CN106773246A - A kind of preparation method of COA substrates - Google Patents
A kind of preparation method of COA substrates Download PDFInfo
- Publication number
- CN106773246A CN106773246A CN201611216356.4A CN201611216356A CN106773246A CN 106773246 A CN106773246 A CN 106773246A CN 201611216356 A CN201611216356 A CN 201611216356A CN 106773246 A CN106773246 A CN 106773246A
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- Prior art keywords
- layer
- preparation
- light resistance
- coa substrates
- color light
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Filters (AREA)
Abstract
The invention provides a kind of preparation method of COA substrates, comprise the following steps：Comprise the following steps：1) underlay substrate is provided, and metal level is provided on the substrate；2) the first protective layer is set on the metal level；3) color light resistance layer is set on first protective layer；4) PFA is set in the color light resistance layer and prepares protective layer, wherein the PFA protective layers are made up of white photoresistance, flat protection layer and support column；5) metal ITO conductive layer is set.The present invention is coated while having general photoresist by color light resistance layer; white photoresistance, flat protection layer and support column are formed by way of single exposure develops; then ITO conductive layer is prepared again; with reference to white photoresistance, flat protection layer and the road gold-tinted processing procedure of support column three together with; save twice gold-tinted making technology; technical process is simple, and the production capacity of production is improve to greatest extent.
Description
Technical field
The invention belongs to LCD Technology field, and in particular to a kind of preparation method of COA substrates.
Background technology
Liquid crystal display panel includes array base palte, color membrane substrates and the liquid crystal being clipped between array base palte and color membrane substrates
Layer, it is to produce electric field driven liquid crystal molecule using circuit, produces different light reactions by physics of liquid crystals characteristic, then correspond to
The trichromatic changes of RGB on color membrane substrates, realize full-color display image.
COA (array enamel optical filter, color filter on array) technology is to prepare in battle array colored filter
A kind of technology of row substrate-side, its maximum benefit is can to reduce parasitic capacitance to improve product aperture opening ratio.With information technology
Development, the good liquid crystal display panel of high transmittance, low energy consumption, image quality be improve product competitiveness main influence because
Element, in order to improve picture overall brightness reducing energy consumption, be added to a kind of white (W) sub-pixel by red (R), green (G), indigo plant by industry
(B) three colour cells into traditional rgb pixel in, then reapply corresponding sub-pixel imaging technique, the side of image is seen with the mankind
Formula is preferably arranged those sub-pixels, the overall brightness of picture is improved by white sub-pixels, so as to realize gray scale high
And low power consumption.I.e. in COA substrates, one is constituted by red sub-pixel, green sub-pixels, blue subpixels and white sub-pixels
Pixel.Specifically, by parsing the data of input pixel, carry out appropriate signal transacting to drive liquid crystal panel and backlight,
These characteristics are realized on the premise of to reach guarantee image quality, can relatively realize that power consumption reduces 40% compared with traditional mode.
COA substrates have various preparation methods, and at present, relatively more traditional preparation technology is comprised the following steps：1st, on substrate
Make metal level；The 2nd, first protective layer is set on the metal layer；3rd, by four coatings, exposure, development on the first protective layer
Mode form red (R), green (G), blue (B), white (W) color light resistance layer；The 4th, second protective layer is set in color light resistance layer；5、
Metal conducting layer is set；The 6th, support column is set.In traditional preparation technology, the preparation of color light resistance layer is by 4 exposures
The mode of development is formed by several times, is then made the second protective layer and support column, and the preparation process of the second protective layer is complicated, including
CVD evaporations, via exposure, via etch, photoresist removal, and needed in the preparation process of color light resistance layer by four paintings
Cloth exposure imaging, process is complicated.
The content of the invention
In order to solve problem of the prior art, the invention provides a kind of new preparation technology, set using different light shields
Meter, and corresponding photoresist of arranging in pairs or groups, white photoresistance, flat protection layer and support are formed by the way of single exposure development
Post.Production process is simple, enormously simplify production technology, largely saves cost.
In order to achieve the above object, the present invention is adopted the following technical scheme that：
A kind of preparation method of COA substrates, comprises the following steps：
1) underlay substrate is provided, and metal level is provided on the underlay substrate；
2. the first protective layer) is set on the metal level；
3) color light resistance layer is set on first protective layer；
4) PFA (polymer film on array, array base palte side polymeric membrane) is set in the color light resistance layer
Protective layer, PFA protective layers are made up of white photoresistance, flat protection layer and support column；
5) metal ITO (tin indium oxide) conductive layer is set.
