CN103033734B - Method for measuring graphene carrier mobility based on non-contact Hall effect - Google Patents
Method for measuring graphene carrier mobility based on non-contact Hall effect Download PDFInfo
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- CN103033734B CN103033734B CN201210593927.1A CN201210593927A CN103033734B CN 103033734 B CN103033734 B CN 103033734B CN 201210593927 A CN201210593927 A CN 201210593927A CN 103033734 B CN103033734 B CN 103033734B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000005355 Hall effect Effects 0.000 title claims abstract description 14
- 230000037230 mobility Effects 0.000 claims abstract description 67
- 238000005259 measurement Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 238000012360 testing method Methods 0.000 claims description 19
- 230000006698 induction Effects 0.000 claims description 13
- 230000005284 excitation Effects 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 3
- 239000000523 sample Substances 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 3
- 230000004447 accommodation reflex Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Abstract
The invention belongs to the technical field of semiconductors, and provides a method for measuring graphene carrier mobility based on a non-contact Hall effect. Induced current and Hall current are guided in graphene by adopting an incident electromagnetic wave exciting mode; electromagnetic wave radiated by the Hall current is measured, and is compared with incident electromagnetic wave to obtain the mobility of the graphene; the projection position of excited electromagnetic wave is changed to implement multi-point measurement; and the mobilities of the graphene in different positions are compared to obtain whether the graphene has excellent consistence. The method adopts the non-contact electromagnetic wave to measure the graphene mobility, so that the time spent in measuring the graphene mobility is saved, the influence on properties of the graphene from the traditional method for producing metal probes is avoided, and whether a large amount of prepared graphene has excellent consistence can be judged; and the method has strong practicability and stronger promotion and application benefits.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to the method measuring graphene carrier mobility based on contactless Hall effect.
Background technology
Grapheme material is a kind of carbon back two dimensional crystal, and be known the thinnest the lightest material at present, individual layer only atomic thickness, it has extremely excellent physicochemical property, and (theory is estimated to exceed 200000cm to such as high carrier mobility
2v
-1s
-1, be hundreds of times of Si), superpower mechanical property (Young modulus is about 1000GP), high specific surface area and fabulous gas-sensitive property, the high transparency and pliability, and also there is not mismatch problems in it and substrate, can be completely compatible with Si base device technique, there is outstanding industrial advantage.Therefore, Graphene appear as industrial community and scientific and technological circle bring dawn, it is the new material that the alternative Si be expected most becomes base semiconductor material of future generation.
In order to improve consistance prepared by Graphene, usually need to test the mobility of Graphene after preparation terminates, conventional vanderburg method principle is simple, be applicable to measure arbitrary shape sample (require that material is approximate two-dimensional material, namely thickness is much smaller than Length x Width) measuring error in theory little.But because needs make Ohmic contact, metal solder joint, make grapheme material be broken ring, be difficult to carry out other tests.And due to single-layer graphene thickness too thin, doped graphene preparation is difficult to obtain good consistance, grapheme material differs greatly with the work function between metal material, be not easy to make good Ohmic contact, adding Graphene top electrode makes expensive, makes vanderburg method and is not suitable for characterizing Graphene.So, in order to characterize Graphene efficiently, judging whether prepare Graphene in a large number has good consistance, proposing and adopt eyes with non-contact method to measure mobility.
Summary of the invention
The invention provides the method measuring graphene carrier mobility based on contactless Hall effect, be intended to the method solving the test Graphene mobility that prior art provides, make grapheme material be broken ring, be difficult to carry out other tests, testing cost is higher simultaneously, the problem of complicated operation.
The object of the present invention is to provide the method measuring graphene carrier mobility based on contactless Hall effect, the mode that the method adopts incident electromagnetic wave to excite, induction current and Hall current is introduced in Graphene, by measuring the electromagnetic wave that Hall current gives off, and compared with incident electromagnetic wave, draw the mobility of Graphene, then change excites electromagnetic launching position, carries out multimetering.
Further, the specific implementation step of the method is as follows:
Step one, is placed on copper coin sheet on objective table, aims at electromagnetic wave transmitter, utilizes testing apparatus automatically to read the reflected energy of copper sheet, and the reflected energy adjustment device parameter obtained;
Step 2, is placed on the Graphene transferred on substrate on objective table, selects built-in response test substrate;
Step 3, apply inversion signal to balanced bridge circuit, manual adjustments detector, makes the Hall value detected reach minimum;
Step 4, under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be used for the measurement of mobility;
Step 5, keeps magnetic induction density at 5000-10000G, measures the Hall energy of Graphene Hall excitation current radiation, and calculates Graphene mobility thus;
Step 6, moving substrate, measures other position Graphene mobilities.
