CN101943815A - Liquid crystal display device and manufacturing method of electrode substrate thereof - Google Patents
Liquid crystal display device and manufacturing method of electrode substrate thereof Download PDFInfo
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Abstract
The invention relates to a liquid crystal display device which comprises a first substrate, a second substrate and a liquid crystal layer configured between the first substrate and the second substrate. The first substrate comprises a glass substrate and a first transparent electrode layer, a first transparent insulating layer, a second transparent insulating layer and a second transparent electrode layer which are configured on the glass substrate layer by layer. The second transparent insulating layer comprises a plurality of first convex blocks and a plurality of second convex blocks. One first convex block and one second convex block are arranged in each pixel region. The second transparent electrode layer comprises a plurality of electrode patterns which respectively cover the first convex blocks and a plurality of second electrode patterns which respectively cover the second convex blocks. A strong electric field is generated between the first transparent electrode layer and the first electrode patterns and the second electrode patterns, and an auxiliary horizontal electric field is simultaneously generated between the first electrode patterns and the second electrode patterns, thereby reducing the operation voltage. In addition, the invention further provides a manufacturing method of an electrode substrate so as to reduce the distance between the first transparent electrode layer and the second transparent electrode layer and further reduce the operation voltage.
Description
Technical field
The present invention relates to a kind of display device, and particularly relevant for the manufacture method of a kind of liquid crystal indicator and electrode base board thereof.
Background technology
Liquid crystal indicator (liquid crystal display is called for short LCD) is recent most widely used flat display apparatus.Liquid crystal indicator mainly adopts spacing color mixed and two kinds of colour mixture modes of time colour mixture are carried out the full color demonstration, and wherein the time colour mixture is also referred to as the colored demonstration of field sequence (field sequential color is called for short FSC).Spacing color mixed needs utilize colored filter (color filter) to define red, green and blue three sub-pixels, so display effect can be subjected to the influence of colored filter sub-pixel aperture opening ratio and penetrance.If adopt time colour mixture technology, just can not adopt colored filter, can promote the penetrance of display panel like this, and more energy-conservation and environmental protection.
Time colour mixture Technology Need is brought up to sweep frequency more than the 180Hz, the reaction time of such frame (frame) need be less than 5.5 milliseconds, but general twisted-nematic (twisted nematic, abbreviation TN) reaction time of the liquid crystal of type or vertical orientated (vertical alignment is called for short VA) type is all more than 8 milliseconds.Long meeting of reaction time descends the brightness of display panel, and the reaction time of adding between the different GTGs is not quite similar, and has the problem of color blending error.
Blue phase (blue phase) liquid crystal is a kind of liquid crystal of high speed reaction, and the reaction time is all in (about hundreds of microsecond) below 1 millisecond.If blue phase liquid crystal technology and time colour mixture technology are just combined and can address the above problem.But if blue phase liquid crystal is clipped in the polaroid of two vertical polarizations, needing to give with very big voltage difference (about 100 volts) just to have enough retardances (retardance) that light can be passed through.Therefore, the operating voltage that how reduces the blue phase liquid crystal device under the prerequisite that does not influence liquid crystal display color representation and penetrance is an important topic.
Blue phase liquid crystal is isotropy (isotropic), but can change along the direction of an electric field light refractive index after adding electric field, can adopt transverse electric field effect (in-plane switching is called for short IPS) electrode structure to produce horizontal component of electric field.See also Fig. 1, pixel electrode (the pixel electrod) 102 and the common electrode (common electrod) 104 of the transverse electric field effect electrode structure 100 that tradition is monolateral all are positioned on the infrabasal plate 106, and be interlaced in the mode of comb electrode.
Figure 2 shows that when the clearance distance (cellgap) between upper substrate among the IPS-LCD 108 and the infrabasal plate 106 is 6 microns collocation Kerr constanr (Kerr constant) is about the blue phase liquid crystal of 4.77x10-10mV-2, the graph of a relation of penetrance and operating voltage.Wherein, curve L1 represents is pixel electrode 102 and the width of common electrode 104 is respectively 10 microns, relation curve when distance is 10 microns.Curve L2 represents is pixel electrode 102 and the width of common electrode 104 is respectively 4 microns, relation curve when distance is 10 microns.Curve L3 represents is pixel electrode 102 and the width of common electrode 104 is respectively 4 microns, relation curve when distance is 6 microns.Curve L4 represents is pixel electrode 102 and the width of common electrode 104 is respectively 4 microns, relation curve when distance is 4 microns.
