CN103023454A - Array structure micro electromechanical resonator made of piezoelectric materials - Google Patents
Array structure micro electromechanical resonator made of piezoelectric materials Download PDFInfo
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- CN103023454A CN103023454A CN2012105399466A CN201210539946A CN103023454A CN 103023454 A CN103023454 A CN 103023454A CN 2012105399466 A CN2012105399466 A CN 2012105399466A CN 201210539946 A CN201210539946 A CN 201210539946A CN 103023454 A CN103023454 A CN 103023454A
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Abstract
An array structure micro electromechanical resonator made of piezoelectric materials comprises an excitation panel resonator, an output panel resonator, a plurality of energy-storage panel resonators, an input electrode couple, an output electrode couple, a support anchor point couple and a substrate. The plurality of energy-storage panel resonators are overlapped in a diamond matrix and are directly connected and contacted through corners, two uppermost energy-storage panel resonators are directly contacted and connected with excitation panel resonator through the corners, and two lowermost energy-storage panel resonators are directly contacted and connected with the output panel resonator through the sides and the angles. The input electrode couple covers the upper surface and the lower surface of the excitation panel resonator, and the output electrode couple covers the upper surface and the lower surface of the output panel resonator. The support anchor point couple is respectively connected with outer corners of the excitation panel resonator and the output panel resonator and support the excitation panel resonator, the output panel resonator, the plurality of energy-storage panel resonators, the input electrode couple and the output electrode couple which are in suspension mode. The support anchor point couple is fixed on the substrate.
Description
Technical field
The invention belongs to microelectronics technology, particularly a kind of micro-electro-mechanical resonator that adopts the array structure of piezoelectric preparation.
Background technology
Existing micro electronmechanical (MEMS) resonator mainly is divided into two kinds of condenser type and piezoelectric types from the signal transfer mode.Wherein the capacitive MEMS resonator adopts the larger material of Young's modulus as resonance structure, by anchor point unsettled resonance structure is fixed on the substrate, direction of vibration at resonance structure arranges plate electrode, intermittence between plate electrode and the resonance structure is very little, usually only have tens nm, electrostatic force loads again can encourage the resonance structure vibration on the plate electrode, the resonance structure of vibration also can cause the gap length between itself and the plate electrode to change, cause the change of capacity plate antenna value, thereby the form of resonance signal with electricity passed.Its advantage is that the mechanical material of resonance is fully unsettled, and only the part of stress and strain minimum is fixed on the substrate by anchor point, and energy loss is minimum, has high quality factor (Q value).But adopt air gap electric capacity to carry out the energy transfer mode of motor mechanical-electric coupling, its mechanical-electric coupling efficient depends on the size of air gap, only has the air gap less than 20nm, could realize lower insertion loss, but the air gap that existing technique can realize is in the air gap that is difficult to realize 20nm.Energy transfer efficiency is a key factor of restriction capacitive micro-electromechanical resonator.In addition, the size inverse correlation of the resonance frequency of capacitance type resonator and resonance structure, resonance frequency is higher, and physical dimension is less.Less size not only causes the increase of technology difficulty, the putting of capacity plate antenna, and the input of signal also faces great difficulty with detecting.So the operating frequency of capacitance type resonator is difficult to break through GHz, even reached more than the GHz in the resonance frequency of high-order, its equiva lent impedance is also very large, is difficult to carry out commerce as effective resonator and uses.
The piezoelectric type micro-electro-mechanical resonator directly is deposited on the piezoelectric resonator material surface with the drive electrode metal, can realize larger electromechanical energy transmission, has benefited from the stronger mechanical-electric coupling ability of piezoelectric, can reduce insertion loss, reduces motional impedance.If adopt piezoelectric such as AlN, quartz, ZnO, PZT etc., utilize its piezoelectric property can improve output signal strength, and the operating frequency of piezoelectric type MEMS resonator can reach several GHz.Find by investigation, in the inorganic non-ferroelectricity piezoelectric of all applicable microelectronic processing technologys, the surface acoustic wave speed of AlN film is the highest, it almost is 2 times that surface acoustic wave device is commonly used piezoelectric membrane ZnO and CdS, therefore, it is fit to make required GHz resonance and the filtering device of current communications industry development very much.
