CN105527243A - Method for measuring conductivity of graphene film based on terahertz time-domain spectroscopy - Google Patents
Method for measuring conductivity of graphene film based on terahertz time-domain spectroscopy Download PDFInfo
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- CN105527243A CN105527243A CN201510855575.6A CN201510855575A CN105527243A CN 105527243 A CN105527243 A CN 105527243A CN 201510855575 A CN201510855575 A CN 201510855575A CN 105527243 A CN105527243 A CN 105527243A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000005259 measurement Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 230000003595 spectral effect Effects 0.000 claims abstract description 5
- 238000001228 spectrum Methods 0.000 claims description 25
- 239000000523 sample Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 8
- 238000007791 dehumidification Methods 0.000 claims description 4
- 238000009795 derivation Methods 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- 238000010835 comparative analysis Methods 0.000 claims description 2
- 230000003252 repetitive effect Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000010205 computational analysis Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
Abstract
The invention relates to a method for measuring the conductivity of a graphene film based on terahertz time-domain spectroscopy, belonging to the field of application of terahertz time-domain spectroscopic detection technology. The method comprises the following steps: S1, adjusting and acquiring a terahertz time-domain spectroscopic system optical path applicable to measurement of the film; S2, measuring and acquiring the terahertz time-domain spectral signal of a substrate material; S3, measuring and acquiring the terahertz time-domain spectral signal of the substrate material with a transferred graphene film; S4, calculating the conductivity of the graphene film in a terahertz wave band by using a formula according to the signals acquired in the steps S2 and S3; and S5, establishing a standard relation curve between the conductivity obtained by using the terahertz time-domain spectroscopy and conductivity obtained by using a traditional fourpoint method, acquiring a correlation factor and acquiring the conductivity of graphene in a visible light band according to the correlation factor. The method is applicable to detection of graphene transferred onto a semiconductor or high-molecular substrate and can be promoted to detection of the conductivity of other semiconductor films.
Description
Technical field
The invention belongs to tera-hertz spectra detection technique application, relate to a kind of method based on tera-hertz spectra commercial measurement graphene film conductance.
Background technology
Graphene forms with sp2 hybrid orbital the two-dimensional film material that hexangle type is honeycomb lattice by carbon atom, has high mechanical properties, high light transmittance, high-termal conductivity, high conductivity.In monoatomic layer graphene-structured, each carbon atom is sp2 hydridization, can contribute the p orbital electron of a non-Cheng Jian, defines the large π key of delocalization.These electronics can move freely on the graphene planes of almost Perfect, therefore impart and make the good electric conductivity of Graphene, and its Theory Conductivity is 10
6s/m is the material that the current electric conductivity found is the most excellent.The high conductance of Graphene is one of most critical factor of applying at electronic applications of grapheme material.But experimentally due to the Graphene existing defects of preparation, its actual conductance is more much lower than theoretical value, and, due to the difference of preparation method, cause the conductance of graphene film to there is very big-difference.Therefore, Accurate Measurement Graphene conductance has very strong actual application value.The method of measurement Graphene conductance comparatively conventional is at present mainly four point probe resistance measurement method, there is complex operation, speed is lower and contact damage may be brought to material, therefore set up a kind of contactless, fast and accurately detection method be at present in the urgent need to.
Tera-hertz spectra is that a kind of frequency is at 0.1 ~ 10.0THz, wavelength at the wide detection of 30um ~ 3mm application and imaging technique, have noncontact, imaging rate fast, comprise time domain and phase information, optical path is adjustable features such as (transmission, reflective-modes).Because the phonon vibration energy level of graphene film material drops on THz wavelength band, tera-hertz spectra can be used for the calculating of graphene film material carrier mobility, conductance.The know-why that terahertz time-domain spectroscopic technology measures graphene film conductance is based on fresnel formula and Tinkham film homology equation, derive and obtain graphene film conductance and can be expressed as THz wave and be conveyed through transfer respectively and have the base material of graphene film and the function without the ratio of the transmission signal of the base material of graphene film and the specific inductive capacity of base material, and THz wave be conveyed through respectively transfer have the base material of Graphene and can be measured by terahertz time-domain spectroscopy without the transmission signal of the base material of Graphene and obtain through Fourier transform, thus the conductance of Graphene in Terahertz frequency range can be calculated.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of method based on tera-hertz spectra commercial measurement graphene film conductance, the method is applicable to, to transferring to semiconductor or the suprabasil Graphene of macromolecule detects, being also applicable to the detection being generalized to other semiconductor film membrane conductances simultaneously.