As seen from Figure 2, the horizontal component of electric field that the IPS electrode structure is produced is too little, and operating voltage will reach 130 volts just can reach the maximum penetration rate, but 130 volts operating voltage is too big, does not meet practical application request.
Can produce stronger horizontal component of electric field if change fringe field effect (fringe field switching is called for short FFS) electrode into.See also Fig. 3, the distance of the pixel electrode 202 of FFS electrode structure 200 and common electrode 204 shortens.D represents the clearance distance between upper substrate 206 and the insulation course 208 among Fig. 3, the distance between z remarked pixel electrode 202 and the upper substrate 206.
When Fig. 4 gets different numerical value for z/d, the energy profile of the horizontal component of electric field of FFS electrode structure 200.When Fig. 5 was 6 microns for the d of FFS-LCD, collocation Kerr constanr (kerr constant) was about the blue phase liquid crystal of 4.77x10-10mV-2, the graph of a relation of penetrance and operating voltage.Wherein, curve L5 represents is that the width of each pixel electrode 202 is that 4 microns, height are 1.5 microns, the relation curve when spacing is 4 microns.Curve L6 represents is that the width of each pixel electrode 202 is that 4 microns, height are 0.1 micron, the relation curve when spacing is 4 microns.By Fig. 4, Fig. 5 as can be seen, the FFS electrode can produce stronger horizontal component of electric field, but electric field too concentrates on the both sides of electrode, causes the maximum penetration rate of blue phase liquid crystal on the low side.
Summary of the invention
The object of the present invention is to provide a kind of liquid crystal indicator, its electrode structure can provide bigger and equally distributed horizontal component of electric field, helps reducing the operating voltage of liquid crystal indicator.
The present invention provides a kind of method of making electrode base board in addition, can be reduced the operating voltage of liquid crystal indicator by the produced electrode of method.
The object of the invention to solve the technical problems is to adopt following technical scheme to realize.
The present invention proposes a kind of liquid crystal indicator, and it comprises one first substrate, one second substrate relative with first substrate, and a liquid crystal layer.First substrate comprises a glass substrate, one first transparent electrode layer, one first transparent insulating layer, one second transparent insulating layer, and one second transparent electrode layer.Glass substrate has a plurality of pixel regions.First transparent electrode layer is disposed on the glass substrate.First transparent insulating layer is disposed on first transparent electrode layer.Second transparent insulating layer is disposed on first transparent insulating layer.Wherein, second transparent insulating layer comprises a plurality of first projections and a plurality of second projection, and be provided with in each pixel region those first projections one of them and those second projections one of them.Second transparent electrode layer comprises a plurality of first electrode patterns that cover those first projections respectively and a plurality of second electrode patterns that cover those second projections respectively.Liquid crystal layer is disposed between second transparent electrode layer and second substrate of first substrate.
In one of the present invention embodiment, above-mentioned first projection and above-mentioned second projection have contact one first of first transparent insulating layer, relative with first one second and be connected in the 3rd of 1 between first and second respectively, and press from both sides an acute angle between the 3rd and first.
In one of the present invention embodiment, the area of above-mentioned first transparent insulating layer in each pixel region is A1, first area of each first projection and each second projection is respectively A2, second area of each first projection and each second projection is respectively A3, and 0＜A2＜A1,0.1xA2＜A3＜A2.
In one of the present invention embodiment, above-mentioned acute angle is 45 degree.
In one of the present invention embodiment, the distance between above-mentioned first and above-mentioned second is 1.5 microns.
In one of the present invention embodiment, the thickness of above-mentioned first transparent insulating layer is 0.2 micron, the width of each first electrode pattern and each second electrode pattern is respectively 4 microns, and first electrode pattern and the distance between second electrode pattern in each pixel are 4 microns.
