CN103035187B - 复合式显示装置 - Google Patents
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Abstract
本发明提供一种复合式显示装置，包括：基板，其中基板包括第一表面与第二表面；薄膜晶体管阵列层，形成于基板的第一表面上；第一显示装置，形成于薄膜晶体管阵列层之上；以及第二显示装置，形成于基板的第二表面上，其中基板的介电常数值(k)与基板的厚度(t)具有一对应关系，以通过薄膜晶体管阵列层主动驱动第一显示装置与第二显示装置，且基板的介电常数值(k)为约1-100，基板的厚度(t)为约0.1-60μm。
Description
技术领域
本发明是有关于一种显示装置，且特别是有关于一种共享一个薄膜晶体管(TFT)基板的复合式显示装置(hybrid display device)。
背景技术
随着科技的进步，各种的显示器已广泛地应用于许多电子产品中。当消费者想要播放静态图像与文字，可使用低耗电的电子纸(electronic paper)，若想要播放动态影像时，可选择具有高彩度与高反应速度的有机发光二极管显示器(OLED)，然而单一显示器并无法同时具有高彩度与低耗电的优点，因此整合两种显示装置的复合式显示装置(hybrid display device)开始受到研究的瞩目。
目前复合式显示装置是分别制作两个不同的显示装置，之后通过粘合剂将两个显示装置粘贴，然而两显示装置需要两个TFT以分别驱动显示装置，且分别具有两个基板，如此一来，复合式显示装置不但整体装置厚度提高，且制程的整合亦是另一个挑战。
若能提出一种复合式显示装置，其能共享一个TFT基板，并通过单一TFT基板达到双边主动驱动，此复合式显示装置不但可减少显示装置的厚度，亦可简化制程步骤与成本。
发明内容
本发明的目的在于提供一种复合式显示装置，其能共享一个TFT基板，并通过单一TFT基板达到双边主动驱动，此复合式显示装置不但可减少显示装置的厚度，亦可简化制程步骤与成本。
本发明提供一种复合式显示装置，包括：基板，其中该基板包括第一表面与一第二表面；薄膜晶体管阵列层(TFT array layer)，形成于该基板的第一表面上；第一显示装置，形成于该薄膜晶体管阵列层之上；以及第二显示装置，形成于该基板的第二表面上，其中该基板的介电常数值(k)与该基板的厚度(t)具有一对应关系，以通过该薄膜晶体管阵列层主动驱动该第一显示装置与该第二显示装置，且该基板的介电常数值(k)为约1-100，该基板的厚度(t)为约0.1-60μm。
本发明另提供一种复合式显示装置，包括：基板，其中该基板包括第一表面与一第二表面；薄膜晶体管阵列层，形成于该基板的第一表面上；第一显示装置，形成于该薄膜晶体管阵列层之上；以及第二显示装置，形成于该基板的第二表面上，其中该薄膜晶体管阵列层主动驱动该第一显示装置与该第二显示装置，且该第一显示装置为电流或电压驱动显示装置，该第二显示装置为电压驱动显示装置。
本发明所提供的复合式显示装置，可通过选择特定的基板介电常数值与基板厚度，以利用单一组薄膜晶体管阵列层主动驱动两个显示装置，如此一来，不但可减少复合式显示装置之整体厚度，且可简化制程步骤与成本。
为让本发明的特征能更明显易懂，下文特举出较佳实施例，并配合所附附图，作详细说明如下：
附图说明
图1为一剖面图，用以说明本发明的复合式显示装置；
图2为一剖面图，用以说明本发明的模拟显示装置；
图3A-3B为一系列剖面图，用以说明本发明的复合式显示装置的实施例；
图4A-4H为一系列剖面图，用以说明本发明的复合式显示装置制法的流程图；
图5为驱动电压、基板的介电常数值与基板的厚度的关系图，用以说明本发明的基板介电常数值与厚度的对应关系。
【主要组件符号说明】
100～复合式显示装置；
120～基板；
120a～基板的第一表面；
120b～基板的第二表面；
130～薄膜晶体管阵列层；
140～第一显示装置；
160～第二显示装置；
200～模拟显示装置；
210～承载基板；
215～第一电极；
220～基板；
240～显示装置；
245～第二电极；
300A、300B～复合式显示装置；
320～基板；
320a～第一表面；
320b～第二表面；
330～薄膜晶体管阵列层；
340a～顶部发射型有机发光二极管；
340b～底部发射型有机发光二极管；
341～光线；
345～封装材料；
350～粘着层；
360～电流体显示器(EFT)；
361～光线；
410～暂时基板；
