CN103035551A - Apparatus and method for treating substrate - Google Patents
Apparatus and method for treating substrate Download PDFInfo
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- CN103035551A CN103035551A CN201210269687XA CN201210269687A CN103035551A CN 103035551 A CN103035551 A CN 103035551A CN 201210269687X A CN201210269687X A CN 201210269687XA CN 201210269687 A CN201210269687 A CN 201210269687A CN 103035551 A CN103035551 A CN 103035551A
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- substrate
- housing
- supply port
- treatment fluid
- supporting member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
Abstract
Provided are an apparatus and a method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.
Description
Technical field
Equipment and the method that the present invention relates to treatment substrate disclosed herein, and relate more specifically to equipment and method by the supercritical process treatment substrate.
Background technology
Semiconductor device is made by kinds of processes, and such as photoetching process, wherein, photoetching process is forming circuit pattern such as silicon chip at substrate.During such technique, produce multiple pollutant, such as particulate, organic pollution and metal impurities.Such pollutant causes defective and affects thus performance of semiconductor device and the processing output capacity at substrate.Therefore, comprise that in process for fabrication of semiconductor device cleaning is to remove pollutant.
For example, cleaning comprises: chemical technology, and wherein use chemicals that pollutant is removed from substrate; Washing process wherein uses pure water flush away chemicals; And drying process, wherein substrate is dried.In such drying process, to use such as the organic solvent of isopropyl alcohol (IPA) and replace pure water, described organic solvent is such as having lower surface tension, and organic solvent is evaporated.
Yet although organic solvent is used to drying process, in the semiconductor device of the fine circuitry pattern with 30nm or less live width, described drying process can cause the pattern shrinkage.Thus, replace this kind drying process, increased the use to the supercritical drying drying process.
Summary of the invention
The present invention is provided in order to the non-patterned side by coming dry substrate with supercritical fluid and the patterned side of substrate.
In addition, the present invention is provided to prevent that substrate is in the supercritical process medium dip.
Feature of the present invention and aspect are not limited to above-mentioned these features and aspect, and by following description and accompanying drawing, other feature and aspect of the present invention will clearly be understood by those skilled in the art.
Embodiments of the invention provide a kind of equipment for the treatment of substrate, and described equipment comprises: housing, and described housing is provided for carrying out the space of technique; Supporting member, described supporting member is arranged in the described housing with supporting substrate; Supply port, described supply port are configured to treatment fluid is supplied to described housing; Shading member, described shading member are arranged between described supply port and the described supporting member to stop described treatment fluid to be directly injected into described substrate; And outlet, described outlet is configured to described treatment fluid is discharged from housing.
In certain embodiments, described supply port can comprise the first supply port and second supply port of the different surface that is arranged on described housing, and described shield can be arranged between described supporting member and described the first supply port.
In other embodiments, the lower surface that described the first supply port can be arranged on described housing is sentenced the middle section that described treatment fluid is injected into the bottom side of described substrate, and the upper surface that described the second supply port can be arranged on described housing is sentenced the middle section that described treatment fluid is injected into the top side of described substrate.
Also in other embodiments, described equipment can further comprise controller, and described controller executive control operation is to pass through described the first supply port and then to supply with treatment fluid by described the second supply port.
Also in other embodiments, described equipment can further comprise strutting piece, and described strutting piece extends from the lower surface of described housing, and wherein said shield can be placed on the described strutting piece.
Also in other embodiments, described shield can have the radius greater than the radius of described substrate.
In a further embodiment, described technique can be supercritical process, and described treatment fluid can be the supercritical fluid form.
In embodiment further, described housing can comprise upper shell and be arranged on the lower house of described upper shell below, and wherein said equipment can further comprise lifting member, and described lifting member is configured to promote in described upper shell and the described lower house.
In embodiment further, described supporting member can be from described upper shell to downward-extension, and the lower end of described supporting member can flatly bend to support the fringe region of described substrate.
In embodiment further, described equipment can further comprise the horizontal location member, and described horizontal location member is in order to regulate the horizontal level of described upper shell.
In certain embodiments, described the first supply port can be arranged on described lower house place, and described the second supply port can be arranged on described upper shell place.
In other embodiments, described housing can have the side of opening and comprise that vertically movably door is with the side of the described opening of open and close.
Also in other embodiments, described equipment can further comprise pressing member, and described pressing member is configured to pressure is applied to described door with the described housing of closure.
In other embodiments of the invention, provide the method for the treatment of substrate, described method comprises: substrate is carried in the housing; Described substrate is placed on the supporting member; Treatment fluid is supplied to described substrate; Stop described treatment fluid to be directly injected into described substrate; Described treatment fluid is discharged from described housing; And described substrate is delivered out described housing.
In certain embodiments, the available shield that is arranged on described supporting member and supplies with between the supply port of described treatment fluid of the prevention of described treatment fluid is carried out.
In other embodiments, the supply of described treatment fluid supply port can be carried out as follows: first supply port at the upper surface place by being arranged on described housing injects described treatment fluid towards the top side of described substrate, and second supply port at the lower surface place by being arranged on described housing injects described treatment fluid towards the bottom side of described substrate, and can use the described shield that is arranged between described the second supporting mouth and the described supporting member to carry out prevention to described treatment fluid, thereby prevent from being directly injected into described substrate towards the described treatment fluid that the bottom side of described substrate is injected.
Also in other embodiments, in the supply of described treatment fluid, described treatment fluid can be injected into by described the second supply port, and if the internal pressure of described housing reach predetermined value, then described treatment fluid can begin to be injected into by described the first supply port.
In other embodiment, described treatment fluid can be supercritical fluid, and described supercritical fluid solubilized remains in the organic solvent on the described substrate.
In other embodiment again, described housing can comprise upper shell and be arranged on the lower house of described upper shell below, described substrate can be placed on the described supporting member under the spaced state of described upper shell and described lower house, and after described substrate was carried in the described housing, one in described upper shell and the described lower house can be raised or reduce with the described housing of closure.
Also in other embodiment of the present invention, provide the method for the treatment of substrate, described method comprises: remainingly have the substrate of organic solvent to be carried in the housing with top; Stop simultaneously supercritical fluid to be directly injected into described substrate by supplying with supercritical fluid towards the non-patterned side of substrate, in described housing, form overcritical atmosphere; And after forming overcritical atmosphere, the patterned side that described treatment fluid is injected into described substrate remains in organic solvent and the dry described substrate between the circuit pattern of described substrate with dissolving.
