CN103035594A - 一种新型功率半导体器件模块 - Google Patents

一种新型功率半导体器件模块 Download PDF

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CN103035594A
CN103035594A CN201210570187XA CN201210570187A CN103035594A CN 103035594 A CN103035594 A CN 103035594A CN 201210570187X A CN201210570187X A CN 201210570187XA CN 201210570187 A CN201210570187 A CN 201210570187A CN 103035594 A CN103035594 A CN 103035594A
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module
cooling liquid
outer shell
substrate
semiconductor
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CN201210570187XA
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盛况
陈思哲
汪涛
郭清
谢刚
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Zhejiang University ZJU
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Zhejiang University ZJU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

本发明提供了一种散热效率高的新型的功率模块的设计方案，该模块包括模块外壳，在所述模块外壳内从下至上设置有衬底、直接覆铜层、至少两个半导体芯片以及模块外壳与衬底、直接覆铜层和半导体芯片之间填充的绝缘冷却液，所述绝缘冷却液可以为去离子水、3MFluorinertFluids溶液中的任意一种，所述外壳两侧设置有阀门，用以控制冷却液的进出。本发明利用绝缘冷却液代替硅胶，并在模块外壳两端开口并设置阀门，构造水流通路，散热效率高。

Description

一种新型功率半导体器件模块
技术领域
本发明涉及功率电力领域，特别涉及功率半导体器件模块领域。
本发明涉及一种功率器件模块，具体的讲，为一种绝缘栅双极晶体管（IGBT）或金属氧化物场效应晶体管（MOSFET）功率模块。本发明适用于硅基器件和碳化硅基器件。
背景技术
以绝缘栅双极型晶体管和金属氧化物场效应晶体管为主的功率模块，具有输出功率大并且发热量大等特点，有必要进行冷却，以确保它们的可靠运行。
目前，对于功率模块散热能力的改善主要从改变模块组成材料类型以及改变模块各层材料厚度入手，如使用导热系数高的材料或增加特定层的厚度等，对模块自身结构的改变较少。
模块的散热条件对模块的特性起着至关重要的作用。现有的功率模块内部通常是由硅胶填充，但硅胶的导热性能极差，功率芯片产生的热量基本无法从上方传递出去。因此，模块的散热通常是通过在底部涂抹导热硅脂，并贴敷到风冷或者水冷散热器上实现的。
这种方法的散热效率较低，同时填充硅脂的功率模块结构也从根本上打消了功率芯片双向散热的可能性。
发明内容
本发明所要解决的问题是针对传统的功率模块结构在散热能力上的不足，以及无法引入双面冷却的缺点，提供一种新型的功率模块的设计方案，利用对模块的特别设计，提高模块整体的散热效率并将芯片双面散热引入功率模块中。
因此，本发明采用以下技术方案：
该模块包括模块外壳，在所述模块外壳内从下至上设置有衬底、直接覆铜层、至少两个半导体芯片以及模块外壳与衬底、直接覆铜层和半导体芯片之间填充的绝缘冷却液，所述绝缘冷却液可以为去离子水、3M Fluorinert Fluids溶液中的任意一种，所述外壳两侧设置有阀门，用以控制冷却液的进出。
在采用以上技术方案的基础上，本发明还可以采用以下技术方案：
所述模块为以绝缘栅双极型晶体管（IGBT）或金属氧化物场效应晶体管（MOSFET）为主的功率模块。
以往的绝缘栅双极晶体管（IGBT）或金属氧化物场效应晶体管（MOSFET）功率模块主要由衬底、直接敷铜层、芯片及模块内部填充的绝缘硅胶组成。
由于采用了本发明的技术方案，本发明利用绝缘冷却液代替硅胶，并在模块外壳两端开口并设置阀门，构造水流通路，散热效率高。
附图说明
图1为本发明示意图。
具体实施方式
参考附图。
本发明所述的模块包括模块外壳1，并在该模块外壳1内从下至上设置有衬底2、直接覆铜层3、至少两个半导体芯片4以及模块外壳1与衬底2、直接覆铜层3和半导体芯片4之间填充的绝缘冷却液5，所述绝缘冷却液5可以为去离子水、3M Fluorinert Fluids溶液中的任意一种，所述外壳两侧设置有阀门6，用以控制冷却液的进出。
与常规的功率模块使用硅胶进行内部填充不同，本例提出的功率模块在其内部引入了冷却液通道，并使用绝缘冷却液作为冷却介质。绝缘冷却液从模块右上方的阀门流入，从左上方的阀门流出，上表面带走芯片产生的多余的热量，实现双面冷却。

Claims (2)

1.一种新型功率半导体器件模块，该模块包括模块外壳（1），其特征在于在所述模块外壳（1）内从下至上设置有衬底（2）、直接覆铜层（3）、至少两个半导体芯片（4）以及模块外壳与衬底（2）、直接覆铜层（3）和半导体芯片（4）之间填充的绝缘冷却液，所述绝缘冷却液可以为去离子水、3M Fluorinert Fluids溶液中的任意一种，所述外壳两侧设置有阀门，用以控制冷却液的进出。
2.根据权利要求1所述的一种新型功率半导体器件模块，其特征在于所述模块为以绝缘栅双极型晶体管或金属氧化物场效应晶体管为主的功率模块。
CN201210570187XA 2012-12-25 2012-12-25 一种新型功率半导体器件模块 Pending CN103035594A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106057754A (zh) * 2015-08-02 2016-10-26 谢彦君 一种功率器件单管及其冷却装置
CN106488690A (zh) * 2016-11-16 2017-03-08 国电南瑞科技股份有限公司 一种低电磁干扰的水冷散热器
CN106558560A (zh) * 2015-09-29 2017-04-05 比亚迪股份有限公司 功率模块和具有其的车辆

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021924A (en) * 1988-09-19 1991-06-04 Hitachi, Ltd. Semiconductor cooling device
US5448108A (en) * 1993-11-02 1995-09-05 Hughes Aircraft Company Cooling of semiconductor power modules by flushing with dielectric liquid
EP1748688A2 (en) * 2005-07-28 2007-01-31 Delphi Technologies, Inc. Electronic package and method of cooling electronics
CN101803019A (zh) * 2007-09-17 2010-08-11 国际商业机器公司 集成电路叠层及其热管理

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021924A (en) * 1988-09-19 1991-06-04 Hitachi, Ltd. Semiconductor cooling device
US5448108A (en) * 1993-11-02 1995-09-05 Hughes Aircraft Company Cooling of semiconductor power modules by flushing with dielectric liquid
EP1748688A2 (en) * 2005-07-28 2007-01-31 Delphi Technologies, Inc. Electronic package and method of cooling electronics
CN101803019A (zh) * 2007-09-17 2010-08-11 国际商业机器公司 集成电路叠层及其热管理

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106057754A (zh) * 2015-08-02 2016-10-26 谢彦君 一种功率器件单管及其冷却装置
CN106558560A (zh) * 2015-09-29 2017-04-05 比亚迪股份有限公司 功率模块和具有其的车辆
CN106488690A (zh) * 2016-11-16 2017-03-08 国电南瑞科技股份有限公司 一种低电磁干扰的水冷散热器

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Application publication date: 20130410