Further, in step one, the copper coin sheet resistance values measured by reflected energy is not more than 10ohms.
Further, in step 2, use substrate must be not less than 2 inches.
Further, in step 6, by comparing diverse location Graphene mobility, Graphene can be obtained whether there is good consistance.
The method measuring graphene carrier mobility based on contactless Hall effect provided by the invention, adopt the mode that incident electromagnetic wave excites, induction current and Hall current is introduced in Graphene, by measuring the electromagnetic wave that Hall current gives off, and compared with incident electromagnetic wave, draw the mobility of Graphene, change again and excite electromagnetic launching position, carry out multimetering, and by comparing diverse location Graphene mobility, Graphene can be obtained whether there is good consistance, the method adopts contactless electromagnetic wave measurement Graphene mobility, save the time of measuring Graphene mobility, avoid classic method and make metal probe to the impact of Graphene character, can judge whether prepare Graphene in a large number has good consistance, practical, there is stronger propagation and employment be worth.
Accompanying drawing explanation
Fig. 1 is the realization flow figure measuring the method for graphene carrier mobility based on contactless Hall effect that the embodiment of the present invention provides;
Fig. 2 is the principle schematic measuring the method for graphene carrier mobility based on contactless Hall effect that the embodiment of the present invention provides.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is described in further detail.Should be appreciated that specific embodiment described herein only in order to explain the present invention, and be not used in restriction invention.
The object of the present invention is to provide the method measuring graphene carrier mobility based on contactless Hall effect, the mode that the method adopts incident electromagnetic wave to excite, induction current and Hall current is introduced in Graphene, by measuring the electromagnetic wave that Hall current gives off, and compared with incident electromagnetic wave, draw the mobility of Graphene, then change excites electromagnetic launching position, carries out multimetering.
Fig. 1 shows the realization flow measuring the method for graphene carrier mobility based on contactless Hall effect that the embodiment of the present invention provides.
As shown in Figure 1, in embodiments of the present invention, the specific implementation step of the method is as follows:
Step one, is placed on copper coin sheet on objective table, aims at electromagnetic wave transmitter, utilizes testing apparatus automatically to read the reflected energy of copper sheet, and the reflected energy adjustment device parameter obtained;
Step 2, is placed on the Graphene transferred on substrate on objective table, selects built-in response test substrate;
Step 3, apply inversion signal to balanced bridge circuit, manual adjustments detector, makes the Hall value detected reach minimum;
Step 4, under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be used for the measurement of mobility;
Step 5, keeps magnetic induction density at 5000-10000G, measures the Hall energy of Graphene Hall excitation current radiation, and calculates Graphene mobility thus;
Step 6, moving substrate, measures other position Graphene mobilities.
In embodiments of the present invention, in step one, the copper coin sheet resistance values measured by reflected energy is not more than 10ohms.
In embodiments of the present invention, in step 2, use substrate must be not less than 2 inches.
In embodiments of the present invention, in step 6, by comparing diverse location Graphene mobility, Graphene can be obtained whether there is good consistance.
Below in conjunction with drawings and the specific embodiments, application principle of the present invention is further described.
The object of the invention is to the deficiency overcoming contact type measurement, a kind of contactless mobility measuring method based on electromagnetic wave excites is provided, can probe be exempted, measure Graphene mobility easily.The advantage of its multimetering in addition, can be used for characterizing the homogeneity of Graphene.
Realizing the object of the invention key problem in technology is: the mode adopting incident electromagnetic wave to excite, and introduces induction current and Hall current in Graphene, by measuring the electromagnetic wave that Hall current gives off, and compared with incident electromagnetic wave, draws the mobility of Graphene.Change and excite electromagnetic launching position, carry out multimetering.Implementation step comprises as follows:
(1) copper coin sheet is placed on objective table, aim at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, adjusts device parameter with this, the energy hunting that may occur in compensating test process.The copper coin sheet resistance values measured by reflected energy is not more than 10ohms;
(2) Graphene transferred on substrate is placed on objective table, selects the corresponding test substrate that software is built-in, use substrate must be not less than 2 inches;
(3) system applies inversion signal to balanced bridge circuit, manual adjustments detector, makes the Hall value detected reach minimum, offsets noise as much as possible;
(4) under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be used for the measurement of mobility;
(5) keep magnetic induction density at 5000-10000G, measure the Hall energy of Graphene Hall excitation current radiation, calculate Graphene mobility thus;
(6) moving substrate, measures other position Graphene mobilities, and diverse location compares whether obtain material even.