In certain embodiments, can stop described supercritical fluid to be directly injected into described substrate by being arranged on the shading member that injects on the path of supercritical fluid towards the non-patterned side of described substrate.
In other embodiments, described supercritical fluid can be supercritical carbon dioxide.
The accompanying drawing summary
Accompanying drawing is included to provide a further understanding of the present invention, and is incorporated in the specification and forms the part of specification.Accompanying drawing illustrates exemplary embodiment of the present invention, and with specification in order to principle of the present invention to be described.In the drawings:
Fig. 1 is the state diagram of carbon dioxide;
Fig. 2 illustrates the according to an embodiment of the invention plane graph of substrate processing apparatus;
Fig. 3 is the sectional view that illustrates the first process chamber of describing among Fig. 2 according to an embodiment of the invention;
Fig. 4 is the sectional view that illustrates the second process chamber of describing among Fig. 2 according to an embodiment of the invention;
Fig. 5 and 6 is figure of the modified example of the second process chamber of describing in the pictorial image 4;
Fig. 7 is the perspective view of another example of the second process chamber of describing in the pictorial image 2;
Fig. 8 is the sectional view that is shown in the second process chamber of describing among Fig. 7;
Fig. 9 is the sectional view of another example of the second process chamber of describing in the pictorial image 2;
Figure 10 is the figure that is stacked such as this type of second process chamber of describing among Fig. 4;
Figure 11 is be used to the according to an embodiment of the invention flow chart of substrate processing method using same is described;
Figure 12 is the flow chart for another embodiment of explanation substrate processing method using same; With
Figure 13 to Figure 16 is the figure for the operation of explanation substrate processing method using same.
Embodiment
In the description hereinafter, use term and the description of drawings embodiment of the invention, and do not limit the present invention.
That use among the present invention and will not describe in detail with the irrelevant prior art of design of the present invention.
Hereinafter, with the substrate processing apparatus 100 of describing according to exemplary embodiment of the present invention.
Here in order to any substrate of expression in order to manufacture a product, described product such as circuit pattern is formed on semiconductor device and the flat-panel monitor (FPD) on the film to term " substrate ".The example of substrate comprises wafer, such as silicon chip, glass substrate and organic substrate.
Term " supercritical fluid " refers to following any material: because the state (phase) of this material is in the supercriticality greater than its critical temperature and pressure, this material has gas and two kinds of features of liquid.Supercritical fluid has close to the molecular density of the molecular density of liquid with close to the viscosity of the viscosity of gas, and has thus other the ability of material of outstanding diffusivity, penetrating power and dissolving.Therefore, supercritical fluid is favourable in chemical reaction.In addition, supercritical fluid has surface tension hardly, hardly microstructure is applied interfacial tension thus.
The characteristic of supercritical fluid has been used in the execution of supercritical process, and the example of supercritical process comprises supercritical drying drying process and overcritical etching technics.Hereinafter, will be based on supercritical drying Interpretations supercritical process.For explaining for purpose of brevity, although following explanation is based on the supercritical drying drying process and provides, substrate processing apparatus 100 can be used to carry out other supercritical process.
Can carry out the supercritical drying drying process in supercritical fluid, to dissolve organic solvent and the dry substrate (S) on the circuit pattern that remains in substrate (S).In this case, can obtain satisfied drying efficiency, prevent simultaneously the pattern shrinkage.The material that can mix with organic solvent can be used as the supercritical fluid in the supercritical drying drying process.For example, supercritical carbon dioxide (scCO2) can be used as supercritical fluid.
Fig. 1 is the state diagram of carbon dioxide.
Because carbon dioxide has 31.1 ℃ relatively low critical temperature, and the critical pressure of 7.38Mpa, by regulating temperature and pressure, the state that makes CO 2 supercritical and control carbon dioxide is easy.In addition, carbon dioxide is cheap.In addition, carbon dioxide is nontoxic, harmless, nonflammable and be inertia, and to have be that approximately ten to hundred times the diffusion coefficient of diffusion coefficient of water or other organic solvent is with rapid infiltration and replace organic solvent.In addition, carbon dioxide has surface tension hardly.That is to say, the characteristic of carbon dioxide is suitable for the substrate (S) that drying has fine pattern.In addition, the carbon dioxide that obtains from the byproduct of various chemical reactions can be used again, and the carbon dioxide that is used for the supercritical drying drying process can separate to recycle carbon dioxide from organic solvent by making the carbon dioxide evaporation.That is to say, carbon dioxide is environmental protection.
Hereinafter, according to an embodiment of the invention substrate processing apparatus 100 will be described.The substrate processing apparatus 100 of embodiment can comprise in order to execution the cleaning of supercritical drying drying process.
Fig. 2 illustrates the according to an embodiment of the invention plane graph of substrate processing apparatus 100.
With reference to figure 2, substrate processing apparatus 100 comprises index module 1000 and processing module 2000.
The container of storage substrate (C) is placed on the loading area 1100.Front opening film magazine (FOUP) can be used as container (C).Container (C) can be carried to loading area 1100 or be carried to exterior lateral area from loading area 1100 from exterior lateral area via overhead conveyor (OHT).
Transmit framework 1200 and deliver substrate being placed between container (C) on the loading area 1100 and the processing module 2000.Transmit framework 1200 and comprise index manipulator 1210 and hint track 1220.Index manipulator 1210 can be at delivery substrate when hint track 1220 moves.
Substrate is temporarily stored in the surge chamber 2100 when transmitting between index module 1000 and processing module 2000.Dashpot can be formed in the surge chamber 2100 to place therein substrate.For example, index manipulator 1210 can pick up substrate (S) and substrate (S) is placed on the dashpot from container (C), and the transfer robot 2210 of transfer chamber 2200 can pick up substrate and substrate is sent to the first process chamber 3000 or the second process chamber 4000 from dashpot.A plurality of dashpots can be formed in the surge chamber 2100, so that a plurality of substrate (S) can be placed in the surge chamber 2100.
Substrate (S) delivers between surge chamber 2100, the first process chamber 3000 and the second process chamber 4000 by transfer chamber 2200.Transfer chamber 2200 can comprise transfer robot 2210 and transmission track 2220.Transfer robot 2210 can be at delivery substrate when transmission track 2220 moves.
The first process chamber 3000 and the second process chamber 4000 can be in order to carry out cleaning.The step of cleaning can one after the other be carried out in the first process chamber 3000 and the second process chamber 4000.For example, the chemical technology of cleaning (cleaning process), washing process (rinsing process) and organic solvent technique can be carried out in the first process chamber 3000, and the supercritical drying drying process of cleaning can be carried out in the second process chamber 4000.