411～离型层；
420～基板；
430～薄膜晶体管阵列层；
440～第一显示介质；
445～封装材料；
447～切割步骤；
460～第二显示装置。
具体实施方式
本发明提供一种复合式显示装置，此复合式显示装置中具有两个显示装置，且通过共享一组薄膜晶体管阵列层主动驱动两个显示装置。
请参见图1，复合式显示装置100包括：基板120，其中基板120包括第一表面120a与第二表面120b；于基板120第一表面120a之上依序形成薄膜晶体管阵列层(TFT array layer)130与第一显示装置140，于基板120第二表面120b之上形成第二显示装置160。
上述的第一显示装置140可为电流或电压驱动显示装置，而第二显示装置160可为电压驱动显示装置。电流驱动显示装置包括有机发光二极管(OrganicLight Emitting Device，OLED)或高分子发光二极管(Polymer Light EmittingDevice，PLED)。电压驱动显示装置包括液晶显示器(Liquid Crystal Display，LCD)、胆固醇液晶显示器(Cholesteric Liquid Crystal Display，Ch-LCD)或电流体显示器(Electro-Fluidics Display Technology，EFT)，其中电流体显示器包括电湿润显示器(Electrowetting Display，EWD)、电泳显示器(Electrophoretic Display，EPD)、电驱动显示装器(Electrokinetic Display，EKD)或快速反应液态粉状显示器(quick response liquid powder display)。
薄膜晶体管阵列层(TFT array layer)130中的薄膜晶体管结构可以是顶部闸极结构(top gate)或是底部闸极结构(bottom gate)。且薄膜晶体管可以是有机薄膜晶体管(Organic Thin Film Transistor，OTFT)、低温多晶硅晶体管(lowtemperature poly silicon TFTs)、金属氧化物晶体管(metal oxide TFTs)、非晶硅薄膜晶体管(amorphous silicon TFTs)、微晶硅薄膜晶体管(micro-crystal siliconTFTs)、多晶硅薄膜晶体管(polycrystalline silicon TFTs)、单晶硅薄膜晶体管(single crystal silicon TFTs)、氧化物晶体管(oxide TFTs)、有机薄膜晶体管(organic TFTs)等。
须注意的是，本发明仅用单一薄膜晶体管阵列层130主动驱动两个显示装置，由于第二显示装置160位于薄膜晶体管阵列层130的背侧，且中间隔着一层基板120的厚度，为避免跨压(cross voltage)过高所造成电力消耗与造成显示装置中组件的损害，本发明经由实验结果得知，基板120的介电常数值(k)与基板120的厚度(t)需具有一特定对应关系，此对应关系为当基板120的介电常数值(k)增加时，基板120的厚度(t)亦可随之增加，其中基板120的介电常数值(k)为约1-100，基板120的厚度(t)为约0.1-60μm。
图2显示本发明所使用的模拟显示装置200的剖面图，其中于承载基板210之上依序形成第一电极215、基板220、显示装置240与第二电极245，其中基板220由各种具有不同介电常数值(k)与厚度(t)的材料所组成，且通过量测第一电极215与第二电极245之间的电压(V)，得知具有不同介电常数值(k)与厚度(t)的基板220所需的驱动电压。
经过实验与统计分析，本发明的驱动电压、基板220的介电常数值(k)与基板220的厚度(t)具有下述关系：
驱动电压(伏特)＝1/(-0.0074+0.0523k-0.00808t)；
其中基板220的介电常数值(k)为约1-100，基板220的厚度为约0.1-60μm。
由实验数据得知，当基板220的介电常数值(k)越小时，则基板220的厚度要随之减小，才能以相同驱动电压驱动显示装置240。另言之，当基板220的介电常数值(k)越大时，则基板220厚度亦可随之增加。
表1显示本发明不同实施例的基板的介电常数值(k)与对应的厚度(t)。
表1
| 实施例 | 介电常数值(k) | 厚度(t) |
| 实施例1 | 1-5 | 约0.1-3.5μm |
| 实施例2 | 5-10 | 约0.1-14μm |