It seems at present, the AlN MEMS of body compact model is the quite promising research direction in this field, its resonance frequency is determined by the face inside dimension, as long as the domain by the design different size, just can develop the resonating device of different frequency, therefore can realize multifrequency piezo-electric resonator array at same substrate, for the one chip wireless communication system lays the foundation.Compare with the capacitance type resonator part that adopts the preparation of other semi-conducting materials such as polysilicon or carbofrax material, piezoelectric possesses larger electromechanical coupling factor, energy loss is little, can obtain higher frequency, higher Q value and lower motional impedance, can be low to moderate the motional impedance of hundreds of ohm or even tens ohm, be easier to realize impedance matching with the RF system of 50 Ω characteristic impedances, increased its practical possibility.But the result from report, the resonance frequency of this structure is still determined by the longitudinal size of piezoelectric membrane and comb electrodes and electrode spacing, high-frequency element need to be used submicron lithography technology or e-book exposure technology, the broach figure is complicated, technology difficulty is larger, rate of finished products is low, therefore needs the new device architecture of exploitation.
With respect to comb structure, the full symmetrical configuration of rule possesses higher resonance frequency under identical area, emulation shows, the square AlN thin-film material of length of side 5um longitudinally the single order resonance frequency up to 1.2GHz, and wish realizes the comb structure AlN thin-film material of identical resonance frequency, its comb tooth spacing is less than 2.5um, and difficulty is larger on technique realizes.
Traditional piezoelectric resonator, its surface needs the covering metal electrode, is used for encouraging or input, the metal electrode material on the vibrational structure, its coefficient of elasticity is little, and intrinsic damp is large, has had a strong impact on the quality factor of resonance structure.And capacitance type resonator, the input of signal and to spread out of be by capacity plate antenna, electrode and resonance structure do not have direct Mechanical Contact, the stored energy of the resonance structure that can not dissipate, therefore capacitance type resonator has very high quality factor, also is study hotspot in the last few years.But capacitance type resonator is subject to the motor conversion efficiency, can't realize lower input impedance, needs casacade multi-amplifier to satisfy the amplitude condition by its oscillator circuit that consists of, and has consumed very large energy.The piezoelectric resonator of array structure, only need at input and output resonant element surface deposition metal, and other resonant element is not subjected to the restriction of metal electrode energy dissipation, when energy storage resonant element quantity is far longer than the input and output resonant element, the quality factor of its whole resonating device approximate without anchor point constraint with without the quality factor of the single resonant element of metal deposit, can realize being equal to the quality factor of capacitance type resonator, and piezoelectric is as the input/output port of resonator, and the piezo-electric resonator of this array structure can be realized lower equiva lent impedance again.Therefore, near the frequency range of GHz, the array piezo-electric resonator has preferably performance, can widely apply in consumer electronics market.
Summary of the invention
The object of the invention is to, a kind of MEMS resonator structure that adopts the array structure of piezoelectric preparation is provided, its resonance frequency can reach more than the GHZ, possesses the equiva lent impedance less than 1000 Ω, is the New Resonance device that has the market competitiveness.
The invention provides a kind of array microelectromechanicresonator resonator structure that adopts the piezoelectric preparation, comprising:
The dull and stereotyped resonator of one excitation;
The dull and stereotyped resonator of one output;
The dull and stereotyped resonator of a plurality of energy storage, the dull and stereotyped resonator of these a plurality of energy storage is that the rhombus matrix form is stacked, it is directly to contact with each other connection by the corner, wherein the dull and stereotyped resonator of uppermost two energy storage directly contacts by the corner with the dull and stereotyped resonator of excitation and is connected, and the dull and stereotyped resonator of nethermost two energy storage directly contacts by the corner with the dull and stereotyped resonator of output and is connected;
One input electrode pair, this input electrode is to covering the dull and stereotyped resonator upper and lower surface of excitation;
One output electrode pair, this output electrode is to covering the dull and stereotyped resonator upper and lower surface of output;
One supports anchor point pair, this support anchor point is to being connected with the outer corners of the dull and stereotyped resonator of excitation with the dull and stereotyped resonator of output respectively, this support anchor point to will encourage the dull and stereotyped resonator of dull and stereotyped resonator, output, the dull and stereotyped resonator of a plurality of energy storage, input electrode to output electrode to supporting, be hanging shape;
One substrate, described support anchor point is to being fixed on this substrate.
Description of drawings
For further specifying technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the array junctions composition of first embodiment of the invention;
Fig. 2 is the array junctions composition of second embodiment of the invention;
Fig. 3 produces the schematic diagram of strain when being the array structure resonance of the first embodiment shown in Figure 1.