The first process chamber 3000 and the second process chamber 4000 are arranged on the side of transfer chamber 2200.For example, the first process chamber 3000 and the second process chamber 4000 opposite side that can be arranged on transfer chamber 2200 is with towards each other.
The layout of the first process chamber 3000 and the second process chamber 4000 is not limited to above-mentioned mode.That is to say, consider floor space (footprint) or the treatment effeciency of substrate processing apparatus 100, the first process chamber 3000 and the second process chamber 4000 can be arranged by different modes.
Hereinafter, will describe the first process chamber 3000 in detail.
Fig. 3 is the sectional view that illustrates the first process chamber 3000 of describing among Fig. 2.
The first process chamber 3000 can be in order to carry out chemical technology, washing process and organic solvent technique.Alternately, the first process chamber 3000 can be in order to carry out some techniques in this type of technique.Can carry out chemical technology to remove pollutant from substrate (S) by washing agent being applied to substrate (S), can carry out washing process and remove the washing agent that remains on the substrate (S) by rinsing agent being applied to substrate (S), and organic solvent technique can be performed to replace rinsing agent between the circuit pattern that remains in substrate with having low capillary organic solvent.
Comprise supporting member 3100, nozzle arrangement 3200 and collect member 3300 with reference to figure 3, the first process chambers 3000.
But supporting member 3100 supporting substrates (S) and rotary plate (S).Supporting member 310 can comprise supporting bracket 3110, supporting pin 3111, clamp (chucking pin) pin 3112, rotating shaft 3120 and rotary actuator 3130.
Supporting bracket 3110 has the top surface that similar substrate ground is shaped, and supporting pin 3111 and holding pin 3112 are arranged on the top surface of supporting bracket 3110.But supporting pin 3111 supporting substrates (S) and holding pin 3112 can keep substrate securely.
Rotating shaft 3120 is connected to the bottom of supporting bracket 3110.Rotating shaft 3120 receives rotary power from rotary actuator 3130 with rotary support plate 3110.Thus, the substrate (S) that is placed on the supporting bracket 3110 can be rotated.At this moment, holding pin 3112 prevents that substrate (S) from leaving desired location.
The example of organic solvent can comprise: isopropyl alcohol, ethohexadiol, 1-propyl alcohol, oxolane, 4-hydroxy-4-methyl-2-pentanone, n-butyl alcohol, 2-butanols, methyl alcohol, ethanol, n-propyl alcohol and dimethyl ether.Such organic solvent can solution or the form of gas use.
Collect member 3300 and collect the chemicals of supplying with.If chemicals is provided for substrate (S) by nozzle arrangement 3200, then supporting member 3100 rotatable substrates (S) are to be assigned to chemicals equably the whole zone of substrate (S).When substrate (S) when being rotated, chemicals can disperse from substrate (S).Collect member 3300 and collect the chemicals that scatters out from substrate (S).
Collect member 3300 and can comprise collection storage device (collecting vessel) 3310, gathering line 3320, lifting strip 3330 and lift actuator 3340.
A plurality of collection storage devices 3310 can be provided.In this case, collection storage device 3310 can have the ring-type that centers on supporting bracket 3110 and in succession separate with supporting bracket 3110 when when the top side is seen.Collection storage device 3310 is far away apart from supporting bracket 3110, and collection storage device 3310 is higher.Collecting notch 3311 is formed between the collection storage device 3310 to receive the chemicals from substrate (S) scattering.
Lifting strip (lift bar) 3330 is connected to collection storage device 3310 to receive power from lift actuator 3340 and at mobile collection storage device 3310 vertically.If a plurality of collection storage devices 3310 are provided, then lifting strip 3330 can be connected to outmost collection storage device 3310.When the chemicals of scattering was collected by one of them collection notch 3311, lift actuator 3340 can use lifting strip 3330 to promote or reduce collection storage device 3310, the position of collecting notch 3311 to regulate one of them.
Hereinafter, will describe the second process chamber 4000 in detail.
The second process chamber 4000 can use to use supercritical fluid to carry out the supercritical drying drying process.As mentioned above, the second process chamber 4000 can be in order to processing and the supercritical drying drying process of carrying out other.
Hereinafter, will describe according to an embodiment of the invention the second process chamber 4000 in detail.
Fig. 4 is the sectional view of the second process chamber 4000 of describing among Fig. 2.
Can comprise housing 4100, lifting member 4200, supporting member 4300, heater 4400, supply port 4500, shading member 4600 and outlet 4700 with reference to figure 4, the second process chambers 4000.
If lower house 4120 moves down away from upper shell 4110, then open the inboard of the second process chamber 4000, so that substrate (S) can be carried in the second process chamber 4000 or be delivered out the second process chamber 4000.Remaining in the above owing to the organic solvent technique of carrying out in the first process chamber 3000 have the substrate (S) of organic solvent can be carried in the second process chamber 4000.If lower house 4120 relative upper shells 4110 move up, then the inboard of the second process chamber 4000 is closed, and then can carry out the supercritical drying drying process in the second process chamber 4000.Alternately, the lower house 4120 of housing 4100 can be fixed, and the upper shell 4110 of housing 4100 can be vertically movably.
Lifting member 4200 is used for promoting or reduction lower house 4120.Lifting member 4200 can comprise lift cylinder 4210 and lifting arm (lift rod) 4220.Lift cylinder 4210 is coupled to lower house 4120 to apply vertical actuating force, that is to say, applies lifting/reduction power to lower house 4120.During the supercritical drying drying process, although the internal pressure of the second process chamber 4000 is the high value that is equal to or greater than critical pressure, but lift cylinder 4210 produces the actuating force that is enough to lower house 4120 relative upper shells 4110 promotions, with firm closure the second process chamber 4000.Insert in the lift cylinder 4210 end of lifting arm 4220, and the other end from described end with the upwardly extending lifting arm 4220 of vertical direction is connected to upper shell 4110.In this structure, if lift cylinder 4210 produces actuating force, then lift cylinder 4210 and lifting arm 4220 relatively move, and the lower house 4120 that is connected to thus lift cylinder 4210 can promote or reduce.In addition, when lower house 4120 was raised cylinder 4210 and promotes or reduce, lifting arm 4220 guiding lower houses 4120 also stoped upper shell 4110 and lower house 4120 moves horizontally, and upper shell 4110 and lower house 4120 do not depart from regular position or path thus.