According to the present invention, the PFA protective layers are with white photoresistance (W PIXEL), flat protection layer and PS (post
Spacer) Multifunctional layered of support column characteristic is other.
Further, the metal level includes the first metal layer and second metal layer, preferably by the first metal layer and second
Metal level is constituted.
Further, the step 3) in, the color light resistance layer is formed by three coatings, exposure, visualization way.It is excellent
Selection of land, the color light resistance layer is made up of red photoresistance, green photoresistance and blue light resistance.
Further, the step 4) in, in step 3) color light resistance layer on coat with white photoresistance, flat protection
The general photoresist of layer and support column characteristic, is then exposed and develops, so as to form the PFA protective layers.
Further, the exposed and developed number of times is 1 time.
Further, the general photoresist is transparent material.Preferably, the general photoresist is selected from eurymeric light
Resistance material or minus photoresist.
Further, the step 4) middle use slit is coated with or rotary coating mode is applied in the color light resistance layer
The upper general photoresist.
Further, the thickness of the PFA protective layers is 2 μm -6 μm.
Further, the mask plate used by the exposure has at least two penetrances, is easy to form the branch that thickness is not waited
Dagger.
Further, the mask plate used by the exposure is selected from gray-level mask, halftone mask or its combination.
Further, the support column includes main support column and auxiliary support column.
Further, the metal ITO conductive layer includes the 3rd metal level and ITO conductive layer.
Beneficial effects of the present invention：
The present invention is coated with white photoresistance, flat protection layer by red (R), green (G), blue (B) color light resistance layer
With the general photoresist of support column characteristic, white photoresistance, flat protection layer are directly formed by way of single exposure develops
And support column, the 3rd metal level and ITO conductive layer are then prepared again, the method that the present invention is provided combines white photoresistance, flat guarantor
Sheath together with, saves twice gold-tinted making technology with the road gold-tinted processing procedure of support column three, and production is improve to greatest extent
Production capacity.
The present invention instead of the preparation process of the second traditional protective layer, the second traditional protective layer system using PFA techniques
Standby process is complicated, including CVD (Chemical Vapor Deposition, chemical vapor deposition) evaporations, via exposure, via
Etching and photoresist removal step, and PFA techniques are typically only comprising via exposure, bleaching (being used for eurymeric photoresist), baking
With via etch step, preparation process is simple of the technical process compared to the second traditional protective layer.
Brief description of the drawings
Fig. 1 is white photoresistance of the invention, flat protection layer and support column arrangement schematic diagram.
Wherein, 1 support column, 2 flat protection layers, 3 white photoresistances.
Specific embodiment
The present invention is described in detail with reference to embodiments, but the present invention is not limited by following embodiments.
Embodiment 1
COA substrates of the invention, including underlay substrate, the first metal layer, second metal layer, the first protective layer, R/G/B colors
Resistance layer, white photoresistance/flat protection layer/support column, the 3rd metal level and ITO conductive layer.
Underlay substrate, the underlay substrate includes but is not limited to glass, metal, organic or quartz base plate, first metal
Layer is located on underlay substrate, image conversion treatment is carried out to the first metal layer and forms grid, the first metal beyond gate region portions
Layer is etched away in manufacturing process, then makes second metal layer, in order to isolate the first metal layer and second metal layer, the
Silicon nitride layer is set between one metal level and second metal layer.
First protective layer is set on described second metal layer, and the first protective layer is by second metal layer and red green blue
Color photoresist layer is isolated.On the first protective layer, red, green, blue colour is formed respectively by way of 3 coatings, exposure, development
Photoresistance, is coated while having white light in red, green, blue color light resistance layer by rotary coating or slit coating method afterwards
Resistance, flat protection layer and support column characteristic by photoresist, the photoresist is transparent minus photoresist, this material
Penetrance be more than 95% in visible-range, the thickness of the photoresist of coating is 2 μm, is then exposed, and exposes institute
By the way of gray-level mask, halftone mask collocation, penetrance highest position obtains the most thick main branch of thickness to mask plate
Dagger, the smaller part of the relatively low light exposure of penetrance, auxiliary support column, flat protection layer and white are formed separately according to sequence
Photoresist layer.White photoresist layer, flat protection layer and support column are developed by single exposure form in the present embodiment is once
Shaping, saves twice gold-tinted processing procedure, and technique greatly reduces.Form white photoresist layer, flat protection layer and system after support column
Make the 3rd metal level and ITO conductive layer.
Embodiment 2
COA substrates of the invention, including underlay substrate, the first metal layer, second metal layer, the first protective layer, red green/
Blue resistance layer, white photoresistance/flat protection layer/support column, the 3rd metal level and ITO conductive layer.