In one of the present invention embodiment, above-mentioned second substrate is a glass substrate, and above-mentioned liquid crystal layer is a blue phase liquid crystal layer.
In one of the present invention embodiment, be provided with a membrane transistor in above-mentioned each pixel region.
For reaching above-mentioned advantage, the present invention proposes a kind of manufacture method of electrode base board in addition, it is characterized in that may further comprise the steps: provide a glass substrate, and glass substrate has a plurality of pixel regions; On glass substrate, form one first transparent electrode layer; On first transparency electrode, form one first transparent insulating layer; Form one second transparent insulating layer on first transparent insulating layer, second transparent insulating layer comprises a plurality of first projections and a plurality of second projection, and be provided with in each pixel region those first projections one of them and those second projections one of them; And on second transparent insulating layer, forming one second transparent electrode layer, second transparent electrode layer comprises a plurality of first electrode patterns that cover those first projections respectively and a plurality of second electrode patterns that cover those second projections respectively.
In one of the present invention embodiment, before forming above-mentioned first transparent electrode layer, further may further comprise the steps: on above-mentioned glass substrate, form a first metal layer; Form one the 3rd insulation course that covers the first metal layer; On the 3rd insulation course, form semi-conductor layer; On semiconductor layer, form one second metal level; And form one the 4th insulation course that covers second metal level, and first transparent electrode layer is to be formed on the 4th insulation course.
The present invention utilizes first projection and second projection difference bed hedgehopping first electrode pattern and second electrode pattern of first substrate, make between first transparent electrode layer and first electrode pattern and second electrode pattern and produce highfield, make simultaneously and produce auxiliary horizontal component of electric field between first electrode pattern and second electrode pattern, thereby it is too little to improve the horizontal component of electric field that traditional monolateral transverse electric field effect electrode produced, and the problem too concentrated of traditional fringe field effect Electrode Field.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is a Traditional IP S electrode structure synoptic diagram.
Fig. 2 is the penetrance of Traditional IP S-LCD under different condition and the graph of a relation of operating voltage.
Fig. 3 is a traditional F FS electrode structure synoptic diagram.
Fig. 4 is traditional F FS electrode electric field energy distribution plan under different condition.
Fig. 5 is the penetrance of traditional F FS-LCD under different condition and the graph of a relation of operating voltage.
Fig. 6 is the part-structure synoptic diagram of liquid crystal indicator of the present invention.
Fig. 7 is the electric field energy distribution plan under the condition of first embodiment of the invention.
Fig. 8 is the penetrance under the condition of first embodiment of the invention and the graph of a relation of operating voltage.
Fig. 9 is the penetrance under the condition of second embodiment of the invention and the graph of a relation of operating voltage.
The pixel electrode of 100:IPS electrode 102:IPS electrode
Substrate under the common electrode 106:IPS electrode of 104:IPS electrode
Substrate 200:FFS electrode on the 108:IPS electrode
The common electrode of the pixel electrode 204:FFS electrode of 202:FFS electrode
The insulation course of substrate 208:FFS electrode on the 206:FFS electrode
30: liquid crystal indicator 32: the bottom electrode substrate
34: top electrode substrate 36: liquid crystal layer
320: 322: the first transparent electrode layers of glass substrate
326: the second transparent insulating layers of 324: the first transparent insulating layers
330: the first projections of 328: the first transparent electrode layers
Projection was 334: the first in 332: the second
336: the second 338: the three
342: the second electrode patterns of 340: the first electrode patterns
θ: angle
Embodiment
Figure 6 shows that the structural representation of the liquid crystal indicator of one embodiment of the invention.Be simplicity of illustration, a pixel region of the only corresponding liquid crystal indicator 30 of Fig. 6, in fact liquid crystal indicator 30 comprises a plurality of pixel regions.Each pixel region of liquid crystal indicator 30 for example is provided with a membrane transistor (figure does not show).