Embodiment
See also shown in Figure 1ly, the invention provides a kind of MEMS resonator that adopts the array structure of piezoelectric preparation, comprising:
One the excitation dull and stereotyped resonator 11, this encourages dull and stereotyped resonator 11 upper and lower surface covering metal electrodes, for input electrode to 3;
One output dull and stereotyped resonator 13, this exports dull and stereotyped resonator 11 upper and lower surface covering metal electrodes, for output electrode to 4;
The dull and stereotyped resonator 12 of a plurality of energy storage, the dull and stereotyped resonators 12 of these a plurality of energy storage with encourage dull and stereotyped resonator 11 and be connected dull and stereotyped resonator 13 and directly contact by the corner and be connected, form the rhombus matrix type structure, the size of this rhombus matrix array structure can be according to the Demand Design to the resonator quality factor, quality factor require larger, also just need larger array;
One supports anchor point to 2, and this support anchor point is connected with the outside of the dull and stereotyped resonator 11 of excitation with the dull and stereotyped resonator 13 of output respectively to 2;
One substrate 5, this substrate 5 with support anchor point and be connected to 2, the fixed support anchor point makes the dull and stereotyped resonators 12 of a plurality of energy storage, the dull and stereotyped resonator 11 of excitation to 2 and exports the rhombus matrix array structure that dull and stereotyped resonator 13 forms unsettled.
Array structure micro-electro-mechanical resonator energisation mode of the present invention is sinusoidal signal excitation, in the AC signal of input electrode to 3 loadings one and resonator resonance frequency same frequency, the dull and stereotyped resonator 11 of the excitation of piezoelectric preparation is under the effect of electrostatic force, produce strain, its thickness generating period variation, vibrational energy with the form of surface acoustic wave to outdiffusion.Part vibrational energy stimulated the menstrual flow and was attached thereto the support anchor point that connects to 2, dissipated at substrate 5; Part energy is delivered to the formation input electrode of its upper and lower surface covering on 3 the metal, becomes thermal energy consumption and dissipates; Quite a few energy is delivered on the dull and stereotyped resonator 12 of the energy storage that is adjacent in addition, and be delivered to other resonant elements, encourage dull and stereotyped resonator 13 vibrations of the dull and stereotyped resonator 12 of a plurality of energy storage and output, vibration makes the dull and stereotyped resonator 11 of excitation, the dull and stereotyped resonator 12 of a plurality of energy storage and exports dull and stereotyped resonator 13 artificial body for generating strains, and the distortion schematic diagram as shown in Figure 3.
The dull and stereotyped resonator 13 of the output of forced vibration, because the character of its piezoelectric determined when its volume generation strain, can stored charge in upper and lower surface, the formation electrical potential difference.This electrical potential difference passes with the electricity form 4 by output electrode.During resonance, the portion of energy of exporting 13 storages of dull and stereotyped resonator also by output electrode to 4, support anchor point to 2 and the dull and stereotyped resonator 12 of energy storage dissipate.
The dull and stereotyped resonator 12 of a plurality of energy storage is main energy storage units of array MEMS resonator.The energy of its storage mainly outwards dissipates by adjacent resonant element, and be not subject to the impact of anchor point and upper and lower surface metal, in the harmonic period, the maximum potential of its storage is very high with the ratio of the gross energy of dissipation, under the resonance frequency of GHz, the ratio of this stored energy and dissipation energy can up to several thousand to several ten thousand, that is to say that the device quality factor can reach several thousand even several ten thousand.
The dull and stereotyped resonators 12 of a plurality of energy storage, the dull and stereotyped resonator 11 of excitation and export the resonant element that dull and stereotyped resonator 13 is equivalent to connect, the inverse of the quality factor that it is total equal each resonant element quality factor inverse and.Wherein the dull and stereotyped resonator 12 of a plurality of energy storage has higher quality factor, encourage the quality factor of dull and stereotyped resonator 11 and the dull and stereotyped resonator 13 of output lower, when the quantity of the resonant element of the dull and stereotyped resonator 12 of energy storage when encouraging the resonant element quantity of dull and stereotyped resonator 11 and the dull and stereotyped resonator 13 of output, the quality factor of whole array resonator are approximately equal to an array subelement several times of single resonant element quality factor in the dull and stereotyped resonators 12 of a plurality of energy storage.
