized in that, the thickness of this block is 1.1 to 1.5 microns.
18, the manufacture method of array base palte according to claim 15 is characterized in that, above-mentioned this, size of block was a size less than this of block first time second time.
19, the manufacture method of array base palte according to claim 15, it is characterized in that, above-mentioned formation this for the second time after the step of block, more comprise form one for the third time block in the upper surface of this of block first time, wherein above-mentioned this block by this block, this first time second time block and this for the third time block formed.
20, the manufacture method of array base palte according to claim 11 is characterized in that, selects in the group that the material of this matrix is made up of Cr, CrO, Ni, dark-coloured organic material, resin and pigment.
21, the manufacture method of array base palte according to claim 11 is characterized in that, a plurality of looks of above-mentioned formation hinder after this suprabasil step, more comprises forming a conductive layer in this matrix and this a plurality of look resistances.
22, the manufacture method of array base palte according to claim 21 is characterized in that, after the step of above-mentioned this conductive layer of formation, more comprises forming an orientation rete on this conductive layer.
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| CNB2007100075915A CN100445836C (en) | 2007-02-08 | 2007-02-08 | Liquid crystal display panel and array base plate and method for manufacturing same |
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| CNB2007100075915A CN100445836C (en) | 2007-02-08 | 2007-02-08 | Liquid crystal display panel and array base plate and method for manufacturing same |
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