The position supporting substrate (S) of supporting member 4300 between upper shell 4110 and lower house 4120.Supporting member 4300 can be on vertical direction from the bottom of upper shell 4110 to downward-extension, the lower end of supporting member 4300 can bend in the horizontal direction.Thus, but the fringe region of supporting member 4300 supporting substrates (S).Because supporting member 4300 only contacts and supporting substrate (S) with the fringe region of substrate (S), the supercritical drying drying process can be on the whole top surface of substrate (S) and most of lower surface of substrate (S) carry out.The top surface of substrate (S) can be the surface of patterning, and the lower surface of substrate (S) can be the surface of non-patterning.In addition, because supporting member 4300 is arranged on the fixing upper shell 4110, when lower house 4120 was raised or reduces, supporting member 4300 is supporting substrate (S) stably.
Provide support member 4300 places at upper shell 4110, horizontal location member 4111 can be arranged on the upper shell 4110.Horizontal location member 4111 is used for regulating the horizontal level of upper shell 4110.The horizontal level that is placed on the substrate (S) on the supporting member 4300 of upper shell 4110 can be conditioned by the horizontal level of regulating upper shell 4110.If substrate (S) tilts during the supercritical drying drying process, the organic solvent that remains on the substrate (S) can flow down, and the part of substrate (S) may not be dried or may be by overdrying thus.Horizontal location member 4111 can occur by the anti-here situation of the horizontal level of regulating substrate (S).Alternately, if if upper shell 4110 is raised or reduction and lower house 4120 is fixed or supporting member 4300 is arranged on the lower house 4120, horizontal location member 4111 can be arranged on the lower house 4120.
Supply port 4500 supplies to the second process chamber 4000 with supercritical fluid.Supply port 4500 can be connected to supply line 4550.Valve can be arranged on supply port 4500 and sentence control from the flow velocity of the supercritical fluid of supply line 4550 supplies.
Supply port 4500 comprises supply port 4510 and lower supply port 4520.Upper supply port 4510 is arranged on upper shell 4110 and sentences the top surface that supercritical fluid is supplied to the substrate (S) that is placed on the supporting member 4300.Lower supply port 4520 is arranged on lower house 4120 and sentences the back side that supercritical fluid is supplied to the substrate (S) that is placed on the supporting member 4300.
The upper supply port 4510 of supply port 4500(and lower supply port 4520) supercritical fluid can be supplied to the middle section of substrate (S).For example, upper supply port 4510 can be located at supporting member 4300 upper supports substrate (S) the top and with the centrally aligned of substrate (S).For example, lower supply port 4520 can be located at supporting member 4300 upper supports substrate (S) the below and with the centrally aligned of substrate (S).Then, along with the supercritical fluid of supplying with by supply port 4500 arrives the middle section of substrate (S) and expands to the fringe region of substrate (S), supercritical fluid can be evenly distributed to whole substrate (S).
Supercritical fluid can be by lower supply port 4520 and is then supplied with by upper supply port 4510.Early stage at the supercritical drying drying process, the internal pressure of the second process chamber 4000 can be lower than critical pressure, and the supercritical fluid that supplies to thus in the second process chamber 4000 can be liquefied.Therefore, if early stage at the supercritical drying drying process, supercritical fluid is supplied to by upper supply port 4510, then the supercritical fluid liquefiable and since gravity fall to substrate (S) and damaged substrate (S).Be fed in the second process chamber 4000 by lower supply port 4520 and after the internal pressure of the second process chamber 4000 reaches critical pressure at supercritical fluid, supercritical fluid can be supplied with by upper supply port 4510, thereby prevents supercritical fluid liquefaction and drop to substrate (S).
The radius of shield 4610 can be similar to or greater than the radius of substrate (S).Then, shield 4610 can fully stop supercritical fluid directly to be injected into substrate (S).Alternately, the radius of shield 4610 can be less than the radius of substrate (S).In the case, the speed of supercritical fluid can reduce the largelyst, stops simultaneously supercritical fluid to be directly injected on the substrate (S), thereby described supercritical fluid can arrive substrate (S) reposefully effectively to carry out the superfluid drying process.
Strutting piece 4620 supports shield 4610.Shield 4610 can be placed on the end of strutting piece 4620.Strutting piece 4620 can extend upward in the direction perpendicular to the lower surface of housing 4100 from the lower surface of housing 4100.Strutting piece 4620 and shield 4610 may not be coupled to each other, and shield 4610 can just place on the strutting piece 4620 and by gravity and is held in position.If strutting piece 4620 and shield 4610 uses the parts such as screw bolt and nut to link, then can be easy to penetrate into supercritical fluid in other material and can infiltrate between described parts and produce and pollute.Alternately, strutting piece 4620 and shield 4610 can be arranged to an integral body.
If early stage at the supercritical drying drying process supplied with supercritical fluids by lower supply port 4520, because the internal pressure of housing 4100 is low, supercritical fluid can promptly be injected into.If the high speed supercritical fluid directly arrives substrate (S), the part of the substrate (S) that is directly injected by supercritical fluid can be by bending (existing picture tilts).In addition, substrate (S) may be shaken owing to the injection of supercritical fluid, and the organic solvent that remains in thus on the substrate (S) can flow to the circuit pattern of substrate (S) and undermine circuit pattern.
Therefore, shield 4610 is arranged between lower supply port 4520 and the supporting member 4300 to stop supercritical fluid to be directly injected into substrate (S), and stops thus substrate (S) to be subject to the damage of the physical force that supercritical fluid applies.
The position of shield 4610 is not limited to the position between lower supply port 4520 and supporting member 4300.
Fig. 5 and Fig. 6 illustrate the modified example of the second process chamber 4000 shown in Fig. 4.
With reference to figure 5, shield 4610 can be arranged on supply port 4510 and be placed between the substrate (S) on the supporting member 4300.With reference to figure 6, shield 4610a can be arranged between supply port 4510 and the supporting member 4300, and shield 4610b can be arranged between lower supply port 4520 and the supporting member 4300.At shield 4610(4610a) be arranged in the situation between upper supply port 4510 and the supporting member 4300, strutting piece 4620 can be from the bottom of upper shell 4110 along vertical direction to downward-extension, and the lower end of strutting piece 4620 can bend in the horizontal direction.Then, shield 4610 can be by Gravity support on strutting piece 4620, and need not any additional coupling components.
In this case, shield 4610 can be placed in the path, and by this path, supercritical fluid is fed into substrate (S) from one of them supply port 4500, and supercritical fluid may not supplied to substrate (S) effectively thus.Therefore, the position of shield 4610 can be subject to the degree of injury of supercritical fluid by considering substrate (S), and the significant degree of supercritical fluid drying substrate (S) is determined.