The material of first transparent electrode layer 322 and second transparent electrode layer 328 can be indium tin oxide (indium tin oxide is called for short ITO), indium-zinc oxide (indium zinc oxide) or other suitable transparent conductive materials.Top electrode substrate 34 can be a glass substrate, but not as limit.Liquid crystal layer 36 can be a blue phase liquid crystal layer.Though embodiments of the invention are example with the blue phase liquid crystal display, also also non-limiting range of application of the present invention.
Further, second transparent insulating layer 326 comprises a plurality of first projections 330 and a plurality of second projection 332.Be provided with in each pixel region those first projections 330 one of them and those second projections 332 one of them.Above-mentioned first projection 330 and above-mentioned second projection 332 have contact one first 334 of first transparent insulating layer 324, relative with first 334 one second 336 and be connected between first 334 and second 336 one the 3rd 338 respectively, and press from both sides an acute angle theta between the 3rd 338 and first 334.
Suppose that the area of first transparent insulating layer 324 in each pixel region is A1, first 334 area of those first projections 330 and those second projections 332 is respectively A2, and second 336 area of those first projections 330 and those second projections 332 is respectively A3.So, preferred, A1, A2, and A3 satisfy following relational expression: 0＜A2＜A1; 0.1xA2＜A3＜A2.
Further, second transparent electrode layer 328 comprises a plurality of first electrode patterns 340 that cover a little first projections 330 respectively, and a plurality of second electrode patterns 342 that cover a little second projections 332 respectively.In addition, d represents the clearance distance of first transparent insulating layer 324 to top electrode substrate 34 among Fig. 6, and z represents the distance between second transparent electrode layer 328 and the top electrode substrate 34.
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, the liquid crystal indicator that foundation the present invention is proposed and its embodiment of manufacture method, structure, feature and the effect thereof of electrode base board thereof, describe in detail as after.
In the liquid crystal indicator 30 of first embodiment of the invention, distance between first 334 and second 336 of those first projections 330 and those second projections 332 for example is 1.5 microns, angle theta between the 3rd 338 and first 334 for example is 45 degree, each first electrode pattern 340 for example is respectively 4 microns with the width of each second electrode pattern 342, distance in each pixel between first electrode pattern 340 and second electrode pattern 342 for example is 4 microns, the thickness of first transparent insulating layer 324 for example is 0.2 micron, and first transparent insulating layer 324 for example is 6 microns to the clearance distance d of top electrode substrate 34.In addition, for example be to adopt Kerr constanr (kerr constant) to be about the blue phase liquid crystal of 4.77x10-10mV-2 among first embodiment.
Figure 7 shows that under the first embodiment of the invention condition, when z/d gets different numerical value, the electric field energy distribution plan of liquid crystal indicator 30.Fig. 8 is presented at the synoptic diagram that concerns of the penetrance of liquid crystal indicator 30 under the first embodiment of the invention condition and operating voltage.Found that electrode structure of the present invention has improves the problem that traditional FFS Electrode Field is too concentrated, and the blue phase liquid crystal that operating voltage just can make Kerr constanr be about 4.77x10-10mV-2 when being 40V reaches the highest 20% penetrance.Therefore, the operating voltage of the liquid crystal indicator 30 of present embodiment can significantly reduce.
Present embodiment utilizes first projection 330 and second projection, 332 difference bed hedgehopping first electrode pattern 340 and second electrode patterns 342 of first substrate 320, make between first transparent electrode layer 322 and first electrode pattern 340 and second electrode pattern 342 and produce highfield, make simultaneously and produce auxiliary horizontal component of electric field between first electrode pattern 340 and second electrode pattern 342, thereby it is too little to improve the horizontal component of electric field that traditional monolateral transverse electric field effect electrode produced, and the problem too concentrated of traditional fringe field effect Electrode Field.So, can reduce the operating voltage of liquid crystal indicator 30.
Basic identical in the liquid crystal indicator 30 of second embodiment of the invention with the parameter of first embodiment, difference is: first transparent insulating layer 324 for example is 6.3 microns to the clearance distance d of top electrode substrate 34, the thickness of first transparent insulating layer 324 can be 0.2 micron, also can be 0.7 micron.In addition, for example be to adopt Kerr constanr to be about the blue phase liquid crystal of 6x10-10mV-2 among second embodiment.Fig. 9 is presented under the second embodiment of the invention condition, the penetrance of liquid crystal indicator 30 and operating voltage concern synoptic diagram.Found that the thickness when first transparent insulating layer 324 can make operating voltage increase about 3 volts when 0.2 micron is increased to 0.7 micron.Therefore the distance of dwindling between first transparent electrode layer 322 and second transparent electrode layer 328 can reduce operating voltage.
