CN103033734A - Method for measuring graphene carrier mobility based on non-contact Hall effect - Google Patents
Method for measuring graphene carrier mobility based on non-contact Hall effect Download PDFInfo
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- CN103033734A CN103033734A CN2012105939271A CN201210593927A CN103033734A CN 103033734 A CN103033734 A CN 103033734A CN 2012105939271 A CN2012105939271 A CN 2012105939271A CN 201210593927 A CN201210593927 A CN 201210593927A CN 103033734 A CN103033734 A CN 103033734A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 114
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 40
- 230000005355 Hall effect Effects 0.000 title claims abstract description 14
- 230000037230 mobility Effects 0.000 claims abstract description 70
- 238000005259 measurement Methods 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- 229910052802 copper Inorganic materials 0.000 claims description 25
- 238000012360 testing method Methods 0.000 claims description 19
- 230000006698 induction Effects 0.000 claims description 14
- 230000005284 excitation Effects 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 3
- 239000000523 sample Substances 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 13
- 230000004447 accommodation reflex Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Abstract
The invention belongs to the technical field of semiconductors, and provides a method for measuring graphene carrier mobility based on a non-contact Hall effect. Induced current and Hall current are guided in graphene by adopting an incident electromagnetic wave exciting mode; electromagnetic wave radiated by the Hall current is measured, and is compared with incident electromagnetic wave to obtain the mobility of the graphene; the projection position of excited electromagnetic wave is changed to implement multi-point measurement; and the mobilities of the graphene in different positions are compared to obtain whether the graphene has excellent consistence. The method adopts the non-contact electromagnetic wave to measure the graphene mobility, so that the time spent in measuring the graphene mobility is saved, the influence on properties of the graphene from the traditional method for producing metal probes is avoided, and whether a large amount of prepared graphene has excellent consistence can be judged; and the method has strong practicability and stronger promotion and application benefits.
Description
Technical field
The invention belongs to technical field of semiconductors, relate in particular to the method for measuring the Graphene carrier mobility based on contactless Hall effect.
Background technology
Grapheme material is a kind of carbon back two dimensional crystal, is present known the thinnest the lightest material, and individual layer is atomic thickness only, and it has extremely excellent physicochemical property, and (theoretical estimation surpasses 200000cm such as high carrier mobility
2V
-1s
-1, be hundreds of times of Si), superpower mechanical property (the about 1000GP of Young modulus), high specific surface area and fabulous gas-sensitive property, the high transparency and pliability, and also there are not mismatch problems in it and substrate, can be fully compatible with Si base device technique, have outstanding industrial advantage.Therefore, Graphene appear as industrial community and scientific and technological circle bring dawn, it is the new material that the alternative Si that is expected most becomes base semiconductor material of future generation.
In order to improve the consistance of Graphene preparation, usually after finishing, preparation needs the mobility of Graphene is tested, conventional vanderburg method principle is simple, it is little to be applicable in theory measure arbitrary shape sample (requiring material is approximate two-dimensional material, and namely thickness is much smaller than length width) measuring error.But owing to need to make Ohmic contact, metal solder joint, so that grapheme material is broken ring, be difficult to carry out other tests.And because single-layer graphene thickness is too thin, the doped graphene preparation is difficult to obtain good consistance, grapheme material is larger with the work function difference between metal material, be not easy to make good Ohmic contact, add the Graphene top electrode make expensive so that vanderburg method and be not suitable for characterizing Graphene.So, in order to characterize efficiently Graphene, judge that whether a large amount of preparation Graphenes have good consistance, have proposed the employing eyes with non-contact method and have measured mobility.
Summary of the invention
The invention provides the method for measuring the Graphene carrier mobility based on contactless Hall effect, be intended to solve the method for the test Graphene mobility that prior art provides, make grapheme material be broken ring, be difficult to carry out other tests, testing cost is higher simultaneously, the problem of complicated operation.
The object of the present invention is to provide the method for measuring the Graphene carrier mobility based on contactless Hall effect, the mode that the method adopts incident electromagnetic wave to excite, in Graphene, introduce induction current and Hall current, the electromagnetic wave that gives off by measuring Hall current, and compare with incident electromagnetic wave, draw the mobility of Graphene, change excites electromagnetic launching position again, carries out multimetering.
Further, the specific implementation step of the method is as follows:
Step 2 is placed on the Graphene of transferring on the substrate on the objective table, selects built-in response test substrate;
Step 3 applies inversion signal to the balance bridge circuit, and the manual adjustments detector makes the Hall value that detects reach minimum;
Step 4, under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be for the measurement of mobility;
Step 5 keeps magnetic induction density at 5000-10000G, measures the Hall energy of Graphene Hall excitation current radiation, and calculates thus the Graphene mobility;
Step 6, moving substrate is measured other position Graphene mobilities.