Particularly, provide in the situation of a plurality of supply ports 4500 at the second process chamber 4000, shield 4610 can be placed in the following path: early stage at the supercritical drying drying process, supercritical fluid is directly supplied to substrate (S) by this path from one of them supply port 4500.
Hereinafter, with another embodiment that describes according to the second process chamber 4000 of another embodiment.
Fig. 7 is the perspective view of another example of the second process chamber 4000 shown in the pictorial image 2, and Fig. 8 is the sectional view of the second process chamber 4000 in the pictorial image 7.
Can comprise housing 4100, door 4130, pressing member 4800, supporting member 4300, heater 4400, supply port 4500, shading member 4600 and outlet 4700 with reference to figure 7 and 8, the second process chambers 4000.
Different from the last embodiment of the second process chamber 4000, housing 4100 has single structure.Opening can be formed on a side of housing 4100.Substrate (S) can be carried in the housing 4100 or be delivered out housing 4100 by opening.The side that is formed with described opening of housing 4100 can be perpendicular to the side of transfer chamber 2200, and the second process chamber 4000 arranges along described side.
Supporting member 4300 can be arranged on the door 4130.The surface that is provided with supporting member 4300 of door 4130 can be towards opening.Along with door 4130 moves, the supporting member 4300 that is arranged on the door 4130 can slip into or skid off housing 4100 by described opening.One side of supporting member 4300 can be fixed to door 4130 the surface towards opening, and supporting member 4300 can be from the surface of door 4130 with tabular extension.
But the fringe region of supporting member 4300 supporting substrates (S).For example, in tabular supporting member 430, can form the recess of the similar or shape that is equal to of the shape that has with substrate (S), and the hole can be formed in the described recess.Substrate (S) can be placed on the recess, and the end face of substrate (S) and the back side can expose because of the hole that forms in recess.Thus, whole substrate (S) can be dried during the supercritical drying drying process.
The opening that forms in the side of housing 4100 can have the shape identical with the side view of supporting member 4300, maybe can be a bit larger tham the side of housing 4100.During the supercritical drying drying process, because the inside of housing 4100 is maintained under the high pressure that is equal to or greater than critical pressure, close the size of the required power of housing 4100 and opening with 4130 proportional.Thus, the size of the opening lateral side regions that is adjustable to supporting member 4300 is closed the required power of housing 4100 with reduction.
Pressing member 4800 makes door 4130 move to close or open housing 4100.Pressing member 4800 can comprise by cylinder pressure 4810 and pressing lever 4820.
Can be arranged on the place, both sides of housing 4100 by cylinder pressure 4810.Pressing lever 4820 can insert in the both sides of opening of housing 4100, and the end of pressing lever 4820 can be connected to door 4130.For example, the end of pressing lever 4820 can 4130 be inserted through moving into one's husband's household upon marriage, and masthead end 4821 can be arranged on the end of door 4130 at a relative side place at the opening with housing 4100 of door 4130.
In this structure, pressing lever 4820 can be pressed, and cylinder 4810 moves horizontally so that door 4130 moves horizontally.If door 4130 moves away from opening and supporting member 4300 is exposed to housing 4100 outsides, then transfer robot 2210 can be placed on substrate (S) on the supporting member 4300.Then, door 4130 can be moved to close opening and the substrate (S) that will be placed on the supporting member 4300 is placed in the housing 4100.
In addition, during the supercritical drying drying process, keep door 4130 and opening close contact by cylinder pressure 4810 generation power, that keeps out housing 4100 is tending towards making door 4130 internal pressures of opening.The power that produces by cylinder pressure 4810 is applied to door 4130 by the masthead end 4821 of pressing lever 4820, and masthead end 4821 is arranged on the side relative with opening of door 4130, so that housing 4100 can keep closing during the supercritical drying drying process.
Because those of the second process chamber 4000 among heater 4400, supply port 4500, shading member 4600 and outlet 4700 and the previous embodiment are identical or similar, with the detailed description that does not repeat them.
Hereinafter, will another embodiment of the second process chamber 4000 be described.
Fig. 9 is the sectional view of another embodiment of diagram the second process chamber 4000.
Can comprise housing 4100, door 4130, supporting member 4300, heater 4400, supply port 4500, shading member 4600 and outlet 4700 with reference to figure 9, the second process chambers 4000.
As the housing 4100 of previous embodiment, housing 4100 has single structure, and this single structure has opening at one side place.Door 4130 is configured to vertical mobile to open or close the opening of housing 4100.Door 4130 can comprise door-plate 4131 and door driver element 4132, and door driver element 4132 can make door 4131 vertical mobile to open or close opening.
Supporting member 4300 extends upward in the direction perpendicular to downside from the downside of housing 4100, and the upper end of supporting member 4300 or upper part can horizontal bucklings.Substrate (S) can be placed on the supporting member 4300, and supercritical fluid can be fed into top and the bottom of the substrate (S) that is placed on the supporting member 4300.
Described the embodiment of the second process chamber 4000, a plurality of the second such process chambers 4000 can be arranged in substrate (S) treatment facility 100 with stack manner.
Figure 10 illustrates the second process chamber 4000a, the 4000b of the second process chamber 4000 shown in Fig. 4 and the stacked state of 4000c.
With reference to Figure 10, three the second process chamber 4000a, 4000b and 4000c are by vertically stacking.The quantity of the second process chamber 4000a, 4000b and 4000c can change.
The lower house 4120 of the second the highest process chamber 4000a and the upper shell 4110 of middle the second process chamber 4000b can form as a whole, and the upper shell 4110 of the lower house 4120 of middle the second process chamber 4000b and minimum the second process chamber 4000c can form as a whole.
In this case, except the lower house 4120 of the upper shell 4110 of the second the highest process chamber 4000a and minimum the second process chamber 4000c, the supply port 4500 and the exhaust outlet 4700 that form in housing 4100 can be connected respectively to by the side of housing 4100 supply line 4550 and discharge pipe 4750.Supply line 4550 and discharge pipe 4750 can be formed by elasticity and flexible material.
The lifting arm 4220 of lifting member 4200 can insert and pass the second process chamber 4000a, 4000b and 4000c, and the end of lifting arm 4220 can be connected to the second the highest process chamber 4000a.Lift cylinder 4210 can promote or reduce lifting arm 4220 one after the other to open or close the second process chamber 4000a, 4000b and 4000c from downside or upside.