Hereinafter will introduce a kind of method of making above-mentioned bottom electrode substrate 32 of one embodiment of the invention, to dwindle the distance between first transparent electrode layer 322 and second transparent electrode layer 328.This method of making bottom electrode substrate 32 comprises the following steps:
At first, provide a glass substrate 320, on glass substrate 320, form first transparent electrode layer 322 then.The material of first transparent electrode layer 322 for example is ITO, IZO or other transparent conductive materials, and first transparency electrode layer by layer 322 thickness for example be 400 dusts (angs trom).
Then, on first transparent electrode layer 322, form first transparent insulating layer 324 and second transparent insulating layer 326 successively.Second transparent insulating layer 326 comprises a plurality of first projections 330 and a plurality of second projections 332.The material of first transparent insulating layer 324 for example is a silicon nitride (SiNx), and first transparent insulating layer, 324 thickness are about 2000 dusts.The thickness of first projection 330 and second projection 332 is about 1.5 microns.
Then, on second transparent insulating layer 326, form second transparent electrode layer 328 that covers a plurality of first projections 330 and a plurality of second projections 332.The material of second transparent electrode layer 328 for example is ITO, IZO or other transparent conductive materials, and the thickness of second transparent electrode layer 328 for example is 400 dusts.
Be appreciated that the concrete formation method of each step is not limited to method listed above in the said method, also can adopt other equivalent method.In addition, before forming first transparent electrode layer 322 on the glass substrate 320, can be prior to forming membrane transistor and peripheral circuit on the glass substrate 320.Concrete step comprises: form a first metal layer (figure does not show) on glass substrate 320.The first metal layer can comprise that for example about 3000 dusts of thickness (angstrom) and material for example for example are the metal film of molybdenum (molybdenum) for the metal film of aluminium (aluminum), neodymium (neodymium) and for example about 500 dusts of thickness and material.
Then, on the first metal layer, form the 3rd insulation course (not drawing) that covers the first metal layer.The formation method of the 3rd insulation course can be chemical vapour deposition technique.In more detail, the formation method of the 3rd insulation course for example is plasma vapor phase deposition (plasma enhanced chemical vapor deposition is called for short PECVD).The material of the 3rd insulation course for example is a silicon nitride (SiNx), and the thickness of the 3rd insulation course is for example approximately between 3800-4300 dust (A).
Afterwards, on the 3rd insulation course, form one semiconductor layer (not drawing).This semiconductor layer for example comprises an amorphous silicon semiconductor layer and a N type amorphous silicon semiconductor layer.The thickness of amorphous silicon semiconductor layer for example is about 500 dusts, and the thickness of N type amorphous silicon semiconductor layer for example is about 200 dusts.
Then, on semiconductor layer, form one deck second metal level (not drawing).Second metal level for example comprises that for example about 500 dusts of thickness and material for example for example for example are the metal film of titanium for the metal film of aluminium and for example about 1000 dusts of thickness and material for for example about 1800 dusts of metal film, thickness of titanium (titanium) and material.
Then, on second metal level, deposit the 4th insulation course (not drawing) that one deck covers second metal level.The material of the 4th insulation course is a silicon nitride for example, and the thickness of the 4th insulation course for example is about 2000 dusts.The first above-mentioned transparent electrode layer 322 for example is to be formed on this 4th insulation course.