For achieving the above object, the invention provides following technical scheme:
Based on a method for tera-hertz spectra commercial measurement graphene film conductance, comprise the following steps:
S1: regulate the terahertz time-domain spectroscopy system light path obtaining and be adapted to measure film;
S2: measure the terahertz time-domain spectroscopic signal obtaining base material;
S3: the terahertz time-domain spectroscopic signal of base material after measurement acquisition transfer graphene film;
S4: the signal gathered according to step S2 and S3, utilizes formulae discovery terahertz wave band Graphene conductance;
S5: set up standard relationship curve between the conductance obtained by terahertz light spectral technology and the conductance adopting traditional four-point probe methods to obtain, obtains association factor; According to association factor, obtain in visible light wave range Graphene conductance.
Further, in step sl, described adjustment light path comprises the collimation of Terahertz measuring system light path, the determination of focus.
Further, described step S2 and S3 carries out under room temperature environment, and air is made dehumidification treatments or do not made dehumidification treatments; The terahertz time-domain spectroscopy signal obtained in described step S2 and S3 comprises multiecho pulse signal.
Further, in step s 2, described base material requires to have good THz wave transmitance, includes but not limited to High Resistivity Si.
Further, in step s3, after described transfer graphene film, base material comprises graphene film layer and adds substrate material layer.
Further, the formula in step S4 is derived based on fresnel formula and Tinkham film homology equation and is obtained; The thin layer conductance computing formula of being derived by echo each on terahertz time-domain spectroscopy has difference, as follows according to the first echo derivation formula:
Wherein n
a=n
si+ 1, n
si=3.42, n
sishow the refractive index of silicon; Z
0=377 Ω are the vacuum electric impedance of silicon;
represent the transport function of film, E
out, 1, G(ω) and E
out, 1, Si(ω) the THz wave energy intensity value with obtaining at the graphene-based end and the time domain wave spectrum Fourier transform without an echo acquisition of graphene-based bottom part is represented respectively;
As follows by the second echo derivation formula:
Wherein n
a=n
si+ 1, nB=n
si-1, n
si=3.42, Z
0=377 Ω,
e
out, 2, G(ω) and E
out, 2, Si(ω) represent respectively with the graphene-based end with without the THz wave energy intensity value obtained after the time domain wave spectrum Fourier transform obtained by second trip echo of graphene-based bottom part.
Further, in step S5, association factor is by tera-hertz spectra technology law and four probe method repetitive measurement comparative analysis gained, the substrate formed same material and film, and association factor only need be determined once, once acquisition association factor, this method only need comprise S1 ~ S4 tetra-steps.
Beneficial effect of the present invention is: the present invention utilizes terahertz time-domain spectroscopy system to obtain the terahertz time-domain spectroscopy information of graphene film and substrate, utilizes formula to pass through to calculate its conductance of acquisition.Especially, according to the conductance of all pickup area of the complete sample of formulae discovery, the quality of Graphene can be judged according to conductance distribution plan.The present invention specifically has greater significance to realizing graphene film Non-Destructive Testing.
Accompanying drawing explanation
In order to make object of the present invention, technical scheme and beneficial effect clearly, the invention provides following accompanying drawing and being described:
Fig. 1 is terahertz time-domain spectroscopy test macro schematic diagram;
Fig. 2 is the terahertz time-domain spectroscopy that silicon base and transfer have graphene film substrate;
Fig. 3 is the conductance of the graphene film calculated in embodiment.
Embodiment
The graphene film layer that this patent is claimed is used to explain and the present invention is described, instead of limit the invention, detection method based on terahertz time-domain spectroscopy is not only confined to Graphene, can be also other semiconductor film layers, only requires that the thickness of thin layer is much smaller than base layer thickness.