Further, in step 1, the copper coin sheet resistance value of being measured by reflected energy is not more than 10ohms.
Further, in step 2, use substrate must be not less than 2 inches.
Further, in step 6, by comparing diverse location Graphene mobility, can obtain Graphene and whether have good consistance.
The method of measuring the Graphene carrier mobility based on contactless Hall effect provided by the invention, the mode that adopts incident electromagnetic wave to excite, in Graphene, introduce induction current and Hall current, the electromagnetic wave that gives off by measuring Hall current, and compare with incident electromagnetic wave, draw the mobility of Graphene, change again and excite electromagnetic launching position, carry out multimetering, and by comparing diverse location Graphene mobility, can obtain Graphene and whether have good consistance, the method adopts contactless electromagnetic wave measurement Graphene mobility, has saved the time of measuring the Graphene mobility, avoided classic method to make metal probe to the impact of Graphene character, can judge whether a large amount of preparation Graphenes have good consistance, practical, have stronger propagation and employment and be worth.
Description of drawings
Fig. 1 be the embodiment of the invention provide measure the realization flow figure of the method for Graphene carrier mobility based on contactless Hall effect;
Fig. 2 be the embodiment of the invention provide measure the principle schematic of the method for Graphene carrier mobility based on contactless Hall effect.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further described in detail.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in and limit invention.
The object of the present invention is to provide the method for measuring the Graphene carrier mobility based on contactless Hall effect, the mode that the method adopts incident electromagnetic wave to excite, in Graphene, introduce induction current and Hall current, the electromagnetic wave that gives off by measuring Hall current, and compare with incident electromagnetic wave, draw the mobility of Graphene, change excites electromagnetic launching position again, carries out multimetering.
What Fig. 1 showed that the embodiment of the invention provides measures the realization flow of the method for Graphene carrier mobility based on contactless Hall effect.
As shown in Figure 1, in embodiments of the present invention, the specific implementation step of the method is as follows:
Step 2 is placed on the Graphene of transferring on the substrate on the objective table, selects built-in response test substrate;
Step 3 applies inversion signal to the balance bridge circuit, and the manual adjustments detector makes the Hall value that detects reach minimum;
Step 4, under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be for the measurement of mobility;
Step 5 keeps magnetic induction density at 5000-10000G, measures the Hall energy of Graphene Hall excitation current radiation, and calculates thus the Graphene mobility;
Step 6, moving substrate is measured other position Graphene mobilities.
In embodiments of the present invention, in step 1, the copper coin sheet resistance value of being measured by reflected energy is not more than 10ohms.
In embodiments of the present invention, in step 2, use substrate must be not less than 2 inches.
In embodiments of the present invention, in step 6, by comparing diverse location Graphene mobility, can obtain Graphene and whether have good consistance.
Below in conjunction with drawings and the specific embodiments application principle of the present invention is further described.
The object of the invention is to overcome the deficiency of contact type measurement, a kind of contactless mobility measuring method based on electromagnetic wave excites is provided, can exempt probe, measure easily the Graphene mobility.The other advantage of its multimetering can be used for characterizing the homogeneity of Graphene.
Realize that the object of the invention key problem in technology is: the mode that adopts incident electromagnetic wave to excite, in Graphene, introduce induction current and Hall current, the electromagnetic wave that gives off by measuring Hall current, and compare with incident electromagnetic wave, draw the mobility of Graphene.Change excites electromagnetic launching position, carries out multimetering.Implementation step comprises as follows:
(1) the copper coin sheet is placed on the objective table, aims at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, adjusts device parameter with this, the energy hunting that may occur in the compensating test process.The copper coin sheet resistance value of being measured by reflected energy is not more than 10ohms;
(2) Graphene of transferring on the substrate is placed on the objective table, selects the built-in corresponding test substrate of software, use substrate must be not less than 2 inches;
(3) system applies inversion signal to the balance bridge circuit, and the manual adjustments detector makes the Hall value that detects reach minimum, offsets as much as possible noise;
(4) under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be for the measurement of mobility;
(5) keep magnetic induction density at 5000-10000G, measure the Hall energy of Graphene Hall excitation current radiation, calculate thus the Graphene mobility;
(6) moving substrate is measured other position Graphene mobilities, and whether diverse location relatively obtains material even.
Measuring the Graphene mobility with said method is characterized in that: the measurement of mobility does not need to use the metal probe contact, is convenient for measuring the mobility of material diverse location.
The present invention has following advantage:
1. owing to adopt contactless electromagnetic wave measurement Graphene mobility, save probe manufacturing, avoided material damage.
2. owing to adopt contactless electromagnetic wave measurement Graphene mobility, can measure easily the mobility of diverse location, characterize Graphene and prepare homogeneity.