In said method, form membrane transistor at glass substrate 320 earlier, and then form first transparent electrode layer 322, such first transparent electrode layer 322 and 328 distances of second transparent electrode layer every the 2000-3000 dust.Because the distance of first transparent electrode layer 322 and second transparent electrode layer 328 is dwindled, so can reduce the operating voltage of liquid crystal indicator 30.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1. a liquid crystal indicator is characterized in that, comprising:
One first substrate comprises:
One glass substrate, this glass substrate has a plurality of pixel regions;
One first transparent electrode layer is disposed on this glass substrate;
One first transparent insulating layer is disposed on this first transparent electrode layer;
One second transparent insulating layer is disposed on this first transparent insulating layer, and wherein this second transparent insulating layer comprises a plurality of first projections and a plurality of second projection, and be provided with in each pixel region those first projections one of them and those second projections one of them; And
One second transparent electrode layer comprises a plurality of first electrode patterns that cover those first projections respectively and a plurality of second electrode patterns that cover those second projections respectively;
One second substrate is relative with this first substrate; And
One liquid crystal layer is disposed between this second transparent electrode layer and this second substrate of this first substrate.
2. liquid crystal indicator according to claim 1, it is characterized in that: those first projections and those second projections have contact one first of this first transparent insulating layer, relative with this first one second and be connected between this first and this second one the 3rd respectively, and press from both sides an acute angle between the 3rd and this first.
3. liquid crystal indicator according to claim 2, it is characterized in that: the area of this first transparent insulating layer in each pixel region is A1, those areas of first of those first projections and those second projections are respectively A2, those areas of second of those first projections and those second projections are respectively A3, and 0＜A2＜A1,0.1xA2＜A3＜A2.
4. liquid crystal indicator according to claim 2 is characterized in that: this acute angle is 45 degree.
5. liquid crystal indicator according to claim 2 is characterized in that: the distance between this first and this second is 1.5 microns.
6. liquid crystal indicator according to claim 1, it is characterized in that: the thickness of this first transparent insulating layer is 0.2 micron, the width of each first electrode pattern and each second electrode pattern is respectively 4 microns, and each pixel in this first electrode pattern and the distance between this second electrode pattern be 4 microns.
7. liquid crystal indicator according to claim 1 is characterized in that: this second substrate is a glass substrate, and this liquid crystal layer is a blue phase liquid crystal layer.
8. liquid crystal indicator according to claim 1 is characterized in that: be provided with a membrane transistor in this each pixel region.
9. the manufacture method of an electrode base board is characterized in that may further comprise the steps:
Provide a glass substrate, and this glass substrate have a plurality of pixel regions;
On this glass substrate, form one first transparent electrode layer;
On this first transparency electrode, form one first transparent insulating layer;
Form one second transparent insulating layer on this first transparent insulating layer, this second transparent insulating layer comprises a plurality of first projections and a plurality of second projection, and be provided with in each pixel region those first projections one of them and those second projections one of them; And
Form one second transparent electrode layer on this second transparent insulating layer, this second transparent electrode layer comprises a plurality of first electrode patterns that cover those first projections respectively and a plurality of second electrode patterns that cover those second projections respectively.
10. the manufacture method of electrode base board according to claim 9 is characterized in that: further may further comprise the steps before forming this first transparent electrode layer:
On this glass substrate, form a first metal layer;
Form one the 3rd insulation course that covers this first metal layer;
On the 3rd insulation course, form semi-conductor layer;
On this semiconductor layer, form one second metal level; And
Form one the 4th insulation course that covers this second metal level, and this first transparent electrode layer is to be formed on the 4th insulation course.
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| CN103076701A (en) * | 2011-10-25 | 2013-05-01 | 株式会社日本显示器东 | Liquid crystal display device and manufacturing method therefor |
| CN103176316A (en) * | 2012-12-14 | 2013-06-26 | 友达光电股份有限公司 | Liquid crystal display panel |
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| CN106292082A (en) * | 2015-05-15 | 2017-01-04 | 南京瀚宇彩欣科技有限责任公司 | The dot structure of LCDs and manufacture method thereof |
| CN104991386A (en) * | 2015-08-04 | 2015-10-21 | 武汉华星光电技术有限公司 | Transflective blue-phase liquid crystal panel |
| CN104977769A (en) * | 2015-08-04 | 2015-10-14 | 武汉华星光电技术有限公司 | Blue phase liquid crystal display panel and blue phase liquid crystal display |
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Application publication date: 20110112 |