The resonance structure of array MEMS resonator of the present invention directly contacts connection by a plurality of identical sub-resonant elements by the corner, and the form of forming array forms.Sub-resonant element can adopt the holohedral symmetry resonance structure, such as circle, square, hexagon etc., different sub-resonant element shapes has determined the spread pattern of array, Fig. 1 is the resonance structure of the array MEMS resonator of a square subelement formation, and Fig. 2 is the resonance structure of the array MEMS resonator of a circular subelement formation.The size of the array that consists of has determined array MEMS resonator quality factor, for one 2 MEMS array resonator that multiply by 2 structures, it is inputted dull and stereotyped resonator 11 and has a harmonic oscillator unit, export dull and stereotyped resonator 13 and have a harmonic oscillator unit, the dull and stereotyped resonator 12 of a plurality of energy storage has two resonant elements, the quality factor of the dull and stereotyped resonator 11 of hypothesis input here and the dull and stereotyped resonator 13 of output are Q1, the quality factor of the dull and stereotyped resonator 12 of single energy storage are Q2, and the quality factor of so total array resonators are 2Q1Q2/ (Q1+Q2); For one 3 MEMS array resonator that multiply by 3 structures, it is inputted dull and stereotyped resonator 11 and has a harmonic oscillator unit, export dull and stereotyped resonator 13 and have a harmonic oscillator unit, the dull and stereotyped resonator 12 of a plurality of energy storage has seven resonant elements, and the quality factor of so total array resonators are 9Q1Q2/ (7Q1+2Q2); Multiply by the MEMS array resonator of n structure for a n, it is inputted dull and stereotyped resonator 11 and has a harmonic oscillator unit, exports dull and stereotyped resonator 13 and has a harmonic oscillator unit, and the dull and stereotyped resonator 12 of energy storage has n
2-2 resonant elements, the quality factor of so total array resonators are about n
2Q2, the quality factor of whole array resonators have improved about n
2Doubly.
The preparation material that the resonance structure of array MEMS resonator of the present invention adopts is piezoelectric, this kind material can produce strain under electrical stimuli, also can be when mechanical oscillation cause strain, at surperficial stored charge, form electrical potential difference, possess lower equiva lent impedance.Piezoelectric can adopt multiple material, such as AlN, quartz, ZnO, PZT etc.
The material requirements of the substrate 5 that the present invention adopts has higher Young's modulus, so that the energy that is delivered to anchor point from resonance structure can major part be reflected, thereby reduces dissipation of energy, improves its quality factor of whole array MEMS resonance.
The above; only be embodiments of the invention; be not that the present invention is done any pro forma restriction; every any simple modification, equivalent variations and modification of above embodiment being done according to the technology of the present invention essence; all still belong within the technical solution of the present invention scope, so protection scope of the present invention is when being as the criterion with claims.
Claims (8)
1. array microelectromechanicresonator resonator structure that adopts piezoelectric preparation comprises:
The dull and stereotyped resonator of one excitation;
The dull and stereotyped resonator of one output;
The dull and stereotyped resonator of a plurality of energy storage, the dull and stereotyped resonator of these a plurality of energy storage is that the rhombus matrix form is stacked, it is directly to contact with each other connection by the corner, wherein the dull and stereotyped resonator of uppermost two energy storage directly contacts by the corner with the dull and stereotyped resonator of excitation and is connected, and the dull and stereotyped resonator of nethermost two energy storage directly contacts by the corner with the dull and stereotyped resonator of output and is connected;
One input electrode pair, this input electrode is to covering the dull and stereotyped resonator upper and lower surface of excitation;
One output electrode pair, this output electrode is to covering the dull and stereotyped resonator upper and lower surface of output;
One supports anchor point pair, this support anchor point is to being connected with the outer corners of the dull and stereotyped resonator of excitation with the dull and stereotyped resonator of output respectively, this support anchor point to will encourage the dull and stereotyped resonator of dull and stereotyped resonator, output, the dull and stereotyped resonator of a plurality of energy storage, input electrode to output electrode to supporting, be hanging shape;
One substrate, described support anchor point is to being fixed on this substrate.
2. the array microelectromechanicresonator resonator structure of employing piezoelectric according to claim 1 preparation, the quantity of the dull and stereotyped resonators of wherein said a plurality of energy storage is greater than 7.
3. the array microelectromechanicresonator resonator structure of employing piezoelectric according to claim 1 preparation, the dull and stereotyped resonator of wherein said a plurality of energy storage is in full accord with the dull and stereotyped resonator of excitation and the dull and stereotyped resonator shape size of output, is circular or polygonal full symmetrical configuration.
4. the array MEMS resonator structure of employing piezoelectric according to claim 3 preparation, the dull and stereotyped resonator of wherein said energy storage and the dull and stereotyped resonator of excitation be connected contact area that dull and stereotyped resonator is connected less than 1/10 of single energy storage flat board resonator area.