| 实施例3 | 10-15 | 约0.1-20μm |
| 实施例4 | 15-20 | 约0.1-25μm |
| 实施例5 | 20-30 | 约0.1-33μm |
| 实施例6 | 30-40 | 约0.1-45μm |
| 实施例7 | 40-50 | 约0.1-55μm |
| 实施例8 | 50-100 | 约0.1-60μm |
再者，请再次参见图1，本发明基板120的材料包括有机材料、无机材料或上述之混合。有机材料例如高分子、纳米高分子、热感压高分子，具体例子如聚偏二氟乙烯(Polyvinylidene Fluoride，PVDF)、聚亚酰胺(polyimide，PI)或包含上述的混合材料。
无机材料例如玻璃材料、陶瓷材料、纳米无机材料、金属材料，具体例子如硅氧化物(SixOy)、氮硅化物(SixNy)、氧化铝(Al2O3)、氧化钽(Ta2O5)、氧化钛(TiO2)或钛酸锶钡(BaxSr1-xTiO3，Barium Strontium Titanate，BST)。
除上述提及的材料外，亦可包括各种无机或有机材料混合而成的材料，且材料可以是半导体材料，可以是均匀混成或不均匀混成的材料，可以是透明、半透明或不透明，只要是符合本发明介电常数值(k)需求的材料，皆在本发明所保护的范围内。
图3A显示本发明第二实施例的复合式显示装置300A，其包括基板320，基板320包括第一表面320a与第二表面320b，于基板320的第一表面320a之上包括薄膜晶体管阵列层330，于薄膜晶体管阵列层330之上为顶部发射型有机发光二极管(Top emission Organic Light Emitting Diode，Top emissionOLED)340a。
于基板320的第二表面320b之上为电流体显示器(Electro-Fluidics displayTechnology，EFT)360，且介于基板320与电流体显示器(EFT)360之间的为粘着层350，用以粘合两者。
于此实施例中，观察者可位于基板320的第一表面320a之上，可观察到从顶部发射型有机发光二极管340a中发出光线341。此外，观察者亦可位于基板320的第二表面320b之上，可观察到从电流体显示器(EFT)360中反射出光线361。
于第二实施例中，观察者可位于基板320的第一表面320a，或可位于基板320的第二表面320b，可分别从不同的位置观察到复合式显示装置。
图3B显示本发明第三实施例的复合式显示装置300B，其包括基板320，基板320包括第一表面320a与第二表面320b，于基板320的第二表面320b之上包括薄膜晶体管阵列层330，于薄膜晶体管阵列层330之上为底部发射型有机发光二极管(Bottom emission Organic Light Emitting Diode，Bottomemission OLED)340b，于底部发射型有机发光二极管340b之上为封装材料345。
于基板320的第一表面320a之上为电流体显示器(Electro-Fluidics displayTechnology，EFT)360，且介于基板320与电流体显示器(EFT)360之间的为粘着层350，用以粘合两者。
于图3B中，观察者可位于基板320的第一表面320a上，可观察到从底部发射型有机发光二极管340b中发出光线341。此外，亦可观察到从电流体显示器(EFT)360中反射出光线361。此实施例的特征在于，当观察者于白天或具有充足光线的环境中时，薄膜晶体管阵列层330可驱动电流体显示器(EFT)360，以反射出光线361，当观察者于晚上或光线不足的环境中时，薄膜晶体管阵列层330可驱动底部发射型有机发光二极管340b，以发出光线341，因此，不论观察者所在的环境光线充足与否，此种复合式显示装置皆可使用。
本发明另提供一种复合式显示装置的制法，请参见图4A-4H，于图4A中，首先提供一暂时基板410，例如玻璃。之后，于暂时基板410之上形成离型层411。
请参见图4B，于离型层411之上形成基板420，此基板420为后续两个显示装置会共享的基板。基板420的形成方法例如涂布、蒸镀或溅镀等方式。
须注意的是，基板420的介电常数值(k)与基板420的厚度(t)具有一对应关系，以通过后续形成的薄膜晶体管阵列层430主动驱动两个显示装置，且基板420的介电常数值(k)为约1-100，基板420的厚度为约0.1-60μm。
请参见图4C，于基板420之上形成薄膜晶体管阵列层430，此薄膜晶体管阵列层430后续要主动驱动两个显示装置。