The method of the invention comprises the following steps: S1: regulate the terahertz time-domain spectroscopy system light path obtaining and be adapted to measure film; S2: measure the terahertz time-domain spectroscopic signal obtaining base material; S3: the material terahertz time-domain spectroscopic signal of substrate after measurement acquisition transfer graphene film; S4: the signal gathered according to S2 and S3, utilizes formulae discovery terahertz wave band Graphene conductance; S5: set up standard relationship curve between the conductance obtained by terahertz light spectral technology and the conductance adopting traditional four-point probe methods to obtain, obtains association factor; According to association factor, obtain in visible light wave range Graphene conductance.
The Terahertz direction of propagation in above-mentioned steps S1 is vertical with sample direction, and sample is positioned at THz wave and propagates in the focus of light path; The time-domain spectroscopy signal obtained in above-mentioned steps S2 and S3 measures acquisition under room temperature non-dry air conditions; Time-domain spectroscopy signal at least comprises and in silicon base, does not carry out in silicon base internal reflection (the first echo) with due to THz wave the signal that two secondary reflections produce (the second echo).
The first echo and the second echo pulse signal in time-domain signal is selected to carry out ensuing computational analysis in step S4 respectively.The time-domain signal of intercepting is carried out Fourier's change, extracts THz wave energy information, and the conductance of the information calculation sample such as refractive index in conjunction with known silicon, the formula being undertaken calculating by the first echo is as follows:
Wherein n
a=n
si+ 1, n
si=3.42, n
sirepresent the refractive index of silicon; Z
0=377 Ω are the vacuum electric impedance of silicon;
represent the transport function of film, E
out, 1, G(ω) and E
out, 1, Si(ω) the THz wave energy intensity value with obtaining at the graphene-based end and the time domain wave spectrum Fourier transform without an echo acquisition of graphene-based bottom part is represented respectively.The formula being undertaken calculating by the second echo is as follows:
Wherein n
a=n
si+ 1, n
b=n
si-1, n
si=3.42, Z
0=377 Ω,
e
out, 2, G(ω) and E
out, 2, Si(ω) respectively representative with Graphene and only have silicon base part the time domain wave spectrum Fourier transform obtained by two secondary reflections after the THz wave energy intensity value that obtains.
In step S5, because Graphene conductance has frequency dependence, the conductance that terahertz time-domain spectroscopic technology is measured is the conductance in Terahertz frequency range, and general experimentally said conductance refers to the conductance at visible light frequency band.For the measured value will obtained by terahertz time-domain spectroscopic technology is corresponding with experiment value, tera-hertz spectra commercial measurement and the four-point probe methods that need carry out repeatedly Graphene conductance are measured, by corresponding in x-y coordinate axis for the conductance data obtained by two kinds of methods each time, obtain standard relationship curve between the two, determine association factor; According to association factor, obtain in visible light wave range Graphene conductance.The substrate formed same material and film, association factor only need be determined once, once obtain association factor, S5 step can be saved.
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, the terahertz light spectrum imaging system described in the present embodiment comprises: THz source, detector, sample holder and main control computer etc.Sample is fixed on support, and adopt transmission mode, scanning samples in the air atmosphere of room temperature non-dry also obtains terahertz time-domain wave spectrum, and black is basal signal, and grey is the signal with graphene film substrate, as shown in Figure 2.
The signal representing an echo and second trip echo in the terahertz time-domain signal of extraction is carried out Fourier's change respectively, subsequently, changes the data obtained according to Fourier, come utilize formula by an echo change
calculate, obtaining graphene film conductance is 2.81 ± 0.67mS; What changed by second trip echo utilizes formula:
What finally illustrate is, above preferred embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although by above preferred embodiment to invention has been detailed description, but those skilled in the art are to be understood that, various change can be made to it in the form and details, and not depart from claims of the present invention limited range.
Claims (7)
1., based on a method for tera-hertz spectra commercial measurement graphene film conductance, it is characterized in that: comprise the following steps:
S1: regulate the terahertz time-domain spectroscopy system light path obtaining and be adapted to measure film;
S2: measure the terahertz time-domain spectroscopic signal obtaining base material;
S3: the terahertz time-domain spectroscopic signal of base material after measurement acquisition transfer graphene film;
S4: the signal gathered according to step S2 and S3, utilizes formulae discovery terahertz wave band Graphene conductance;
S5: set up standard relationship curve between the conductance obtained by terahertz light spectral technology and the conductance adopting traditional four-point probe methods to obtain, obtains association factor; According to association factor, obtain in visible light wave range Graphene conductance.