With reference to Fig. 1, the present invention provides following embodiment:
Embodiment 1:
Performing step of the present invention is as follows:
The copper coin sheet is placed on the objective table, aims at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, and the copper coin sheet resistance value of being measured by reflected energy is not more than 10ohms.
Step 2, accommodation reflex Hall value.
Graphene is transferred on 4 inches Si substrates, be placed on the objective table, aim at electromagnetic wave transmitter, adjust reflection Hall value to minimum.
Step 3 is measured Graphene surface resistance and carrier concentration.
Under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration.
Step 4 is measured the Graphene mobility.
Keep magnetic induction density at 5000G, measure the Hall energy of Graphene Hall excitation current radiation, system calculates the Graphene mobility automatically.
Step 5, moving substrate is measured other position mobilities.
Embodiment 2:
Performing step of the present invention is as follows:
Steps A utilizes the copper coin sheet to adjust device parameter.
The copper coin sheet is placed on the objective table, aims at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, and the copper coin sheet resistance value of being measured by reflected energy is not more than 10ohms.
Step B, accommodation reflex Hall value.
Graphene is transferred to 3 inches SiO
2On the substrate, be placed on the objective table, aim at electromagnetic wave transmitter, adjust reflection Hall value to minimum.
Step C measures Graphene surface resistance and carrier concentration.
Under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration.
Step D measures the Graphene mobility.
Keep magnetic induction density at 7000G, measure the Hall energy of Graphene Hall excitation current radiation, system calculates the Graphene mobility automatically.
Step e, moving substrate is measured other position mobilities.
Embodiment 3:
Performing step of the present invention is as follows:
The copper coin sheet is placed on the objective table, aims at electromagnetic wave transmitter, testing apparatus reads the reflected energy of copper sheet automatically, and the copper coin sheet resistance value of being measured by reflected energy is not more than 10ohms.
Step 2, accommodation reflex Hall value.
Graphene is transferred on 2 inches GaN substrates, be placed on the objective table, aim at electromagnetic wave transmitter, adjust reflection Hall value to minimum.
Step 3 is measured Graphene surface resistance and carrier concentration.
Under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration.
Step 4 is measured the Graphene mobility.
Keep magnetic induction density at 10000G, measure the Hall energy of Graphene Hall excitation current radiation, system calculates the Graphene mobility automatically.
Step 5, moving substrate is measured other position mobilities.
The invention discloses a kind of Graphene carrier mobility measuring method based on contactless Hall effect, mainly solve the problem of non-cpntact measurement Graphene mobility.Its measuring process is: (1) is placed on the Cu disk on the objective table, aims at electromagnetic wave transmitter, and testing apparatus reads the reflected energy of copper sheet automatically, adjusts device parameter with this, the energy hunting that may occur in the compensating test process.The Cu disk resistance value of being measured by reflected energy is not more than 10ohms; (2) Graphene of transferring on the substrate is placed on the objective table, selects the built-in corresponding test substrate of software, use substrate must be not less than 2 inches; (3) system applies inversion signal to the balance bridge circuit, and the manual adjustments detector makes the Hall value that detects reach minimum, offsets as much as possible noise; (4) under 0 magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be for the measurement of mobility; (5) keep magnetic induction density at 100-1000G, measure the Hall energy of Graphene Hall excitation current radiation, calculate thus the Graphene mobility; (6) moving substrate is measured other position Graphene mobilities, and whether diverse location relatively obtains material even.The present invention has saved the time of measuring the Graphene mobility, has avoided making metal probe to the impact of Graphene character.
The method based on contactless Hall effect measurement Graphene carrier mobility that the embodiment of the invention provides, the mode that adopts incident electromagnetic wave to excite, in Graphene, introduce induction current and Hall current, the electromagnetic wave that gives off by measuring Hall current, and compare with incident electromagnetic wave, draw the mobility of Graphene, change again and excite electromagnetic launching position, carry out multimetering, and by comparing diverse location Graphene mobility, can obtain Graphene and whether have good consistance, the method adopts contactless electromagnetic wave measurement Graphene mobility, has saved the time of measuring the Graphene mobility, avoided classic method to make metal probe to the impact of Graphene character, can judge whether a large amount of preparation Graphenes have good consistance, practical, have stronger propagation and employment and be worth.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. measure the method for Graphene carrier mobility based on contactless Hall effect, it is characterized in that, the mode that the method adopts incident electromagnetic wave to excite, in Graphene, introduce induction current and Hall current, the electromagnetic wave that gives off by measuring Hall current, and compare with incident electromagnetic wave, draw the mobility of Graphene, change excites electromagnetic launching position again, carries out multimetering.