请参见图4D，于薄膜晶体管阵列层430之上形成第一显示介质440，第一显示介质为电流驱动或电压驱动的显示介质。于一实施例中，第一显示介质为有机发光二极管(Organic Light Emitting Device，OLED)，其包括电子注入层、电子传输层、发光层、空穴传输层、空穴输入层等。
请参见图4E，形成封装材料445于暂时基板410之上并覆盖第一显示介质440，用以保护第一显示介质440，之后，以小于离型层411的尺寸进行一切割步骤447，并移除多余的基板420与封装材料445。封装材料445需完全覆盖薄膜晶体管阵列层430与显示介质440，以达到阻水气的功能。此外，封装材料445的尺寸与离型层411或切割步骤447的尺寸无一定大小关系。
请参见图4F，移除暂时基板410，以暴露出离型层411与基板420。
请参见图4G，将第二显示装置460贴合于暴露的离型层411与暴露的基板420之上，第二显示装置460为电压驱动显示装置。于一实施例中，第二显示装置460例如电泳显示器(Electrophoretic Display，EPD)。
图4H显示本发明的复合式显示装置的示意图，由图中可观察到，单一薄膜晶体管阵列层430主动驱动第一显示介质440与第二显示装置460。
综上所述，本发明所提供的复合式显示装置，可通过选择特定的基板介电常数值与基板厚度，以利用单一组薄膜晶体管阵列层主动驱动两个显示装置，如此一来，不但可减少复合式显示装置的整体厚度，且可简化制程步骤与成本。
【实施例】
请再次参见图2，承载基板210可使用玻璃，第一电极215与第二电极245可使用透明的氧化铟锡玻璃(Indium Tin Oxide glass，ITO glass)，显示装置240可使用电泳显示器(Electrophoretic Display，EPD)，基板220使用介电常数值(k)为3.3、4.3、5.1、5.33、5.88、6.03、6.19、6.45、6.94、7等具有不同厚度的材料。
图5显示驱动电压、基板220的介电常数值与基板220的厚度的关系图，由图中可知，当基板220的介电常数值越大时，可适用的基板220的厚度可随之提升。
虽然本发明已以数个较佳实施例说明如上，然其并非用以限定本发明，任何所属技术领域中具有通常知识者，在不脱离本发明的精神和范围内，当可作任意的更动与润饰，因此本发明的保护范围当视所附的权利要求书所界的范围定为准。
Claims (17)
1.一种复合式显示装置，其特征在于，包括：
基板，其中该基板包括第一表面与第二表面；
薄膜晶体管阵列层，形成于该基板的第一表面上；
第一显示装置，形成于该薄膜晶体管阵列层之上；以及
第二显示装置，形成于该基板的第二表面上，其中该基板的介电常数值(k)与该基板的厚度(t)具有一对应关系，以通过该薄膜晶体管阵列层主动驱动该第一显示装置与该第二显示装置，且该基板的介电常数值(k)为1-100，该基板的厚度(t)为0.1-60μm，其中该对应关系为该基板的介电常数值(k)增加时，该基板的厚度(t)亦可随之增加。
2.根据权利要求1所述的复合式显示装置，其特征在于，该基板的介电常数值(k)为1-5，且该基板的厚度为0.1-3.5μm。
3.根据权利要求1所述的复合式显示装置，其特征在于，该基板的介电常数值(k)为5-10，且该基板的厚度为0.1-14μm。
4.根据权利要求1所述的复合式显示装置，其特征在于，该基板的介电常数值(k)为10-15，且该基板的厚度为0.1-20μm。
5.根据权利要求1所述的复合式显示装置，其特征在于，该基板的介电常数值(k)为15-20，且该基板的厚度为0.1-25μm。
6.根据权利要求1所述的复合式显示装置，其特征在于，该基板的介电常数值(k)为20-30，且该基板的厚度为0.1-33μm。
7.根据权利要求1所述的复合式显示装置，其特征在于，该基板的介电常数值(k)为30-40，且该基板的厚度为0.1-45μm。
8.根据权利要求1所述的复合式显示装置，其特征在于，该基板的介电常数值(k)为40-50，且该基板的厚度为0.1-55μm。
9.根据权利要求1所述的复合式显示装置，其特征在于，该基板的介电常数值(k)为50-100，且该基板的厚度为0.1-60μm。
10.根据权利要求1所述的复合式显示装置，其特征在于，该第一显示装置为电流或电压驱动显示装置，且该第二显示装置为电压驱动显示装置。