2. a kind of method based on tera-hertz spectra commercial measurement graphene film conductance according to claim 1, it is characterized in that: in step sl, described adjustment light path comprises the collimation of Terahertz measuring system light path, the determination of focus.
3. a kind of method based on tera-hertz spectra commercial measurement graphene film conductance according to claim 1, it is characterized in that: described step S2 and S3 carries out under room temperature environment, air is made dehumidification treatments or is not made dehumidification treatments; The terahertz time-domain spectroscopy signal obtained in described step S2 and S3 comprises multiecho pulse signal.
4. a kind of method based on tera-hertz spectra commercial measurement graphene film conductance according to claim 1, is characterized in that: in step s 2, and described base material requires to have good THz wave transmitance, includes but not limited to High Resistivity Si.
5. a kind of method based on tera-hertz spectra commercial measurement graphene film conductance according to claim 1, is characterized in that: in step s3, and after described transfer graphene film, base material comprises graphene film layer and adds substrate material layer.
6. a kind of method based on tera-hertz spectra commercial measurement graphene film conductance according to claim 1, is characterized in that: the formula in step S4 is derived based on fresnel formula and Tinkham film homology equation and obtained; The thin layer conductance computing formula of being derived by echo each on terahertz time-domain spectroscopy has difference, as follows according to the first echo derivation formula:
Wherein n
a=n
si+ 1, n
si=3.42, n
sirepresent the refractive index of silicon; Z
0=377 Ω are the vacuum electric impedance of silicon;
represent the transport function of film, E
out, 1, G(ω) and E
out, 1, Si(ω) the THz wave energy intensity value with obtaining at the graphene-based end and the time domain wave spectrum Fourier transform without an echo acquisition of graphene-based bottom part is represented respectively;
As follows by the second echo derivation formula:
Wherein n
a=n
si+ 1, n
b=n
si-1, n
si=3.42, Z
0=377 Ω,
e
out, 2, G(ω) and E
out, 2, Si(ω) represent respectively with the graphene-based end with without the THz wave energy intensity value obtained after the time domain wave spectrum Fourier transform obtained by second trip echo of graphene-based bottom part.
7. a kind of method based on tera-hertz spectra commercial measurement graphene film conductance according to claim 1, it is characterized in that: in step S5, association factor is by tera-hertz spectra technology law and four probe method repetitive measurement comparative analysis gained, the substrate that same material is formed and film, association factor only need be determined once, once acquisition association factor, this method only need comprise S1 ~ S4 tetra-steps.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106645014A (en) * | 2016-09-23 | 2017-05-10 | 上海理工大学 | Terahertz spectroscopy based material recognition method |
| CN107421915A (en) * | 2017-09-08 | 2017-12-01 | 中国工程物理研究院流体物理研究所 | A kind of living cells based on terahertz time-domain decay total reflection spectrum monitors experimental method in real time |
| CN109459589A (en) * | 2018-09-26 | 2019-03-12 | 东莞市凯融光学科技有限公司 | A method of measuring contour Fresnel structure product face type |
| CN109900963A (en) * | 2019-02-27 | 2019-06-18 | 深圳大学 | A kind of test method of thin-film electrode material conductivity |
| CN109900657A (en) * | 2019-02-27 | 2019-06-18 | 深圳大学 | A kind of method of testing film electrode material structure change |
| CN110426704A (en) * | 2019-08-20 | 2019-11-08 | 中国科学院重庆绿色智能技术研究院 | A kind of total variation fast imaging algorithm for thinned array |