2. the method for claim 1 is characterized in that, the specific implementation step of the method is as follows:
Step 1 is placed on the copper coin sheet on the objective table, aims at electromagnetic wave transmitter, utilizes testing apparatus automatically to read the reflected energy of copper sheet, and the reflected energy that obtains is adjusted device parameter;
Step 2 is placed on the Graphene of transferring on the substrate on the objective table, selects built-in response test substrate;
Step 3 applies inversion signal to the balance bridge circuit, and the manual adjustments detector makes the Hall value that detects reach minimum;
Step 4, under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be for the measurement of mobility;
Step 5 keeps magnetic induction density at 5000-10000G, measures the Hall energy of Graphene Hall excitation current radiation, and calculates thus the Graphene mobility;
Step 6, moving substrate is measured other position Graphene mobilities.
3. method as claimed in claim 2 is characterized in that, in step 1, the copper coin sheet resistance value of being measured by reflected energy is not more than 10ohms.
4. method as claimed in claim 2 is characterized in that, in step 2, uses substrate must be not less than 2 inches.
5. method as claimed in claim 2 is characterized in that, in step 6, by comparing diverse location Graphene mobility, can obtain Graphene and whether have good consistance.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107037284A (en) * | 2017-03-29 | 2017-08-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | The method for measuring the graphene microcell mobility using semiconductor as substrate |
| WO2020208443A1 (en) * | 2019-04-12 | 2020-10-15 | International Business Machines Corporation | Carrier-resolved photo-hall system and method |
| CN111983532A (en) * | 2020-07-30 | 2020-11-24 | 南昌工程学院 | Electromagnetic testing system and testing device for graphene device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59178739A (en) * | 1983-03-30 | 1984-10-11 | Hitachi Ltd | Device for measuring carrier mobility |
| SU1465750A1 (en) * | 1987-05-27 | 1989-03-15 | Войсковая часть 67947 | Method of measuring concentration and mobility of current carriers in semiconductors |
| CN1531656A (en) * | 2001-05-03 | 2004-09-22 | �պ��ٵ��ӹ�˾ | Method and apapratus for nondestructive measurement and mapping of sheet materials |
| CN1971295A (en) * | 2005-11-21 | 2007-05-30 | 杨瑞霞 | A novel method for measuring current carrier mobility of magnetic semiconductor |
| CN101740434A (en) * | 2008-11-21 | 2010-06-16 | 索尼株式会社 | Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer |
| CN102313835A (en) * | 2011-07-21 | 2012-01-11 | 河北工业大学 | Method for measuring electric parameter of gallium arsenide pseudomorphic HEMT (high electron mobility transistor) material |
-
2012
- 2012-12-31 CN CN201210593927.1A patent/CN103033734B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59178739A (en) * | 1983-03-30 | 1984-10-11 | Hitachi Ltd | Device for measuring carrier mobility |
| SU1465750A1 (en) * | 1987-05-27 | 1989-03-15 | Войсковая часть 67947 | Method of measuring concentration and mobility of current carriers in semiconductors |
| CN1531656A (en) * | 2001-05-03 | 2004-09-22 | �պ��ٵ��ӹ�˾ | Method and apapratus for nondestructive measurement and mapping of sheet materials |
| CN1971295A (en) * | 2005-11-21 | 2007-05-30 | 杨瑞霞 | A novel method for measuring current carrier mobility of magnetic semiconductor |
| CN101740434A (en) * | 2008-11-21 | 2010-06-16 | 索尼株式会社 | Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer |
| CN102313835A (en) * | 2011-07-21 | 2012-01-11 | 河北工业大学 | Method for measuring electric parameter of gallium arsenide pseudomorphic HEMT (high electron mobility transistor) material |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107037284A (en) * | 2017-03-29 | 2017-08-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | The method for measuring the graphene microcell mobility using semiconductor as substrate |
| CN107037284B (en) * | 2017-03-29 | 2019-04-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Measurement is using semiconductor as the method for the graphene microcell mobility of substrate |
| WO2020208443A1 (en) * | 2019-04-12 | 2020-10-15 | International Business Machines Corporation | Carrier-resolved photo-hall system and method |
| US11041827B2 (en) | 2019-04-12 | 2021-06-22 | International Business Machines Corporation | Carrier-resolved photo-hall system and method |
| CN113678011A (en) * | 2019-04-12 | 2021-11-19 | 国际商业机器公司 | photo-Hall system and method capable of resolving carriers |
| GB2596770A (en) * | 2019-04-12 | 2022-01-05 | Ibm | Carrier-resolved photo-hall system and method |
| GB2596770B (en) * | 2019-04-12 | 2022-05-25 | Ibm | Carrier-resolved photo-hall system and method |
| US11486857B2 (en) | 2019-04-12 | 2022-11-01 | International Business Machines Corporation | Carrier-resolved photo-hall system and method |
| CN111983532A (en) * | 2020-07-30 | 2020-11-24 | 南昌工程学院 | Electromagnetic testing system and testing device for graphene device |
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