Although use the situation for the treatment of with supercritical fluid substrate (S) that the present invention has been described for substrate processing apparatus 100, substrate processing apparatus 100 of the present invention is not limited to carries out the supercritical drying drying process.For example, replace supplying with supercritical fluid, substrate processing apparatus 100 can be in order to come treatment substrate (S) by different treatment fluids is supplied to by supply port 4500 in the second process chamber 4000.
In addition, substrate processing apparatus 100 can further comprise the controller for the element of control substrate processing apparatus 100.For example, controller can be controlled heater 4400 with the internal temperature of adjustment housings 4100.In another example, the controlled system of controller is arranged on the valve at nozzle arrangement 3200, supply line 4550 and discharge pipe 4750 places, to regulate the flow velocity of chemicals or supercritical fluid.In another example, controller can be controlled lifting member 4200 or pressing member 4800 to open or close housing 4100.In another example, under the control of controller, supercritical fluid can be supplied to by the one in upper supply port 4510 and the lower supply port 4520, if and the internal pressure of the second process chamber 4000 reaches predetermined value, supercritical fluid can be supplied to by the another one in upper supply port 4510 and the lower supply port 4520.
Controller can be the device such as computer of hardware, software or the combination that is provided as hardware and software.
For example, controller can be hardware, such as the ASIC(application-specific integrated circuit (ASIC)), the DSP(digital signal processor), the DSPD(digital signal processing device), the PLD(programmable logic device), the FPGA(field programmable gate array), processor, microcontroller, microprocessor and the electric device with similar control function.
For example, controller can be software, such as the software code of writing with at least a program language or application.Software can be carried out by the controller that provides with example, in hardware.Alternately, the controller that provides with example, in hardware can be provided from the external equipment such as server software, and can be installed on the controller.
Hereinafter, explanation is used the according to an embodiment of the invention substrate processing method using same of substrate processing apparatus 100.Although use in the following description substrate processing apparatus 100 explanation substrate processing method using sames, this substrate processing method using same can use with substrate processing apparatus 100 similar another equipment and carry out.In addition, substrate processing method using same of the present invention can be stored in by the form of executable code or program in the computer-readable recording medium.
Hereinafter, will the embodiment of substrate processing method using same of the present invention be described.This embodiment relates generally to cleaning.
Figure 11 is for the flow chart of explanation according to the substrate processing method using same of embodiment.
The substrate of this embodiment (S) processing method comprises: operation S110, and wherein substrate (S) is carried in the first process chamber 3000; Operation S120 wherein carries out chemical technology; Operation S130 wherein carries out washing process; Operation S140 wherein carries out organic solvent technique; Operation S150, wherein substrate (S) is carried to the second process chamber 4000; Operation S160 wherein carries out the supercritical drying drying process; With operation S 170, wherein substrate (S) is placed in the container (C) that is placed on loading area 1100.Operation listed above and the order that does not require to list are carried out.For example, carry out before the operation that the operation of listing later can formerly be listed.This is equal in another embodiment of substrate (S) processing method.To describe described operation in detail now.
Substrate (S) is carried in the first process chamber 3000 (S110).The container that at first, wherein stores substrate (S) is placed on the loading area 1100 by carrying device such as OHT.Then, index manipulator 1210 picks up substrate (S) and substrate (S) is placed on the dashpot from container.Transfer robot 2210 from dashpot pick up substrate (S) and with substrate (S) carrying to the first process chamber 3000.In the first process chamber 3000, substrate (S) is placed on the supporting bracket 3110.
After this, carry out chemical technology (S120).After substrate (S) was placed on the supporting bracket 3110, nozzle shaft 3230 was moved by nozzle shaft actuator 3240 and rotates nozzle 3210 directly to be placed on substrate (S) top.Washing agent is injected into the top of substrate (S) by nozzle 3210.Along with injecting washing agent, pollutant is removed from substrate (S).At this moment wait, rotary actuator 3130 makes rotating shaft 3120 rotations with rotary plate (S).Although washing agent scatters from substrate (S), because substrate (S) is rotated, washing agent can be supplied to substrate (S) equably.The washing agent that scatters from substrate (S) is collected in the collection storage device 3310, and washing agent is discharged to the fluid recirculation system (not shown) in collection storage device 3310.At this moment wait, lift actuator 3340 promotes or reduces collection storage device 3310, so that the washing agent that scatters can be collected in one of them collection storage device 3310.
By after substrate (S) is removed, carry out washing process (S130) at pollutant.Carrying out chemical technology with after substrate (S) is removed pollutant, washing agent is deposited on the substrate (S).The nozzle 3210 that injects washing agent is moved the top away from substrate (S), and another nozzle 3210 be moved to substrate (S) directly over the position rinsing agent is injected into the top of substrate (S).The rinsing agent that supplies to substrate (S) cleans the washing agent that remains on the substrate (S).During washing process, substrate (S) can be rotated, and can collect chemicals.Lift actuator 3340 is regulated the height of collection storage device 3310, so that rinsing agent can be collected in one of them collection storage device 3310, this collection storage device is different to collect the collection storage device of washing agent.
After substrate (S) is fully washed, carry out organic solvent technique (S140).After washing process, another nozzle 3210 be moved into substrate (S) directly over the position organic solvent is injected into substrate (S).The rinsing agent that remains on the substrate (S) is substituted by organic solvent.In organic solvent technique, substrate (S) can not rotate or can low speed rotation.Such reason is, if organic solvent evaporates very soon, then the surface tension of organic solvent can cause the interfacial tension between the circuit pattern of substrate (S), thereby causes the circuit pattern shrinkage.
After the organic solvent technique in the first process chamber 3000, substrate (S) is carried in the second process chamber 4000 (S150), and carries out the supercritical drying drying process in the second process chamber 4000.When another embodiment of explanation substrate (S) processing method, operation S150 and S160 will be described in more detail after a while.
After the supercritical drying drying process, substrate (S) is carried to (S170) in the container that is placed on the loading area 1100.The second process chamber 4000 is opened, and transfer robot 2210 picks up substrate (S).Substrate (S) can be carried to surge chamber 2100 by transfer robot 2210, and index manipulator 1210 can be carried to container (C) from surge chamber 2100 with substrate (S).
Hereinafter, will another embodiment of substrate processing method using same of the present invention be described.This other embodiment of substrate (S) processing method relates to the supercritical drying drying process in the second process chamber 4000.
Figure 12 is the flow chart for another embodiment of explanation substrate processing method using same.