| CN112229814A (en) * | 2019-07-15 | 2021-01-15 | 中国科学院福建物质结构研究所 | Terahertz spectrum measuring device, measuring method and application thereof |
| CN113340843A (en) * | 2021-05-31 | 2021-09-03 | 苏州锐心观远太赫兹科技有限公司 | Nondestructive detection method and detection system based on terahertz time-domain spectrum |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011108462A1 (en) * | 2010-03-01 | 2011-09-09 | 東京エレクトロン株式会社 | Property measurement device, property measurement method, thin-film substrate manufacturing system, and program |
| EP2642277A1 (en) * | 2012-03-21 | 2013-09-25 | Furukawa Co., Ltd. | Electrical resistance measurement apparatus and electrical resistance measurement method |
| CN103926213A (en) * | 2014-04-17 | 2014-07-16 | 中国计量学院 | Terahertz spectrum detection device and method for heat stability of solid protein |
| CN104458645A (en) * | 2014-12-05 | 2015-03-25 | 中国科学院上海微系统与信息技术研究所 | Method and system for realizing continuous terahertz spectrum detection |
-
2015
- 2015-11-30 CN CN201510855575.6A patent/CN105527243A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011108462A1 (en) * | 2010-03-01 | 2011-09-09 | 東京エレクトロン株式会社 | Property measurement device, property measurement method, thin-film substrate manufacturing system, and program |
| EP2642277A1 (en) * | 2012-03-21 | 2013-09-25 | Furukawa Co., Ltd. | Electrical resistance measurement apparatus and electrical resistance measurement method |
| CN103926213A (en) * | 2014-04-17 | 2014-07-16 | 中国计量学院 | Terahertz spectrum detection device and method for heat stability of solid protein |
| CN104458645A (en) * | 2014-12-05 | 2015-03-25 | 中国科学院上海微系统与信息技术研究所 | Method and system for realizing continuous terahertz spectrum detection |
Non-Patent Citations (3)
| Title |
|---|
| JONAS D. BURON,ET AL: "Electrically Continuous Graphene from Single Crystal Copper Verified by Terahertz Conductance Spectroscopy and Micro Four-Point Probe", 《NANO LETTERS》 * |
| JONAS D.BURON,ET AL: "Graphene Conductance Uniformity Mapping", 《NANO LETTERS》 * |
| 徐秀娟 等: "石墨烯研究进展", 《化学进展》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106645014A (en) * | 2016-09-23 | 2017-05-10 | 上海理工大学 | Terahertz spectroscopy based material recognition method |
| CN106645014B (en) * | 2016-09-23 | 2019-04-30 | 上海理工大学 | Substance identification based on tera-hertz spectra |
| CN107421915A (en) * | 2017-09-08 | 2017-12-01 | 中国工程物理研究院流体物理研究所 | A kind of living cells based on terahertz time-domain decay total reflection spectrum monitors experimental method in real time |
| CN109459589A (en) * | 2018-09-26 | 2019-03-12 | 东莞市凯融光学科技有限公司 | A method of measuring contour Fresnel structure product face type |
| CN109459589B (en) * | 2018-09-26 | 2020-04-17 | 东莞市凯融光学科技有限公司 | Method for measuring surface type of product with equal-height Fresnel structure |
| CN109900963A (en) * | 2019-02-27 | 2019-06-18 | 深圳大学 | A kind of test method of thin-film electrode material conductivity |
| CN109900657A (en) * | 2019-02-27 | 2019-06-18 | 深圳大学 | A kind of method of testing film electrode material structure change |
| CN112229814A (en) * | 2019-07-15 | 2021-01-15 | 中国科学院福建物质结构研究所 | Terahertz spectrum measuring device, measuring method and application thereof |
| CN112229814B (en) * | 2019-07-15 | 2021-11-05 | 中国科学院福建物质结构研究所 | Terahertz spectrum measuring device, measuring method and application thereof |
| CN110426704A (en) * | 2019-08-20 | 2019-11-08 | 中国科学院重庆绿色智能技术研究院 | A kind of total variation fast imaging algorithm for thinned array |
| CN110426704B (en) * | 2019-08-20 | 2023-03-24 | 中国科学院重庆绿色智能技术研究院 | Total variation fast imaging algorithm for sparse array |
| CN113340843A (en) * | 2021-05-31 | 2021-09-03 | 苏州锐心观远太赫兹科技有限公司 | Nondestructive detection method and detection system based on terahertz time-domain spectrum |
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