Measure Graphene mobility with said method it is characterized in that: the measurement of mobility does not need to use metal probe contact, is convenient for measuring the mobility of material diverse location.
Tool of the present invention has the following advantages:
1., owing to adopting contactless electromagnetic wave measurement Graphene mobility, eliminate probe manufacturing, avoid material damage.
2. owing to adopting contactless electromagnetic wave measurement Graphene mobility, the mobility of diverse location can be measured easily, characterize Graphene and prepare homogeneity.
With reference to Fig. 1, the present invention provides following embodiment:
Embodiment 1:
Performing step of the present invention is as follows:
Step 1, utilizes copper coin sheet to adjust device parameter.
Copper coin sheet is placed on objective table, and aim at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, and the copper coin sheet resistance values measured by reflected energy is not more than 10ohms.
Step 2, accommodation reflex Hall value.
Graphene is transferred on 4 inches of Si substrates, is placed on objective table, aim at electromagnetic wave transmitter, adjustment reflection Hall value is to minimum.
Step 3, measures Graphene surface resistance and carrier concentration.
Under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration.
Step 4, measures Graphene mobility.
Keep magnetic induction density at 5000G, measure the Hall energy of Graphene Hall excitation current radiation, system calculates Graphene mobility automatically.
Step 5, moving substrate, measures other position mobilities.
Embodiment 2:
Performing step of the present invention is as follows:
Steps A, utilizes copper coin sheet to adjust device parameter.
Copper coin sheet is placed on objective table, and aim at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, and the copper coin sheet resistance values measured by reflected energy is not more than 10ohms.
Step B, accommodation reflex Hall value.
Graphene is transferred to 3 inches of SiO
2on substrate, be placed on objective table, aim at electromagnetic wave transmitter, adjustment reflection Hall value is to minimum.
Step C, measures Graphene surface resistance and carrier concentration.
Under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration.
Step D, measures Graphene mobility.
Keep magnetic induction density at 7000G, measure the Hall energy of Graphene Hall excitation current radiation, system calculates Graphene mobility automatically.
Step e, moving substrate, measures other position mobilities.
Embodiment 3:
Performing step of the present invention is as follows:
Step 1, utilizes copper coin sheet to adjust device parameter.
Copper coin sheet is placed on objective table, and aim at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, and the copper coin sheet resistance values measured by reflected energy is not more than 10ohms.
Step 2, accommodation reflex Hall value.
Graphene is transferred in 2 inches of GaN substrate, is placed on objective table, aim at electromagnetic wave transmitter, adjustment reflection Hall value is to minimum.
Step 3, measures Graphene surface resistance and carrier concentration.
Under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration.
Step 4, measures Graphene mobility.
Keep magnetic induction density at 10000G, measure the Hall energy of Graphene Hall excitation current radiation, system calculates Graphene mobility automatically.
Step 5, moving substrate, measures other position mobilities.
The invention discloses a kind of graphene carrier mobility measuring method based on contactless Hall effect, mainly solve the problem of non-cpntact measurement Graphene mobility.Its measuring process is: (1) is placed on Cu disk on objective table, and aim at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, adjusts device parameter with this, the energy hunting that may occur in compensating test process.The Cu disk resistance value measured by reflected energy is not more than 10ohms; (2) Graphene transferred on substrate is placed on objective table, selects the corresponding test substrate that software is built-in, use substrate must be not less than 2 inches; (3) system applies inversion signal to balanced bridge circuit, manual adjustments detector, makes the Hall value detected reach minimum, offsets noise as much as possible; (4) under 0 magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be used for the measurement of mobility; (5) keep magnetic induction density at 100-1000G, measure the Hall energy of Graphene Hall excitation current radiation, calculate Graphene mobility thus; (6) moving substrate, measures other position Graphene mobilities, and diverse location compares whether obtain material even.Present invention saves the time of measuring Graphene mobility, avoid and make metal probe to the impact of Graphene character.