The substrate processing method using same of another embodiment comprises: operation S210, and wherein substrate (S) is sent in the second process chamber 4000; Operation S220, its middle shell 4100 is closed; Operation S230, wherein supercritical fluid is fed into lower supply port 4520; Operation S240, wherein supercritical fluid is prevented from being directly injected into substrate (S); Operation S250, wherein supercritical fluid is fed into supply port 4510; Operation S260 wherein discharges supercritical fluid; Operation S270, its middle shell 4100 is opened; With operation S280, wherein substrate (S) is delivered out the second process chamber 4000.To explain operation now.
Figure 13 to 16 is the figure for the substrate processing method using same of explanation Figure 12.
Substrate (S) is carried in the second process chamber 4000 (S210).Transfer robot 2210 is placed on substrate (S) on the supporting member 4300 of the second process chamber 4000.Under organic solvent was deposited in state on the substrate (S), transfer robot 2210 can pick up substrate (S) from the first process chamber 3000, and substrate (S) can be placed on the supporting member 4300.
With reference to Figure 13, have in the situation of up-down structure (upper shell 4110 and lower house 4120) at the second process chamber 4000, at upper shell 4110 and lower house 4120 separately and under the state of opening, transfer robot 2210 is placed on supporting member 4300 with substrate (S).
In the second process chamber 4000 has situation with the slide construction of horizontal sliding door 4130, move away from door 4130 under the state of opening, transfer robot 2210 is placed on substrate (S) on the supporting member 4300.Placing substrate (S) afterwards, door 4130 can move to housing 4100 so that substrate (S) is placed in the second process chamber 4000.
Have in the situation of the structure that door-plate 4131 moves by door driver element 4132 at the second process chamber 4000, transfer robot 2210 is movable in the housing 4100 so that substrate (S) is placed on the supporting member 4300.
After substrate (S) was delivered in housing 4100, housing 4100 was closed (S220).
With reference to Figure 14, have in the situation of up-down structure at the second process chamber 4000, lifting member 4200 relative upper shells 4110 promote lower house 4120 and that is to say to close housing 4100(, close the second process chamber 4000).
Have in the situation of slide construction at the second process chamber 4000, pressing member 4800 makes door 4130 relative openings move horizontally to close housing 4100.In other situation, door driver element 4132 moves door-plate 4131 to close opening.
After the second process chamber 4000 was closed, supercritical fluid was fed into lower supply port 4520(S230).When supercritical fluid began to be supplied to, the internal pressure of housing 4100 can be lower than critical pressure, thus supercritical fluid liquefiable.If supercritical fluid is fed in the position of the over top of substrate (S), then supercritical fluid liquefiable and under action of gravitation, fall to the top of substrate (S) and damaged substrate (S).Therefore, supercritical fluid can at first be supplied to by lower supply port 4520, then is supplied to by upper supply port 4510.At this moment, the inside of housing 4100 can be by supporting member 4300 heating.
Supercritical fluid is prevented from being directly injected into substrate (S) (S240).Refer again to Figure 14, the shield 4610 that is arranged between lower supply port 4520 and the supporting member 4300 can stop the supercritical fluid of supplying with by lower supply port 4520 to be directly injected into substrate (S).Thus, the physical force of supercritical fluid can not be applied to substrate (S), thereby prevents the inclination of substrate (S).The supercritical fluid that injects by lower supply port 4520 in the vertical directions can collide shield 4610 and bottom horizontal flow sheet to substrate (S).
With reference to Figure 15, supercritical fluid is fed into supply port 4510(S250).If supercritical fluid is given by continuous supplying by upper supply port 4510, then the internal pressure of housing 4100 becomes and is equal to or greater than critical pressure, if the inside of housing 4100 is by heater 4400 heating, then the internal temperature of housing 4100 becomes and is equal to or greater than critical temperature.Thus, the inside of housing 4100 can be in supercriticality.When the inside of housing 4100 entered supercriticality, supercritical fluid can be supplied to by upper supply port 4510.That is to say, under the control of controller, when the internal pressure of housing 4100 becomes when being equal to or greater than critical pressure, supercritical fluid can be supplied to by upper supply port 4510.
At this moment wait, the supercritical fluid of supplying with by upper supply port 4510 can stop by not crested plate 4610.Reason is, because the internal pressure of housing 4100 is greater than critical pressure, so that the speed of the supercritical fluid of supplying with by upper supply port 4510 is greatly reduced in housing 4100.Thus, when supercritical fluid arrived substrate (S), the speed of supercritical fluid was too low, and can not cause the inclination of substrate (S).
Owing to not crested of the supercritical fluid plate 4610 of supplying with by upper supply port 4510 stops, then the top side of substrate (S) can be by the supercritical fluid efficient drying.Because the top side of substrate (S) is patterned surfaces normally, do not have shield 4610 can be arranged between supply port 4510 and the supporting member 4300, thereby the supercritical fluid effective supply is remained in the organic solvent between the circuit pattern of top side of substrate (S) to the top side of substrate (S) with removal.Alternately, according to process conditions, shield 4610 can be arranged between supply port 4510 and the supporting member 4300 to stop supercritical fluid to be directly injected into the top side of substrate (S).
If substrate (S) is dissolved in and is able to abundant drying in the supercritical fluid owing to remaining in organic solvent on the substrate (S), supercritical fluid is discharged from (S260).Supercritical fluid is discharged by exhaust outlet 4700 from the second process chamber 4000.The supply of supercritical fluid and discharge can be controlled by the flow velocity that is adjusted in the supercritical fluid in supply line 4550 and the discharge pipe 4750 with controller.Supercritical fluid can be discharged to atmosphere or supercritical fluid recirculating system (not shown).
After supercritical fluid was discharged, if the internal pressure of the second process chamber 4000 fully is reduced to for example atmospheric pressure, then housing 4100 was opened (S270).With reference to Figure 16, lifting member 4200 reduces to open housing 4100 with lower house 4120.
In the second process chamber 4000 had situation with the slide construction of horizontal sliding door 4130, pressing member 4800 made door 4130 move away from the opening of housing 4100 to open housing 4100.Have in the situation of the structure that moves door-plate 4131 by door driver element 4132 at the second process chamber 4000, door driver element 4132 moves door-plate 4131 to open housing 4100.
Substrate (S) is delivered out the second process chamber 4000(S280).After housing 4100 was opened, transfer robot 2210 delivered out the second process chamber 4000 with substrate (S).
According to the present invention, by supercritical fluid being injected into top side and the rear side of substrate (S), can dry whole substrate (S).
In addition, according to the present invention, shield stops supercritical fluid to be directly injected into substrate (S), thereby substrate (S) can not tilt.