5. the array MEMS resonator structure of employing piezoelectric according to claim 4 preparation, the dull and stereotyped resonator of wherein said a plurality of energy storage is piezoelectric with the material of the dull and stereotyped resonator of excitation and the dull and stereotyped resonator of output, and the equivalent input impedance of array micro-electro-mechanical resonator is less than 1000 Ω.
6. the array MEMS resonator structure of employing piezoelectric according to claim 1 preparation, wherein said support anchor point pair is identical with the material of the dull and stereotyped resonator of energy storage, the dull and stereotyped resonator of excitation and the dull and stereotyped resonator of output, adopts Young's modulus greater than the material preparation of 90Gpa.
7. the array MEMS resonator structure of employing piezoelectric according to claim 1 preparation, wherein said substrate adopts Young's modulus greater than the material preparation of 90Gpa, this substrate and input electrode to and output electrode between electric insulation.
8. the array MEMS resonator structure of employing piezoelectric according to claim 1 preparation, wherein said input electrode to the right material of output electrode be golden, aluminium or nickel billon, its thickness is less than 500nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108896654A (en) * | 2018-05-11 | 2018-11-27 | 电子科技大学 | Energy consumption fact measurement method based on piezoelectric sound wave resonant transducer |
| CN110024284A (en) * | 2016-12-22 | 2019-07-16 | 株式会社村田制作所 | Angle couples resonator array |
| CN113381723A (en) * | 2021-06-29 | 2021-09-10 | 南通大学 | Lamb wave resonator and preparation method thereof |
| WO2023059697A1 (en) * | 2021-10-05 | 2023-04-13 | Massachusetts Institute Of Technology | Composite multi-material electromechanical energy storage component for power conversion |
| US12009746B2 (en) | 2019-06-13 | 2024-06-11 | Massachusetts Institute Of Technology | DC-DC converter based on piezoelectric resonator |
| US12126324B2 (en) | 2022-05-06 | 2024-10-22 | Massachusetts Institute Of Technology | Piezoelectric resonators for power conversion |
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| US20060125576A1 (en) * | 2004-10-18 | 2006-06-15 | Ho Gavin K | Highly tunable low-impedance capacitive micromechanical resonators, oscillators, and processes relating thereto |
| CN101946410A (en) * | 2007-12-18 | 2011-01-12 | 罗伯特·博世有限公司 | Mems resonator array structure and method of operating and using same |
| US7999635B1 (en) * | 2008-07-29 | 2011-08-16 | Silicon Laboratories Inc. | Out-of plane MEMS resonator with static out-of-plane deflection |
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| JP2005081524A (en) * | 2003-09-11 | 2005-03-31 | Sony Corp | Micromachine |
| US20060125576A1 (en) * | 2004-10-18 | 2006-06-15 | Ho Gavin K | Highly tunable low-impedance capacitive micromechanical resonators, oscillators, and processes relating thereto |
| CN101946410A (en) * | 2007-12-18 | 2011-01-12 | 罗伯特·博世有限公司 | Mems resonator array structure and method of operating and using same |
| US7999635B1 (en) * | 2008-07-29 | 2011-08-16 | Silicon Laboratories Inc. | Out-of plane MEMS resonator with static out-of-plane deflection |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110024284A (en) * | 2016-12-22 | 2019-07-16 | 株式会社村田制作所 | Angle couples resonator array |
| CN110024284B (en) * | 2016-12-22 | 2024-03-29 | 株式会社村田制作所 | Angularly coupled resonator array |
| CN108896654A (en) * | 2018-05-11 | 2018-11-27 | 电子科技大学 | Energy consumption fact measurement method based on piezoelectric sound wave resonant transducer |
| CN108896654B (en) * | 2018-05-11 | 2021-01-26 | 电子科技大学 | Energy dissipation factor measuring method based on piezoelectric acoustic wave resonant sensor |
| US12009746B2 (en) | 2019-06-13 | 2024-06-11 | Massachusetts Institute Of Technology | DC-DC converter based on piezoelectric resonator |
| CN113381723A (en) * | 2021-06-29 | 2021-09-10 | 南通大学 | Lamb wave resonator and preparation method thereof |
| CN113381723B (en) * | 2021-06-29 | 2024-03-12 | 南通大学 | Lamb wave resonator and preparation method thereof |
| WO2023059697A1 (en) * | 2021-10-05 | 2023-04-13 | Massachusetts Institute Of Technology | Composite multi-material electromechanical energy storage component for power conversion |
| US12126324B2 (en) | 2022-05-06 | 2024-10-22 | Massachusetts Institute Of Technology | Piezoelectric resonators for power conversion |
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Application publication date: 20130403 |