11.根据权利要求1所述的复合式显示装置，其特征在于，该基板的材料包括有机材料、无机材料或上述的组合。
12.一种复合式显示装置，其特征在于，包括：
基板，其中该基板包括第一表面与一第二表面；
薄膜晶体管阵列层，形成于该基板的第一表面上；
第一显示装置，形成于该薄膜晶体管阵列层之上；以及
第二显示装置，形成于该基板的第二表面上，其中该薄膜晶体管阵列层主动驱动该第一显示装置与该第二显示装置，且该第一显示装置为电流或电压驱动显示装置，该第二显示装置为电压驱动显示装置，其中该基板的介电常数值(k)与该基板的厚度(t)具有一对应关系，且该对应关系为该基板的介电常数值(k)增加时，该基板的厚度(t)亦可随之增加。
13.根据权利要求12所述的复合式显示装置，其特征在于，该电流驱动显示装置包括有机发光二极管。
14.根据权利要求13所述的复合式显示装置，其特征在于，该有机发光二极管包括高分子发光二极管。
15.根据权利要求12所述的复合式显示装置，其特征在于，该电压驱动显示装置包括液晶显示器、电湿润显示器、电泳显示器、电驱动显示装器或快速反应液态粉状显示器。
16.根据权利要求15所述的复合式显示装置，其特征在于，该液晶显示器包括胆固醇液晶显示器。
17.根据权利要求12所述的复合式显示装置，其特征在于，该基板的材料包括有机材料、无机材料或上述的组合。
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| TWI476739B (zh) * | 2013-09-25 | 2015-03-11 | Au Optronics Corp | 顯示模組 |
| CN103824876A (zh) * | 2014-02-12 | 2014-05-28 | 京东方科技集团股份有限公司 | 一种三维显示面板、其制作方法及三维显示装置 |
| JP2016038490A (ja) * | 2014-08-08 | 2016-03-22 | 株式会社半導体エネルギー研究所 | 表示パネル、表示モジュール、及び電子機器 |
| CN105068341B (zh) * | 2015-07-17 | 2018-01-16 | 昆山工研院新型平板显示技术中心有限公司 | 双显示屏显示装置及其显示方法 |
| CN110456588B (zh) * | 2018-05-04 | 2023-01-03 | 元太科技工业股份有限公司 | 电泳显示装置 |
| TWI677743B (zh) | 2018-05-04 | 2019-11-21 | 元太科技工業股份有限公司 | 電泳顯示裝置 |
| CN116609974A (zh) * | 2023-05-31 | 2023-08-18 | 重庆惠科金渝光电科技有限公司 | 背光源组件、双面显示模组以及双面显示装置 |
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| JP2010078898A (ja) * | 2008-09-26 | 2010-04-08 | Hitachi Displays Ltd | 表示装置 |
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2011
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2012
- 2012-05-29 US US13/482,982 patent/US20130087815A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1871537A (zh) * | 2003-10-24 | 2006-11-29 | 伊英克公司 | 电光显示器 |
| CN101025482A (zh) * | 2006-02-21 | 2007-08-29 | 财团法人工业技术研究院 | 复合型显示器 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103035187A (zh) | 2013-04-10 |
| US20130087815A1 (en) | 2013-04-11 |
| TWI449006B (zh) | 2014-08-11 |
| TW201316304A (zh) | 2013-04-16 |
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