The method measuring graphene carrier mobility based on contactless Hall effect that the embodiment of the present invention provides, adopt the mode that incident electromagnetic wave excites, induction current and Hall current is introduced in Graphene, by measuring the electromagnetic wave that Hall current gives off, and compared with incident electromagnetic wave, draw the mobility of Graphene, change again and excite electromagnetic launching position, carry out multimetering, and by comparing diverse location Graphene mobility, Graphene can be obtained whether there is good consistance, the method adopts contactless electromagnetic wave measurement Graphene mobility, save the time of measuring Graphene mobility, avoid classic method and make metal probe to the impact of Graphene character, can judge whether prepare Graphene in a large number has good consistance, practical, there is stronger propagation and employment be worth.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. the method for graphene carrier mobility is measured based on contactless Hall effect, it is characterized in that, the mode that the method adopts incident electromagnetic wave to excite, induction current and Hall current is introduced in Graphene, by measuring the electromagnetic wave that Hall current gives off, and compared with incident electromagnetic wave, draw the mobility of Graphene, change again and excite electromagnetic launching position, carry out multimetering;
The specific implementation step of the method is as follows:
Step one, is placed on copper coin sheet on objective table, aims at electromagnetic wave transmitter, utilizes testing apparatus automatically to read the reflected energy of copper sheet, and the reflected energy adjustment device parameter obtained;
Step 2, is placed on the Graphene transferred on substrate on objective table, selects built-in response test substrate;
Step 3, apply inversion signal to balanced bridge circuit, manual adjustments detector, makes the Hall value detected reach minimum;
Step 4, under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be used for the measurement of mobility;
Step 5, keeps magnetic induction density at 5000-10000G, measures the Hall energy of Graphene Hall excitation current radiation, and calculates Graphene mobility thus;
Step 6, moving substrate, measures other position Graphene mobilities;
In step one, the copper coin sheet resistance values measured by reflected energy is not more than 10ohms;
In step 2, use substrate must be not less than 2 inches;
In step 6, by comparing diverse location Graphene mobility, Graphene can be obtained whether there is good consistance.
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| CN107037284B (en) * | 2017-03-29 | 2019-04-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Measurement is using semiconductor as the method for the graphene microcell mobility of substrate |
| US11041827B2 (en) * | 2019-04-12 | 2021-06-22 | International Business Machines Corporation | Carrier-resolved photo-hall system and method |
| CN111983532A (en) * | 2020-07-30 | 2020-11-24 | 南昌工程学院 | Electromagnetic testing system and testing device for graphene device |
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| JPS59178739A (en) * | 1983-03-30 | 1984-10-11 | Hitachi Ltd | Device for measuring carrier mobility |
| SU1465750A1 (en) * | 1987-05-27 | 1989-03-15 | Войсковая часть 67947 | Method of measuring concentration and mobility of current carriers in semiconductors |
| CN1531656A (en) * | 2001-05-03 | 2004-09-22 | �պ��ٵ��ӹ�˾ | Method and apapratus for nondestructive measurement and mapping of sheet materials |
| CN1971295A (en) * | 2005-11-21 | 2007-05-30 | 杨瑞霞 | A novel method for measuring current carrier mobility of magnetic semiconductor |
| CN101740434A (en) * | 2008-11-21 | 2010-06-16 | 索尼株式会社 | Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer |
| CN102313835A (en) * | 2011-07-21 | 2012-01-11 | 河北工业大学 | Method for measuring electric parameter of gallium arsenide pseudomorphic HEMT (high electron mobility transistor) material |
-
2012
- 2012-12-31 CN CN201210593927.1A patent/CN103033734B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59178739A (en) * | 1983-03-30 | 1984-10-11 | Hitachi Ltd | Device for measuring carrier mobility |
| SU1465750A1 (en) * | 1987-05-27 | 1989-03-15 | Войсковая часть 67947 | Method of measuring concentration and mobility of current carriers in semiconductors |
| CN1531656A (en) * | 2001-05-03 | 2004-09-22 | �պ��ٵ��ӹ�˾ | Method and apapratus for nondestructive measurement and mapping of sheet materials |
| CN1971295A (en) * | 2005-11-21 | 2007-05-30 | 杨瑞霞 | A novel method for measuring current carrier mobility of magnetic semiconductor |
| CN101740434A (en) * | 2008-11-21 | 2010-06-16 | 索尼株式会社 | Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer |
| CN102313835A (en) * | 2011-07-21 | 2012-01-11 | 河北工业大学 | Method for measuring electric parameter of gallium arsenide pseudomorphic HEMT (high electron mobility transistor) material |
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