Effect of the present invention is not limited to above-mentioned effect, and by describing and accompanying drawing, those skilled in the art will clearly understand other effect of the present invention.
Provide above-described embodiment so that those skilled in the art can easily understand the present invention, and be not intended to limit the present invention.
Thus, embodiment and element thereof can be otherwise or known technology use, and under the prerequisite that does not depart from scope of the present invention, can make in form and details various modifications and change.
In addition, scope of the present invention is limited by following claim, and all differences in this scope will be believed to comprise in the present invention.
Claims (22)
1. equipment for the treatment of substrate, described equipment comprises:
Housing, described housing is provided for carrying out the space of technique;
Supporting member, described supporting member is arranged in the described housing with supporting substrate;
Supply port, described supply port are configured to treatment fluid is supplied to described housing;
Shading member, described shading member are arranged between described supply port and the described supporting member to stop described treatment fluid to be directly injected into described substrate; With
Outlet, described outlet are configured to described treatment fluid is discharged from described housing.
2. equipment according to claim 1, wherein said supply port comprises the first supply port and the second supply port, described the first supply port and described the second supply port are arranged on the different surfaces of described housing, and
Described shield is arranged between described supporting member and described the first supply port.
3. equipment according to claim 2, the lower surface that wherein said the first supply port is arranged on described housing is sentenced the middle section that described treatment fluid is injected into the rear side of described substrate, and
The upper surface that described the second supply port is arranged on described housing is sentenced the middle section that described treatment fluid is injected into the top side of described substrate.
4. equipment according to claim 3 further comprises controller, and described controller executive control operation is with by described the first supply port and then supply with described treatment fluid by described the second supply port.
5. equipment according to claim 3 further comprises the strutting piece that extends from the lower surface of described housing;
Wherein said shield is placed on the described strutting piece.
6. equipment according to claim 1, wherein said shield has the radius greater than the radius of described substrate.
7. equipment according to claim 1, wherein said technique is supercritical process, and described treatment fluid is in Supercritical Conditions.
8. each described equipment in 7 according to claim 1, wherein said housing comprises upper shell and is arranged on the lower house of described upper shell below,
Wherein said equipment further comprises lifting member, and described lifting member is configured to promote the one in described upper shell and the described lower house.
9. equipment according to claim 8, wherein said supporting member is from described upper shell to downward-extension, and the lower end horizontal buckling of described supporting member is to support the fringe region of described substrate.
10. equipment according to claim 9 further comprises the horizontal location member, and described horizontal location member is in order to adjust the horizontal level of described upper shell.
11. equipment according to claim 8, wherein said the first supply port is arranged on described lower house place, and described the second supply port is arranged on described upper shell place.
12. each described equipment in 7 according to claim 1, wherein said housing has open side and comprises the door that can vertically move, and described door is used for opening and closing described open side.
13. equipment according to claim 12 further comprises pressing member, described pressing member is configured to pressure is applied to described door to close described housing.
14. the method for the treatment of substrate, described method comprises:
Substrate is carried in the housing;
Described substrate is placed on the supporting member;
Treatment fluid is supplied to described substrate;
Stop described treatment fluid to be directly injected into described substrate;
Described treatment fluid is discharged from described housing; And
Described substrate is delivered out described housing.
15. method according to claim 14 wherein uses the shield be arranged between described supporting member and the supply port to carry out prevention to described treatment fluid, described treatment fluid is supplied to by described supply port.
16. method according to claim 15, the supply of wherein said treatment fluid is carried out as follows: first supply port at the upper surface place by being arranged on described housing injects described treatment fluid to the top side of described substrate, and second supply port at the lower surface place by being arranged on described housing injects described treatment fluid to the bottom side of described substrate, and
Use is arranged on described shield between described the second supporting mouth and the described supporting member and carries out prevention to described treatment fluid, thereby stops the described treatment fluid that injects to the bottom side of described substrate to be directly injected into described substrate.
17. method according to claim 16, wherein in the supply of described treatment fluid, described treatment fluid is injected into by described the second supply port, and if the internal pressure of described housing reach predetermined value, described treatment fluid begins to be injected into by described the first supply port.
18. each described method in 17 according to claim 14, wherein said treatment fluid is supercritical fluid, and the dissolving of described supercritical fluid remains in the organic solvent on the described substrate.
19. each described equipment in 17 according to claim 14, wherein said housing comprises upper shell and is arranged on the lower house of described upper shell below,
Described substrate is placed on the described supporting member under the spaced state of described upper shell and described lower house, and
After described substrate was carried in the described housing, the one in described upper shell and the described lower house was raised or reduces to close described housing.
20. the method for the treatment of substrate, described method comprises: remainingly have the substrate of organic solvent to be sent in the housing with top; Stop simultaneously described supercritical fluid to be directly injected into described substrate by supplying with supercritical fluid to the non-patterned side of described substrate, in described housing, form overcritical atmosphere; And after forming described overcritical atmosphere, described treatment fluid is injected into the patterned side of described substrate, remains in organic solvent and dry described substrate between the circuit pattern of described substrate with dissolving.
21. method according to claim 20 wherein stops described supercritical fluid to be directly injected into described substrate by the shading member that is arranged on the path, the described non-patterned side of described supercritical fluid along described path to described substrate is injected into.
22. according to claim 20 or 21 described methods, wherein said supercritical fluid is supercritical carbon dioxide.
Applications Claiming Priority (4)
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| KR10-2011-0076241 | 2011-07-29 | ||
| KR20110076241 | 2011-07-29 | ||
| KR1020110140015A KR101329304B1 (en) | 2011-07-29 | 2011-12-22 | Apparatus and method for treating substrate |
| KR10-2011-0140015 | 2011-12-22 |
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| CN103035551A true CN103035551A (en) | 2013-04-10 |
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| KR (1) | KR101329304B1 (en) |
| CN (1) | CN103035551B (en) |
| TW (1) | TWI483334B (en) |
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| CN110809820A (en) * | 2017-06-23 | 2020-02-18 | 应用材料公司 | Side storage compartment, equipment front end module and method for processing substrate |
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| CN112912999A (en) * | 2018-10-26 | 2021-06-04 | 应用材料公司 | High flow rate, gas purged side storage tank apparatus, assembly and method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101329304B1 (en) | 2013-11-14 |
| KR20130014311A (en) | 2013-02-07 |
| CN103035551B (en) | 2015-07-15 |
| TW201308499A (en) | 2013-02-16 |
| TWI483334B (en) | 2015-05-01 |
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