Underlay substrate, the underlay substrate includes but is not limited to glass, metal, organic or quartz base plate, first metal
Layer is located on underlay substrate, image conversion treatment is carried out to the first metal layer and forms grid, the first metal beyond gate region portions
Layer is etched away in manufacturing process, then makes second metal layer, in order to isolate the first metal layer and second metal layer, the
Silicon nitride layer is set between one metal level and second metal layer.
First protective layer is set on described second metal layer, and the first protective layer is by second metal layer and red green blue
Color photoresist layer is isolated.On the first protective layer, red, green, blue colour is formed respectively by way of 3 coatings, exposure, development
Photoresistance, is coated while having white light in red, green, blue color light resistance layer by rotary coating or slit coating method afterwards
Resistance, flat protection layer and support column characteristic by photoresist, the photoresist is transparent eurymeric photoresist, this material
Penetrance be more than 95% in visible-range, the thickness of the photoresist of coating is 6 μm, is then exposed, and exposes institute
Mask plate, according to the height of penetrance, is molded main support respectively by the way of gray-level mask, halftone mask collocation
Post, auxiliary support column, flat protection layer and white photoresist layer.In the present embodiment by white photoresist layer, flat protection layer and support
The form one-shot forming that post is developed by single exposure, saves twice gold-tinted processing procedure, and technique greatly reduces.Form white photoresistance
The 3rd metal level and ITO conductive layer are made after layer, flat protection layer and support column.
Although invention has been described hereinbefore to have been made with reference to embodiment, but is not departing from the scope of the invention
In the case of, various improvement can be carried out to it, the invention is not limited in specific embodiment disclosed herein, but fall into power
All technical schemes of the scope that profit is required.
Claims (10)
1. a kind of preparation method of COA substrates, comprises the following steps：
1) underlay substrate is provided, and metal level is provided on the underlay substrate；
2) the first protective layer is set on the metal level；
3) color light resistance layer is set on first protective layer；
4) PFA protective layers are set in the color light resistance layer, wherein the PFA protective layers are by white photoresistance, flat protection layer
Constituted with support column；
5) metal ITO conductive layer is set.
2. the preparation method of COA substrates according to claim 1, it is characterised in that the metal level is by the first metal layer
Constituted with second metal layer.
3. the preparation method of COA substrates according to claim 1 and 2, it is characterised in that in step 3) in, the colour
Photoresist layer is formed by three coatings, exposed and developed modes, and the color light resistance layer is by red photoresistance, green light
Resistance and blue light resistance composition.
4. the preparation method of COA substrates according to claim 1 and 2, it is characterised in that the step 4) in, by
Step 3) the general photoresistance material with white photoresistance, flat protection layer and support column characteristic is coated in the color light resistance layer that obtains
Material, is then exposed and develops, so as to form the PFA protective layers.
5. the preparation method of COA substrates according to claim 4, it is characterised in that step 4) in, it is described exposed and developed
Number of times for once.
6. the preparation method of COA substrates according to claim 4, it is characterised in that step 4) in, the general photoresistance material
Expect to be transparent material, selected from eurymeric photoresist or minus photoresist.
7. the preparation method of COA substrates according to claim 4, it is characterised in that step 4) in, it is coated with using slit
Or the color light resistance layer is coated the general photoresist by rotary coating mode.
8. the preparation method of COA substrates according to claim 4, it is characterised in that step 4) in, exposure mask used
Plate has at least two penetrances.
9. the preparation method of COA substrates according to claim 4, it is characterised in that step 4) in, exposure mask used
Plate is selected from gray-level mask, halftone mask or its combination.
10. the preparation method of COA substrates according to claim 1 and 2, it is characterised in that the thickness of the PFA protective layers
It is 2 μm -6 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611216356.4A CN106773246A (en) | 2016-12-26 | 2016-12-26 | A kind of preparation method of COA substrates |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611216356.4A CN106773246A (en) | 2016-12-26 | 2016-12-26 | A kind of preparation method of COA substrates |
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| CN107121858A (en) * | 2017-06-05 | 2017-09-01 | 深圳市华星光电技术有限公司 | Array base palte, liquid crystal display panel and liquid crystal display device |
| CN110456546A (en) * | 2019-07-31 | 2019-11-15 | 深圳市华星光电技术有限公司 | Display panel and preparation method thereof |
| WO2020073386A1 (en) * | 2018-10-08 | 2020-04-16 | 惠科股份有限公司 | Display panel and manufacturing method |
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Application publication date: 20170531 |